Gas deposition apparatus substrate state recognition method, system and gas deposition apparatus

Abstract

The application provides a kind of vapor deposition equipment substrate state identification method, system and vapor deposition equipment, image of tray is shot when reaction cavity is at initial temperature and each node temperature, the image corresponding to each node temperature is compared with the image corresponding to initial temperature, obtains the noise data corresponding to each node temperature, in the process of processing substrate, in the process of reaction cavity heating, the image of substrate and tray is acquired when heating to any node temperature, after processing in combination with the noise data corresponding to this node temperature, the image after denoising is obtained, the image after denoising is more clear compared to original image, so as to improve the accuracy of substrate state identification.

Description

Technical Field

[0001] This invention relates to the field of image processing technology, and in particular to a method, system, and vapor deposition equipment for identifying the state of a substrate in a vapor deposition apparatus. Background Technology

[0002] In semiconductor chip manufacturing, numerous micro-fabrication processes are required. A common method is vapor deposition, which utilizes the vacuum reaction chamber principle to process semiconductor wafers. During the deposition process on the semiconductor substrate, close monitoring of the process is essential to ensure good control over the deposition results.

[0003] Typically, an imaging device is used to photograph the substrate inside the reaction chamber through an observation window to identify its condition and determine whether adjustments to the process are necessary. Therefore, obtaining clear internal images to accurately identify the substrate condition is crucial for improving the quality of thin film deposition.

[0004] However, the temperature inside the reaction chamber of a vapor deposition device can reach over 1000°C, even 1600°C. The noise generated by this high-temperature environment can cause blurry images of the interior of the reaction chamber. Figure 1 As shown, the substrate condition cannot be accurately identified. Summary of the Invention

[0005] The purpose of this invention is to provide a method, system, and vapor deposition equipment for identifying the state of a substrate in a vapor deposition apparatus. The invention denoises blurry images captured under high-temperature conditions inside the reaction chamber to obtain clear images for identifying the state of the substrate.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] Record the initial temperature T0 of the reaction chamber, and obtain an initial image I0 of at least a portion of the upper surface of the tray at the initial temperature T0 through the observation window on the reaction chamber;

[0008] Record the n node temperatures T1~T during the process of the reaction chamber rising from the initial temperature T0 to the final temperature. n And obtain a background image I of at least a portion of the upper surface of the tray at each node temperature through the observation window on the reaction chamber. n ;

[0009] The initial image I0 and each background image I n Multiple frequency data and their corresponding amplitude data are obtained through Fourier transform, and each background image I is... n The noise data D is obtained by subtracting the amplitude of the initial image I0 at the corresponding frequency. n ;

[0010] The substrate is placed on the tray, and raw images R are acquired at each node temperature, including at least a portion of the upper surface of the tray and at least a portion of the upper surface of the substrate. n Each of the original images R n Amplitude data and noise data at the corresponding frequency after Fourier transform D n The difference is used to obtain the denoised data P. n where n > 0;

[0011] Use inverse Fourier transform to denoise all data P n The image is restored to its denoised state, and the different states of the substrate are identified.

[0012] Optionally, the method further includes:

[0013] Record the i node temperatures T in the reaction chamber from the final temperature to the end of the process. n+1 ~T n+i and the background image I at the corresponding temperature n+i And calculate the noise data D n+i , where i > 1;

[0014] The substrate is placed on the tray, and raw images R are recorded at each node temperature. n+i And calculate the corresponding denoised data P. n+i The denoised image is obtained to identify the substrate state during the process.

[0015] Optionally, the state includes substrate offset, number of contaminant particles, and / or substrate warping.

[0016] Optionally, at any node temperature, the shooting position of the image capturing device can be adjusted to acquire original images of different positions including the upper surface of the tray and the upper surface of the substrate.

[0017] Optionally, the tray includes a pit for receiving the substrate, and the denoised image includes the substrate and the edge of the pit, used to identify the offset of the substrate relative to the center of the pit.

[0018] Optionally, the tray includes a rotatable small tray for holding the substrate, and the denoised image includes the edge of the small tray for identifying the offset of the small tray relative to the large tray.

[0019] Optionally, the denoised image includes a portion of the substrate to determine the amount of particulate contamination.

[0020] Optionally, the process may also include adjusting the lens height of the image capturing device to obtain multiple denoised images, recording the lens adjustment distance corresponding to the image with the highest clarity, and using this information to determine the amount of substrate warping.

[0021] Optionally, the method further includes:

[0022] After adjusting the airflow or temperature of the reaction chamber based on the identification results of substrate offset, contaminant particle count, and / or substrate warping state, the original image R, which records at least a portion of the upper surface of the tray and at least a portion of the upper surface of the substrate at the node temperature, is executed again. n Each of the original images R n Amplitude data and noise data at the corresponding frequency after Fourier transform D n The difference is used to obtain the denoised data P. n Using inverse Fourier transform to denoise the data P n The steps include restoring the image to its denoised state and identifying the different states of the substrate.

[0023] Optionally, the initial image I0 includes an initial visible light image I. 01 and initial infrared image I 02 The background image I n Including background visible light image I n1 and background infrared image I n2 The noise data D n Includes visible light image noise data D n1 and infrared image noise data D n2 ;

[0024] The original image R n Including the original visible light image R n1 and the original infrared image R n2 The denoised data P n Including visible light denoised data P n1 And infrared denoising data P n2 The visible light denoised data P was denoised using inverse Fourier transform. n1 And infrared denoising data P n2 The image is restored to visible light and infrared images, and then the visible light and infrared images are fused to obtain the denoised image.

[0025] Optionally, all denoised data P n After restoring the denoised image, the method further includes:

[0026] The edges of the tray or substrate in the denoised image are detected and compared with the inherent hardware dimensions of the tray or substrate. Based on the comparison results, the position of the tray or substrate in the denoised image is repaired to obtain the geometrically distorted image.

[0027] A substrate state recognition system for a vapor deposition apparatus includes an image capturing device, a temperature measuring device, and a processor;

[0028] The image capturing device is used to capture images inside the reaction chamber;

[0029] The temperature measuring device is used to collect the temperature inside the reaction chamber;

[0030] The processor is communicatively connected to the image capturing device and the temperature measuring device, and is used to implement the steps of the method described in any of the above descriptions.

[0031] Optionally, the lens of the image capturing device is a telecentric lens.

[0032] Optionally, the lens of the image capturing device is an autofocus lens.

[0033] Optionally, the autofocus lens is driven by a piezoelectric ceramic actuator.

[0034] A vapor deposition apparatus, comprising:

[0035] The reaction chamber has a rotatable tray inside, which is used to support the substrate, and an observation window is provided on the upper side of the reaction chamber.

[0036] As described in any of the above-mentioned vapor deposition equipment substrate condition recognition systems, the image capturing device is mounted above the observation window, the viewing angle of the image capturing device is aligned with the tray, and the temperature measuring device is located inside the reaction chamber and aligned with the tray.

[0037] Compared with the prior art, the present invention has the following advantages:

[0038] This invention first obtains noise data corresponding to the temperatures at various nodes during the heating process of the reaction chamber without substrate processing. Then, with substrate processing performed, the original images captured at each node temperature are denoised based on the noise data obtained in the first stage during the heating process of the reaction chamber, resulting in clear denoised images used to identify different states of the substrate. The denoised images obtained in this way eliminate temperature-induced noise, improve image clarity, and help accurately identify the substrate state. Furthermore, the process parameters of the reaction chamber can be adjusted specifically according to the substrate state, thereby improving the thin film deposition quality. Attached Figure Description

[0039] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0040] Figure 1 A blurry image taken inside the high-temperature reaction chamber;

[0041] Figure 2a , 2b A usage status diagram of a substrate status identification system for a vapor deposition equipment provided by the present invention;

[0042] Figure 3 A flowchart of a method for identifying the state of a substrate in a vapor deposition apparatus provided by the present invention;

[0043] Figure 4a , Figure 4b This is a schematic diagram showing the offset of the substrate relative to the disk pit;

[0044] Figure 5a , Figure 5b This is a schematic diagram of particulate contamination on a substrate. Detailed Implementation

[0045] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0046] The present invention relates to a method, system, and vapor deposition equipment for substrate state identification. The method involves capturing images of the tray at the initial temperature and various node temperatures within the reaction chamber, comparing the images corresponding to each node temperature with the image corresponding to the initial temperature to obtain noise data corresponding to each node temperature, and during substrate processing, acquiring images of the substrate and tray at any node temperature during the heating process of the reaction chamber. After processing these images with the noise data corresponding to that node temperature, a denoised image is obtained. The denoised image is clearer than the original image, thus improving the accuracy of substrate state identification.

[0047] Please refer to Figures 2a-2b The vapor deposition apparatus provided by the present invention includes a reaction chamber 70, in which a rotatable tray 10 is provided for supporting a substrate. An observation window 60 is provided above the reaction chamber 70. The observation window is usually made of transparent quartz glass, which does not disrupt the vacuum level of the chamber and allows observation of the local process status within the chamber. The apparatus also includes a substrate status recognition system for vapor deposition, which can be mounted above the observation window to automatically acquire information from within the chamber. Figure 2a This diagram illustrates the usage status of a substrate state recognition system for a vapor deposition equipment provided by the present invention. The system includes an image capturing device 20, a temperature measuring device 30, and a processor 40. The image capturing device 20 can be a CCD (charge-coupled device) industrial camera or other assembled optoelectronic devices capable of recording image information. It is used to capture images within the reaction chamber. The image capturing device 20 is mounted above the observation window, with its viewing angle aligned with the tray 10 within the reaction chamber. The image capturing device 20 can capture images of the tray 10 and the substrate within the reaction chamber. In this embodiment, the temperature measuring device 30 is located within the reaction chamber and aligned with the tray 10, used to collect the temperature within the reaction chamber. The temperature measuring device 30 can also measure the temperature within the reaction chamber from other locations. Specific temperature measuring devices can be infrared temperature sensors or thermocouple contact sensors. Depending on the structural space within the chamber and the installation requirements of the temperature measuring device, it can be placed in different locations, as long as the temperature of the target component within the chamber can be obtained. The processor 40 is communicatively connected to the image capturing device 20 and the temperature measuring device 30, and is used to implement a substrate state identification method for a vapor deposition apparatus according to the present invention.

[0048] In some embodiments, the tray 10 rotates about the central axis of the tray, while the substrate on the tray rotates about the central axis of the substrate, thereby achieving a more uniform temperature and airflow distribution.

[0049] like Figure 3As shown, the present invention provides a substrate state identification method for a vapor deposition apparatus, comprising the following steps:

[0050] S1, record the initial temperature T0 of the reaction chamber, and obtain an initial image I0 of at least a portion of the upper surface of the tray at the initial temperature T0 through the observation window on the reaction chamber;

[0051] The initial temperature of the reaction chamber can be roughly equivalent to the ambient temperature or the room temperature at the current location. At this temperature, the temperatures of other components within the reaction chamber are essentially the same. The range of the initial image can be selected according to actual needs. If the process requires observing only a local area of ​​the substrate to satisfy the estimation of the substrate's condition, then only a portion of the area can be selected. In other cases, the range of the acquired image can be increased by expanding the viewing angle or by rotating the tray to continuously take pictures and stitch them together to form a complete image.

[0052] S2, record the n node temperatures T1~T during the process of the reaction chamber rising from the initial temperature T0 to the final temperature. n And obtain a background image I of at least a portion of the upper surface of the tray at each node temperature through the observation window on the reaction chamber. n ;

[0053] The node temperature can be reasonably selected based on process conditions, such as preliminary process estimations, changes in certain states on the tray or substrate after each certain temperature increase, or the impact on imaging effects. The intervals between adjacent node temperatures can be the same or different because changes in the substrate state may be non-linear. There are also multiple corresponding background images. If Tn is used as the general term for the node temperature, then In is a general term for the background image.

[0054] S3, the initial image I0 and each background image I n Multiple frequency data and their corresponding amplitude data are obtained through Fourier transform, and each background image I is... n The noise data D is obtained by subtracting the amplitude of the initial image I0 at the corresponding frequency. n ;

[0055] Converting an image into frequency data and its corresponding amplitude data using Fourier transform is a common technique and will not be elaborated upon here. When the substrate is not placed, the tray will spontaneously generate radiation intensity within a certain frequency range as the node temperature increases. This radiation will mask subtle radiation changes after the substrate is placed, resulting in a blurred image of the substrate. Therefore, the radiation distribution at each node temperature during this stage is considered noise data.

[0056] S4, the substrate is placed on the tray, and an original image R is acquired at each node temperature, including at least a portion of the upper surface of the tray and at least a portion of the upper surface of the substrate. n Each of the original images R n Amplitude data and noise data at the corresponding frequency after Fourier transform D n The difference is used to obtain the denoised data P. n where n > 0;

[0057] The data in the original image is the total radiation data after the substrate is placed and heated. It includes the radiation data of the tray heating alone. Only the data related to the substrate is needed for resolution. The radiation data of the tray will interfere with the resolution, so it is removed as noise.

[0058] S5, using inverse Fourier transform to combine all denoised data P n The image is restored to its denoised state, and the different states of the substrate are identified.

[0059] Similarly, using inverse Fourier transform to restore frequency amplitude data into an image is a common technique and will not be elaborated here.

[0060] The method of this invention comprises two stages: Steps S1-S3 constitute the first stage, used to obtain noise data corresponding to the temperature of each node during the heating process of the reaction chamber without substrate processing; Steps S4-S5 constitute the second stage, used to perform denoising processing on the original images captured at each node temperature during the heating process of the reaction chamber based on the noise data obtained in the first stage, when the substrate has been processed, to obtain clear denoised images for identifying different states of the substrate. The denoised images thus obtained eliminate noise caused by temperature, improve image clarity, and help accurately identify the state of the substrate. Furthermore, the process parameters of the reaction chamber can be adjusted specifically according to the state of the substrate, thereby improving the thin film deposition quality.

[0061] This invention, besides being applied to substrate state identification during the reaction chamber heating process, can also be applied to substrate state identification during a period of time while maintaining a high temperature in the reaction chamber during the process. Because after reaching the maximum temperature, the reaction chamber needs to be maintained at a high temperature for a period of time, but the actual temperature inside the reaction chamber may fluctuate, and the temperature at different locations on the tray or on the substrate may also be different, it is necessary to monitor the substrate state during this period. Specifically, it records the general term T of the reaction chamber temperature at the i node points from the final temperature to the end of the process. n+i And the general term I of the background image at the corresponding temperature n+i And calculate the noise data D n+i Where i > 1; place the substrate on the tray and record the node temperature T. n+iThe original image R below n+i And calculate the denoised data P n+i The denoised image is obtained, and the substrate state during the manufacturing process is identified. Noise data D is calculated. n+i Method and noise data D n The same, that is, the background image I n+i Multiple frequency data and their corresponding amplitude data are obtained through Fourier transform, and the background image I is... n+i The noise data D is obtained by subtracting the amplitude of the initial image I0 at the corresponding frequency. n+i Calculate the denoised data P n+i Methods and noise reduction data P n The same, that is, the original image R n+i Amplitude data and noise data at the corresponding frequency after Fourier transform D n+i The difference is used to obtain the denoised data P. n+i Then, the inverse Fourier transform is used to denoise the data P. n+i Restored to the denoised image.

[0062] In this invention, the initial temperature T0 is the temperature of the reaction chamber before heating, typically room temperature, and the final temperature is the high temperature required by the process. The temperatures at each node are T... n It can be several temperatures that are evenly distributed between the initial temperature and the final temperature, or it can be several distinctive temperatures.

[0063] In step S4, the original image R is obtained. n The image can be captured by a single imaging device, either partially or entirely, of the tray or substrate. Alternatively, multiple imaging devices can capture images from multiple locations, which are then stitched together to obtain the original image R. n .

[0064] In this embodiment, different states of the substrate are identified, including substrate offset, number of contaminant particles, and / or substrate warping.

[0065] like Figure 2a As shown, the tray 10 has a recess that can be used to accommodate the substrate. To ensure uniform film deposition, the substrate should be placed concentrically with the recess. However, during the process, the tray 10 rotates, and due to centrifugal force, the substrate may become eccentric with the recess. Therefore, it is necessary to identify whether the substrate has shifted and the amount of shift (i.e., the size of the gap between them after shift). In this embodiment, the denoised image obtained in step S5 can include the edges of the substrate and the recess, used to identify the amount of shift of the substrate relative to the center of the recess. Figure 4a and Figure 4b The diagram illustrates two offset states of the substrate relative to the pit. Figure 4aIn the image, the dark area 'a' on the left is the tray, and the arrow below points to the edge of the tray's pit. The light area 'b' on the right is the substrate, and the arrow above points to the edge of the substrate. The strip-shaped area 'c' in the middle is the gap formed after the substrate is offset to the right relative to the pit. Figure 4b In the image, the dark area 'a' on the left is the tray, and the light area 'b' on the right is the substrate. The edge of the tray coincides with the edge of the substrate, indicating that the substrate has shifted to the left relative to the tray pit and is in contact with the tray.

[0066] In some vapor deposition equipment, the tray 10 has several rotatable small trays 50 (e.g., air-float small trays) within its recess. These small trays 50 hold the substrate. During the process, the tray 10 rotates, and due to centrifugal force, the small trays 50 may become eccentric with respect to the recess of the tray 10. Therefore, it is necessary to identify whether the small trays have shifted and the amount of shift (i.e., the size of the gap between them after shift). Based on this, the denoised image obtained in step S5 includes the edges of the small trays, used to identify the amount of shift of the small trays relative to the tray.

[0067] To ensure the yield of the processed products, it is necessary to monitor particulate contamination on the substrate. Figure 5a , 5b The diagram schematically illustrates particulate contamination in a localized area on the substrate. The denoised image obtained in step S5 includes a portion of the substrate and is used to determine the amount of particulate contamination. In addition to determining the location of particulate contamination on the substrate, since a series of node temperatures correspond to different time points in the entire process, the occurrence of particulate contamination can be inferred from the time point where the contaminated substrate was located, and a curve showing the change in particulate contamination can be plotted. It can even be determined within which time periods particulate contamination decreased or increased.

[0068] During the manufacturing process, if the substrate warps, the captured image may become out of focus and blurry. Therefore, by adjusting the lens height of the image capturing device, multiple raw images (R) can be captured. niIf i > 1, after processing each original image, multiple denoised images are obtained. The distance of lens adjustment corresponding to the image with the highest clarity is recorded to determine the amount of substrate warping. Because the lens is positioned above the substrate and directly facing a certain area of ​​the substrate edge, when the substrate warps, the lens will become blurred due to the change in focal length. Therefore, the distance of lens adjustment required to refocus and obtain a clear image after adjusting the focal length corresponds to the amount of warping. The lens of the image capturing device can be an autofocus lens, specifically a fixed-focus lens with a piezoelectric ceramic actuator (linear motor). By keeping the image capturing device in a fixed position on the observed substrate surface, and using piezoelectric ceramic control, continuous autofocus is achieved to obtain a clear image. By recording the movement distance of the linear motor, the amount of substrate warping can be determined. Of course, other types of linear motors can also be used to drive the autofocus lens.

[0069] To achieve comprehensive monitoring of the tray and substrate within the reaction chamber, the image capturing device and its position can be adjusted at any temperature node to acquire raw images of different locations on the upper surfaces of the tray and substrate, ensuring that different positions on both the tray and substrate can be monitored. In this embodiment, the lens of the image capturing device can be a telecentric lens to meet the requirements of precision detection.

[0070] Furthermore, after adjusting the air blowing or temperature of the reaction chamber based on the identification results of substrate offset, number of contaminant particles and / or substrate warping state, steps S4 and S5 can be executed again to verify whether the expected adjustment result has been achieved by re-identifying the substrate state.

[0071] To further improve the clarity of the denoised image, a multi-band fusion method can be used for correction. Specifically, the image capturing device may include a visible light camera and a thermal imaging camera, with both cameras simultaneously capturing images of the same location to obtain both a visible light image and an infrared image. In this embodiment, the initial image I0 includes an initial visible light image I. 01 and initial infrared image I 02 The background image I n Including background visible light image I n1 and background infrared image I n2 The noise data D n Includes visible light image noise data D n1 and infrared image noise data D n2 Visible light image noise data D n1 The calculation method is as follows: The initial visible light image I... 01 and each background visible light image I n1 Multiple frequency data and their corresponding amplitude data are obtained through Fourier transform, and each background visible light image I is then processed. n1 Compared with the initial visible light image I01 The visible light image noise data D is obtained by subtracting the amplitudes at corresponding frequencies. n1 Infrared image noise data D n2 The calculation method is as follows: the initial infrared image I 02 And each background infrared image I n2 Multiple frequency data and their corresponding amplitude data are obtained through Fourier transform, and each background infrared image I is... n2 Compared with the initial infrared image I 02 The infrared image noise data D is obtained by subtracting the amplitudes at corresponding frequencies. n2 .

[0072] Accordingly, the original image R n Including the original visible light image R n1 and the original infrared image R n2 The denoised data P n Including visible light denoised data P n1 And infrared denoising data P n2 The visible light denoised data P was denoised using inverse Fourier transform. n1 And infrared denoising data P n2 The image is restored to visible light and infrared images, and then fused with these images to obtain the denoised image. Visible light denoising data P n1 The calculation method is as follows: For each of the original visible light images R... n1 The denoised visible light data P is obtained by subtracting the amplitude data at the corresponding frequency after Fourier transform from the visible light image noise data Dn1. n1 Infrared noise reduction data P n2 The calculation method is as follows: For each of the original infrared images R... n1 Amplitude data at the corresponding frequency after Fourier transform and infrared image noise data D n2 Infrared denoising data P is obtained by subtraction. n2 .

[0073] Furthermore, since geometric distortion inevitably occurs when an image capturing device acquires images, and the inventors discovered that the degree of distortion is enhanced in high-temperature environments, this embodiment uses denoised data P... n After restoring the denoised image, geometric distortion correction can be performed on the denoised image. Specifically, this includes: detecting the edge of the tray or substrate in the denoised image, comparing it with the inherent hardware size of the tray or substrate, and repairing the position data of the tray or substrate in the denoised image based on the comparison results to obtain the geometrically distorted corrected image.

[0074] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method for identifying the state of a substrate in a vapor deposition apparatus, wherein the reaction chamber of the vapor deposition apparatus contains a tray for supporting the substrate, characterized in that, Includes the following steps: Record the initial temperature T0 of the reaction chamber, and obtain an initial image I0 of at least a portion of the upper surface of the tray at the initial temperature T0 through the observation window on the reaction chamber; Record the n node temperatures T1~T during the process of the reaction chamber rising from the initial temperature T0 to the final temperature. n And obtain a background image I of at least a portion of the upper surface of the tray at each node temperature through the observation window on the reaction chamber. n ; The initial image I0 and each background image I n Multiple frequency data and their corresponding amplitude data are obtained through Fourier transform, and each background image I is... n The noise data D is obtained by subtracting the amplitude of the initial image I0 at the corresponding frequency. n ; The substrate is placed on the tray, and raw images R are acquired at each node temperature, including at least a portion of the upper surface of the tray and at least a portion of the upper surface of the substrate. n Each of the original images R n Amplitude data and noise data at the corresponding frequency after Fourier transform D n The difference is used to obtain the denoised data P. n where n > 0; Use inverse Fourier transform to denoise all data P n The image is restored to its denoised state, and the different states of the substrate are identified.

2. The substrate state identification method for a vapor deposition apparatus as described in claim 1, characterized in that, The method further includes: Record the i node temperatures T in the reaction chamber from the final temperature to the end of the process. n+1 ~T n+i and the background image I at the corresponding temperature n+i And calculate the noise data D n+i , where i > 1; The substrate is placed on the tray, and raw images R are recorded at each node temperature. n+i And calculate the corresponding denoised data P. n+i The denoised image is obtained to identify the substrate state during the process.

3. The substrate state identification method for a vapor deposition apparatus as described in claim 1, characterized in that, The conditions include substrate offset, number of contaminant particles, and / or substrate warping.

4. The substrate state identification method for a vapor deposition apparatus as described in claim 3, characterized in that, At any node temperature, adjust the shooting position of the image capturing device to acquire original images of different positions including the upper surface of the tray and the upper surface of the substrate.

5. The substrate state identification method for a vapor deposition apparatus as described in claim 3, characterized in that, The tray includes a pit for holding the substrate, and the denoised image includes the substrate and the edges of the pit, used to identify the offset of the substrate relative to the center of the pit.

6. The substrate state identification method for a vapor deposition apparatus as described in claim 3, characterized in that, The tray includes a rotatable small tray for holding the substrate, and the denoised image includes the edge of the small tray to identify the offset of the small tray relative to the large tray.

7. The substrate state identification method for a vapor deposition apparatus as described in claim 3, characterized in that, The denoised image includes a portion of the substrate and is used to determine the amount of particulate contamination.

8. The substrate state identification method for a vapor deposition apparatus as described in claim 3, characterized in that, The process also includes adjusting the lens height of the image capturing device to obtain multiple denoised images, recording the lens adjustment distance corresponding to the image with the highest clarity, and using this information to determine the amount of substrate warping.

9. The substrate state identification method for a vapor deposition apparatus as described in claim 3, characterized in that, The method further includes: After adjusting the airflow or temperature of the reaction chamber based on the identification results of substrate offset, contaminant particle count, and / or substrate warping state, the process is repeated to acquire original images R containing at least a portion of the upper surface of the tray and at least a portion of the upper surface of the substrate at each of the stated node temperatures. n Each of the original images R n Amplitude data and noise data at the corresponding frequency after Fourier transform D n The difference is used to obtain the denoised data P. n The inverse Fourier transform is used to denoise the data P. n The steps include restoring the image to its denoised state and identifying the different states of the substrate.

10. The substrate state identification method for a vapor deposition apparatus as described in claim 1, characterized in that, The initial image I0 includes the initial visible light image I. 01 and initial infrared image I 02 The background image I n Including background visible light image I n1 and background infrared image I n2 The noise data D n Includes visible light image noise data D n1 and infrared image noise data D n2 ; The original image R n Including the original visible light image R n1 and the original infrared image R n2 The denoised data P n Including visible light denoised data P n1 And infrared denoising data P n2 The visible light denoised data P was denoised using inverse Fourier transform. n1 And infrared denoising data P n2 The image is restored to visible light and infrared images, and then the visible light and infrared images are fused to obtain the denoised image.

11. The substrate state identification method for a vapor deposition apparatus as described in claim 1, characterized in that, P of all denoised data n After restoring the denoised image, the method further includes: The edges of the tray or substrate in the denoised image are detected and compared with the inherent hardware dimensions of the tray or substrate. Based on the comparison results, the position of the tray or substrate in the denoised image is repaired to obtain the geometrically distorted image.

12. A substrate state identification system for a vapor deposition apparatus, characterized in that, Includes an image capturing device, a temperature measuring device, and a processor; The image capturing device is used to capture images inside the reaction chamber; The temperature measuring device is used to collect the temperature inside the reaction chamber; The processor is communicatively connected to the image capturing device and the temperature measuring device, and is used to execute the steps of the method as described in any one of claims 1-11.

13. The substrate state identification system for a vapor deposition apparatus as described in claim 12, characterized in that, The lens of the image capturing device is a telecentric lens.

14. The substrate condition identification system for a vapor deposition apparatus as described in claim 12, characterized in that, The lens of the image capturing device is an autofocus lens.

15. The substrate state identification system for a vapor deposition apparatus as described in claim 14, characterized in that, The autofocus lens is driven by a piezoelectric ceramic actuator.

16. A vapor deposition apparatus, characterized in that, include: The reaction chamber has a rotatable tray inside, which is used to support the substrate, and an observation window is provided on the upper side of the reaction chamber. The substrate state recognition system of the vapor deposition apparatus as described in any one of claims 12-15, wherein the image capturing device is mounted above the observation window, the viewing angle of the image capturing device is aligned with the tray, and the temperature measuring device is located inside the reaction chamber and aligned with the tray.

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