An ultracold atom beam source screening device

Abstract

The application belongs to the technical field of semiconductor material processing, and discloses an ultra-atom beam source screening device. The ultra-atom beam source screening device comprises a support seat, an outer shell, an inner shell, a magnet assembly, a sandwich layer and a cover assembly, the magnet assembly is arranged between the outer shell and the inner shell, the sandwich layer is arranged between the outer shell and the magnet assembly, and the cover assembly comprises a first cover and a second cover, and the first cover and the second cover are arranged at two ends of the outer shell respectively. After ionization, the ultra-atom beam source enters a channel in the inner shell, the magnet assembly can generate a magnetic field by being arranged, the ultra-atom ion after ionization of the ultra-atom beam source is emitted in parallel to the channel, the mono-atom ion is deflected and collides with the inner wall of the channel, and then the mono-atom ion is screened out, so that the screening of the ultra-atom beam source is realized, and the process effect is improved. The first cover and the second cover are arranged to protect the structure inside the outer shell. The sandwich layer is arranged to facilitate the fixation of the magnet assembly.

Description

Technical Field

[0001] This invention relates to the field of semiconductor material processing technology, and in particular to a superatomic beam source screening device. Background Technology

[0002] With the development of very large-scale integrated circuits, semiconductor surface processing technology has become increasingly sophisticated, especially in wafer surface polishing and etching processes, where the precision requirements are extremely high. In conventional plasma processing, gas molecules are ionized to form monoatomic ions that bombard the wafer surface, significantly injecting these ions into the wafer lattice and affecting surface smoothness and lattice quality. Superatoms are nanoparticles with diameters on the nanometer scale, composed of gas molecules bound together by van der Waals forces. These superatoms contain hundreds to thousands of gas molecules. While they can be considered as a single atom during ionization collisions and electromagnetic field motion, their mass and collision cross-section are several to thousands of times larger than that of monoatoms. When superatoms collide with material surfaces, lateral sputtering and localized thermal annealing effects occur, effectively improving surface smoothness and lattice quality. This characteristic has yielded excellent processing results in wafer surface treatment.

[0003] However, the formation process of superatomic beams faces many unresolved problems. For example, in the process of forming superatoms by combining colliding gas molecules through intermolecular van der Waals forces after adiabatic expansion, not all gas molecules can combine to form superatoms; those that do not combine exist independently. These independent gas molecules are ionized to form monatomic ions. These monatomic ions have a significant implantation effect on the wafer surface lattice when subsequently bombarding the wafer surface, affecting surface smoothness and lattice quality, resulting in poor processing results. Therefore, a superatomic beam source screening device is urgently needed to remove the independent gas molecules in the superatomic beam source and solve the problem of poor semiconductor surface processing results. Summary of the Invention

[0004] The purpose of this invention is to provide a superatomic beam source screening device that can screen out gas molecules that exist alone in the superatomic beam source, thereby solving the problem of poor semiconductor surface processing effect.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A superatomic beam source screening device, comprising:

[0007] Support base;

[0008] The outer casing is fixed to the support base;

[0009] An inner shell is disposed within the outer shell, and the inner shell is provided with a channel for the ionized superatomic beam source to pass through;

[0010] A magnet assembly is disposed between the outer shell and the inner shell. The magnet assembly can generate a magnetic field, causing the superatomic ions ionized by the superatomic beam source to be emitted parallel to the channel, and causing the monoatomic ions to be deflected and screened out.

[0011] A sandwich layer is provided between the outer shell and the magnet assembly;

[0012] The cover assembly includes a first cover and a second cover, which are respectively disposed at both ends of the outer shell.

[0013] In some possible implementations, the magnet assembly causes the magnetic field strength near the axis within the channel to be less than the magnetic field strength near the inner wall.

[0014] In some possible implementations, the magnet assembly includes a plurality of magnets arranged around the outer wall of the inner housing.

[0015] In some possible implementations, the interlayer is a heat dissipation layer.

[0016] In some possible implementations, the interlayer is provided with a coil for containing a cooling medium, and the coil is provided with a connector for introducing the cooling medium.

[0017] In some possible implementations, the superatomic beam source screening device further includes a first limiting member and a second limiting member, one side of the first limiting member abutting against the first cover, and the other side of the first limiting member abutting against both the magnet assembly and the interlayer; one side of the second limiting member abutting against the second cover, and the other side of the second limiting member abutting against both the magnet assembly and the interlayer.

[0018] In some possible implementations, the superatomic beam source screening device further includes a third limiting member and a fourth limiting member. The inner shell is made of a conductive material, and the third and fourth limiting members are both made of insulating materials. The third limiting member is disposed between the first cover and the first limiting member, and the third limiting member abuts against the outer wall of the inner shell. The fourth limiting member is disposed between the second cover and the second limiting member, and the fourth limiting member abuts against the outer wall of the inner shell.

[0019] In some possible implementations, the inner housing includes a housing body and a housing cover, the housing body being able to abut against the third limiting member, and the housing cover being detachably connected to the end of the housing body and being able to abut against the fourth limiting member.

[0020] In some possible implementations, the superatomic beam source screening device further includes a first screw and a second screw, wherein the first screw passes through the first cover and the first limiting member in sequence and is threadedly connected to the interlayer; and the second screw passes through the second cover and the second limiting member in sequence and is threadedly connected to the interlayer.

[0021] In some possible implementations, the superatomic beam source screening device further includes a third screw and a fourth screw, the third screw passing through the first cover and threadedly connected to the outer shell; the fourth screw passing through the second cover and threadedly connected to the outer shell.

[0022] The beneficial effects of this invention are:

[0023] The superatomic beam source screening device provided by this invention includes a support base, an outer shell, an inner shell, a magnet assembly, a sandwich layer, and a cover assembly. The ionized superatomic beam source enters the channel of the inner shell. By setting up the magnet assembly, a magnetic field is generated, causing the superatomic ions ionized by the superatomic beam source to exit parallel to the channel. This deflects the monatomic ions and causes them to collide with the inner wall of the channel, thereby removing the monatomic ions. This achieves the removal of isolated gas molecules from the superatomic beam source, improving the process efficiency. The first and second covers protect the internal structure of the outer shell. The sandwich layer facilitates the fixation of the magnet assembly, ensuring structural stability. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the superatomic beam source screening device provided by the present invention;

[0025] Figure 2 This is a cross-sectional view of the superatomic beam source screening device involved in this invention;

[0026] Figure 3 This is a partial structural schematic diagram of the superatomic beam source screening device involved in this invention.

[0027] In the picture:

[0028] 1. Support base; 2. Outer shell; 3. Inner shell; 31. Channel; 32. Shell body; 33. Shell cover; 4. Magnet assembly; 41. Magnet; 5. Interlayer; 51. First threaded hole; 52. Second threaded hole; 53. Connector; 6. First cover; 61. First limiting member; 7. Second cover; 71. Second limiting member; 8. Protective member; 9. Third limiting member; 10. Fourth limiting member. Detailed Implementation

[0029] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0030] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0032] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0033] like Figures 1 to 3As shown, the present invention provides a superatomic beam source screening device, including a support base 1, an outer shell 2, an inner shell 3, a magnet assembly 4, a sandwich layer 5, and a cover assembly. The outer shell 2 is fixed to the support base 1; the inner shell 3 is disposed inside the outer shell 2, and the inner shell 3 has a channel 31 for the ionized superatomic beam source to pass through; the magnet assembly 4 is disposed between the outer shell 2 and the inner shell 3, and the magnet assembly 4 can generate a magnetic field, so that the superatomic ions ionized by the superatomic beam source are emitted parallel to the channel 31, and can then be incident on the semiconductor surface, and deflected and screened out by the monatomic ions. Specifically, the monatomic ions are screened out by colliding with the inner wall of the channel 31 or colliding with the baffles disposed outside the outer shell 2; the sandwich layer 5 is disposed between the outer shell 2 and the magnet assembly 4; the cover assembly includes a first cover 6 and a second cover 7, which are respectively disposed at both ends of the outer shell 2.

[0034] The ionized superatomic beam source enters the channel 31 of the inner shell 3. Since the mass of superatomic ions is hundreds to thousands of times that of monatomic ions, their deflection radii differ by tens to hundreds of times. Lower-mass monatomic ions have small deflection radii, while higher-mass superatomic ions have large deflection radii and are almost unaffected by the magnetic field. By setting up the magnet assembly 4, the superatomic ions with larger deflection radii are emitted parallel to the channel 31, while the monatomic ions with smaller deflection radii collide with the inner wall of the channel 31 or with the baffles set on the outer shell 2 and are thus screened out. This achieves the screening of the superatomic beam source and improves the process efficiency. The first cover 6 and the second cover 7 protect the internal structure of the outer shell 2. The interlayer 5 facilitates the fixation of the magnet assembly 4, ensuring structural stability.

[0035] Optionally, the magnet assembly 4 makes the magnetic field strength near the axis of the channel 31 less than the magnetic field strength near the inner wall. Since the greater the magnetic field strength, the smaller the deflection radius of the ions, the above arrangement makes the deflection radius of the monatomic ions smaller from the axis of the channel 31 towards the inner wall, making it easier for the monatomic ions to collide with the inner shell 3, and further preventing the monatomic ions from entering the semiconductor surface.

[0036] Optionally, the magnet assembly 4 includes a plurality of magnets 41 arranged around the outer wall of the inner housing 3, which can concentrate the magnetic field inside the channel 31. Optionally, the magnets 41 are bonded or riveted to the interlayer 5.

[0037] Optionally, at least four magnets 41 are provided, with two magnets 41 arranged opposite each other having the same magnetization direction, and at least four magnets 41 forming a Heilbeck array. Specifically, in this embodiment, twelve magnets 41 are provided, and the cross-section of each magnet 41 is an isosceles trapezoid. The magnetization direction between two adjacent magnets 41 is rotated by 30°. This arrangement causes the magnetic field strength in the channel 31 to gradually increase from the axis towards the inner wall. Optionally, the magnetic field at the axis position is a uniform magnetic field with a magnetic field strength of 0.5T. Optionally, the length of the upper base of the isosceles trapezoid ranges from 3 to 80 mm. The longer the upper base, the weaker the magnetic field strength in the channel 31. A weaker magnetic field strength results in a too small deflection angle for monatomic ions, making it impossible to filter out monatomic ions. The shorter the upper base, the stronger the magnetic field strength in the channel 31, which leads to an increased deflection angle for monatomic ions. A large number of monatomic ions are ejected onto the inner wall of the inner shell 3, causing a sharp rise in the temperature of the inner shell 3. In addition, some smaller superatoms are affected and deflected, failing to be ejected smoothly, resulting in reduced efficiency.

[0038] Optionally, the interlayer 5 serves as a heat dissipation layer, capable of dissipating heat from the inner shell 3 and preventing damage to the inner shell 3 from prolonged heating due to collisions with single-atom ions. Optionally, in this embodiment, the interlayer 5 is equipped with a coil for containing the cooling medium, and the coil has a connector 53 for introducing the cooling medium. This configuration provides better heat dissipation and facilitates connection to an external water or air source.

[0039] Optionally, the superatomic beam source screening device further includes a first limiting member 61 and a second limiting member 71. One side of the first limiting member 61 abuts against the first cover 6, and the other side of the first limiting member 61 abuts against both the magnet assembly 4 and the interlayer 5. One side of the second limiting member 71 abuts against the second cover 7, and the other side of the second limiting member 71 abuts against both the magnet assembly 4 and the interlayer 5. By setting the first limiting member 61 and the second limiting member 71, misalignment between the magnet assembly 4 and the interlayer 5 is avoided, and the overall structure is also made more stable.

[0040] Optionally, the superatomic beam source screening device further includes a third limiting member 9 and a fourth limiting member 10. The inner shell 3 is made of a conductive material, while the third limiting member 9 and the fourth limiting member 10 are both made of insulating materials. The third limiting member 9 is disposed between the first cover 6 and the first limiting member 61, and abuts against the outer wall of the inner shell 3. The fourth limiting member 10 is disposed between the second cover 7 and the second limiting member 71, and abuts against the outer wall of the inner shell 3. When monatomic ions strike the wall of the channel 31 of the inner shell 3, a current is generated, which flows through the inner shell 3. The third limiting member 9 and the fourth limiting member 10 are both made of insulating materials, which can prevent the current from leaking out of the inner shell 3. The third limiting member 9 abuts against the outer wall of the inner shell 3, and the fourth limiting member 10 abuts against the outer wall of the inner shell 3, so that there are gaps between the first limiting member 61, the second limiting member 71, and the magnet assembly 4 and the inner shell 3, preventing current from flowing in. Furthermore, since there is a gap between the outer wall of the inner shell 3 and other structures, a microammeter can be connected to the outer wall of the inner shell 3 to measure the flow rate of monatomic ions hitting the wall surface. Specifically, the inner shell 3 is made of a metallic material.

[0041] Optionally, the inner housing 3 includes a housing body 32 and a housing cover 33. The housing body 32 can abut against the third limiting member 9, and the housing cover 33 is detachably connected to the end of the housing body 32 and can abut against the fourth limiting member 10. This configuration facilitates the installation of the inner housing 3 while achieving axial limiting of the inner housing 3.

[0042] Optionally, the superatomic beam source screening device also includes a first screw and a second screw. The first screw passes through the first cover 6 and the first limiting member 61 in sequence and is threadedly connected to the interlayer 5; the second screw passes through the second cover 7 and the second limiting member 71 in sequence and is threadedly connected to the interlayer 5. This configuration facilitates disassembly and ensures a secure connection.

[0043] Optionally, the superatomic beam source screening device also includes a third screw and a fourth screw. The third screw passes through the first cover 6 and is threadedly connected to the outer shell 2; the fourth screw passes through the second cover 7 and is threadedly connected to the outer shell 2. This arrangement ensures a reliable connection between the first cover 6, the second cover 7, and the outer shell 2.

[0044] Optionally, the superatomic beam source screening device also includes a protective element 8, which is disposed on the magnet assembly 4. By providing the protective element 8, friction and wear on the magnet assembly 4 can be reduced, thus extending the lifespan of the magnet assembly 4.

[0045] Specifically, when installing the superatomic beam source screening device, firstly, the interlayer 5 is placed inside the outer shell 2, the magnet assembly 4 is installed inside the interlayer 5, and the protective component 8 is installed. Then, the first limiting component 61 and the second limiting component 71 are placed at both ends of the magnet assembly 4 and the interlayer 5. Next, the third limiting component 9 and the fourth limiting component 10 are placed outside the first limiting component 61 and the second limiting component 71, respectively. Then, the first cover 6 and the second cover 7 are installed. Finally, the shell body 32 is inserted, and the shell cover 33 is connected to the end of the shell body 32.

[0046] Optionally, the superatomic beam source screening device further includes an incident end cap, which is fixed to the side of the first cover 6 away from the outer shell 2. Optionally, the superatomic beam source screening device further includes a heat sink, which is fixed to the side of the second cover 7 away from the outer shell 2.

[0047] Optionally, to further ensure the stability of the structure, the superatomic beam source screening device includes a fifth screw and a sixth screw arranged at intervals. The interlayer 5 is provided with a first threaded hole 51 and a second threaded hole 52. The fifth screw passes through the support base 1 and the outer shell 2 in sequence and is threadedly connected to the first threaded hole 51; the sixth screw passes through the outer shell 2 and is threadedly connected to the second threaded hole 52.

[0048] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art will be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A supraatomic beam source screening device, characterized in that, include: Support base (1); The outer shell (2) is fixed to the support base (1); The inner shell (3) is disposed inside the outer shell (2), and the inner shell (3) is provided with a channel (31) for the ionized superatomic beam source to pass through; A magnet assembly (4) is disposed between the outer shell (2) and the inner shell (3). The magnet assembly (4) can generate a magnetic field, causing the superatomic ions after being ionized by the superatomic beam source to be emitted parallel to the channel (31), and causing the monatomic ions to be deflected and screened out. A sandwich layer (5) is disposed between the outer shell (2) and the magnet assembly (4); The cover assembly includes a first cover (6) and a second cover (7), the first cover (6) and the second cover (7) being respectively disposed at both ends of the outer shell (2); The magnet assembly (4) makes the magnetic field strength near the axis in the channel (31) less than the magnetic field strength near the inner wall; The magnet assembly (4) includes a plurality of magnets (41), which are arranged around the outer wall of the inner housing (3); The number of magnets (41) is ≥4, the magnetization direction of two magnets (41) arranged opposite each other is the same, and the cross-section of each magnet (41) is an isosceles trapezoid.

2. The supraatomic beam source screening device according to claim 1, characterized in that, The interlayer (5) is a heat dissipation layer.

3. The supraatomic beam source screening device according to claim 2, characterized in that, The interlayer (5) is provided with a coil for containing the cooling medium, and the coil is provided with a connector (53) for introducing the cooling medium.

4. The supraatomic beam source screening device according to claim 1, characterized in that, The superatomic beam source screening device further includes a first limiting member (61) and a second limiting member (71). One side of the first limiting member (61) abuts against the first cover (6), and the other side of the first limiting member (61) abuts against the magnet assembly (4) and the interlayer (5). One side of the second limiting member (71) abuts against the second cover (7), and the other side of the second limiting member (71) abuts against the magnet assembly (4) and the interlayer (5).

5. The supraatomic beam source screening device according to claim 4, characterized in that, The superatomic beam source screening device further includes a third limiting member (9) and a fourth limiting member (10). The inner shell (3) is made of conductive material, and the third limiting member (9) and the fourth limiting member (10) are both made of insulating material. The third limiting member (9) is disposed between the first cover (6) and the first limiting member (61), and the third limiting member (9) abuts against the outer wall of the inner shell (3). The fourth limiting member (10) is disposed between the second cover (7) and the second limiting member (71), and the fourth limiting member (10) abuts against the outer wall of the inner shell (3).

6. The supraatomic beam source screening device according to claim 5, characterized in that, The inner shell (3) includes a shell body (32) and a shell cover (33). The shell body (32) can abut against the third limiting member (9). The shell cover (33) is detachably connected to the end of the shell body (32) and can abut against the fourth limiting member (10).

7. The supraatomic beam source screening device according to claim 4, characterized in that, The superatomic beam source screening device also includes a first screw and a second screw. The first screw passes through the first cover (6) and the first limiting member (61) in sequence and is threadedly connected to the interlayer (5). The second screw passes through the second cover (7) and the second limiting member (71) in sequence and is threadedly connected to the interlayer (5).

8. The supraatomic beam source screening device according to any one of claims 1-7, characterized in that, The superatomic beam source screening device also includes a third screw and a fourth screw. The third screw passes through the first cover (6) and is threaded to the outer shell (2); the fourth screw passes through the second cover (7) and is threaded to the outer shell (2).

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