FeIn2Se4 photoelectric detector
By using FeIn2Se4 material to prepare the photodetector, the problem of insufficient spectral response range and noise level in the prior art is solved, and the effects of high sensitivity and wide spectral response are achieved.
Patent Information
- Application Number
- CN202510120594.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-25
- Publication Date
- 2025-05-30
AI Technical Summary
Existing photodetector materials have limitations in the spectral response range and noise level, making it difficult to meet the needs of high sensitivity and wide spectral response.
FeIn2Se4 material is used as the light absorption and transport layer, and the FeIn2Se4 material is grown or mechanically stripped off the dielectric layer, and combined with micro-nano mask laser direct writing technology is used to form a FeIn2Se4 photodetector.
The excellent photoelectric characteristics of the photodetector and periodic response to polarized light are realized, the spectral detection range and stability are improved, and the spectrum of 254nm~1380nm can be effectively detected.
Smart Images
Figure CN120076427A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor devices, and particularly relates to a FeIn 2 Se 4 photodetector. Background Art
[0002] A photodetector is a device that converts optical signals into electrical signals, and its working principle is based on various photoelectric effects generated when light interacts with matter. The research on photodetectors covers a variety of materials and structures. Traditional materials such as indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), and indium antimonide (InSb) still occupy an important position. In recent years, new materials such as quantum dots, two-dimensional materials (such as graphene, transition metal sulfides), and wide-bandgap semiconductors (such as ZnO, GaN, SiC) have gradually become research hotspots. These materials have excellent optoelectronic properties, enabling higher sensitivity, a wider spectral response range, and lower noise levels.
[0003] Chalcogenide layered compounds have attracted attention due to their wide structural diversity and unique physical properties (such as superconductivity, optical properties, solar energy conversion, thermoelectricity, and photovoltaic conversion). Binary iron chalcogenide compounds represented by FeS 2 and FeSe 2 are promising photovoltaic materials due to their rich content, non-toxic elements, suitable bandgaps, and very high light absorption coefficients. However, the instability of binary layered chalcogenides has prompted the study of new ternary chalcogenide materials. Ternary II-III 2 -VI 4 layered compounds have considerable potential for use in solar cells because they are p-type semiconductors with bandgaps in the range of 1.1 - 2.0 eV.
[0004] FeIn 2 Se 4 is a ternary chalcogenide with a two-dimensional layered structure, exhibiting tunable electronic, optical, and thermal properties. Its monolayer structure is a non-magnetic semiconductor in the hexagonal crystal system, with a bandgap suitable for photocatalytic hydrogen production reactions. In addition, the optical absorption spectrum of FeIn 2 Se 4 indicates that it is a potential photovoltaic absorption material, and its theoretical maximum photoelectric conversion efficiency can reach 27%, comparable to existing high-performance thin-film absorption materials (such as CdTe and CuInSe 2 ). Therefore, how to combine FeIn 2 Se 4 materials into photodetectors has become a research direction. Summary of the Invention
[0005] The present invention provides a FeIn2 Se 4 A photodetector designed to achieve excellent optoelectronic properties based on FeIn 2 Se 4 materials.
[0006] The present invention provides a FeIn 2 Se 4 photodetector, comprising a substrate, a dielectric layer, a light absorption and transmission layer, an electrode, an adhesion layer, and a metal layer. The dielectric layer covers the substrate, the light absorption and transmission layer covers the dielectric layer, the electrode forms an ohmic contact with the light absorption and transmission layer, the adhesion layer and the metal layer are sequentially plated on the electrode. The light absorption and transmission layer is made of FeIn 2 Se 4 material, and the light absorption and transmission layer is grown on the dielectric layer through FeIn 2 Se 4 material or is covered on the dielectric layer after mechanically exfoliating FeIn 2 Se 4 material. The electrode is formed by direct laser writing on the FeIn 2 Se 4 material through a micro-nano mask plate.
[0007] As a further improvement of the present invention, the material of the substrate is one of Si, SiC, and SOI.
[0008] As a further improvement of the present invention, the material of the dielectric layer is one of SiO 2 、Al 2 O 3 、HfO 2 。
[0009] As a further improvement of the present invention, the thickness of the FeIn 2 Se 4 material is 40nm to 50nm.
[0010] As a further improvement of the present invention, the material of the adhesion layer is one of Cr, Ti, and Pd.
[0011] As a further improvement of the present invention, the material of the metal layer is one of Au, Ag, Pt, and Ag.
[0012] As a further improvement of the present invention, the dielectric layer covers the substrate by atomic layer deposition growth method.
[0013] As a further improvement of the present invention, the method of plating the adhesion layer and the metal layer on the electrode is one of magnetron sputtering, thermal evaporation coating, and electron beam evaporation coating.
[0014] As a further improvement of the present invention, the FeIn 2 Se 4 material is grown on the dielectric layer by one of physical vapor deposition, chemical vapor transport, and vertical Bridgman method.
[0015] As a further improvement of the present invention, the laser direct writing method of the electrode on the FeIn 2 Se 4 material includes being formed by laser etching using a lithography machine or being formed by electron beam exposure.
[0016] The beneficial effects of the present invention are: by utilizing the excellent properties of the FeIn 2 Se 4 material, such as narrow band gap, in-plane anisotropy, high carrier mobility, absorption efficiency, etc., to fabricate a photodetector to obtain excellent optoelectronic properties and periodic response to polarized light. Description of the Drawings
[0017] Figure 1 is the structural diagram of the FeIn 2 Se 4 photodetector of the present invention; Figure 2 is the schematic optical microscope diagram of the FeIn 2 Se 4 photodetector of the present invention; Figure 3 is the schematic Raman spectroscopy characterization diagram of the present invention; Figure 4 is the morphological schematic diagram of the FeIn 2 Se 4 photodetector of the present invention under an atomic force microscope; Figure 5 is the thickness characterization schematic diagram of the FeIn 2 Se 4 material after measurement by an atomic force microscope of the present invention; Figure 6 is the I ds -V g curve graph of the field effect transistor of the present invention; Figure 7 is the I ds -V ds curve graph of the field effect transistor of the present invention; Figure 8 is the schematic diagram of the photoelectric effect of the photodetector of the present invention for lasers of various wavelengths; Figure 9 is the result schematic diagram of the optical detection stability of the photodetector of the present invention; Figure 10It is the Raman spectrum characterization diagram of the photodetector of the present invention at different incident angles; Figure 11 It is the change diagram of the intensity ratio of two characteristic peaks of the photodetector of the present invention at different incident angles. Detailed implementation manners
[0018] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments.
[0019] The main objective of the present invention is to propose and fabricate a photodetector based on FeIn 2 Se 4 to achieve spectral detection in different bands, and to discover that the photodetector has nonlinear and anisotropic optical characteristics, and the ratio of characteristic peaks will change periodically with the change of the incident angle.
[0020] Specifically, as Figure 1 shown, a FeIn 2 Se 4 photodetector of the present invention includes a substrate 1, a dielectric layer 2, a light absorption and transmission layer 3, an electrode 4, an adhesive layer, and a metal layer. The dielectric layer 2 covers the substrate 1, the light absorption and transmission layer 3 covers the dielectric layer 2, the electrode 4 forms an ohmic contact with the light absorption and transmission layer 3, and an adhesive layer and a metal layer are sequentially plated on the electrode 4. The light absorption and transmission layer 3 is made of FeIn 2 Se 4 material. The light absorption and transmission layer 3 is grown on the dielectric layer 2 through FeIn 2 Se 4 material or is covered on the dielectric layer 2 by mechanically peeling FeIn 2 Se 4 material. The electrode 4 is formed by direct laser writing on the FeIn 2 Se 4 material through a micro-nano mask plate.
[0021] The material of the substrate 1 is one of Si, SiC, and SOI.
[0022] The material of the dielectric layer 2 is one of SiO 2 , Al 2 O 3 , HfO 2 . The dielectric layer 2 covers the substrate 1 by means of atomic layer deposition growth. The thickness of the dielectric layer 2 is 30 nm to 40 nm.
[0023] FeIn 2 Se 4 The thickness of the material is 40 nm to 50 nm.
[0024] The bonding layer material is one of Cr, Ti, and Pd.
[0025] The material of the metal layer is one of Au, Ag, Pt, and Ag.
[0026] The bonding layer and the metal layer are deposited on the electrode 4 by one of the methods of magnetron sputtering, thermal evaporation coating, and electron beam evaporation coating.
[0027] FeIn 2 Se 4 The growth method of the material on the dielectric layer 2 includes one of physical vapor deposition, chemical vapor transport, and vertical Bridgman method. The structure of this photodetector is that FeIn 2 Se 4 is covered on the substrate formed by the substrate 1 and the dielectric layer 2, and then the electrode 4 and FeIn 2 Se 4 form an ohmic contact.
[0028] The laser direct writing method of the electrode 4 on the FeIn 2 Se 4 material includes being formed by laser etching with a lithography machine or being formed by electron beam exposure. That is, the pattern making method of the electrode 4 is etched or exposed by using a lithography machine or an electron beam exposure machine.
[0029] The photodetector of the present invention provides the substrate 1, and FeIn 2 Se 4 is grown or transferred and mechanically peeled off. A micro-nano mask template is prepared by a laser direct writing process, the electrode 4 is evaporated by a multi-chamber coating instrument, and the obtained photodetector is characterized by an optical microscope (OM), an atomic force microscope (AFM), and a scanning electron microscope (SEM) to obtain the thickness information of FeIn 2 Se 4 and the corresponding EDS analysis. After preparing the electrode 4 by lithography and evaporation, the optoelectronic performance of the device is characterized. When testing the optical characteristics, it is found that the photodetector based on FeIn 2 Se 4 has a sensitive and stable optoelectronic detection ability and can detect lasers of various wavelengths. By changing the incident light angle, the ratio of the intensities of the two characteristic peaks B 2 Se 4 and A 3g of FeIn g2 will change with the change of the angle. The finally obtained FeIn 2 Se 4 photodetector can realize the detection of the light direction. The FeIn 2 Se 4The spectral detection range of the photodetector is 254nm to 1380nm.
[0030] FeIn 2 Se 4 is a ternary chalcogenide with a two-dimensional layered structure, exhibiting tunable electronic, optical, and thermal properties. Its monolayer structure is a non-magnetic semiconductor in the hexagonal crystal system, with a bandgap suitable for photocatalytic hydrogen production reactions. FeIn 2 Se 4 's optical absorption spectrum indicates that it is a potential photovoltaic absorption material, with a theoretical maximum photoelectric conversion efficiency of up to 27%, comparable to existing high-performance thin-film absorption materials (such as CdTe and CuInSe 2 ). In addition, the hexagonal crystal structure of FeIn 2 Se 4 has three-fold symmetry, and FeIn 2 Se 4 is anisotropic.
[0031] The present invention is a photodetector based on FeIn 2 Se 4 The process steps from preparation to characterization are as follows: Provide substrate 1. This step can use one of Si, SiC, and SOI as substrate 1, and a dielectric layer 2 is prepared on substrate 1 by atomic layer deposition. Part of substrate 1 needs to be cleaned first to ensure the cleanliness of the substrate surface. Here, taking the cleaning of a silicon wafer as an example, the cleaning steps are as follows: First, put the silicon wafer into a beaker, pour in an appropriate amount of isopropanol, and perform ultrasonic cleaning for 15 minutes. Then pour out the isopropanol, inject an appropriate amount of deionized water, and perform ultrasonic cleaning again for 15 minutes. After that, take out the silicon wafer, dry it with nitrogen, and finally clean the silicon wafer with ultraviolet ozone for 15 minutes. The cleaning step is completed.
[0032] FeIn 2 Se 4 The material can be obtained by growth or by mechanical exfoliation. The growth method can use physical vapor deposition, chemical vapor transport, vertical Bridgman method, etc. The following mainly introduces the mechanical exfoliation method: The obtained FeIn 2 Se 4The block is placed on the blue tape and torn repeatedly. After tearing the blue tape several times, it is placed on PDMS (polydimethylsiloxane). The position and focal length are adjusted under a microscope, and the thickness of the material remaining on the PDMS is observed to find a suitable material. The thinner the material, the more transparent its color becomes, and it is closer to the color of the substrate after being transferred to the substrate. After selecting the material with the appropriate thickness, first remove the impurities around the target material. The specific method is to paste double-sided yellow tape and blue tape on the glass slide in sequence, then clamp the glass slide on the transfer stage. Align the microscope with the impurities on the material and the position of the blue tape, lower the transfer stage to stick off the impurities, and repeat this step multiple times until it does not affect the subsequent process of the target material. After finishing the previous step, the required FeIn 2 Se 4 material is obtained. Transfer the obtained material to the substrate silicon wafer. The specific steps are as follows: Place the PDMS with the target material on the glass slide and clamp it on the transfer stage. Align it with the corresponding position of the silicon wafer under the microscope and slowly lower it to transfer the material to the silicon wafer. Pay attention to the lowering speed in this step. If the speed is too fast, the material and the substrate will not be well bonded and contacted, and bubbles will be generated at the interface between the material and the substrate, affecting the performance of the device.
[0033] After the previous preparation steps are completed, the next step is to fabricate the electrode 4 part. The fabrication of the electrode 4 pattern can be selected by photolithography or electron beam exposure. The fabrication method of the electrode 4 can be selected from any one of magnetron sputtering, thermal evaporation coating, and electron beam evaporation coating. Here, photolithography and electron beam evaporation coating are selected for introduction. The preparatory work before photolithography requires spin-coating photoresist on the device surface first. The selection of photoresist is divided into positive photoresist and negative photoresist. After spin-coating the photoresist, the photolithography part can be started. First, find the target material on the sample, design the electrode 4 pattern on the target material, and perform exposure after designing the electrode 4 pattern according to the required pattern. After the electrode 4 pattern design is completed, fabricate the electrode 4. Use the electron beam evaporation coating technology to evaporate the adhesion layer (Ti) and the metal layer (Au) on the obtained sample in sequence. After the electrode 4 fabrication is completed, perform the degumming treatment on the device to remove the photoresist. Immerse the device in the degumming solution for 30 to 60 minutes to fully remove the residual glue, and the device fabrication process ends.
[0034] Next, characterize the obtained device. The schematic diagram of the optical microscope is as Figure 2 shown. Scan the obtained device under the atomic force microscope to obtain relevant thickness data. After processing, the thickness of FeIn 2 Se 4 is about 44 nm. The schematic diagram under the atomic force microscope is as Figure 4 shown. The obtained material thickness data is as Figure 5As shown, a Raman spectrometer was used to characterize the material. A 633 nm laser was used as the incident light to obtain the Raman characteristic spectrum of FeIn 2 Se 4 as shown. The characteristic peak of FeIn Figure 3 is 178 2 Se 4 .
[0035] The spectral response of the obtained photodetector was tested. The experimental steps are as follows: Place the device on the test platform, select lasers with different wavelengths, control the power of different lasers to be the same, control the variables, and let different lasers irradiate the device material position. The material absorbs light and converts the light signal into an electrical signal. Since FeIn 2 Se 4 is a ternary chalcogenide and belongs to a P-type semiconductor. The I ds -V g curve and I ds -V ds curve were obtained as shown in Figure 6 and 7 respectively. The FeIn 2 Se 4 photodetector was successively tested with incident light of 405 nm, 473 nm, 515 nm, and 638 nm, and the time response curves at different wavelengths were obtained as shown in Figure 8 . At the same time, as shown in Figure 9 , after the FeIn 2 Se 4 photodetector was tested with 638 nm incident light for a long time, the consistency of its fluctuations was strong. Therefore, the FeIn 2 Se 4 photodetector has stability during long-term operation.
[0036] Next, the nonlinear characteristics of the device were tested. The Raman spectroscopy test platform was also used. Since the characteristic peak intensity of GeSe needed to be analyzed, appropriate wavelengths and laser powers were selected. The device was fixed and the angle of the incident light was changed. The intensities of the two characteristic peaks of FeIn 2 Se 4 also changed. The ratio of the two characteristic peaks was recorded and calculated. When the ratio was the largest, the recorded angles were 15°, 75°, 135°, 195°, 255°, and 315°. When the ratio was the smallest, the corresponding angles were 45°, 105°, 165°, 225°, 285°, and 345°. By changing the angle of the incident light, the ratio of the intensities of characteristic peaks B 3g and A g2 changed accordingly. The measured Raman spectrum changes and data related to the characteristic peak intensities are shown in Figure 10 and Figure 11As shown by the above data, it illustrates FeIn 2 Se 4 has anisotropy and has a period of 60°, which matches the triple symmetry of FeIn 2 Se 4 .
[0037] The method of the present invention designs the relevant performance of the photodetector based on FeIn 2 Se 4 . From the preparation to the characterization of the process flow, compared with other photodetectors, the prominent feature of the present invention is that it realizes the response to light rays with multiple polarization directions, which enables this material to be applied to other aspects, such as information recognition, polarized light detection and imaging, optical communication, etc.
[0038] The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention belongs, without departing from the concept of the present invention, several simple deductions or substitutions can be made, and all should be regarded as belonging to the protection scope of the present invention.
Claims
1. A FeIn2Se4 photodetector, characterized in that: It includes a substrate, a dielectric layer, a light absorption and transmission layer, an electrode, an adhesive layer, and a metal layer. The dielectric layer covers the substrate, the dielectric layer covers the light absorption and transmission layer, the electrode forms an ohmic contact with the light absorption and transmission layer, the electrode is plated with an adhesive layer and a metal layer in sequence, the light absorption and transmission layer is a FeIn2Se4 material, the light absorption and transmission layer is formed by growing the FeIn2Se4 material on the dielectric layer or by mechanically stripping the FeIn2Se4 material and then covering the dielectric layer, and the electrode is formed by laser direct writing on the FeIn2Se4 material through a micro-nano mask.
2. The FeIn2Se4 photodetector according to claim 1, characterized in that: The material of the substrate is one of Si, SiC and SOI.
3. The FeIn2Se4 photodetector according to claim 1, characterized in that: The material of the dielectric layer is one of SiO2, Al2O3, and HfO2.
4. The FeIn2Se4 photodetector according to claim 1, characterized in that: The thickness of the FeIn2Se4 material is 40nm~50nm.
5. The FeIn2Se4 photodetector according to claim 1, characterized in that: The bonding layer material is one of Cr, Ti and Pd.
6. The FeIn2Se4 photodetector according to claim 1, characterized in that: The material of the metal layer is one of Au, Ag, Pt and Ag.
7. The FeIn2Se4 photodetector according to claim 1, characterized in that: The dielectric layer is covered on the substrate by a growth method of atomic layer deposition.
8. The FeIn2Se4 photodetector according to claim 1, characterized in that: The bonding layer and the metal layer are plated on the electrode by one of magnetron sputtering, thermal evaporation coating and electron beam evaporation coating.
9. The FeIn2Se4 photodetector according to claim 1, characterized in that: The growth method of the FeIn2Se4 material on the dielectric layer includes one of a physical vapor deposition method, a chemical vapor transport method, and a vertical Bridgman method.
10. The FeIn2Se4 photodetector according to claim 1, characterized in that: The electrode is formed on the FeIn2Se4 material by laser direct writing, including laser etching by a photolithography machine or electron beam exposure.