Light emitting diode, manufacturing method thereof and light emitting device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a semiconductor laminated layer, a first electrode, a second electrode, an insulating layer, a first bonding pad and a second bonding pad. The first electrode comprises a first contact electrode, a first intermediate electrode and a first connection electrode; the second electrode includes a second contact electrode and a second connection electrode. The first contact electrode is arranged on the semiconductor lamination layer and is electrically connected with the first semiconductor layer; the second contact electrode is arranged on the semiconductor lamination layer and is electrically connected with the second semiconductor layer; the first intermediate electrode wraps the first contact electrode; the first connecting electrode is connected with the first intermediate electrode; the second connection electrode is connected with the second contact electrode. According to the invention, by adding the first intermediate electrode and coating the first contact electrode, the formation of a high-resistance interface can be effectively inhibited, so that the problem of high resistance of the N-side electrode is solved, and the brightness and aging stability of the light-emitting diode are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and particularly relates to a light-emitting diode, a manufacturing method thereof, and a light-emitting device. Background Art

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element, usually made of semiconductors such as GaN, GaAs, GaP, GaAsP, etc. Its core is a PN junction with light-emitting characteristics. Due to its advantages of high luminous intensity, high efficiency, small size, long service life, etc., it is widely used in fields such as lighting, monitoring and command, high-definition broadcast, high-end cinema, office display, conference interaction, virtual reality, etc.

[0003] An ultraviolet light-emitting diode (UV LED) is a solid-state semiconductor device that can directly convert electrical energy into ultraviolet light. In recent years, the great application value of ultraviolet light LEDs, especially deep ultraviolet light LEDs, has attracted great attention and become a new research hotspot.

[0004] In the current LED process flow, the N-type contact electrode for ohmic contact on the N side usually contains multiple metal elements such as Al. And when forming the N-type contact electrode, especially for ultraviolet LEDs, in order to form good ohmic contact and prevent voltage increase, a high-temperature fusion process is required. In this process, the Al element is easy to migrate to the surface of the N-type contact electrode; in the subsequent fusion process of the Ni alloy thin film or ITO thin film, it needs to be carried out in a thermal oxygen environment, and the thermal oxygen is easy to form a high-resistance channel with the Al element on the surface of the N-type contact electrode, which has an important impact on the conduction and injection of current. Therefore, how to solve this problem has become one of the difficult points that need to be solved urgently by those skilled in the art. Summary of the Invention

[0005] The present invention provides a light-emitting diode, which includes: A semiconductor stack, including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; A first electrode, including a first contact electrode, a first intermediate electrode, and a first connection electrode; a second electrode, including a second contact electrode and a second connection electrode; The first contact electrode is disposed on the semiconductor stack and electrically connected to the first semiconductor layer; The second contact electrode is disposed on the semiconductor stack and electrically connected to the second semiconductor layer; The first intermediate electrode covers the first contact electrode; The first connection electrode connects the first intermediate electrode; The second connection electrode connects the second contact electrode; An insulating layer covering the semiconductor stack, the first electrode, and the second electrode, and having a first opening and a second opening; A first pad disposed on the insulating layer and electrically connected to the first electrode through the first opening; A second pad disposed on the insulating layer and electrically connected to the second electrode through the second opening.

[0006] The present invention also provides a method for manufacturing a light-emitting diode, which includes the following steps: Providing a substrate; Growing a semiconductor stack formed by sequentially stacking a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on the substrate; Removing a part of the second semiconductor layer and the light-emitting layer of the semiconductor stack until the first semiconductor layer is exposed, thereby forming one or more mesa structures; Forming a first contact electrode on the first semiconductor layer and performing high-temperature fusion so that the first contact electrode forms an alloy structure; Forming a first intermediate electrode on the first contact electrode, the first intermediate electrode covering the first contact electrode; Forming a second contact electrode on the second semiconductor layer and performing fusion in a thermal oxidation environment; Forming a first connection electrode and a second connection electrode on the first intermediate electrode and the second contact electrode respectively, thereby forming a first electrode and a second electrode; Forming an insulating layer to insulatively cover the semiconductor stack, the first electrode, and the second electrode, and forming a first opening and a second opening in the insulating layer; Forming a first pad and a second pad on the insulating layer, the first pad being electrically connected to the first electrode through the first opening, and the second pad being electrically connected to the second electrode through the second opening.

[0007] The present invention also provides a light-emitting device that uses the light-emitting diode provided in any one of the above embodiments.

[0008] By adding a first intermediate electrode and arranging it to cover the first contact electrode in an alloy structure state, the present invention can effectively inhibit the formation of a high-resistance interface, thereby solving the problem of high resistance of the N-side electrode, and further improving the brightness and aging stability of the light-emitting diode.

[0009] Other features and beneficial effects of the present invention will be described in the subsequent specification, and some of the technical features and beneficial effects can be obviously obtained from the specification, or understood by implementing the present invention. Description of the Drawings

[0010] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required in the description of the embodiments or the prior art. Obviously, some of the drawings in the following description are embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0011] Figure 1 is a schematic structural diagram of a prior art light-emitting diode; Figure 2 is a schematic diagram of the formation of an Al-O high-resistance channel in a prior art light-emitting diode in a thermal oxygen environment; Figure 3 is a top view schematic diagram of a light-emitting diode provided by the first embodiment of the present invention; Figure 4 is along Figure 3 the cut line A-A for cross-sectional view; Figure 5 is a schematic diagram of the light-emitting diode provided by the present invention in a thermal oxygen environment; Figure 6 is a schematic structural diagram of the first intermediate electrode; Figure 7 is a top view schematic diagram of another light-emitting diode provided by the first embodiment of the present invention; Figure 8 is along Figure 7 the cut line A-A for cross-sectional view; Figures 9 to 15 is a schematic structural diagram of the light-emitting diode in each stage during the manufacturing process according to the first embodiment of the present invention; Figure 16 is a top view schematic diagram of a light-emitting diode provided by the second embodiment of the present invention; Figure 17 is along Figure 16 the cut line A-A for cross-sectional view; Figure 18 is a top view schematic diagram of a light-emitting diode provided by the third embodiment of the present invention; Figure 19 is along Figure 18 the cut line A-A for cross-sectional view; Figure 20 is a top view schematic diagram of a light-emitting diode provided by the fourth embodiment of the present invention; Figure 21 is along Figure 20 the cut line A-A for cross-sectional view.

[0012] Reference numerals: 10 - Substrate; 12 - Semiconductor stack; 123 - First semiconductor layer; 124 - Light-emitting layer; 125 - Second semiconductor layer; 21 - First electrode; 211 - First contact electrode; 210 - First intermediate electrode; 212 - First connection electrode; 22 - Second electrode; 221 - Second contact electrode; 222 - Second connection electrode; 31 - First pad; 32 - Second pad; 14 - Insulating layer; 141 - First opening; 142 - Second opening; 16 - Groove; 2101 - Adhesion layer; 2102 - Reflective layer; 2103 - Protective layer. Detailed implementation manners

[0013] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. The technical features designed in different implementation manners of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0014] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more. In addition, the term "comprising" and any deformation thereof means "at least including".

[0015] Please refer to Figure 1 、 Figure 2 , Figure 1 which is a schematic structural diagram of a light-emitting diode in the prior art. Figure 2It is a schematic diagram of the formation of an Al-O high-resistance channel in an existing technology light-emitting diode under a thermal oxygen environment. Among them, the first electrode 21 includes a first contact electrode 211 and a first connection electrode 212, and the second electrode 22 includes a second contact electrode 221 and a second connection electrode 222. The first contact electrode 211 usually contains various metal elements such as Al. When forming the first contact electrode 211, especially in an ultraviolet light-emitting diode, in order to form a good ohmic contact and prevent the increase of voltage, a high-temperature fusion process is required, such as Figure 2 As shown, due to the low density of the Al element in this process, in a high-temperature environment, it is easy to migrate upward to the surface of the first contact electrode 211. Subsequently, in the thermal oxygen environment during the fusion process of forming the second contact electrode 221, it is inevitable that the Al element reacts with the thermal oxygen to form a high-resistance channel. This Al-O high-resistance channel has many adverse effects on the conduction and injection of current. For example: 1. High-impedance characteristic: The high-resistance characteristic of Al 2 O 3 easily leads to the formation of a large potential barrier in the LED, thereby restricting the current injection efficiency, and further reducing the response speed of the LED during switching and dimming; 2. Interface state: The interface between Al 2 O 3 and the active region of the LED is prone to defects or imperfect interface states, which will cause uneven current distribution at the interface, and further affect the light output and efficiency of the LED; 3. Carrier diffusion: Due to the poor conductivity of Al 2 O 3 , the diffusion of carriers in the LED is restricted, resulting in a decrease in the recombination efficiency of electrons and holes, and further affecting photon emission; 4. Thermal management problem: During high-power operation, Al 2 O 3 easily causes heat to be difficult to dissipate, resulting in overheating and efficiency decline of the LED; 5. Uneven electric field distribution: Due to the relatively high dielectric constant of Al 2 O 3 , its presence easily causes the electric field to be unevenly distributed inside the LED, thereby affecting the carrier injection method.

[0016] In addition, the epitaxial AlGaN structure of the ultraviolet light-emitting diode is a ternary crystal material, and there is a problem of inconsistent crystal orientations during the growth process, and it is difficult to control the defects and impurities at the grain boundaries. Therefore, it is necessary to provide a technical solution that can suppress the formation of a high-resistance interface on the N side to solve the above technical problems.

[0017] The present invention provides a light-emitting diode, which includes: a semiconductor stack including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; a first electrode including a first contact electrode, a first intermediate electrode, and a first connection electrode; a second electrode including a second contact electrode and a second connection electrode; the first contact electrode is disposed on the semiconductor stack and electrically connected to the first semiconductor layer; the second contact electrode is disposed on the semiconductor stack and electrically connected to the second semiconductor layer; the first intermediate electrode covers the first contact electrode; the first connection electrode connects the first intermediate electrode; the second connection electrode connects the second contact electrode; an insulating layer covering the semiconductor stack, the first electrode, and the second electrode, and having a first opening and a second opening; a first pad disposed on the insulating layer and electrically connected to the first electrode through the first opening; a second pad disposed on the insulating layer and electrically connected to the second electrode through the second opening. By adding the first intermediate electrode and setting it to cover the first contact electrode in an alloy structure state, the present invention can effectively inhibit the formation of a high-resistance interface, thereby solving the problem of too high resistance of the N-side electrode, and further improving the brightness and aging stability of the light-emitting diode.

[0018] In some embodiments, the first contact electrode is an Al-containing alloy structure. This can improve the ohmic contact between the first contact electrode and the first semiconductor layer, thereby reducing the resistance of the device.

[0019] In some embodiments, the second contact electrode is an oxide transparent conductive material or a Ni alloy structure. The second contact electrode can serve as a current spreading layer to improve the lateral current spreading ability inside the chip.

[0020] In some embodiments, the first connection electrode and the second connection electrode are multi-layer metal structures, and the materials of the first connection electrode and the second connection electrode are the same.

[0021] In some embodiments, the surface layer material of the first connection electrode and the second connection electrode in contact with the insulating layer is selected from at least one of the group consisting of Cr, Ni, and Ti. On the one hand, the surface layer material can increase the adhesion between the connection electrode and the insulating layer as an adhesion layer. On the other hand, when the thickness of the surface layer material is large enough, it can also play a certain role in blocking metal interdiffusion.

[0022] In some embodiments, the first intermediate electrode is a multi-layer metal structure, and the first intermediate electrode includes an adhesion layer, a reflective layer, and a protective layer stacked in sequence on the first contact electrode.

[0023] In some embodiments, the material of the adhesion layer is selected from at least one of the group consisting of Cr, Ni, and Ti.

[0024] In some embodiments, the material of the reflective layer is selected from at least one of the group consisting of Pt, Pa, or single or multiple pairs of combinations such as AlTi, AlCr, and AlNi.

[0025] In some embodiments, the material of the protective layer is selected from at least one of the group consisting of Au, Rh, Pt, Ru, Pd, and Ir. Using a metal with high stability as the protective layer can more effectively block the upward migration of Al elements to contact with thermal oxygen to form a high-resistance oxide layer, preventing the formation of a high-resistance interface.

[0026] In some embodiments, the thickness range of the protective layer is 500 to 30,000 angstroms. Controlling the thickness of the protective layer within a suitable range can not only ensure its protective effect but also avoid an overly large width of the first intermediate electrode, which may affect the effective light-emitting area of the light-emitting diode and reduce the light-emitting efficiency.

[0027] In some embodiments, the thickness of the protective layer covering the top surface of the reflective layer is greater than the thickness of the protective layer covering the side surface of the reflective layer. On the one hand, since the area of the front surface of the first electrode is much larger than that of the side surface, and Al generally diffuses thermally upward in a high-temperature environment, by setting a greater thickness of the protective layer covering the top surface of the reflective layer, the upward-moving Al elements can be better isolated from oxygen, thus playing a better protective role. On the other hand, if the thickness of the protective layer covering the side surface of the reflective layer is too large, it will cause the side wall of the first intermediate electrode to be too thick, resulting in an overall increase in the width of the first electrode. Especially when applied to small-sized light-emitting diodes, it will affect their effective light-emitting area.

[0028] In some embodiments, the thickness range of the protective layer covering the top surface of the reflective layer is 1000 to 30,000 angstroms, and the thickness range of the protective layer covering the side surface of the reflective layer is 500 to 30,000 angstroms. Controlling the thickness of the protective layer covering the top surface and the side surface of the reflective layer within a suitable range can ensure its protective effect and avoid affecting the light-emitting efficiency.

[0029] In some embodiments, the thickness range of the first intermediate electrode is 1000 to 30,000 angstroms. Controlling the thickness of the first intermediate electrode within a suitable range can ensure its protective effect while avoiding affecting the light-emitting area of the light-emitting diode and reducing the light-emitting efficiency.

[0030] In some embodiments, the edge of the first contact electrode is located inside the edge of the first intermediate electrode, and there is a certain distance between them, and the range of this distance is not less than 1 μm. By covering the first contact electrode in the alloy structure state with the first intermediate electrode and having a certain distance, the coating effect can be more effectively ensured, thereby suppressing the formation of a high-resistance interface, solving the problem of high resistance of the N-side electrode, and then improving the brightness and aging stability of the light-emitting diode.

[0031] In some embodiments, there is a certain spacing between the edge of the first intermediate electrode and the edge of the first connecting electrode, and the range of this spacing is not greater than 20 μm. The first connecting electrode may cover the first intermediate electrode or may not completely cover the first intermediate electrode. When the first connecting electrode covers the first intermediate electrode with a certain spacing, the covering property can be more effectively ensured, thereby increasing the adhesion between the first electrode and the insulating layer, which is beneficial to improving the reliability of the light-emitting diode. When the first connecting electrode does not completely cover the first intermediate electrode, for example, the first connecting electrode only covers the top surface of the first intermediate electrode, more width design margins can be reserved for the first contact electrode and / or the first intermediate electrode: reserving more width design margins for the first contact electrode can ensure sufficient voltage; reserving more width design margins for the first intermediate electrode can, on the one hand, improve the covering effect of the first intermediate electrode on the first contact electrode, thereby more effectively suppressing the formation of a high-resistance interface, and on the other hand, can also play a certain role in blocking metal interdiffusion; in addition, it can also avoid expanding the overall width of the first electrode, especially when applied to small-sized light-emitting diodes, to avoid affecting the effective light-emitting area of the light-emitting diode.

[0032] In some embodiments, the edge of the first intermediate electrode overlaps with the edge of the first connecting electrode. On the one hand, it can ensure the adhesion between the first electrode and the insulating layer, and on the other hand, it can also ensure the width design margins of the first contact electrode and / or the first intermediate electrode, and at the same time, it can avoid expanding the overall width of the first electrode.

[0033] In some embodiments, the light-emitting diode is an ultraviolet light-emitting diode.

[0034] The present invention also provides a manufacturing method of a light-emitting diode, which includes the following steps: Provide a substrate; Grow a semiconductor stack formed by sequentially stacking a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on the substrate; Remove part of the second semiconductor layer and the light-emitting layer of the semiconductor stack until the first semiconductor layer is exposed, thereby forming one or more mesa structures; Form a first contact electrode on the first semiconductor layer and perform high-temperature fusion so that the first contact electrode forms an alloy structure; Form a first intermediate electrode on the first contact electrode, and the first intermediate electrode covers the first contact electrode; Form a second contact electrode on the second semiconductor layer and perform fusion in a thermal oxidation environment; Form a first connecting electrode and a second connecting electrode on the first intermediate electrode and the second contact electrode respectively, thereby forming a first electrode and a second electrode; An insulating layer is formed, and the insulation covers the semiconductor stack, the first electrode, and the second electrode, and a first opening and a second opening are formed in the insulating layer; A first pad and a second pad are formed on the insulating layer. The first pad is electrically connected to the first electrode through the first opening, and the second pad is electrically connected to the second electrode through the second opening.

[0035] In the present invention, after the first contact electrode is formed, a first intermediate electrode covering the first contact electrode is first formed to protect the first contact electrode, and then the second contact electrode is formed. Thereby, it is possible to avoid Al in the first contact electrode in the alloy structure state from migrating to the electrode surface to form a high-resistance channel with thermal oxygen, thereby solving the problem of too high resistance of the N-side electrode, and further improving the brightness and aging stability of the light-emitting diode.

[0036] The present invention also provides a light-emitting device that employs the light-emitting diode provided in any of the above embodiments.

[0037] Hereinafter, in conjunction with the accompanying drawings in the embodiments of the present invention, the technical solutions of the present invention will be clearly and completely described through various specific embodiments. Embodiment 1

[0038] Please refer to Figure 3 、 Figure 4 , Figure 3 FIG. is a top view schematic diagram of a light-emitting diode provided by the first embodiment of the present invention, Figure 4 FIG. is a cross-sectional schematic diagram taken along the cut line A-A of Figure 3 . To achieve at least one of the above advantages or other advantages, an embodiment of the present invention provides a light-emitting diode, which may at least include a semiconductor stack 12, a first electrode 21, a second electrode 22, an insulating layer 14, a first pad 31, and a second pad 32.

[0039] The semiconductor stack 12 may be disposed on the substrate 10. The substrate 10 may be an insulating substrate. Preferably, the substrate 10 may be made of a transparent material or a translucent material. In the illustrated embodiment, the substrate 10 is a sapphire substrate. In some embodiments, the substrate 10 may be a patterned sapphire substrate, but the present invention is not limited thereto. The substrate 10 may also be made of a conductive material or a semiconductor material. For example: the material of the substrate 10 may include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.

[0040] The semiconductor stack 12 includes a first semiconductor layer 123, a light-emitting layer 124, and a second semiconductor layer 125 that are stacked in sequence. That is, the light-emitting layer 124 is located between the first semiconductor layer 123 and the second semiconductor layer 125. The first semiconductor layer 123 may be an N-type layer, and correspondingly, the second semiconductor layer 125 is a P-type layer, and vice versa is also feasible. In the embodiment of the present invention, the first semiconductor layer 123 is an N-type layer and the second semiconductor layer 125 is a P-type layer as an example. Under the action of a power supply, the first semiconductor layer 123 can provide electrons to the light-emitting layer 124 by doping with n-type impurities. The n-type impurities may include one or a combination of Si, Ge, Sn, Se, and Te; the second semiconductor layer 125 can provide holes to the light-emitting layer 124 by doping with P-type impurities. The P-type impurities may include one or a combination of Mg, Zn, Ca, Sr, and Ba.

[0041] The light-emitting layer 124 may be a quantum well structure (Quantum Well, abbreviated as QW). In some embodiments, the light-emitting layer 124 may also be a multiple quantum well structure (Multiple Quantum Well, abbreviated as MQW), where the multiple quantum well structure includes a plurality of quantum well layers (Well) and a plurality of quantum barrier layers (Barrier) alternately arranged in a repeated manner. For example, it may be a multi-quantum well structure of GaN / AlGaN, GaN / InGaN, AlGaN / AlGaN, AlGaN / InGaN, or InAlGaN / InAlGaN. In addition, the composition and thickness of the well layer in the light-emitting layer 124 determine the wavelength of the generated light. In order to improve the light-emitting efficiency of the light-emitting layer 124, it can be achieved by changing the depth of the quantum well, the number of pairs of quantum wells and quantum barriers, the thickness, and / or other characteristics in the light-emitting layer 124. In the embodiment of the present invention, the light-emitting layer 124 may be a multi-quantum well structure of AlGaN / AlGaN, and the light emitted by it is in the ultraviolet band, and the light-emitting diode is an ultraviolet light-emitting diode.

[0042] Please refer to Figure 3 , looking down at the semiconductor stack 12 from above the light-emitting diode, the shapes of the second semiconductor layer 125 and the light-emitting layer 124 are in an "E" shape, and the first electrode 21 surrounds the light-emitting layer 124. The first electrode 21 includes a first contact electrode 211, a first intermediate electrode 210, and a first connection electrode 212.

[0043] Please refer to Figure 4, the first contact electrode 211 is disposed on the semiconductor stack 12 and electrically connected to the first semiconductor layer 123. Since the first semiconductor layer 123 has a high Al component, in order to form a good ohmic contact with the first semiconductor layer 123 and reduce the resistance of the device, the first contact electrode 211 is an Al-containing alloy layer. Preferably, in some embodiments, the material of the first contact electrode 211 includes an alloy formed by fusing at least one of Ti, Cr, and Ni with Al. For example, it can be a Ti-Al-Ti-Pt alloy, a Ti-Al-Au alloy, a Ti-Al-Ni-Au alloy, a Cr-Al-Ti-Au alloy, a Ti-Al-Au-Pt alloy, a Ti-Al-Ti-Ni-Pt alloy, a Ti-Al-Ni-Au alloy, a Cr-Al-Ti-Ni-Au alloy, a Ti-Al-Au-Ni-Pt alloy, a VAlVAu alloy, etc.

[0044] The first intermediate electrode 210 is disposed on the first contact electrode 211 and covers the first contact electrode 211. Specifically, the first intermediate electrode 210 completely covers the top surface and the side surface of the first contact electrode 211. Please refer to Figure 5 , Figure 5It is a schematic diagram of the light-emitting diode provided by the present invention under a thermal oxygen environment. Since the Al element in the first contact electrode 211 is prone to upward migration to the surface of the first contact electrode 211 after the high-temperature fusion process, the present invention completely coats the first contact electrode 211 in the alloy structure state with the first intermediate electrode 210 to prevent the Al element migrated to the surface of the first contact electrode 211 from reacting with the thermal oxygen required in the subsequent fusion process for forming the second contact electrode 221 to form a high-resistance channel, thereby effectively suppressing the formation of a high-resistance interface and solving the problem of high resistance of the N-side electrode, and further improving the brightness and aging stability of the light-emitting diode. In some embodiments, the edge of the first contact electrode 211 is located inside the edge of the first intermediate electrode 210, and there is a certain distance between the two. The range of this distance is not less than 1 μm. In some preferred embodiments, the distance range between the edge of the first contact electrode 211 and the edge of the first intermediate electrode 210 is 1 to 20 μm. More preferably, in some embodiments, the distance range between the two is 2 to 5 μm, such as 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, etc. By setting a certain distance between the edge of the first contact electrode 211 and the edge of the first intermediate electrode 210, the coating effect can be more effectively ensured, and the formation of a high-resistance interface can be further avoided. In some embodiments, the thickness range of the first intermediate electrode 210 is 1000 to 30000 angstroms. In some preferred embodiments, the thickness range of the first intermediate electrode 210 can be 1000 to 10000 angstroms. More preferably, in some embodiments, the thickness range of the first intermediate electrode 210 can be 1300 to 5000 angstroms, such as 1500 angstroms, 2000 angstroms, 2500 angstroms, 3000 angstroms, 3500 angstroms, 4000 angstroms, 4500 angstroms, etc. Controlling the thickness of the first intermediate electrode 210 within a suitable range can not only ensure its protection effect, but also avoid the width of the first intermediate electrode 210 from being too large, thus affecting the effective light-emitting area of the light-emitting diode and reducing the light-emitting efficiency.

[0045] Please refer to Figure 6 , Figure 6It is a schematic structural diagram of the first intermediate electrode 210. In some embodiments, the first intermediate electrode 210 is a multi-layer metal structure. The first intermediate electrode 210 includes an adhesion layer 2101, a reflective layer 2102, and a protective layer 2103 that are sequentially stacked on the first contact electrode 211. Among them, the adhesion layer 2101 is formed on the first contact electrode 211 and covers the top surface and side surfaces of the first contact electrode 211. The material of the adhesion layer 2101 is selected from at least one of the group consisting of Cr, Ni, and Ti; the reflective layer 2102 is formed on the adhesion layer 2101 and covers the top surface and side surfaces of the adhesion layer 2101. The material of the reflective layer 2102 is selected from at least one of the group consisting of Pt, Pa, or single or multi-pair combinations such as AlTi, AlCr, and AlNi; the protective layer 2103 is formed on the reflective layer 2102 and covers the top surface and side surfaces of the reflective layer 2102. The material of the protective layer 2103 is selected from at least one of the group consisting of Au, Rh, Pt, Ru, Pd, and Ir. Using a metal with high stability as the protective layer 2103 can more effectively block the upward migration of Al elements to contact with thermal oxygen to form a high-resistance oxide layer and prevent the formation of a high-resistance interface. In some embodiments, the first intermediate electrode 210 may only include the protective layer 2103, or the first intermediate electrode 210 may only include the adhesion layer 2101 and the protective layer 2103, so as to avoid the width of the first intermediate electrode 210 being too large, which affects the effective light-emitting area of the light-emitting diode and reduces the light-emitting efficiency. In the embodiments of the present invention, the thickness range of the protective layer 2103 is 500 - 30000 angstroms. In some preferred embodiments, the thickness range of the protective layer 2103 can be 500 - 10000 angstroms. Further, more preferably, in some embodiments, the thickness range of the protective layer 2103 can be 800 - 5000 angstroms, such as 1000 angstroms, 2000 angstroms, 3000 angstroms, 4000 angstroms, etc. By setting the protective layer 2103 with an appropriate thickness, both its protection effect can be ensured, and at the same time, the width of the first intermediate electrode 210 being too large to affect the light-emitting efficiency can be avoided. In the present invention, the thickness of the protective layer 2103 covering the top surface and side surfaces of the reflective layer 2102 can be the same or different.In some preferred embodiments, the thickness of the protective layer 2103 covering the top surface of the reflective layer 2102 can be greater than the thickness of the protective layer 2103 covering the side surface of the reflective layer 2102. The thickness range of the protective layer 2103 covering the top surface of the reflective layer 2102 is 1000 - 30000 angstroms, such as 1000 angstroms, 2000 angstroms, 3000 angstroms, 4000 angstroms, etc.; the thickness range of the protective layer 2103 covering the side surface of the reflective layer 2102 is 500 - 30000 angstroms, such as 500 angstroms, 1000 angstroms, 1500 angstroms, 2000 angstroms, etc. On the one hand, since the area of the front surface of the first electrode 21 is much larger than that of the side surface, and the thermal diffusion movement of Al in a high-temperature environment is generally upward, by setting a larger thickness of the protective layer 2103 covering the top surface of the reflective layer 2102, the upward-moving Al element can be better isolated from oxygen, thus playing a better protective role. On the other hand, if the thickness of the protective layer 2103 covering the side surface of the reflective layer 2102 is too large, it will cause the side wall of the first intermediate electrode 210 to be too thick, which will lead to an increase in the overall width of the first electrode 21. Especially when applied to small-sized light-emitting diodes, it will affect its effective light-emitting area. In short, by controlling the thickness of the protective layer 2103 covering the top surface and the side surface of the reflective layer 2102 within a suitable range, its protection effect can be ensured, and at the same time, the light-emitting efficiency can be prevented from being affected.

[0046] Please continue to refer to Figure 4, in this embodiment, the first connection electrode 212 is disposed on the first intermediate electrode 210 and covers the first intermediate electrode 210. Specifically, the first connection electrode 212 completely covers the top surface and the side surface of the first intermediate electrode 210, and the edge of the first intermediate electrode 210 is located inside the edge of the first connection electrode 212, and there is a certain distance between the two. The range of this distance is not greater than 20 μm. Preferably, in some embodiments, the distance between the edge of the first connection electrode 212 and the edge of the first intermediate electrode 210 ranges from 2 to 5 μm. For example, it can be 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, etc. In this embodiment, by setting the first connection electrode 212 to cover the first intermediate electrode 210 and having a certain distance between their edges, the covering property can be more effectively ensured, thereby increasing the adhesion between the first electrode 21 and the insulating layer 14, which is beneficial to improving the reliability of the light-emitting diode. In some embodiments, the first connection electrode 212 is a multi-layer metal structure, and the material of the first connection electrode 212 can be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al. Among them, the surface layer material in contact with the insulating layer 14 of the first connection electrode 212 is selected from at least one of the group consisting of Cr, Ni, and Ti. On the one hand, the surface layer material can be used as an adhesion layer to increase the adhesion between the first connection electrode 212 and the insulating layer 14, which is beneficial to improving the reliability of the light-emitting diode. On the other hand, when the thickness of the surface layer material is large enough, it can also prevent the metal in the first pad 31 from diffusing into the first connection electrode 212 and affecting the reliability of the light-emitting diode.

[0047] Please continue to refer to Figure 4, the second electrode 22 is disposed on the semiconductor stack 12, and the second electrode 22 includes a second contact electrode 221 and a second connection electrode 222. Among them, the second contact electrode 221 is disposed on the semiconductor stack 12 and electrically connected to the second semiconductor layer 125. The second contact electrode 221 can be made of a transparent conductive material or a metal material, and can be adaptively selected according to the doping condition of the surface layer of the second semiconductor layer 125 (such as the p-type GaN surface layer). In some embodiments, the second contact electrode 221 has a Ni alloy structure. For example, the second contact electrode 221 can be a metal alloy such as NiAu, NiAg, NiRh, AuNiAu, PdNiAu, NiPdAu, etc. In this embodiment, the second contact electrode 221 is preferably made of NiAu material, and its components include Ni, Au, and NiO. In some embodiments, the second contact electrode 221 is made of a transparent conductive material, and the material can include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO), or zinc oxide (ZnO). The embodiments of the present disclosure are not limited thereto.

[0048] In some embodiments, the second connection electrode 222 is disposed on the second contact electrode 221. In this embodiment, the second connection electrode 222 is disposed on the second contact electrode 221 and covers the second contact electrode 221. Specifically, the second connection electrode 222 completely covers the top surface and the side surface of the second contact electrode 221. In some embodiments, please refer to Figure 7 , Figure 8, the second connection electrode 222 may be disposed on the second contact electrode 221 and only cover a part of the top surface of the second contact electrode 221, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the second connection electrode 222 is also a multi-layer metal structure and has the same material as the first connection electrode 212. The material of the second connection electrode 222 may be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al. Preferably, the surface material of the second connection electrode 222 in contact with the insulating layer 14 is also selected from at least one of the group consisting of Cr, Ni, and Ti. The specific effects are the same as those of the first connection electrode 212 and will not be elaborated herein one by one.

[0049] The insulating layer 14 covers the semiconductor stack 12, the first electrode 21, and the second electrode 22. The insulating layer 14 has different functions according to the involved positions. For example, when the insulating layer 14 covers the sidewall of the semiconductor stack 12, it can be used to prevent the first semiconductor layer 123 and the second semiconductor layer 125 from being electrically connected due to the leakage of conductive materials, reducing the short-circuit abnormality of the light-emitting diode, but the embodiments of the present disclosure are not limited thereto. The material of the insulating layer 14 includes non-conductive materials. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silica gel. The dielectric material includes electrical insulating materials such as alumina, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 14 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof. The combination may be, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0050] The light-emitting diode further includes a first pad 31 and a second pad 32. The first pad 31 and the second pad 32 are disposed on the insulating layer 14. The insulating layer 14 has a first opening 141 and a second opening 142. The first pad 31 is connected to the first electrode 21 through the first opening 141, and the second pad 32 is connected to the second electrode 22 through the second opening 142. Specifically, the first pad 31 is connected to the first connection electrode 212 through the first opening 141, and the second pad 32 is connected to the second connection electrode 222 through the second opening 142. The first pad 31 and the second pad 32 may be metal pads and can be formed together using the same material in the same process, so they may have the same layer structure.

[0051] Please refer to Figures 9 to 15 , Figures 9 to 15 which is a schematic structural diagram of the light-emitting diode of the first embodiment at each stage during the manufacturing process.

[0052] First, refer to Figure 9, a semiconductor stack 12 including a first semiconductor layer 123, a light-emitting layer 124, and a second semiconductor layer 125 is formed on a substrate 10. Then, etching is performed from the second semiconductor layer 125 towards the first semiconductor layer 123 to remove a part of the second semiconductor layer 125 and the light-emitting layer 124 of the semiconductor stack 12 until the first semiconductor layer 123 is exposed, thereby forming one or more mesa structures.

[0053] Next, referring to Figure 10 , a first contact electrode 211 is formed on the first semiconductor layer 123, and in order to form a good ohmic contact and prevent voltage increase, a high-temperature fusion process needs to be performed on the first contact electrode 211, and the temperature range can be above 700 °C. Preferably, for example, between 700 °C and 1000 °C, so that the first contact electrode 211 forms an alloy structure.

[0054] Then, referring to Figure 11 , a first intermediate electrode 210 is formed on the first contact electrode 211, and the first intermediate electrode 210 covers the first contact electrode 211. Specifically, the first intermediate electrode 210 completely covers the top surface and the side surface of the first contact electrode 211, thereby avoiding the migration of Al elements in the first contact electrode 211 in the alloy structure to the electrode surface and reacting with oxygen in the subsequent thermal oxygen environment to form a high-resistance channel.

[0055] Then, referring to Figure 12 , a second contact electrode 221 is formed on the second semiconductor layer 125, and a fusion process is performed on the second contact electrode 221 in a thermal oxygen environment. The temperature range generally does not exceed 700 °C. Preferably, for example, between 400 °C and 700 °C. On the one hand, it can optimize and reduce the contact impedance of the second semiconductor layer 125, thereby reducing the voltage; on the other hand, it can improve the crystal structure, making the current injection more uniform, thereby enhancing the brightness.

[0056] Subsequently, referring to Figure 13 , a first connection electrode 212 and a second connection electrode 222 are respectively formed on the first intermediate electrode 210 and the second contact electrode 221, thereby forming a first electrode 21 and a second electrode 22.

[0057] Next, referring to Figure 14 , an insulating layer 14 is formed. The insulating layer 14 covers the semiconductor stack 12, the first electrode 21, and the second electrode 22. The insulating layer 14 is provided with a first opening 141 and a second opening 142. The first opening 141 and the second opening 142 are respectively used to expose the first electrode 21 and the second electrode 22 for facilitating the electrical setting of subsequent pads. The insulating layer 14 mainly plays a role in isolating electricity and protecting internal components.

[0058] Finally, referring to Figure 15, a first pad 31 and a second pad 32 are formed on the insulating layer 14. The first pad 31 is electrically connected to the first electrode 21 through the first opening 141, and the second pad 32 is electrically connected to the second electrode 22 through the second opening 142. Specifically, the first pad 31 is connected to the first connecting electrode 212 through the first opening 141, and the second pad 32 is connected to the second connecting electrode 222 through the second opening 142.

[0059] In the present invention, after forming the first contact electrode 211, the first intermediate electrode 210 covering the first contact electrode 211 is first formed to protect the first contact electrode 211, and then the second contact electrode 221 is formed through a thermal oxidation environment. Thereby, the Al in the first contact electrode 211 in the alloy structure state can be prevented from migrating out and reacting with oxygen, effectively suppressing the formation of a high-resistance interface, thus solving the problem of high resistance of the N-side electrode, and further improving the brightness and aging stability of the light-emitting diode. Embodiment 2

[0060] Please refer to Figure 16 、 Figure 17 , Figure 16 is a top view schematic diagram of the light-emitting diode provided by the second embodiment of the present invention. Figure 17 is along Figure 16Schematic cross-sectional view taken along the cutting line A-A. Compared with the light-emitting diode of the first embodiment of the present invention, the differences of the light-emitting diode of this second embodiment mainly lie in that: the first connecting electrode 212 is disposed on the first intermediate electrode 210 and the first connecting electrode 212 only covers the top surface of the first intermediate electrode 210. In this embodiment, the edge of the first connecting electrode 212 is located inside the edge of the first intermediate electrode 210, and there is a certain distance between the two. The range of this distance is not greater than 20 μm. Preferably, in some embodiments, the distance range between the edge of the first connecting electrode 212 and the edge of the first intermediate electrode 210 is 2-5 μm, for example, it can be 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, etc. Through this design, compared with the first embodiment, on the premise that the overall width of the first electrode 21 is the same, more width design margin can be reserved for the first contact electrode 211, more width design margin can be reserved for the first intermediate electrode 210, and more width design margin can be reserved for the first contact electrode 211 and the first intermediate electrode 210 at the same time. When more width design margin is reserved for the first contact electrode 211, the ohmic contact between the first contact electrode 211 and the first semiconductor layer 123 can be improved, thereby reducing the voltage; when more width design margin is reserved for the first intermediate electrode 210, on the one hand, the coating effect of the first intermediate electrode 210 on the first contact electrode 211 can be improved, so as to more effectively inhibit the formation of a high-resistance interface; on the other hand, it can also play a certain role in blocking metal interdiffusion. In addition, in order to prevent short circuit, generally, a certain distance range needs to be ensured between the first electrode 21 and the light-emitting area of the light-emitting diode. Since the first connecting electrode 212 does not cover the side surface of the first intermediate electrode 210, it is also possible to avoid expanding the overall width of the first electrode 21, avoid affecting the effective light-emitting area of the light-emitting diode, and ensure the light-emitting efficiency of the light-emitting diode, especially when applied to small-size light-emitting diodes. Embodiment 3

[0061] Please refer to Figure 18 、 Figure 19 , Figure 18 is a top view schematic diagram of the light-emitting diode provided by the third embodiment of the present invention, Figure 19 is along Figure 18Schematic cross-sectional view taken along the cutting line A-A. Compared with the light-emitting diode of the first embodiment of the present invention, the differences of the light-emitting diode of the third embodiment mainly lie in that: while the first connecting electrode 212 covers the top surface and the side surface of the first intermediate electrode 210, the edge of the first intermediate electrode 210 overlaps with the edge of the first connecting electrode 212. Through the design of covering the top surface and the side surface of the first intermediate electrode 210 by the first connecting electrode 212, the surface layer of the first electrode 21 in contact with the insulating layer 14 is still the first connecting electrode 212, which can ensure the adhesion between the first electrode 21 and the insulating layer 14 and is beneficial to improving the reliability of the light-emitting diode; the design of the edge of the first intermediate electrode 210 overlapping with the edge of the first connecting electrode 212 can also reserve more width design margins for the first contact electrode 211 and / or the first intermediate electrode 210, and at the same time avoid expanding the overall width of the first electrode 21. The corresponding technical effects have been described in detail in the second embodiment and will not be elaborated here one by one. Embodiment 4

[0062] Please refer to Figure 20 、 Figure 21 , Figure 20 is a top view schematic diagram of the light-emitting diode provided by the fourth embodiment of the present invention, Figure 21 is along Figure 20 Schematic cross-sectional view taken along the cutting line A-A. Compared with the light-emitting diode of the first embodiment of the present invention, the differences of the light-emitting diode of the fourth embodiment mainly lie in that: the light-emitting diode further includes a groove 16, and the groove 16 is formed on the inner and outer side walls of the first semiconductor layer 123. The groove 16 extends from the first semiconductor layer 123 towards the substrate 10, and can be extended downward by an appropriate distance from the upper surface of the first semiconductor layer 123 without penetrating to the upper surface of the substrate 10. The groove 16 can also be extended from the first semiconductor layer 123 to the upper surface of the substrate 10, that is, the groove 16 completely penetrates the first semiconductor layer 123. The first contact electrode 211 covers part of the side wall and the bottom of the groove 16, and covers part of the planar area of the first semiconductor layer 123 (such as the upper surface of the first semiconductor layer 123), and forms an ohmic contact with the first semiconductor layer 123. By providing the first contact electrode 211 to cover the side wall of the groove 16, the effect of current shunting and lateral injection into the first semiconductor layer 123 can be achieved, strengthening the lateral propagation of current in the first semiconductor layer 123 and reducing the operating voltage.

[0063] In addition, due to the waveguide effect, the light of the existing light-emitting diode will form oscillating reflections between the light-emitting layer 124 and the substrate 10, causing the light to be absorbed in the semiconductor layer. With the arrangement of the first contact electrode 211 extending deep into the groove 16 in the present invention, the waveguide effect is blocked at the groove 16, allowing the first contact electrode 211 to reflect more of the light emitted by the light-emitting layer 124 and reflecting more light to the outside, thereby improving the light extraction efficiency of the light-emitting diode. In some embodiments, the side wall of the groove 16 is inclined. Preferably, the inclination angle is less than or equal to 60°. More preferably, the range of the inclination angle is 25-40°. The side wall of the groove 16 can also be in the form of a stepped inclined shape, which can further increase the contact area between the first contact electrode 211 and the side wall of the groove 16 and improve the effect of current shunting and lateral injection into the first semiconductor layer 123. However, this patent is not limited thereto, and it can also be selected and set according to actual situations. In addition, in the accompanying drawing embodiments such as Figure 7 、 Figure 16 、 Figure 18 etc., corresponding grooves 16 can also be provided to strengthen the lateral propagation of current in the first semiconductor layer 123 and reduce the operating voltage.

[0064] The present invention also provides a light-emitting device using the light-emitting diode described in any of the above embodiments, which can effectively improve the performance of the light-emitting device.

[0065] In summary, the light-emitting diode provided by the present invention can effectively inhibit the formation of a high-resistance interface by adding a first intermediate electrode and arranging the first contact electrode in a coated alloy structure state, thereby solving the problem of high resistance of the N-side electrode and improving the brightness and aging stability of the light-emitting diode.

[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: A semiconductor stack, comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in sequence; The first electrode includes a first contact electrode, a first intermediate electrode and a first connecting electrode; the second electrode includes a second contact electrode and a second connecting electrode; The first contact electrode is disposed on the semiconductor stack and is electrically connected to the first semiconductor layer; The second contact electrode is disposed on the semiconductor stack and is electrically connected to the second semiconductor layer; The first intermediate electrode covers the first contact electrode; The first connecting electrode is connected to the first intermediate electrode; The second connecting electrode is connected to the second contact electrode; An insulating layer covering the semiconductor stack, the first electrode and the second electrode, the insulating layer having a first opening and a second opening; a first pad, disposed on the insulating layer and electrically connected to the first electrode through the first opening; The second pad is disposed on the insulating layer and electrically connected to the second electrode through the second opening.

2. The light emitting diode according to claim 1, characterized in that: The first contact electrode is an alloy structure containing Al.

3. The light emitting diode according to claim 1, characterized in that: The second contact electrode is an oxide transparent conductive material or a Ni alloy structure.

4. The light emitting diode according to claim 1, characterized in that: The first connection electrode and the second connection electrode are multi-layer metal structures, and the first connection electrode and the second connection electrode are made of the same material.

5. The light emitting diode according to claim 1, characterized in that: The surface material of the first connection electrode and the second connection electrode in contact with the insulating layer is at least one selected from the group consisting of Cr, Ni, and Ti.

6. The light emitting diode according to claim 1, characterized in that: The first intermediate electrode is a multi-layer metal structure, and the first intermediate electrode includes an adhesion layer, a reflection layer, and a protection layer sequentially stacked on the first contact electrode.

7. The light emitting diode according to claim 6, characterized in that: The material of the adhesion layer is at least one selected from the group consisting of Cr, Ni, and Ti.

8. The light emitting diode according to claim 6, characterized in that: The material of the reflective layer is selected from at least one of the group consisting of a single pair or multiple pairs of Pt, Pa, AlTi, AlCr, AlNi, etc.

9. The light emitting diode according to claim 6, characterized in that: The material of the protective layer is at least one selected from the group consisting of Au, Rh, Pt, Ru, Pd, and Ir.

10. The light emitting diode according to claim 6, characterized in that: The thickness of the protective layer ranges from 500 to 30,000 angstroms.

11. The light emitting diode according to claim 6, characterized in that: The thickness of the protective layer covering the top surface of the reflective layer is greater than the thickness of the protective layer covering the side surface of the reflective layer.

12. The light emitting diode according to claim 11, characterized in that: The thickness of the protective layer covering the top surface of the reflective layer is in the range of 1000 to 30000 angstroms, and the thickness of the protective layer covering the side surface of the reflective layer is in the range of 500 to 30000 angstroms.

13. The light emitting diode according to claim 1, characterized in that: The thickness of the first intermediate electrode is in the range of 1000 to 30000 angstroms.

14. The light emitting diode according to claim 1, characterized in that: The edge of the first contact electrode is located inside the edge of the first intermediate electrode, and there is a certain distance between the two, and the range of the distance is not less than 1 μm.

15. The light emitting diode according to claim 1, characterized in that: There is a certain distance between the edge of the first intermediate electrode and the edge of the first connecting electrode, and the range of the distance is not greater than 20 μm.

16. The light emitting diode according to claim 1, characterized in that: An edge of the first intermediate electrode overlaps an edge of the first connecting electrode.

17. The light emitting diode according to claim 1, characterized in that: The light emitting diode is an ultraviolet light emitting diode.

18. A method for manufacturing a light emitting diode, characterized in that: The following steps are involved: providing a substrate; Growing a semiconductor stack formed by sequentially stacking a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on the substrate; removing a portion of the second semiconductor layer and the light-emitting layer of the semiconductor stack until the first semiconductor layer is exposed, thereby forming one or more mesa structures; forming a first contact electrode on the first semiconductor layer, and performing high-temperature melting to form an alloy structure of the first contact electrode; forming a first intermediate electrode on the first contact electrode, wherein the first intermediate electrode covers the first contact electrode; forming a second contact electrode on the second semiconductor layer and fusing the second contact electrode in a thermal oxygen environment; forming a first connection electrode and a second connection electrode on the first intermediate electrode and the second contact electrode, respectively, thereby forming a first electrode and a second electrode; forming an insulating layer, the insulating layer covering the semiconductor stack, the first electrode and the second electrode, and forming a first opening and a second opening in the insulating layer; A first pad and a second pad are formed on the insulating layer, the first pad is electrically connected to the first electrode through the first opening, and the second pad is electrically connected to the second electrode through the second opening.

19. A light emitting device, characterized in that: The light emitting device adopts the light emitting diode according to any one of claims 1 to 17.

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