Light emitting diode and method of manufacturing the same and light emitting device

Abstract

The application relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a semiconductor stack, a first electrode, a second electrode, an insulating layer, a first pad and a second pad. The first electrode comprises a first contact electrode, a first intermediate electrode and a first connecting electrode; the second electrode comprises a second contact electrode and a second connecting electrode. The first contact electrode is arranged on the semiconductor stack and is electrically connected with a first semiconductor layer; the second contact electrode is arranged on the semiconductor stack and is electrically connected with a second semiconductor layer; the first intermediate electrode covers the first contact electrode; the first connecting electrode is connected with the first intermediate electrode; and the second connecting electrode is connected with the second contact electrode. By arranging the first intermediate electrode which covers the first contact electrode, the formation of a high-resistance interface can be effectively inhibited, thereby solving the problem of high resistance of the N-side electrode, and further improving the brightness and aging stability of the light-emitting diode.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode, its manufacturing method, and a light-emitting device. Background Technology

[0002] Light-emitting diodes (LEDs) are semiconductor light-emitting elements, typically made of semiconductors such as GaN, GaAs, GaP, and GaAsP. Their core is a PN junction with light-emitting characteristics. Due to their advantages such as high luminous intensity, high efficiency, small size, and long lifespan, they are widely used in lighting, monitoring and command, high-definition broadcasting, high-end cinemas, office displays, conference interaction, virtual reality, and other fields.

[0003] An ultraviolet (UV) light-emitting diode (LED) is a solid-state semiconductor device that can directly convert electrical energy into ultraviolet light. In recent years, the enormous application value of UV LEDs, especially deep ultraviolet LEDs, has attracted much attention and become a new research hotspot.

[0004] In current LED manufacturing processes, the N-side N-type contact electrode used for ohmic contact typically contains multiple metallic elements such as Al. Furthermore, during the formation of the N-type contact electrode, especially in UV LEDs, a high-temperature fusion process is required to achieve good ohmic contact and prevent voltage rise. During this process, Al elements easily migrate to the surface of the N-type contact electrode. Subsequent fusion processes for Ni alloy thin films or ITO thin films need to be carried out in a thermo-oxidative environment. The thermo-oxidative environment and the Al elements on the N-type contact electrode surface easily form high-resistance channels, which significantly affect current conduction and injection. Therefore, solving this problem has become one of the pressing challenges for those skilled in the art. Summary of the Invention

[0005] This invention provides a light-emitting diode, comprising:

[0006] A semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially.

[0007] The first electrode includes a first contact electrode, a first intermediate electrode, and a first connecting electrode; the second electrode includes a second contact electrode and a second connecting electrode.

[0008] The first contact electrode is disposed on the semiconductor stack and electrically connected to the first semiconductor layer;

[0009] The second contact electrode is disposed on the semiconductor stack and electrically connected to the second semiconductor layer;

[0010] The first intermediate electrode covers the first contact electrode;

[0011] The first connecting electrode is connected to the first intermediate electrode;

[0012] The second connecting electrode is connected to the second contact electrode;

[0013] An insulating layer covers the semiconductor stack, the first electrode, and the second electrode, and has a first opening and a second opening;

[0014] The first pad is disposed on the insulating layer and electrically connected to the first electrode through the first opening;

[0015] The second pad is disposed on the insulating layer and electrically connected to the second electrode through the second opening.

[0016] The present invention also provides a method for manufacturing a light-emitting diode, which includes the following steps:

[0017] Provide a substrate;

[0018] A semiconductor stack consisting of a first semiconductor layer, a light-emitting layer, and a second semiconductor layer is grown on a substrate.

[0019] Part of the second semiconductor layer and the light-emitting layer of the semiconductor stack are removed until the first semiconductor layer is exposed, thereby forming one or more mesa structures;

[0020] A first contact electrode is formed on the first semiconductor layer and then fused at high temperature to form an alloy structure for the first contact electrode.

[0021] A first intermediate electrode is formed on the first contact electrode, and the first intermediate electrode covers the first contact electrode.

[0022] A second contact electrode is formed on the second semiconductor layer and fused together in a hot and oxygen environment;

[0023] A first connecting electrode and a second connecting electrode are formed on the first intermediate electrode and the second contact electrode, respectively, thereby forming a first electrode and a second electrode.

[0024] An insulating layer is formed to insulatingly cover the semiconductor stack, the first electrode, and the second electrode, and a first opening and a second opening are formed in the insulating layer;

[0025] A first pad and a second pad are formed on an insulating layer. The first pad is electrically connected to the first electrode through a first opening, and the second pad is electrically connected to the second electrode through a second opening.

[0026] The present invention also provides a light-emitting device, which employs the light-emitting diode provided in any of the above embodiments.

[0027] By adding a first intermediate electrode and setting a first contact electrode in an alloy-coated state, the present invention can effectively suppress the formation of a high-resistivity interface, thereby solving the problem of high resistance of the N-side electrode and improving the brightness and aging stability of the light-emitting diode.

[0028] Other features and advantages of the present invention will be set forth in the following description, and some of the technical features and advantages may be apparent from the description or learned by practicing the invention. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, some of the drawings in the following description are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of the structure of a light-emitting diode (LED) in the prior art;

[0031] Figure 2 This is a schematic diagram of the formation of an Al-O high-resistivity channel in a thermo-oxidative environment using existing light-emitting diodes;

[0032] Figure 3 This is a top view schematic diagram of the light-emitting diode provided in the first embodiment of the present invention;

[0033] Figure 4 It is along Figure 3 A schematic diagram of the cross section cut by the intercept line AA;

[0034] Figure 5 This is a schematic diagram of the light-emitting diode provided by the present invention in a hot and oxygen-rich environment;

[0035] Figure 6 This is a schematic diagram of the structure of the first intermediate electrode;

[0036] Figure 7 This is a top view schematic diagram of another light-emitting diode provided in the first embodiment of the present invention;

[0037] Figure 8 It is along Figure 7 A schematic diagram of the cross section cut by the intercept line AA;

[0038] Figures 9 to 15 This is a schematic diagram of the structure of the light-emitting diode of the first embodiment of the present invention at each stage of the manufacturing process;

[0039] Figure 16 This is a top view schematic diagram of the light-emitting diode provided in the second embodiment of the present invention;

[0040] Figure 17 It is along Figure 16 A schematic diagram of the cross section cut by the intercept line AA;

[0041] Figure 18 This is a top view schematic diagram of the light-emitting diode provided in the third embodiment of the present invention;

[0042] Figure 19 It is along Figure 18 A schematic diagram of the cross section cut by the intercept line AA;

[0043] Figure 20 This is a top view schematic diagram of the light-emitting diode provided in the fourth embodiment of the present invention;

[0044] Figure 21 It is along Figure 20 A schematic diagram of the cross section cut by the intercept line AA.

[0045] Figure label:

[0046] 10-Substrate; 12-Semiconductor stack; 123-First semiconductor layer; 124-Light-emitting layer; 125-Second semiconductor layer; 21-First electrode; 211-First contact electrode; 210-First intermediate electrode; 212-First connecting electrode; 22-Second electrode; 221-Second contact electrode; 222-Second connecting electrode; 31-First pad; 32-Second pad; 14-Insulating layer; 141-First opening; 142-Second opening; 16-Groove; 2101-Adhesive layer; 2102-Reflective layer; 2103-Protective layer. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0048] In the description of this invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Additionally, the term "comprising" and any variations thereof mean "at least comprising."

[0049] Please see Figure 1 , Figure 2 , Figure 1 This is a schematic diagram of the structure of a current-technical light-emitting diode. Figure 2 This is a schematic diagram of the formation of an Al-O high-resistivity channel in a conventional light-emitting diode (LED) under a thermo-oxidative environment. The first electrode 21 includes a first contact electrode 211 and a first connecting electrode 212, and the second electrode 22 includes a second contact electrode 221 and a second connecting electrode 222. The first contact electrode 211 typically contains multiple metallic elements such as Al. In forming the first contact electrode 211, especially in ultraviolet (UV) LEDs, a high-temperature fusion process is required to form a good ohmic contact and prevent voltage rise. Figure 2 As shown, in this process, due to the low density of Al, it easily migrates upwards to the surface of the first contact electrode 211 under high-temperature conditions. Subsequently, in the thermo-oxidative environment of the fusion process forming the second contact electrode 221, it is inevitable that Al will react with the thermo-oxidative environment to form a high-resistance channel. This Al-O high-resistance channel has many adverse effects on current conduction and injection. For example:

[0050] 1. High impedance characteristics: The high resistance of Al2O3 can easily lead to a large potential barrier in LEDs, thereby limiting the current injection efficiency and thus reducing the response speed of LEDs during switching and dimming.

[0051] 2. Interface condition: The interface between Al2O3 and the LED active area is prone to defects or imperfections, which can lead to uneven current distribution at the interface, thereby affecting the light output and efficiency of the LED.

[0052] 3. Carrier diffusion: Due to the poor conductivity of Al2O3, the diffusion of charge carriers in the LED is restricted, which reduces the binding efficiency of electrons and holes and thus affects photon emission.

[0053] 4. Thermal management issues: During high-power operation, Al2O3 can easily cause heat to be difficult to dissipate, resulting in overheating and decreased efficiency of the LED.

[0054] 5. Uneven electric field distribution: Due to the high dielectric constant of Al2O3, its presence can easily lead to uneven electric field distribution inside the LED, thus affecting the carrier injection mode.

[0055] In addition, the epitaxial AlGaN structure of ultraviolet light-emitting diodes is a ternary crystal material, which presents the problem of inconsistent crystal orientation during growth, making it difficult to control defects and impurities at grain boundaries. Therefore, it is necessary to provide a technical solution that can suppress the formation of high-resistivity interfaces on the N-side to solve the above technical problems.

[0056] This invention provides a light-emitting diode (LED) comprising: a semiconductor stack including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially; a first electrode including a first contact electrode, a first intermediate electrode, and a first connecting electrode; a second electrode including a second contact electrode and a second connecting electrode; the first contact electrode is disposed on the semiconductor stack and electrically connected to the first semiconductor layer; the second contact electrode is disposed on the semiconductor stack and electrically connected to the second semiconductor layer; a first intermediate electrode covers the first contact electrode; a first connecting electrode connects to the first intermediate electrode; and a second connecting electrode connects to the second contact electrode; an insulating layer covering the semiconductor stack, the first electrode, and the second electrode, and having a first opening and a second opening; a first pad disposed on the insulating layer and electrically connected to the first electrode through the first opening; and a second pad disposed on the insulating layer and electrically connected to the second electrode through the second opening. By adding a first intermediate electrode and configuring the first contact electrode in an alloy structure state, this invention effectively suppresses the formation of a high-resistivity interface, thereby solving the problem of high resistance on the N-side electrode and improving the brightness and aging stability of the LED.

[0057] In some embodiments, the first contact electrode is an Al-containing alloy structure. This improves the ohmic contact between the first contact electrode and the first semiconductor layer, thereby reducing the device resistance.

[0058] In some embodiments, the second contact electrode is a transparent conductive oxide material or a Ni alloy structure. The second contact electrode can serve as a current spreading layer, enhancing the lateral current spreading capability within the chip.

[0059] In some embodiments, the first connecting electrode and the second connecting electrode are multilayer metal structures, and the first connecting electrode and the second connecting electrode are made of the same material.

[0060] In some embodiments, the surface material in contact with the insulating layer for the first and second connecting electrodes is selected from at least one of the group consisting of Cr, Ni, and Ti. The surface material serves as an adhesive layer, increasing the adhesion between the connecting electrodes and the insulating layer; furthermore, when the surface material is sufficiently thick, it can also effectively block interdiffusion between metals.

[0061] In some embodiments, the first intermediate electrode is a multilayer metal structure, comprising an adhesive layer, a reflective layer, and a protective layer sequentially stacked on the first contact electrode.

[0062] In some embodiments, the material of the adhesive layer is selected from at least one of the group consisting of Cr, Ni, and Ti.

[0063] In some embodiments, the material of the reflective layer is selected from at least one of the group consisting of single or multiple pairs of materials such as Pt, Pa, or AlTi, AlCr, and AlNi.

[0064] In some embodiments, the material of the protective layer is selected from at least one of the group consisting of Au, Rh, Pt, Ru, Pd, and Ir. Using a highly stable metal as the protective layer can more effectively prevent Al elements from migrating upwards and coming into contact with thermal oxygen to form a high-resistance oxide layer, thus preventing the formation of a high-resistance interface.

[0065] In some embodiments, the thickness of the protective layer ranges from 500 to 30,000 angstroms. Controlling the thickness of the protective layer within a suitable range can ensure its protective effect while also preventing the width of the first intermediate electrode from being too large, which would affect the effective light-emitting area of ​​the light-emitting diode and reduce its luminous efficiency.

[0066] In some embodiments, the thickness of the protective layer covering the top surface of the reflective layer is greater than the thickness of the protective layer covering the side surface of the reflective layer. On the one hand, since the area of ​​the front side of the first electrode is much larger than the area of ​​the side side, and Al generally moves upwards during thermal diffusion in a high-temperature environment, by setting the thickness of the protective layer covering the top surface of the reflective layer to be greater, the upwardly moving Al element can be better isolated from oxygen, thereby providing better protection. On the other hand, if the thickness of the protective layer covering the side surface of the reflective layer is too large, it will result in the sidewall of the first intermediate electrode being too thick, thereby increasing the overall width of the first electrode, which will affect its effective light-emitting area, especially when applied to small-sized light-emitting diodes.

[0067] In some embodiments, the thickness of the protective layer covering the top surface of the reflective layer ranges from 1,000 to 30,000 angstroms, and the thickness of the protective layer covering the side surface of the reflective layer ranges from 500 to 30,000 angstroms. Controlling the thickness of the protective layer covering the top and side surfaces of the reflective layer within a suitable range can ensure its protective effect while avoiding affecting the luminous efficiency.

[0068] In some embodiments, the thickness of the first intermediate electrode ranges from 1000 to 30000 angstroms. Controlling the thickness of the first intermediate electrode within a suitable range ensures its protective effect while avoiding affecting the light-emitting area of ​​the light-emitting diode and reducing its luminous efficiency.

[0069] In some embodiments, the edge of the first contact electrode is located inside the edge of the first intermediate electrode, and there is a certain distance between them, the distance being not less than 1 μm. By covering the first contact electrode in the alloy structure state with the first intermediate electrode and having a certain distance, the coating effect can be more effectively guaranteed, thereby suppressing the formation of a high-resistivity interface, thus solving the problem of high resistance of the N-side electrode, and improving the brightness and aging stability of the light-emitting diode.

[0070] In some embodiments, there is a certain gap between the edge of the first intermediate electrode and the edge of the first connecting electrode, the gap being no greater than 20 μm. The first connecting electrode may cover the first intermediate electrode or may not completely cover it. When the first connecting electrode covers the first intermediate electrode with a certain gap, its coverage can be more effectively guaranteed, thereby increasing the adhesion between the first electrode and the insulating layer, which is beneficial to improving the reliability of the light-emitting diode. When the first connecting electrode does not completely cover the first intermediate electrode, for example, the first connecting electrode only covers the top surface of the first intermediate electrode, more width design margin can be reserved for the first contact electrode and / or the first intermediate electrode: reserving more width design margin for the first contact electrode can provide sufficient voltage protection; reserving more width design margin for the first intermediate electrode can, on the one hand, improve the coverage effect of the first intermediate electrode on the first contact electrode, thereby more effectively suppressing the formation of high-resistivity interfaces, and on the other hand, it can also play a certain role in blocking metal interdiffusion; in addition, it can avoid expanding the overall width of the first electrode, especially when applied to small-sized light-emitting diodes, to avoid affecting the effective light-emitting area of ​​the light-emitting diode.

[0071] In some embodiments, the edge of the first intermediate electrode overlaps with the edge of the first connecting electrode. This ensures both the adhesion of the first electrode to the insulating layer and the allowance for the width design of the first contact electrode and / or the first intermediate electrode, while also preventing the overall width of the first electrode from being increased.

[0072] In some embodiments, the light-emitting diode is an ultraviolet light-emitting diode.

[0073] The present invention also provides a method for manufacturing a light-emitting diode, which includes the following steps:

[0074] Provide a substrate;

[0075] A semiconductor stack consisting of a first semiconductor layer, a light-emitting layer, and a second semiconductor layer is grown on a substrate.

[0076] Part of the second semiconductor layer and the light-emitting layer of the semiconductor stack are removed until the first semiconductor layer is exposed, thereby forming one or more mesa structures;

[0077] A first contact electrode is formed on the first semiconductor layer and then fused at high temperature to form an alloy structure for the first contact electrode.

[0078] A first intermediate electrode is formed on the first contact electrode, and the first intermediate electrode covers the first contact electrode.

[0079] A second contact electrode is formed on the second semiconductor layer and fused together in a hot and oxygen environment;

[0080] A first connecting electrode and a second connecting electrode are formed on the first intermediate electrode and the second contact electrode, respectively, thereby forming a first electrode and a second electrode.

[0081] An insulating layer is formed, the insulation covering the semiconductor stack, the first electrode and the second electrode, and a first opening and a second opening are formed in the insulating layer;

[0082] A first pad and a second pad are formed on an insulating layer. The first pad is electrically connected to the first electrode through a first opening, and the second pad is electrically connected to the second electrode through a second opening.

[0083] This invention protects the first contact electrode by first forming a first intermediate electrode that covers the first contact electrode after the first contact electrode is formed, and then forming the second contact electrode. This avoids Al in the first contact electrode in the alloy structure state from migrating to the electrode surface and forming a high-resistance channel with heat and oxygen, thereby solving the problem of high resistance of the N-side electrode and improving the brightness and aging stability of the light-emitting diode.

[0084] The present invention also provides a light-emitting device, which employs the light-emitting diode provided in any of the above embodiments.

[0085] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention and through various specific implementation methods. Example 1

[0086] Please see Figure 3 , Figure 4 , Figure 3 This is a top view schematic diagram of the light-emitting diode provided in the first embodiment of the present invention. Figure 4 It is along Figure 3 A schematic cross-sectional view taken by the cut line AA. To achieve at least one or more of the advantages mentioned above, an embodiment of the present invention provides a light-emitting diode, which may include at least a semiconductor stack 12, a first electrode 21, a second electrode 22, an insulating layer 14, a first pad 31, and a second pad 32.

[0087] Semiconductor stack 12 may be disposed on substrate 10. Substrate 10 may be an insulating substrate, preferably made of a transparent or translucent material. In the illustrated embodiment, substrate 10 is a sapphire substrate. In some embodiments, substrate 10 may be a patterned sapphire substrate, but the invention is not limited thereto. Substrate 10 may also be made of a conductive or semiconductor material. For example, the substrate 10 material may include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.

[0088] The semiconductor stack 12 includes a first semiconductor layer 123, a light-emitting layer 124, and a second semiconductor layer 125 stacked sequentially. That is, the light-emitting layer 124 is located between the first semiconductor layer 123 and the second semiconductor layer 125. The first semiconductor layer 123 can be an N-type layer, and correspondingly, the second semiconductor layer 125 can be a P-type layer, or vice versa. In this embodiment of the invention, the first semiconductor layer 123 is an N-type layer, and the second semiconductor layer 125 is a P-type layer. Under the influence of a power source, the first semiconductor layer 123 can provide electrons to the light-emitting layer 124 by doping with N-type impurities. The N-type impurities can include one or a combination of Si, Ge, Sn, Se, and Te; the second semiconductor layer 125 can provide holes to the light-emitting layer 124 by doping with P-type impurities. The P-type impurities can include one or a combination of Mg, Zn, Ca, Sr, and Ba.

[0089] The light-emitting layer 124 can be a quantum well (QW) structure. In some embodiments, the light-emitting layer 124 can also be a multiple quantum well (MQW) structure, wherein the multiple quantum well structure includes multiple quantum well layers (Wells) and multiple quantum barrier layers arranged alternately in a repeating manner, such as GaN / AlGaN, GaN / InGaN, AlGaN / AlGaN, AlGaN / InGaN, or InAlGaN / InAlGaN multiple quantum well structures. Furthermore, the composition and thickness of the well layers within the light-emitting layer 124 determine the wavelength of the generated light. To improve the luminous efficiency of the light-emitting layer 124, this can be achieved by changing the depth of the quantum wells, the number of paired quantum wells and quantum barriers, the thickness, and / or other characteristics within the light-emitting layer 124. In embodiments of the present invention, the light-emitting layer 124 can be an AlGaN / AlGaN multiple quantum well structure, emitting light in the ultraviolet band, and the light-emitting diode is an ultraviolet light-emitting diode.

[0090] Please see Figure 3 Viewed from above the light-emitting diode toward the semiconductor stack 12, the second semiconductor layer 125 and the light-emitting layer 124 are in the shape of an "E". The first electrode 21 surrounds the light-emitting layer 124. The first electrode 21 includes a first contact electrode 211, a first intermediate electrode 210 and a first connecting electrode 212.

[0091] Please see Figure 4 The first contact electrode 211 is disposed on the semiconductor stack 12 and electrically connected to the first semiconductor layer 123. Since the first semiconductor layer 123 has a high Al content, in order to form a good ohmic contact with the first semiconductor layer 123 and reduce the resistance of the device, the first contact electrode 211 is an Al-containing alloy layer. Preferably, in some embodiments, the material of the first contact electrode 211 includes an alloy formed by fusing at least one of Ti, Cr, and Ni with Al. For example, it can be a Ti-Al-Ti-Pt alloy, Ti-Al-Au alloy, Ti-Al-Ni-Au alloy, Cr-Al-Ti-Au alloy, Ti-Al-Au-Pt alloy, Ti-Al-Ti-Ni-Pt alloy, Ti-Al-Ni-Au alloy, Cr-Al-Ti-Ni-Au alloy, Ti-Al-Au-Ni-Pt alloy, VAlVAu alloy, etc.

[0092] The first intermediate electrode 210 is disposed on and covers the first contact electrode 211. Specifically, the first intermediate electrode 210 completely covers the top and side surfaces of the first contact electrode 211. (See also...) Figure 5 , Figure 5This is a schematic diagram of the light-emitting diode (LED) provided by the present invention under a thermo-oxidative environment. After a high-temperature fusion process, Al elements in the first contact electrode 211 tend to migrate upwards to the surface of the first contact electrode 211. The present invention completely covers the first contact electrode 211 in its alloy structure state with the first intermediate electrode 210, preventing the Al elements migrating to the surface of the first contact electrode 211 from reacting with the thermo-oxidative reaction required in the subsequent fusion process to form the second contact electrode 221, thus effectively suppressing the formation of a high-resistance interface, solving the problem of high resistance on the N-side electrode, and thereby improving the brightness and aging stability of the LED. In some embodiments, the edge of the first contact electrode 211 is located inside the edge of the first intermediate electrode 210, with a certain distance between them. This distance is not less than 1 μm. In some preferred embodiments, the distance between the edge of the first contact electrode 211 and the edge of the first intermediate electrode 210 ranges from 1 to 20 μm. More preferably, in some embodiments, the distance ranges from 2 to 5 μm, for example, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, etc. By setting a certain distance between the edge of the first contact electrode 211 and the edge of the first intermediate electrode 210, the covering effect is more effectively guaranteed, further avoiding the formation of a high-resistivity interface. In some embodiments, the thickness of the first intermediate electrode 210 ranges from 1000 to 30000 angstroms. In some preferred embodiments, the thickness of the first intermediate electrode 210 can range from 1000 to 10000 angstroms. More preferably, in some embodiments, the thickness of the first intermediate electrode 210 can range from 1300 to 5000 angstroms, such as 1500 angstroms, 2000 angstroms, 2500 angstroms, 3000 angstroms, 3500 angstroms, 4000 angstroms, 4500 angstroms, etc. Controlling the thickness of the first intermediate electrode 210 within a suitable range can ensure its protective effect while avoiding an excessively large width of the first intermediate electrode 210, which would affect the effective light-emitting area of ​​the light-emitting diode and reduce its luminous efficiency.

[0093] Please see Figure 6 , Figure 6This is a schematic diagram of the structure of the first intermediate electrode 210. In some embodiments, the first intermediate electrode 210 is a multilayer metal structure. The first intermediate electrode 210 includes an adhesive layer 2101, a reflective layer 2102, and a protective layer 2103 that are sequentially stacked on the first contact electrode 211. The adhesive layer 2101 is formed on the first contact electrode 211 and covers the top and side surfaces of the first contact electrode 211. The material of the adhesive layer 2101 is selected from at least one of the group consisting of Cr, Ni, and Ti. The reflective layer 2102 is formed on the adhesive layer 2101 and covers the top and side surfaces of the adhesive layer 2101. The material of the reflective layer 2102 is selected from at least one of the group consisting of Pt, Pa, or AlTi, AlCr, AlNi, etc., in single or multiple pairs. The protective layer 2103 is formed on the reflective layer 2102 and covers the top and side surfaces of the reflective layer 2102. The material of the protective layer 2103 is selected from at least one of the group consisting of Au, Rh, Pt, Ru, Pd, and Ir. Using a metal with high stability as the protective layer 2103 can more effectively prevent Al elements from migrating upward and contacting with heat and oxygen to form a high-resistance oxide layer, thus preventing the formation of a high-resistance interface. In some embodiments, the first intermediate electrode 210 may only include a protective layer 2103, or the first intermediate electrode 210 may only include an adhesive layer 2101 and a protective layer 2103, thereby avoiding the first intermediate electrode 210 from having an excessively large width, which would affect the effective light-emitting area of ​​the light-emitting diode and reduce the luminous efficiency. In the embodiments of the present invention, the thickness of the protective layer 2103 ranges from 500 to 30,000 angstroms. In some preferred embodiments, the thickness of the protective layer 2103 can range from 500 to 10,000 angstroms. Further, more preferably, in some embodiments, the thickness of the protective layer 2103 can range from 800 to 5,000 angstroms, such as 1,000 angstroms, 2,000 angstroms, 3,000 angstroms, 4,000 angstroms, etc. By setting a protective layer 2103 of appropriate thickness, its protective effect can be guaranteed, while also avoiding the first intermediate electrode 210 from having an excessively large width, which would affect the luminous efficiency. In this invention, the thickness of the protective layer 2103 covering the top and side surfaces of the reflective layer 2102 can be the same or different.In some preferred embodiments, the thickness of the protective layer 2103 covering the top surface of the reflective layer 2102 can be greater than the thickness of the protective layer 2103 covering the side surface of the reflective layer 2102. The thickness of the protective layer 2103 covering the top surface of the reflective layer 2102 ranges from 1000 to 30000 angstroms, for example, 1000 angstroms, 2000 angstroms, 3000 angstroms, 4000 angstroms, etc.; the thickness of the protective layer 2103 covering the side surface of the reflective layer 2102 ranges from 500 to 30000 angstroms, for example, 500 angstroms, 1000 angstroms, 1500 angstroms, 2000 angstroms, etc. On the one hand, Since the area of ​​the front side of the first electrode 21 is much larger than that of the side side, and Al generally moves upwards during thermal diffusion in high-temperature environments, a thicker protective layer 2103 covering the top surface of the reflective layer 2102 can better isolate the upward-moving Al elements from oxygen, thus providing better protection. On the other hand, if the protective layer 2103 covering the side surface of the reflective layer 2102 is too thick, the sidewall of the first intermediate electrode 210 will be too thick, leading to an increase in the overall width of the first electrode 21. This is particularly problematic when applied to small-sized LEDs, affecting their effective light-emitting area. In summary, by controlling the thickness of the protective layer 2103 covering the top and side surfaces of the reflective layer 2102 within a suitable range, the protective effect can be guaranteed, while also avoiding any impact on luminous efficiency.

[0094] Please continue reading Figure 4In this embodiment, the first connecting electrode 212 is disposed on and covers the first intermediate electrode 210. Specifically, the first connecting electrode 212 completely covers the top and side surfaces of the first intermediate electrode 210, and the edge of the first intermediate electrode 210 is located inside the edge of the first connecting electrode 212, with a certain distance between them. This distance is no greater than 20 μm. Preferably, in some embodiments, the distance between the edge of the first connecting electrode 212 and the edge of the first intermediate electrode 210 is 2~5 μm, for example, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, etc. In this embodiment, by setting the first connecting electrode 212 to cover the first intermediate electrode 210 and having a certain distance between their edges, its covering performance can be more effectively guaranteed, thereby increasing the adhesion between the first electrode 21 and the insulating layer 14, which is beneficial to improving the reliability of the light-emitting diode. In some embodiments, the first connecting electrode 212 is a multilayer metal structure, and the material of the first connecting electrode 212 can be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al. The surface material in contact between the first connecting electrode 212 and the insulating layer 14 is selected from at least one of the group consisting of Cr, Ni, and Ti. The surface material serves two purposes: firstly, it acts as an adhesion layer, increasing the adhesion between the first connecting electrode 212 and the insulating layer 14, which is beneficial for improving the reliability of the light-emitting diode; secondly, when the surface material is sufficiently thick, it can also prevent metal from the first pad 31 from diffusing into the first connecting electrode 212 and affecting the reliability of the light-emitting diode.

[0095] Please continue reading Figure 4A second electrode 22 is disposed on the semiconductor stack 12, and the second electrode 22 includes a second contact electrode 221 and a second connecting electrode 222. The second contact electrode 221 is disposed on the semiconductor stack 12 and electrically connected to the second semiconductor layer 125. The second contact electrode 221 can be made of a transparent conductive material or a metallic material, and its suitability can be selected according to the doping of the surface layer (such as a p-type GaN surface layer) of the second semiconductor layer 125. In some embodiments, the second contact electrode 221 has a Ni alloy structure. For example, the second contact electrode 221 can be a metal alloy such as NiAu, NiAg, NiRh, AuNiAu, PdNiAu, or NiPdAu. In this embodiment, the second contact electrode 221 is preferably made of NiAu material, whose composition includes Ni, Au, and NiO. In some embodiments, the second contact electrode 221 is made of a transparent conductive material, which may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO). This disclosure is not intended to limit the scope of the embodiments.

[0096] In some embodiments, the second connecting electrode 222 is disposed on the second contact electrode 221. In this embodiment, the second connecting electrode 222 is disposed on and covers the second contact electrode 221, specifically, the second connecting electrode 222 completely covers the top surface and side surface of the second contact electrode 221. See also [link to embodiments]. Figure 7 , Figure 8The second connecting electrode 222 may be disposed on the second contact electrode 221 and only cover a portion of the top surface of the second contact electrode 221; however, this embodiment is not limited thereto. In some embodiments, the second connecting electrode 222 is also a multilayer metal structure and is made of the same material as the first connecting electrode 212. The material of the second connecting electrode 222 may be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al. Preferably, the surface material of the second connecting electrode 222 in contact with the insulating layer 14 is also selected from at least one of the group consisting of Cr, Ni, and Ti, with the same specific effects as the first connecting electrode 212, which will not be described in detail here.

[0097] An insulating layer 14 covers the semiconductor stack 12, the first electrode 21, and the second electrode 22. The insulating layer 14 has different functions depending on its location. For example, when the insulating layer 14 covers the sidewalls of the semiconductor stack 12, it can prevent electrical connection between the first semiconductor layer 123 and the second semiconductor layer 125 due to leakage of conductive material, reducing short-circuit abnormalities in the light-emitting diode. However, this disclosure is not limited to this. The material of the insulating layer 14 includes a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. Inorganic materials may include silicone. Dielectric materials include electrically insulating materials such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 14 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or combinations thereof. Such combinations may, for example, be a Bragg mirror (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0098] The light-emitting diode also includes a first pad 31 and a second pad 32. The first pad 31 and the second pad 32 are disposed on an insulating layer 14. The insulating layer 14 has a first opening 141 and a second opening 142. The first pad 31 is connected to the first electrode 21 through the first opening 141, and the second pad 32 is connected to the second electrode 22 through the second opening 142. Specifically, the first pad 31 is connected to the first connecting electrode 212 through the first opening 141, and the second pad 32 is connected to the second connecting electrode 222 through the second opening 142. The first pad 31 and the second pad 32 can be metal pads and can be formed together using the same material in the same process, thus having the same layer structure.

[0099] Please see Figures 9 to 15 , Figures 9 to 15 This is a schematic diagram of the structure of the light-emitting diode in the first embodiment at each stage of the manufacturing process.

[0100] First, refer to Figure 9A semiconductor stack 12 comprising a first semiconductor layer 123, a light-emitting layer 124, and a second semiconductor layer 125 is formed on a substrate 10. Then, the second semiconductor layer 125 is etched toward the first semiconductor layer 123 to remove a portion of the second semiconductor layer 125 and the light-emitting layer 124 of the semiconductor stack 12 until the first semiconductor layer 123 is exposed, thereby forming one or more mesa structures.

[0101] Secondly, refer to Figure 10 A first contact electrode 211 is formed on the first semiconductor layer 123. In order to form a good ohmic contact and prevent voltage rise, the first contact electrode 211 needs to be subjected to a high-temperature fusion process. The temperature range can be above 700°C, preferably, for example, between 700°C and 1000°C, so that the first contact electrode 211 forms an alloy structure.

[0102] Next, refer to Figure 11 A first intermediate electrode 210 is formed on the first contact electrode 211, and the first intermediate electrode 210 covers the first contact electrode 211. Specifically, the first intermediate electrode 210 completely covers the top surface and side surface of the first contact electrode 211, thereby preventing the Al element in the first contact electrode 211 in the alloy structure state from migrating to the electrode surface and reacting with oxygen in the subsequent thermo-oxidative environment to form a high-resistance channel.

[0103] Then, refer to Figure 12 A second contact electrode 221 is formed on the second semiconductor layer 125, and the second contact electrode 221 is fused in a hot and oxygen environment. The temperature range is generally no more than 700°C, preferably, for example, between 400°C and 700°C. On the one hand, this can optimize and reduce the contact impedance of the second semiconductor layer 125, thereby reducing the voltage; on the other hand, it can improve the crystal structure, making the current injection more uniform, thereby improving the brightness.

[0104] For further details, please refer to... Figure 13 A first connecting electrode 212 and a second connecting electrode 222 are formed on the first intermediate electrode 210 and the second contact electrode 221, respectively, thereby forming a first electrode 21 and a second electrode 22.

[0105] Furthermore, refer to Figure 14 An insulating layer 14 is formed, which covers the semiconductor stack 12, the first electrode 21, and the second electrode 22. The insulating layer 14 has a first opening 141 and a second opening 142, which expose the first electrode 21 and the second electrode 22, respectively, to facilitate the subsequent electrical setting of the pads. The insulating layer 14 mainly serves to isolate electrical components and protect internal components.

[0106] Finally, refer to Figure 15A first pad 31 and a second pad 32 are formed on the insulating layer 14. The first pad 31 is electrically connected to the first electrode 21 through the first opening 141, and the second pad 32 is electrically connected to the second electrode 22 through the second opening 142. Specifically, the first pad 31 is connected to the first connecting electrode 212 through the first opening 141, and the second pad 32 is connected to the second connecting electrode 222 through the second opening 142.

[0107] The present invention protects the first contact electrode 211 by first forming a first intermediate electrode 210 covering the first contact electrode 211 after forming the first contact electrode 211, and then forming the second contact electrode 221 through a thermo-oxygen environment. This can prevent Al in the first contact electrode 211 in the alloy structure state from migrating out and reacting with oxygen, effectively suppressing the formation of a high-resistivity interface, thereby solving the problem of high resistance of the N-side electrode, and thus improving the brightness and aging stability of the light-emitting diode. Example 2

[0108] Please see Figure 16 , Figure 17 , Figure 16 This is a top view schematic diagram of the light-emitting diode provided in the second embodiment of the present invention. Figure 17 It is along Figure 16A cross-sectional view taken by the intercept line AA is shown. Compared to the light-emitting diode of the first embodiment of the present invention, the main difference of the light-emitting diode of this second embodiment is that: the first connecting electrode 212 is disposed on the first intermediate electrode 210 and the first connecting electrode 212 only covers the top surface of the first intermediate electrode 210. In this embodiment, the edge of the first connecting electrode 212 is located inside the edge of the first intermediate electrode 210, and there is a certain distance between them. This distance is no greater than 20 μm. Preferably, in some embodiments, the distance between the edge of the first connecting electrode 212 and the edge of the first intermediate electrode 210 is in the range of 2~5 μm, for example, it can be 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, etc. With this design, compared with the first embodiment, under the premise that the overall width of the first electrode 21 is consistent, more width design margin can be reserved for the first contact electrode 211, more width design margin can be reserved for the first intermediate electrode 210, and more width design margin can be reserved for both the first contact electrode 211 and the first intermediate electrode 210. By allowing more width design margin to the first contact electrode 211, the ohmic contact between the first contact electrode 211 and the first semiconductor layer 123 can be improved, thereby reducing the voltage. Similarly, by allowing more width design margin to the first intermediate electrode 210, the coverage effect of the first intermediate electrode 210 on the first contact electrode 211 can be improved, thus better suppressing the formation of a high-resistivity interface. It can also provide some barrier to interdiffusion between metals. Furthermore, to prevent short circuits, it is generally necessary to maintain a certain distance between the first electrode 21 and the light-emitting area of ​​the LED. Since the first connecting electrode 212 does not cover the side surface of the first intermediate electrode 210, it is also possible to avoid increasing the overall width of the first electrode 21, thus avoiding affecting the effective light-emitting area of ​​the LED and ensuring its luminous efficiency, especially when applied to small-sized LEDs. Example 3

[0109] Please see Figure 18 , Figure 19 , Figure 18 This is a top view schematic diagram of the light-emitting diode provided in the third embodiment of the present invention. Figure 19 It is along Figure 18A cross-sectional view taken by the intercept line AA. Compared with the light-emitting diode of the first embodiment of the present invention, the main difference of the light-emitting diode of the third embodiment is that: while the first connecting electrode 212 covers the top surface and side surface of the first intermediate electrode 210, the edge of the first intermediate electrode 210 overlaps with the edge of the first connecting electrode 212. By designing the first connecting electrode 212 to cover the top surface and side surface of the first intermediate electrode 210, the surface layer in contact with the insulating layer 14 is still the first connecting electrode 212, which can ensure the adhesion between the first electrode 21 and the insulating layer 14 and is beneficial to improving the reliability of the light-emitting diode; the design that the edge of the first intermediate electrode 210 overlaps with the edge of the first connecting electrode 212 can also reserve more width design margin for the first contact electrode 211 and / or the first intermediate electrode 210, while avoiding expanding the overall width of the first electrode 21. The corresponding technical effects have been described in detail in Embodiment 2, and will not be repeated here. Example 4

[0110] Please see Figure 20 , Figure 21 , Figure 20 This is a top view schematic diagram of the light-emitting diode provided in the fourth embodiment of the present invention. Figure 21 It is along Figure 20 A cross-sectional view taken by the cut line AA. Compared with the light-emitting diode of the first embodiment of the present invention, the light-emitting diode of the fourth embodiment is mainly different in that: the light-emitting diode also includes a groove 16, which is formed inside and outside the first semiconductor layer 123. The groove 16 extends from the first semiconductor layer 123 toward the substrate 10. It can extend downward from the upper surface of the first semiconductor layer 123 for an appropriate distance without penetrating to the upper surface of the substrate 10. The groove 16 can also extend downward from the first semiconductor layer 123 to the upper surface of the substrate 10, that is, the groove 16 completely penetrates the first semiconductor layer 123. The first contact electrode 211 covers the sidewall and bottom of the groove 16, as well as the part of the planar area (such as the upper surface of the first semiconductor layer 123) that covers the first semiconductor layer 123, forming an ohmic contact with the first semiconductor layer 123. By setting the first contact electrode 211 to cover the sidewall of the groove 16, the effect of current shunting and lateral injection into the first semiconductor layer 123 can be achieved, which strengthens the lateral propagation of current in the first semiconductor layer 123 and reduces the operating voltage.

[0111] Furthermore, due to the waveguide effect, the light from existing light-emitting diodes undergoes oscillating reflection between the light-emitting layer 124 and the substrate 10, causing the light to be absorbed in the semiconductor layer. However, this invention, by embedding the first contact electrode 211 deep into the groove 16, blocks the waveguide effect at the groove 16, allowing the first contact electrode 211 to reflect more light emitted from the light-emitting layer 124, thus reflecting more light to the outside and improving the light extraction efficiency of the light-emitting diode. In some embodiments, the sidewalls of the groove 16 are inclined; preferably, the inclination angle is less than or equal to 60°, and more preferably, the inclination angle ranges from 25° to 40°. The sidewalls of the groove 16 can also have a stepped or other inclined shape, which can further increase the contact area between the first contact electrode 211 and the sidewall of the groove 16, improving the effect of lateral injection of current into the first semiconductor layer 123. However, this patent is not limited to this, and the configuration can be selected according to actual conditions. Furthermore, in cases such as Figure 7 , Figure 16 , Figure 18 In the embodiments shown in the accompanying drawings, corresponding grooves 16 may also be provided to enhance the lateral propagation of current within the first semiconductor layer 123 and reduce the operating voltage.

[0112] The present invention also provides a light-emitting device that uses a light-emitting diode as described in any of the above embodiments, which can effectively improve the performance of the light-emitting device.

[0113] In summary, the light-emitting diode provided by the present invention, by adding a first intermediate electrode and setting a first contact electrode in an alloy-coated state, can effectively suppress the formation of a high-resistivity interface, thereby solving the problem of high resistance of the N-side electrode, and thus improving the brightness and aging stability of the light-emitting diode.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting diode, characterized in that: The light-emitting diode includes: A semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially. The first electrode includes a first contact electrode, a first intermediate electrode, and a first connecting electrode; the second electrode includes a second contact electrode and a second connecting electrode. The first contact electrode is disposed on the semiconductor stack and is electrically connected to the first semiconductor layer; The second contact electrode is disposed on the semiconductor stack and is electrically connected to the second semiconductor layer; The first intermediate electrode covers the first contact electrode. The first intermediate electrode is a multilayer metal structure, including an adhesive layer, a reflective layer, and a protective layer that are stacked sequentially on the first contact electrode. The thickness of the protective layer covering the top surface of the reflective layer is greater than the thickness of the protective layer covering the side surface of the reflective layer. The first connecting electrode is connected to the first intermediate electrode; The second connecting electrode is connected to the second contact electrode; An insulating layer covers the semiconductor stack, the first electrode, and the second electrode, the insulating layer having a first opening and a second opening; The first pad is disposed on the insulating layer and electrically connected to the first electrode through the first opening; The second pad is disposed on the insulating layer and electrically connected to the second electrode through the second opening.

2. The light-emitting diode according to claim 1, characterized in that: The first contact electrode is an Al-containing alloy structure.

3. The light-emitting diode according to claim 1, characterized in that: The second contact electrode is made of a transparent conductive oxide material or a Ni alloy structure.

4. The light-emitting diode according to claim 1, characterized in that: The first connecting electrode and the second connecting electrode are multilayer metal structures, and the first connecting electrode and the second connecting electrode are made of the same material.

5. The light-emitting diode according to claim 1, characterized in that: The surface material of the first connecting electrode and the second connecting electrode in contact with the insulating layer is selected from at least one of the group consisting of Cr, Ni, and Ti.

6. The light-emitting diode according to claim 1, characterized in that: The material of the adhesive layer is selected from at least one of the group consisting of Cr, Ni, and Ti.

7. The light-emitting diode according to claim 1, characterized in that: The material of the reflective layer is selected from at least one of the group consisting of Pt, Pa, or AlTi, AlCr, AlNi, in single or multiple pairs.

8. The light-emitting diode according to claim 1, characterized in that: The material of the protective layer is selected from at least one of the group consisting of Au, Rh, Pt, Ru, Pd, and Ir.

9. The light-emitting diode according to claim 1, characterized in that: The thickness of the protective layer ranges from 500 to 30,000 angstroms.

10. The light-emitting diode according to claim 1, characterized in that: The thickness of the protective layer covering the top surface of the reflective layer ranges from 1,000 to 30,000 angstroms, and the thickness of the protective layer covering the side surface of the reflective layer ranges from 500 to 30,000 angstroms.

11. The light-emitting diode according to claim 1, characterized in that: The thickness of the first intermediate electrode ranges from 1,000 to 30,000 angstroms.

12. The light-emitting diode according to claim 1, characterized in that: The edge of the first contact electrode is located inside the edge of the first intermediate electrode, and there is a certain distance between them, which is not less than 1 μm.

13. The light-emitting diode according to claim 1, characterized in that: There is a certain distance between the edge of the first intermediate electrode and the edge of the first connecting electrode, and the distance is no greater than 20 μm.

14. The light-emitting diode according to claim 1, characterized in that: The edge of the first intermediate electrode overlaps with the edge of the first connecting electrode.

15. The light-emitting diode according to claim 1, characterized in that: The light-emitting diode is an ultraviolet light-emitting diode.

16. A method for manufacturing a light-emitting diode, characterized in that, Includes the following steps: Provide a substrate; A semiconductor stack consisting of a first semiconductor layer, a light-emitting layer, and a second semiconductor layer is grown on the substrate. Remove a portion of the second semiconductor layer and the light-emitting layer of the semiconductor stack until the first semiconductor layer is exposed, thereby forming one or more mesa structures; A first contact electrode is formed on the first semiconductor layer and then fused at high temperature to form an alloy structure for the first contact electrode. A first intermediate electrode is formed on the first contact electrode, and the first intermediate electrode covers the first contact electrode; A second contact electrode is formed on the second semiconductor layer and fused together in a hot and oxygen environment; A first connecting electrode and a second connecting electrode are formed on the first intermediate electrode and the second contact electrode, respectively, thereby forming a first electrode and a second electrode; An insulating layer is formed, the insulating layer covering the semiconductor stack, the first electrode and the second electrode, and a first opening and a second opening are formed in the insulating layer; A first pad and a second pad are formed on the insulating layer. The first pad is electrically connected to the first electrode through the first opening, and the second pad is electrically connected to the second electrode through the second opening.

17. A light-emitting device, characterized in that: The light-emitting device is a light-emitting diode as described in any one of claims 1 to 15.

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