Light-emitting display device

Abstract

A light emitting display device is provided. The light emitting display device includes a pixel driving portion including a transistor, a planarization layer covering the pixel driving portion, an anode of a light emitting diode disposed on the planarization layer, a pixel defining layer including an opening overlapping the anode of the light emitting diode in a plan view and including an inorganic insulating material, comprising an opening overlapping with the opening of the pixel defining layer and having conductivity, a light emitting layer disposed in the opening of the pixel defining layer, a cathode of a light emitting diode disposed on the light emitting layer, and a separator dividing the wall into a first wall and a second wall, the first wall is electrically connected to a transistor of the pixel driving portion through a first contact hole passing through the pixel defining layer and the planarization layer.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2023 - 0161052, filed with the Korean Intellectual Property Office on November 20, 2023, the entire contents of which are incorporated herein by reference. Technical field

[0003] Embodiments relate to a light - emitting display device. Background art

[0004] A display device is a display screen and includes devices such as a liquid crystal display (LCD) and an organic light - emitting diode (OLED). These display devices are used in various electronic devices such as mobile phones, navigation devices, digital cameras, e - books, portable game consoles, and various terminals.

[0005] An organic light - emitting display device has a self - emitting characteristic and, unlike a liquid crystal display, does not require a separate light source, so the thickness and weight can be reduced. In addition, the organic light - emitting display device has high - quality characteristics such as low power consumption, high brightness, and a fast response speed. Summary of the invention

[0006] Embodiments provide a light - emitting display device capable of applying an electric voltage to an anode of a light - emitting diode using a separator.

[0007] In addition, embodiments provide a light - emitting display device having high resolution or shielding or blocking noise transmission to a touch - sensing electrode by applying a selected voltage to a part of the separator.

[0008] A light - emitting display device according to an embodiment may include a pixel driving unit including a transistor, a planarization layer covering the pixel driving unit, an anode of a light - emitting diode disposed on the planarization layer, a pixel defining layer including an opening overlapping the anode of the light - emitting diode in a plan view and including an inorganic insulating material, a wall including an opening overlapping the opening of the pixel defining layer and having conductivity, a light - emitting layer disposed in the opening of the pixel defining layer, a cathode of the light - emitting diode disposed on the light - emitting layer, and a separator dividing the wall into a first wall and a second wall. The first wall may be electrically connected to the transistor of the pixel driving unit through a first contact hole passing through the pixel defining layer and the planarization layer, and the cathode of the light - emitting diode contacts a side surface of the first wall and may be electrically connected to the transistor.

[0009] The first wall may include a first conductive wall and a second conductive wall disposed on the first conductive wall, and the second conductive wall may have a tip portion protruding from the first conductive wall.

[0010] The tip portion may protrude toward an opening of the first wall that overlaps with an opening of the pixel defining layer.

[0011] The first conductive wall may include aluminum, and the second conductive wall may include titanium.

[0012] The first wall may be an inner conductive wall, the second wall may be an outer conductive wall. The inner conductive wall may surround the opening of the pixel defining layer in a plan view, and the outer conductive wall may be electrically separated from the inner conductive wall. The inner conductive wall may include a first inner conductive wall and a second inner conductive wall provided on the first inner conductive wall, and the outer conductive wall may include a first outer conductive wall and a second outer conductive wall provided on the first outer conductive wall.

[0013] The inner conductive wall may be electrically connected to a transistor of the pixel driving unit through a first contact hole, and the outer conductive wall may receive a constant voltage through a second contact hole passing through the pixel defining layer and the planarization layer.

[0014] The separation light-emitting layer and the separation cathode may be respectively formed on the outer conductive wall and may be separated from the light-emitting layer and the cathode by a separator.

[0015] The light-emitting display device may further include a packaging layer covering the wall and the cathode, and the separator may include an empty space passing through the packaging layer and the wall.

[0016] The empty space of the separator may be filled with an insulating material.

[0017] The light-emitting display device may further include a transparent electrode formed of a transparent conductive material and provided on the packaging layer and the separator, and a constant voltage may be applied to the transparent electrode.

[0018] The light-emitting display device may further include a packaging layer covering the wall and the cathode. The separator may pass through the wall and be provided between the first wall and the second wall, and the packaging layer may be provided on the separator.

[0019] The light-emitting display device according to an embodiment may include a pixel driving unit including a transistor, a planarization layer covering the pixel driving unit, an anode of a light-emitting diode provided on the planarization layer, a pixel defining layer including an opening overlapping with the anode of the light-emitting diode in a plan view and including a black pixel defining layer and a transparent pixel defining layer, a wall including an opening overlapping with the opening of the pixel defining layer and having conductivity, a light-emitting layer provided in the opening of the pixel defining layer, a cathode of the light-emitting diode provided on the light-emitting layer, and a separator dividing the wall into a first wall and a second wall. The first wall may be electrically connected to the transistor of the pixel driving unit through a first contact hole passing through the pixel defining layer and the planarization layer. The cathode of the light-emitting diode may be in contact with a side surface of the first wall and may be electrically connected to the transistor. The black pixel defining layer may be formed of a black organic material or an organic material containing a light-blocking material, and the transparent pixel defining layer may be formed of a photosensitive organic insulating material that transmits light.

[0020] The pixel defining layer may further include an intermediate pixel defining layer, and the intermediate pixel defining layer may be an inorganic insulating layer and may be disposed between the black pixel defining layer and the transparent pixel defining layer.

[0021] The first wall may include a first conductive wall and a second conductive wall disposed on the first conductive wall. The second conductive wall may have a tip portion protruding from the first conductive wall, and the tip portion may protrude toward an opening of the first wall overlapping with the opening of the pixel defining layer.

[0022] The first conductive wall may contain aluminum, and the second conductive wall may contain titanium.

[0023] The first wall may be an inner conductive wall, and the second wall may be an outer conductive wall. The inner conductive wall may surround the opening of the pixel defining layer in a plan view. The outer conductive wall may be electrically separated from the inner conductive wall. The inner conductive wall may include a first inner conductive wall and a second inner conductive wall disposed on the first inner conductive wall. The outer conductive wall may include a first outer conductive wall and a second outer conductive wall disposed on the first outer conductive wall. The inner conductive wall may be electrically connected to a transistor of the pixel driving unit through a first contact hole, and the outer conductive wall may receive a constant voltage through a second contact hole passing through the pixel defining layer and the planarization layer.

[0024] The separation light-emitting layer and the separation cathode may be respectively formed on the outer conductive wall and may be separated from the light-emitting layer and the cathode by a separator.

[0025] The light-emitting display device may further include a packaging layer covering the wall and the cathode, and the separator may include an empty space passing through the packaging layer and the wall.

[0026] The empty space of the separator may be filled with an insulating material.

[0027] The light-emitting display device may further include a packaging layer covering the wall and the cathode. The separator may pass through the wall and may be disposed between the first wall and the second wall, and the packaging layer may be disposed on the separator.

[0028] According to an embodiment, the separator may be formed by etching a wall including at least two layers made of a conductive material to form an empty space or by filling a space of a hole with an insulating material so that the layers can be separated by the separator, and a voltage may be applied to an electrode of the light-emitting diode by electrically connecting the electrode of the light-emitting diode to the wall.

[0029] According to an embodiment, a voltage line may be removed by allowing a selected voltage to be applied to another part of the separator, thereby providing a high-resolution light-emitting display device.

[0030] According to an embodiment, it is an object to provide a light-emitting display device that shields noise from being transmitted to a touch sensing electrode provided on a front surface by allowing a selected voltage to be applied to another part of the separator. Description of the Drawings

[0031] Figure 1 is a schematic diagram of an equivalent circuit of a pixel included in a light-emitting display device according to an embodiment.

[0032] Figure 2 is a waveform diagram showing the signals applied to the Figure 1 pixel.

[0033] Figure 3 is a schematic diagram of an equivalent circuit of a pixel included in a light-emitting display device according to another embodiment.

[0034] Figure 4 is a schematic plan view showing the connection between a pixel driving unit and a light-emitting display device according to an embodiment.

[0035] Figure 5 is a schematic sectional view taken along line I-I' of the light-emitting display device in the embodiment of Figure 4 Figure 4

[0036] Figure 6 and Figure 7A as well as Figure 7B is a schematic diagram showing the effects of the embodiments of Figure 3 and Figure 4

[0037] Figure 8 、 Figure 9 and Figure 10 are schematic sectional views taken along line I-I' of light-emitting display devices according to other embodiments. Figure 4

[0038] Figure 11 is a schematic plan view showing the connection between a pixel driving unit and a light-emitting display device according to another embodiment.

[0039] Figure 12 is a schematic sectional view taken along line II-II' of a light-emitting display device according to another embodiment. Figure 11

[0040] Figure 13 is a schematic perspective view of an electronic device according to an embodiment.

[0041] Figure 14 is a schematic perspective view of a light-emitting display device included in an electronic device according to an embodiment.

[0042] Figure 15 is Figure 14 a schematic sectional view of the light-emitting display device.

[0043] Figure 16 is a schematic plan view showing the connection relationship between components of a light-emitting display device according to an embodiment.

[0044] Figure 17 is a block diagram of an electronic device according to an embodiment. Detailed Description of the Embodiments

[0045] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

[0046] The present invention can be implemented in many different forms and is not limited to the embodiments described herein.

[0047] To clearly explain the present invention, parts not relevant to the description are omitted, and the same or similar components are given the same reference numerals throughout the specification.

[0048] In addition, for convenience of explanation, the dimensions and thicknesses of each component shown in the drawings are arbitrarily shown, and thus the present invention is not necessarily limited to what is shown.

[0049] In the drawings, the thicknesses are exaggerated to clearly express the respective layers and regions.

[0050] Also, in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggerated.

[0051] In addition, when a part such as a layer, film, region, plate, or component is said to be "on" or "above" another part, this means not only that it is "directly on" the other part, but also that there are other parts therebetween.

[0052] Conversely, when a part is said to be "right on top of" another part, this means that there are no other parts therebetween.

[0053] In addition, "on" or "above" a reference part means being disposed above or below the reference part, and does not necessarily mean being disposed "on" or "above" the reference part in the direction opposite to gravity.

[0054] In addition, throughout the specification, when a part is said to "include" a certain component, unless otherwise clearly stated to the contrary, this means that it may also include other components, rather than excluding other components.

[0055] In addition, throughout the specification, when referring to "in a plan view", this means when observing the target part from above, and when referring to "in a cross-section", this means a cross-section obtained by vertically cutting the target part and observing it from the side.

[0056] In addition, throughout the specification, when "connected" is used, this means not only when two or more components are directly connected, but also when two or more components are indirectly connected through other components (they are physically connected). This may include not only cases of connection or electrical connection, but also cases where each part (referred to by different names according to position or function) is substantially connected to other parts.

[0057] In addition, throughout the specification, when a part such as a wiring, layer, film, region, plate, or component is said to "extend in a first direction or a second direction", this means not only a linear shape extending in that direction, but also a structure that extends as a whole in the first direction or the second direction, and also includes a structure that bends at some parts, has a serrated structure, or extends while including a bent structure.

[0058] In addition, an electronic device including a display device, a display panel, etc. described in the specification (e.g., a mobile phone, a television, a monitor, a notebook computer, etc.) or a display device, a display panel, etc. manufactured by the manufacturing method described in the specification is not excluded from the scope of rights herein.

[0059] The light-emitting display device may include a display area, and pixels may be provided in the display area.

[0060] Hereinafter, Figures 1 to 3 the circuit structure of a light-emitting diode LED and a pixel driving unit PC included in a pixel PX will be described.

[0061] For example, the pixel PX, the signal applied to the pixel PX, and the operation of the pixel PX will be described in detail according to the embodiments with reference to Figure 1 and Figure 2

[0062] Figure 1 is a schematic diagram of an equivalent circuit of a pixel PX included in a light-emitting display device according to an embodiment.

[0063] With reference to Figure 1 , the pixel PX may include a light-emitting diode LED and a pixel driving unit PC that drives the light-emitting diode LED. The pixel driving unit PC may include Figure 1 all elements other than the light-emitting diode LED in Figure 1 and the pixel driving unit PC of the pixel PX according to the embodiment of

[0064] For example, the pixel driving unit PC may include a first scan line 161 to which a first scan signal GW is applied, a second scan line 162 to which a second scan signal GC is applied, a third scan line 163 to which a third scan signal GR is applied, a fourth scan line 166 to which a fourth scan signal GI is applied, a light emitting signal line 164 to which a light emitting signal EM1 is applied, and a data line 171 to which a data voltage VDATA is applied.

[0065] For example, the pixel PX may be connected to a driving voltage line 172 to which a driving voltage (ELVDD; also referred to as a first driving voltage) is applied, a driving low voltage line 174 to which a driving low voltage (ELVSS; also referred to as a second driving voltage) is applied, a reference voltage line 173 to which a reference voltage Vref is applied, a first initialization voltage line 177 to which a first initialization voltage Vint is applied, and a second initialization voltage line 176 to which a second initialization voltage Vcint is applied. The circuit structure of the pixel is as follows, focusing on each element included in the pixel (e.g., transistors, capacitors, and light emitting elements).

[0066] The first transistor T1 (also referred to as a driving transistor hereinafter) may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the first transistor T1 may be connected to the first electrode of the first capacitor C1, the second electrode of the second transistor T2, and the second electrode of the fourth transistor T4. The first electrode (e.g., input side electrode) of the first transistor T1 may be connected to the second electrode of the third transistor T3 and the second electrode of the fifth transistor T5. The second electrode (e.g., output side electrode) of the first transistor T1 may be connected to the first electrode of the sixth transistor T6, the second electrode of the eighth transistor T8, the second electrode of the first capacitor C1, and the second electrode of the second capacitor C2.

[0067] The conduction degree of the first transistor T1 may be determined by the voltage of the gate electrode of the first transistor T1. The conduction degree of the first transistor T1 may adjust the magnitude of the current flowing from the first electrode to the second electrode of the first transistor T1. The current flowing from the first electrode to the second electrode of the first transistor T1 may be the same as the current flowing through the light emitting diode LED during the light emitting period, and may also be referred to as a light emitting current. For example, the first transistor T1 may be formed as an n-type transistor. As the voltage of the gate electrode increases, the light emitting current may increase. In the case of a large light emitting current, the light emitting diode LED may display high brightness.

[0068] The second transistor T2 (also referred to as a data input transistor hereinafter) may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the second transistor T2 may be connected to the first scan line 161 to which the first scan signal GW is applied. The first electrode (e.g., an input side electrode) of the second transistor T2 may be connected to the data line 171 to which the data voltage VDATA is applied. The second electrode (e.g., an output side electrode) of the second transistor T2 may be connected to the second electrode of the fourth transistor T4, the first electrode of the first capacitor C1, and the gate electrode of the first transistor T1. The second transistor T2 may transfer the data voltage VDATA to the pixel PX according to the first scan signal GW, may apply the data voltage VDATA to the gate electrode of the first transistor T1, and the data voltage VDATA may be stored in the first electrode of the first capacitor C1.

[0069] The third transistor T3 (also referred to as a first voltage transfer transistor or a second initialization voltage transfer transistor hereinafter) may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the third transistor T3 may be connected to the second scan line 162 to which the second scan signal GC is applied. The first electrode (e.g., an input side electrode) of the third transistor T3 may be connected to the second initialization voltage line 176 to which the second initialization voltage Vcint is applied. The second electrode (e.g., an output side electrode) of the third transistor T3 may be connected to the first electrode of the first transistor T1 and the second electrode of the fifth transistor T5. The third transistor T3 may transfer the second initialization voltage Vcint to the first transistor T1 without passing through the light emitting diode LED.

[0070] For example, the second initialization voltage Vcint may have a positive voltage value similar to the driving voltage ELVDD. According to an embodiment, the driving voltage ELVDD or a bias voltage (Vbias) may be applied instead of the second initialization voltage Vcint. In the case where current flows through the light emitting diode LED, the third transistor T3 may cause a problem that the light emitting diode LED emits light unnecessarily, and thus the second initialization voltage Vcint may be connected to the third transistor T3 through a separate path to transfer the second initialization voltage Vcint to the first transistor T1. Therefore, the third transistor T3 may not be turned on during the light emitting period, but may be turned on during other periods.

[0071] The fourth transistor T4 (also referred to as a reference voltage transfer transistor hereinafter) may include a gate electrode connected to a third scan line 163 to which a third scan signal GR is applied, a first electrode connected to a reference voltage line 173, and a second electrode connected to a first electrode of a first capacitor C1, a gate electrode of a first transistor T1, and a second electrode of a second transistor T2. The fourth transistor T4 may be used to initialize the gate electrode of the first transistor T1 by transferring a reference voltage Vref to the first electrode of the first capacitor C1 and the gate electrode of the first transistor T1.

[0072] The fifth transistor T5 (also referred to as a cathode connection transistor hereinafter) may include a gate electrode connected to a light emission signal line 164 to which a light emission signal EM1 is applied, a first electrode connected to a cathode of a light emitting diode LED and a second electrode of a seventh transistor T7, and a second electrode connected to a first electrode of the first transistor T1 and a second electrode of a third transistor T3. The fifth transistor T5 may provide a current path by connecting the first electrode of the first transistor T1 to the light emitting diode LED based on the light emission signal EM1, which enables the light emitting diode LED to emit light.

[0073] The sixth transistor T6 (also referred to as a driving low voltage application transistor hereinafter) may include a gate electrode connected to the light emission signal line 164 to which the light emission signal EM1 is applied, a first electrode connected to a second electrode of the first transistor T1, a second electrode of an eighth transistor T8, a second electrode of the first capacitor C1, and a second electrode of a second capacitor C2, and a second electrode receiving a driving low voltage ELVSS. The sixth transistor T6 may be used to transfer the driving low voltage ELVSS to the second electrode of the first transistor T1 or block the driving low voltage ELVSS from reaching the second electrode of the first transistor T1 based on the light emission signal EM1.

[0074] The seventh transistor T7 (also referred to as a second voltage transfer transistor hereinafter) may include a gate electrode connected to a second scan line 162 to which a second scan signal GC is applied, a first electrode (e.g., an input side electrode) connected to a second initialization voltage line 176 to which a second initialization voltage Vcint is applied, and a second electrode (e.g., an output side electrode) connected to the cathode of the light emitting diode LED and the first electrode of the fifth transistor T5. The seventh transistor T7 may be used to transfer the second initialization voltage Vcint to the cathode of the light emitting diode LED and may change the voltage level of the cathode of the light emitting diode LED to the second initialization voltage Vcint, thereby solving the problem that black cannot be clearly displayed due to the charge remaining on the cathode of the light emitting diode LED.

[0075] For example, the second initialization voltage Vcint may have a positive voltage value similar to the driving voltage ELVDD. In another example, the driving voltage ELVDD or the bias voltage (Vbias) may be used instead of the second initialization voltage Vcint.

[0076] The eighth transistor T8 (hereinafter referred to as the first initialization voltage transfer transistor) may include a gate electrode connected to the fourth scan line 166 to which a fourth scan signal GI is applied, a first electrode (e.g., an input-side electrode) connected to the first initialization voltage line 177 to which a first initialization voltage Vint is applied, and a second electrode (e.g., an output-side electrode) connected to the second electrode of the first transistor T1, the first electrode of the sixth transistor T6, the second electrode of the first capacitor C1, and the second electrode of the second capacitor C2. The eighth transistor T8 may be used to initialize the second electrode of the first transistor T1 by applying the first initialization voltage Vint to the second electrode of the first transistor T1, the first electrode of the sixth transistor T6, the second electrode of the first capacitor C1, and the second electrode of the second capacitor C2.

[0077] In Figure 1 an embodiment, all transistors may be formed as n-type transistors, and each transistor may be turned on when the voltage of the gate electrode is at a high level and turned off when the voltage of the gate electrode is at a low level.

[0078] For example, the semiconductor layer included in each transistor may be formed of polysilicon semiconductor or oxide semiconductor. In another example, the semiconductor layer included in each transistor may be formed of amorphous semiconductor or single-crystal semiconductor.

[0079] According to an embodiment, the semiconductor layer included in each transistor may further include an overlapping layer (or an additional gate electrode) overlapping with the gate electrode. For example, the characteristics of the transistor may be changed by applying a voltage to the overlapping layer (or the additional gate electrode) to improve the display quality of the pixel PX.

[0080] The first capacitor C1 may include a first electrode connected to the gate electrode of the first transistor T1, the second electrode of the second transistor T2, and the second electrode of the fourth transistor T4. The first capacitor C1 may include a second electrode connected to the second electrode of the first transistor T1, the first electrode of the sixth transistor T6, the second electrode of the eighth transistor T8, and the second electrode of the second capacitor C2. The first electrode of the first capacitor C1 may be used to receive and store the data voltage VDATA from the second transistor T2.

[0081] The second capacitor C2 may include a first electrode connected to a driving low-voltage line 174 to which a driving low voltage ELVSS is applied, and a second electrode connected to a second electrode of the first capacitor C1, a second electrode of the first transistor T1, a first electrode of the sixth transistor T6, and a second electrode of the eighth transistor T8. The second capacitor C2 may be used to keep the voltages of the second electrode of the first transistor T1 and the second electrode of the first capacitor C1 constant. For example, according to an embodiment, the first electrode of the second capacitor C2 may be connected to the driving voltage line 172. In another example, the second capacitor C2 may be omitted.

[0082] The light-emitting diode LED may include an anode connected to a driving voltage line 172 to which a driving voltage ELVDD is applied, and a cathode connected to a first electrode of the fifth transistor T5 and a second electrode of the seventh transistor T7. The cathode of the light-emitting diode LED may be connected to the first transistor T1 through the fifth transistor T5 turned on by a light-emitting signal EM1. The light-emitting diode LED may be disposed between the pixel driving unit PC and the driving voltage ELVDD such that the same current may flow through the first transistor T1 of the pixel driving unit PC, and the brightness of the light-emitting diode LED may be determined according to the magnitude of the current. The light-emitting diode LED may include a light-emitting layer disposed between the anode and the cathode and containing at least one of an organic light-emitting material and an inorganic light-emitting material. The specific stacked structure of the light-emitting diode LED according to an embodiment may be as Figure 5 shown in etc.

[0083] According to Figure 1 the embodiment of, the pixel PX may perform a compensation operation to detect a change in the characteristics (e.g., threshold voltage) of the first transistor T1 such that the display brightness may be constant regardless of the change in the characteristics of the first transistor T1. For example, in Figure 1 , the light-emitting diode LED may be disposed between the first electrode of the first transistor T1 and the driving voltage line 172.

[0084] The pixel PX according to the present embodiment is also referred to as an inverted pixel, which is different from a pixel PX in which a light-emitting element is disposed between the first transistor T1 and the driving low voltage ELVSS. The light-emitting diode LED may display brightness according to the magnitude of the current flowing through a current path from the driving voltage ELVDD through the first transistor T1 to the driving low voltage ELVSS. Therefore, as the current increases, the displayed brightness may increase. In Figure 1 the inverted pixel structure of, the first electrode of the first transistor T1 may be connected to the light-emitting diode LED and may be separated from the second electrode (e.g., source electrode) of the first transistor T1. This may have the advantage that the voltage of the second electrode (e.g., source electrode) of the first transistor T1 does not change when the voltage of each part of the pixel driving unit PC changes.

[0085] When the sixth transistor T6 is turned on, the voltage of the second electrode of the first capacitor C1 decreases, and the voltage of the first electrode of the first capacitor C1 also decreases, which causes the output current output by the first transistor T1 to decrease. However, in this embodiment, the problem of the decrease in the output current of the first transistor T1 can be prevented. This will be described in detail while explaining Figure 2 the operation.

[0086] In Figure 1 the embodiment, the pixel PX is described as including eight transistors T1 to T8 and two capacitors (for example, the first capacitor C1 and the second capacitor C2), but the embodiment is not limited thereto. In another example, additional capacitors or transistors may be included, and some capacitors or transistors may be omitted.

[0087] Above, the circuit structure of the pixel PX has been described through Figure 1 . Hereinafter, the waveforms of the signals applied to Figure 2 the pixel PX and the operations of the corresponding pixel PX will be described in detail with reference to Figure 1 .

[0088] Figure 2 is a waveform diagram showing the signals applied to Figure 1 the pixel PX.

[0089] Referring to Figure 2 , when the signals applied to the pixel PX are divided into a plurality of time periods, they are divided into an initialization period (or a reset period), a compensation period, a writing period, and a light emission period.

[0090] For example, the light emission period may be a period during which the light emitting diode LED emits light, and a gate conduction voltage (for example, a high-level voltage) may be applied by the light emission signal EM1 to turn on the fifth transistor T5 and the sixth transistor T6. For example, a gate cutoff voltage (for example, a low-level voltage) may be applied by the first scan signal GW, the second scan signal GC, the third scan signal GR, and the fourth scan signal GI. As a result, a current path can be formed between the driving voltage ELVDD and the driving low voltage ELVSS through the light emitting diode LED, the fifth transistor T5, the first transistor T1, and the sixth transistor T6. The magnitude of the current flowing through the current path can be determined by the degree of channel conduction of the first transistor T1, and the degree of channel conduction of the first transistor T1 can be determined by the voltage of the gate electrode of the first transistor T1 (or the first electrode of the first capacitor C1). Therefore, the output current generated according to the voltage of the gate electrode of the first transistor T1 can flow along the current path including the light emitting diode LED so that the light emitting diode LED can emit light.

[0091] In Figure 2The light emission period in which the light emission signal EM1 applies a gate-on voltage (e.g., a high-level voltage) is shown, but the light emission period may have the longest time. However, since the light emission period only performs the above simple operations, it only simply Figure 2 is depicted. As the light emission signal EM1 changes to a gate-off voltage (e.g., a low-level voltage), the light emission period may end and the initialization period may enter (or start).

[0092] Referring to Figure 2 , in the initialization period, the third scan signal GR may change to a gate-on voltage (e.g., a high-level voltage), and then the fourth scan signal GI may change to a gate-on voltage (e.g., a high-level voltage). For example, the first scan signal GW, the second scan signal GC, and the light emission signal EM1 may apply a gate-off voltage (e.g., a low-level voltage).

[0093] For example, the fourth transistor T4 connected to the third scan signal GR that changes to a gate-on voltage (e.g., a high-level voltage) and is applied may be turned on. Therefore, the gate electrode of the first transistor T1 may be set by the reference voltage Vref, and the first electrode of the first capacitor C1 may be initialized by the reference voltage Vref. For example, the reference voltage Vref may have a voltage value capable of turning on the first transistor T1.

[0094] For example, the fourth scan signal GI may also be applied while changing to a gate-on voltage (e.g., a high-level voltage) to turn on the eighth transistor T8, and as a result, the second electrode of the first transistor T1, the first electrode of the sixth transistor T6, the second electrode of the first capacitor C1, and the second electrode of the second capacitor C2 may be initialized by the first initialization voltage Vint.

[0095] For example, when the initialization period ends, the fourth scan signal GI may change to a gate-off voltage (e.g., a low-level voltage), and the compensation period starts.

[0096] Referring to Figure 2 , in the compensation period, the third scan signal GR may maintain a gate-on voltage (e.g., a high-level voltage), and the second scan signal GC may change to a gate-on voltage (e.g., a high-level voltage). For example, the first scan signal GW, the fourth scan signal GI, and the light emission signal EM1 may apply a gate-off voltage (e.g., a low-level voltage).

[0097] As the reference voltage Vref can continue to be transmitted to the gate electrode of the first transistor T1 and the first electrode of the first capacitor C1 through the turned-on fourth transistor T4, the third transistor T3 and the seventh transistor T7 can also be turned on by the second scan signal GC additionally applied with a gate turn-on voltage (e.g., a high-level voltage), and the second initialization voltage Vcint can be transmitted to the first electrode of the first transistor T1 and the cathode of the light-emitting diode LED.

[0098] For example, the first transistor T1 can be in an on state due to the reference voltage Vref, so the Vgs value of the first transistor can be the same as the threshold voltage (Vth) value of the first transistor T1. For example, Vgs is the value obtained by subtracting the voltage of the second electrode (e.g., the source electrode) of the first transistor T1 from the voltage of the gate electrode, so the voltage value of the second electrode (e.g., the source electrode) of the first transistor T1 can have a voltage value lower than the voltage of the gate electrode by the threshold voltage (Vth) of the first transistor T1 (e.g., Vref - Vth). For example, the turned-on seventh transistor T7 can change the voltage level of the cathode to the driving voltage ELVDD so that the voltage of the cathode can be initialized to the driving voltage ELVDD, thereby removing the remaining charge in the cathode and preventing the problem of being unable to display black.

[0099] For example, referring to Figure 2 , the second scan signal GC can be changed to a gate turn-off voltage (e.g., a low-level voltage), and then the third scan signal GR can also be changed to a gate turn-off voltage (e.g., a low-level voltage) and can enter (or start) the writing period. A gate turn-on voltage (e.g., a high-level voltage) can be applied by the first scan signal GW during the writing period.

[0100] For example, the period during which the first scan signal GW remains at the gate turn-on voltage can be 1H. 1H represents 1 horizontal cycle, and 1 horizontal cycle can correspond to one horizontal synchronization signal (Hsync). 1H can mean the time when the gate turn-on voltage is applied to the next row of scan lines after the gate turn-on voltage is applied to one scan line. For example, during the writing period, a gate turn-off voltage (e.g., a low-level voltage) can be applied by the second scan signal GC, the third scan signal GR, the fourth scan signal GI, and the light-emitting signal EM1.

[0101] During the writing period, the second transistor T2 to which a gate-on voltage (e.g., a high-level voltage) is applied can be turned on, and all other transistors can be turned off. As a result, the data voltage VDATA can be applied to the pixel PX and can be applied to the gate electrode of the first transistor T1 and the first electrode of the first capacitor C1. For example, similar to the compensation period, the voltage value of the second electrode of the first transistor T1 can be a voltage value (Vref - Vth) that is lower than the voltage of the gate electrode by the threshold voltage (Vth) of the first transistor T1.

[0102] For example, the third transistor T3 and the fifth transistor T5 can be turned off, so that the first electrode of the first transistor T1, the driving voltage line 172, and the light-emitting diode LED can be electrically separated.

[0103] For example, referring to Figure 2 , the light-emitting signal EM1 can be changed to a gate-on voltage (e.g., a high-level voltage), and the light-emitting period can be entered or started. For example, a gate-off voltage (e.g., a low-level voltage) can be applied by the first scan signal GW, the second scan signal GC, the third scan signal GR, and the fourth scan signal GI.

[0104] The fifth transistor T5 and the sixth transistor T6 can be turned on by the light-emitting signal EM1, and a current path can be formed from the driving voltage ELVDD through the light-emitting diode LED, the fifth transistor T5, the first transistor T1, and the sixth transistor T6 and connected to the driving low voltage ELVSS.

[0105] The magnitude of the current flowing through the current path can be determined by the on-state degree of the first transistor T1, and the on-state degree of the first transistor T1 can be determined by the magnitude of the data voltage VDATA applied to the gate electrode. The light-emitting diode LED can display different brightness according to the magnitude of the current (I OLED ) flowing through the current path.

[0106] During the light-emitting period (e.g., the starting point of the light-emitting period), the sixth transistor T6 can be turned on, and as a result, the voltage of the second electrode of the first capacitor C1 and the voltage of the second electrode of the first transistor T1 can be changed to the driving low voltage ELVSS. When the voltage value of the second electrode of the first capacitor C1 changes, the voltage value of the first electrode of the first capacitor C1 can change. For example, the voltage change value of the first electrode of the first capacitor C1 can be substantially equal to the voltage value of the second electrode of the first capacitor C1.

[0107] For example, during the writing period, the voltage value of the second electrode of the first transistor T1 and the voltage value of the second electrode of the first capacitor C1 can be changed from the reference voltage Vref value to the voltage value (Vref - Vth) obtained by subtracting the threshold voltage (Vth) of the first transistor T1 from the reference voltage Vref. Therefore, when changing from the writing period to the light-emitting period, the change value of the voltage of the second electrode of the first capacitor C1 and the change value ΔV of the voltage of the first electrode of the first capacitor C1 are as shown in Equation 1 below.

[0108] [Equation 1]

[0109] ΔV = V ELVSS – (Vref – V th )

[0110] Wherein, Vref can be the voltage value of the reference voltage Vref, Vth can be the threshold voltage value of the first transistor T1, and ELVSS can be the voltage value of the driving low voltage ELVSS.

[0111] For example, the current (I OLED ) flowing through the light-emitting diode LED during the light-emitting period can be obtained using Equation 2 below.

[0112] [Equation 2]

[0113] I OLED = k / 2x (Vgs – V th ) 2

[0114] = k / 2x [(V data + ΔV – V ELVSS ) – V th 2

[0115] = k / 2x [(V data + (V ELVSS – Vref + V th ) – V ELVSS ) – V th 2

[0116] = k / 2x (V data – Vref) 2

[0117] Here, k can be a constant value, Vdata can be the voltage value of the data voltage, Vref can be the voltage value of the reference voltage Vref, Vth can be the threshold voltage value of the first transistor T1, V ELVSS can be the voltage value of the driving low voltage ELVSS, Vgs can be the voltage difference between the gate electrode and the second electrode of the first transistor T1, and ΔV can be the value of Equation 1.​​

[0118] Therefore, the value of the current (I OLED ) flowing through the light-emitting diode LED can be determined only by the values of the data voltage VDATA and the reference voltage Vref, and can be independent of the threshold voltage (Vth) of the first transistor T1. Therefore, it can have the advantage of generating a constant output current (I OLED ) even with variations in the characteristics of the first transistor T1.

[0119] For example, as the driving low voltage ELVSS is applied during the light-emitting period, the voltage change value ΔV occurring at the gate electrode can also be removed as shown in Equation 1. Therefore, it is not necessary to consider it separately, and only the data voltage VDATA value and the reference voltage Vref need to be considered. This has the advantage that the current does not change according to the characteristics of the first transistor T1.

[0120] In the above, the voltage value of the driving voltage ELVDD can be set to be higher than the voltage value obtained by subtracting the threshold voltage value of the first transistor T1 from the reference voltage Vref, and the voltage value of the driving low voltage ELVSS can be set to be lower than the voltage value obtained by subtracting the threshold voltage value of the first transistor T1 from the reference voltage Vref.

[0121] In the above, the pixel PX according to Figure 1 and the operation of the waveform of Figure 2 are described.

[0122] Hereinafter, with reference to Figure 3 the circuit structure of the light-emitting diode LED and the pixel driving unit PC according to another embodiment will be described.

[0123] Figure 3 is a schematic diagram of an equivalent circuit of a pixel PX included in a light-emitting display device according to another embodiment. Referring to Figure 3 , the pixel PX may include a light-emitting diode LED and a pixel driving unit PC for driving the light-emitting diode LED.

[0124] The pixel driving unit PC may include Figure 3 all elements except the light-emitting diode LED, and according to Figure 3 the pixel driving unit PC of the pixel PX of the embodiment may include a first transistor T1, a second transistor T2, and a first capacitor C1.

[0125] For example, the pixel driving unit PC may be connected to the first scan line 161 to which the first scan signal GW is applied and the data line 171 to which the data voltage VDATA is applied. For example, the pixel PX may be connected to the driving voltage line 172 to which the driving voltage ELVDD (e.g., the first driving voltage) is applied and the driving low voltage line 174 to which the driving low voltage ELVSS (e.g., the second driving voltage) is applied. The circuit structure of the pixel is as follows, focusing on each element included in the pixel PX (e.g., transistors, capacitors, and light-emitting elements).

[0126] The first transistor T1 (e.g., the driving transistor) may include a gate electrode connected to the first electrode of the first capacitor C1 and the second electrode of the second transistor T2, a first electrode (e.g., the input-side electrode) connected to the cathode of the light-emitting diode LED, and a second electrode (e.g., the output-side electrode) receiving the driving low voltage ELVSS.

[0127] The conduction degree of the first transistor T1 may be determined according to the voltage of the gate electrode, and the conduction degree of the first transistor T1 may be determined by the current flowing from the first electrode of the first transistor T1 to the second electrode of the first transistor T1. The current flowing from the first electrode of the first transistor T1 to the second electrode may be the same as the current flowing through the light-emitting diode LED, and may also be referred to as the light-emitting current. For example, the first transistor T1 may be formed as an n-type transistor, and the higher the voltage of the gate electrode, the larger the light-emitting current that can flow. In the case of a large light-emitting current, the light-emitting diode LED may display high brightness.

[0128] The second transistor T2 (e.g., the data input transistor) may include a gate electrode connected to the first scan line 161 to which the first scan signal GW is applied, a first electrode (e.g., the input-side electrode) connected to the data line 171 to which the data voltage VDATA is applied, and a second electrode (e.g., the output-side electrode) connected to the first electrode of the first capacitor C1 and the gate electrode of the first transistor T1. The second transistor T2 may transfer the data voltage VDATA to the pixel PX according to the first scan signal GW, and may apply the data voltage VDATA to the gate electrode of the first transistor T1, thereby allowing the data voltage VDATA to be stored in the first electrode of the first capacitor C1.

[0129] All transistors may be formed as n-type transistors, and each transistor may be turned on when the voltage of the gate electrode is at a high level and turned off when the voltage of the gate electrode is at a low level. For example, the semiconductor layer included in each transistor may use polysilicon semiconductor or oxide semiconductor, and amorphous semiconductor or single-crystal semiconductor may also be used.

[0130] According to an embodiment, the semiconductor layer included in each transistor may further include an overlapping layer (or an additional gate electrode) that overlaps with the gate electrode, and by applying a voltage to the overlapping layer (or the additional gate electrode), the characteristics of the transistor can be changed to improve the display quality of the pixel.

[0131] The first capacitor C1 may include a first electrode connected to the gate electrode of the first transistor T1 and the second electrode of the second transistor T2, and a second electrode receiving the driving low voltage ELVSS. The first electrode of the first capacitor C1 may be used to receive and store the data voltage VDATA from the second transistor T2. According to an embodiment, the second electrode of the first capacitor C1 may receive the driving voltage ELVDD.

[0132] The light-emitting diode LED may include an anode connected to the driving voltage line 172 and receiving the driving voltage ELVDD, and a cathode connected to the first electrode of the first transistor T1. The light-emitting diode LED may be disposed between the pixel driving unit PC and the driving voltage ELVDD so that the same current can flow through the first transistor T1 of the pixel driving unit PC, and the brightness of the light-emitting diode LED can be determined according to the magnitude of the current. The light-emitting diode LED may include a light-emitting layer including at least one of an organic light-emitting material and an inorganic light-emitting material between the anode and the cathode. The specific stacked structure of the light-emitting diode LED according to the embodiment may be as Figure 5 shown in etc.

[0133] For example, in Figure 3 the light-emitting diode LED may be disposed between the first electrode of the first transistor T1 and the driving voltage line 172. The pixel PX according to the present embodiment is also referred to as an inverted pixel PX to distinguish it from a pixel PX in which a light-emitting element is disposed between the first transistor T1 and the driving low voltage ELVSS. The light-emitting diode LED may display brightness according to the magnitude of the current flowing through the current path from the driving voltage ELVDD through the first transistor T1 to the driving low voltage ELVSS. For example, as the current increases, the displayed brightness may increase.

[0134] In Figure 3 the embodiment of, the pixel PX is described as including two transistors T1 and T2 and one capacitor (e.g., the first capacitor C1), but the embodiment is not limited thereto, and according to an embodiment, a capacitor or a transistor may be included.

[0135] Hereinafter, pixels may be formed in the display area, and the planar structure of the light-emitting diode LED and the pixel driving unit PC according to an embodiment will be described with reference to Figure 4 is a schematic plan view showing the connection between the pixel driving unit and the light-emitting display device according to an embodiment.

[0136] Figure 4 is a schematic plan view showing the connection between the pixel driving unit and the light-emitting display device according to an embodiment.

[0137] Figure 4 shows a part of the display area, and the light-emitting area is the area where light is emitted by the light-emitting diodes LED. The light-emitting diodes LED may include light-emitting diodes corresponding to the three primary colors of light, and Figure 4 embodiments of may include a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode.

[0138] Each light-emitting diode LED may include an anode, a light-emitting layer, and a cathode. Below each light-emitting diode LED, there may be pixel driving units PCr, PCg, and PCb electrically connected to each light-emitting diode LED. In Figure 4 it, the pixel driving units PCr, PCg, and PCb are shown as dashed lines and are alternately arranged in the order of the red pixel driving unit PCr, the green pixel driving unit PCg, and the blue pixel driving unit PCb. The number and arrangement of these pixel driving units PCr, PCg, and PCb can be changed in various ways.

[0139] The pixel driving units PCr, PCg, and PCb may include a red pixel driving unit PCr, a green pixel driving unit PCg, and a blue pixel driving unit PCb. The red pixel driving unit PCr and the red light-emitting diode may be electrically connected through a red contact hole CNTr, the green pixel driving unit PCg and the green light-emitting diode may be electrically connected through a green contact hole CNTg, and the blue pixel driving unit PCb and the blue light-emitting diode may be electrically connected through a blue contact hole CNTb.

[0140] The light-emitting diodes LED may correspond to light-emitting areas (or overlapping with the light-emitting areas) corresponding to the openings OPr, OPg, and OPb of the pixel defining layer (see Figure 5 380-inor in ). Hereinafter, the explanation will be based on the light-emitting areas or the openings OPr, OPg, and OPb of the pixel defining layer rather than the light-emitting diodes LED.

[0141] Walls (see Figure 5 390 in ) may be provided on the pixel defining layer 380-inor, and the walls 390 may include openings OPcatr, OPcatg, and OPcatb corresponding to the openings OPr, OPg, and OPb of the pixel defining layer 380-inor. In Figure 4 it, the openings OPcatr, OPcatg, and OPcatb of the walls 390 may overlap with the openings OPr, OPg, and OPb of the pixel defining layer 380-inor and may be formed larger. According to an embodiment, the openings OPr, OPg, and OPb of the pixel defining layer 380-inor may be formed larger than the openings OPcatr, OPcatg, and OPcatb of the walls 390.

[0142] The wall 390 may be formed to include at least two layers made of a conductive material. The wall 390 may have a tip structure (e.g., a protruding tip structure or a tip portion), and the tip structure may be provided in the uppermost layer of the wall 390. Due to this tip structure, the layer provided on the top (or upper surface) of the wall 390 may be physically damaged without an additional etching process.

[0143] A separator SEP forming a closed curve may be formed outside the openings OPcatr, OPcatg, and OPcatb of the wall 390. The separator SEP may be formed in the wall 390 (or may pass through the wall 390), and may be formed as an empty space within the wall 390 as shown in Figure 5 or, as shown in Figure 9 , the space may be filled with an insulating material. The separator SEP may be formed such that the wall 390 can be electrically disconnected. The separator SEP may be formed up to an encapsulation layer provided on the top (or upper surface) of the wall 390 (see Encap in Figure 5 ), and may also be provided in the layer between the encapsulation layer Encap and the wall 390.

[0144] The openings OPr, OPg, and OPb of the pixel defining layer 380-inor and the openings OPcatr, OPcatg, and OPcatb of the wall 390 may be provided inside the separator SEP, thereby forming a closed curve. The cathodes of the light emitting diodes LED may also be provided inside the separator SEP, and adjacent cathodes may be electrically separated by the separator SEP. The cathodes provided inside the separator SEP may be electrically connected to at least a part of the wall 390 surrounding the cathodes, and the wall 390 may be connected to the transistors and contact holes CNTr, CNTg, and CNTb provided in the pixel driving parts PCr, PCg, and PCb such that the output current of the pixel driving parts PCr, PCg, and PCb can be transmitted to the cathodes of the light emitting diodes LED.

[0145] The contact holes CNTr, CNTg, and CNTb may also be provided in the pixel defining layer 380-inor to electrically connect the wall 390 and the pixel driving parts PCr, PCg, and PCb. For example, according to an embodiment, the wall 390 may be electrically connected to an anode which is an electrode of the light emitting diode. The specific stacking structure of the wall 390, the pixel defining layer 380-inor, and the separator SEP will be described in detail in Figure 5 etc.

[0146] For example, the separate cathode Cathodesl can be completely formed outside the separator SEP and can be formed throughout the entire display area. According to an embodiment, a voltage with a constant voltage level (e.g., the driving low voltage ELVSS) can be applied to the separate cathode Cathodesl. The separate cathode Cathodesl can have a mesh structure. The separate cathode Cathodesl can be electrically separated from the cathode through the separator SEP.

[0147] Referring to Figure 4 the embodiment of, the red opening OPr corresponding to the red light-emitting region of the pixel defining layer 380-inor and the green opening OPg corresponding to the green light-emitting region of the pixel defining layer 380-inor are each formed within the separator SEP (e.g., a single separator). However, the blue opening OPb corresponding to the blue light-emitting region of the pixel defining layer 380-inor can be formed in a plurality of ways within a single separator SEP, and in Figure 4 the embodiment of, includes two blue openings (OPb; each corresponding to a light-emitting region). For example, only one cathode included in the blue light-emitting diode LED can be formed corresponding to the two blue openings OPb, and this is because the cathode is separated by the separator SEP. For example, the cathode included in the blue light-emitting diode LED can be electrically connected to the blue pixel driving unit PCb through the contact hole CNTb, and the output current of the blue pixel driving unit PCb can be transmitted through the two blue openings OPb.

[0148] For example, in Figure 4 the adjacent separators SEP can be separated from each other. However, according to an embodiment, some adjacent separators SEP can have a connected structure.

[0149] Referring to Figure 5 will be described in detail the cross-sectional structure of the Figure 4 structure as described above.

[0150] Figure 5 is a schematic cross-sectional view showing Figure 4 the light-emitting display device in the embodiment of Figure 4 taken along the line I-I'.

[0151] In Figure 5 the red pixel can be centered, and the red pixel driving unit PCr can be connected to the cathode Cathoder of the light-emitting diode LED through the contact hole CNT r, and the structure in which the driving low voltage ELVSS is applied to the separate cathode Cathodesl is described in detail.

[0152] In Figure 5In this figure, only the structure disposed below the planarization layer 181 is briefly shown, and only one transistor is shown. A brief introduction to the structure from the substrate 110 to the planarization layer 181 is as follows.

[0153] The substrate 110 may include a material having a rigid property and being non-bendable, such as glass, or may include a bendable flexible material, such as plastic or polyimide. In the case of a flexible substrate, it may have a structure in which a double layer structure of polyimide and a barrier layer formed of an inorganic insulating material thereon is repeatedly formed.

[0154] The lower shielding layer BML1 containing metal may be disposed on the substrate 110, and the lower shielding layer BML1 may overlap with the channels of the transistors in the pixel driving parts PCr, PCg, and PCb included in the display unit in a plane. According to an embodiment, the lower shielding layer BML1 may be omitted.

[0155] The substrate 110 and the lower shielding layer BML1 may be covered by a buffer layer 111. The buffer layer 111 may be used to block the penetration of impurities into the first semiconductor layer ACT1, and may be an inorganic insulating layer containing silicon oxide (SiO x )、silicon nitride (SiN x ) or silicon oxynitride (SiON x ).

[0156] The first semiconductor layer ACT1 formed of polysilicon semiconductor (P-Si) or oxide semiconductor may be disposed on the buffer layer 111. The first semiconductor layer ACT1 may be a semiconductor layer in the pixel driving parts PCr, PCg, and PCb included in the display unit, and may include the channels of the transistors including driving transistors and the first region and the second region disposed on both sides (e.g., opposite sides) of the channels. For example, the transistor may be a driving transistor or another switching transistor included in the pixel driving parts PCr, PCg, and PCb.

[0157] For example, the first semiconductor layer ACT1 may include regions on both sides (e.g., opposite sides) of the channel having the characteristics of a conductive layer through plasma treatment or doping, and may be used as the first electrode and the second electrode of the transistor.

[0158] The first gate insulating layer 141 may be disposed on the first semiconductor layer ACT1. The first gate insulating layer 141 may be an inorganic insulating layer containing silicon oxide (SiO x )、silicon nitride (SiN x ) or silicon oxynitride (SiON x ). The first gate conductive layer including the gate electrode GE1 of the transistor disposed in the red pixel driving part PCr may be disposed on the first gate insulating layer 141.

[0159] In addition to the gate electrode GE1 of the transistor provided in the red pixel driving unit PCr, the first gate conductive layer may further include a scanning line, an emission control line, or a first electrode of a capacitor provided in the red pixel driving unit PCr.

[0160] After forming the first gate conductive layer, a plasma treatment or a doping process may be performed to make the exposed area of the first semiconductor layer ACT1 conductive. For example, the first semiconductor layer ACT1 covered by the gate electrode GE1 may be non-conductive, and the portion of the first semiconductor layer ACT1 not covered by the gate electrode GE1 may have the same characteristics as the conductive layer.

[0161] The second gate insulating layer 142 may be provided on the first gate conductive layer and the first gate insulating layer 141. The second gate insulating layer 142 may be an inorganic insulating layer including silicon oxide (SiO x ), silicon nitride (SiN x ), or silicon oxynitride (SiON x ). A second gate conductive layer including a second electrode of a capacitor provided in the red pixel driving unit PCr may be provided on the second gate insulating layer 142.

[0162] The second electrode of the capacitor may overlap with the first electrode of the capacitor or the gate electrode GE1 to form a capacitor provided in the red pixel driving unit PCr, and the first electrode of the capacitor may overlap with the gate electrode GE1 of the driving transistor, or it may be electrically connected or formed integrally.

[0163] The first interlayer insulating layer 151 may be provided on the second gate conductive layer. The first interlayer insulating layer 151 may include an inorganic insulating layer including silicon oxide (SiO x ), silicon nitride (SiN x ), or silicon oxynitride (SiON x ). According to an embodiment, the inorganic insulating layer may be formed thick.

[0164] A first data conductive layer including connection electrodes SE1 and DE1 and a driving low voltage line 174 may be provided on the first interlayer insulating layer 151. The first data conductive layer may include a metal or a metal alloy such as aluminum (Al), copper (Cu), molybdenum (Mo), or titanium (Ti), and may be composed of a single layer or multiple layers.

[0165] For example, the connection electrodes SE1 and DE1 may be connected to the transistors included in the red pixel driving unit PCr. For example, the connection electrode SE1 may be connected to the first region of the first semiconductor layer ACT1, and the connection electrode DE1 may be connected to the second region of the first semiconductor layer ACT1. For example, the connection electrode DE1 may be connected to the cathode Cathoder through the wall 390.

[0166] For example, the first data conductive layer may further include a driving low voltage line 174. The driving low voltage line 174 may transmit a driving low voltage ELVSS and may be transmitted to the separated cathode Cathodesl through the wall 390.

[0167] According to an embodiment, the driving low voltage line 174 may be formed by a lower shielding layer or a first gate conductive layer. For example, a connection electrode for transmitting the driving low voltage ELVSS may be provided in the first data conductive layer. For example, according to an embodiment, a first driving low voltage line may be provided in the first data conductive layer, and a second driving low voltage line may be provided in the lower shielding layer or the first gate conductive layer. For example, the extending direction of the first driving low voltage line may be perpendicular to the extending direction of the second driving low voltage line, the extending direction of the first driving low voltage line may be in the second direction DR2, and the extending direction of the second driving low voltage line may be in the first direction DR1.

[0168] A planarization layer 181 may be provided on the first data conductive layer. The planarization layer 181 may be an organic insulating layer containing an organic material, and the organic material may include one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0169] The pixel driving unit PC as described above may be formed on the substrate 110, and the planarization layer 181 may cover the top (or upper surface) of the pixel driving unit PC.

[0170] A structure including a light emitting diode LED and a separator SEP may be formed on the planarization layer 181. The structure above the planarization layer 181 is detailed as follows.

[0171] An anode Anode may be formed on the planarization layer 181. The anode Anode may form an electrode of the light emitting diode LED, and in an embodiment where the light emitting diode LED has an inverted pixel structure, a driving voltage ELVDD may be applied to the anode Anode. For example, the anode Anode may be electrically connected to a driving voltage line 172 to which the driving voltage ELVDD is applied or may be integrated with the driving voltage line 172. For example, the same driving voltage ELVDD may be applied to all anodes Anode.

[0172] A pixel defining layer 380-inor having a red opening OPr overlapping at least a part of the anode Anode may be provided on the planarization layer 181 and the anode Anode. The pixel defining layer 380-inor may be composed of an inorganic insulating layer containing an inorganic insulating material, and the inorganic insulating material for making the pixel defining layer 380-inor may include silicon oxide (SiO x ), silicon nitride (SiN x ), or silicon oxynitride (SiON x), and the pixel defining layer 380-inor may have a multi-layer structure including a plurality of layers made of an inorganic insulating material.

[0173] The planarization layer 181 and the pixel defining layer 380-inor may include contact holes CNTr and CNTsl that expose at least a part of the pixel driving unit PC disposed below the planarization layer 181. Refer to Figure 5 , the cathode contact hole (CNTr; also referred to as the first opening or the first contact hole hereinafter) may be formed in (or may pass through) the pixel defining layer 380-inor and the planarization layer 181, and may be included in the pixel driving unit PC. It may overlap a part of the connection electrode DE1 electrically connected to the electrode of the transistor in a plan view. For example, the contact hole for voltage transmission (CNTsl; also referred to as the second opening or the second contact hole hereinafter) may be formed in (or may pass through) the pixel defining layer 380-inor and the planarization layer 181 to provide a driving low voltage disposed in the pixel driving unit PC, and the contact hole CNTsl may overlap a part of the driving low voltage line 174 in a plan view.

[0174] The wall 390 may be disposed on the pixel defining layer 380-inor, and the wall 390 may include an opening OPCatr corresponding to the red opening OPr of the pixel defining layer 380-inor, and may also include a part of the separator SEP. For example, the opening OPCatr of the wall 390 may overlap the red opening OPr of the pixel defining layer 380-inor in a plan view, and may be formed to be larger.

[0175] The wall 390 may be formed to include at least two layers made of a conductive material, and the conductive material forming the wall 390 may include various metals and their alloys. The wall 390 may include metals or metal alloys such as aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), etc. Figure 5Embodiments may include lower conductive walls 390a and 390ac (hereinafter also referred to as the first conductive walls) and upper conductive walls 390b and 390bc (hereinafter also referred to as the second conductive walls). The lower conductive walls 390a and 390ac may be formed of a metal containing aluminum (Al), and the upper conductive walls 390b and 390bc may be formed of a metal containing titanium (Ti). The lower conductive walls 390a and 390ac and the upper conductive walls 390b and 390bc may be in contact with each other and are divided into electrically separated inner conductive walls (or first / inner walls) 390a and 390b and outer conductive walls (or second / outer walls) 390ac and 390bc. For example, the inner conductive walls 390a and 390b are portions that include and surround the opening OPcatr of the wall 390, and the outer conductive walls 390ac and 390bc are portions separated from the opening OPcatr of the wall 390. The inner conductive walls 390a and 390b and the outer conductive walls 390ac and 390bc may be electrically separated by a separator SEP, and the outer conductive walls 390ac and 390bc may have a structure that connects the entire area.

[0176] The inner conductive walls 390a and 390b may be divided into a lower inner conductive wall 390a (hereinafter referred to as the first inner conductive wall) and an upper inner conductive wall 390b (hereinafter referred to as the second inner conductive wall), and the outer conductive walls 390ac and 390bc may be divided into a lower outer conductive wall 390ac (hereinafter referred to as the first outer conductive wall) and an upper outer conductive wall 390bc (hereinafter referred to as the second outer conductive wall).

[0177] The lower conductive walls 390a and 390ac may be in contact with the upper conductive walls 390b and 390bc, and the side surfaces of the lower conductive walls 390a and 390ac may coincide (or be aligned) with the side surfaces of the upper conductive walls 390b and 390bc. The side surfaces of the lower conductive walls 390a and 390ac and the side surfaces of the upper conductive walls 390b and 390bc may not coincide (or may not be aligned) around the opening OPcatr of the wall 390. For example, among the inner conductive walls 390a and 390b, the side of the opening OPcatr of the wall 390 may have a tip structure in which the upper inner conductive wall 390b protrudes much more than the lower inner conductive wall 390a. Refer to Figure 5 , the side surface of the lower inner conductive wall 390a may have a structure that contacts the cathode Cathoder and may be electrically connected to the cathode Cathoder. For example, according to an embodiment, the side surfaces of the lower conductive walls 390a and 390ac and the side surfaces of the upper conductive walls 390b and 390bc may not coincide (or may not be aligned).

[0178] The inner conductive walls 390a and 390b can be electrically connected to a connection electrode DE1 that is electrically connected to an electrode of a transistor included in the pixel driving unit PC through a cathode contact hole CNTr formed in the pixel defining layer 380-inor and the planarization layer 181. As a result, the output current of the pixel driving unit PC can be transmitted to the cathode Cathoder through the inner conductive walls 390a and 390b.

[0179] The outer conductive walls 390ac and 390bc can be electrically connected to a driving low voltage line 174 provided in the pixel driving unit PC through a contact hole CNTsl for voltage transmission formed in the pixel defining layer 380-inor and the planarization layer 181. As a result, the driving low voltage ELVSS can be applied to the outer conductive walls 390ac and 390bc.

[0180] The light emitting layer EMLr can be disposed on the anode Anode inside the opening OPcatr of the wall 390. For example, a separate light emitting layer EMLri formed of the same material as the light emitting layer EMLr provided in the opening OPcatr of the adjacent wall 390 but separated therefrom and / or separate light emitting layers EMLgi and EMLbi corresponding to different colors from the light emitting layer EMLr provided in the opening OPcatr can be provided on the upper conductive walls 390b and 390bc. For example, only the separate light emitting layer EMLri formed of the same material as the light emitting layer EMLr provided in the opening OPcatr of the adjacent wall 390 can be provided on the upper inner conductive wall 390b, but the separate light emitting layers EMLgi and EMLbi corresponding to different colors from the light emitting layer EMLr provided in the opening OPcatr can also be provided on the top (or upper surface) of the upper outer conductive wall 390bc.

[0181] The light emitting layer EMLr and the separate light emitting layers EMLri, EMLgi, and EMLbi provided inside the opening OPcatr of the wall 390 can be separated by a tip structure using the upper inner conductive wall 390b protruding above the lower inner conductive wall 390a without a separate etching process.

[0182] The cathode Cathoder can be inside the opening OPcatr of the wall 390 and above the light emitting layer EMLr. For example, a separate cathode Cathodesl formed of the same material as the cathode Cathoder can be provided on the separate light emitting layers EMLri, EMLgi, and EMLbi.

[0183] The separate cathode Cathodesl can be separated by a tip structure in which the upper inner conductive wall 390b protrudes above the lower inner conductive wall 390a without a separate etching process.

[0184] The separated light-emitting layers EMLri, EMLgi, and EMLbi and the separated cathode Cathodesl can be disposed over the entire area of the upper conductive walls 390b and 390bc, and can also be disposed on the tip structure of the protruding upper inner conductive wall 390b. The separated light-emitting layers EMLri, EMLgi, and EMLbi and the separated cathode Cathodesl can be applied with the same voltage as that of the adjacent wall 390. For example, the portion of the separated cathode Cathodesl disposed above the inner conductive walls 390a and 390b can be electrically connected to the cathode Cathoder through the inner conductive walls 390a and 390b and the separated light-emitting layer EMLri, and can be connected to receive the output current of the pixel driving unit PC, and the portion of the separated cathode Cathodesl disposed above the outer conductive walls 390ac and 390bc can be connected to the outer conductive walls 390ac and 390bc and the separated light-emitting layers EMLri, EMLgi, and EMLbi, and the driving low voltage ELVSS can be transmitted through the separated light-emitting layers EMLri, EMLgi, and EMLbi.

[0185] For example, the angle of the light-emitting layer material stack can be different from the angle of the cathode material stack, and the angle at which the cathode material is stacked with respect to the third direction DR3 is the direction in which the light-emitting layer material is stacked, and it can be greater than the angle formed with respect to the third direction DR3. As a result, the material for the light-emitting layer EML can be formed by covering a large area by the tip structure of the upper inner conductive wall 390b, and the material of the cathode Cathoder can be formed by covering a relatively narrow area. Thus, as Figure 5 shown, the light-emitting layer EMLr disposed within the opening OPcatr of the wall 390 may not be completely formed on the side surface of the lower inner conductive wall 390a, but may be disposed centered on the anode, and the cathode Cathoder may be in contact with the side surface of the lower inner conductive wall 390a to be electrically connected to each other. By adjusting the angle at which the cathode material is formed, different from Figure 5 that, the separated cathode Cathodesl can be formed to have a structure connected to the cathode Cathoder without being separated from the cathode Cathoder.

[0186] The separated light-emitting layers EMLri, EMLgi, and EMLbi and the separated cathode Cathodesl can be separated by a separator SEP, and the separator SEP according to the Figure 5 embodiment can include the wall 390, the separated light-emitting layers EMLri, EMLgi, and EMLbi, the separated cathode Cathodesl, and the encapsulation layer Encap.

[0187] For example, referring to Figure 5In an embodiment, an encapsulation layer Encap may be formed on a cathode Cathoder and a separated cathode Cathodesl. After the encapsulation layer Encap is formed, a separator SEP may be formed by an etching process. The separator SEP may be used to separate the walls 390 and may span across the encapsulation layer Encap, the separated cathode Cathodesl, the separated light-emitting layers EMLri, EMLgi, and EMLbi, and the walls 390 (or extend along them), and may additionally be formed in a part of the pixel defining layer 380-inor.

[0188] According to Figure 5 The separator SEP according to an embodiment of may be formed as an empty space.

[0189] However, according to an embodiment, the empty space of the separator SEP may be filled with an insulating material, and according to an embodiment, the separator SEP may not be formed in the encapsulation layer Encap. Although a void is created by the separator SEP in a part of the encapsulation layer Encap, in this embodiment, the wall 390 may be formed of a conductive material so as to prevent air or moisture from penetrating into the light-emitting layer EMLr, thereby reducing the possibility of deterioration of the characteristics of the light-emitting layer. In Figure 5 In an embodiment of, the encapsulation layer Encap is shown as being relatively thin, but since it is etched to form the separator SEP, it may be formed to be partially thin, and according to an embodiment, it may be formed thicker than that shown in the drawings.

[0190] The above Figure 4 and Figure 5 Other features of the embodiments shown in will be described in detail by Figure 6 and Figure 7A as well as Figure 7B will be described in detail.

[0191] Figure 6 and Figure 7A as well as Figure 7B are schematic diagrams showing Figure 3 and Figure 4 the effects of the embodiments of.

[0192] For example, in Figure 6 , it is shown that a separated cathode Cathodesl provided on outer conductive walls 390ac and 390bc may be provided on the encapsulation layer Encap and may form a structure having a capacitance of a sensing electrode 540 that allows a light-emitting display device to detect a touch. In Figure 6 , the sensing electrode 540 is shown as floating in the air, but this is because an intermediate layer is omitted, and an encapsulation layer and various insulating layers may be provided therebetween.

[0193] As Figure 6As shown, the sensing electrode 540 for detecting touch may be disposed on the front surface of the light-emitting display device. The sensing electrode 540 may be connected to the inner conductive walls 390a and 390b and the separated cathodes Cathodesl disposed thereon to prevent problems caused by changes in the output current of the pixel driving unit PC. For example, a voltage having a constant voltage level may be applied to the outer conductive walls 390ac and 390bc and the separated cathodes Cathodesl disposed thereon. For example, by applying the driving low voltage ELVSS, voltage fluctuations of the sensing electrode 540 may be reduced and noise may be prevented from entering from the outside. As a result, the sensing operation of the light-emitting display device may have the advantage of becoming more accurate.

[0194] For example, in Figure 7A and Figure 7B in this embodiment, a voltage may be applied through the outer conductive walls 390ac and 390bc which are parts of the wall 390 instead of the voltage lines, so that the voltage lines disposed adjacent to the pixel driving unit PC may be used. The advantage of improving the resolution by removing the same area is described.

[0195] For example, Figure 7A a comparative example is shown, and Figure 7B an embodiment is shown.

[0196] In Figure 7A which is a comparative example, a reference voltage line 173 and a driving low voltage line 174 extending in the second direction DR2 and three pixel driving units PCr, PCg, and PCb are shown.

[0197] In Figure 7B the embodiment, the driving low voltage line 174 may be omitted, and the corresponding part may form an idle space Spc. Since the corresponding idle space Spc is removed, the adjacent pixel driving units PCr, PCg, and PCb may be formed to be disposed closer. As a result, a light-emitting display device having the same area may be formed to have a higher resolution.

[0198] For example, referring to Figure 7B , the idle space Spc may extend in the first direction DR1. This may include a first voltage line to which the same voltage is applied and which extends in the second direction DR2, and a second voltage line which extends in the first direction DR1. For example, the first voltage line and the second voltage line may be disposed in different conductive layers (or formed as different conductive layers). For example, the driving low voltage line 174 may be divided into a first driving low voltage line extending in the second direction DR2 and a second driving low voltage line extending in the first direction DR1. The first driving low voltage line may be disposed in the first data conductive layer (or formed as the first data conductive layer), and the second driving low voltage line may be disposed in the lower shielding layer (or formed as the lower shielding layer).

[0199] In this embodiment, two voltage lines can be removed, and as a result, the idle space Spc extending in the first direction DR1 can be removed and formed to have an increased density. As a result, a light-emitting display device having the same area can be formed to have a higher resolution.

[0200] In the above, attention has been focused on Figure 4 and Figure 5 the embodiments of.

[0201] In the following, various modified embodiments will be observed through Figures 8 to 12 ...

[0202] Figures 8 to 10 ... is a schematic cross-sectional view taken along the line I-I' of a light-emitting display device according to other embodiments. Figure 4 ...

[0203] Embodiments of... will be described. Figure 8 ...

[0204] Figure 8 ... is Figure 5 a modified example of... and, unlike the embodiment of..., the separator SEP may not be formed as an empty space, but the space may be filled with an organic material. Figure 5 ...

[0205] In the embodiment of... Figure 8 the separator SEP may be formed in a columnar shape of an organic material. In another example, the separator SEP may be formed of an inorganic material instead of an organic material. According to the separator SEP of... Figure 8 ..., compared with the separator SEP formed as an empty space, the property of blocking the inflow of moisture or air into the light-emitting layer EML can be further improved. For example, although the separator SEP is formed in the encapsulation layer Encap, in the case of being filled with an insulating material, compared with the separator SEP in... Figure 5 which is an empty space, no air or moisture can penetrate into the separator SEP, so the separator SEP may have the characteristic of being easy to protect the light-emitting layer.

[0206] Next, embodiments of... will be described. Figure 9 ...

[0207] In the embodiment of... Figure 9 a transparent electrode PLEC may be additionally formed on the encapsulation layer Encap and the separator SEP filled with an insulating material as shown in... Figure 8 For example, the transparent electrode PLEC may be formed of a transparent conductive material such as indium tin oxide (ITO), poly-ITO, indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and indium tin zinc oxide (ITZO).

[0208] The transparent electrode PLEC can be formed over the entire surface. The transparent electrode PLEC can be electrically connected to the outer conductive walls 390ac and 390bc through the opening CNTp that passes through the separated light-emitting layers EMLri, EMLgi, and EMLbi, the separated cathodes Cathodesl, and the encapsulation layer Encap.

[0209] Since the outer conductive walls 390ac and 390bc are connected to the driving low-voltage line 174 through the contact holes CNTsl, the driving low-voltage ELVSS can be applied to the transparent electrode PLEC.

[0210] According to Figure 9 the embodiment shown in Figure 6 the noise affecting the sensing electrode (refer to 540 in Figure 6 ) can be completely shielded or blocked by the transparent electrode PLEC that receives the driving low-voltage ELVSS. For example, as shown in Figure 9 , in the case where the sensing electrode 540 is provided, the output current of the pixel driving unit PC applied to the inner conductive walls 390a and 390b and the separated cathode Cathodesl can cause noise to be applied to the sensing electrode 540. However, in Figure 6 , the transparent electrode PLEC can be below the sensing electrode (refer to 540 in Figure 6 ) and can be provided across the front of the inner conductive walls 390a and 390b and the separated cathode Cathodesl. Therefore, the sensing electrode (refer to 540 in Figure 6 ) can be electrically separated and shielded from the inner conductive walls 390a and 390b and the separated cathode Cathodesl by the transparent electrode PLEC, thereby preventing noise from entering the sensing electrode (refer to 540 in

[0211] Next, the embodiment of Figure 10 will be described.

[0212] In Figure 10 the embodiment of Figure 5 , different from the example where the pixel defining layer 380-inor is formed of an inorganic insulating material, the pixel defining layer 380 can be formed of an organic insulating material.

[0213] The pixel defining layer 380 containing an organic insulating material can be composed of a single layer, but in Figure 10 the embodiment of

[0214] According to Figure 10The pixel defining layer 380 of the embodiment may include a first pixel defining layer 380-orb (hereinafter also referred to as a black pixel defining layer), a second pixel defining layer 380-pl (hereinafter also referred to as an intermediate pixel defining layer), and a third pixel defining layer 380-ort (hereinafter also referred to as a transparent pixel defining layer).

[0215] The first pixel defining layer 380-orb may be black to prevent light transmission. According to an embodiment, the first pixel defining layer 380-orb may be formed of a negative-type black organic material. The black organic material may include a light-blocking material, and the light-blocking material may include carbon black, carbon nanotubes, a resin or paste containing a black dye, metal particles such as nickel, aluminum, molybdenum, and their alloys, metal oxide particles, and / or metal nitrides (e.g., chromium nitride). The first pixel defining layer 380-orb may contain a light-blocking material and may contain black, and may have the property of absorbing / blocking light rather than reflecting light. Since a negative-type organic material is used, the first pixel defining layer 380-orb may have the property of removing the portion covered by the mask.

[0216] The second pixel defining layer 380-pl may be a temporary protective layer to protect the first pixel defining layer 380-orb during the process, and may be made of silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiON x ), etc. For example, the second pixel defining layer 380-pl may be an inorganic insulating layer. For example, according to an embodiment, the second pixel defining layer 380-pl may contain an organic material. For example, the second pixel defining layer 380-pl may also be used to improve the contact characteristics between the first pixel defining layer 380-orb and the third pixel defining layer 380-ort.

[0217] The third pixel defining layer 380-ort may have the property of allowing light to pass through, and according to an embodiment, the third pixel defining layer 380-ort may be formed of a positive-type photosensitive organic insulating material. As an example, photosensitive polyimide (PSPI) may be used. Since the third pixel defining layer 380-ort has a positive property, the portion not covered by the mask may be removed. The third pixel defining layer 380-ort may be transparent so that light can be transmitted and / or reflected.

[0218] The third pixel defining layer 380-ort may be used as a spacer and may also be used as a contact assist between the first pixel defining layer 380-orb and the light-emitting layer EMLr.

[0219] The second pixel defining layer 380-pl and the third pixel defining layer 380-ort may be formed to have a width narrower than that of the first pixel defining layer 380-orb. For example, in Figure 10In the embodiment, the red opening OPr of the pixel defining layer 380 may be disposed in the first pixel defining layer 380-orb, and the second pixel defining layer 380-pl and the third pixel defining layer 380-ort may include openings wider than the red opening OPr.

[0220] According to an embodiment, the second pixel defining layer 380-pl may be omitted, and the pixel defining layer 380 may be formed only by the first pixel defining layer 380-orb and the third pixel defining layer 380-ort.

[0221] Figure 10 The embodiment of Figure 5 differs from the embodiment of

[0222] in that the pixel defining layer 380 is formed of an organic material, and all other features may be substantially the same. Figure 11 Below, we will observe Figure 11 is a schematic plan view showing the connection between a pixel driving unit and a light-emitting display device according to another embodiment.

[0223] In Figure 11 the anodes Anode-r, Anode-g, and Anode-b according to an embodiment are additionally shown in the Figure 4 plan view of

[0224] Refer to Figure 11In an embodiment, the boundaries of the red anode Anode-r of the red light-emitting diode, the green anode Anode-g of the green light-emitting diode, and the blue anode Anode-b of the blue light-emitting diode may be set between the separator SEP and the openings OPcatr, OPcatg, and OPcatb of the wall 390. As a result, each of the anodes Anode-r, Anode-g, and Anode-b may overlap the openings OPcatr, OPcatg, and OPcatb of the wall 390 and the openings OPr, OPg, and OPb of the pixel defining layer 380 in a plane. For example, the red anode Anode-r of the red light-emitting diode and the green anode Anode-g of the green light-emitting diode may each overlap the openings OPr and OPg of the pixel defining layer 380 in a plan view, but the blue anode Anode-b of the blue light-emitting diode may overlap the two blue openings OPb of the pixel defining layer 380. For example, the blue anode Anode-b of the blue light-emitting diode may have a structure that does not overlap the contact hole CNTb provided between the two blue openings OPb of the pixel defining layer 380. For example, the blue anode Anode-b of the blue light-emitting diode may include an extension Anode-b1 that overlaps each blue opening OPb of the pixel defining layer 380 in a plan view, and a connection portion Anode-b2 that connects the extensions Anode-b1, and the connection portion Anode-b2 may have a structure that does not overlap the contact hole CNTb in a plan view. The position and shape of the connection portion Anode-b2 that connects the two extensions Anode-b1 may vary according to the embodiment.

[0225] Next, embodiments will be described. Figure 12 of Figure 12 is a schematic cross-sectional view taken along line II-II' of a light-emitting display device according to another embodiment. Figure 11 of the light-emitting display device.

[0226] Figure 12 The embodiment of Figure 8 is a modified example of

[0227] In Figure 12 the embodiment of

[0228] In Figure 12In the embodiment, the encapsulation layer Encap may be formed over the separator SEP, the separated cathodes Cathodesl, and the cathode Cathoder.

[0229] Since the separator SEP is not formed in (or does not pass through) the encapsulation layer Encap, the effect of preventing moisture and air from entering the light-emitting layer EML from the outside can be improved.

[0230] Hereinafter, through Figures 13 to 17 focusing on the embodiments, the structure of the electronic device in which the above light-emitting display device can be used and the structure of other parts of the light-emitting display device will be described.

[0231] Figure 13 is a schematic perspective view of an electronic device according to an embodiment.

[0232] Referring to Figure 13 , the electronic device 1 may be an electronic device providing a display screen capable of displaying moving images or still images in the third direction DR3. For example, the electronic device 1 may include a television, a notebook computer, etc., a monitor, a billboard, an Internet of Things device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an e-book, a portable multimedia player (PMP), a navigation system, a game console, a digital camera, a video camera, etc. that provide a display screen.

[0233] As Figure 14 shown, the electronic device 1 may include a cover window WIN and a housing HM, and a light-emitting display device 10 disposed inside the cover window WIN and the housing HM. Accordingly, the cover window WIN and the housing HM may be combined to form the exterior of the electronic device 1.

[0234] The cover window WIN may include an insulating panel. For example, the cover window WIN may be made of glass, plastic, or a combination thereof. According to an embodiment, the cover window WIN may include a touch detection unit capable of detecting a touch.

[0235] The front surface of the cover window WIN may define the front surface of the electronic device 1.

[0236] The housing HM may be coupled to the cover window WIN. The cover window WIN may be placed on the front surface of the housing HM.

[0237] The housing HM may be coupled to the cover window WIN to provide an accommodation space. The light-emitting display device 10 may be accommodated in the accommodation space provided between the housing HM and the cover window WIN.

[0238] The housing HM may include a material having relatively high rigidity. For example, the housing HM may include a frame and / or a plate made of glass, plastic, metal, or a combination thereof. The housing HM may have a back surface and side surfaces, a cover window WIN may be disposed on an upper portion of the housing HM, and a light-emitting display device 10 may be accommodated in an internal space formed by the housing HM and the cover window WIN. Accordingly, components of the light-emitting display device 10 can be reliably protected from external impacts.

[0239] The electronic device 1 may include a light-emitting display device that provides a display screen in a third direction DR3 (refer to Figure 14 10 in ). The display device included in the electronic device 1 may be various display devices such as an inorganic light-emitting display device, an organic light-emitting display device, and a quantum dot light-emitting display device. Hereinafter, the description will focus on a case where a light-emitting display device including an organic light-emitting element is applied as an example of the display device, but the embodiments are not limited thereto, and the same technical concept can be applied to other display devices.

[0240] The shape of the electronic device 1 can be modified in various ways. For example, the electronic device 1 may have a shape such as a long rectangle, a square, a square with rounded corners, other polygons, or a circle. The shape of the display area DA of the electronic device 1 may also be similar to the overall shape of the electronic device 1. In Figure 13 , the electronic device 1 is shown as having a rectangular shape with a relatively long length in a first direction DR1, but the embodiments are not limited thereto.

[0241] The electronic device 1 may include a display area DA and a non-display area NDA. Figure 13 The display area DA and the non-display area NDA shown in may correspond to the display area DA and the non-display area NDA of the light-emitting display device 10. The display area DA may be an area where a screen is displayed, and the non-display area NDA may be an area where a screen is not displayed. The display area DA may occupy most of the area centered around a central portion of the electronic device 1, and the non-display area NDA may have a structure surrounding the periphery of the display area DA.

[0242] The display area DA may include a first display area DA1, a second display area DA2, and a third display area DA3. The second display area DA2 and the third display area DA3 may be areas where components such as sensors or cameras added to provide various functions to the electronic device 1 may be disposed on a surface (e.g., a surface disposed at a bottom thereof in a third direction DR3), and the second display area DA2 and the third display area DA3 may correspond to (or overlap with) the component areas.

[0243] The second display area DA2 and the third display area DA3 can be surrounded by the first display area DA1. Except for the first display area DA1, the second display area DA2 and the third display area DA3 can display images. The positions and numbers of the second display area DA2 and the third display area DA3 can vary according to the embodiments.

[0244] Hereinafter, reference will be made to Figure 14 describe the structure of a light-emitting display device as an example of a display device.

[0245] Figure 14 is a schematic perspective view of a light-emitting display device included in an electronic device according to an embodiment.

[0246] Refer to Figure 14 According to an embodiment, the electronic device 1 may include a light-emitting display device 10. The light-emitting display device 10 may display a screen on the electronic device 1 and may detect or take a picture of the front of the electronic device 1. The light-emitting display device 10 may have a planar shape similar to the planar shape of the electronic device 1. For example, the light-emitting display device 10 may have a shape similar to a rectangle having sides in a first direction DR1 and sides in a second direction DR2. The edge portion where the sides in the first direction DR1 intersect the sides in the second direction DR2 may be rounded to have a certain curvature, but the embodiment is not limited thereto and may also be formed as a right angle. The planar shape of the light-emitting display device 10 is not limited to a square shape and may be similar to other polygonal, circular, or elliptical shapes.

[0247] The light-emitting display device 10 may include a display panel 100, a display driver 200, a circuit board 300, and a touch driver 400.

[0248] The display panel 100 may include a main area MA and a sub-area SBA.

[0249] The main area MA may include a display area DA including pixels for displaying an image, and a non-display area NDA provided around the display area DA. The display area DA may include a first display area DA1, a second display area DA2, and a third display area DA3. The second display area DA2 and the third display area DA3 not only include pixels, but also components such as sensors or cameras may be provided below in a third direction DR3, and the second display area DA2 and the third display area DA3 may correspond to (or overlap with) component areas.

[0250] The display area DA can emit light in a third direction DR3 from a light-emitting area corresponding to a light-emitting diode LED. For example, the display panel 100 can include a pixel circuit portion including transistors, and a pixel defining layer 380 including a light-emitting diode LED and having an opening defining the light-emitting area of the light-emitting diode LED. For example, the light-emitting diode LED can include an organic light-emitting diode including an organic light-emitting layer, a quantum dot light-emitting diode including a quantum dot light-emitting layer (e.g., quantum dot LED), an inorganic light-emitting diode including an inorganic semiconductor (e.g., inorganic LED), and a micro light-emitting diode. The light-emitting diode LED can include at least one device (e.g., micro LED), but the embodiments are not limited thereto.

[0251] The non-display area NDA can be an area outside the display area DA and surrounding the display area DA. The non-display area NDA can be defined as an edge area of the main area MA of the display panel 100. The non-display area NDA can include a gate driver (e.g., Figure 16 210 in ) that supplies a gate signal to a gate line, and fan-out lines connecting the display driver 200 and the display area DA.

[0252] The sub-area SBA can be an area extending from one side of the main area MA. The sub-area SBA can include a flexible material capable of bending, folding, curling, etc. For example, when the sub-area SBA is bent, the sub-area SBA can overlap the main area MA in the thickness direction (e.g., the third direction DR3). The sub-area SBA can include the display driver 200 and a pad portion connected to the circuit board 300. In another embodiment, the sub-area SBA can be omitted, and the display driver 200 and the pad portion can be placed in the non-display area NDA.

[0253] The display driver 200 can output signals and voltages for driving the display panel 100. The display driver 200 can supply a data voltage to a data line. The display driver 200 can supply a power voltage to a power line and supply a gate control signal to the gate driver 210. The display driver 200 can be formed of an integrated circuit (IC) and mounted on the display panel 100 using a chip-on-glass (COG) method, a chip-on-plastic (COP) method, or an ultrasonic bonding method. For example, the display driver 200 can be disposed in the sub-area SBA and can overlap the main area MA in the thickness direction (e.g., the third direction DR3) by bending the sub-area SBA. As another example, the display driver 200 can be mounted on the circuit board 300.

[0254] The circuit board 300 can be attached to the pad portion of the display panel 100 using an anisotropic conductive film (ACF). The leads of the circuit board 300 can be electrically connected to the pad portion of the display panel 100. The circuit board 300 can be a flexible printed circuit board or a flexible film (such as chip-on-film). In addition, the circuit board 300 can be a rigid printed circuit board.

[0255] The touch driver 400 can be mounted on the circuit board 300. The touch driver 400 can be electrically connected to the touch sensor included in the electronic device 1. The touch driver 400 can supply a touch driving signal to the sensing electrodes of the touch driver 400 (refer to Figure 6 540 in Figure 6 ), and sense the change in capacitance between the sensing electrodes (refer to Figure 6 540 in

[0256] Hereinafter, the cross-sectional structure of the light-emitting display device 10 will be described with reference to Figure 15 FIG.

[0257] Figure 15 is Figure 14 a schematic cross-sectional view of the light-emitting display device.

[0258] Referring to Figure 15 FIG., the display panel 100 can include a display layer DU and an external light reduction layer CFL.

[0259] The display layer DU can include a substrate SUB, a driving unit layer TFTL, a light-emitting layer EML, and a cover encapsulation layer TFEL. The substrate SUB can be a base substrate or a base member. The substrate SUB can be a flexible substrate capable of being bent, folded, curled, etc. For example, the substrate SUB can include a polymer resin such as polyimide (PI), but the embodiments are not limited thereto. In another embodiment, the substrate SUB can include a glass material or a metal material.

[0260] The driving unit layer TFTL may be disposed on the substrate SUB. The driving unit layer TFTL may include transistors and capacitors that form pixel circuit units for outputting and transmitting current to the light-emitting elements. The driving unit layer TFTL may include gate lines, data lines, power lines, gate control lines, fan-out lines connecting the display driver 200 to the data lines, and leads connecting the display driver 200 to the pad portion. Each transistor may include a semiconductor including a channel region, a source region, and a drain region, and a gate electrode disposed on one side of the semiconductor. For example, the source region and the drain region of the semiconductor may serve as the source electrode (e.g., the first electrode) and the drain electrode (e.g., the second electrode) of the transistor, respectively. For example, in the case where the gate driver (e.g., Figure 16 210 in Figure 16 ) is formed on one side of the non-display area NDA of the display panel 100, the gate driver (e.g., 210 in ) may include transistors.

[0261] The driving unit layer TFTL may be disposed in the display area DA, the non-display area NDA, and the sub-area SBA. The transistors, gate lines, data lines, and power lines of the driving unit layer TFTL may be disposed in the display area DA. The gate control lines and fan-out lines of the driving unit layer TFTL may be disposed in the non-display area NDA. The leads of the driving unit layer TFTL may be disposed in the sub-area SBA.

[0262] The light-emitting layer EML may include a light-emitting diode LED and a corresponding light-emitting region, and may be disposed on the driving unit layer TFTL. The light-emitting layer EML may include a light-emitting diode that emits light including a first electrode, a second electrode, and an emission layer, and a pixel defining layer 380 having an opening that defines the light-emitting region. The light-emitting layer EML may be disposed in the display area DA. In an embodiment, the light-emitting layer EML may be an organic light-emitting layer including an organic material. A functional layer including at least one of an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer may be disposed on both sides (e.g., opposite sides) of the light-emitting layer EML. For example, the combination of the light-emitting layer EML and the functional layer may be referred to as an intermediate layer. In the case where the first electrode receives a voltage through the transistor of the driving unit layer TFTL and the second electrode receives a driving low voltage, holes and electrons are respectively transmitted through the hole transport layer and the electron transport layer, and the holes and electrons may move to the light-emitting layer EML that is an organic light-emitting layer and may combine with each other in the light-emitting layer EML to emit light. For example, one of the first electrode and the second electrode may be an anode, and the other may be a cathode.

[0263] In another embodiment, the light-emitting diode LED may be a quantum dot light-emitting diode including a quantum dot light-emitting layer, an inorganic light-emitting diode including an inorganic semiconductor, or a micro light-emitting diode.

[0264] The covering encapsulation layer TFEL can cover the top surface and the side surfaces of the light-emitting layer EML, and can prevent external moisture and air from entering the light-emitting layer EML. The covering encapsulation layer TFEL can include at least one inorganic layer and at least one organic layer to encapsulate the light-emitting layer EML.

[0265] The external light reduction layer CFL can be disposed on the covering encapsulation layer TFEL. The external light reduction layer CFL can include color filters corresponding to each of the light-emitting regions. For example, a light-blocking layer can be disposed between the color filters adjacent to the external light reduction layer CFL or in an overlapping portion where the adjacent color filters overlap. The light-blocking layer can be disposed above or below the color filters in the third direction DR3, or can be disposed on both sides (e.g., opposite sides).

[0266] Since the external light reduction layer CFL is disposed (e.g., directly disposed) on the covering encapsulation layer TFEL, the light-emitting display device 10 may not require a separate substrate for the external light reduction layer CFL. For example, a polarizer may not be attached to the top (or upper surface) of the external light reduction layer CFL. As a result, the thickness of the light-emitting display device 10 can be relatively small. For example, since the light-emitting display device 10 does not include a polarizer, there may be a disadvantage that external light is directly reflected, but the reflection of external light can be reduced by the color filters or the light-blocking layer included in the external light reduction layer CFL. For example, the color filters can selectively transmit light of a specific wavelength and block or absorb light of other wavelengths, and the light-blocking layer can absorb external light, so that the amount of external light flowing into the light-emitting display device 10 can be changed, and the amount of reflected light can also be reduced, thereby reducing the disadvantage caused by the reflection of external light.

[0267] According to an embodiment, the light-emitting display device 10 may further include an optical device 500. The optical device 500 can be disposed on the back surface of the second display region DA2 or the third display region DA3. The optical device 500 can emit or receive light in the infrared, ultraviolet, and visible light wavelength bands. For example, the optical device 500 can be an optical sensor that detects light incident on the light-emitting display device 10, such as a proximity sensor, an illuminance sensor, a camera sensor, or an image sensor.

[0268] Hereinafter, reference will be made to Figure 16 to describe in detail the connection relationship of the components included in the light-emitting display device 10.

[0269] Figure 16 is a schematic plan view showing the connection relationship between the components of the light-emitting display device according to an embodiment.

[0270] Referring to Figure 16 , the display layer DU of the light-emitting display device 10 can include a display region DA and a non-display region NDA.

[0271] The display area DA may be set at the center portion of the display panel 100. The unit pixels PX, gate lines GL, data lines DL, and power lines VL may be arranged in the display area DA. Each of the unit pixels PX may be the smallest unit that emits light, and may include a pixel circuit unit including a transistor and a capacitor, and a light-emitting element that receives current from the pixel circuit unit.

[0272] Each unit pixel PX may be connected to the gate line GL, data line DL, and power line VL, and the gate line GL and power line VL may each include a plurality of lines.

[0273] The gate line GL may supply the gate signal received from the gate driver 210 to the unit pixel PX. The gate line GL may extend in the first direction DR1 and may be spaced apart from each other in the second direction DR2 intersecting the first direction DR1.

[0274] The data line DL may supply the data voltage received from the display driver 200 to the unit pixel PX. The data line DL may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0275] The power line VL may supply the power voltage received from the display driver 200 to the unit pixel PX. For example, the power voltage may be at least one of a driving voltage, an initialization voltage, a reference voltage, and a driving low voltage, and these power voltages may be transmitted to the unit pixel PX. The power line VL may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0276] The non-display area NDA may surround the display area DA. The gate driver 210, fan-out line FOL, and gate control line GCL may be provided in the non-display area NDA.

[0277] The gate driver 210 may generate a gate signal based on the gate control signal and sequentially supply the gate signal to the gate line GL in a certain order.

[0278] The fan-out line FOL may extend from the display driver 200 to the display area DA. The fan-out line FOL may supply the data voltage received from the display driver 200 to the data line DL.

[0279] The gate control line GCL may extend from the display driver 200 to the gate driver 210. The gate control line GCL may supply the gate control signal received from the display driver 200 to the gate driver 210.

[0280] Refer to Figure 16 The light-emitting display device 10 may further include a sub-region SBA.

[0281] The sub-region SBA may include a display driver 200, a pad region PA, and a first touch pad region TPA1 and a second touch pad region TPA2.

[0282] The display driver 200 may output signals and voltages for driving the display panel 100 to the fan-out lines FOL. The display driver 200 may supply data voltages to the data lines DL through the fan-out lines FOL. The data voltages may be supplied to the unit pixels PX, and the brightness of the unit pixels PX may be controlled. The display driver 200 may supply gate control signals to the gate driver 210 through the gate control lines GCL.

[0283] The pad region PA, the first touch pad region TPA1, and the second touch pad region TPA2 may be provided at the edge portion of the sub-region SBA. The pad region PA may include a display pad portion DP. The display pad portion DP may be connected to the graphics system through the circuit board 300. The display pad portion DP may be connected to the circuit board 300 to receive digital video data and may supply the digital video data to the display driver 200. The first touch pad region TPA1 and the second touch pad region TPA2 may each include a plurality of touch pads TP1 and TP2 and may be connected to a touch driver 400 provided on the circuit board 300 so as to enable them to detect touches. The pad region PA, the first touch pad region TPA1, and the second touch pad region TPA2 may be electrically connected to the circuit board 300 using materials such as anisotropic conductive films or self-assembled anisotropic conductive pastes (SAP).

[0284] In the following Chinese, an embodiment of one of the electronic devices including the light-emitting display device according to the present embodiment will be described with reference to Figure 17 Describe an embodiment of one of the electronic devices including the light-emitting display device according to the present embodiment.

[0285] Figure 17 is a block diagram of an electronic device according to an embodiment.

[0286] The electronic device 1 may output various information through the display module MD2 using an operating system. In the case where the processor PROC executes an application program stored in the memory MM, the display module MD2 may provide application program information to the user through the display panel MD21. For example, the display panel MD21 may be the above-described light-emitting display device.

[0287] The processor PROC can obtain external inputs through the input module MD1 or the sensor module MD41 and can execute application programs corresponding to the external inputs. For example, when the user selects the camera icon displayed on the display panel MD21, the processor PROC can obtain the user input through the input sensor MD41-2 and can activate the camera module MD51. The processor PROC can transmit the image data corresponding to the captured image obtained through the camera module MD51 to the display module MD2. The display module MD2 can display the image corresponding to the captured image through the display panel MD21.

[0288] As another example, when performing personal information authentication in the display module MD2, the fingerprint sensor MD41-1 can obtain the input fingerprint information as input data. The processor PROC compares the input data obtained through the fingerprint sensor MD41-1 with the authentication data stored in the memory MM and executes the application program according to the comparison result. The display module MD2 can display the information executed according to the logic of the application program through the display panel MD21. As another example, when selecting the music streaming icon displayed on the display module MD2, the processor PROC can obtain the user input through the input sensor MD41-2 and can activate the music streaming application program stored in the memory MM. When a music play command is input in the music streaming application program, the processor PROC can activate the sound output module MD43 to provide the user with sound information matching the music play command.

[0289] Above, the operations of the electronic device 1 have been briefly described. Below, the configuration of the electronic device 1 will be described in detail. Some of the components of the electronic device 1 to be described later may be integrated and provided as a single component, or a single component may be separately provided in two or more components.

[0290] Refer to Figure 17 , the electronic device 1 can communicate with the external electronic device 2 through a network (e.g., a short-range wireless communication network or a long-range wireless communication network). According to an embodiment, the electronic device 1 may include a processor PROC, a memory MM, an input module MD1, a display module MD2, a power module MD3, an embedded module MD4, and an external module MD5. According to an embodiment, in the electronic device 1, at least one of the above components may be omitted, or one or more other components may be added. According to an embodiment, some of the above components (e.g., the sensor module MD41, the antenna module MD42, or the sound output module MD43) may be connected to another component (e.g., the display module MD2).

[0291] The processor PROC can execute software to control at least one other component (e.g., a hardware or software component) of the electronic device 1 connected to the processor PROC and perform various data processing or calculations. According to an embodiment, as part of the data processing or operation, the processor PROC can store commands or data received from other components (e.g., the input module MD1, the sensor module MD41, or the communication module MD53) in the volatile memory MM1, process the commands or data stored in the volatile memory MM1, and the result data can be stored in the non-volatile memory MM2.

[0292] The processor PROC can include a main processor MPROC and an auxiliary processor SPROC. The main processor MPROC can include a central processing unit MPROC-1, e.g., a central processing unit (CPU) and / or an application processor (AP). The main processor MPROC can also include a graphics processing unit MPROC-2, e.g., a graphics processing unit (GPU), a communication processor (CP), and / or an image signal processor (ISP). The main processor MPROC can also include a neural network processing unit MPROC-3, e.g., a neural network processing unit (NPU). The neural network processing unit can be a processor specialized for processing artificial intelligence models, and the artificial intelligence models can be created through machine learning. The artificial intelligence models can include multiple artificial neural network layers. The artificial neural network can include a deep neural network (DNN), a convolutional neural network (CNN), a recurrent neural network (RNN), a restricted Boltzmann machine (RBM), a deep belief network (DBN), a bidirectional recurrent deep neural network (BRDNN), and a deep Q network, or a combination of two or more of the above, but the embodiments are not limited to the above examples. In addition to the hardware structure, the artificial intelligence models can additionally or alternatively include a software structure. At least two of the above processing units and processors can be implemented in an integrated configuration (e.g., a single chip), or each can be implemented in an independent configuration (e.g., multiple chips).

[0293] The auxiliary processor SPROC may include a controller SPROC-1. The controller SPROC-1 may include an interface conversion circuit and a timing control circuit. The controller SPROC-1 may receive a video signal from the main processor MPROC, convert the data format of the video signal to match the interface specification with the display module MD2, and output video data. The controller SPROC-1 may output various control signals required to drive the display module MD2. The auxiliary processor SPROC may also include a data conversion circuit SPROC-2, a gamma correction circuit SPROC-3, and a rendering circuit SPROC-4. The data conversion circuit SPROC-2 may receive image data from the controller SPROC-1 and compensate the image data so that the image can be displayed at a selected brightness according to the characteristics of the electronic device 1 or user settings or power consumption, and may convert the image data to reduce or compensate for afterimages. The gamma correction circuit SPROC-3 may convert the image data or the gamma reference voltage so that the image displayed on the electronic device 1 has a desired gamma characteristic. The rendering circuit SPROC-4 may receive image data from the controller SPROC-1 and render the image data in consideration of the pixel arrangement applied to the display panel MD21 of the electronic device 1. At least one of the data conversion circuit SPROC-2, the gamma correction circuit SPROC-3, and the rendering circuit SPROC-4 may be integrated into another component (e.g., the main processor MPROC or the controller SPROC-1). At least one of the data conversion circuit SPROC-2, the gamma correction circuit SPROC-3, and the rendering circuit SPROC-4 may be integrated into a data driver MD23 to be described later.

[0294] The memory MM may store various data used by at least one component of the electronic device 1 (e.g., the processor PROC or the sensor module MD41) and input data or output data for instructions related thereto. The memory MM may include at least one of a volatile memory MM1 and a non-volatile memory MM2.

[0295] The input module MD1 may receive (e.g., from a user or an external electronic device 2) commands or data to be used in components of the electronic device 1 (e.g., the processor PROC, the sensor module MD41, or the sound output module MD43) from the outside of the electronic device 1.

[0296] The input module MD1 may include a first input module MD11 through which commands or data are input by a user, and a second input module MD12 through which commands or data are input from an external electronic device 2. The first input module MD11 may include a microphone, a mouse, a keyboard, a button (e.g., a push button), or a pen (e.g., a passive pen or an active pen). The second input module MD12 may support a specified protocol for wired or wireless connection to the external electronic device 2. According to an embodiment, the second input module MD12 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, a secure digital (SD) card interface, or an audio interface. The second input module MD12 may include a connector physically connected to the external electronic device 2, such as an HDMI connector, a USB connector, an SD card connector, or an audio connector (e.g., a headphone connector).

[0297] The display module MD2 may visually provide information to a user. The display module MD2 may include a display panel MD21, a scan driver MD22, and a data driver MD23.

[0298] The display module MD2 may further include a window, a chassis, and a bracket to protect the display panel MD21.

[0299] The display panel MD21 may include a liquid crystal display panel, an organic light-emitting display panel, or an inorganic light-emitting display panel, and the type of the display panel MD21 is not limited. The display panel MD21 may be of a rigid type or a flexible type capable of being curled or folded. The display module MD2 may further include a support, a bracket, or a heat dissipation member for supporting the display panel MD21.

[0300] The scan driver MD22 may be mounted on the display panel MD21 as a driving chip. For example, the scan driver MD22 may be integrated into the display panel MD21. For example, the scan driver MD22 may include an amorphous silicon thin-film transistor (TFT) gate driver circuit (ASG), a low-temperature polycrystalline silicon (LTPS) TFT gate driver circuit, or an oxide semiconductor TFT gate driver circuit (OSG) embedded in the display panel MD21. The scan driver MD22 may receive a control signal from the controller SPROC-1 and may output a scan signal to the display panel MD21 in response to the control signal.

[0301] The display panel MD21 may further include a light-emitting driver. The light-emitting driver may output a light-emitting control signal to the display panel MD21 in response to a control signal received from the controller SPROC-1. The light-emitting driver may be formed separately from the scan driver MD22 or may be integrated into the scan driver MD22.

[0302] The data driver MD23 can receive a control signal from the controller SPROC-1, and can convert image data into an analog voltage (e.g., data voltage) in response to the control signal, and then can output the data voltage to the display panel MD21.

[0303] The data driver MD23 can be integrated into other components (e.g., the controller SPROC-1). The functions of the interface conversion circuit and the timing control circuit of the above-mentioned controller SPROC-1 can be integrated into the data driver MD23.

[0304] The display module MD2 can also include a light-emitting driver and a voltage generation circuit. The voltage generation circuit can output various voltages required to drive the display panel MD21.

[0305] The power module MD3 can supply power to the components of the electronic device 1. The power module MD3 can include a battery that charges a power voltage. The battery can include a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell. The power module MD3 can include a power management integrated circuit (PMIC). The PMIC can supply optimized power to each of the above-mentioned modules and the following modules. The power module MD3 can include a wireless power transmission / reception component electrically connected to the battery.

[0306] The wireless power transmission / reception component can include a coil-shaped antenna radiator.

[0307] The electronic device 1 can also include an embedded module MD4 and an external module MD5. The embedded module MD4 can include a sensor module MD41, an antenna module MD42, and a sound output module MD43. The external module MD5 can include a camera module MD51, a light module MD52, and a communication module MD53.

[0308] The sensor module MD41 can detect an input from the user's body or an input from a pen among the first input modules MD11, and generate an electrical signal or a data value corresponding to the input. The sensor module MD41 can include at least one of a fingerprint sensor MD41-1, an input sensor MD41-2, and a digital converter MD41-3.

[0309] The fingerprint sensor MD41-1 can generate a data value corresponding to the user's fingerprint. The fingerprint sensor MD41-1 can include an optical fingerprint sensor and a capacitive fingerprint sensor.

[0310] The input sensor MD41-2 can generate a data value corresponding to the coordinate information of the input through the user's body or the pen. The input sensor MD41-2 can generate the amount of change in capacitance caused by the input as a data value. The input sensor MD41-2 can detect an input through a passive pen, or transmit and receive data with an active pen.

[0311] The input sensor MD41-2 can also measure vital signs, such as blood pressure, moisture, or body fat. For example, when a user touches a part of the body to the sensor layer or the sensing panel and does not move during a certain period of time, the input sensor MD41-2 can detect a bio-signal based on a change in the electric field caused by that part of the body. Accordingly, the information desired by the user can be output to the display module MD2.

[0312] The digital converter MD41-3 can generate a data value corresponding to the coordinate information input by the pen. The digital converter MD41-3 can generate the electromagnetic change caused by the input as a data value. The digital converter MD41-3 can detect an input from a passive pen or transmit and receive data with an active pen.

[0313] At least one of the fingerprint sensor MD41-1, the input sensor MD41-2, and the digital converter MD41-3 can be implemented as a sensor layer formed on the display panel MD21 through a continuous process. The fingerprint sensor MD41-1, the input sensor MD41-2, and the digital converter MD41-3 can be disposed on the upper side of the display panel MD21. For example, the digital converter MD41-3 can be disposed below the display panel MD21.

[0314] At least two of the fingerprint sensor MD41-1, the input sensor MD41-2, and the digital converter MD41-3 can be formed through the same process to be integrated into one sensing panel. In the case of being integrated into a single sensing panel, the sensing panel can be placed between the display panel MD21 and a window disposed above the display panel MD21. According to an embodiment, the sensing panel can be placed on the window, and the position of the sensing panel is not limited.

[0315] At least one of the fingerprint sensor MD41-1, the input sensor MD41-2, and the digital converter MD41-3 can be embedded in the display panel MD21. For example, through the process of forming the elements (e.g., light-emitting elements, transistors) included in the display panel MD21, the fingerprint sensor MD41-1, the input sensor MD41-2, and the digital converter MD41-3, at least one of them can be formed simultaneously.

[0316] For example, the sensor module MD41 can generate an electrical signal or a data value corresponding to the internal state or the external state of the electronic device 1. The sensor module MD41 can include a gesture sensor, a gyro sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, a bio-sensor, a temperature sensor, a humidity sensor, or an illuminance sensor.

[0317] The antenna module MD42 may include one or more antennas for transmitting or receiving signals or power from the outside. According to an embodiment, the communication module MD53 may transmit signals to or receive signals from the external electronic device 2 through an antenna suitable for the communication method. The antenna pattern of the antenna module MD42 may be integrated into a single component of the display module MD2 (e.g., the display panel MD21) or the input sensor MD41-2.

[0318] The sound output module MD43 may be a device for outputting a sound signal to the outside of the electronic device 1. For example, it may include a speaker for general purposes such as multimedia playback or recording playback, and a receiver dedicated to answering calls. According to an embodiment, the receiver may be integrally formed with the speaker or formed separately. The sound output mode of the sound output module MD43 may be integrated into the display module MD2.

[0319] The camera module MD51 may capture still images and videos. According to an embodiment, the camera module MD51 may include one or more lenses, an image sensor, or an image signal processor. The camera module MD51 may also include an infrared camera capable of measuring the presence or absence of a user, the position of the user, and the user's gaze.

[0320] The lamp module MD52 may provide light. The lamp module MD52 may include a light-emitting diode LED or a xenon lamp. The lamp module MD52 may operate in cooperation with the camera module MD51 or independently.

[0321] The communication module MD53 may support or provide a wired or wireless communication channel between the electronic device 1 and the external electronic device 2, and communicate through the established communication channel. The communication module MD53 may include any one or all of a wireless communication module such as a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module and a wired communication module such as a local area network (LAN) communication module or a power line communication module. The communication module MD53 may connect to the external electronic device 2 through a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA) or a long-range communication network such as a cellular network, the Internet, or a computer network (e.g., LAN or WAN). The above various types of communication modules MD53 may be implemented on a single chip or on multiple separate chips.

[0322] The input module MD1, the sensor module MD41, the camera module MD51, etc. may be used to control the operation of the display module MD2 in cooperation with the processor PROC.

[0323] The processor PROC can output commands or data to the display module MD2, the sound output module MD43, the camera module MD51, or the light module MD52 based on the input data received from the input module MD1. For example, the processor PROC can generate image data in response to the input data applied through a mouse or an active pen and output the image data to the display module MD2, or can generate command data in response to the input data and output the command data to the camera module MD51 or the light module MD52. In the case where the processor PROC does not receive input data from the input module MD1 for a certain period of time, the processor PROC can switch the operation mode of the electronic device 1 to a low power mode or a sleep mode to reduce the power consumed by the electronic device 1.

[0324] The processor PROC can output commands or data to the display module MD2, the sound output module MD43, the camera module MD51, or the light module MD52 based on the sensing data received from the sensor module MD41. For example, the processor PROC can compare the authentication data authorized by the fingerprint sensor MD41-1 with the authentication data stored in the memory MM, and then execute an application according to the comparison result. The processor PROC can execute commands or output corresponding image data to the display module MD2 based on the sensing data detected by the input sensor MD41-2 or the digital converter MD41-3. In the case where the sensor module MD41 can include a temperature sensor, the processor PROC can receive temperature data for the temperature measured from the sensor module MD41, and also perform brightness correction etc. on the image data based on the temperature data.

[0325] The processor PROC can receive measurement data regarding the presence or absence of a user, the position of the user, the gaze of the user, etc. from the camera module MD51. The processor PROC can also perform brightness correction etc. on the image data based on the measurement data. For example, the processor PROC that determines the presence or absence of a user through the input from the camera module MD51 can output the brightness-corrected image data to the display module MD2 through the data conversion circuit SPROC-2 or the gamma correction circuit SPROC-3.

[0326] Some of the above components can use communication methods between peripheral devices (such as a bus, general-purpose input / output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), or ultra path interconnect (UPI)), and they can be connected to each other through a link and can exchange signals (e.g., commands or data) with each other. The processor PROC can communicate with the display module MD2 through an interface agreed upon by both parties. For example, any of the above communication methods can be used, and the embodiments are not limited to the above communication methods.

[0327] The electronic device 1 according to various embodiments disclosed herein may be various types of devices. The electronic device 1 may include, for example, at least one of a portable communication device (e.g., a smart phone), a computer device, a portable multimedia device, a portable medical device, a camera, a wearable device, or a home appliance. The electronic device 1 according to an embodiment herein is not limited to the above-described devices.

[0328] Upon concluding the detailed description, those skilled in the art will recognize that many changes and modifications can be made to the embodiments without substantially departing from the principles and spirit and scope of the disclosure. Accordingly, the disclosed embodiments are used only in a general and descriptive sense and not for purposes of limitation.

Claims

1. A light-emitting display device, comprising: A pixel driving unit, wherein the pixel driving unit includes a transistor; a planarization layer, wherein the planarization layer covers the pixel driving unit; an anode of a light emitting diode, wherein the anode of the light emitting diode is arranged on the planarization layer; a pixel defining layer including an opening overlapping the anode of the light emitting diode in a plan view and comprising an inorganic insulating material; a wall including an opening overlapping the opening of the pixel defining layer and having conductivity; a light-emitting layer, the light-emitting layer being disposed in the opening of the pixel defining layer; a cathode of the light emitting diode, wherein the cathode of the light emitting diode is arranged on the light emitting layer; as well as a separator, the separator dividing the wall into a first wall and a second wall, wherein the first wall is electrically connected to the transistor of the pixel driving part through a first contact hole passing through the pixel defining layer and the planarization layer, and The cathode of the light emitting diode is in contact with a side surface of the first wall and is electrically connected to the transistor.

2. The light-emitting display device according to claim 1, wherein: The first wall includes a first conductive wall and a second conductive wall disposed on the first conductive wall, and The second conductive wall has a tip portion protruding from the first conductive wall.

3. The light-emitting display device according to claim 2, wherein: The tip portion protrudes toward the opening of the first wall overlapping the opening of the pixel defining layer.

4. The light-emitting display device according to claim 3, wherein: The first conductive wall comprises aluminum, and the second conductive wall comprises titanium.

5. The light-emitting display device according to claim 3, wherein: The first wall is an inner conductive wall, The second wall is an outer conductive wall, The inner conductive wall surrounds the opening of the pixel defining layer in a plan view, The outer conductive wall is electrically separated from the inner conductive wall, The inner conductive wall includes a first inner conductive wall and a second inner conductive wall disposed on the first inner conductive wall, and The outer conductive wall includes a first outer conductive wall and a second outer conductive wall disposed on the first outer conductive wall.

6. The light-emitting display device according to claim 5, wherein: The inner conductive wall is electrically connected to the transistor of the pixel driving part through the first contact hole, and The outer conductive wall receives a constant voltage through a second contact hole penetrating the pixel defining layer and the planarization layer.

7. The light-emitting display device according to claim 6, wherein: A separated light emitting layer and a separated cathode are respectively formed on the outer conductive wall and separated from the light emitting layer and the cathode by the separation member.

8. The light-emitting display device according to claim 1, further comprising: an encapsulation layer covering the wall and the cathode, wherein The separator includes an empty space passing through the encapsulation layer and the wall.

9. The light-emitting display device according to claim 8, wherein: The empty space of the separator is filled with an insulating material.

10. The light-emitting display device according to claim 9, further comprising: a transparent electrode formed of a transparent conductive material and disposed on the encapsulation layer and the separator, and A constant voltage is applied to the transparent electrode.

11. The light-emitting display device according to claim 1, further comprising: an encapsulation layer covering the wall and the cathode, The separator passes through the wall and is disposed between the first wall and the second wall, and The encapsulation layer is disposed on the separation member.

12. A light-emitting display device, comprising: A pixel driving unit, wherein the pixel driving unit includes a transistor; a planarization layer, wherein the planarization layer covers the pixel driving unit; an anode of a light emitting diode, wherein the anode of the light emitting diode is arranged on the planarization layer; a pixel defining layer, the pixel defining layer comprising an opening overlapping the anode of the light emitting diode in a plan view, the pixel defining layer comprising a black pixel defining layer and a transparent pixel defining layer; a wall including an opening overlapping the opening of the pixel defining layer and having conductivity; a light-emitting layer, the light-emitting layer being disposed in the opening of the pixel defining layer; a cathode of the light emitting diode, wherein the cathode of the light emitting diode is arranged on the light emitting layer; as well as a separator, the separator dividing the wall into a first wall and a second wall, wherein the first wall is electrically connected to the transistor of the pixel driving part through a first contact hole passing through the pixel defining layer and the planarization layer, The cathode of the light emitting diode is in contact with a side surface of the first wall and is electrically connected to the transistor, The black pixel defining layer is formed of a black organic material or an organic material containing a light blocking material, and The transparent pixel defining layer is formed of a light-transmitting photosensitive organic insulating material.

13. The light emitting display device according to claim 12, wherein: The pixel defining layer further includes an intermediate pixel defining layer, and The intermediate pixel defining layer is an inorganic insulating layer and is disposed between the black pixel defining layer and the transparent pixel defining layer.

14. The light emitting display device according to claim 12, wherein: The first wall includes a first conductive wall and a second conductive wall disposed on the first conductive wall. The second conductive wall has a tip portion protruding from the first conductive wall, and The tip portion protrudes toward the opening of the first wall overlapping the opening of the pixel defining layer.

15. The light emitting display device according to claim 14, wherein: The first conductive wall comprises aluminum, and the second conductive wall comprises titanium.

16. The light emitting display device according to claim 14, wherein: The first wall is an inner conductive wall, The second wall is an outer conductive wall, The inner conductive wall surrounds the opening of the pixel defining layer in a plan view, The outer conductive wall is electrically separated from the inner conductive wall, The inner conductive wall comprises a first inner conductive wall and a second inner conductive wall disposed on the first inner conductive wall. The outer conductive wall comprises a first outer conductive wall and a second outer conductive wall disposed on the first outer conductive wall, The inner conductive wall is electrically connected to the transistor of the pixel driving part through the first contact hole, and The outer conductive wall receives a constant voltage through a second contact hole penetrating the pixel defining layer and the planarization layer.

17. The light emitting display device according to claim 16, wherein: A separated light emitting layer and a separated cathode are respectively formed on the outer conductive wall and separated from the light emitting layer and the cathode by the separation member.

18. The light-emitting display device according to claim 12, further comprising: an encapsulation layer covering the wall and the cathode, wherein The separator includes an empty space passing through the encapsulation layer and the wall.

19. The light emitting display device according to claim 18, wherein: The empty space of the separator is filled with an insulating material.

20. The light-emitting display device according to claim 12, further comprising: an encapsulation layer covering the wall and the cathode, The separator passes through the wall and is disposed between the first wall and the second wall, and The encapsulation layer is disposed on the separation member.

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