Application of prismatic table-like lens, silicon-based OLED (Organic Light Emitting Diode) display device and preparation method

By applying a ridge-like desktop lens in silicon-based OLED display devices, the sides are hemispherical curved surfaces and the top is planes, the problem of the lens brightness decreases with the increase of the viewing angle in the prior art, and the effect of keeping the brightness unchanged within the specified viewing angle range is achieved, and the viewing angle stability is improved.

CN120076639APending Publication Date: 2025-05-30LAKESIDE LIGHTNING SEMICONDUCTOR (JIANGSU) CO
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Patent Information

Application Number
CN202510058643.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-15
Publication Date
2025-05-30

AI Technical Summary

Technical Problem

The brightness of the hemispherical lens in the prior art will gradually decrease with the increase of the viewing angle, resulting in poor viewing angle stability.

Method used

A ridge-like table lens is used, with a hemispherical curved side and a plane top to ensure that the brightness remains unchanged within the specified viewing angle range (±20°~±60°).

Benefits of technology

Through the design of a ridge-like table lens, the stability of the viewing angle is improved, ensuring that the brightness does not attenuate with the increase of the viewing angle within the specified viewing angle, achieving the effect of keeping the brightness unchanged.

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Abstract

The invention provides application of a prismatic table-like lens in a silicon-based OLED display device, the silicon-based OLED display device and a preparation method, and belongs to the technical field of semiconductors. The invention provides application of a prismatic table-like lens in a silicon-based OLED (Organic Light Emitting Diode) display device. The prismatic table-like lens has a semi-spherical curved surface on the side surface and a plane on the top. The prismatic table-like lens is applied to the silicon-based OLED display device, the side surface of the prismatic table-like lens is the hemispherical curved surface, the top of the prismatic table-like lens is the plane, the hemispherical curved surface is used for receiving light, and the plane is used for ensuring uniform light emission, so that the brightness cannot be attenuated along with the increase of a visual angle within a specified visual angle range (+ / -20 degrees to + / -60 degrees), and the brightness of the silicon-based OLED display device is improved. Therefore, the visual angle stability is improved.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an application of a prism - like table - shaped lens in a silicon - based OLED display device, a silicon - based OLED display device, and a preparation method thereof. Background Art

[0002] In current mainstream silicon - based micro - display products in the industry, the process of white - light OLED device + CF (Color filter) is mainly adopted. If the brightness requirement of the product is high, a lens can be added on the CF to collect light so as to improve the product brightness, and the brightness gain that can be achieved by introducing such a lens structure.

[0003] The lenses in the related technologies are all hemispherical, and there is a problem that the brightness will gradually decrease with the increase of the viewing angle within a fixed viewing - angle range. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide an application of a prism - like table - shaped lens in a silicon - based OLED display device, a silicon - based OLED display device, and a preparation method thereof. The prism - like table - shaped lens of the present invention can ensure that the brightness does not decay with the increase of the viewing angle within a specified viewing - angle range (±20° to ±60°), and the brightness remains unchanged, thereby improving the viewing - angle stability.

[0005] To achieve the above - mentioned invention purpose, the present invention provides the following technical solutions:

[0006] The present invention provides an application of a prism - like table - shaped lens in a silicon - based OLED display device, wherein the side surface of the prism - like table - shaped lens is a hemispherical curved surface and the top is a plane.

[0007] The present invention also provides a silicon - based OLED display device, which includes a complementary metal - oxide - semiconductor substrate, an anode, an organic light - emitting layer, a cathode, a packaging layer, a color filter, and a prism - like table - shaped lens that are sequentially stacked, wherein the side surface of the prism - like table - shaped lens is a hemispherical curved surface and the top is a plane.

[0008] Preferably, the material of the prism - like table - shaped lens is a non - photosensitive and non - thermally fusible material.

[0009] Preferably, the refractive index of the prism - like table - shaped lens is 1.6 - 2.5.

[0010] Preferably, the refractive index of the prism - like table - shaped lens is 2 - 2.2.

[0011] Preferably, the non - photosensitive and non - thermally fusible material includes a high - transmittance organic resin material, and the transmittance of the high - transmittance organic resin material is greater than 95%.

[0012] Preferably, the angle between the upper surface of the color filter and the tangent line is 60° to 90°, and the tangent line refers to the tangent line on the hemispherical surface at the intersection of the upper surface of the color filter and the side surface of the prism - like lens.

[0013] Preferably, the thickness of the prism - like lens is 1 to 4 μm.

[0014] Preferably, the prism - like lens completely covers or partially covers the color filter.

[0015] The present invention also provides a method for manufacturing a silicon - based OLED display device according to the above - mentioned technical solution, including the following steps:

[0016] Form an anode, an organic light - emitting layer, a cathode, a packaging layer, and a color filter on a complementary metal - oxide - semiconductor substrate in sequence;

[0017] Apply a lens material on the color filter to obtain a lens glue layer;

[0018] Coat a photoresist on the surface of the lens glue layer, and then perform exposure, development, and re - flow in sequence to form a hemispherical photolithography body;

[0019] Etch the hemispherical photolithography body and the lens glue layer to expose the color filter, and then remove the remaining hemispherical photolithography body to obtain the silicon - based OLED display device.

[0020] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0021] The present invention applies a prism - like lens to a silicon - based OLED display device. The side surface of the prism - like lens is a hemispherical surface, and the top is a plane. The function of the hemispherical surface is to collect light, and the function of the plane is to ensure uniform light output. Furthermore, it can achieve that the brightness does not decay with the increase of the viewing angle within a specified viewing - angle range (±20° to ±60°), and the brightness remains unchanged, thereby improving the viewing - angle stability. The specific principle is described in combination with Figures 1 to 2 as follows:

[0022] Figure 1 is the light - output schematic diagram of a hemispherical lens in the related art, Figure 2 is the light - output schematic diagram of the prism - like lens of the present invention. Light emits from the organic light - emitting layer (EL), passes through the lens. Since the refractive index n1 of the lens is greater than the refractive index n2 of the external liquid optical clear resin (OCR), according to Snell's law, the light will deflect towards the center of the lens here, thus achieving a light - concentrating effect. Figure 1 Most of the light in [reference] will converge towards the middle, so the brightness at the middle viewing angle is relatively high, and there is a problem that the larger the viewing angle, the lower the brightness. Figure 2The light emitted from the EL to the edge side of the lens will contract to a certain extent, thereby enhancing the brightness at a small viewing angle (below 60°). The top of the lens is flat and has no light-concentrating effect, so the brightness in the front viewing angle will not be enhanced, thus achieving stable brightness.

[0023] Furthermore, the present invention defines that the material of the prism-like table lens is a non-photosensitive and non-thermally soluble material, and the refractive index is 1.6 - 2.5. In the related art, the lens needs to use a thermally soluble material with a refractive index of 1.5 - 1.7. The present invention expands the selection types of the prism-like table lens materials, and the final lens gain that can be achieved is higher.

[0024] The present invention also provides a preparation method of the silicon-based OLED display device described in the above technical solution. The preparation method of the present invention is simple in operation and easy to realize industrial production; and the present invention can control the size of the top plane of the prism-like table lens and control the curvature of the hemispherical surface by adjusting the parameters of reflow and etching. Description of the Drawings

[0025] Figure 1 It is a light-emitting schematic diagram of a hemispherical lens in the related art;

[0026] Figure 2 It is a light-emitting schematic diagram of the prism-like table lens of the present invention;

[0027] Figure 3 It is a structural schematic diagram of the silicon-based OLED display device of the present invention;

[0028] Figures 4 to 5 It is a flowchart of manufacturing a silicon-based OLED display device with a hemispherical lens in the related art;

[0029] Figures 6 to 8 It is a preparation flowchart of the silicon-based OLED display device of the present invention;

[0030] Figure 9 It is the lens viewing angle and normalized optical simulation result of the comparative example silicon-based OLED display device;

[0031] Figure 10 It is the lens viewing angle and normalized optical simulation result of the example silicon-based OLED display device. Detailed Embodiments

[0032] The present invention provides an application of a prism-like table lens in a silicon-based OLED display device. The side of the prism-like table lens is a hemispherical surface, and the top is a flat surface.

[0033] In the present invention, the material of the frustum-like lens is preferably a non-photosensitive and non-thermally fusible material. The non-photosensitive and non-thermally fusible material more preferably includes a high-transparency organic resin material, and the transmittance of the high-transparency organic resin material is preferably greater than 95%.

[0034] In the present invention, the refractive index of the frustum-like lens is preferably 1.6 - 2.5, and more preferably 2 - 2.2.

[0035] In the present invention, the function of the hemispherical curved surface of the frustum-like lens is to collect light, and the function of the flat surface is to ensure uniform light output. Furthermore, it can achieve that the brightness does not decay with the increase of the viewing angle within a specified viewing angle range (±20° - ±60°), and the brightness remains unchanged, thereby improving the viewing angle stability.

[0036] The present invention also provides a silicon-based OLED display device, which includes a complementary metal oxide semiconductor substrate (CMOS substrate), an anode (Anode), an organic light-emitting layer (EL), a cathode (Cathode), a packaging layer (TFE), a color filter, and a frustum-like lens that are sequentially stacked. The side surface of the frustum-like lens is a hemispherical curved surface, and the top is a flat surface.

[0037] Figure 3 Shown is a schematic structural diagram of the silicon-based OLED display device of the present invention. The following will Figure 3 describe the silicon-based OLED display device of the present invention.

[0038] In the present invention, the material and refractive index of the frustum-like lens are preferably the same as those in the above solution, and will not be elaborated here.

[0039] In the present invention, the thickness of the frustum-like lens is preferably 1 - 4 μm, and the area ratio of the top to the bottom of the frustum-like lens is preferably 0.1176 - 0.75:1.

[0040] In the present invention, the frustum-like lens preferably completely covers or partially covers the color filter, and the ratio of the area of the top to the bottom area of the frustum-like lens is determined according to the viewing angle requirements of the product.

[0041] The silicon-based OLED display device of the present invention includes a complementary metal oxide semiconductor substrate.

[0042] The silicon-based OLED display device of the present invention includes an anode.

[0043] In the present invention, the thickness of the anode is preferably Specifically, it can be 1000, 1100, 1200, 1300, 1400, or

[0044] In the present invention, the material of the anode is preferably one or more of Ti, TiN, Al, and ITO.

[0045] The silicon-based OLED display device of the present invention includes an organic light-emitting layer.

[0046] In the present invention, the thickness of the organic light-emitting layer is preferably Specifically, it can be 1500, 2000, 2500, 3000, or

[0047] The present invention does not have special limitations on the material of the organic light-emitting layer, and materials well-known to those skilled in the art can be used.

[0048] The silicon-based OLED display device of the present invention includes a cathode.

[0049] In the present invention, the thickness of the cathode is preferably Specifically, it can be 1000, 1500, or

[0050] In the present invention, the cathode is preferably indium zinc oxide (IZO).

[0051] The silicon-based OLED display device of the present invention includes a packaging layer.

[0052] In the present invention, the thickness of the packaging layer is preferably Specifically, it can be 5000, 10000, 15000, or

[0053] In the present invention, the material of the packaging layer preferably includes SiN, Al 2 O 3 and TiO 2 One or more of them.

[0054] The silicon-based OLED display device of the present invention includes a color filter, and the color filter includes CF-R, CG-B, and CF-G.

[0055] In the present invention, the thickness of the color filter is preferably Specifically, it can be 5000, 10000, 15000, or

[0056] The present invention does not have special limitations on the material of the color filter, and materials well-known to those skilled in the art can be used, specifically, such as those obtained by integrating ultra-thin float glass, metal, and negative photoresist.

[0057] In the present invention, the angle between the upper surface of the color filter and the tangent line is preferably 60° to 90°, specifically, it can be 60°, 70°, 80° or 90°. By controlling the angle, the light collection effect of the lens can be adjusted, thereby controlling the lens gain effect. The tangent line refers to the tangent line on the hemispherical surface at the intersection of the upper surface of the color filter and the side surface of the prism-like lens.

[0058] The present invention also provides a method for manufacturing a silicon-based OLED display device according to the above technical solution, including the following steps:

[0059] An anode, an organic light-emitting layer, a cathode, a packaging layer, and a color filter are sequentially formed on a complementary metal oxide semiconductor substrate;

[0060] Lens material is coated on the color filter to obtain a lens glue layer;

[0061] After a photoresist (PR) is coated on the surface of the lens glue layer, exposure, development, and reflow are sequentially performed to form a hemispherical photolithography body;

[0062] The hemispherical photolithography body and the lens glue layer are etched to expose the color filter, and then the remaining hemispherical photolithography body is removed to obtain the silicon-based OLED display device.

[0063] Figures 6 to 8 FIG. is a flowchart of the manufacturing process of the silicon-based OLED display device of the present invention. The following will be combined with Figures 6 to 8 to describe the manufacturing method of the present invention.

[0064] In the present invention, an anode, an organic light-emitting layer, a cathode, a packaging layer, and a color filter are sequentially formed on a complementary metal oxide semiconductor substrate, and then lens material is coated on the color filter to obtain a lens glue layer, as shown in Figure 6 .

[0065] After obtaining the lens glue layer, a photoresist is coated on the surface of the lens glue layer, and then exposure, development, and reflow are sequentially performed to form a hemispherical photolithography body, as shown in Figure 7 .

[0066] In the present invention, the temperature of the reflow is preferably 70 to 95 °C, specifically, it can be 70, 75, 80, 85, 90 or 95 °C, and the time is preferably 50 to 300 s, specifically, it can be 50, 100, 150, 200, 250 or 300 s. By controlling the temperature and time of the reflow, the cross-sectional profile of the side wall of the prism-like lens can be controlled, ensuring the light collection performance of the prism-like lens, thereby improving the lens gain effect.

[0067] After obtaining the hemispherical lithography body, the present invention etches the hemispherical lithography body and the lens adhesive layer to expose the color filter, as shown in Figure 8 , and then removes the remaining hemispherical lithography body to obtain the silicon-based OLED display device.

[0068] In the present invention, the etching is preferably dry etching. The function of the etching is to transfer the hemispherical lithography body to the underlying lens material. By controlling the etching time of the present invention, the top area size of the prism-like lens can be controlled. By controlling the aspect ratio of the etching (preferably 1:10 to 1:20), the sidewall morphology of the prism-like lens can be controlled to achieve the control of the included angle described above.

[0069] The present invention preferably removes the remaining hemispherical lithography body by a chemical solution.

[0070] In the present invention, the chemical solution preferably includes N-methyl-2-pyrrolidone (NMP), which can remove the photoresist and does not react with the lens material at the same time.

[0071] Next, the technical solutions in the present invention will be clearly and completely described in conjunction with the embodiments in the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present invention without creative efforts shall fall within the protection scope of the present invention.

[0072] Comparative Example

[0073] A silicon-based OLED display device is prepared by making a hemispherical lens in the related art. The process is as shown in Figures 4 to 5 . The silicon-based OLED display device made of the hemispherical lens includes a complementary metal oxide semiconductor substrate, an anode (made of Al, with a thickness of ), an organic light-emitting layer (with a thickness of ), a cathode (made of IZO, with a thickness of ), a packaging layer (made of TiO 2 , with a thickness of ), a color filter (made of an integrated ultra-thin float glass, metal, and negative photoresist, with a thickness of ) and a hemispherical lens (made of an organic resin-based light-transmitting material, with a refractive index of 1.5), and includes the following steps:

[0074] An anode, an organic light-emitting layer, a cathode, a packaging layer, and a color filter are sequentially formed on the complementary metal oxide semiconductor substrate. Then, a hemispherical lens material is coated on the color filter, and then exposure and development are sequentially performed to form a columnar structure, as shown in Figure 4 ;

[0075] Then, perform reflow at a temperature of 70 °C to cause the hemispherical lens material to reflow and form a hemisphere, obtaining the silicon-based OLED display device.

[0076] Example

[0077] Preparation Figure 3 For the silicon-based OLED display device with the structure shown, the process is as Figures 6 to 8 shown. The silicon-based OLED display device includes a complementary metal oxide semiconductor substrate, an anode (made of Al, with a thickness of ), an organic light-emitting layer (with a thickness of ), a cathode (made of IZO, with a thickness of ), a packaging layer (made of TiO 2 , with a thickness of ), a color filter (made of an integrated ultra-thin float glass, metal, and negative photoresist, with a thickness of ), and a prism-like lens (made of an organic resin light-transmitting material, with a transmittance greater than 95% and a refractive index of 2.5). The side surface of the prism-like lens is a hemispherical curved surface, the top is a plane, the thickness is 4 μm, the ratio of the top area to the bottom area is 0.75, and the angle between the upper surface of the color filter and the tangent line (the tangent line refers to the tangent line on the hemispherical curved surface at the intersection of the upper surface of the color filter and the side surface of the prism-like lens) is 60°. The steps include:

[0078] Form the anode, organic light-emitting layer, cathode, packaging layer, and color filter on the complementary metal oxide semiconductor substrate in sequence, and then apply lens material glue on the color filter to obtain a lens glue layer, as shown in Figure 6 ;

[0079] After obtaining the lens glue layer, apply photoresist on the surface of the lens glue layer and then perform exposure, development, and reflow (temperature: 70 °C, time: 300 s) in sequence to form a hemispherical photolithography body, as shown in Figure 7 ;

[0080] After obtaining the hemispherical photolithography body, perform dry etching (aspect ratio: 1:10) on the hemispherical photolithography body and the lens glue layer to expose the color filter, as shown in Figure 8 , and then remove the remaining hemispherical photolithography body through the liquid medicine NMP to obtain the silicon-based OLED display device.

[0081] Figure 9 For the lens view angle of the comparative example silicon-based OLED display device and the normalized optical simulation results, it can be seen that most of the light in the hemispherical lens converges towards the middle, resulting in a higher brightness in the middle view angle, and there is a problem that the larger the view angle, the lower the brightness.

[0082] Figure 10The lens viewing angle and the normalized optical simulation results of the silicon-based OLED display device in the embodiment. It can be seen that the light emitted from the EL to the edge side of the lens of the prismatic table-like lens provided by the present invention will shrink to a certain extent, thereby improving the brightness at a small viewing angle ( Figure 10 below ±20° in the figure). The top of the lens is flat and has no light condensing effect, so the brightness in the positive viewing angle will not be enhanced, thus achieving a stable brightness within the required viewing angle (such as Figure 10 ±20° in the figure).

[0083] The above are only the preferred embodiments of the present invention, and do not impose any formal restrictions on the present invention. It should be noted that for those of ordinary skill in the art of the present technology, without departing from the principle of the present invention, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present invention.

Claims

1. Application of a prism-like lens in a silicon-based OLED display device, wherein the side of the prism-like lens is a hemispherical curved surface and the top is a flat surface.

2. A silicon-based OLED display device, characterized in that: The invention comprises a complementary metal oxide semiconductor substrate, an anode, an organic light emitting layer, a cathode, a packaging layer, a color filter and a prism-like lens which are stacked in sequence. The side surface of the prism-like lens is a hemispherical curved surface and the top is a plane.

3. The silicon-based OLED display device according to claim 2, characterized in that: The material of the prism-like lens is a non-photosensitive and non-thermal-melting material.

4. The silicon-based OLED display device according to claim 2 or 3, characterized in that: The refractive index of the quasi-prism lens is 1.6-2.

5.

5. The silicon-based OLED display device according to claim 4, characterized in that: The refractive index of the quasi-prism lens is 2 to 2.

2.

6. The silicon-based OLED display device according to claim 3, characterized in that: The non-photosensitive, non-thermal fusible material comprises a high-transmittance organic resin material, and the transmittance of the high-transmittance organic resin material is greater than 95%.

7. The silicon-based OLED display device according to claim 2, characterized in that: The angle between the upper surface of the color filter and the tangent line is 60° to 90°, and the tangent line refers to the tangent line of the intersection of the upper surface of the color filter and the side surface of the prism-like lens on the hemispherical surface.

8. The silicon-based OLED display device according to claim 2 or 7, characterized in that: The thickness of the prism-like lens is 1-4 μm.

9. The silicon-based OLED display device according to claim 2, characterized in that: The prism-like lens fully or partially covers the color filter.

10. The method for preparing a silicon-based OLED display device according to any one of claims 2 to 9, characterized in that: The following steps are involved: An anode, an organic light-emitting layer, a cathode, an encapsulation layer and a color filter are sequentially formed on a complementary metal oxide semiconductor substrate; Applying glue to the lens material on the color filter to obtain a lens glue layer; After coating the photoresist on the surface of the lens glue layer, sequentially performing exposure, development and reflow to form a hemispherical photolithography body; The hemispherical photolithography body and the lens adhesive layer are etched to expose the color filter, and then the remaining hemispherical photolithography body is removed to obtain the silicon-based OLED display device.

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