Multifunctional memristor based on P3HT / TiO2 heterojunction and preparation method thereof

Abstract

The invention provides a multifunctional memristor based on a P3HT / TiO2 heterojunction and a preparation method thereof.The memristor comprises a substrate and a top electrode which are sequentially arranged from bottom to top and further comprises a titanium dioxide thin film and a P3HT thin film, namely, a poly (3-hexylthiophene) thin film, the titanium dioxide thin film and the P3HT thin film are arranged between the substrate and the top electrode, and the titanium dioxide thin film is arranged on the surface of the substrate; the multifunctional memristor based on the P3HT / TiO2 heterojunction and the preparation method thereof have the advantages of excellent memory storage effect, enhanced quick response capability, enhanced environmental adaptability and the like, are low in power consumption, and can remarkably reduce the production cost and improve the production efficiency.

Description

Technical Field

[0001] The present invention relates to a multifunctional memristor based on a P3HT / TiO2 heterojunction and a preparation method thereof, belonging to the technical field of memristors. Background Art

[0002] A memristor is the fourth basic circuit element after resistors, capacitors, and inductors. It is a non-volatile element with "memory" characteristics, whose resistance value can change according to the magnitude and direction of the historical current and maintain its state after the current is interrupted. This characteristic of the memristor gives it unique advantages in simulating biological neural networks, developing new memories, and implementing more efficient computing models. However, the current memristors have the following problems:

[0003] 1. Non-volatile storage requirements: Current computer storage technologies such as DRAM and flash memory face problems such as high power consumption, volatility, and long response times.

[0004] 2. Low-power, high-efficiency computing requirements: With the popularization of mobile devices and embedded systems, how to reduce power consumption while ensuring performance has become a major technical problem.

[0005] 3. Brain-inspired computing and neural network applications: With the development of artificial intelligence (AI) technology, brain-inspired computing and neural network simulation have become research hotspots.

[0006] 4. Requirements for flexible electronic devices: With the continuous progress of flexible electronics technology, products such as smart wearable devices and wearable medical devices have put forward higher requirements for flexible, thin, and high-performance electronic devices.

[0007] 5. Large-scale integrated storage problems: In modern computing systems, improving storage density and integration is an ongoing challenge. Summary of the Invention

[0008] The purpose of the present invention is to provide a multifunctional memristor based on a P3HT / TiO2 heterojunction and a preparation method thereof to solve the problems of volatility, high power consumption, and long response time existing in the prior art.

[0009] The technical solution of the present invention is as follows:

[0010] A multifunctional memristor based on a P3HT / TiO2 heterojunction includes a substrate and a top electrode arranged in sequence from bottom to top, and further includes a titanium dioxide thin film and a P3HT thin film, i.e., a poly(3-hexylthiophene) thin film. The titanium dioxide thin film and the P3HT thin film are arranged between the substrate and the top electrode, and the titanium dioxide thin film is arranged on the surface of the substrate.

[0011] Further, the top electrode uses an aluminum electrode.

[0012] Further, the substrate is made of indium tin oxide ITO, glass or a flexible material.

[0013] A preparation method of a multifunctional memristor based on a P3HT / TiO2 heterojunction according to any one of the above, comprising the following steps:

[0014] S1. Substrate treatment: Use an ultrasonic cleaning device to clean the surface of the substrate. After removing dust and impurities, use oxygen plasma to treat the surface of the substrate.

[0015] S2. Preparation of P3HT thin film, i.e., poly(3 - hexylthiophene) thin film: After preparing the P3HT solution, uniformly coat the P3HT solution on the surface of the substrate to obtain a P3HT thin film.

[0016] S3. Preparation of titanium dioxide thin film, i.e., TiO2 thin film: Dissolve tetrabutyl titanate in absolute ethanol to obtain solution A, mix concentrated sulfuric acid and absolute ethanol to obtain solution B, add solution A to solution B to obtain solution C, and uniformly coat solution C on the surface of the substrate to obtain a titanium dioxide thin film.

[0017] S4. Top electrode deposition: Deposit a metal electrode on the top of the P3HT thin film by vacuum evaporation to obtain a multifunctional memristor based on a P3HT / TiO2 heterojunction.

[0018] Further, step S2 is specifically as follows:

[0019] S21. Preparation of P3HT solution: Dissolve P3HT in chloroform to obtain a P3HT solution with a concentration of 5 mg / ml.

[0020] S22. Spin - coating method: Before spin - coating, irradiate indium tin oxide ITO with ultraviolet light for 15 minutes, drop the P3HT solution onto indium tin oxide ITO, and use a spin coater to uniformly coat the P3HT solution on the surface of the substrate, and spin - coat at a speed of 3000 rpm for 30 seconds.

[0021] S23. Heat treatment: Perform heat treatment annealing on the coated P3HT thin film to obtain a P3HT thin film.

[0022] Further, in step S23, the annealing temperature is 120 °C and the time is 30 minutes.

[0023] Further, step S4 is specifically as follows:

[0024] S41. Solution preparation: Dissolve 15 ml of tetrabutyl titanate in 60 ml of absolute ethanol, name it solution A, name the mixed solution of 3 ml of concentrated sulfuric acid and 15 ml of absolute ethanol as solution B, and then slowly add solution A to solution B and stir for 1 h to obtain solution C.

[0025] S42. Spin coating method: Drop solution C onto the substrate, and use a spin coater to uniformly coat solution C on the surface of the substrate, and spin coat for 30 seconds at a speed of 3000 rpm;

[0026] S43. Heat treatment: After performing heat treatment annealing on the thin film, a titanium dioxide thin film is obtained.

[0027] Further, in step S43, the annealing temperature is 100 °C and the time is 15 minutes.

[0028] The beneficial effects of the present invention are as follows:

[0029] First, this multifunctional memristor based on the P3HT / TiO2 heterojunction and its preparation method have excellent memory storage effects, low power consumption, can achieve different conductance states by controlling the electric field, have good memory effects, can retain data after power off, reduce energy consumption, and can maintain the memory state without a continuous power supply, meeting the requirements of non-volatile memories and being suitable for devices used to store data and information.

[0030] Second, the present invention has enhanced fast response capabilities, performs excellently in terms of response speed, and can complete state switching within nanoseconds. This enables it to have broad application prospects in fields such as high-speed information processing and analog computing.

[0031] Third, this multifunctional memristor based on the P3HT / TiO2 heterojunction and its preparation method have enhanced environmental adaptability. Combining the material characteristics of P3HT and TiO2 enables this memristor to operate under different temperature and humidity conditions and have strong environmental adaptability. Therefore, the memristor based on P3HT / TiO2 can operate stably in various complex environments and is particularly suitable for intelligent devices and sensor systems in harsh environments.

[0032] Fourth, this multifunctional memristor based on the P3HT / TiO2 heterojunction and its preparation method have enhanced manufacturing flexibility, can be manufactured through simple solution processing and low-temperature processing techniques, significantly reducing production costs and improving production efficiency. In addition, the solubility of the materials enables the devices to be mass-produced on flexible substrates and have good scalability.

[0033] Fifth, this multifunctional memristor based on the P3HT / TiO2 heterojunction and its preparation method can be applied in adaptive learning and neural networks. Since the P3HT / TiO2 memristor has adjustable conductance states and is suitable for simulating the activities of neurons, it can be widely applied in the fields of brain-inspired computing and neural networks and can be used as the basic unit of artificial neural networks to imitate the learning and memory mechanisms of biological neural synapses. Description of the Drawings

[0034] Figure 1 It is a schematic structural diagram of the multifunctional memristor based on the P3HT / TiO2 heterojunction in the embodiment of the present invention;

[0035] Figure 2 It is a schematic diagram of the test results of the electrical properties of the multifunctional memristor based on the P3HT / TiO2 heterojunction in the embodiment;

[0036] Figure 3 It is a schematic diagram of the test results of the synaptic properties of the multifunctional memristor based on the P3HT / TiO2 heterojunction in the embodiment. Among them, (a) is a schematic diagram of the test results with 8V voltage as the pulse voltage, 1V voltage as the reading voltage, and the pulse intervals being 5 seconds respectively, (b) is a schematic diagram of the test results with 8V voltage as the pulse voltage, 1V voltage as the reading voltage, and the pulse intervals being 10 seconds respectively, and (c) is a schematic diagram of the test results with 8V voltage as the pulse voltage, 1V voltage as the reading voltage, and the pulse intervals being 20 seconds respectively. Detailed implementation manners

[0037] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0038] The embodiment provides a multifunctional memristor based on the P3HT / TiO2 heterojunction, such as Figure 1 , which includes a substrate and a top electrode arranged in sequence from bottom to top, and also includes a titanium dioxide thin film and a P3HT thin film, that is, a poly(3 - hexylthiophene) thin film. The titanium dioxide thin film and the P3HT thin film are arranged between the substrate and the top electrode, and the titanium dioxide thin film is arranged on the surface of the substrate.

[0039] This multifunctional memristor based on the P3HT / TiO2 heterojunction has the following advantages: 1) The P3HT / TiO2 memristor combines the advantages of the organic semiconductor P3HT and the oxide material TiO2, and has low operating voltage and low power consumption characteristics. This makes it have great potential in low-power storage and computing applications, and is particularly suitable for integration into wearable devices and Internet of Things devices. 2) It has flexibility and bendability: Since P3HT, as an organic material, has good flexibility, the memristor based on the P3HT / TiO2 structure can be fabricated on a flexible substrate, which provides good technical support for future flexible electronic devices (such as flexible displays, smart tags, etc.). 3) It has an adjustable memristive effect: The conductivity and memory effect of the P3HT / TiO2 memristor depend on the history of the applied voltage, and different conductivity states (such as high resistance state and low resistance state) can be achieved through simple voltage regulation. This characteristic makes it very suitable for fields such as non-volatile storage, analog computing, and neural networks. 4) It has material tunability and easy processability: As an organic semiconductor, the electronic properties of P3HT can be regulated by changing parameters such as molecular structure and film thickness. In addition, TiO2, as an inorganic oxide material, has good stability, and its combination with P3HT can optimize its performance. The combination of the two provides more possibilities for device performance regulation. 5) It has high stability and long-term durability: The chemical stability of TiO2 and its good environmental resistance enable the P3HT / TiO2-based memristor to maintain good performance in various working environments, have a long service life, and are suitable for devices that operate for a long time.

[0040] For this multifunctional memristor based on the P3HT / TiO2 heterojunction, the top electrode uses an aluminum electrode. The substrate is made of indium tin oxide ITO, glass Glass or a flexible material.

[0041] As a non-volatile storage device, this multifunctional memristor based on the P3HT / TiO2 heterojunction can retain data after power-off, reduce energy consumption, and can work at low voltage and low power. This will promote a more energy-efficient and high-performance storage system, which is suitable for applications such as smart hardware, Internet of Things devices, and embedded systems.

[0042] A preparation method for a multifunctional memristor based on the P3HT / TiO2 heterojunction as described in any one of the above, includes the following steps

[0043] S1. Substrate treatment: Use an ultrasonic cleaning device to clean the surface of the substrate, remove dust and impurities, and then use oxygen plasma to treat the surface of the substrate;

[0044] S2. Preparation of P3HT thin film, i.e., poly(3 - hexylthiophene) thin film: After preparing the P3HT solution, the P3HT solution is uniformly coated on the surface of the substrate to obtain the P3HT thin film;

[0045] S21. Preparation of P3HT solution: Dissolve P3HT in chloroform to obtain the P3HT solution with a concentration of 5 mg / ml;

[0046] S22. Spin - coating method: Before spin - coating, irradiate indium tin oxide (ITO) under ultraviolet light for 15 minutes. Drop the P3HT solution onto indium tin oxide (ITO), and use a spin coater to uniformly coat the P3HT solution on the surface of the substrate, and spin - coat at a speed of 3000 rpm for 30 seconds;

[0047] S23. Heat treatment: Perform heat treatment annealing on the coated P3HT thin film. The annealing temperature is 120 °C and the time is 30 minutes to obtain the P3HT thin film.

[0048] S3. Preparation of titanium dioxide thin film, i.e., TiO₂ thin film: Dissolve tetrabutyl titanate in absolute ethanol to obtain solution A. Mix concentrated sulfuric acid and absolute ethanol to obtain solution B. Add solution A to solution B to obtain solution C. After uniformly coating solution C on the surface of the substrate, obtain the titanium dioxide thin film;

[0049] S4. Deposition of top electrode: Deposit a metal electrode on the top of the P3HT thin film by vacuum evaporation method to obtain a multifunctional memristor based on the P3HT / TiO₂ heterojunction.

[0050] S41. Solution preparation: Dissolve 15 ml of tetrabutyl titanate in 60 ml of absolute ethanol and name it solution A. Name the mixed solution of 3 ml of concentrated sulfuric acid and 15 ml of absolute ethanol as solution B. Then slowly add solution A to solution B and stir for 1 h to obtain solution C;

[0051] S42. Spin - coating method: Drop solution C onto the substrate, and use a spin coater to uniformly coat solution C on the surface of the substrate, and spin - coat at a speed of 3000 rpm for 30 seconds;

[0052] S43. Heat treatment: Perform heat treatment annealing on the thin film. The annealing temperature is 100 °C and the time is 15 minutes to obtain the titanium dioxide thin film.

[0053] This multifunctional memristor based on the P3HT / TiO2 heterojunction and its preparation method combine P3HT and TiO2 in the form of thin films. The TiO2 thin film serves as the dielectric layer, while the P3HT thin film serves as the conductive layer, ensuring that the device has sufficient flexibility and low-power consumption characteristics. Poly(3-hexylthiophene) P3HT has excellent electrical conductivity and adaptability. Its molecular structure can effectively respond to changes in the electric field, resulting in tunable conductivity, which is the core of realizing the memristive effect. Titanium dioxide TiO2 has excellent electrical insulation characteristics and good memristive effect performance at low voltages. The P3HT / TiO2 memristor can provide a low-power memory storage function and, at the same time, promote the development of low-power computing systems by combining with traditional electronic components (such as CPUs and memories). Its high performance and low-power consumption characteristics make it widely applicable in portable devices, intelligent sensors, and wireless communication systems.

[0054] This multifunctional memristor based on the P3HT / TiO2 heterojunction and its preparation method can improve the performance, reduce the cost, and enhance the stability of the memristor through the combination of P3HT and TiO2. It has durability and stability in multiple cycles, especially under different voltage and frequency conditions. The power consumption is relatively low and can be further reduced by optimizing the material ratio and thickness. By regulating the material properties and structural design, the response time and operating voltage range can be optimized to achieve high-speed operation. Different crystal phases of TiO2, such as anatase and rutile, can affect the performance of the memristor. The electronic behavior at the P3HT / TiO2 interface is the core of the memristive effect, and by adjusting the interface quality, high-efficiency controllability of the memristor can be achieved.

[0055] Principle of the memristive effect of this multifunctional memristor based on the P3HT / TiO2 heterojunction: By applying a voltage, the carrier density of the P3HT thin film and the defect density of the TiO2 thin film change, thereby causing a change in the conductivity of the memristor. This process is reversible and can achieve the memory storage function.

[0056] As an organic semiconductor material, P3HT combined with the good electrical insulation performance of TiO2 enables the P3HT / TiO2 memristor to have good flexibility and bendability and can be applied on flexible substrates. Such a memristor not only has high performance but also can meet the special requirements of wearable devices, flexible displays, and other similar devices. The electrical properties of P3HT are greatly affected by its molecular structure and crystallinity. Therefore, the heat treatment of the thin film and the solution concentration need to be precisely controlled. Factors such as the environmental temperature and humidity during the preparation process may affect the quality of the P3HT and TiO2 thin films, so operations need to be carried out in a controlled environment.

[0057] This multifunctional memristor based on P3HT / TiO2 heterojunction and its preparation method can realize high-density storage units with small size and flexible integration. By optimizing the design and manufacturing process of the material, it can be integrated into storage chips on a large scale to meet the needs of modern big data processing, cloud computing, etc., and improve the capacity, speed and stability of the storage system. The P3HT / TiO2 memristor can imitate the learning and memory mechanism of biological synapses and act as a basic unit in simulated neural networks. Through its adjustable conductance state, the memristor can be used as a storage unit and provide data transmission and processing on the "synaptic" function in the neural network. Its application in the fields of neuromorphic computing, deep learning accelerators, etc. will effectively improve the training and reasoning efficiency of AI models.

[0058] The electrical performance test results of this multifunctional memristor based on P3HT / TiO2 heterojunction are as follows Figure 2 , Figure 2 In the figure, the 10 lines from bottom to top represent the 1st to 10th cycles from 0V to 6V and then to 0V. Figure 2 It can be seen that when the voltage sweeps from positive to negative, the current does not return to the initial point along the same path. This is because the state of the device (high resistance or low resistance) remembers the previous voltage history. The current-voltage (IV) characteristic test confirms its memristive effect. By applying different voltages or currents to observe the resistance change of the memristor, its reversible memory characteristics are verified.

[0059] The synaptic performance of this multifunctional memristor based on P3HT / TiO2 heterojunction was tested, including the double pulse enhancement (ppf) results. Figure 3 . Figure 3 In (a), (b) and (c), the blue lines represent two identical pulses given at different intervals, and the red lines represent the current after the pulse. The time interval between the two pulses gradually increases. Figure 3 It can be seen that the superior performance of this multifunctional memristor based on P3HT / TiO2 heterojunction in dual pulse enhancement is reflected in its high responsiveness to dual pulse signals, making it highly competitive and potential in the fields of storage and information processing.

[0060] The above embodiments are only for illustrating the technical idea of ​​the present invention, and cannot be used to limit the protection scope of the present invention. Any changes made to the technical solution according to the technical idea proposed by the present invention shall fall within the protection scope of the present invention.

Claims

1. A multifunctional memristor based on a P3HT / TiO2 heterojunction, comprising a substrate and a top electrode arranged in sequence from bottom to top, characterized in that: It also includes a titanium dioxide film and a P3HT film, namely a poly (3-hexylthiophene) film. The titanium dioxide film and the P3HT film are arranged between the substrate and the top electrode, and the titanium dioxide film is arranged on the surface of the substrate.

2. The multifunctional memristor based on the P3HT / TiO2 heterojunction according to claim 1, characterized in that: The top electrode is made of aluminum.

3. The multifunctional memristor based on P3HT / TiO2 heterojunction according to claim 1, characterized in that: The substrate is made of indium tin oxide ITO, glass or flexible material.

4. A method for preparing a multifunctional memristor based on a P3HT / TiO2 heterojunction according to any one of claims 1 to 3, characterized in that: The following steps are included: S1. Substrate treatment: Use ultrasonic cleaning equipment to clean the substrate surface, remove dust and impurities, and then use oxygen plasma to treat the substrate surface; S2, preparation of P3HT film, i.e., poly (3-hexylthiophene) film: after preparing P3HT solution, evenly coating the P3HT solution on the surface of the substrate to obtain the P3HT film; S3. Preparation of titanium dioxide thin film, i.e., TiO2 thin film: tetrabutyl titanate is dissolved in pure ethanol to obtain solution A, concentrated sulfuric acid and pure ethanol are mixed to obtain solution B, solution A is added to solution B to obtain solution C, and solution C is evenly coated on the surface of a substrate to obtain a titanium dioxide thin film; S4. Top electrode deposition: After depositing a metal electrode on the top of the P3HT film by vacuum evaporation, a multifunctional memristor based on the P3HT / TiO2 heterojunction is obtained.

5. The method for preparing a multifunctional memristor based on a P3HT / TiO2 heterojunction according to claim 4, characterized in that: Step S2 is specifically, S21. Preparation of P3HT solution: dissolving P3HT in chloroform to obtain a P3HT solution with a concentration of 5 mg / ml; S22, spin coating method: before spin coating, the indium tin oxide ITO is exposed to ultraviolet light for 15 minutes, the P3HT solution is added dropwise onto the indium tin oxide ITO, and the P3HT solution is evenly coated on the surface of the substrate using a spin coater, and the coating is performed at a speed of 3000 rpm for 30 seconds; S23, heat treatment: After heat treatment annealing is performed on the coated P3HT film, a P3HT film is obtained.

6. The method for preparing a multifunctional memristor based on a P3HT / TiO2 heterojunction according to claim 5, characterized in that: In step S23, the annealing temperature is 120°C and the time is 30 minutes.

7. The method for preparing a multifunctional memristor based on a P3HT / TiO2 heterojunction according to any one of claims 4 to 6, characterized in that: Step S4 is specifically, S41. Solution preparation: 15 ml of tetrabutyl titanate was dissolved in 60 ml of pure ethanol, named solution A, and a mixed solution of 3 ml of concentrated sulfuric acid and 15 ml of pure ethanol was named solution B. Then, solution A was slowly added to solution B and stirred for 1 hour to obtain solution C; S42, spin coating method: adding solution C dropwise onto the substrate, and using a spin coater to evenly coat the solution C on the surface of the substrate at a rotation speed of 3000 rpm for 30 seconds; S43. Heat treatment: After heat treatment annealing is performed on the film, a titanium dioxide film is obtained.

8. The method for preparing a multifunctional memristor based on a P3HT / TiO2 heterojunction according to claim 7, characterized in that: In step S43, the annealing temperature is 100°C and the time is 15 minutes.

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