A method and apparatus for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization

Abstract

This invention discloses a method and apparatus for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization. The method includes: selecting a metal thin film within a constant-temperature cavity according to a pre-constructed metal thin film thermal diffusion model to create a uniform temperature field within the cavity; extracting the temperature-sensitive characteristics of the IGBT device according to multiple preset temperature gradients; processing and analyzing the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients; and fitting the parameters based on the different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients and the pre-constructed temperature-sensitive electrical parameter model to obtain a three-dimensional model relating the fitted temperature-sensitive electrical parameters to the current and temperature. This invention uses a high thermal conductivity metal thin film to construct the constant-temperature cavity and heats the press-fit IGBT device through the constant-temperature cavity, resulting in a uniform and stable internal temperature for the press-fit IGBT device, thereby improving the accuracy of extracting the temperature-sensitive characteristics of the press-fit IGBT.

Description

Technical Field

[0001] This invention relates to the field of IGBT testing technology, and in particular to a method and apparatus for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization. Background Technology

[0002] The junction temperature of a press-fit IGBT (Insulated Gate Bipolar Transistor) is the actual operating temperature of the semiconductor in an electronic device. Accurate measurement of the IGBT junction temperature and extraction of temperature-sensitive electrical parameters are crucial for ensuring device reliability and improving operating efficiency. In practical applications, the junction temperature of a press-fit IGBT device directly affects its performance and lifespan. For example, temperature-sensitive electrical parameters (such as saturation voltage drop VT) are used to determine its performance. CE It can reflect the electrical characteristics of press-fit IGBT devices at different temperatures and is an important basic data for the actual measurement of junction temperature of press-fit IGBT devices.

[0003] Currently, traditional methods for extracting the temperature-sensitive characteristics of press-fit IGBTs typically involve heating the IGBT device using a heating plate and a high-temperature test chamber. The heating plate method heats the IGBT device to a preset temperature, and then measures its temperature-sensitive electrical parameters. However, due to the large size of press-fit IGBTs and the significant differences in thermal resistance between the internal chips, traditional heating methods result in uneven internal temperature distribution within the heated IGBT device. Furthermore, because of the thermal resistance between the heating plate and the chips, the actual temperature of the internal chips of the press-fit IGBT device may be lower than the preset temperature of the heating plate.

[0004] However, directly heating the press-fit IGBT device using a high-temperature test chamber also presents certain problems. Because the internal temperature field of the high-temperature test chamber is affected by the location of the heat source and the airflow distribution, uneven heating can occur. In particular, this can lead to the chip closer to the heat source overheating, while the chip further away from the heat source remains too cold. This temperature inhomogeneity will affect the accuracy of subsequent temperature-sensitive parameter extraction, and consequently, the accuracy of junction temperature measurement of the press-fit IGBT device.

[0005] This section is intended to provide background or context for the embodiments of the invention set forth in the claims. The description herein is not an admission that it is prior art simply because it is included in this section. Summary of the Invention

[0006] This invention provides a temperature-equilibrium-based IGBT temperature-sensitive characteristic fitting method to improve the accuracy of temperature-sensitive characteristic extraction for press-fit IGBTs. By heating the press-fit IGBT device in a constant-temperature cavity, the internal temperature of the press-fit IGBT device becomes uniform and stable, thereby enabling more accurate extraction of temperature-sensitive electrical parameters and providing more reliable temperature-sensitive characteristic data support for subsequent junction temperature measurement of press-fit IGBT devices.

[0007] To solve the above-mentioned technical problems, the present invention provides the following technical solution:

[0008] In a first aspect, the present invention provides a method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization, comprising:

[0009] The metal thin film in the constant temperature cavity is selected according to the pre-constructed metal thin film thermal diffusion model to form a uniform temperature field in the constant temperature cavity; the metal thin film thermal diffusion model is constructed based on the thermal diffusivity of the metal thin film, the thermal conductivity of the metal thin film, the density of the thermally conductive metal thin film, and the specific heat capacity of the metal material.

[0010] Obtain the real-time temperature inside the thermostatic chamber;

[0011] Once the constant temperature cavity reaches a stable state, the temperature-sensitive characteristics of the IGBT device are extracted according to multiple preset temperature gradients to obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature fluctuation within the constant temperature cavity under each preset temperature gradient within a preset temperature range.

[0012] Data processing and analysis of the temperature-sensitive electrical parameters were performed to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0013] Based on different current levels under different temperature gradients and their corresponding temperature-sensitive electrical parameter values, and a pre-established temperature-sensitive electrical parameter model, parameter fitting is performed to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters, current, and temperature; wherein, the temperature-sensitive electrical parameter model is constructed based on the rectifier's saturation voltage drop model, drift region voltage drop, and channel resistance saturation voltage drop model.

[0014] Furthermore, the IGBT temperature-sensitive characteristic fitting method based on temperature equalization also includes:

[0015] During the extraction of temperature-sensitive characteristics of the IGBT device, it is determined whether the real-time temperature is within the preset temperature range; wherein, the preset temperature range includes a preset lower limit and a preset upper limit, which are determined based on the temperature control range of the constant temperature cavity;

[0016] If the real-time temperature is lower than the preset lower limit or higher than the preset upper limit, the temperature inside the constant temperature cavity is dynamically adjusted according to the preset temperature correction rule so that the temperature inside the constant temperature cavity remains stable.

[0017] Furthermore, the step of processing and analyzing the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients includes:

[0018] The collected voltage between the collector and emitter of the IGBT device and the current of the internal chip are filtered to obtain the filtered waveform.

[0019] The filtered waveform is extracted to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0020] Furthermore, the temperature within the constant temperature cavity is dynamically adjusted using a preset temperature correction rule to maintain a stable temperature within the cavity, including:

[0021] Detect the real-time temperature collected by the suspended thermocouple;

[0022] When the real-time temperature is lower than the preset lower limit, the heating controller controls the heating element to heat the constant temperature cavity;

[0023] When the real-time temperature is higher than the preset upper temperature limit, the heating controller controls the heating element to stop heating the constant temperature cavity.

[0024] Furthermore, the steps for constructing the temperature-sensitive electrical parameter model include:

[0025] A channel resistance saturation voltage drop model for metal-oxide-semiconductor field-effect transistors is constructed based on the junction temperature, collector current surface density, drift region width, and bipolar diffusion length of the IGBT device.

[0026] A saturation voltage drop model of the rectifier is constructed based on the collector current surface density, gate oxide capacitance, gate drive voltage, and gate threshold voltage.

[0027] The temperature-sensitive electrical parameter model is constructed based on the saturation voltage drop model of the rectifier, the drift region voltage drop, and the channel resistance saturation voltage drop model.

[0028] Furthermore, the temperature-sensitive electrical parameter model is as follows:

[0029]

[0030] Where k is the Boltzmann constant, T is the junction temperature of the IGBT device, q is the charge, and J c W is the collector current surface density.N D is the width of the drift region. a n is the bipolar diffusion coefficient. i L represents the intrinsic carrier concentration. a V is the bipolar diffusion length. M Let p be the voltage drop in the drift region, and L be the cell pitch. cH μ is the channel length. ni C represents the channel mobility. OX V is the gate oxide capacitance. G V is the gate drive voltage. TH V is the gate threshold voltage. F,IGBT This represents the total saturation voltage drop of the IGBT device.

[0031] Secondly, this invention also provides an IGBT temperature-sensitive characteristic fitting device based on temperature equalization, which improves the accuracy of extracting temperature-sensitive characteristics of press-fit IGBTs. It can make the internal temperature of press-fit IGBT devices uniform and stable, thereby extracting temperature-sensitive electrical parameters more accurately and providing more reliable temperature-sensitive characteristic data support for subsequent junction temperature measurement of press-fit IGBT devices.

[0032] The thermosensitive property extraction device includes:

[0033] The thin film selection module is used to select the metal thin film in the constant temperature cavity according to the pre-constructed metal thin film thermal diffusion model, so as to form a uniform temperature field in the constant temperature cavity; the metal thin film thermal diffusion model is constructed based on the thermal diffusivity of the metal thin film, the thermal conductivity of the metal thin film, the density of the metal thermally conductive thin film, and the specific heat capacity of the metal material.

[0034] Temperature acquisition module is used to obtain the real-time temperature inside the constant temperature chamber;

[0035] The temperature-sensitive electrical parameter extraction module is used to extract the temperature-sensitive characteristics of the IGBT device according to multiple preset temperature gradients after the constant temperature cavity reaches a stable state, and obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature in the constant temperature cavity fluctuating within a preset temperature range under each preset temperature gradient.

[0036] The data processing module is used to process and analyze the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0037] The parameter fitting module is used to fit parameters to different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients and to a pre-established temperature-sensitive electrical parameter model, so as to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters and the relationship between current and temperature; the temperature-sensitive electrical parameter model is constructed based on the saturation voltage drop model of the rectifier, the drift region voltage drop and the channel resistance saturation voltage drop model.

[0038] Furthermore, the temperature-sensitive characteristic extraction device also includes:

[0039] A temperature determination module is used to determine whether the real-time temperature is within the preset temperature range during the extraction of the temperature-sensitive characteristics of the IGBT device; wherein the preset temperature range includes a preset lower temperature limit and a preset upper temperature limit, which are determined based on the temperature control range of the constant temperature cavity;

[0040] The temperature correction module is used to dynamically adjust the temperature inside the constant temperature cavity according to a preset temperature correction rule when the real-time temperature is lower than the preset lower limit or higher than the preset upper limit, so as to keep the temperature inside the constant temperature cavity stable.

[0041] Furthermore, the data processing module includes:

[0042] The data filtering unit is used to filter the collected voltage between the collector and emitter of the IGBT device and the current of the internal chip to obtain the filtered waveform.

[0043] The waveform parameter extraction unit extracts the filtered waveform to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0044] Furthermore, the temperature correction module includes:

[0045] Temperature monitoring unit, used to monitor the real-time temperature collected by the suspended thermocouple;

[0046] The first control unit is used to control the heating element to heat the constant temperature cavity using a heating controller when the real-time temperature is lower than the preset lower limit.

[0047] The second control unit is used to control the heating element to stop heating the constant temperature cavity when the real-time temperature is higher than the preset temperature upper limit.

[0048] Furthermore, the parameter fitting module includes:

[0049] A channel resistance saturation voltage drop model unit is established to construct a channel resistance saturation voltage drop model for metal-oxide-semiconductor field-effect transistors based on the junction temperature, collector current surface density, drift region width, and bipolar diffusion length of the IGBT device.

[0050] A rectifier saturation voltage drop model unit is established to construct a rectifier saturation voltage drop model based on the collector current surface density, gate oxide capacitance, gate drive voltage, and gate threshold voltage.

[0051] A temperature-sensitive electrical parameter model unit is established to construct the temperature-sensitive electrical parameter model based on the saturation voltage drop model of the rectifier, the drift region voltage drop, and the channel resistance saturation voltage drop model.

[0052] Furthermore, the temperature-sensitive electrical parameter model is as follows:

[0053]

[0054] Where k is the Boltzmann constant, T is the junction temperature of the IGBT device, q is the charge, and J C W is the collector current surface density. N D is the width of the drift region. a n is the bipolar diffusion coefficient. i L represents the intrinsic carrier concentration. a V is the bipolar diffusion length. M Let p be the voltage drop in the drift region, and L be the cell pitch. CH μ is the channel length. ni C represents the channel mobility. OX V is the gate oxide capacitance. G V is the gate drive voltage. TH V is the gate threshold voltage. F,IGBT This represents the total saturation voltage drop of the IGBT device.

[0055] This invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the above-described method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization.

[0056] This invention also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization.

[0057] This invention also provides a computer program product, which includes a computer program that, when executed by a processor, implements the above-described method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization.

[0058] This invention provides a method and apparatus for fitting the temperature-sensitive characteristics of IGBTs based on temperature uniformity. It employs a high thermal conductivity metal thin film to form a constant-temperature cavity, and heats the press-fit IGBT device through this cavity. This results in a uniform and stable internal temperature for the press-fit IGBT device, thereby improving the accuracy of extracting its temperature-sensitive characteristics. This invention not only overcomes the uneven temperature characteristic of traditional heating methods but also provides more reliable temperature-sensitive characteristic data support for subsequent parameter fitting. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. In the drawings:

[0060] Figure 1 This is a flowchart illustrating an IGBT temperature-sensitive characteristic fitting method based on temperature equalization in one embodiment of the present invention.

[0061] Figure 2 This is a flowchart illustrating the IGBT temperature-sensitive characteristic fitting method based on temperature equalization in another embodiment of the present invention.

[0062] Figure 3 This is a schematic diagram of the structure of the PIN rectifier and MOSFET inside a press-fit IGBT device in one embodiment of the present invention;

[0063] Figure 4 This is a flowchart illustrating the IGBT temperature-sensitive characteristic fitting method based on temperature equalization in another embodiment of the present invention.

[0064] Figure 5 This is a flowchart illustrating the IGBT temperature-sensitive characteristic fitting method based on temperature equalization in another embodiment of the present invention.

[0065] Figure 6 This is a schematic diagram of the structure of a high-temperature test chamber in one embodiment of the present invention;

[0066] Figure 7 This is a schematic diagram of the structure of an IGBT temperature-sensitive characteristic fitting device based on temperature equalization in one embodiment of the present invention.

[0067] Figure 8 This is a schematic diagram of the IGBT temperature-sensitive characteristic fitting device based on temperature equalization in another embodiment of the present invention.

[0068] Figure 9 This is a schematic diagram of the IGBT temperature-sensitive characteristic fitting device based on temperature equalization in another embodiment of the present invention.

[0069] Figure 10 This is a schematic diagram of the physical structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0070] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention.

[0071] The information collected in the technical solution of this application is information and data authorized by the user or fully authorized by all parties. The collection, storage, use, processing, transmission, provision, disclosure and application of the relevant data all comply with the relevant laws, regulations and standards of the relevant countries and regions, necessary confidentiality measures have been taken, and they do not violate public order and good morals. Corresponding operation portals are provided for users to choose to authorize or refuse.

[0072] Provide users with corresponding operation entry points, allowing them to choose to agree to or reject the automated decision results; if the user chooses to reject, the process will proceed to the expert decision-making process.

[0073] Figure 6 This is a schematic diagram of the high-temperature test chamber 600 in an embodiment of the present invention. Figure 6 As shown, the high-temperature test chamber 600 includes a high-temperature test chamber shell 601, a chamber air inlet 602, a chamber air outlet 603, and a constant-temperature chamber 604. The high-temperature test chamber shell 601 has the chamber air inlet 602 and the chamber air outlet 603. The constant-temperature chamber 604 is located inside the high-temperature test chamber shell 601, and the press-fit IGBT device 605 to be tested is placed in the constant-temperature chamber 604. Before performing the temperature-equilibrium-based IGBT temperature-sensitive characteristic fitting method of this application, the press-fit IGBT device 605 needs to be placed inside the constant-temperature chamber 604. The temperature-equilibrium-based IGBT temperature-sensitive characteristic fitting method is then performed using a temperature-sensitive characteristic fitting device to extract the temperature-sensitive electrical parameters of the press-fit IGBT device 605 inside the constant-temperature chamber 604 and to perform parameter fitting on the extracted temperature-sensitive electrical parameters.

[0074] Figure 1 This is a flowchart illustrating the IGBT temperature-sensitive characteristic fitting method based on temperature equalization in an embodiment of the present invention. The main body executing this temperature-sensitive characteristic fitting method is the temperature-sensitive characteristic fitting device.

[0075] like Figure 1 As shown, the IGBT temperature-sensitive characteristic fitting method based on temperature equalization includes steps 101 to 105.

[0076] Step 101: Select the metal thin film in the constant temperature cavity 604 according to the pre-created metal thin film thermal diffusion model so as to form a uniform temperature field in the constant temperature cavity 604; the metal thin film thermal diffusion model is constructed based on the thermal diffusion coefficient of the metal thin film, the thermal conductivity of the metal thin film, the density of the metal thermally conductive thin film and the specific heat capacity of the metal material.

[0077] Step 102: Obtain the real-time temperature inside the thermostatic chamber 604.

[0078] Step 103: After the constant temperature cavity 604 reaches a stable state, the temperature-sensitive characteristics of the press-fit IGBT device 605 are extracted according to multiple preset temperature gradients to obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature in the constant temperature cavity 604 fluctuating within a preset temperature range under each preset temperature gradient.

[0079] Step 104: Perform data processing and analysis on the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0080] Step 105: Based on different current levels under different temperature gradients and their corresponding temperature-sensitive electrical parameter values, and the pre-established temperature-sensitive electrical parameter model, perform parameter fitting to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters and the relationship between current and temperature; the temperature-sensitive electrical parameter model is constructed based on the saturation voltage drop model of the rectifier, the drift region voltage drop, and the channel resistance saturation voltage drop model of the metal-oxide semiconductor field-effect transistor (MOSFET).

[0081] from Figure 1 As shown in the flowchart, in this embodiment of the invention, the metal thin film is selected using a metal thin film diffusion model to create a uniform temperature field within the constant temperature cavity, avoiding the impact of uneven temperature on the accuracy of subsequent extraction of temperature-sensitive electrical parameters caused by traditional heating methods. By acquiring the temperature within the constant temperature cavity in real time, once the temperature reaches a stable state, the temperature-sensitive characteristics of the press-fit IGBT device are extracted to obtain the temperature-sensitive electrical parameters. The obtained temperature-sensitive electrical parameters are then processed, analyzed, and fitted to obtain a three-dimensional model relating the temperature-sensitive electrical parameters to current and temperature, thereby improving the accuracy of temperature-sensitive characteristic extraction for the press-fit IGBT.

[0082] like Figure 1 As shown below, each step will be explained in detail.

[0083] Step 101: Select the metal thin film within the constant temperature cavity 604 according to the pre-constructed metal thin film thermal diffusion model to ensure a uniform temperature field within the cavity. The metal thin film thermal diffusion model is based on the thermal diffusivity α of the metal thin film, the thermal conductivity λ of the metal thin film, the density ρ of the thermally conductive metal thin film, and the specific heat capacity C of the metal material. p It was constructed.

[0084] Specifically, since the interior of the thermostatic cavity 604 is composed of a highly thermally conductive metal thin film, the metal thin film inside the thermostatic cavity 604 needs to be selected before heating the press-fit IGBT device 605. Because the thermal conductivity of the metal thin film is significantly better than that of air, heat can be transferred rapidly inside the metal thin film, thereby quickly forming a uniformly distributed temperature field within the thermostatic cavity 604.

[0085] The temperature field formed by the heat source in the metal thin film satisfies the thermal diffusion formula:

[0086]

[0087] Where T is the temperature inside the isothermal cavity, t is time, and α is the thermal diffusivity of the metal thin film. This represents the Laplace operator.

[0088] According to the thermal diffusion formula for the metal thin film, the larger the α, the stronger the diffusion ability of the heat source inside the metal thin film. That is, choosing a larger thermal diffusion coefficient α for the metal thin film can enable the temperature inside the constant temperature cavity 604 to reach a uniform state in a short time.

[0089] The thermal diffusivity α of different metal thin films was calculated using the formula for thermal diffusivity.

[0090] The pre-constructed thermal diffusion model of the metal thin film is based on the thermal diffusivity α of the metal thin film, the thermal conductivity λ of the metal thin film, the density ρ of the thermally conductive metal thin film, and the specific heat capacity C of the metal material. p It was constructed.

[0091] The formula for calculating the thermal diffusivity is:

[0092]

[0093] Where ρ is the density of the metal thin film, C p λ is the specific heat capacity of the metallic material, and λ is the thermal conductivity of the thin metal film.

[0094] In one embodiment, based on the thermal diffusivity formula and the thermal parameters of common metals at room temperature in Table 1, the thermal diffusivity α of different metal films at room temperature is obtained as shown in Table 2.

[0095] According to the formula for thermal diffusivity and Table 1, a metal thin film with a larger thermal diffusivity α has a higher thermal conductivity λ and lower density ρ and specific heat capacity C. p According to Table 2, the thermal diffusivity α of silver and copper is much greater than that of other metals. Since the larger the thermal diffusivity α, the stronger the thermal diffusivity of the metal film, silver foil or copper foil is selected as the metal heat-conducting film inside the 604 constant temperature cavity.

[0096]

[0097] Table 1 Thermal parameters of common metals at room temperature

[0098]

[0099] Table 2 Thermal diffusivity of common metals at room temperature

[0100] In this embodiment of the invention, based on the heat diffusion formula and the metal thin film heat diffusion model, metal thin films made of materials with high thermal conductivity, such as silver and copper, are selected to ensure that heat can be uniformly distributed within the constant temperature cavity. By selecting suitable metal materials to make the metal thin film, heat can be uniformly diffused within the constant temperature cavity, avoiding problems such as temperature unevenness caused by air flow and heat source location within the constant temperature cavity. This solves the problem that the temperature inside the press-fit IGBT device chip is lower than the set temperature due to uneven distribution of heating elements within the constant temperature cavity.

[0101] In one embodiment, before acquiring the real-time temperature within the constant temperature cavity 604, multiple high-precision thermocouples are first suspended within the constant temperature cavity 604. These thermocouples monitor the temperature within the constant temperature cavity 604 in real time to ensure that the temperature within the constant temperature cavity 604 remains stable during the subsequent extraction of the temperature-sensitive characteristics of the press-fit IGBT device 605. The press-fit IGBT device 605 is then placed within the prepared constant temperature cavity 604. The constant temperature cavity 604 heats the air surrounding the press-fit IGBT device 605 to a high and stable temperature range, providing a high-temperature experimental environment for the subsequent extraction of the temperature-sensitive characteristics of the press-fit IGBT device 605.

[0102] Step 102: Obtain the real-time temperature inside the thermostatic chamber 604.

[0103] Specifically, the temperature inside the constant temperature cavity 604 is accurately obtained by real-time monitoring of the temperature inside the constant temperature cavity 604 through multiple high-precision thermocouples built into the constant temperature cavity 604.

[0104] Step 103: After the constant temperature cavity 604 reaches a stable state, the temperature-sensitive characteristics of the press-fit IGBT device 605 are extracted according to multiple preset temperature gradients to obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature in the constant temperature cavity 604 fluctuating within a preset temperature range under each preset temperature gradient.

[0105] Specifically, the junction temperature range of the press-fit IGBT device 605 generally fluctuates between 15°C and 125°C. Therefore, in this embodiment of the invention, the operating temperature range of the thermostatic cavity 604 can be set to 15°C to 125°C. Typically, the operating temperature range of the thermostatic cavity 604 is set higher than the target measured temperature level to compensate for heat loss during heat transfer; however, this invention is not limited to this. Here, the junction temperature of the press-fit IGBT device 605 refers to the actual operating temperature of the press-fit IGBT device 605.

[0106] To obtain the temperature-sensitive electrical parameters more accurately, multiple temperature gradients are typically set within the operating temperature range of the constant temperature cavity 604. For example, a temperature gradient can be set every 5°C, but this invention is not limited thereto.

[0107] In one embodiment, the operating temperature range of the constant temperature cavity 604 according to the present invention is 15°C to 125°C. 15°C can be taken as the first temperature gradient, then the second temperature gradient is 20°C, the third temperature gradient is 25°C, and so on, until the 22nd temperature gradient is 125°C.

[0108] The external display panel of the thermostatic cavity 604 displays the temperature reading of the built-in thermocouple in real time, i.e., the internal temperature of the thermostatic cavity 604. By monitoring the external digital display of the thermostatic cavity 604, when the reading of the built-in thermocouple fluctuates within a preset temperature range under a preset temperature gradient, it indicates that the internal temperature of the thermostatic cavity 604 has reached a stable state. The temperature-sensitive electrical parameters of the press-fit IGBT device 605 inside the thermostatic cavity 604 are then measured using electronic testing equipment. The preset temperature range is ±0.1℃, and the temperature-sensitive electrical parameters include the total saturation voltage drop VT. F,IGBT and opening time T on Electronic testing equipment can include current and voltage measuring devices, voltmeters, ammeters, multimeters, and LCR testers, etc., but this invention is not limited thereto.

[0109] For example, when the preset temperature gradient is 20℃, the upper limit of the temperature range under this temperature gradient is 20.1℃, and the lower limit of the temperature range is 19.9℃. If the real-time temperature in the constant temperature cavity 604 is monitored to fluctuate within the above temperature range, it indicates that the temperature in the constant temperature cavity 604 has reached a stable state, and the temperature-sensitive electrical parameters of the press-fit IGBT device 605 in the constant temperature cavity 604 can be measured by current and voltage measuring equipment.

[0110] After obtaining the temperature-sensitive electrical parameters for each preset temperature gradient, these parameters are transmitted to the data processing module for data processing and analysis. The following section uses the total saturation voltage drop V from the temperature-sensitive electrical parameters as an example. F,IGBT Let's take an example to illustrate.

[0111] Step 104: Perform data processing and analysis on the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0112] In one embodiment, such as Figure 2 As shown, step 104 also includes steps 201 to 202.

[0113] Step 201: Perform data filtering on the voltage between the collector and emitter of the press-fit IGBT device 605 and the current of the internal chip of the press-fit IGBT device 605 to obtain the filtered waveform.

[0114] Specifically, measuring the temperature-sensitive electrical parameters of the press-fit IGBT device 605 within the constant temperature chamber 604 includes: acquiring the saturation voltage between the collector and emitter of the press-fit IGBT device 605, i.e., the total saturation voltage drop V. F,IGBT And the current I inside the 605 press-fit IGBT device. C .

[0115] In one embodiment, the temperature-sensitive electrical parameters of the press-fit IGBT device 605 include dynamic parameters and static parameters. The static parameters include the total saturation voltage drop V between the collector and emitter. F,IGBT and the blocking voltage V between the collector and emitter CES Dynamic parameters include activation time T. on Shutdown time T off , turn-on loss E on and shutdown loss E off wait.

[0116] The total saturation pressure drop V mentioned above is processed by the data processing module. F,IGBT and chip current I C Data filtering is performed to obtain waveforms after interference is removed, thereby reducing the impact of electromagnetic interference during the acquisition process on subsequent parameter fitting.

[0117] In one embodiment, a low-pass filter or band-pass filter or other components can be set in the data processing module to perform data filtering processing on the acquired data.

[0118] Step 202: Extract the above filtered waveform to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0119] Specifically, the current I under different temperature gradients is extracted from the waveforms after interference filtering displayed by the data processing module, as shown in Tables 3 and 4. C and its corresponding total saturation pressure drop V F,IGBT The specific value.

[0120] For example, when the actual temperature gradient is 23.6℃, ​​under this temperature gradient, different currents I... C The corresponding total saturation pressure drop V F,IGBT The values ​​are shown in Table 3:

[0121] 23.6 0.401785714 0.709937518 23.6 0.683035714 0.770857716 23.6 1.017857143 0.837401318 23.6 1.46875 0.901601835 23.6 2.022321429 0.962053416 23.6 2.616071429 1.021565101 23.6 3.28125 1.077791837 23.6 4 1.131207237 23.6 4.700892857 1.17806285 23.6 5.361607143 1.220701458

[0122] Table 3. Values ​​of different currents and their corresponding saturation voltage drops under different temperature gradients.

[0123] In one embodiment, as shown in Table 3, for example, the current I can be... C Values ​​of 0.401785714 and 0.683035714 are considered to be of the same current rating, but this invention is not limited thereto.

[0124] For example, when the actual temperature gradient is 35.3℃, under this temperature gradient, different currents I... C The corresponding total saturation pressure drop V F,IGBT The values ​​are shown in Table 4:

[0125] 35.3 5.540178571 1.231946805 35.3 6.232142857 1.272711189 35.3 6.919642857 1.313944129 35.3 7.638392857 1.351428619 35.3 8.339285714 1.388444554 35.3 9.049107143 1.424991932 35.3 9.785714286 1.461070755 35.3 10.43245653 1.492932572 35.3 11.14132858 1.522451608 35.3 11.82345074 1.551970645

[0126] Table 4. Values ​​of different currents and their corresponding saturation voltage drops under different temperature gradients.

[0127] In one embodiment, as shown in Table 4, for example, the current I can be... C Values ​​9.049107143 and 9.785714286 are considered to be of the same current rating, but this invention is not limited thereto.

[0128] In this embodiment of the invention, because the temperature inside the constant temperature chamber is very uniform, the measured temperature-sensitive electrical parameters can accurately reflect the electrical characteristics of the press-fit IGBT device under a set temperature gradient. By processing and analyzing the measured temperature-sensitive electrical parameters through a data processing module, different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients are obtained. This improves the accuracy of extracting the temperature-sensitive characteristics of the press-fit IGBT device and provides more reliable temperature-sensitive characteristic data support for the subsequent construction of a three-dimensional model of temperature-sensitive electrical parameters, current, and junction temperature.

[0129] like Figure 3 As shown, the temperature-sensitive electrical parameter model is based on the MOSFET's channel resistance, saturation voltage drop, and drift region voltage drop V. M And the saturation voltage drop construction of the PIN rectifier.

[0130] Specifically, the internal structure of the press-fit IGBT device 605 includes: a PIN rectifier and a MOSFET operating in the linear region, wherein the PIN rectifier and the MOSFET are connected in series. The total saturation voltage drop V of the press-fit IGBT device... F,IGBTThis can be equivalent to the sum of the saturation voltage drop of the MOSFET channel resistance and the saturation voltage drop of the PIN rectifier. The formula for calculating the saturation voltage drop of the PIN rectifier is:

[0131]

[0132] Where k is the Boltzmann constant, T is the junction temperature of the press-fit IGBT device (in this embodiment, it is the temperature inside the isothermal cavity), q is the charge quantity, and J... C W is the collector current surface density. N D is the width of the drift region. a n is the bipolar diffusion coefficient. i L represents the intrinsic carrier concentration. a is the bipolar diffusion length.

[0133] Specifically, the formula for calculating the saturation voltage drop of a PIN rectifier is as follows: The calculation formula is:

[0134]

[0135] Among them, W N L is the width of the drift region. a V is the bipolar diffusion length, q is the charge, k is the Boltzmann constant, T is the junction temperature of the press-fit IGBT device, and in this embodiment, it is the temperature inside the isothermal cavity. M This represents the voltage drop in the drift region.

[0136] Furthermore, when the MOSFET operates in the linear region, the formula for calculating the MOSFET's channel resistance saturation voltage drop is:

[0137]

[0138] Where p is the cell pitch, J C L is the collector current surface density. CH μ is the channel length. ni C represents the channel mobility. OX V is the gate oxide capacitance. G V is the gate drive voltage. TH This is the gate threshold voltage.

[0139] Since the total saturation voltage drop of a press-fit IGBT device is equal to the sum of the saturation voltage drop of the MOSFET channel resistance and the saturation voltage drop of the PIN rectifier, the formula for calculating the total saturation voltage drop of a press-fit IGBT device is:

[0140]

[0141] Where k is the Boltzmann constant, T is the junction temperature of the press-fit IGBT device (in this embodiment, it is the temperature inside the isothermal cavity), q is the charge quantity, and J... C W is the collector current surface density. N D is the width of the drift region. a n is the bipolar diffusion coefficient. i L represents the intrinsic carrier concentration. a V is the bipolar diffusion length. M Let p be the voltage drop in the drift region, and L be the cell pitch. CH μ is the channel length. ni C represents the channel mobility. OX For the gate oxide capacitance, v G V is the gate drive voltage. TH This is the gate threshold voltage.

[0142] In one embodiment, the total saturation voltage drop V of the press-fit IGBT device can be obtained according to the calculation formula of the total saturation voltage drop of the press-fit IGBT device. F,IGBT The relationship between the temperature T inside the constant temperature chamber and the current level.

[0143] Specifically, as can be seen from the above formula, the saturation pressure drop V F,IGBT It is linearly related to the temperature T inside the isothermal cavity, but the saturation pressure drop V F,IGBT The temperature-sensitive linearity is affected by the original parameters of the press-fit IGBT device chip and the aforementioned current rating.

[0144] When the gate drive voltage V G Larger and collector current surface density J C When the current is relatively small, i.e., when the press-fit IGBT device is turned on by a small current, the saturation voltage drop of the PIN rectifier in the total saturation voltage drop formula of the press-fit IGBT device dominates, and the saturation voltage drop V0 F,IGBT It has a negative temperature coefficient. As the aforementioned current levels increase, the collector current of the press-fit IGBT device increases exponentially with the saturation voltage drop V. F,IGBT The saturation pressure drop V increases with the increase of [something], while [something] increases with the increase of [something F,IGBT The linearity of temperature sensitivity will gradually decrease.

[0145] Step 105: Based on different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients, and the pre-established temperature-sensitive electrical parameter model, perform parameter fitting to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters, current, and temperature. In this embodiment, the pre-established temperature-sensitive electrical parameter model is the total saturation voltage drop formula for the aforementioned press-fit IGBT device; however, other temperature-sensitive electrical parameter formulas may also be used, and this invention is not limited to these.

[0146] Specifically, based on the total saturation voltage drop V of the obtained press-fit IGBT deviceF,IGBT The relationship between the temperature T inside the constant temperature chamber and the current level was investigated, and parameter fitting was performed on different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0147] Due to the temperature T and total saturation pressure drop V inside the thermostatic cavity F,IGBT The correlation is linear; therefore, during parameter fitting, the temperature T inside the isothermal cavity is always of first order. The current I... C The total saturation voltage drop formula for press-fit IGBT devices exhibits a logarithmic relationship, therefore, it is necessary to consider the current I... C A high-order expansion is performed to accurately fit the relationship between the temperature-sensitive electrical parameters and temperature.

[0148] In one embodiment, parameter fitting can be performed using methods such as Least Squares, Nonlinear Least Squares, Levenberg-Marquardt algorithm, trust-region-reflective algorithm, and Dynamic Thermoelectric Parameter Method (TSEP).

[0149] The three-dimensional model relating the temperature-sensitive electrical parameters to current and temperature, constructed using the above parameter fitting method, is as follows:

[0150]

[0151] Where P(T) is the temperature-sensitive electrical parameter value, T is the temperature inside the constant temperature cavity, and a n b are the fitting parameters, and k is the highest order of the fitting.

[0152] Based on the constructed three-dimensional model relating the temperature-sensitive electrical parameters to current and temperature, a three-dimensional fitting surface relating the temperature-sensitive electrical parameters to current and temperature is obtained.

[0153] To ensure the accuracy of the extracted temperature-sensitive electrical parameters, the measured parameters were verified using data validation and temperature correction methods.

[0154] In one embodiment, such as Figure 4 As shown, the above-mentioned IGBT temperature-sensitive characteristic fitting method based on temperature equalization also includes steps 401 to 402.

[0155] Step 401: During the extraction of temperature-sensitive characteristics of the press-fit IGBT device 605, it is determined whether the real-time temperature is within the preset temperature range; wherein, the preset temperature range includes a preset lower limit and a preset upper limit, which are determined according to the temperature control range of the constant temperature cavity 604.

[0156] Step 402: If the real-time temperature is lower than the preset lower limit or higher than the preset upper limit, the temperature in the constant temperature cavity 604 is dynamically adjusted according to the preset temperature correction rule so that the temperature in the constant temperature cavity 604 remains stable.

[0157] Specifically, during the extraction of temperature-sensitive characteristics from the press-fit IGBT device 605, it is determined whether the real-time temperature within the thermostatic cavity 604 is within a preset temperature range. For example, when the preset temperature gradient is 20℃, the upper limit of the temperature range under this temperature gradient is 20.1℃, and the lower limit is 19.9℃. If the real-time temperature within the thermostatic cavity 604 is detected to be lower than the lower limit of the temperature range (19.9℃) or higher than the upper limit of the temperature range (20.1℃), the temperature within the thermostatic cavity 604 is dynamically adjusted according to a preset temperature correction rule to maintain a stable temperature within the thermostatic cavity 604.

[0158] In one embodiment, such as Figure 5 As shown, step 402 also includes steps 501 and 503.

[0159] Step 501: Monitor the real-time temperature collected by the suspended thermocouple.

[0160] Step 502: When the real-time temperature is lower than the preset lower limit, the heating element is controlled by the heating controller to heat the constant temperature cavity 604.

[0161] Step 503: When the real-time temperature is higher than the preset upper temperature limit, the heating element is controlled by the heating controller to stop heating the constant temperature chamber 604.

[0162] Specifically, taking a set temperature gradient of 20°C as an example, the upper limit of the temperature range under this temperature gradient is 20.1°C, and the lower limit is 19.9°C. When the real-time temperature collected by the suspended thermocouple is lower than the lower limit of the temperature range (19.9°C), a small amount of power is applied to the heating element through the heating controller to heat the constant temperature cavity 604. When the real-time temperature collected by the suspended thermocouple is higher than the upper limit of the temperature range (20.1°C), the heating element is turned off through the heating controller to allow the temperature inside the constant temperature cavity 604 to decrease slowly.

[0163] In this embodiment of the invention, during the extraction of temperature-sensitive characteristics from a press-fit IGBT device, the real-time temperature is dynamically adjusted by determining whether it is within a preset temperature range and by dynamically controlling the heating element through a heating controller. Real-time temperature feedback from thermocouples is used to correct for any minor temperature deviations that may occur during the extraction of temperature-sensitive characteristics from the press-fit IGBT device, ensuring that the temperature within the constant-temperature cavity fluctuates within a preset temperature gradient of ±0.1℃.

[0164] In one embodiment, after extracting the temperature-sensitive electrical parameters of the press-fit IGBT device 605, the temperature-sensitive electrical parameters measured in the constant temperature chamber 604 can be compared with the temperature-sensitive characteristic curves of the press-fit IGBT device 605 at different junction temperatures in the datasheet, and the deviation of the measured temperature-sensitive electrical parameters from the aforementioned curves can be calculated. Then, the temperature-sensitive characteristic measurement data obtained by heating with a conventional heating plate is compared with the temperature-sensitive characteristic curves of the press-fit IGBT device 605 at different junction temperatures to verify that the present invention has a better effect on temperature equalization than the heating effect of a conventional heating plate.

[0165] In this embodiment of the invention, a high thermal conductivity metal thin film is used to construct the constant temperature cavity, achieving a uniform temperature distribution within the press-fit IGBT device and avoiding the temperature unevenness problem caused by traditional heating plates. By combining a high-temperature test chamber with the constant temperature cavity, the accuracy of extracting the temperature-sensitive electrical parameters of the press-fit IGBT device is effectively improved. Through the combination of thermocouples and a real-time temperature correction mechanism, dynamic temperature correction within the constant temperature cavity is achieved, improving the temperature stability within the constant temperature cavity during the extraction of the temperature-sensitive electrical parameters of the press-fit IGBT device.

[0166] This invention also provides an IGBT temperature-sensitive characteristic fitting device based on temperature equalization, as described in the following embodiments. Since the principle behind this device is similar to the IGBT temperature-sensitive characteristic fitting method based on temperature equalization, its implementation can be found in the implementation of the IGBT temperature-sensitive characteristic fitting method based on temperature equalization; repeated details will not be elaborated further.

[0167] Figure 7 This is a schematic diagram of the IGBT temperature-sensitive characteristic fitting device based on temperature equalization in an embodiment of the present invention. Figure 7 As shown, the temperature-sensitive characteristic fitting device 700 includes: a thin film selection module 701, a temperature acquisition module 702, a temperature-sensitive electrical parameter extraction module 703, a data processing module 704, and a parameter fitting module 705.

[0168] The thin film selection module 701 is used to select the metal thin film in the constant temperature cavity 604 according to the pre-constructed metal thin film thermal diffusion model, so as to form a uniform temperature field in the constant temperature cavity 604; the metal thin film thermal diffusion model is constructed based on the thermal diffusion coefficient of the metal thin film, the thermal conductivity of the metal thin film, the density of the metal thermally conductive thin film, and the specific heat capacity of the metal material.

[0169] The temperature acquisition module 702 is used to acquire the real-time temperature inside the constant temperature cavity 604.

[0170] The temperature-sensitive electrical parameter extraction module 703 is used to extract the temperature-sensitive characteristics of the press-fit IGBT device 605 according to multiple preset temperature gradients after the constant temperature cavity 604 reaches a stable state, and obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature in the constant temperature cavity 604 fluctuating within a preset temperature range under each preset temperature gradient.

[0171] The data processing module 704 is used to process and analyze the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0172] The parameter fitting module 705 is used to fit parameters based on different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients and a pre-established temperature-sensitive electrical parameter model, to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters and the relationship between current and temperature; the temperature-sensitive electrical parameter model is constructed based on the channel resistance saturation voltage drop model of the metal oxide semiconductor field-effect transistor, the drift region voltage drop, and the saturation voltage drop model of the rectifier.

[0173] The parameter fitting module 705 includes a unit for establishing a channel resistance saturation voltage drop model, a unit for establishing a rectifier saturation voltage drop model, and a unit for establishing a temperature-sensitive electrical parameter model.

[0174] A channel resistance saturation voltage drop model unit is established to construct a channel resistance saturation voltage drop model for metal-oxide-semiconductor field-effect transistors based on the junction temperature, collector current surface density, drift region width, and bipolar diffusion length of the IGBT device.

[0175] A rectifier saturation voltage drop model unit is established to construct the rectifier saturation voltage drop model based on the collector current surface density, gate oxide capacitance, gate drive voltage, and gate threshold voltage.

[0176] A temperature-sensitive electrical parameter model unit is established to construct the temperature-sensitive electrical parameter model based on the saturation voltage drop model of the rectifier, the drift region voltage drop, and the channel resistance saturation voltage drop model.

[0177] The temperature-sensitive characteristic fitting device 700 mentioned above also includes a temperature determination module 706 and a temperature correction module 707.

[0178] The temperature determination module 706 is used to determine whether the real-time temperature is within the preset temperature range during the extraction of temperature-sensitive characteristics of the press-fit IGBT device 605; wherein the preset temperature range includes a preset lower temperature limit and a preset upper temperature limit, which are determined according to the temperature control range of the constant temperature cavity 604.

[0179] The temperature correction module 707 is used to dynamically adjust the temperature in the constant temperature cavity 604 according to a preset temperature correction rule when the real-time temperature is lower than the preset lower limit or higher than the preset upper limit, so as to keep the temperature in the constant temperature cavity 604 stable.

[0180] like Figure 8 As shown, the data processing module 704 includes a data filtering unit 801 and a waveform parameter extraction unit.

[0181] The data filtering unit 801 is used to perform data filtering on the voltage between the collector and emitter of the pressure-fit IGBT device 605 and the current of the internal chip to obtain the filtered waveform.

[0182] The waveform parameter extraction unit 802 is used to extract the filtered waveform to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

[0183] like Figure 9 As shown, the temperature correction module 707 includes a temperature monitoring unit 901, a first control unit, and a second control unit 903.

[0184] Temperature monitoring unit 901 is used to monitor the real-time temperature collected by the suspended thermocouple.

[0185] The first control unit 902 is used to control the heating element to heat the constant temperature cavity 604 when the real-time temperature is lower than the preset lower limit.

[0186] The second control unit 903 is used to control the heating element to stop heating the constant temperature cavity 604 when the real-time temperature is higher than the preset temperature upper limit.

[0187] The temperature-sensitive electrical parameter model is as follows:

[0188]

[0189] Where k is the Boltzmann constant, T is the junction temperature of the press-fit IGBT device, q is the charge, and J is the weight of the charge. C W is the collector current surface density. N D is the width of the drift region. a n is the bipolar diffusion coefficient. i L represents the intrinsic carrier concentration. N V is the bipolar diffusion length. M Let p be the voltage drop in the drift region, and L be the cell pitch. CH μ is the channel length. ni C represents the channel mobility. OX V is the gate oxide capacitance. G V is the gate drive voltage.TH V is the gate threshold voltage. F,IGBT This represents the total saturation voltage drop of the press-fit IGBT device.

[0190] Figure 10 This is a schematic diagram of the physical structure of the electronic device 100 provided in an embodiment of the present invention, as shown below. Figure 10 As shown, the electronic device 100 includes a processor 1001, a memory 1002, and a bus 1003.

[0191] The processor 1001 and the memory 1002 communicate with each other via the bus 1003.

[0192] The processor 1001 is used to call program instructions in the memory 1002 to execute the methods provided in the above-described method embodiments.

[0193] This invention also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization.

[0194] This invention also provides a computer program product, which includes a computer program that, when executed by a processor, implements the above-described method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization.

[0195] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0196] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0197] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0198] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0199] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization, characterized in that, include: The metal thin film in the constant temperature cavity is selected according to the pre-constructed metal thin film thermal diffusion model so as to form a uniform temperature field in the constant temperature cavity. The metal thin film thermal diffusion model is constructed based on the thermal diffusion coefficient of the metal thin film, the thermal conductivity of the metal thin film, the density of the thermally conductive metal thin film, and the specific heat capacity of the metal material. The selection of the metal film in the constant temperature cavity includes: selecting a metal material to make a metal film, so that heat is evenly diffused within the constant temperature cavity, so that the heat source in the constant temperature cavity quickly forms a uniformly distributed temperature field; and obtaining the real-time temperature within the constant temperature cavity. Once the constant temperature cavity reaches a stable state, the temperature-sensitive characteristics of the IGBT device are extracted according to multiple preset temperature gradients to obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature fluctuation within the constant temperature cavity under each preset temperature gradient within a preset temperature range. Data processing and analysis of the temperature-sensitive electrical parameters were performed to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients. Based on different current levels under different temperature gradients and their corresponding temperature-sensitive electrical parameter values, and a pre-established temperature-sensitive electrical parameter model, parameter fitting is performed to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters, current, and temperature; wherein, the temperature-sensitive electrical parameter model is constructed based on the rectifier's saturation voltage drop model, drift region voltage drop, and channel resistance saturation voltage drop model. The step of processing and analyzing the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients includes: performing data filtering on the voltage between the collector and emitter of the IGBT device and the current of the internal chip to obtain a filtered waveform; and extracting the filtered waveform to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

2. The method according to claim 1, characterized in that, The method further includes: During the extraction of temperature-sensitive characteristics of IGBT devices, it is determined whether the real-time temperature is within the preset temperature range; wherein, the preset temperature range includes a preset lower limit and a preset upper limit, which are determined based on the temperature control range of the constant temperature cavity; If the real-time temperature is lower than the preset lower limit or higher than the preset upper limit, the temperature inside the constant temperature cavity is dynamically adjusted according to the preset temperature correction rule so that the temperature inside the constant temperature cavity remains stable.

3. The method according to claim 2, characterized in that, The temperature inside the constant temperature chamber is dynamically adjusted according to a preset temperature correction rule to maintain a stable temperature within the chamber, including: Detect the real-time temperature collected by the suspended thermocouple; When the real-time temperature is lower than the preset lower limit, the heating controller controls the heating element to heat the constant temperature cavity; When the real-time temperature is higher than the preset upper temperature limit, the heating controller controls the heating element to stop heating the constant temperature cavity.

4. The method according to claim 1, characterized in that, The steps for constructing the temperature-sensitive electrical parameter model include: A channel resistance saturation voltage drop model for metal-oxide-semiconductor field-effect transistors is constructed based on the junction temperature, collector current surface density, drift region width, and bipolar diffusion length of the IGBT device. A saturation voltage drop model of the rectifier is constructed based on the collector current surface density, gate oxide capacitance, gate drive voltage, and gate threshold voltage. The temperature-sensitive electrical parameter model is constructed based on the saturation voltage drop model of the rectifier, the drift region voltage drop, and the channel resistance saturation voltage drop model.

5. The method according to claim 4, characterized in that, The temperature-sensitive electrical parameter model is as follows: in, Boltzmann's constant, This refers to the junction temperature of the IGBT device. For charge quantity, The collector current surface density, The width of the drift region, The bipolar diffusion coefficient, Intrinsic carrier concentration, The bipolar diffusion length, For the voltage drop in the drift region, Cellular distance, The length of the channel. For channel migration rate, For gate oxide capacitance, This is the gate drive voltage. This is the gate threshold voltage. This represents the total saturation voltage drop of the IGBT device.

6. A device for fitting the temperature-sensitive characteristics of IGBTs based on temperature equalization, characterized in that, include: The thin film selection module is used to select the metal thin film in the constant temperature cavity according to the pre-built metal thin film thermal diffusion model, so as to form a uniform temperature field in the constant temperature cavity. The metal thin film thermal diffusion model is constructed based on the thermal diffusion coefficient of the metal thin film, the thermal conductivity of the metal thin film, the density of the thermally conductive metal thin film, and the specific heat capacity of the metal material. The selection of the metal film in the constant temperature cavity includes: selecting a metal material to make a metal film, so that heat is evenly diffused in the cavity of the constant temperature cavity, so that the heat source in the constant temperature cavity can quickly form a uniformly distributed temperature field. Temperature acquisition module is used to obtain the real-time temperature inside the constant temperature chamber; The temperature-sensitive electrical parameter extraction module is used to extract the temperature-sensitive characteristics of the IGBT device according to multiple preset temperature gradients after the constant temperature cavity reaches a stable state, and obtain the temperature-sensitive electrical parameters under each preset temperature gradient; wherein, the stable state is the temperature in the constant temperature cavity fluctuating within a preset temperature range under each preset temperature gradient. The data processing module is used to process and analyze the temperature-sensitive electrical parameters to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients. The parameter fitting module is used to fit parameters to different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients and a pre-established temperature-sensitive electrical parameter model, so as to obtain a three-dimensional model of the fitted temperature-sensitive electrical parameters and the relationship between current and temperature; the temperature-sensitive electrical parameter model is constructed based on the rectifier's saturation voltage drop model, drift region voltage drop and channel resistance saturation voltage drop model. The data processing module includes: The data filtering unit is used to filter the collected voltage between the collector and emitter of the IGBT device and the current of the internal chip to obtain the filtered waveform. The waveform parameter extraction unit extracts the filtered waveform to obtain different current levels and their corresponding temperature-sensitive electrical parameter values ​​under different temperature gradients.

7. The apparatus according to claim 6, characterized in that, The device further includes: A temperature determination module is used to determine whether the real-time temperature is within the preset temperature range during the extraction of the temperature-sensitive characteristics of the IGBT device; wherein the preset temperature range includes a preset lower temperature limit and a preset upper temperature limit, which are determined based on the temperature control range of the constant temperature cavity; The temperature correction module is used to dynamically adjust the temperature inside the constant temperature cavity according to a preset temperature correction rule when the real-time temperature is lower than the preset lower limit or higher than the preset upper limit, so as to keep the temperature inside the constant temperature cavity stable.

8. The apparatus according to claim 7, characterized in that, The temperature calibration module includes: Temperature monitoring unit, used to monitor the real-time temperature collected by the suspended thermocouple; The first control unit is used to control the heating element to heat the constant temperature cavity using a heating controller when the real-time temperature is lower than the preset lower limit. The second control unit is used to control the heating element to stop heating the constant temperature cavity when the real-time temperature is higher than the preset temperature upper limit.

9. The apparatus according to claim 7, characterized in that, The parameter fitting module includes: A channel resistance saturation voltage drop model unit is established to construct a channel resistance saturation voltage drop model for metal-oxide-semiconductor field-effect transistors based on the junction temperature, collector current surface density, drift region width, and bipolar diffusion length of the IGBT device. A rectifier saturation voltage drop model unit is established to construct a rectifier saturation voltage drop model based on the collector current surface density, gate oxide capacitance, gate drive voltage, and gate threshold voltage. A temperature-sensitive electrical parameter model unit is established to construct the temperature-sensitive electrical parameter model based on the saturation voltage drop model of the rectifier, the drift region voltage drop, and the channel resistance saturation voltage drop model.

10. The apparatus according to claim 9, characterized in that, The temperature-sensitive electrical parameter model is as follows: in, Boltzmann's constant, This refers to the junction temperature of the IGBT device. For charge quantity, The collector current surface density, The width of the drift region, The bipolar diffusion coefficient, Intrinsic carrier concentration, The bipolar diffusion length, For the voltage drop in the drift region, Cellular distance, The length of the channel. For channel migration rate, For gate oxide capacitance, This is the gate drive voltage. This is the gate threshold voltage. This represents the total saturation voltage drop of the IGBT device.

11. A computer device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the method of any one of claims 1 to 5.

12. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the method of any one of claims 1 to 5.

13. A computer program product, characterized in that, The computer program product includes a computer program that, when executed by a processor, implements the method of any one of claims 1 to 5.

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