A planetary wheel and its manufacturing method

Abstract

This application provides a planetary gear, comprising a substrate and a coating; the substrate includes two opposing substrate surfaces; the coating is disposed on at least one substrate surface, the coating being a Si-doped coating, and the Si doping amount of the coating decreasing in the thickness direction away from the substrate surface; the coating includes a connecting layer and a functional layer, the connecting layer being disposed between the functional layer and the substrate surface; the maximum Si doping amount in the connecting layer ranges from 40 mol% to 60 mol%; the functional layer is a Si-doped DLC layer, the Si doping amount in the functional layer ranges from 1 mol% to 4 mol%, and the ratio of the thickness of the functional layer to the total thickness of the coating ranges from 0.6 to 0.8. This application also provides a method for manufacturing the planetary gear. In this application, by setting a Si-doped coating on the surface of the planetary gear, the surface hardness of the planetary gear is increased, avoiding heavy metal contamination during wafer polishing. Furthermore, by setting a multi-layer structure with varying Si contents, both the requirement for increased surface wear resistance and the requirement for bonding are met.

Description

Technical Field

[0001] This application relates to the field of crystal material processing technology, and in particular to a planetary wheel and its manufacturing method. Background Technology

[0002] In wafer fabrication, planetary wheels are essential equipment for polishing. With the continuous advancement of integrated circuit processes and technologies, semiconductor manufacturing has developed rapidly, and production output has increased significantly, placing ever higher demands on the wear resistance, deformation resistance, and service life of planetary wheels. The wear resistance of the planetary wheel has a significant impact on the service life of consumables used in the polishing process.

[0003] Conventional planetary wheels in conventional technology generally have the following problems due to their own materials and other reasons: low surface wear resistance, short service life, high consumable costs, poor adhesion of the film layer on the planetary wheel surface, easy to fall off, and heavy metal pollution for planetary wheels using metal bonding layers, which can easily cause semiconductor wafer performance degradation or even scrap. Summary of the Invention

[0004] To address one of the aforementioned problems, this application provides a planetary wheel whose surface coating has advantages such as excellent wear resistance, long service life, strong coating adhesion, resistance to peeling, absence of metal layer, and absence of heavy metal pollution.

[0005] To achieve the above objectives, the technical solution adopted in this application is as follows:

[0006] This application discloses a planetary gear, which includes a substrate and a coating. The substrate includes two opposing substrate surfaces. The coating is disposed on at least one substrate surface and is a Si-doped coating. The Si doping amount of the coating decreases in the thickness direction away from the substrate surface. The coating includes a connecting layer and a functional layer. The connecting layer is disposed between the functional layer and the substrate surface. The maximum Si doping amount in the connecting layer ranges from 40 mol% to 60 mol%. The functional layer is a Si-doped DLC layer. The Si doping amount in the functional layer is a preset doping amount, ranging from 1 mol% to 4 mol%. The ratio of the thickness of the functional layer to the total thickness of the coating ranges from 0.6 to 0.8.

[0007] Furthermore, the connecting layer includes a bonding layer and a transition layer. One side of the bonding layer is bonded to the corresponding substrate surface on the coating, and one side of the transition layer is bonded to the functional layer.

[0008] Furthermore, the ratio of the thickness of the bonding layer to the thickness of the transition layer ranges from 0.8 to 1.2.

[0009] Furthermore, the bonding layer includes a first sublayer and a first stabilizing layer. The Si doping amount in the first sublayer is reduced from the maximum doping amount to the intermediate doping amount, and the Si doping amount in the first stabilizing layer is the same as the intermediate doping amount.

[0010] Furthermore, the bonding layer is a Si-doped DLC layer.

[0011] Furthermore, the ratio of the thickness of the first sublayer to the thickness of the first stabilizing layer ranges from 4 to 6.

[0012] Furthermore, the intermediate doping amount ranges from 5 mol% to 8.5 mol%.

[0013] Furthermore, the transition layer includes a second sublayer and a second stabilizing layer. The Si doping amount in the second sublayer is reduced from the intermediate doping amount to the minimum doping amount, and the Si doping amount in the second stabilizing layer is the same as the minimum doping amount.

[0014] Furthermore, the ratio of the thickness of the second sublayer to the thickness of the second stabilizing layer ranges from 1.5 to 2.5.

[0015] Furthermore, the transition layer is a Si-doped DLC layer.

[0016] Furthermore, the minimum doping amount ranges from 2 mol% to 5 mol%.

[0017] Another aspect of this application discloses a method for manufacturing a planetary wheel, the method comprising the following steps:

[0018] A bonding layer is formed by depositing a coating on the surface of a substrate to reduce the Si doping level from the maximum doping level to the minimum doping level.

[0019] A functional layer is deposited on the bonding layer to maintain the Si doping amount at a preset doping amount, thus obtaining the functional layer; the preset doping amount is less than or equal to the minimum doping amount.

[0020] Further, the preparation of the bonding layer includes: depositing a film on the surface of a substrate with the maximum doping amount as the initial doping amount; gradually reducing the doping amount to an intermediate doping amount and maintaining the intermediate doping amount for a period of time; continuing to reduce the doping amount to the minimum doping amount; maintaining the minimum doping amount for a period of time; and obtaining the bonding layer.

[0021] Furthermore, the manufacturing method is plasma-enhanced chemical vapor deposition, and the raw material gases used in preparing the coating using plasma-enhanced chemical vapor deposition include silicon source and carbon source;

[0022] The Si doping level in the interconnect layer is reduced from the maximum doping level to the intermediate doping level by reducing the silicon source and increasing the carbon source flux; the Si doping level in the interconnect layer is reduced from the intermediate doping level to the minimum doping level by keeping the carbon source constant and reducing the silicon source flux.

[0023] The Si doping level of the functional layer converges to the preset doping level by maintaining the silicon source constant and increasing the flux of the carbon source.

[0024] Furthermore, the silicon source includes at least one of siloxanes or alkylsiloxanes, and the carbon source includes at least one of hydrocarbons.

[0025] Furthermore, the silicon source includes at least one of hexamethyldisiloxane or disiloxane, and the carbon source includes acetylene.

[0026] Therefore, this application has at least the following beneficial effects:

[0027] 1. In this application, the surface hardness of the planetary gear is increased by setting a Si-doped DLC functional layer on the surface of the planetary gear.

[0028] 2. In this application, Si-doped coating is used to replace the traditional metal bonding layer, thus avoiding the problem of heavy metal contamination during wafer polishing.

[0029] 3. In this application, by setting a two-layer structure with different Si content in each layer, it is possible to both increase the wear resistance of the planetary wheel surface and meet the bonding requirements between the coating and the planetary wheel substrate. Attached Figure Description

[0030] Figure 1 This is a cross-sectional structural diagram of the planetary wheel in one embodiment of this application;

[0031] Figure 2 This is a cross-sectional structural diagram of the coating according to the first embodiment of this application;

[0032] Figure 3 This is a cross-sectional structural diagram of the coating according to the second embodiment of this application;

[0033] Figure 4 This is a cross-sectional structural diagram of the coating according to the third embodiment of this application;

[0034] Figure 5 This is a line graph showing the variation of Si doping amount in each layer in Examples 1 to 9 of this application;

[0035] Figure 6 This is a line graph showing the variation of Si doping amount in each layer in Examples 10 and 11 of this application;

[0036] Figure 7 This is a line graph showing the variation of Si doping amount in each layer in Examples 12 and 13 of this application;

[0037] Figure 8 This is a line graph showing the change in Si doping amount in Comparative Example 3;

[0038] Figure 9 This is a line graph showing the variation of Si doping amount in each layer of Comparative Example 4.

[0039] Figure 10 This is a line graph showing the variation of Si doping in each layer of Comparative Example 5.

[0040] In the figure: planetary wheel 100, substrate 11, coating 12, connecting layer 121, bonding layer 1211, first sublayer 1211a, first stabilizing layer 1211b, transition layer 1212, second sublayer 1212a, second stabilizing layer 1212b, functional layer 122. Detailed Implementation

[0041] To enable those skilled in the art to better understand the present application, the technical solutions in specific embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. In the description of the present application, the descriptions of "inner side" and "outer side" are based on the "substrate" mentioned below, that is, "inner side" refers to the side closer to the "substrate", and "outer side" refers to the side away from the "substrate". Specifically, if describing the inner or outer side of a component, the "inner side" of the component refers to the side of the component closer to the "substrate", and the "outer side" of the component refers to the side of the component away from the "substrate".

[0042] One aspect of this application provides a star wheel 100, such as Figure 1 As shown, the planetary wheel 100 includes a substrate 11 and a coating 12. The substrate 11 has two opposing substrate surfaces in its thickness direction. The coating 12 is bonded to at least one substrate surface of the substrate 11. For example, a corresponding coating 12 is provided on each of the substrate surfaces on both sides of the substrate 11.

[0043] The coating 12 is bonded to the surface of the substrate 11 by deposition or other methods, specifically by chemical vapor deposition, physical vapor deposition, evaporation, or sputtering. In this embodiment, the coating 12 is a silicon-doped coating and is also a non-metallic coating.

[0044] In the direction perpendicular to and away from the surface of the substrate 11, or in other words, in the thickness direction of the coating 12 away from the substrate surface, the Si doping amount of the coating 12 decreases. As the thickness of the coating 12 increases from the substrate surface, the Si doping amount decreases continuously or discontinuously (the Si doping amount remains constant between multiple continuous decreasing segments).

[0045] like Figure 2As shown, with the substrate surface as a reference, the coating 12 includes a connecting layer 121 and a functional layer 122 from the inside to the outside. The connecting layer 121 is located inside the coating 12 and one side of it is bonded to the corresponding substrate surface. The functional layer 122 is located outside the coating 12 and one side of it is bonded to the other side of the connecting layer 121. The other side of the functional layer 122 is exposed and forms the surface of the planetary wheel 100.

[0046] The main body of the planetary wheel 100 is provided with a circular hole for accommodating the wafer. During use, it drives the wafer in the circular hole to grind on the grinding surface to grind both sides of the wafer until they are flush with the surface of the functional layer.

[0047] The functional layer 122 is a silicon-doped diamond-like carbon film (i.e., a Si-doped DLC film or a Si-DLC film). In the Si-doped DLC film, Si doping causes Si atoms to replace C atoms in sp2 hybridization, increasing the number of sp3 hybridizations, thus increasing the sp3 / sp2 ratio on the DLC film surface and improving the surface hardness of the DLC film. Furthermore, during aqueous polishing, the Si-doped DLC film easily forms a lubricating layer containing silicon oxide on its surface. During the polishing and grinding process of the planetary wheel 100, this reduces the coefficient of friction on the film surface and improves the wear resistance of the planetary wheel 100.

[0048] The bonding layer 121 is a Si-doped coating. The bonding layer 121 can be a Si-DLC film layer like the functional layer 122, or it can be a coating layer with other Si doping, or it can be a coating layer that is partly Si-DLC film and partly with other Si doping. Si doping can reduce the instability of the thin film, reduce the internal stress of the thin film, and can replace the traditional metal bonding layer, thus avoiding heavy metal contamination caused by the metal bonding layer during wafer polishing.

[0049] The outermost functional layer 122 is the main part of the coating 12. It directly contacts and polishes the wafer. The small amount of Si doping in the functional layer 122 ensures that it has a high density, reduces the internal stress of the functional layer 122, and keeps the functional layer 122 stable as a whole. The connecting layer 121 needs to be in direct contact with the substrate 11. The high Si doping in the connecting layer 121 can improve the bonding ability between the connecting layer 121 and the substrate 11, thereby improving the bonding ability between the coating 12 and the substrate 11.

[0050] The Si doping level in the connecting layer 121 is reduced from the maximum to the minimum doping level. The maximum Si doping level in the connecting layer 121 ranges from 40 mol% to 60 mol%. The maximum doping level, representing a higher Si content, significantly improves the adhesion between the coating 12 and the substrate 11. This avoids excessive performance differences between the coating 12 and the substrate 11 due to significant differences in Si content, which could lead to poor adhesion and easy peeling or detachment. A Si content of 40% or higher ensures good adhesion between the coating 12 and the substrate 11, while a Si content of 60% or lower ensures that the Si content variation in the connecting layer 121, or rather the coating 12, is not too large, thus guaranteeing the overall stability of the connecting layer 121 or the coating 12. In the connecting layer 121, the Si doping amount can decrease at a uniform rate or at multiple different rates. The connecting layer 121 can also include some layer structures with constant Si doping amounts, as long as the Si doping amount in the connecting layer 121 shows a decreasing trend overall.

[0051] Maintaining the Si doping level in the functional layer 122 at a preset doping level, within the range of 1 mol% to 4 mol%, improves overall stability. This ensures high density on the surface of the coating 12 while also imparting excellent stability and increasing surface hardness. The ratio of the thickness of the functional layer 122 to the thickness of the coating 12 is controlled within the range of 0.6 to 0.8. In the planetary gear 100, the thickness of the coating 12 is essentially fixed. While increasing the thickness of the functional layer 122 can extend the lifespan of the coating 12, and increasing the thickness of the connecting layer 121 can better improve the adhesion between the coating 12 and the substrate 11, unrestricted increases in the thickness of either the connecting layer 121 or the functional layer 122 will result in a thinner connecting layer 121, which is detrimental to the overall performance of the coating 12.

[0052] The thickness of the functional layer 122 is within the aforementioned range, ensuring sufficient thickness to extend the service life of the coating 12. Simultaneously, it ensures sufficient thickness of the connecting layer 121, guaranteeing excellent adhesion between the coating 12 and the substrate 11, preventing detachment and peeling. By controlling the thickness of the functional layer 122 to 60% to 80% of the coating 12 thickness, the overall performance of the coating 12 is balanced, considering its adhesion, wear resistance, and service life, thus improving the overall performance of the planetary gear 100 while maintaining wear resistance and stability. For example, in a planetary gear with a total surface coating thickness of 2.5 μm, the thickness of the functional layer 122 is approximately 1.6 μm.

[0053] like Figure 3 As shown, in one optional embodiment, the connecting layer 121 includes a bonding layer 1211 and a transition layer 1212. One side of the bonding layer 1211 is bonded to the corresponding surface of the substrate 11 on the coating 12, and one side of the transition layer 1212 is bonded to the functional layer 122. By providing the bonding layer 1211 and the transition layer 1212 in the connecting layer 121, the Si doping amount in the connecting layer 121 can be gradually reduced in a more suitable manner, resulting in good bonding performance between the connecting layer 121 and the substrate 11 layer, as well as good bonding performance with the functional layer 122.

[0054] As an optional implementation, the ratio of the thickness of the bonding layer 1211 to the thickness of the transition layer 1212 ranges from 0.8 to 1.2. When the thickness ratio of the bonding layer 1211 to the transition layer 1212 is within this range, it ensures both the thickness of the bonding layer 1211, improving the bonding performance between the connecting layer 121 and the substrate 11, and the thickness of the transition layer 1212, improving the bonding performance between the connecting layer 121 and the functional layer 122.

[0055] like Figure 4As shown, in one optional implementation, the bonding layer 1211 is a Si-doped DLC layer, comprising a first sublayer 1211a and a first stabilizing layer 1211b. The Si doping amount in the first sublayer 1211a decreases from a maximum doping amount to an intermediate doping amount, while the Si doping amount in the first stabilizing layer 1211b is the same as the intermediate doping amount. The bonding layer 1211 includes a first sublayer 1211a with continuously decreasing Si doping and a first stabilizing layer 1211b with relatively stable Si doping. In the first sublayer 1211a, the Si doping amount continuously decreases, and the Si doping amount decreases from the maximum doping amount to the intermediate doping amount at a relatively large rate. This satisfies the bonding performance requirements between the bonding layer 1211 and the substrate 11, and also prepares for the subsequent deposition of a functional layer 122 with a lower Si content. In the first stabilizing layer 1211b, the Si doping amount remains constant at an intermediate doping amount. Maintaining a stable Si doping amount increases the bonding ability between the bonding layer 1211 and the transition layer 1212. In the first sublayer 1211a, the side closest to the substrate 11 has a higher Si doping level, which enables the coating 12 to have better adhesion to the substrate 11 and ensures high bonding performance between the coating 12 and the substrate 11. In the first sublayer 1211a, rapidly reducing the Si doping level allows for a reduction in the thickness of the bonding layer 1211 and the connecting layer 121, thereby relatively increasing the thickness of the functional layer 122 while maintaining the total thickness of the coating 12. Maintaining a relatively constant Si doping level in the first stabilizing layer 1211b allows for increased adhesion between the bonding layer 1211 and the subsequent transition layer 1212, ensuring high bonding performance between the bonding layer 1211 and the transition layer 1212.

[0056] As an optional implementation, the ratio of the thickness of the first sublayer 1211a to the thickness of the first stabilizing layer 1211b ranges from 4 to 6. A thickness ratio of the first sublayer 1211a to the first stabilizing layer 1211b within this range ensures a significant reduction in the Si doping amount in the first sublayer 1211a while maintaining a certain thickness in the first stabilizing layer 1211b, thus improving the bonding performance between the first stabilizing layer 1211b and the subsequent transition layer 1212.

[0057] As an optional implementation, the intermediate doping amount ranges from 5 mol% to 8.5 mol%. The intermediate doping amount is a doping amount with a relatively small Si content. A Si content of 5% or more can ensure that the rate of Si content reduction is not too large, which can improve the overall stability of the formation. On the other hand, a Si content of 8.5% or less can ensure that the Si content in the interconnect layer 121 can be reduced rapidly within a small thickness range, avoiding the encroachment of the thickness of the functional layer 122 due to the excessive thickness of the interconnect layer 121.

[0058] like Figure 4 As shown, in one optional implementation, the transition layer 1212 is a Si-doped DLC layer. The transition layer 1212 includes a second sub-layer 1212a and a second stable layer 1212b. The Si doping amount in the second sub-layer 1212a decreases from an intermediate doping amount to a minimum doping amount, while the Si doping amount in the second stable layer 1212b is the same as the minimum doping amount. The transition layer 1212 includes a second sub-layer 1212a with continuously decreasing Si doping amount and a second stable layer 1212b with relatively stable Si doping amount. In the second sub-layer 1212a, the Si doping amount continuously decreases, and the Si doping amount decreases from an intermediate doping amount to a minimum doping amount at a relatively large rate. This satisfies the bonding performance requirements between the bonding layer 1211 and the substrate 11, and also prepares for the subsequent deposition of a functional layer 122 with a lower Si content. In the second sub-layer 1212a, the side closer to the bonding layer 1211 has a higher Si doping amount, which enables the transition layer 1212 and the connecting layer 121 to have better bonding ability. In the second sublayer 1212a, rapidly reducing the Si doping amount allows for a reduction in the thickness of the transition layer 1212 and the connecting layer 121, thereby relatively increasing the thickness of the functional layer 122 while maintaining the total thickness of the coating 12. In the second stabilizing layer 1212b, the Si doping amount is kept constant at the minimum doping level. Maintaining a stable Si doping amount increases the bonding ability between the transition layer 1212 and the functional layer 122. Keeping the Si doping amount relatively constant in the second stabilizing layer 1212b increases the bonding ability between the bonding layer 1211 and the subsequent transition layer 1212, ensuring high bonding performance between the bonding layer 1211 and the transition layer 1212.

[0059] As an optional implementation, the ratio of the thickness of the second sublayer 1212a to the thickness of the second stabilizing layer 1212b ranges from 1.5 to 2.5. This ratio ensures a significant reduction in Si doping in the second sublayer 1212a while maintaining a sufficient thickness in the second stabilizing layer 1212b, thus improving the bonding performance between the second stabilizing layer 1212b and the subsequent functional layer 122.

[0060] As an optional implementation, the minimum doping amount ranges from 2 mol% to 5 mol%. In the connecting layer 121, the portion with the minimum doping amount is in contact with the functional layer 122. Controlling the minimum doping amount to be close to the preset doping amount in the functional layer 122 can improve the bonding performance between the connecting layer 121 and the functional layer 122, thereby improving the overall performance of the coating 12. The minimum doping amount is less than the intermediate doping amount, but the difference between the minimum doping amount and the intermediate doping amount is small, so that the difference in Si doping amount between the entire second sublayer 1212a and the first stable layer 1211b is not large, which can improve the stability of the entire second sublayer 1212a and the first stable layer 1211b. At the same time, the sublayer structure composed of the second sublayer 1212a and the second stable layer 1212b can play a transition role between the sublayer structure composed of the first sublayer 1211a and the first stable layer 1211b and the functional layer 122, which can better bond the connecting layer 121 and the functional layer 122 together, thereby improving the bonding performance between the connecting layer 121 and the functional layer 122. Preferably, the preset doping amount of functional layer 122 is the same as the minimum doping amount.

[0061] It should be noted that the bonding strength between the connecting layer 121 and the substrate surface is positively correlated with the Si doping amount between them. The bonding strength can be guaranteed by setting the maximum doping amount on the side of the connecting layer 121 that bonds to the substrate surface to be between 40 mol% and 60 mol%. Therefore, the connecting layer only needs to meet the high Si doping amount requirement. It can be the DLC layer mentioned above, or other structures that are not DLC layers. The above embodiment is only used as an example of a Si-doped DLC layer for the connecting layer and is not a limitation on the connecting layer.

[0062] Another aspect of this application provides a method for manufacturing a planetary wheel 100, which is used to manufacture the aforementioned planetary wheel 100, and the manufacturing method specifically includes the following steps:

[0063] A bonding layer 121 is formed by depositing a layer on the surface of a substrate to reduce the Si doping amount from the maximum doping amount to the minimum doping amount.

[0064] A functional layer 122 is deposited on the bonding layer 121 to keep the Si doping amount at a preset doping amount, thereby obtaining the functional layer 122. The preset doping amount is less than or equal to the minimum doping amount.

[0065] In this application, the coating 12 on the surface of the planetary wheel 100 can be prepared by chemical vapor deposition or physical vapor deposition, or by vacuum evaporation, magnetron sputtering and ion beam sputtering, as long as the corresponding coating structure can be obtained.

[0066] As an optional implementation, the preparation of the bonding layer 121 includes first depositing a film on the surface of a substrate with the maximum doping amount as the initial doping amount, then gradually reducing the doping amount to an intermediate doping amount for a period of time, and then continuing to reduce the doping amount to the minimum doping amount, maintaining the minimum doping amount for a period of time to obtain the bonding layer 121.

[0067] As an optional implementation, the manufacturing method is plasma-enhanced chemical vapor deposition (PECVD). The raw material gases used in PECVD for film preparation include silicon and carbon sources. During the preparation process, the Si doping level in each layer is controlled by adjusting the ratio of silicon and carbon sources. Specifically, the Si doping level in the connecting layer 121 is reduced from the maximum doping level to the intermediate doping level by reducing the silicon source flux and increasing the carbon source flux; the Si doping level in the connecting layer 121 is reduced from the intermediate doping level to the minimum doping level by maintaining the carbon source constant and reducing the silicon source flux; the Si doping level in the functional layer 122 is converged to the preset doping level by maintaining the silicon source constant and increasing the carbon source flux. In this application, chemical vapor deposition is used for preparation. Chemical vapor deposition allows for precise and continuous adjustment of the Si doping level by controlling the silicon source content in the gas source. During the film deposition process 12, the Si doping level is reduced by continuously decreasing the silicon source content.

[0068] As an optional implementation, the carbon source can be a common or frequently used carbon-containing gaseous feedstock for vapor deposition, such as various hydrocarbon gases; the silicon source can be a common or frequently used silicon-containing gaseous feedstock for vapor deposition, such as various silanes or siloxanes. Preferably, in this application, the carbon source is acetylene, and the silicon source is preferably at least one of hexamethylsiloxane or disiloxane.

[0069] It should be noted that during the fabrication of functional layer 122, on the one hand, there is a difference between the layer structure bonded to functional layer 122 and the Si doping amount of functional layer 122. Therefore, a layer structure with gradually decreasing Si doping will also appear in the part of functional layer 122 near the previous layer structure. However, since the difference in Si doping amount between functional layer 122 and the previous layer structure is usually small, the layer structure with gradually decreasing Si doping amount in functional layer 122 is also relatively thin, and in some sense, this layer structure can be ignored. On the other hand, it is necessary to gradually reduce the amount of carbon source introduced until the coating is completed. This processing stage is the final stage of the coating process, and gradually increasing the amount of carbon source introduced serves to protect the manufacturing equipment. Therefore, functional layer 122 will also include a finishing layer structure in which the Si doping amount is gradually reduced to 0. Since this finishing layer structure is relatively thin overall, can be removed in subsequent processing, and is easily worn during use, in some sense, this finishing layer structure can also be ignored.

[0070] In this application, the surface hardness of the planetary gear 100 is increased by forming a Si-doped DLC coating 12 on the surface of the planetary gear 100. Furthermore, by using a two-layer structure with different Si contents in each layer, this application achieves both increased wear resistance of the planetary gear 100 surface and satisfactory adhesion between the coating 12 and the planetary gear 100 substrate 11. In this application, the Si-doped DLC coating 12 replaces the traditional metal bonding layer, avoiding the problem of heavy metal contamination during wafer polishing.

[0071] The present application will be further described below with reference to embodiments and comparative examples, but the scope of protection of the present application is not limited to the embodiments. In the following embodiments and comparative examples, the PECVD method is used to prepare the corresponding coating 12 on the planetary gear substrate with acetylene as the carbon source and hexamethylsiloxane as the silicon source. The Si doping amount in the coating 12 is controlled by the amount of hexamethylsiloxane and acetylene introduced into the process gas, and the thickness of each layer in the coating 12 is controlled by controlling the coating processing time of each stage. According to the description in the foregoing part of the present application, those skilled in the art can control the corresponding Si doping amount and the thickness of each part in the coating 12 during the coating process. In addition, the thickness of the planetary gear 100 and the coating 12 needs to be determined according to the specific crystal material (material and thickness) processed by the planetary gear 100. In this application, only a planetary gear 100 of a specific thickness and the corresponding coating 12 are given as an illustration based on a certain wafer processing process, which does not constitute a limitation on the thickness of the planetary gear 100 and the coating 12 in this application.

[0072] The Si doping amount and thickness of each layer in Examples 1 to 13 are shown in Tables 1 and 2 below, where the Si doping amount of each layer in Examples 1 to 9 varies as follows: Figure 5 As shown, the Si doping amount changes in each layer in Examples 10 and 11 are as follows: Figure 6 As shown, the Si doping amount changes in each layer in Examples 12 and 13 are as follows: Figure 7 As shown.

[0073] Table 1. Si doping concentration and thickness of each layer in Examples 1 to 9

[0074]

[0075]

[0076] Table 2 shows the Si doping amount and thickness of each layer in Examples 10 to 13.

[0077]

[0078] Comparative Example 1

[0079] In Comparative Example 1, all parameters are the same as in Example 1 except for the following parameters.

[0080] The total thickness of the coating is 2.4 μm, the thickness of the functional layer is 1.4 μm, the thickness of the first sublayer is 0.42 μm, the thickness of the first stabilizing layer is 0.08 μm, the thickness of the second sublayer is 0.34 μm, and the thickness of the second stabilizing layer is 0.16 μm.

[0081] Comparative Example 2

[0082] In Comparative Example 2, all parameters are the same as in Example 1 except for the following parameters.

[0083] The total thickness of the coating is 2.5 μm, the thickness of the functional layer is 2.1 μm, the thickness of the first sublayer is 0.2 μm, the thickness of the first stabilizing layer is 0.05 μm, the thickness of the second sublayer is 0.17 μm, and the thickness of the second stabilizing layer is 0.7 μm.

[0084] Comparative Example 3

[0085] In Comparative Example 3, the coating is a single-layer structure with a total thickness of 2.5 μm. The Si doping concentration in the coating is uniform and 2 mol%. The variation of Si doping concentration in Comparative Example 3 is as follows: Figure 8 As shown.

[0086] Comparative Example 4

[0087] In Comparative Example 4, the coating is a single-layer structure with a total thickness of 2.5 μm. The Si doping content in the coating is uniformly reduced from 50 mol% to 2 mol%. The variation of Si doping content in each layer of Comparative Example 4 is shown below. Figure 9 As shown.

[0088] Comparative Example 5

[0089] In Comparative Example 5, the coating has a two-layer structure with a total thickness of 2.5 μm. The Si doping concentration in the bonding layer is uniformly reduced from 50 mol% to 2 mol%, and the bonding layer thickness is 1.5 μm. The Si doping concentration in the functional layer is maintained at 2 mol%, and the functional layer thickness is 1.0 μm. The Si doping concentration variations in each layer of Comparative Example 5 are shown below. Figure 10 As shown.

[0090] Performance Tests and Results

[0091] Performance testing

[0092] 1. Surface hardness test:

[0093] The HM2000S nanoindenter was used for testing. The maximum load was set to 10mN, the loading time was set to 20s, and the number of tests was 30. The hardness data was taken as the average value.

[0094] 2. Abrasion resistance test:

[0095] An Anton Paar tribometer was used with a load of 20 N in deionized water. Φ6mm Si3N4 balls were used, with a wear track length of 5mm. The frequency was 6Hz (6 times per minute), and the rotation speed was 86400 rpm (1 hour) / 43200 rpm (30 minutes) for 4 hours of reciprocating friction. The wear track depth was measured using a KLA D300 high-precision profilometer.

[0096] 3. Combined with performance testing:

[0097] The scratch test was conducted using an MFT-4000 multi-functional material surface performance tester. The parameters were set as follows: loading speed of 100 N / min, termination load of 100 N, and scratch length of 5 mm, all of which remained constant. The test was repeated three times, and the average value of the three bonding force readings was taken.

[0098] Test Results

[0099] The performance test results are shown in Table 3 below.

[0100] Table 3. Performance test results of the examples and comparative examples.

[0101]

[0102]

[0103] As can be seen from Table 3 above, compared with the planetary gears obtained in the comparative examples, the planetary gears obtained in Examples 1 to 13 have superior comprehensive performance in terms of surface hardness, wear resistance and bonding performance.

[0104] Finally, it should be noted that the above are only some preferred embodiments of this application and are not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A planetary wheel (100), characterized in that, include: Substrate (11), the substrate (11) comprising two opposing substrate surfaces; as well as A coating (12) is disposed on at least one of the substrate surfaces. The coating (12) is a Si-doped coating. The Si doping amount of the coating (12) decreases in the thickness direction away from the substrate surface. The coating (12) includes a connecting layer (121) and a functional layer (122). The connecting layer (121) is disposed between the functional layer (122) and the surface of the substrate. The maximum doping amount of Si in the connecting layer (121) ranges from 40 mol% to 60 mol%. The functional layer (122) is a Si-doped DLC layer. The doping amount of Si in the functional layer (122) is a preset doping amount, which ranges from 1 mol% to 4 mol%. The ratio of the thickness of the functional layer (122) to the total thickness of the coating (12) ranges from 0.6 to 0.

8. The connecting layer (121) includes a bonding layer (1211) and a transition layer (1212). The bonding layer (1211) is a Si-doped DLC layer. The bonding layer (1211) includes a first sublayer (1211a) and a first stabilizing layer (1211b). The ratio of the thickness of the first sublayer (1211a) to the thickness of the first stabilizing layer (1211b) ranges from 4 to 6. The Si doping amount in the first sublayer (1211a) is reduced from the maximum doping amount to an intermediate doping amount. The Si doping amount in the first stabilizing layer (1211b) is the same as the intermediate doping amount. The intermediate doping amount ranges from 5 mol% to 8.5 mol%.

2. The planetary wheel (100) according to claim 1, characterized in that: The ratio of the thickness of the bonding layer (1211) to the thickness of the transition layer (1212) is in the range of 0.8 to 1.2; one side of the bonding layer (1211) is bonded to the corresponding substrate surface on the coating (12), and one side of the transition layer (1212) is bonded to the functional layer (122).

3. The planetary wheel (100) according to claim 1, characterized in that: The transition layer (1212) is a Si-doped DLC layer. The transition layer (1212) includes a second sub-layer (1212a) and a second stable layer (1212b). The ratio of the thickness of the second sub-layer (1212a) to the thickness of the second stable layer (1212b) ranges from 1.5 to 2.

5. The Si doping amount in the second sub-layer (1212a) is reduced from an intermediate doping amount to a minimum doping amount. The Si doping amount in the second stable layer (1212b) is the same as the minimum doping amount. The minimum doping amount ranges from 2 mol% to 5 mol%.

4. A method for manufacturing the planetary wheel (100) as described in claim 3, characterized in that, The manufacturing method includes the following steps: A bonding layer (121) is deposited on the surface of the substrate to reduce the Si doping amount from the maximum doping amount to the minimum doping amount, thereby obtaining the bonding layer (121). A functional layer (122) is deposited on the connecting layer (121) to maintain the Si doping amount at the preset doping amount, thereby obtaining the functional layer (122); the preset doping amount is less than or equal to the minimum doping amount.

5. The manufacturing method according to claim 4, characterized in that: The preparation of the plated connecting layer (121) includes, The coating process begins on the substrate surface with the maximum doping amount as the initial doping amount. Gradually reduce the doping level to an intermediate doping level and maintain the intermediate doping level for a period of time; Continue to reduce the doping amount to the minimum doping amount, and maintain the minimum doping amount for a period of time to form the bonding layer (121).

6. The manufacturing method according to claim 4, characterized in that: The manufacturing method is plasma-enhanced chemical vapor deposition. The raw material gases used in preparing the coating (12) by plasma-enhanced chemical vapor deposition include silicon source and carbon source. The Si doping amount of the connecting layer (121) is reduced from the maximum doping amount to the intermediate doping amount by reducing the silicon source and increasing the carbon source flux; the Si doping amount of the connecting layer (121) is reduced from the intermediate doping amount to the minimum doping amount by keeping the carbon source unchanged and reducing the silicon source flux. The Si doping amount of the functional layer (122) converges to the preset doping amount by maintaining the silicon source unchanged and increasing the flux of the carbon source.

7. The manufacturing method according to claim 6, characterized in that: The silicon source includes at least one of siloxanes or alkylsiloxanes, and the carbon source includes at least one of hydrocarbons.

8. The manufacturing method according to claim 7, characterized in that: The silicon source includes at least one of hexamethyldisiloxane or disiloxane, and the carbon source includes acetylene.

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