In-situ reflectometry for real-time processing control

By using self-light sources and spectrometer technologies in the process chamber, the film thickness on the substrate surface is monitored in real time, and the problem of difficulty in real-time and accurate monitoring of film thickness in the process chamber in the prior art is solved, and efficient and accurate film thickness monitoring is achieved.

CN120113043APending Publication Date: 2025-06-06APPLIED MATERIALS INC
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Patent Information

Application Number
CN202380075252.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-04-28
Filing Date
2023-10-18
Publication Date
2025-06-06

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Abstract

In one implementation, a method of monitoring film thickness on a substrate includes: generating light from a light source; collimating the light from the light source to form a collimated light beam; reflecting the collimated light beam from a surface to be measured to generate a reflected light beam; splitting the reflected light beam through a dichroic mirror, wherein the reflected light beam is split into a first light beam and a second light beam; receiving the first light beam from the dichroic mirror by a pyrometer; receiving the second light beam from the dichroic mirror by a spectrograph; and analyzing data derived from the pyrometer and the spectrometer to determine one or more characteristics of the surface to be measured.
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Citation Information

Patent Citations

  • In-situ metrology method for thickness measurement during PECVD processes

    US10281261B2