背接触电池以及光伏组件

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By setting a doped layer with an embedded diode structure on the side of the semiconductor substrate of the back contact battery, the hot spot problem of the back contact battery is solved, the temperature risk is reduced, and the yield and efficiency are improved.

CN120152392BActive Publication Date: 2026-07-17HESHAN LONGI PHOTOVOLTAIC TECH CO LTD

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Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: HESHAN LONGI PHOTOVOLTAIC TECH CO LTD
Filing Date: 2025-02-25
Publication Date: 2026-07-17

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Abstract

本发明涉及太阳能光伏技术领域，特别涉及一种背接触电池以及光伏组件。背接触电池中，半导体基底具有第一表面和第一表面至少一侧的第一侧面，第一表面包括第一掺杂区和第二掺杂区，且第一掺杂区与第二掺杂区之间具有间隔区；第一掺杂层设置于第一掺杂区上；第二掺杂层设置于第二掺杂区上，且第一掺杂层和 / 或第二掺杂层还设置于第一侧面上，其中，第一掺杂层和第二掺杂层在第一侧面电性连接，第一掺杂层和第二掺杂层的导电类型相反。也就是说，本申请中第一掺杂层和第二掺杂层在侧面电性连接形成互联通道，实现第一掺杂层和第二掺杂层之间的电传输，以改善热斑问题。

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