Chip physical self-destruction packaging structure based on energetic film and control method

Abstract

The application discloses a kind of chip physical self-destruction encapsulation structure and control method based on energetic film, and encapsulation structure includes package shell, self-destruction execution module, control switch module, static electricity dredging module and system circuit;Package shell includes package shell base and package top cover;First energetic film is deposited in package top cover;Control switch module includes insulating layer, flow guide layer, control layer and substrate;Flow guide layer includes metal pad and rectangular micro-bridge type heating layer;Control layer includes pad metal, double V-shaped micro-bridge type heating circuit and second energetic film;Method is, when being intruded, control switch module generates pulse current to make micro-bridge type heating circuit burst rectangular micro-bridge type heating layer, so that self-destruction execution module removes circuit isolation;System circuit makes first energetic film alloying reaction, and high pressure is formed in the closed cavity formed in package shell base and package top cover, and target chip is crushed.This application realizes chip physical crushing self-destruction, and self-destruction process is accurate and controllable.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit security technology and chip security protection, and in particular to a chip physical self-destruction packaging structure and control method based on an energetic thin film. Background Technology

[0002] Chip self-destruction is the last line of defense for information security. With the development of information technology, information security has received increasing attention. To improve the security of core information and prevent its leakage, many organizations have raised the security requirements for the use of core chips.

[0003] Existing chip security technologies are mainly divided into two categories: logic protection and physical self-destruction. Logic-based chip security methods primarily include information encryption and built-in anti-leakage programs. However, with the development of advanced technologies such as cryptography, reverse engineering (e.g., FIB patching), and interlayer stripping, the limitations of logic protection have become increasingly apparent: it cannot prevent the extraction of physical layer information and carries the risk of key leakage. Against this backdrop, physical self-destruction technology, due to its irreversible damage to the chip structure, has become a key technological direction for high-security scenarios.

[0004] Physical self-destruct technology is a novel chip security protection technology that has emerged in recent years. Its core idea is to trigger a self-destruct mechanism when a chip is illegally accessed or lost, causing the internal circuitry or memory cells to fail, thereby protecting sensitive information. Self-destruct technologies can include chemical corrosion self-destruction and electrochemical self-destruction, depending on the triggering mechanism and the principle of destruction. Chemical corrosion self-destruction uses a chemical reaction to corrode and dissolve the chip material, thus achieving self-destruction. Its advantage is that the self-destruction process is relatively mild, but the chemical reaction is usually slow, making it difficult to meet the need for rapid self-destruction. Electrochemical self-destruction utilizes an electrochemical reaction to generate high voltage or high current, damaging the transistor gates inside the chip. Its characteristic is rapid response, but its destructive power is limited, making it difficult to achieve complete physical destruction.

[0005] With the continuous development of microelectromechanical systems (MEMS) technology, transducers and energetic charges are moving towards miniaturization and integration. This technological advancement provides new possibilities for chip self-destruction technology. In energetic micro self-destruct devices, microstructure transducers and micro-charges are the main functional components. The microstructure transducer can efficiently convert input electrical energy into heat energy, while the micro-charge generates a detonation wave upon detonation of the transducer, causing irreversible damage to the chip.

[0006] In summary, how to provide a highly reliable, non-invasive chip self-destruct packaging structure and control method to achieve physical pulverization of the chip, and integrate electrostatic discharge and control switches to ensure precise and controllable self-destruction process, is a technical problem that urgently needs to be solved. Summary of the Invention

[0007] Purpose of the invention: To address the problems existing in the prior art, this invention proposes a chip physical self-destruction packaging structure based on an energetic thin film, aiming to provide a highly reliable, non-invasive chip self-destruction packaging structure; this invention also proposes a chip physical self-destruction method based on an energetic thin film, which achieves physical pulverization self-destruction of the chip through the aluminothermic reaction in the self-destruction packaging structure, and integrates electrostatic discharge and control switches to ensure that sensitive information is irrecoverable in the event of illegal intrusion or loss, and the self-destruction process is precise and controllable.

[0008] Technical solution: The present invention is based on a chip physical self-destruction packaging structure containing an energetic thin film, comprising a packaging shell, a self-destruction execution module, a control switch module, an electrostatic discharge module, and a system circuit;

[0009] The current-guiding layer of the control switch module, the self-destruct execution module, and the static electricity discharge module are connected in parallel and then connected to the system circuit;

[0010] The package housing includes a package housing base and a package top cover; a first energetic thin film is deposited on the inner surface of the package top cover;

[0011] The self-destruct execution module includes an execution layer and a substrate arranged from top to bottom; the self-destruct execution module is bonded to the top cover of the package; the execution layer includes metal pads and an actuator; the actuator is a double V-shaped microbridge heating circuit made of Ni-Cr energetic thin film by magnetron sputtering;

[0012] The control switch module includes an insulating layer, a current-conducting layer, a control layer, and a substrate arranged from top to bottom; the current-conducting layer includes metal pads and a rectangular microbridge heating layer; the control layer includes pad metal, a double V-shaped microbridge heating circuit, and a second energetic thin film; the second energetic thin film is stacked with the double V-shaped microbridge heating circuit.

[0013] The first and second energetic films are multilayer energetic films formed by alternating deposition of nanoscale aluminum and nickel layers by magnetron sputtering.

[0014] The electrostatic discharge module includes an insulating layer, an electrostatic discharge layer, and a substrate arranged from top to bottom; the electrostatic discharge layer consists of staggered comb-shaped electrode plates.

[0015] The multilayer energetic thin film is a periodic unit structure formed by alternating stacking of aluminum and nickel layers. The periodic unit structure includes a single aluminum thin film and a single nickel thin film.

[0016] The thickness of the single-layer aluminum film and the single-layer nickel film is 10nm to 100nm.

[0017] The aluminum and nickel films are covered with a Parylene-C passivation layer, and the total thickness of the aluminum and nickel films is 50–200 μm.

[0018] The included angle of the double V-shaped microbridge heating circuit is between 45° and 145°, and the thickness is 0.1–1 μm.

[0019] The insulating layer is made of silicon dioxide and has a thickness of 0.1–1 μm.

[0020] The rectangular microbridge heating layer has a thickness of 0.1–1 μm, a length of 10–100 μm, and a width of 10–100 μm.

[0021] The comb-shaped electrode plates are rectangular with a thickness of 0.1–1 μm and a length of 10–100 μm, and the gaps between the staggered arrangement of the comb-shaped electrode plates are 0.1–1 μm.

[0022] This invention relates to a chip physical self-destruction control method based on an energetic thin film, implemented by a chip physical self-destruction packaging structure based on an energetic thin film. The self-destruction control method includes the following steps:

[0023] Step (1): When the target chip is in normal working condition, the self-destruct execution module is connected to the system circuit; the current-conducting layer of the control switch module is connected in parallel with the self-destruct execution module to short-circuit the self-destruct execution module; the electrostatic discharge module is connected in parallel with the self-destruct execution module, and the electrostatic discharge module discharges electrostatic charge in real time.

[0024] Step (2): When the system circuit detects an intrusion signal, the pulse current generated by the capacitor discharge of the control layer of the control switch module passes through the Joule heat generated by the microbridge heating circuit of the control layer, causing the bridge material of the microbridge heating circuit to melt, vaporize and generate plasma, resulting in an electrical explosion. The released energy activates the second energetic film of the control layer to undergo an aluminothermic reaction and burn, breaking the rectangular microbridge heating layer of the upper current guiding layer, thus releasing the circuit isolation of the self-destruct execution module. The system circuit controls the double V-shaped microbridge heating circuit of the self-destruct execution module to be energized and heated to the ignition threshold of the first energetic film of the package top cover. The first energetic film undergoes an alloying reaction, releasing heat, high-temperature gas and shock wave, forming a local high pressure in the sealed cavity formed by the package base and the package top cover, shattering the physical structure of the target chip.

[0025] In step (2), the first energetic thin film undergoes an alloying reaction, releasing heat, high-temperature gas, and shock waves. This creates a local high pressure of ≥2MPa within the sealed cavity formed by the package housing base and the package top cover, shattering the physical structure of the target chip.

[0026] Beneficial effects: Compared with the prior art, the present invention has the following advantages:

[0027] (1) This invention addresses the problems of time-consuming and incomplete destruction in traditional self-destruction methods by employing a self-destruction method based on the high-efficiency energy release of the aluminothermic reaction. Through a designed energetic thin-film structure (using an Al / Ni energetic thin film as the energy amplification element and a Ni-Cr bridge as the igniter for the self-destruction actuator, with an optimized energetic thin-film modulation ratio of 3:2), an energy density ≥8 kJ / cm³ is achieved. 3 It has a self-destruct time of less than 1 second, and its thoroughness of destruction is superior to the shortcomings of traditional chemical corrosion methods that require minutes.

[0028] (2) In view of the problem of risk control of false triggering, the present invention constructs a physical insurance circuit breaking mechanism, designs a parallel physical insurance structure of the flow guide layer and forms a short circuit protection loop with the self-destruct module, so as to short-circuit the self-destruct execution module and prevent the self-destruct execution module from being falsely triggered.

[0029] (3) In view of the problem that static electricity accumulation can damage the chip, the present invention proposes a static electricity conduction design. By integrating a static electricity conduction layer in the packaging structure, static charge can be effectively guided and dispersed to prevent static electricity accumulation from damaging the chip. At the same time, during the self-destruction process, the static electricity conduction layer can also quickly release static charge to the ground to avoid the influence of static electricity on the self-destruction process. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of an embodiment of the chip physical self-destruction packaging structure based on an energetic thin film of the present invention, showing the chip in a safe state;

[0031] Figure 2 This is a schematic diagram of a self-destruct mechanism in one embodiment of the chip physical self-destruct packaging structure based on an energetic thin film according to the present invention.

[0032] Figure 3 This is a schematic diagram of a control switch module, representing an embodiment of the chip physical self-destruction packaging structure based on an energetic thin film according to the present invention.

[0033] Figure 4 This is a schematic diagram of an embodiment of the chip physical self-destruction packaging structure based on an energetic thin film of the present invention, specifically an electrostatic discharge module.

[0034] Figure 5 This is a schematic diagram of an embodiment of the chip physical self-destruct packaging structure based on an energetic thin film of the present invention, when the chip executes a self-destruct instruction. Detailed Implementation

[0035] Figures 1 to 5In the middle: 1-Packaging housing base; 2-Packaging top cover; 3-System circuit; 4-Target chip; 5-First energetic thin film; 6-Internal interconnect pin; 7-Electrostatic discharge module; 8-Control switch module; 9-Self-destruct execution module; 10-Substrate; 11-Metal pad; 12-Double V-shaped microbridge heating circuit; 13-First insulating layer; 14-Conduction layer; 15-Second energetic thin film; 16-Control layer; 17-Substrate; 18-Second insulating layer; 19-Electrostatic discharge layer; 20-Substrate.

[0036] One object of the present invention is to provide a chip physical self-destruct packaging structure based on an energetic thin film, such as... Figures 1 to 5 As shown, the chip physical self-destruct packaging structure based on an energetic thin film of the present invention includes a packaging shell, a self-destruct execution module 9, a control switch module 8, an electrostatic discharge module 7, and a system circuit 3.

[0037] The package housing consists of two parts: a package housing base 1 and a package top cover 2. The package housing base 1 is made of ceramic such as Al2O3 or a metal substrate such as Cu-W alloy. The package housing base 1 has four sets of internal interconnection pins 6, which are used for signal transmission between the system circuit 3 and the self-destruct execution module 9, the system circuit and the control switch module 8, the system circuit and the control switch module, and the system circuit and the electrostatic discharge module.

[0038] The self-destruct execution module 9, control switch module 8, and static electricity discharge module 7 are integrated into the package housing base 1 made of ceramic or metal substrate, and are electrically connected through internal interconnection pins.

[0039] The current-guiding layer of the control switch module 8, the self-destruct execution module 9, and the static electricity conduction module 7 are connected in parallel and then connected to the system circuit 3. The current-guiding layer of the control switch module 8 is connected in series with the system circuit 3.

[0040] The top cover 2 is made of ceramic or metal substrate. The inner surface of the top cover 2 is deposited with a first energetic thin film 5. That is, the inner surface of the top cover 2 is formed by alternating deposition of nanoscale aluminum Al layer and nickel Ni layer through magnetron sputtering process to form a multilayer energetic thin film.

[0041] This multilayer energetic thin film is a periodic unit structure formed by alternating stacks of aluminum (Al) and nickel (Ni) layers. Each periodic unit structure contains a single aluminum (Al) thin film and a single nickel (Ni) thin film. The thickness of the single aluminum (Al) thin film and the single nickel (Ni) thin film is between 10 nm and 100 nm, with a thickness ratio of 3:2. The interlayer interface is optimized for bonding strength through annealing. The surfaces of the aluminum and nickel films are covered with a Parylene-C passivation layer to prevent oxidation. The total thickness of the film is 50–200 μm, and the shape is rectangular. The first energetic thin film 5 is located directly above the target chip 4 and the self-destruct execution module 9 in the system circuit. The first energetic thin film 5 is deposited on the inner surface of the package top cover 2. When the top cover 2 and the substrate are packaged, the spatial projection of the first energetic thin film 5 covers the target chip 4 and the self-destruct execution module 9 in the system circuit.

[0042] The self-destruct execution module 9 includes an execution layer and a substrate 10 arranged from top to bottom; the self-destruct execution module 9 is attached to the top cover 2 of the package. The execution layer includes metal pads 11 and an actuator; the actuator is a double V-shaped microbridge heating circuit fabricated using a Ni-Cr energetic thin film fabrication process with magnetron sputtering. The included angle of the double V-shaped microbridge heating circuit is between 45° and 145°, and the thickness is 0.1–1 μm.

[0043] like Figure 3 As shown, the control switch module 8 includes a first insulating layer 13, a current-guiding layer 14, a control layer 16, and a substrate 17 arranged from top to bottom; the first insulating layer 13 is made of silicon dioxide and has a thickness of 0.1–1 μm. The current-guiding layer 14 includes metal pads and a rectangular microbridge heating layer. Preferably, the rectangular microbridge heating layer has a thickness between 0.1 and 1 μm, a length of 10–100 μm, and a width of 10–100 μm.

[0044] The control layer 16 includes pad metal, a double V-shaped microbridge heating circuit, and a second energetic thin film 15. The included angle of the double V-shaped microbridge heating circuit is between 45° and 145°, with a thickness of 0.1–1 μm and a length of 10–100 μm. The second energetic thin film 15 is a multilayer energetic thin film formed by alternating deposition of nanoscale aluminum (Al) layers and nickel (Ni) layers using a magnetron sputtering process. The multilayer energetic thin film is a periodic unit structure formed by alternating stacking of aluminum (Al) layers and nickel (Ni) layers, with a thickness of 0.1–1 μm and a length of 10–100 μm. The second energetic thin film 15 is stacked tightly on top of the double V-shaped microbridge heating circuit.

[0045] like Figure 4As shown, the electrostatic discharge module 7 includes a second insulating layer 18, an electrostatic discharge layer 19, and a substrate 20 arranged from top to bottom. The second insulating layer 18 is made of silicon dioxide and has a thickness of 0.1–1 μm. The electrostatic discharge layer 19 has a comb-like structure, composed of staggered comb-shaped electrode plates. Preferably, the comb-shaped electrode plates are rectangular, with a thickness of 0.1–1 μm and a length of 10–100 μm, and the electrode plates are staggered with a gap of 0.1–1 μm.

[0046] This invention relates to a chip physical self-destruction control method based on energetic thin films, comprising the following steps:

[0047] 1) When the target chip 4 is in normal working condition, the self-destruct execution module 9 is connected to the system circuit 3; the current guiding layer of the control switch module 8 is connected in parallel with the self-destruct execution module 9, so that the self-destruct execution module 9 is short-circuited to prevent the self-destruct execution module 9 from being triggered falsely; the electrostatic discharge module 7 is connected in parallel with the self-destruct execution module 9, and the electrostatic discharge discharges electrostatic charge in real time to prevent electrostatic discharge from interfering with the trigger circuit.

[0048] 2) such as Figure 5 As shown, when system circuit 3 detects illegal intrusion signals such as sudden changes in light, physical impact, or encrypted wireless commands, the large pulse current generated by the discharge of the capacitor in the control layer 16 of the control switch module 8 passes through the Joule heating circuit of the microbridge heating circuit of the control layer 16, causing the bridge area material of the microbridge heating circuit to melt, vaporize, and generate plasma, thus causing an electrical explosion. The released energy activates the second energetic film 15 of the control layer 16 to undergo an aluminothermic reaction and burn, breaking the rectangular microbridge heating layer of the upper guide layer 14, causing the self-destruct execution module 9 to release the circuit isolation; system circuit 3 controls the double V-shaped microbridge heating circuit 12 of the self-destruct execution module 9 to be energized, and the temperature rises to the ignition threshold of the first energetic film 5 of the package top cover 2 within 5–50ms. The first energetic film 5, composed of Al / Ni material, undergoes an alloying reaction and releases heat. The reaction temperature is >2000℃, releasing high-temperature gas and shock waves, forming a local high pressure (≥2MPa) in the sealed cavity formed by the package housing base 1 and the package top cover 2, shattering the physical structure of the target chip 4, ensuring that sensitive information cannot be recovered.

[0049] Finally, it should be noted that the purpose of disclosing the embodiments is to help further understand the present invention. However, those skilled in the art will understand that various substitutions and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the present invention should not be limited to the content disclosed in the embodiments, and the scope of protection of the present invention is defined by the claims.

Claims

1. A chip physical self-destruct packaging structure based on an energetic thin film, characterized in that: It includes a housing, a self-destruct mechanism (9), a control switch module (8), an electrostatic discharge module (7), and a system circuit (3); The current guiding layer, self-destruct execution module (9), and static electricity conduction module (7) of the control switch module (8) are connected in parallel and then connected to the system circuit (3); The encapsulation housing includes an encapsulation housing base (1) and an encapsulation top cover (2); a first energetic thin film (5) is deposited on the inner surface of the encapsulation top cover (2); The self-destruct execution module (9) includes an execution layer and a substrate (10) arranged from top to bottom; the self-destruct execution module (9) is attached to the top cover (2); the execution layer includes a metal pad (11) and an actuator; the actuator is a double V-shaped microbridge heating circuit made of Ni-Cr energetic thin film by magnetron sputtering; The control switch module (8) includes an insulating layer (13), a current-guiding layer (14), a control layer (16), and a substrate (17) arranged from top to bottom; the current-guiding layer (14) includes metal pads and a rectangular microbridge heating layer; the control layer (16) includes pad metal, a double V-shaped microbridge heating circuit, and a second energetic thin film (15); the second energetic thin film (15) is stacked with the double V-shaped microbridge heating circuit; The first energetic thin film (5) and the second energetic thin film (15) are multilayer energetic thin films formed by alternating deposition of nanoscale aluminum and nickel layers by magnetron sputtering; The electrostatic discharge module (7) includes an insulating layer (18), an electrostatic discharge layer (19), and a substrate (20) arranged from top to bottom; the electrostatic discharge layer (19) is composed of comb-shaped electrode plates arranged in an alternating pattern.

2. The chip physical self-destruct packaging structure based on an energetic thin film according to claim 1, characterized in that: The multilayer energetic thin film is a periodic unit structure formed by alternating stacking of aluminum and nickel layers, and the periodic unit structure includes a single aluminum thin film and a single nickel thin film.

3. The chip physical self-destruct packaging structure based on an energetic thin film according to claim 2, characterized in that: The thickness of the single-layer aluminum film and the single-layer nickel film is 10nm to 100nm.

4. The chip physical self-destruct packaging structure based on an energetic thin film according to claim 3, characterized in that: The aluminum and nickel films are covered with a Parylene-C passivation layer, and the total thickness of the aluminum and nickel films is 50–200 μm.

5. The chip physical self-destruct packaging structure based on energetic thin films according to claim 1, characterized in that: The included angle of the double V-shaped microbridge heating circuit is between 45° and 145°, and the thickness is 0.1–1 μm.

6. The chip physical self-destruct packaging structure based on energetic thin films according to claim 1, characterized in that: The insulating layer (13) is made of silicon dioxide and has a thickness of 0.1 to 1 μm.

7. The chip physical self-destruct packaging structure based on an energetic thin film according to claim 1, characterized in that: The rectangular microbridge heating layer has a thickness of 0.1–1 μm, a length of 10–100 μm, and a width of 10–100 μm.

8. The chip physical self-destruct packaging structure based on energetic thin films according to claim 1, characterized in that: The comb-shaped electrode plate is a rectangle with a thickness of 0.1 to 1 μm and a length of 10 to 100 μm, and the gap between the staggered arrangement of the comb-shaped electrode plates is 0.1 to 1 μm.

9. A chip physical self-destruction control method based on energetic thin films, characterized in that: The method, implemented by the chip physical self-destruct packaging structure based on energetic thin films as described in claim 1, includes the following steps: Step (1): When the target chip (4) is in normal working condition, the self-destruct execution module (9) is connected to the system circuit (3); the current-conducting layer of the control switch module (8) is connected in parallel with the self-destruct execution module (9) to short-circuit the self-destruct execution module (9); the electrostatic discharge module (7) is connected in parallel with the self-destruct execution module (9) and the electrostatic discharge module (7) discharges electrostatic charge in real time; Step (2): When the system circuit (3) detects an intrusion signal, the pulse current generated by the capacitor discharge of the control layer (16) of the control switch module (8) passes through the Joule heat generated by the microbridge heating circuit of the control layer (16), causing the bridge area material of the microbridge heating circuit to melt, vaporize and generate plasma, resulting in an electrical explosion. The released energy activates the second energetic film (15) of the control layer (16) to undergo an aluminothermic reaction and burn, breaking the rectangular microbridge heating layer of the current guiding layer (14), causing the self-destruct execution module (9) to release the circuit isolation. The system circuit (3) controls the double V-shaped microbridge heating circuit (12) of the self-destruct execution module (9) to be energized and heated to the ignition threshold of the first energetic film (5) of the package top cover (2). The first energetic film (5) undergoes an alloying reaction, releasing heat, high-temperature gas and shock wave, forming a local high pressure in the sealed cavity formed by the package housing base (1) and the package top cover (2), shattering the physical structure of the target chip (4).

10. The chip physical self-destruction control method based on energetic thin films according to claim 9, characterized in that: In step (2), the first energetic thin film (5) undergoes an alloying reaction, releasing heat, high-temperature gas and shock waves, forming a local high pressure of ≥2MPa in the sealed cavity formed by the package housing base (1) and the package top cover (2), which crushes the physical structure of the target chip (4).

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