A method and system for testing the characteristics of a MOSFET
CN120195523BActive Publication Date: 2026-05-26SHENZHEN XINTONG ELECTRONIC TECH CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN XINTONG ELECTRONIC TECH CO LTD
- Filing Date
- 2025-03-26
- Publication Date
- 2026-05-26
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Figure CN120195523B_ABST
Abstract
This invention discloses a method and system for testing the characteristics of MOSFETs, belonging to the field of MOSFET testing technology. The method includes building a batch testing system, setting up a multi-channel interface, connecting the MOSFETs to be tested, selecting different connection methods to construct the test circuit as needed, designing an energy recovery module, storing excess energy through a supercapacitor, and applying a bias signal to the test circuit. The multi-channel interface of this invention supports the simultaneous connection of multiple MOSFETs, and combined with a flexible signal distribution unit, significantly improves testing efficiency. The energy recovery module stores excess energy through a supercapacitor, significantly reducing energy waste and improving the system's environmental performance. A PID controller dynamically adjusts the bias signal to ensure that the test results meet the target conditions, avoiding human intervention, and evaluating the performance of the MOSFET in practical applications from multiple dimensions.
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