A high-temperature superconducting thin film microwave surface resistance local test device and method

Abstract

A kind of high-temperature superconducting thin film microwave surface resistance local testing device and method, it is related to electronic technology field, testing device includes Rs test seat, calibration component, support plate, sealed cavity, wherein Rs test seat includes Rs test cavity, dielectric column component, annular metal film, dielectric column component is formed by integrally and coaxially arranged dielectric cylinder and dielectric disc, dielectric disc is located at the bottom of dielectric cylinder, and the outer portion of the lower surface of dielectric disc is plated with annular metal film.The present application solves the problem of the misalignment and easy deformation of the metal ring in the existing testing device by plating the annular metal film on the lower surface of the dielectric disc of the dielectric column component, provides continuous and stable testing conditions for the local testing of high-temperature superconducting thin film microwave surface resistance, and ensures high sensitivity and accuracy of testing.

Description

Technical Field

[0001] This invention relates to the field of electronics technology, and in particular to a device and method for localized testing of microwave surface resistance of high-temperature superconducting thin films. Background Technology

[0002] High-temperature superconducting (HTS) thin films exhibit microwave surface resistance (Rs) in the liquid nitrogen temperature range that is 2-3 orders of magnitude lower than that of conventional good conductors. This low-loss characteristic enables HTS-based HTS-based passive microwave devices to possess superior performance in the microwave band that is unmatched by conventional devices. As one of the most important parameters of HTS thin films, the microwave surface resistance (Rs) is closely related to the performance of HTS-based passive microwave devices; therefore, measuring the microwave surface resistance (Rs) of HTS thin films is of paramount importance.

[0003] Currently, the most representative methods for Rs testing are the quasi-optical cavity test method and the double-ended short-circuit test method.

[0004] like Figure 1 As shown, the quasi-optical cavity testing method utilizes the principle of optical focusing to focus electromagnetic energy onto the HTS film under test. The higher the operating frequency during testing, the smaller the focused area on the HTS film, thus enabling the measurement of local Rs values ​​of the HTS film. Currently reported quasi-optical cavity testing methods operate at high frequencies, typically above 100 GHz, and the experimental equipment is expensive and lacks versatility.

[0005] like Figure 2 As shown, the double-ended short-circuit test method uses the same test device to test two HTS films under test, obtaining the average microwave surface resistance of the two HTS films. Improving the test resolution of the double-ended short-circuit test method requires reducing the cavity diameter, but this increases the cavity wall loss, reducing the Q value of the resonant cavity and the test sensitivity. When the cavity diameter is 10 mm, the Q value of the resonant cavity is better than 150,000, and the simulation results of the cavity wall current are as follows. Figure 3 As shown in the figure. When the cavity diameter is 5mm, the Q value of the resonant cavity is better than 30000, and the cavity wall current increases significantly. The simulation results are as follows. Figure 4 As shown. Therefore, the sensitivity of the double-ended short-circuit test method is not high. The currently reported double-ended short-circuit test method can test 3-inch superconducting thin films at a resonant frequency of 22 GHz, with a dimensional resolution of a 16 mm diameter circle and a Q value of around 5000 to 72000.

[0006] Existing Chinese patent CN201410610448.5, "Device and Method for Testing Microwave Surface Resistance Distribution of High-Temperature Superconducting Thin Films," discloses a device for testing the local resistance of the microwave surface of high-temperature superconducting thin films, such as... Figure 5As shown, the device features a metal ring fixed to the inner wall of the shielding housing. However, ensuring the metal ring is coaxial with the shielding housing and dielectric pillar is difficult, and the operation is complex and the process cumbersome. Furthermore, the metal ring's thickness ranges from only 0.1mm to 0.5mm, making it very thin as part of the device. This thinness makes it prone to deformation during installation and structural warping during use, leading to poor contact between the superconducting film under test (or calibration components) and the metal ring. This makes it difficult to guarantee continuous and stable testing conditions, affecting test accuracy. Summary of the Invention

[0007] Based on the above problems, the purpose of this invention is to improve the existing device, solve the problems of misalignment and easy deformation of the metal ring, provide continuous and stable test conditions for local microwave surface resistance testing of high-temperature superconducting thin films, and ensure high sensitivity and accuracy of the test.

[0008] The technical solution adopted in this invention is a localized testing device for microwave surface resistance of high-temperature superconducting thin films, comprising an Rs test holder, a calibration assembly, a support plate, and a sealed cavity, wherein:

[0009] The Rs test socket includes an Rs test cavity, a dielectric pillar assembly, and an annular metal film. The Rs test cavity has symmetrically arranged input coupling structures and output coupling structures on both sides. The dielectric pillar assembly consists of an integrally formed and coaxially arranged dielectric cylinder and dielectric disk. The dielectric disk is located at the bottom of the dielectric cylinder. A recess is formed at the bottom of the Rs test cavity, and the dielectric disk is embedded in the recess and fixedly connected to the Rs test cavity. The dielectric cylinder is located inside the Rs test cavity and is coaxial with the Rs test cavity. The outer portion of the lower surface of the dielectric disk is coated with an annular metal film, which is concentric with the dielectric cylinder. The lower surface of the annular metal film and the bottom surface of the Rs test cavity are on the same plane, together forming the test plane of the Rs test socket.

[0010] The HTS film to be tested is placed on the test plane of the Rs test holder and supported and secured by a support plate. The edge of the support plate is detachably connected to the outer extension of the bottom end face of the Rs test chamber.

[0011] The calibration component is detachably placed on the test plane of the Rs test fixture;

[0012] The sealing cavity is detachably sealed and fixed to the outer end face of the bottom surface of the Rs test cavity, and covers the calibration component, or support plate and the HTS film to be tested.

[0013] Furthermore, both the input coupling structure and the output coupling structure are coupling loop structures.

[0014] Furthermore, the calibration assembly includes a calibration plate and a calibration holder. The edge portion of the calibration plate is detachably connected to the outer portion of the bottom end face of the Rs test cavity. Except for the absence of input coupling and output coupling structures, the calibration holder has the same structure as the Rs test holder, i.e., it also includes a cavity, a dielectric pillar assembly, and an annular metal film. However, its cavity has no input coupling and output coupling structures. Except that the outer diameter of the outer portion of the calibration holder's cavity is smaller than the outer diameter of the outer portion of the Rs test cavity, the dimensions of the remaining parts are the same. The calibration holder and the Rs test holder are placed inverted symmetrically with respect to the test plane, and the outer portion of the calibration holder is detachably connected to the outer portion of the bottom end face of the Rs test cavity.

[0015] Furthermore, the medium disk is fixedly connected to the Rs test cavity by welding.

[0016] Furthermore, the thickness of the annular metal film ranges from 300 nm to 1 μm, and the thickness of the dielectric disk ranges from 0.2 mm to 1 mm.

[0017] Furthermore, the annular metal film is an electroplated silver dielectric film.

[0018] Furthermore, the dielectric disk is provided with at least one vent hole, which is located within the corresponding position range of the inner ring of the annular metal film. Since water vapor may condense under liquid nitrogen testing conditions, damaging the superconducting thin film used in the test and reducing the Q value of the resonant cavity, venting can be achieved through the vent hole.

[0019] The present invention also provides a method for localized microwave surface resistance testing of high-temperature superconducting thin films using the above-described testing apparatus, the method comprising the following steps:

[0020] Step 1: Set the microwave surface resistance to R. S1 The calibration plate is mounted on the test plane of the Rs test holder, with the upper surface of the calibration plate in close contact with the annular metal film of the Rs test holder. After sealing the calibration plate with a sealed cavity, the test device is placed at the operating temperature of the HTS film to be tested, and its quality factor Q is measured. 01 ;

[0021] Step 2: Set the microwave surface resistance to R. S2 The calibration holder with a value of 0 is assembled on the test plane of the Rs test holder, with the annular metal film of the calibration holder facing directly and tightly against the annular metal film of the Rs test holder. After sealing the calibration holder with a sealed cavity, the test device is placed at the operating temperature of the HTS film to be tested, and its quality factor Q is measured. 02 ;

[0022] Step 3: Assemble the HTS film to be tested on the test plane of the Rs test holder, so that the upper surface of the HTS film to be tested is in close contact with the annular metal film of the Rs test holder, and use a support plate to support and fix the HTS film to be tested. After sealing the HTS film to be tested and the support plate with a sealed cavity, place the test device in the working temperature of the HTS film to be tested and measure its quality factor Q0.

[0023] Step 4: According to the formula

[0024]

[0025] The microwave surface resistance Rs of the HTS thin film under test located in the inner circle of the annular metal film was calculated.

[0026] The beneficial effects of this invention are as follows:

[0027] Existing high-temperature superconducting thin film microwave surface resistivity distribution testing devices, which use a shielding shell, dielectric pillar, and metal ring to form a test base, suffer from several drawbacks. Firstly, it is difficult to ensure the metal ring is coaxial with the shielding shell and dielectric pillar during fixing. Secondly, the metal ring is prone to deformation during installation and structural warping during use. The testing device of this invention addresses these shortcomings:

[0028] This invention introduces a dielectric disk structure at the bottom of the existing dielectric column and deposits an annular metal film on the lower surface of the dielectric disk. The dielectric column assembly of this invention consists of an integrally formed and coaxial dielectric cylinder and dielectric disk. The annular metal film is deposited using a coating process, ensuring that the annular metal film and the dielectric cylinder form a concentric structure, unaffected by the installation process. It will not deform, warp, or shift during use, ensuring good contact between the superconducting thin film under test (or calibration component) and the annular metal film. This invention solves the problems of misalignment and easy deformation of the existing metal ring structure, providing continuous and stable testing conditions for local microwave surface resistance testing of high-temperature superconducting thin films, ensuring high sensitivity and accuracy, and is particularly suitable for widely used 2-inch HTS thin films.

[0029] The annular metal film used in this invention forms an integrated device with the test chamber, and the dielectric disk constitutes a micro-perturbation that does not affect the working mode and field distribution of the device.

[0030] The measured resolution diameter of the device of the present invention is completely determined by the inner diameter of the annular metal film. The test chamber can be reused. For the same chamber, the resolution of the device can be changed by changing the inner diameter of the annular metal film.

[0031] Compared to the quasi-optical cavity testing method, this invention has high versatility; compared to the double-ended short-circuit testing method, this invention improves the test resolution from 16mm to 4.5mm, enabling precise local testing of the HTS film under test, and has a wider range of applications. Attached Figure Description

[0032] Figure 1 This is a structural diagram of an existing quasi-optical cavity testing method.

[0033] Figure 2 This is a structural diagram of an existing double-ended short-circuit test device.

[0034] Figure 3 The figure shows the simulation results of the cavity wall current when the cavity wall diameter is 10 mm in the double-ended short-circuit test method.

[0035] Figure 4 The figure shows the simulation results of the cavity wall current when the cavity wall diameter is 5mm in the double-ended short-circuit test method.

[0036] Figure 5 This is a schematic diagram of an existing high-temperature superconducting thin film microwave surface resistance distribution testing device.

[0037] Figure 6 This is a cross-sectional view of the Rs test socket in the test device of Embodiment 1 of the present invention;

[0038] Figure 7 This is a cross-sectional view of the test device of Embodiment 1 of the present invention after loading the HTS film to be tested;

[0039] Figure 8 This is a cross-sectional view of the test device of Embodiment 1 of the present invention after loading the calibration plate;

[0040] Figure 9 This is a cross-sectional view of the test device of Embodiment 1 of the present invention after the calibration holder has been loaded;

[0041] Figure 10 This is a simulation three-dimensional model of the testing device in Embodiment 1 of the present invention;

[0042] Figure 11 Simulation diagram of electromagnetic field distribution for an existing metal ring structure testing device;

[0043] Figure 12 This is a simulation diagram of the electromagnetic field distribution of the device in Embodiment 1 of the present invention. Detailed Implementation

[0044] To better understand the above-mentioned objectives, features, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0045] Example 1

[0046] Figures 6-9 This invention illustrates a specific embodiment of the high-temperature superconducting thin film microwave surface resistance localization testing device, comprising an Rs test holder, a calibration assembly, a support plate 5, and a sealed cavity 6, wherein:

[0047] The Rs test socket includes an Rs test cavity 1, a dielectric column assembly 2, and an annular metal membrane 3. The Rs test cavity 1 has symmetrically arranged input coupling structures 10 and output coupling structures 11 on both sides. Both the input coupling structure 10 and the output coupling structure 11 are coupling ring structures. The dielectric column assembly 2 consists of an integrally formed and coaxially arranged dielectric cylinder 201 and dielectric disk 202. The dielectric disk 202 is located at the bottom of the dielectric cylinder 201. The main body of the Rs test cavity 1 is a hollow cylindrical structure with a closed top and an open bottom. The bottom end also has an outwardly extending portion. The device includes a recessed area, into which a dielectric disk 202 is embedded and fixedly connected to the Rs test chamber 1 by welding. A dielectric cylinder 201 is located inside the Rs test chamber 1 and is coaxial with it. An annular metal film 3 is coated on the outer part of the lower surface of the dielectric disk 202, and the annular metal film 3 is concentric with the dielectric cylinder 201. The lower surface of the annular metal film 3 and the bottom end face of the Rs test chamber 1 are on the same plane, together forming the test plane of the Rs test holder. Two exhaust holes 9 are also provided on the dielectric disk 202, and the exhaust holes 9 are located within the corresponding position range of the inner ring of the annular metal film 3.

[0048] The HTS film 4 to be tested is placed on the test plane of the Rs test holder and supported and secured by the support plate 5. The edge of the support plate 5 is detachably connected to the outer extension of the bottom end face of the Rs test chamber 1.

[0049] The calibration component is detachably placed on the test plane of the Rs test fixture;

[0050] The calibration assembly specifically includes a calibration plate 7 and a calibration base 8. The edge portion of the calibration plate 7 is detachably connected to the outer portion of the bottom end face of the Rs test chamber 1. Except for the absence of input coupling and output coupling structures, the calibration base 8 has the same structure as the Rs test base, that is, it also includes a cavity, a dielectric column assembly, and an annular metal film. The dielectric disk of the dielectric column assembly of the calibration base 8 also has two corresponding exhaust holes, but its cavity has no input coupling and output coupling structures. Except that the outer diameter of the outer extension portion of the cavity of the calibration base 8 is smaller than the outer diameter of the outer extension portion of the Rs test chamber 1, the dimensions of the rest are the same. The calibration base 8 and the Rs test base are placed inverted symmetrically with respect to the test plane, and the outer extension portion of the calibration base 8 is detachably connected to the outer portion of the bottom end face of the Rs test chamber 1.

[0051] The sealing cavity 6 is detachably sealed and fixed to the outer part of the bottom end face of the Rs test cavity 1, and covers the calibration component, or support plate 5 and the HTS film 4 to be tested.

[0052] The specific method by which the support plate 5, calibration plate 7, calibration seat 8, sealing cavity 6 are detachably connected to the outer extension of the bottom end face of the Rs test cavity 1 can adopt conventional connection methods, such as screw connection, snap-fit, etc.

[0053] This embodiment is for the TE working mode. 012 The dielectric resonator of the mode, using its boundary conditions and Maxwell's equations, was calculated to have a resonant frequency of 37 GHz. The specific physical dimensions of each component are as follows:

[0054] The Rs test chamber 1 is made of silver-plated brass, and its main body is a hollow cylindrical structure with an outer diameter of 45 mm and a height of 17 mm. The dielectric column assembly 2 is made of a low-loss, high-dielectric-constant, high-Q-value material, specifically sapphire. Since the dielectric disk 202 is made of sapphire, it has high hardness and adopts an integral structure. Compared with the existing test devices with metal ring structures, which are generally made of copper, the structure of this invention is not easily deformed. The dielectric cylinder 201 has a diameter of 2.6 mm and a height of 5.2 mm. The dielectric disk 202 has a thickness of 1 mm. The annular metal film 3 is made of silver-plated material, with an inner diameter of 4.2 mm and a thickness of 1 μm.

[0055] The HTS film 4 to be tested has a planar dimension of 2 inches and a thickness of 500 nm.

[0056] In this embodiment, the relationship between the unloaded quality factor Q0 of the dielectric resonator formed by the HTS film under test 4 and the Rs test holder 1 and the microwave surface resistance Rs of the HTS film under test 4 is as follows:

[0057]

[0058] In the formula, A and B are constants that are independent of the microwave surface resistance Rs of the HTS thin film 4 to be measured, and are determined by the measurement method.

[0059] The method of using the device in this embodiment is as follows:

[0060] When loading the HTS film to be tested: Place the HTS film 4 to be tested on the test plane of the Rs test holder and secure it with the detachable support plate 5, so that the upper surface of the HTS film 4 to be tested is in close contact with the annular metal film 3 of the Rs test holder. The HTS film 4 to be tested and the Rs test holder form a working mode of TE. 012 The dielectric resonator of the mode is then used to cover the support plate 5 and the HTS film 4 to be tested using a sealed cavity 6. The sealed cavity 6 is connected and fixed to the outer part of the bottom end face of the Rs test cavity 1.

[0061] When loading calibration plate 7: assemble calibration plate 7 on the test plane of Rs test holder, so that the upper surface of calibration plate 7 is in close contact with the annular metal film 3 of Rs test holder, the edge of calibration plate 7 is connected and fixed to the outer extension of the bottom end face of Rs test chamber 1, and then use sealing cavity 6 to cover calibration plate 7, and sealing cavity 6 is connected and fixed to the outer extension of the bottom end face of Rs test chamber 1.

[0062] When loading the calibration base 8: assemble the calibration base 8 on the test plane of the Rs test base, so that the annular metal film of the calibration base 8 is directly opposite and in close contact with the annular metal film 3 of the Rs test base. The outer extension of the calibration base 8 is connected and fixed to the outer extension of the bottom end face of the Rs test chamber 1. Then, the sealing cavity 6 is used to cover the calibration base 8, and the sealing cavity 6 is connected and fixed to the outer extension of the bottom end face of the Rs test chamber 1.

[0063] Example 2

[0064] A method for localized microwave surface resistance testing of high-temperature superconducting thin films using the testing apparatus described in Example 1 includes the following steps:

[0065] Step 1: Set the microwave surface resistance to R. S1 The calibration plate 7 is assembled on the test plane of the Rs test holder, with the upper surface of the calibration plate 7 in close contact with the annular metal film 3 of the Rs test holder. After the calibration plate 7 is sealed with the sealing cavity 6, the test device is placed in the working temperature of the HTS film 4 to be tested, and its quality factor Q is measured. 01 ;

[0066] Step 2: Set the microwave surface resistance to R. S2 The calibration holder 8 with a value of 0 is assembled on the test plane of the Rs test holder, with the annular metal film of the calibration holder 8 facing and tightly adhering to the annular metal film 3 of the Rs test holder. After sealing the calibration holder 8 with the sealing cavity 6, the test device is placed at the working temperature of the HTS film 4 to be tested, and its quality factor Q is measured. 02 ;

[0067] Step 3: Assemble the HTS film 4 to be tested on the test plane of the Rs test holder, so that the upper surface of the HTS film 4 to be tested is in close contact with the annular metal film 3 of the Rs test holder, and use the support plate 5 to support and fix the HTS film 4 to be tested. After sealing the HTS film 4 to be tested and the support plate 5 with the sealing cavity 6, place the test device in the working temperature of the HTS film 4 to be tested and measure its quality factor Q0.

[0068] Step 4: According to the formula

[0069]

[0070] The microwave surface resistance Rs of the portion of the HTS thin film 4 to be tested located in the inner ring of the annular metal film 3 was calculated.

[0071] Due to the presence of the annular metal film 3, the electromagnetic field energy acting on the HTS film 4 under test is only the area of ​​the inner ring of the annular metal film 3. Therefore, the final test result is the microwave surface resistance of the HTS film portion located in the inner ring of the annular metal film 3.

[0072] Using the apparatus and method described in this embodiment, and taking HTS films with nominal microwave surface resistance Rs values ​​of 0.250 mΩ, 0.300 mΩ, and 0.350 mΩ as the HTS films to be tested, the simulation results of the dielectric resonator constructed by loading the HTS films to be tested are shown in the table below. It can be seen that the relative deviation between the calculated and nominal microwave surface resistance values ​​of the HTS films to be tested is very small (all within 4%), indicating that the testing accuracy of the apparatus described in this embodiment is very high.

[0073]

[0074] The apparatus and method described in this invention have significant advantages over the test methods in the two international standards. Specifically: the resonant frequency of the quasi-optical cavity test method is 145 GHz, while the operating frequency of the apparatus described in Example 1 is only 37 GHz, thus improving its versatility; the double-ended short-circuit test method has a Q value of 5000 to 72000 and a resolution of 16 mm at a resonant frequency of 22 GHz, while the resolution of the apparatus described in Example 1 reaches 4.5 mm, greatly improving the resolution. The simulation three-dimensional model of the test apparatus in Example 1 of this invention is as follows: Figure 10 As shown.

[0075] Figure 11 This is a simulation diagram of the electromagnetic field distribution of an existing metal ring structure testing device. Figure 12 The image shows a simulation diagram of the electromagnetic field distribution of the device in Embodiment 1 of the present invention. A comparison of the electromagnetic field distributions in the two images shows that the electromagnetic field distribution of the structure of the present invention has not changed and meets the test requirements.

Claims

1. A localized microwave surface resistance testing device for high-temperature superconducting thin films, characterized in that, Includes an Rs test socket, calibration components, a support plate (5), and a sealed cavity (6), wherein: The Rs test socket includes an Rs test cavity (1), a dielectric column assembly (2), and an annular metal film (3). The Rs test cavity (1) has symmetrically arranged input coupling structures (10) and output coupling structures (11) on both sides. The dielectric column assembly (2) consists of an integrally formed and coaxially arranged dielectric cylinder (201) and dielectric disk (202). The dielectric disk (202) is located at the bottom of the dielectric cylinder (201). A recess is formed at the bottom of the Rs test cavity (1), and the dielectric disk (202)... 02) Embedded in the recess and fixedly connected to the Rs test chamber (1), the dielectric cylinder (201) is located inside the Rs test chamber (1) and is coaxial with the Rs test chamber (1). The outer part of the lower surface of the dielectric disk (202) is coated with an annular metal film (3). The annular metal film (3) is concentric with the dielectric cylinder (201). The lower surface of the annular metal film (3) and the bottom end face of the Rs test chamber (1) are on the same plane, together forming the test plane of the Rs test seat. The HTS film (4) to be tested is placed on the test plane of the Rs test seat and supported and fastened by the support plate (5). The edge part of the support plate (5) is detachably connected to the outer part of the bottom end face of the Rs test cavity (1). The calibration component is detachably placed on the test plane of the Rs test fixture; The sealing cavity (6) is detachably sealed and fixed to the outer end face of the bottom surface of the Rs test cavity (1), and covers the calibration component, or support plate (5) and the HTS film to be tested (4).

2. The high-temperature superconducting thin film microwave surface resistance local testing device according to claim 1, characterized in that: Both the input coupling structure (10) and the output coupling structure (11) are coupling loop structures.

3. The high-temperature superconducting thin film microwave surface resistance local testing device according to claim 1, characterized in that: The calibration assembly includes a calibration plate (7) and a calibration base (8). The edge portion of the calibration plate (7) is detachably connected to the outer portion of the bottom end face of the Rs test cavity (1). Except for the absence of an input coupling structure and an output coupling structure, the calibration base (8) has the same structure as the Rs test base. The calibration base (8) and the Rs test base are placed inverted symmetrically with respect to the test plane, and the outer portion of the calibration base (8) is detachably connected to the outer portion of the bottom end face of the Rs test cavity (1).

4. The high-temperature superconducting thin film microwave surface resistance local testing device according to claim 1, characterized in that: The medium disk (202) is fixedly connected to the Rs test cavity (1) by welding.

5. The high-temperature superconducting thin film microwave surface resistance local testing device according to claim 1, characterized in that: The thickness of the annular metal film (3) ranges from 300 nm to 1 μm, and the thickness of the dielectric disk (202) ranges from 0.2 mm to 1 mm.

6. The high-temperature superconducting thin film microwave surface resistance local testing device according to claim 1, characterized in that: The annular metal film (3) is an electroplated silver dielectric film.

7. The high-temperature superconducting thin film microwave surface resistance local testing device according to claim 1, characterized in that: At least one exhaust hole (9) is also provided on the medium disk (202), and the exhaust hole (9) is located within the corresponding position range of the inner circle of the annular metal film (3).

8. A method for localized microwave surface resistance testing of high-temperature superconducting thin films using the testing apparatus described in any one of claims 1-7, comprising the following steps: Step 1: Set the microwave surface resistance to R. S1 The calibration plate (7) is assembled on the test plane of the Rs test holder, so that the upper surface of the calibration plate (7) is in close contact with the annular metal film (3) of the Rs test holder. After the calibration plate (7) is sealed with a sealing cavity (6), the test device is placed in the working temperature of the HTS film (4) to be tested, and its quality factor Q is measured. 01 ; Step 2: Set the microwave surface resistance to R. S2 The calibration holder (8) with a value of 0 is assembled on the test plane of the Rs test holder, with the annular metal film of the calibration holder (8) facing and closely adhering to the annular metal film (3) of the Rs test holder. After sealing the calibration holder (8) with the sealing cavity (6), the test device is placed in the working temperature of the HTS film (4) to be tested, and its quality factor Q is measured. 02 ; Step 3: Assemble the HTS film (4) to be tested on the test plane of the Rs test holder, so that the upper surface of the HTS film (4) to be tested is in close contact with the annular metal film (3) of the Rs test holder, and use the support plate (5) to support and fix the HTS film (4) to be tested. After sealing the HTS film (4) to be tested and the support plate (5) with the sealing cavity (6), place the test device in the working temperature of the HTS film (4) to be tested and measure its quality factor Q0. Step 4: According to the formula The microwave surface resistance R of the HTS thin film (4) to be tested, located in the inner circle of the annular metal film (3), was calculated. s .

Images