Force-electricity characteristic simulation method and platform of flexible semiconductor device and storage medium

Abstract

The invention relates to a force-electricity characteristic simulation method and platform of a flexible semiconductor device and a readable storage medium, and the method comprises the steps: obtaining a stress parameter value and a device application parameter value of the flexible semiconductor device, the stress parameter value is used for describing stress borne by the flexible semiconductor device or deformation of a silicon-based material of the flexible semiconductor device based on the stress; on the basis of a first relation model of the energy band physical parameters and the stress parameters of the silicon-based material, a second relation model of the energy band physical parameters and the conductive parameters and the stress parameter values, corresponding conductive parameter values are obtained through calculation; and based on the conductive parameter value and the device application parameter value, obtaining a force-electricity characteristic curve and / or a force-electricity characteristic parameter value of the flexible semiconductor device, and obtaining the force-electricity characteristic of the flexible semiconductor device under the bending stress in a simulation mode. The problem that the electrical performance of the flexible chip is reduced due to the fact that the flexible chip is researched and developed through the design process experience of a non-flexible chip is solved.

Images