Power drive integrated circuit and power conversion circuit using same

CN120222775APending Publication Date: 2025-06-27NUVOTON
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Patent Information

Application Number
CN202410189775.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-27
Filing Date
2024-02-20
Publication Date
2025-06-27

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Abstract

The embodiment of the invention relates to a power driving integrated circuit and a power conversion circuit using the same. The power driving integrated circuit can be used for driving the power conversion circuit formed by an upper side P-type transistor or an upper side N-type transistor. Wherein the power supply driving integrated circuit is internally provided with an upper side switch driving circuit which is configured in the isolated area, and the isolated area is also internally provided with an upper side power supply circuit. When the upper side is provided with the P-type transistor, the input voltage of the P-type source electrode is input to the upper side power supply circuit so as to generate the operation voltage required by the upper side switch driving circuit. When an N-type transistor is configured on the upper side, a bootstrap circuit mode is adopted for driving, so that the driving circuit can be used for driving the upper-side N-type transistor and the upper-side P-type transistor at the same time.
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