Power drive integrated circuit and power conversion circuit using same
CN120222775APending Publication Date: 2025-06-27NUVOTON
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Patent Information
- Application Number
- CN202410189775.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-12-27
- Filing Date
- 2024-02-20
- Publication Date
- 2025-06-27
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Figure CN120222775A_ABST
Abstract
The embodiment of the invention relates to a power driving integrated circuit and a power conversion circuit using the same. The power driving integrated circuit can be used for driving the power conversion circuit formed by an upper side P-type transistor or an upper side N-type transistor. Wherein the power supply driving integrated circuit is internally provided with an upper side switch driving circuit which is configured in the isolated area, and the isolated area is also internally provided with an upper side power supply circuit. When the upper side is provided with the P-type transistor, the input voltage of the P-type source electrode is input to the upper side power supply circuit so as to generate the operation voltage required by the upper side switch driving circuit. When an N-type transistor is configured on the upper side, a bootstrap circuit mode is adopted for driving, so that the driving circuit can be used for driving the upper-side N-type transistor and the upper-side P-type transistor at the same time.
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