Tantalum oxynitride single crystal film and preparation method thereof

Abstract

The invention discloses a tantalum oxynitride single crystal film and a preparation method thereof. The preparation method comprises the following steps: S1, preparing a TaO target material with the density being greater than 90% by adopting a solid-phase reaction method; s2, cleaning the single crystal substrate, and feeding the single crystal substrate into a sputtering chamber of magnetron sputtering equipment; s3, the sputtering chamber is vacuumized, and the single crystal substrate is heated; s4, nitrogen is introduced into the sputtering chamber, TaO is used as a target material, and a radio frequency power supply is turned on for pre-sputtering; s5, the power of a power source is set, the nitrogen flow, the cavity air pressure and the working distance are adjusted, and the tantalum oxynitride thin film grows on the single crystal substrate through magnetron sputtering; and S6, after the power supply is turned off, the air pressure of the cavity is kept unchanged, the TaOxNy single crystal film is obtained through cooling, 1 < = X < = 2.5, and 0.01 < = Y < = 1.5. According to the preparation method, the high-density TaO target material is prepared by adopting a solid-phase reaction method, the TaOxNy single crystal film can be directly synthesized by utilizing a radio frequency magnetron sputtering technology, and the obtained film has good crystal quality.

Images