Composite material, film, photoelectric device, and display device

Abstract

The invention discloses a composite material, a film, a photoelectric device and a display device. The composite material comprises N-type inorganic semiconductor particles and a compound shown in the formula (I), the structural formula of the compound shown in the formula (I) is # imgabs0 #, and the composite material has high stability.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and particularly to a composite material, a thin film, an optoelectronic device and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the display technology field. QLEDs have the advantages of saturated emission light color, adjustable wavelength, low turn-on voltage, good solution processability, easy fine control of quantum dots, etc., and have high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors of OLEDs.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of an electric field, the holes generated by the anode and the electrons generated by the cathode of the optoelectronic device move, are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, which excite the light-emitting molecules to finally generate visible light.

[0004] N-type inorganic semiconductor particles are used as electron transport materials due to their good electron transport performance. However, the stability of existing N-type inorganic semiconductor particles is poor and needs to be further improved. Summary of the Invention

[0005] In view of this, the present application provides a composite material, aiming to improve the problem of poor electron transport stability of the materials of the existing electron transport layer.

[0006] An embodiment of the present application provides a composite material, which includes N-type inorganic semiconductor particles and a compound represented by formula (I), wherein the structural formula represented by formula (I) is:

[0007]

[0008] wherein, m and n are each independently 1 or 2;

[0009] L is a linking group, and can be selected from a single bond, an unsubstituted or first substituent-substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2)n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1 to 20, and the first substituent includes halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 20 alkyl, C1-C 20 alkoxy, C1-C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, or one or more thereof;

[0010] Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto, cyano; C1-C 30 alkyl, C3-C 30 cycloalkyl, C1-C 20 alkoxy, aryl having 5 to 60 ring atoms, heteroaryl having 5 to 60 ring atoms, aryloxy having 5 to 60 ring atoms, heteroaryloxy having 5 to 60 ring atoms, or a combination of one or more thereof, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto, cyano, C1-C 10 alkyl, C1-C 10 alkoxy, or one or more thereof.

[0011] Optionally, in some embodiments, the succinimide maleimide acid ester compound is coordinately connected to the N-type inorganic semiconductor particles; and / or

[0012] In the composite material, the molar ratio of the N-type inorganic semiconductor particles to the succinimide maleimide acid ester compound is 1:(0.01-0.1); and / or

[0013] The average particle size range of the N-type inorganic semiconductor particles is 5-8 nm; and / or

[0014] The N-type inorganic semiconductor particles include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. Among them, the materials of the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0015] Optionally, in some embodiments, L is selected from a single bond, -(CH2) that is unsubstituted or substituted by a first substituent n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 -, and -(CH2) n18 COO(CH2) n19 -, and one or more combinations of two or more thereof, where n1 to n19 are each independently selected from integers of 1 to 15, and the first substituent includes halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 15 alkyl, C1-C 15 alkoxy, C1-C 15One or more of an alkylthio group, an aryl group having 6 to 30 ring atoms, an aryloxy group having 6 to 30 ring atoms, and an arylthio group having 6 to 30 ring atoms; and / or

[0016] Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxy, carboxy, nitro, sulfo, aldehyde, mercapto, cyano; C1-C 20 alkyl which is unsubstituted or substituted with a second substituent, C3-C 20 cycloalkyl, C1-C 15 alkoxy, an aryl group having 5 to 30 ring atoms, a heteroaryl group having 5 to 30 ring atoms, an aryloxy group having 5 to 30 ring atoms, and a heteroaryloxy group having 5 to 30 ring atoms, a combination of one or more of them, wherein the second substituent may be selected from, but not limited to, halogen, hydroxy, carboxy, nitro, sulfo, aldehyde, mercapto, cyano, C1-C 10 alkyl, C1-C 10 alkoxy, one or more of them.

[0017] Optionally, in some embodiments, L is selected from a single bond, -(CH2) n1 - which is unsubstituted or substituted with a first substituent, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 -, a combination of two or more of them, wherein n1 to n19 are each independently selected from integers of 1-10, and the first substituent includes halogen, hydroxy, nitro, cyano, isocyano, silyl, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, an aryl group having 6 to 15 ring atoms, an aryloxy group having 6 to 15 ring atoms, and an arylthio group having 6 to 30 ring atoms, one or more of them; and / or

[0018] Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxy, carboxy, nitro, sulfo, formyl, mercapto, cyano; C1-C alkyl which is unsubstituted or substituted with a second substituent, C3-C cycloalkyl, C1-C alkoxy, aryl having 5 to 15 ring atoms, heteroaryl having 5 to 15 ring atoms, aryloxy having 5 to 15 ring atoms, heteroaryloxy having 5 to 15 ring atoms, or a combination of one or more thereof, wherein the second substituent may be selected from, but is not limited to, halogen, hydroxy, carboxy, nitro, sulfo, formyl, mercapto, cyano, C1-C alkyl, C1-C alkoxy, or a combination of one or more thereof. 10 alkyl, C3-C 10 cycloalkyl, C1-C 10 alkoxy, aryl having 5 to 15 ring atoms, heteroaryl having 5 to 15 ring atoms, aryloxy having 5 to 15 ring atoms, heteroaryloxy having 5 to 15 ring atoms, or a combination of one or more thereof, wherein the second substituent may be selected from, but is not limited to, halogen, hydroxy, carboxy, nitro, sulfo, formyl, mercapto, cyano, C1-C 10 alkyl, C1-C 10 alkoxy, or a combination of one or more thereof.

[0019] Optionally, in some embodiments, L is selected from a single bond, -(CH2)n1- which is unsubstituted or substituted with a first substituent, -(CH2)n2CH=CH(CH2)n3-, -(CH2)n4C≡C(CH2)n5-, or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1 to 10, and the first substituent includes halogen, hydroxy, C1-C alkyl, C1-C alkoxy, C1-C alkylthio, or a combination of one or more thereof; and / or n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1 to 10, and the first substituent includes halogen, hydroxy, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, or a combination of one or more thereof; and / or

[0020] Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxy, carboxy, nitro, sulfo, formyl, mercapto, cyano, C1-C 10 alkyl, C3-C 10 cycloalkyl, C1-C 10 alkoxy, or a combination of one or more thereof.

[0021] Optionally, in some embodiments, the succinimidyl maleimidate compounds include, but are not limited to, N-succinimidyl 6-maleimidononanoate, N-succinimidyl 6-maleimidobutyrate, N-succinimidyl 6-maleimidooctanoate, N-succinimidyl 6-maleimidoheptanoate, N-succinimidyl 6-maleimidohexanoate ethyl ester, N-succinimidyl 6-maleimidohexanolate, or a combination of one or more thereof.

[0022] Correspondingly, the present application further provides a film, which comprises the composite material.

[0023] Correspondingly, the present application further provides an optoelectronic device, which includes a first electrode and a second electrode disposed opposite to each other, and further includes an electron transport layer located between the first electrode and the second electrode, and the material of the electron transport layer includes the composite material.

[0024] Optionally, in some embodiments, the first electrode and the second electrode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS. The material of the metal elemental electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or

[0025] The optoelectronic device further includes a light-emitting layer, which is located between the first electrode and the electron transport layer or between the second electrode and the electron transport layer. The material of the light-emitting layer includes one of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, a polymer containing B-N covalent bonding, a hybrid local charge transfer excited state material, an exciplex luminescent material, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni2+ 、Cd 2+ 、Cr 2+ 、Mn 2 + 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of the following, X is a halogen anion, including Cl - 、Br - 、I - One or more of the following; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of the following, X is a halogen anion, including Cl - 、Br - 、I - One or more of the following; and / or

[0026] The optoelectronic device further includes a hole transport layer located on a side of the light-emitting layer away from the electron transport layer, and the material of the hole transport layer includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or

[0027] The optoelectronic device further includes a hole injection layer on a side of the light-emitting layer away from the electron transport layer, and the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0028] Correspondingly, the present application further provides a display device including the optoelectronic device.

[0029] The composite material described in the present application includes N-type inorganic semiconductor particles and a succinimidyl maleimide acid ester compound connected to the surface of the N-type inorganic semiconductor particles, and has relatively high stability, so that a device using the composite material as an electron transport layer has a long lifespan. Description of the Drawings

[0030] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0031] Figure 1 is a flowchart of a method for preparing a thin film provided by an embodiment of the present application;

[0032] Figure 2 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0033] Figure 3 is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0034] Figure 4 is a schematic structural diagram of yet another optoelectronic device provided by an embodiment of the present application;

[0035] Figure 5 is a schematic structural diagram of yet another optoelectronic device provided by an embodiment of the present application;

[0036] Figure 6 is a schematic structural diagram of yet another optoelectronic device provided by an embodiment of the present application;

[0037] Figure 7 is a schematic structural diagram of yet another optoelectronic device provided by an embodiment of the present application;

[0038] Figure 8 It is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0039] Figure 9 It is a flowchart of a preparation method of an optoelectronic device provided by an embodiment of the present application.

[0040] Reference numerals:

[0041] Optoelectronic device 100; first electrode 10; electron transport layer 20; second electrode 30; light-emitting layer 40; hole transport layer 50; hole injection layer 60. Detailed implementation manners

[0042] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0043] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" usually refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0044] In the present application, "and / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B can be singular or plural.

[0045] In the present application, "at least one" means one or more, and "a plurality" means two or more. "At least one kind", "at least one of the following items (pieces)" or similar expressions refer to any combination of these items, including any combination of single item (piece) or plural items (pieces). For example, "at least one of a, b, or c", or, "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0046] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to the certain layer, or there are other spacer structure layers between the another layer and the certain layer. For example, when forming a second electrode "on" the first charge carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or there are other spacer structure layers between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0047] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the description of the said range has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the description of the range from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the said range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited numbers (fractions or integers) within the indicated range.

[0048] In this application, the aromatic group, aromatic, and aromatic ring system have the same meaning and can be interchanged.

[0049] In this application, the heteroaromatic group, heteroaromatic, and heteroaromatic ring system have the same meaning and can be interchanged.

[0050] In this application, "unsubstituted or substituted" means that the defined group can be substituted or unsubstituted. When the defined group is substituted and no other definition is provided, "substituted" means that the hydrogen of the compound or group is replaced by the following substituents: deuterium atom, halogen, hydroxyl group, nitro group, cyano group, isocyano group, amino group, azide group, amidino group, hydrazino group, hydrazone group, carbonyl group, carbamoyl group, mercapto group, ester group, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, silyl group, C1-C 20 alkyl group, C2-C 20 alkenyl group, C2-C 20 alkynyl group, C6-C 30 aryl group, C7-C 30 aralkyl group, C1-C 30 alkoxy group, C1-C 20 heteroalkyl group, C3-C 20 heterocyclic group, C3-C 20 heteroaralkyl group, C3-C 30 cycloalkyl group, C3-C 15 cycloalkenyl group, C6-C 15 cycloalkynyl group, C3-C30 heterocycloalkyl, or a combination thereof.

[0051] In the present application, "the number of ring atoms" refers to the number of ring atoms that form the ring itself in a structural compound obtained by bonding atoms in a ring (e.g., monocyclic compound, fused-ring compound, crosslinked compound, carbocyclic compound, heterocyclic compound), that is, the number of atoms forming the ring. When the ring is substituted with a substituent, the atoms contained in the substituent are not included in the ring atoms. The same applies to the "number of ring atoms" described below without special instructions. For example, the number of ring atoms in a benzene ring is 6, the number of ring atoms in a naphthalene ring is 10, and the number of ring atoms in a thienyl group is 5.

[0052] In the present application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, which can be a monocyclic aryl group, a fused-ring aryl group, or a polycyclic aryl group. For polycyclic ring systems, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" refers to an aryl group containing 6 to 40 ring atoms, and the aryl group can optionally be further substituted. Preferably, it is a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and the aryl group is optionally further substituted; suitable examples include but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthryl, phenanthryl, fluoranthenyl, triphenylenyl, pyrenyl, perylenyl, tetracenyl, fluorenyl, dinaphthylenephenyl, acenaphthylenyl, and their derivatives. It can be understood that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically such as acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aryl groups.

[0053] In the present application, the "heteroaryl or heteroaromatic group" means that at least one carbon atom in the aryl group is replaced by a non-carbon atom, and the non-carbon atom can be an N atom, an O atom, an S atom, an Si atom, a P atom, etc. For example, the "substituted or unsubstituted heteroaryl having 5 to 40 ring atoms" means a heteroaryl having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted heteroaryl having 6 to 14 ring atoms, and the heteroaryl is optionally further substituted; suitable examples include but are not limited to: thienyl, furyl, pyrrolyl, dioxazolyl, triazolyl, imidazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridinyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothienyl, benzofuryl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienyl, furanopyrrolyl, furanofuryl, thienofuryl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, phthalazinyl, phenanthridinyl, perimidinyl, quinazolinone, dibenzothienyl, dibenzofuryl, carbazolyl and its derivatives.

[0054] In the present application, the "alkyl group" may represent a straight-chain, branched-chain and / or cyclic alkyl group. The number of carbon atoms in the alkyl group can be 1 to 50, 1 to 30, 1 to 20, 1 to 10 or 1 to 6. A phrase containing this term, for example, "C" 1-9"Alkyl" means an alkyl group containing 1 to 9 carbon atoms, and each occurrence can independently be a C1 alkyl group, C2 alkyl group, C3 alkyl group, C4 alkyl group, C5 alkyl group, C6 alkyl group, C7 alkyl group, C8 alkyl group or C9 alkyl group. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyl octyl, 2-hexyloctyl, 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-heneicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontyl, etc.

[0055] In this application, "-C n H 2n+1 ", without special indication or limitation, represents a straight-chain alkyl group. For example, -C4H9 represents n-butyl.

[0056] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, the alkyl group defined above is connected to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-O-C(CH3)3 or -OtBu).

[0057] In this application, the single bond to which the substituent is attached passes through the corresponding ring, indicating that the substituent can be connected to any optional position of the ring. For example in R' m can be connected to any substitutable site in the ring.

[0058] In this application, when the same substituent appears multiple times, it can be independently selected from different groups. For example, if the above general formula contains m R's, each R can be independently selected from different groups.

[0059] In this application, "their combinations", "any combination thereof", "any combination mode thereof", etc. include all suitable combination modes of any two or more of the listed items.

[0060] N-type inorganic semiconductor particles are considered to be one of the most popular materials for preparing the electron transport layer of efficient optoelectronic devices due to their high electron mobility and hole blocking properties. However, due to the large number of surface defect states of N-type inorganic semiconductor particles, when directly contacting with the light-emitting layer, such as the quantum dot layer, exciton quenching is likely to occur at the interface, thus affecting the efficiency of the device.

[0061] The technical solution of this application is as follows:

[0062] In a first aspect, an embodiment of this application provides a composite material, including N-type inorganic semiconductor particles and succinimide maleimide acid ester compounds. The succinimide maleimide acid ester compound is coordinately connected to the N-type inorganic semiconductor particles.

[0063] The succinimide maleimide acid ester compound has the structural formula shown in formula (I):

[0064]

[0065] Wherein, m and n are each independently 1 or 2;

[0066] L is a linking group and can be selected from a single bond, -(CH2) that is unsubstituted or substituted by a first substituent n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2)n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1 to 20, and the first substituent includes halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 20 alkyl, C1-C 20 alkoxy, C1-C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, or one or more of them;

[0067] Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto, cyano; C1-C which is unsubstituted or substituted by a second substituent 30 alkyl, C3-C 30 cycloalkyl, C1-C 20 alkoxy, aryl having 5 to 60 ring atoms, heteroaryl having 5 to 60 ring atoms, aryloxy having 5 to 60 ring atoms, heteroaryloxy having 5 to 60 ring atoms, or a combination of one or more of them, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto, cyano, C1-C 10 alkyl, C1-C 10 alkoxy, or one or more of them.

[0068] The composite material described in this application includes N-type inorganic semiconductor particles and succinimidyl maleimide acid ester compounds connected to the surface of the N-type inorganic semiconductor particles. The succinimidyl maleimide acid ester compounds have hydrophobic alkyl chains and multiple active sites, such as hydroxyl, carboxyl, carbonyl, etc. These active sites are conducive to forming strong coordination between the carbonyl group in the succinimidyl maleimide acid ester compounds and the uncoordinated metal cations on the surface of the N-type inorganic semiconductor particles, thereby passivating the surface defects of the N-type inorganic semiconductor particles and enhancing the stability of the N-type inorganic semiconductor particles. In addition, when using the composite material to prepare a thin film laminated with other film layers (such as a light-emitting layer), on the one hand, the succinimidyl maleimide acid ester compounds can passivate the defects on the surface of the film layer, and on the other hand, the succinimidyl maleimide acid ester compounds can also act as an interface adhesive to enhance the compatibility between adjacent film layers of the thin film and reduce the defect density at the interface between the film layers.

[0069] In some embodiments, L is selected from a single bond, -(CH2) n1 - which is unsubstituted or substituted by a first substituent, -(CH2) n2 CH=CH(CH2) n3 -、-(CH2)n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 One or more combinations of the following, where n1 to n19 are each independently selected from integers of 1 - 15, and the first substituent includes halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 15 alkyl, C1-C 15 alkoxy, C1-C 15 alkylthio, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthio with 6 to 30 ring atoms, one or more of these.

[0070] Furthermore, in some embodiments, L is selected from a single bond, -(CH2) n1 - which is unsubstituted or substituted by the first substituent, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19One or more combinations of the following, wherein n1 to n19 are each independently selected from integers of 1 - 10, and the first substituent includes halogen, hydroxy, nitro, cyano, isocyano, silyl, C1 - C 10 alkyl, C1 - C 10 alkoxy, C1 - C 10 alkylthio, aryl having 6 to 15 ring atoms, aryloxy having 6 to 15 ring atoms, arylthio having 6 to 30 ring atoms, or one or more of these.

[0071] Furthermore, in some embodiments, L is selected from a single bond, -(CH2) n1 - which is unsubstituted or substituted by the first substituent, -(CH2) n2 CH=CH(CH2) n3 - which is unsubstituted or substituted by the first substituent, -(CH2) n4 C≡C(CH2) n5 - which is unsubstituted or substituted by the first substituent, wherein n1 to n19 are each independently selected from integers of 1 - 10, and the first substituent includes halogen, hydroxy, C1 - C 10 alkyl, C1 - C 10 alkoxy, C1 - C 10 alkylthio, or one or more of these.

[0072] In some embodiments, each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxy, carboxy, nitro, sulfo, aldehyde, mercapto, cyano; C1 - C 20 alkyl which is unsubstituted or substituted by the second substituent, C3 - C 20 cycloalkyl, C1 - C 15 alkoxy, aryl having 5 to 30 ring atoms, heteroaryl having 5 to 30 ring atoms, aryloxy having 5 to 30 ring atoms, heteroaryloxy having 5 to 30 ring atoms, or a combination of one or more of these, wherein the second substituent may be selected from, but is not limited to, halogen, hydroxy, carboxy, nitro, sulfo, aldehyde, mercapto, cyano, C1 - C 10 alkyl, C1 - C 10 alkoxy, or one or more of these.

[0073] Furthermore, in some embodiments, each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxy, carboxy, nitro, sulfo, aldehyde, mercapto, cyano; C1 - C 10 alkyl which is unsubstituted or substituted by the second substituent, C3 - C 10 cycloalkyl, C1 - C 10One or more combinations selected from alkoxy groups, aryl groups having 5 to 15 ring atoms, heteroaryl groups having 5 to 15 ring atoms, aryloxy groups having 5 to 15 ring atoms, and heteroaryloxy groups having 5 to 15 ring atoms, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl groups, C1-C 10 one or more selected from alkoxy groups.

[0074] Further, in some embodiments, each occurrence of R' and R" is independently selected from hydrogen, deuterium, amino group, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group; C1-C which is unsubstituted or substituted by a second substituent 10 alkyl groups, C3-C 10 cycloalkyl groups, C1-C 10 one or more combinations selected from alkoxy groups, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl groups, C1-C 10 one or more selected from alkoxy groups.

[0075] Further, in some embodiments, each occurrence of R' and R" is independently selected from hydrogen, deuterium, amino group, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl groups, C3-C 10 cycloalkyl groups, C1-C 10 one or more combinations selected from alkoxy groups.

[0076] In some specific embodiments, the succinimide maleimide acid ester compounds include, but are not limited to, one or more selected from N-succinimide 6-maleimide nonanoate, N-succinimide 6-maleimide butyrate, N-succinimide 6-maleimide octanoate, N-succinimide 6-maleimide heptanoate, N-succinimide 6-maleimide hexanoate ethyl ester, and N-succinimide 6-maleimide glycolate.

[0077] In some embodiments, in the composite material, the molar ratio of the N-type inorganic semiconductor particles to the succinimide maleimide acid ester compounds is 1:(0.01-0.1), for example, 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1, etc. Within this range, the surface of the N-type inorganic semiconductor particles in the composite material can have fewer defects, and the composite material can have better electron transport and injection properties.

[0078] The N-type inorganic semiconductor particles include, but are not limited to, one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the undoped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the doping elements in the doped metal oxide particles include, but are not limited to, one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS, CuGaS.

[0079] In some embodiments, the average particle size range of the N-type inorganic semiconductor particles is 5-8 nm.

[0080] In a second aspect, the embodiments of the present application further provide a preparation method of a composite material, including:

[0081] Mix the N-type inorganic semiconductor particles, succinimide maleimide acid ester compounds, and a first solvent, so that a strong coordination interaction can be formed between the carbonyl group in the succinimide maleimide acid ester compounds and the uncoordinated metal cations on the surface of the N-type inorganic semiconductor particles to form a composite material and obtain a composite material solution.

[0082] In at least some embodiments, the method of mixing the N-type inorganic semiconductor particles, succinimide maleimide acid ester compounds, and a first solvent is: dissolve the N-type inorganic semiconductor particles in the first solvent to obtain an N-type inorganic semiconductor particle solution, and then add the succinimide maleimide acid ester compounds to the N-type inorganic semiconductor particle solution.

[0083] The N-type inorganic semiconductor particles and the succinimide maleimide acid ester compounds are as described above and will not be elaborated here.

[0084] The molar ratio of the inorganic semiconductor particles to the succinimidyl maleimidate compound is 1:(0.01 - 0.1), for example, 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1, etc.

[0085] The first solvent includes but is not limited to alcohol solvents, and the alcohol solvents include one or more of methanol, ethanol, propanol, ethylene glycol, diethylene glycol, 2 - propanol, glycerol, 1,4 - butanediol, 1,6 - hexanediol.

[0086] The dosage of the first solvent is not limited as long as it can fully dissolve the N - type inorganic semiconductor particles and the succinimidyl maleimidate compound.

[0087] In some embodiments, after mixing the N - type inorganic semiconductor particles, the succinimidyl maleimidate compound and the first solvent, it further includes one or more of heating, stirring, and ultrasonic treatment. This is beneficial for forming a strong coordination interaction between the carbonyl group in the succinimidyl maleimidate compound and the uncoordinated metal cations on the surface of the N - type inorganic semiconductor particles to form a composite material.

[0088] In at least some embodiments, after mixing, it further includes a step of ultrasonic dispersion. The power range of the ultrasonic treatment is 20 - 40 KHz, and the time range is 10 min - 4 h. Within this range, it is beneficial for forming a strong coordination interaction between the carbonyl group in the succinimidyl maleimidate compound and the uncoordinated metal cations on the surface of the N - type inorganic semiconductor particles, and is also beneficial for obtaining a uniformly dispersed composite material dispersion.

[0089] In a second aspect, an embodiment of the present application further provides a film, and the film includes the composite material described above.

[0090] In a third aspect, please refer to Figure 1 , an embodiment of the present application further provides a method for preparing a film, including the following steps:

[0091] Step S11: Mix the N - type inorganic semiconductor particles, the succinimidyl maleimidate compound and the first solvent to form a strong coordination interaction between the carbonyl group in the succinimidyl maleimidate compound and the uncoordinated metal cations on the surface of the N - type inorganic semiconductor particles to form a composite material and obtain a composite material dispersion;

[0092] Step S12: Set the composite material dispersion on a substrate and anneal to obtain a film.

[0093] In the step S11:

[0094] In at least some embodiments, the method of mixing N-type inorganic semiconductor particles, succinimidyl maleimide compounds, and a first solvent is as follows: Dissolve the N-type inorganic semiconductor particles in the first solvent to obtain an N-type inorganic semiconductor particle solution, and then add the succinimidyl maleimide compounds to the N-type inorganic semiconductor particle solution.

[0095] The N-type inorganic semiconductor particles, the succinimidyl maleimide compounds, and the first solvent are as described above and will not be elaborated here.

[0096] The molar ratio of the inorganic semiconductor particles to the succinimidyl maleimide compounds is 1:(0.01 - 0.1), for example, 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1, etc.

[0097] In some embodiments, after mixing, it further includes a step of ultrasonic dispersion. The power range of the ultrasonic wave is 20 - 40 KHz, and the time range is 10 min - 4 h. Within this range, it is beneficial for the carbonyl group in the succinimidyl maleimide compounds to form a strong coordination interaction with the uncoordinated metal cations on the surface of the N-type inorganic semiconductor particles, and it is beneficial to obtain a uniformly dispersed composite material dispersion.

[0098] In step S12:

[0099] The substrate can be a substrate, a release film, or a transfer film known for film formation. The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0100] It can be understood that the substrate can also be a prefabricated optoelectronic device, such as a substrate including a cathode, or a stacked structure including a stacked anode, a hole functional layer, and a light-emitting layer.

[0101] The temperature range of the annealing is 80 - 120 °C, for example, 80 °C, 85 °C, 90 °C, 95 °C, 100 °C, 105 °C, 110 °C, 115 °C, 120 °C, etc., and the time range is 10 - 120 min, for example, 10 min, 50 min, 60 min, 80 min, 100 min, 120 min, etc. Within this temperature and time range, there is a good film-forming effect, which is beneficial for preparing a product with better crystallinity and excellent performance.

[0102] In a fourth aspect, please refer to Figure 2 , an optoelectronic device 100 provided by an embodiment of the present application includes a first electrode 10, an electron transport layer 20, and a second electrode 30 that are stacked in sequence. Among them, the material of the electron transport layer 20 includes the composite material, or the electron transport layer 20 is the thin film described above.

[0103] In some embodiments, the thickness range of the electron transport layer 20 is 25-50 nm. For example, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, etc.

[0104] Please refer to Figures 3 - 4 , in some embodiments, the optoelectronic device 100 further includes a light-emitting layer 40, and the light-emitting layer 40 is located between the first electrode 10 and the electron transport layer 20, or between the second electrode 30 and the electron transport layer 20.

[0105] The material of the electron transport layer 20 of the optoelectronic device 100 described in the present application is the composite material. On the one hand, the succinimide maleimide acid ester compound can passivate the defects on the surface of the film layer. On the other hand, the succinimide maleimide acid ester compound can also be used as an interface adhesive between the electron transport layer 20 and the light-emitting layer 40, enhance the compatibility between the electron transport layer 20 and the light-emitting layer 40, reduce the defect density at the interface between the electron transport layer 20 and the light-emitting layer 40, inhibit non-radiative recombination, improve the stability of the interface, and thus effectively improve the performance such as the stability, efficiency, and lifespan of the optoelectronic device 100, reduce the working voltage of the optoelectronic device 100 under the same current density, and save energy.

[0106] Please refer to Figures 5 - 6 , in some embodiments, the optoelectronic device 100 further includes a hole transport layer 50, and the hole transport layer 50 is located on a side of the light-emitting layer 40 away from the electron transport layer 20.

[0107] Please refer to Figures 7 - 8 , in some embodiments, the optoelectronic device 100 further includes a hole injection layer 60, and the hole injection layer 60 is located on a side of the hole transport layer 50 away from the light-emitting layer 40.

[0108] The first electrode 10 and the second electrode 30 are electrodes known in the art for optoelectronic devices. For example, they can independently include, but are not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The materials of the doped metal oxide electrodes can include, but are not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more conductive material layers, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. Here, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The materials of the elemental metal electrodes can include, but are not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0109] In some embodiments, among the first electrode 10 and the second electrode 30, the electrode away from the electron transport layer 20 is an electrode with a relatively high work function. For example, it can include, but is not limited to, a doped metal oxide electrode with a relatively high work function, an elemental metal electrode with a relatively high work function, and a carbon nanotube electrode. The elemental metal electrode with a relatively high work function can be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0110] In some embodiments, among the first electrode 10 and the second electrode 30, the electrode close to the electron transport layer 20 is an electrode with a relatively low work function. For example, it can include, but is not limited to, an elemental metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The elemental metal electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrodes with a relatively low work function are Au:Mg and Ag:Mg, etc.

[0111] The material of the light-emitting layer 40 may include, but is not limited to, one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0112] The organic light-emitting materials may include, but are not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excited complex) light-emitting materials, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0113] The quantum dot light-emitting materials may include, but are not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0114] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may respectively include, but are not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0115] As an example, the quantum dots of the core-shell structure may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0116] The perovskite semiconductor material may include, but is not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the like, and X is a halogen anion, including Cl - , Br - , I - and one or more of the like. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the like, and X is a halogen anion, including Cl - , Br - , I - and one or more of the like.

[0117] The material of the hole transport layer 50 may also be a material known in the art for hole transport layers. For example, it may be selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylenevinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, one or more of them.

[0118] The material of the hole injection layer 60 may also be a material known in the art for hole injection layers, and may be selected from, but not limited to, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more thereof.

[0119] The thicknesses of the first electrode 10 and the second electrode 30 are each independently 30 to 100 nm.

[0120] The thickness of the light-emitting layer 40 is 20 to 60 nm.

[0121] The thickness of the hole transport layer 50 is 20 to 60 nm.

[0122] The thickness of the hole injection layer 60 is 20 to 60 nm.

[0123] It can be understood that the optoelectronic device 100 may further include some functional layers that are conventionally used in optoelectronic devices and are helpful for improving the performance of optoelectronic devices, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0124] It can be understood that the materials of the respective layers of the optoelectronic device 100 can be adjusted according to the light-emitting requirements of the optoelectronic device 100.

[0125] In some embodiments, the optoelectronic device 100 further includes a substrate, and the substrate is disposed on a side of the first electrode 10 away from the light-emitting layer 40, or the substrate is disposed on a side of the second electrode 30 away from the light-emitting layer 40.

[0126] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0127] It can be understood that the optoelectronic device 100 may be a normal optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device (QLED) or an organic optoelectronic device (OLED).

[0128] The electron transport layer 20 of the optoelectronic device 100 includes black titanium dioxide, thereby having a high luminous efficiency and a long lifespan.

[0129] In a fifth aspect, please refer to Figure 2 and Figure 9 , embodiments of the present application further provide a method for manufacturing an optoelectronic device, including the following steps:

[0130] Step S21: Provide a preform of the optoelectronic device, where the preform of the optoelectronic device includes a first electrode 10;

[0131] Step S22: Provide the composite material, and dispose the composite material on the preform of the optoelectronic device to obtain an electron transport layer 20;

[0132] Step S23: Form a second electrode 30 on the electron transport layer 20 to obtain an optoelectronic device 100.

[0133] Please refer to Figure 3 , in some embodiments, the preform of the optoelectronic device further includes a light-emitting layer 40 disposed on the first electrode 10, and the composite material is disposed on the light-emitting layer 40.

[0134] Please refer to Figure 4 , in some other embodiments, forming the second electrode 30 on the electron transport layer 20 includes: sequentially forming a stacked light-emitting layer 40 and a second electrode 30 on the electron transport layer 20.

[0135] Please refer to Figure 5 , in some embodiments, the preform of the optoelectronic device further includes a hole transport layer 50 and a light-emitting layer 40 that are sequentially stacked on the first electrode 10, and the composite material is disposed on the light-emitting layer 40.

[0136] Please refer to Figure 6 , in some other embodiments, forming the second electrode 30 on the electron transport layer 20 includes: sequentially forming a stacked light-emitting layer 40, a hole transport layer 50, and a second electrode 30 on the electron transport layer 20.

[0137] Please refer to Figure 7 , in some embodiments, the preform of the optoelectronic device further includes a hole injection layer 60, a hole transport layer 50, and a light-emitting layer 40 that are sequentially stacked on the first electrode 10, and the composite material is disposed on the light-emitting layer 40.

[0138] Please refer to Figure 8, in some other embodiments, forming the second electrode 30 on the electron transport layer 20 includes: sequentially forming, on the electron transport layer 20, a stacked light-emitting layer 40, a hole transport layer 50, a hole injection layer 60, and the second electrode 30.

[0139] The methods for forming the second electrode 30, the light-emitting layer 40, the hole transport layer 50, and the hole injection layer 60, and the method for disposing the composite material on the optoelectronic device preform can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. Physical methods include physical coating methods and solution methods. Among them, physical coating methods include: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating, etc.

[0140] It can be understood that when the optoelectronic device 100 further includes functional layers that are conventionally used in optoelectronic devices and are helpful for improving the performance of optoelectronic devices, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may further include the step of preparing the above functional layers by conventional techniques in the art.

[0141] The preparation method of the optoelectronic device described in the present application can prepare an optoelectronic device 100 with better luminous efficiency and longer lifespan.

[0142] In a sixth aspect, the present application further relates to a display device, and the display device includes the optoelectronic device 100.

[0143] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0144] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0145] Composite Material Example 1

[0146] The composite material of this embodiment includes ZnO nanoparticles and N-succinyl-6-maleimidonoic acid ester, and the molar ratio of ZnO nanoparticles to N-succinyl-6-maleimidonoic acid ester is 1:0.05.

[0147] The preparation method of the composite material of this embodiment includes:

[0148] A. Add zinc chloride to DMF (N,N-dimethylformamide) to form a solution with a total concentration of 0.5 M. Dropwise add 0.6 M NaOH ethanol solution at room temperature, continue stirring for 1.5 h to obtain a clear and transparent solution. Precipitate ZnO nanoparticles with acetone (as a precipitant), collect by centrifugation, and then dissolve and disperse with an appropriate amount of ethanol to obtain ZnO ethanol solution;

[0149] B. Add N-succinyl-6-maleimidonoic acid ester to the above ZnO ethanol solution, where the molar ratio of ZnO particles to N-succinyl-6-maleimidonoic acid ester is 1:0.05. Ultrasonically disperse at room temperature for 2 h to form a composite material dispersion liquid and obtain the composite material.

[0150] Composite Material Example 2

[0151] This embodiment is basically the same as Composite Material Example 1, except that in this embodiment, the molar ratio of ZnO nanoparticles to N-succinyl-6-maleimidonoic acid ester is 1:0.01.

[0152] Composite Material Example 3

[0153] This embodiment is basically the same as Composite Material Example 1, except that in this embodiment, the molar ratio of ZnO nanoparticles to N-succinyl-6-maleimidonoic acid ester is 1:0.1.

[0154] Composite Material Example 4

[0155] This embodiment is basically the same as Composite Material Example 1, except that in this embodiment, the molar ratio of ZnO nanoparticles to N-succinyl-6-maleimidonoic acid ester is 1:0.001.

[0156] Composite Material Example 5

[0157] This embodiment is basically the same as Composite Material Example 1, except that in this embodiment, the molar ratio of ZnO nanoparticles to N-succinyl-6-maleimidonoic acid ester is 1:0.02.

[0158] Composite Material Example 6

[0159] This example is basically the same as Composite Material Example 1, except that in this example, N-succinimidyl 6-maleimidobutyrate is used to replace N-succinimidyl 6-maleimidononanoate in Example 1.

[0160] Composite Material Example 7

[0161] This example is basically the same as Composite Material Example 1, except that in this example, N-succinimidyl 6-maleimidooctanoate is used to replace N-succinimidyl 6-maleimidononanoate in Example 1.

[0162] Composite Material Example 8

[0163] This example is basically the same as Composite Material Example 1, except that in this example, N-succinimidyl 6-maleimidoheptanoate is used to replace N-succinimidyl 6-maleimidononanoate in Example 1.

[0164] Composite Material Example 9

[0165] This example is basically the same as Composite Material Example 1, except that in this example, Mg-doped ZnO particles are used to replace ZnO particles in Example 1, where the doping amount of Mg is 10%.

[0166] Composite Material Example 10

[0167] This example is basically the same as Composite Material Example 1, except that in this example, TiO2 particles are used to replace ZnO particles in Example 1.

[0168] Composite Material Example 11

[0169] This example is basically the same as Composite Material Example 1, except that in this example, SnO2 particles are used to replace ZnO particles in Example 1.

[0170] Composite Material Comparative Example 1

[0171] The material of this comparative example is the ZnO particles in Example 1.

[0172] Composite Material Comparative Example 2

[0173] The material of this comparative example is the Mg-doped ZnO particles in Example 9.

[0174] Composite Material Comparative Example 3

[0175] The material of this comparative example is the TiO2 particles in Example 10.

[0176] Composite Material Comparative Example 4

[0177] The material of this comparative example is the SnO2 particles in Example 11.

[0178] Device Example 1

[0179] Provide a glass substrate with an ITO first electrode 10 having a thickness of 100 nm. Clean the ITO conductive glass with a cleaner to initially remove the stains on the surface. Subsequently, ultrasonically clean it in deionized water, isopropyl alcohol, acetone, and deionized water for 20 minutes respectively to remove the impurities on the surface. Finally, dry it with high-purity nitrogen gas.

[0180] In a glove box, spin-coat the TFB material on the first electrode 10 and anneal it at 200 °C for 30 minutes to obtain a hole transport layer 50 with a thickness of 40 nm.

[0181] Spin-coat the CdZnSe quantum dot material on the hole transport layer 50 and anneal it at 100 °C for 30 minutes to obtain a light-emitting layer 40 with a thickness of 30 nm.

[0182] Spin-coat the composite material dispersion of Material Example 1 on the light-emitting layer 40 and anneal it at 80 °C for 30 minutes to obtain an electron transport layer 20 with a thickness of 40 nm.

[0183] Evaporate Ag on the electron transport layer 20 to obtain a cathode with a thickness of 70 nm.

[0184] Package it in an environment where both the oxygen content and the water content are lower than 0.1 ppm to obtain an optoelectronic device 100.

[0185] Device Examples 2 to 11

[0186] Device Examples 2 to 11 are the same as Device Example 1 respectively, except that the composite materials of Material Examples 2 to 11 are used respectively when preparing the electron transport layers of Device Examples 2 to 11.

[0187] Device Comparative Examples 1 to 4

[0188] Device Comparative Examples 1 to 4 are the same as Device Example 1 respectively, except that the materials of Material Comparative Examples 1 to 4 are used respectively when preparing the electron transport layers of Device Comparative Examples 1 to 4.

[0189] Perform external quantum efficiency EQE, maximum brightness L max , lifetime T95@1000 nit and V 50mA / cm -2 tests on the optoelectronic devices of Device Examples 1 to 11 and Device Comparative Examples 1 to 4 respectively. The test results are shown in Table 1.

[0190] Among them, the maximum brightness L maxThe test method for the external quantum efficiency EQE is as follows: Using the Fushida FPD optical property measurement equipment, an efficiency test system built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView to measure parameters such as voltage, current, luminance, and emission spectrum, and obtain the maximum luminance L max , and the external quantum efficiency EQE of the device is obtained through calculation. The specific calculation formula is as follows:

[0191]

[0192] In the formula, ηe is the optical output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, KR is the rate of the radiative process, and KNR is the rate of the non-radiative process.

[0193] The test method for the lifetime T95@1000nit is as follows: In CDA gas, under constant current drive, measure the time it takes for the luminance of the device to decay to a certain proportion of the maximum luminance. The time when the luminance decays to 95% of the maximum luminance is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime test cycle, the device lifetime test is usually carried out by accelerating the device aging at high luminance, and the lifetime at low luminance is obtained by fitting through the decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is:

[0194]

[0195] Among them, T95 L is the lifetime at low luminance, generally taking the lifetime at 1000 nits, T95 H is the lifetime at high luminance, that is, the measured lifetime, L H is the maximum luminance to which the device is accelerated, L L is generally 1000 nits, A is the acceleration factor, taking 1.7. Among them, the constant current is 2 mA.

[0196] V 50mA / cm -2 The test method for is as follows: Using the efficiency test system built by Keithley 2400 and Keithley 6485 to measure parameters such as voltage and current, and taking the voltage when the current density is 50 mA / cm -2 .

[0197] The maximum external quantum efficiency EQE, lifetime T95@1000nit, V 50mA / cm -2 are all carried out at room temperature, and the air humidity is 30 - 60%.

[0198] Table 1:

[0199]

[0200]

[0201] As can be seen from Table 1:

[0202] Compared with the optoelectronic devices of Comparative Example 1, the optoelectronic devices of Examples 1 to 8 have a higher external quantum efficiency, a higher maximum brightness, and a longer lifespan. It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compounds in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interfacial adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, and improving the stability of the interface;

[0203] Compared with the optoelectronic devices of Comparative Example 2, the optoelectronic devices of Example 9 have a higher external quantum efficiency, a higher maximum brightness, and a longer lifespan. It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compounds in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interfacial adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, and improving the stability of the interface;

[0204] Compared with the optoelectronic devices of Comparative Example 3, the optoelectronic devices of Example 10 have a higher external quantum efficiency, a higher maximum brightness, and a longer lifespan. It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compounds in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interfacial adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, and improving the stability of the interface;

[0205] Compared with the optoelectronic device of Comparative Example 4, the optoelectronic device of Example 11 has a higher external quantum efficiency, a higher maximum brightness, and a longer lifespan. It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compound in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interface adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, improving the stability of the interface;

[0206] Compared with the optoelectronic device of Comparative Example 1, the optoelectronic devices of Examples 1 to 8 have a lower voltage at a current density of 50 mA / cm -2 It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compound in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interface adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, improving the stability of the interface, and reducing the operating voltage of the device at the same current density;

[0207] Compared with the optoelectronic device of Comparative Example 2, the optoelectronic device of Example 9 has a lower voltage at a current density of 50 mA / cm -2 It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compound in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interface adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, improving the stability of the interface, and reducing the operating voltage of the device at the same current density;

[0208] Compared with the optoelectronic device of Comparative Example 3, the optoelectronic device of Example 10 has a lower voltage at a current density of 50 mA / cm -2 It can be seen that the composite material of the present application can effectively improve the efficiency, brightness, and lifespan of the device. The reason may be that the succinimide maleimide acid ester compound in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interface adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, improving the stability of the interface, and reducing the operating voltage of the device at the same current density;

[0209] Compared with the optoelectronic device of Comparative Example 4, the voltage of the optoelectronic device of Example 11 is lower when the current density is 50 mA / cm -2 It can be seen that the composite material of the present application can effectively improve the efficiency, brightness and lifespan of the device. The reason may be that the succinimide maleimide acid ester compound in the composite material of the present application can passivate the defects on the surface of the film layer, and can also act as an interface adhesive between the electron transport layer and the light-emitting layer, enhancing the compatibility between the electron transport layer and the light-emitting layer, reducing the defect density at the interface between the electron transport layer and the light-emitting layer, inhibiting non-radiative recombination, enhancing the stability of the interface, and reducing the working voltage of the device at the same current density.

[0210] The technical solutions provided by the embodiments of the present application have been introduced in detail above. Specific examples are used herein to elaborate on the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A composite material, characterized in that, The composite material includes N-type inorganic semiconductor particles and a compound represented by formula (I), wherein the structural formula of the compound of formula (I) is as follows: wherein m and n are each independently 1 or 2; L is a linking group and can be selected from a single bond, -(CH2) which is unsubstituted or substituted by a first substituent n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 -, and -(CH2) n18 COO(CH2) n19 - and one or more combinations of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1-20, and the first substituent includes halogen, hydroxy, nitro, cyano, isocyano, silyl, C1-C 20 alkyl, C1-C 20 alkoxy, C1-C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, one or more of them; Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group; C1-C 30 alkyl, C3-C 30 cycloalkyl, C1-C 20 alkoxy, aryl with 5 to 60 ring atoms, heteroaryl with 5 to 60 ring atoms, aryloxy with 5 to 60 ring atoms, heteroaryloxy with 5 to 60 ring atoms, or a combination of one or more thereof, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl, C1-C 10 alkoxy, or a combination of one or more thereof. Succinimide maleimide acid ester compounds.

2. The composite material according to claim 1, wherein the succinimide maleimide acid ester compound is coordinately connected to the N-type inorganic semiconductor particles; and / or in the composite material, the molar ratio of the N-type inorganic semiconductor particles to the succinimide maleimide acid ester compound is 1:(0.01 - 0.1); and / or the average particle size range of the N-type inorganic semiconductor particles is 5 - 8 nm; and / or the N-type inorganic semiconductor particles include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. Among them, the materials of the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

3. The composite material according to claim 1, wherein L is selected from a single bond, -(CH2) which is unsubstituted or substituted by a first substituent n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 -, and -(CH2) n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1 - 15, and the first substituent includes halogen, hydroxy, nitro, cyano, isocyano, silyl, C1-C 15 alkyl, C1-C 15 alkoxy, C1-C 15 alkylthio, aryl having 6 to 30 ring atoms, aryloxy having 6 to 30 ring atoms, arylthio having 6 to 30 ring atoms, one or more; and / or Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group; C1-C 20 alkyl, C3-C 20 cycloalkyl, C1-C 15 alkoxy, aryl having 5 to 30 ring atoms, heteroaryl having 5 to 30 ring atoms, aryloxy having 5 to 30 ring atoms, heteroaryloxy having 5 to 30 ring atoms, or a combination of one or more thereof, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl, C1-C 10 alkoxy, one or more of them.

4. The composite material according to claim 1, wherein L is selected from a single bond, -(CH2) which is unsubstituted or substituted by a first substituent n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1-10, and the first substituent includes halogen, hydroxy, nitro, cyano, isocyano, silyl, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, aryl having 6 to 15 ring atoms, aryloxy having 6 to 15 ring atoms, arylthio having 6 to 30 ring atoms, or one or more of them; and / or Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group; C1-C 10 alkyl, C3-C 10 cycloalkyl, C1-C 10 alkoxy, aryl having 5 to 15 ring atoms, heteroaryl having 5 to 15 ring atoms, aryloxy having 5 to 15 ring atoms, heteroaryloxy having 5 to 15 ring atoms, or a combination of one or more thereof, wherein the second substituent may be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl, C1-C 10 alkoxy, or one or more thereof.

5. The composite material according to claim 1, wherein L is selected from a single bond, unsubstituted or substituted by a first substituent -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, one or more combinations thereof, wherein n1 to n19 are each independently selected from integers of 1-10, and the first substituent includes halogen, hydroxy, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, one or more of them; and / or Each occurrence of R’ and R” is independently selected from hydrogen, deuterium, amino, halogen, hydroxy, carboxy, nitro, sulfo, aldehyde, mercapto, cyano, C1-C 10 alkyl, C3-C 10 cycloalkyl, C1-C 10 alkoxy, or a combination of one or more thereof.

6. The composite material according to claim 1, wherein the compound represented by formula (I) includes one or more of N-succinimide 6-maleimide nonanoate, N-succinimide 6-maleimide butyrate, N-succinimide 6-maleimide octanoate, N-succinimide 6-maleimide heptanoate, N-succinimide 6-maleimide ethyl hexanoate, N-succinimide 6-maleimide hexanolate.

7. A thin film, characterized in that, The thin film includes the composite material according to any one of claims 1 - 6.

8. An optoelectronic device, comprising a first electrode and a second electrode disposed opposite to each other, and further comprising an electron transport layer located between the first electrode and the second electrode, characterized in that, The material of the electron transport layer includes the composite material according to any one of claims 1 - 6.

9. The optoelectronic device according to claim 8, wherein The first electrode and the second electrode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS. The material of the metal elemental electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or The optoelectronic device further includes a light-emitting layer, which is located between the first electrode and the electron transport layer or between the second electrode and the electron transport layer. The material of the light-emitting layer includes one of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2 + 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl, Br, I; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2)NH3 or [NH3(CH2)NH3], where n≥2, M is a divalent metal cation, including one or more of Pb, Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl, Br, I; and / or - 、Br - 、I - One or more of Cl, Br, I; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2)NH3 or [NH3(CH2)NH3], where n≥2, M is a divalent metal cation, including one or more of Pb, Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl, Br, I; and / or n-2 NH3 + or [NH3(CH2)NH3 n NH3] 2+ where n≥2, M is a divalent metal cation, including one or more of Pb, Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl, Br, I; and / or 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of Pb, Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl, Br, I; and / or - 、Br - 、I - One or more of Cl, Br, I; and / or The optoelectronic device further includes a hole transport layer located on a side of the light-emitting layer away from the electron transport layer, and the material of the hole transport layer includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbiphenylamine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The optoelectronic device further includes a hole injection layer located on a side of the light-emitting layer away from the electron transport layer, and the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

10. A display device, characterized in that, An optoelectronic device according to any one of claims 8 to 9.

Images