An apparatus and method for refractory metal isotope production

Abstract

The application relates to a device and a method for refractory metal isotope production. A high-temperature induction furnace comprises a tantalum crucible, a shielding layer and an induction coil, refractory metal solids are filled in the tantalum crucible, alternating current is passed through the induction coil to heat the refractory metal solids in the tantalum crucible and generate refractory metal vapor; a Bernas ion source comprises a Bernas ion source arc chamber, the refractory metal vapor is ionized after entering the Bernas ion source to generate refractory metal ions; a metal vapor gas inlet channel comprises a tantalum crucible furnace cover opening, a high-temperature induction furnace cover opening and a Bernas ion source arc chamber gas inlet, the refractory metal vapor is introduced into the Bernas ion source through the metal vapor gas inlet channel, and the refractory metal ions are introduced out of the Bernas ion source through a Bernas ion source ion beam flow outlet hole; and the refractory metal ions are separated by means of an electromagnetic isotope separator to obtain refractory metal isotopes. The application makes up for the deficiency of isotope separation technology in the field of refractory metal isotope production and improves the production efficiency of refractory metal isotopes.

Description

Technical Field

[0001] This application relates to the production of refractory metal isotopes / ions, and more particularly to an apparatus and method for the production of refractory metal isotopes. Background Technology

[0002] Refractory metal isotopes (such as calcium-40, titanium-48, and chromium-52) are irreplaceable in strategic fields such as nuclear energy, aerospace, and superconductivity. Due to the properties of refractory metals, conventional chemical separation methods are insufficient for their effective extraction. Currently, electromagnetic separation is widely used to obtain high-purity refractory metal isotopes. In electromagnetic isotope separator systems, the ion source is the core component, and its performance directly determines the separation efficiency and yield of the target isotope. Existing technologies often employ plasma-type ion sources to convert the target element into an ionic state, thereby enabling precise isotope separation using an electromagnetic separator. Among these, the Bernas ion source stands out for its ability to generate a powerful ion beam, significantly improving the isotope yield of electromagnetic separators.

[0003] The core challenge in the ionization process of refractory metal isotopes lies in how to efficiently inject the target element into the high-temperature plasma region. This is because refractory metals typically do not exist in gaseous compound form, making it impossible to achieve ionization using conventional gaseous compound injection methods.

[0004] Currently, there are two main methods for introducing solid refractory metal isotopes into the plasma region and completing their ionization: physical sputtering and metal furnace sputtering.

[0005] Physical sputtering uses argon ions or other gases to sputter solid elements or compounds into tiny particles, which are then introduced into an arc chamber discharge space and further ionized into ions, ultimately obtaining an ion beam of solid elements. However, this method has many drawbacks, such as extremely low production efficiency, weak beam intensity, short lifespan of the ion source, and a limited amount of solid sample that can be carried at one time, which greatly restricts the continuous use of the sample.

[0006] The systematic drawbacks of physical sputtering include:

[0007] Low ion yield;

[0008] Short equipment lifespan;

[0009] There is a serious waste of raw materials.

[0010] The metal furnace method, also known as the crucible method, works by heating a solid material to generate vapor, which is then injected into the ion source arc chamber via an inlet pipe. Currently, most common metal furnaces are low-temperature furnaces (resistance furnaces). However, due to the inherent limitations of resistance heating, low-temperature furnaces are only suitable for certain metals with relatively low melting points. For refractory metals, they cannot generate sufficient vapor. Furthermore, relying on inlet pipes to inject gas is inefficient and fails to produce high-intensity ion beams, far from meeting the practical needs of large-scale production of refractory metal isotopes.

[0011] The systematic drawbacks of resistance heating metal furnace methods include:

[0012] Steam transport losses;

[0013] Continuous operation obstacles.

[0014] To effectively overcome the aforementioned challenges, this application innovatively proposes a technical solution that combines a high-temperature induction furnace with a Bernas ion source to generate refractory metal ions. Simultaneously, by optimizing the design of the metal vapor inlet channel, the efficiency of metal vapor transmission is improved, thereby increasing the yield of refractory metal ions. Furthermore, refractory metal isotopes are successfully obtained using electromagnetic separation technology, thus providing a completely new solution and technical path for the development of this field. Summary of the Invention

[0015] To address the aforementioned issues, the purpose of this application is to meet the production needs of high-purity refractory metal isotopes by proposing a novel apparatus and method for the production of refractory metal isotopes.

[0016] To achieve the above objectives, this application adopts the following technical solution:

[0017] An apparatus for producing refractory metal isotopes includes a high-temperature induction furnace and a Bernas ion source. The high-temperature induction furnace includes a tantalum crucible, a shielding layer, and an induction coil. A refractory metal solid is filled inside the tantalum crucible. An alternating current is passed through the induction coil to heat the refractory metal solid inside the tantalum crucible, generating refractory metal vapor. The Bernas ion source includes a Bernas ion source arc chamber. After the refractory metal vapor enters the Bernas ion source, it undergoes an ionization reaction to generate refractory metal ions. The apparatus is characterized by:

[0018] A metal vapor inlet channel is provided between the high-temperature induction furnace and the Bernas ion source. The metal vapor inlet channel includes the opening of the tantalum crucible furnace cover, the opening of the high-temperature induction furnace cover, and the inlet of the Bernas ion source arc chamber arranged in sequence. Refractory metal vapor is introduced into the Bernas ion source through the metal vapor inlet channel, and refractory metal ions are extracted through the ion beam extraction hole of the Bernas ion source.

[0019] Preferably, the high-temperature induction furnace adopts a multi-layer shielding structure, which is suitable for working environments with high temperature and strong magnetic field.

[0020] Preferably, the multi-layer shielding structure includes a shielding layer made of ZrO2 ceramic material.

[0021] Preferably, the shielding layer includes an inner shielding layer, an outer shielding layer, and a bottom shielding layer, wherein the bottom shielding layer includes a bottom shielding layer opening.

[0022] Preferably, the tantalum crucible furnace cover opening, the bottom shielding layer opening, the high-temperature induction furnace cover opening, and the Bernas ion source arc chamber inlet are arranged sequentially, with their radii increasing sequentially, together forming a funnel-shaped gas channel to improve gas intake efficiency.

[0023] Preferably, the tantalum crucible furnace lid has an upper semi-circular opening, and the refractory metal solid is filled in the lower half of the crucible. The vapor is injected into the Bernas ion source arc chamber through the upper semi-circular opening of the furnace mouth combined with the funnel-shaped gas channel, effectively avoiding the problem of blockage of the gas inlet pipe.

[0024] Preferably, the tantalum crucible is placed horizontally. When filling the tantalum crucible with refractory metal solid, the amount of material is less than half of the maximum capacity of the crucible. The refractory metal solid is loaded into the tantalum crucible filling area in the lower half of the tantalum crucible, and the tantalum crucible empty area in the upper half of the tantalum crucible is left empty. The refractory metal solid is confined in the tantalum crucible filling area by the tantalum crucible lid. The refractory metal vapor evaporated upward is injected into the Bernas ion source arc chamber through the opening of the tantalum crucible lid.

[0025] The inlet of the Bernas ion source arc chamber is located at the center of the side wall of the Bernas ion source arc chamber, opposite to the Bernas ion source ion beam extraction hole.

[0026] Preferably, the end face of the high-temperature induction furnace is tightly connected to the side wall of the Bernas ion source, eliminating the need for an extra gas inlet pipe.

[0027] Preferably, the induction coil is tightly wound between the inner and outer shielding layers, and the induction coil is double-hollow with water flowing through its interior.

[0028] A method for producing refractory metal isotopes includes:

[0029] A refractory metal solid is loaded into a tantalum crucible;

[0030] An alternating current is passed through the induction coil to heat the refractory metal solid inside the tantalum crucible, generating refractory metal vapor;

[0031] Metal vapor is injected into the Bernas ion source arc chamber through a metal vapor inlet channel consisting of a semi-circular perforated tantalum crucible furnace lid opening, a bottom shielding layer opening, a high-temperature induction furnace lid opening, and an inlet for the Bernas ion source arc chamber.

[0032] When refractory metal vapor enters the Bernas ion source arc chamber, it undergoes an ionization reaction to generate refractory metal ions.

[0033] Refractory metal ions are extracted through the ion beam extraction port of the Bernas ion source and separated by a subsequent electromagnetic isotope separator to obtain refractory metal isotopes.

[0034] This application has the following advantages due to the adoption of the above technical solution:

[0035] This application addresses the shortcomings of existing isotope separation technologies in the production of refractory metal isotopes. Through an innovative apparatus and method for producing refractory metal isotopes, it enables the stable production of high-current refractory metal isotope ions, providing a high-quality ion source for electromagnetic isotope separation and significantly improving the efficiency and purity of refractory metal isotope acquisition. As an ion source apparatus and method capable of generating refractory metal ions, it is applicable to the generation of ions from most refractory elements and can therefore also be applied to ion implantation, ion sputtering, and material modification. Attached Figure Description

[0036] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Throughout the drawings, the same reference numerals denote the same parts.

[0037] In the attached diagram:

[0038] Figure 1 This is a schematic diagram of an apparatus for producing refractory metal isotopes according to an embodiment of this application;

[0039] Figure 2 This is a cross-sectional view of an apparatus for producing refractory metal isotopes according to an embodiment of this application;

[0040] Figure 3 This is a schematic diagram of the connection structure between a high-temperature induction furnace and a Bernas ion source in an apparatus for producing refractory metal isotopes according to an embodiment of this application.

[0041] Figure 4 This is a cross-sectional schematic diagram of the high-temperature induction furnace structure according to an embodiment of this application;

[0042] Figure 5A schematic diagram of a method for producing refractory metal isotopes according to an embodiment of this application.

[0043] The markings in the attached diagram are as follows:

[0044] Bernas ion source 1;

[0045] High-temperature induction furnace 2;

[0046] Electromagnetic isotope separator 3;

[0047] Metal vapor inlet channel 4;

[0048] Ion beam extraction system 5;

[0049] Isotope collector 6;

[0050] AC power supply 7;

[0051] Insulating ceramics 8;

[0052] Fixed channel 9 for high-temperature induction furnace;

[0053] 10 tantalum crucibles;

[0054] 11 openings in the tantalum crucible furnace lid;

[0055] Bernas ion source arc chamber 12;

[0056] Inlet 13 of the Bernas ion source arc chamber;

[0057] Bernas ion source ion beam extraction hole 14;

[0058] Sealing flange 15;

[0059] Induction coil 16;

[0060] Bottom shielding layer 18;

[0061] Internal shielding layer 19;

[0062] External shielding layer 20;

[0063] Bottom shielding layer opening 21;

[0064] High-temperature induction furnace cover opening 22;

[0065] 23. Grooves are cut into the side wall of the arc chamber of the Bernas ion source.

[0066] High-temperature induction furnace cover 24;

[0067] tantalum crucible filling area 25;

[0068] Empty area 26 in tantalum crucible;

[0069] 27. Tantalum crucible furnace lid. Detailed Implementation

[0070] Exemplary embodiments of this application will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of this application are shown in the drawings, it should be understood that this application may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of this application and to fully convey the scope of this application to those skilled in the art. In the following, although examples of this disclosure will be described in detail with reference to the accompanying drawings, it should be noted that the examples are not limited thereto.

[0071] The following detailed embodiments are provided to aid the reader in gaining a comprehensive understanding of the methods, apparatus, and / or systems described herein. However, various changes, modifications, and equivalents to the methods, apparatus, and / or systems described herein will become apparent upon understanding this disclosure. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein, except for operations that must occur in a specific order, as will become apparent upon understanding this disclosure. Furthermore, for clarity and brevity, descriptions of features well-known in the art may be omitted.

[0072] The features described herein may be implemented in different forms and should not be construed as being limited to the examples described herein. Rather, the examples described herein are provided merely to illustrate some of the many possible ways in which the methods, apparatuses, and / or systems described herein will become apparent upon understanding this disclosure.

[0073] Throughout this specification, when an element is described as being "on," "connected to," or "attached to" another element, the element may be directly "on," directly "connected to," or directly "attached to" the other element, or there may be one or more other elements between the element and the other element. Conversely, when an element is described as being "directly on," "directly connected to," or "directly attached to" another element, there are no other elements between the element and the other element.

[0074] As used herein, the term “and / or” includes any one of the associated listed items and any combination of any two or more items; similarly, “at least one” includes any one of the associated listed items and any combination of any two or more items.

[0075] Although terms such as “first,” “second,” and “third” may be used herein to describe various components, parts, regions, layers, or sections, these components, parts, regions, layers, or sections are not limited by these terms. Rather, these terms are used only to distinguish one component, part, region, layer, or section from another. Therefore, without departing from the teachings of the examples described herein, the first component, first part, first region, first layer, or first section mentioned in these examples may also be referred to as a second component, second part, second region, second layer, or second section.

[0076] Spatial relative terms such as “above,” “above,” “below,” and “below” may be used herein for descriptive convenience to describe the relationship of one element relative to another, as shown in the accompanying drawings. In addition to covering the orientation depicted in the drawings, these spatial relative terms are intended to also cover different orientations of the device in use or operation. For example, if the device in the drawings is flipped, an element described as being “above” or “above” another element would be located “below” or “below” that other element. Thus, depending on the spatial orientation of the device, the term “above” covers both orientations of “above” and “below”. The device may also be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relative terms used herein should be interpreted accordingly.

[0077] The terminology used herein is for the purpose of describing various examples only and is not intended to limit this disclosure. Unless the context clearly indicates otherwise, the terms “a,” “an,” and “the” are intended to include the plural form as well. The terms “comprising,” “including,” and “having” indicate the presence of the stated features, numbers, operations, components, elements, and / or combinations thereof, but do not preclude the presence or addition of one or more other features, numbers, operations, components, elements, and / or combinations thereof.

[0078] Variations in the shapes shown in the figures may occur due to manufacturing techniques and / or tolerances. Therefore, the examples described herein are not limited to the specific shapes shown in the figures, but include shape variations that may occur during manufacturing.

[0079] It should be noted that in this document, the term "may" is used relative to examples, such as regarding what an example may include or implement, meaning that there exists at least one example that includes or implements such a feature, but not all examples are limited to this.

[0080] The features of the examples described herein can be combined in various ways that will become apparent upon understanding this disclosure. Furthermore, although the examples described herein have multiple configurations, other configurations that will become apparent upon understanding this disclosure are also possible.

[0081] To address the demand for the production of high-purity refractory metal isotopes, this application discloses an apparatus and method for producing refractory metal isotopes. The apparatus comprises a high-temperature induction furnace, a metal vapor inlet channel, and a Bernas ion source. The high-temperature induction furnace consists of a tantalum crucible, a ZrO2 ceramic shielding layer, and an induction coil; the metal vapor inlet channel includes an opening in the tantalum crucible lid, an opening in the bottom shielding layer, an opening in the high-temperature induction furnace lid, and an inlet to the Bernas ion source arc chamber; the Bernas ion source includes the Bernas ion source arc chamber and related structures.

[0082] This application innovatively combines induction high-temperature technology with Bernas ion source to generate refractory metal isotope ions, and uses an electromagnetic isotope separator to produce high-purity refractory metal isotopes.

[0083] This application effectively makes up for the shortcomings of isotope separation technology in the field of refractory metal isotope production and significantly improves the production efficiency of refractory metal isotopes.

[0084] This application utilizes a high-temperature induction furnace to generate refractory metal vapor, and injects the refractory metal vapor into a Bernas ion source through a unique air intake structure, thereby generating a high-current refractory metal isotope ion, which is finally separated by an electromagnetic isotope separator to obtain the refractory metal isotope.

[0085] High temperature adaptation and sufficient steam supply

[0086] The high-temperature induction furnace described in this application is specifically designed for the production of refractory metal isotopes and can generate heating temperatures exceeding 2000°C. Such high-temperature conditions can meet the stringent requirements for vapor production of most refractory metal elements. Simultaneously, this high-temperature induction furnace possesses excellent vapor generation capabilities, producing sufficient refractory metal isotope vapors, providing a robust raw material base for subsequent ionization processes.

[0087] Synergistic effect of ion sources

[0088] Bernas ion sources are known for producing high-current, high-purity ions.

[0089] This application ingeniously combines a high-temperature induction furnace with a Bernas ion source, giving full play to the advantages of both, greatly improving the ionization efficiency of refractory metal isotopes, and thus comprehensively improving the overall efficiency of refractory metal isotope production, achieving a key breakthrough in the field of isotope separation.

[0090] Multi-layer shielding to cope with complex working conditions

[0091] Considering the complex working environment of high temperature and magnetic field, the high-temperature induction furnace adopts a carefully designed multi-layer shielding structure. The shielding layer is made of ZrO2 ceramic material, which has the characteristics of high temperature resistance and low thermal conductivity. The shielding layer is divided into an inner shielding layer 19, an outer shielding layer 20, and a bottom shielding layer 18, which effectively copes with high temperature and magnetic field interference and ensures stable operation of the equipment.

[0092] Semi-circular opening furnace mouth design

[0093] The tantalum crucible 10 is generally placed horizontally. The filling refractory metal solid can cause blockage at the crucible opening due to mechanical vibration and condensation caused by temperature differences. Therefore, we designed a tantalum crucible lid 27 with a semi-circular opening, i.e., the opening 11 of the tantalum crucible lid is semi-circular. When filling the tantalum crucible 10 with refractory metal solid, the loading amount is controlled to be less than half of the maximum capacity of the tantalum crucible. The refractory metal solid is loaded into the lower half of the tantalum crucible, while the upper half is left empty. The refractory metal solid is confined within the tantalum crucible filling area 25 by the tantalum crucible lid 27. The gas evaporated upwards from the refractory metal solid can be smoothly injected into the Bernas ion source arc chamber 12 through the opening 11 of the tantalum crucible lid, achieving efficient injection of refractory gold metal vapor. Simultaneously, it effectively prevents solid powder from entering the Bernas ion source arc chamber 12 and causing contamination, improving the stability and reliability of the ion source operation.

[0094] Tight connection and gas guidance

[0095] The end face of the high-temperature induction furnace 2 is tightly connected to the side wall of the Bernas ion source 1, eliminating the need for an extra gas inlet pipe. This effectively prevents metal vapor from condensing and depositing in the gas inlet pipe, thus blocking the gas inlet channel and significantly improving gas transmission efficiency. Simultaneously, the geometric axes of the tantalum crucible furnace lid opening 11, the bottom shielding layer opening 21, the high-temperature induction furnace lid opening 22, and the gas inlet 13 of the Bernas ion source arc chamber are aligned, with their radii increasing sequentially. Together, they form a funnel-shaped gas channel, further optimizing the gas introduction path and greatly improving the transmission efficiency of metal vapor entering the Bernas ion source arc chamber 12.

[0096] Precise layout of air intake position

[0097] In this application, the inlet 13 of the Bernas ion source arc chamber is located at the center of the side wall of the Bernas ion source arc chamber 12, opposite to the Bernas ion source ion beam extraction hole 14. This position is precisely determined based on the plasma density distribution within the Bernas ion source arc chamber, which is beneficial for the efficient generation of refractory metal ions and ensures the efficiency and stability of the ionization process.

[0098] Figure 1This is a schematic diagram of an apparatus for producing refractory metal isotopes according to an embodiment of this application. See also... Figure 1 As shown, this application provides an apparatus for the production of refractory metal isotopes, including a Bernas ion source 1 and a high-temperature induction furnace 2.

[0099] Specifically, an apparatus for producing refractory metal isotopes includes:

[0100] The high-temperature induction furnace 2 includes a tantalum crucible 10, a shielding layer, and an induction coil 16. A refractory metal solid is filled in the tantalum crucible 10. An alternating current is passed through the induction coil 16 to heat the refractory metal solid in the tantalum crucible and generate refractory metal vapor.

[0101] Bernas ion source 1: refractory metal vapor enters Bernas ion source arc chamber 12 and undergoes an ionization reaction to generate refractory metal ions; and

[0102] The metal vapor inlet channel 4 includes a tantalum crucible furnace cover opening 11, a bottom shielding layer opening 21, a high-temperature induction furnace cover opening 22, and an inlet 13 for the Bernas ion source arc chamber. Refractory metal ions are drawn out through the Bernas ion source ion beam extraction hole and separated by an electromagnetic isotope separator 3 to obtain refractory metal isotopes.

[0103] Figure 2 This is a cross-sectional view of an apparatus for producing refractory metal isotopes according to an embodiment of this application. See also... Figure 2 As shown, the high-temperature induction furnace 2 includes a tantalum crucible 10, the interior of which is filled with refractory metal.

[0104] The high-temperature induction furnace 2 adopts a carefully designed multi-layer shielding structure. The shielding layer is made of ZrO2 ceramic material.

[0105] The ZrO2 ceramic shielding layer includes a bottom shielding layer 18, an inner shielding layer 19, and an outer shielding layer 20.

[0106] The induction coil 16 is located between the inner shielding layer 19 and the outer shielding layer 20.

[0107] The tantalum crucible 10 has a tantalum crucible furnace lid opening 11.

[0108] The tantalum crucible furnace cover opening 11, the bottom shielding layer opening 21, the high-temperature induction furnace cover opening 22, and the Bernas ion source arc chamber inlet 13 constitute the metal vapor inlet channel 4.

[0109] Figure 3 This is a schematic diagram of the connection structure between a high-temperature induction furnace and a Bernas ion source in an apparatus for producing refractory metal isotopes according to an embodiment of this application.

[0110] like Figure 3 As shown, the metal vapor inlet channel 4 is formed by the semi-circular perforated tantalum crucible furnace cover opening 11, the bottom shielding layer opening 21, the high-temperature induction furnace cover opening 22, and the Bernas ion source arc chamber inlet 13.

[0111] Figure 3 The filling method of the tantalum crucible, the gas inlet channel, and the connection method of the ion source arc chamber are explained.

[0112] Figure 3 The image shows the Bernas ion source arc chamber sidewall slot 23, the high-temperature induction furnace cover 24, the tantalum crucible filling area 25, the tantalum crucible empty area 26, and the tantalum crucible furnace cover 27.

[0113] like Figure 3 As shown, refractory metal solids can be filled in the tantalum crucible filling zone 25. The refractory metal solids are confined in the tantalum crucible filling zone 25 by the semi-circular tantalum crucible lid 27, and cannot remain in the tantalum crucible empty zone 26. The refractory metal vapors evaporated upwards from the refractory metal solids flow out of the tantalum crucible through the semi-circular tantalum crucible lid opening 11.

[0114] Figure 4 This is a cross-sectional schematic diagram of a high-temperature induction furnace structure according to an embodiment of this application.

[0115] like Figure 4 As shown, the opening 11 of the tantalum crucible furnace lid is a semi-circular opening, and the entire metal vapor inlet channel 4 is set as a funnel-shaped structure.

[0116] A method for producing refractory metal isotopes according to an embodiment of this application has the following specific workflow:

[0117] Loading process: The required refractory metal solid is loaded into the tantalum crucible 10.

[0118] Metal vapor generation: An alternating current is passed through the induction coil 16, and the refractory metal solid in the tantalum crucible 10 is heated by the principle of induction heating, thereby generating refractory metal vapor.

[0119] Metal vapor is injected into the Bernas ion source arc chamber 12: Refractory metal vapor is injected into the Bernas ion source arc chamber 12 through a specific air intake channel in a unique way that combines a horn-shaped gas channel with a tight connection (abandoning the traditional air intake pipe).

[0120] Ionization and Isotope Acquisition: Refractory metal vapor enters the Bernas ion source arc chamber 12 and undergoes an ionization reaction to generate refractory metal ions. These ions are extracted through the Bernas ion source ion beam extraction port 14 and then separated using the subsequent electromagnetic isotope separator 3. High-purity refractory metal isotopes are successfully obtained and collected by the isotope collector 6.

[0121] Figure 5 This is a schematic diagram of a method for producing refractory metal isotopes according to an embodiment of this application.

[0122] like Figure 5 As shown, a method for producing refractory metal isotopes includes:

[0123] S1: Fill the refractory metal solid into the tantalum crucible 10;

[0124] S2: An alternating current is passed through the induction coil 16 to heat the refractory metal solid in the tantalum crucible 10, generating refractory metal vapor;

[0125] S3: The metal vapor is injected into the Bernas ion source arc chamber 12 through the metal vapor inlet channel 4, which is composed of the semi-circular opening of the tantalum crucible furnace cover 11, the bottom shielding layer opening 21, the high temperature induction furnace cover opening 22, and the inlet 13 of the Bernas ion source arc chamber.

[0126] S4: Refractory metal vapor enters Bernas ion source arc chamber 12 and undergoes an ionization reaction to generate refractory metal ions; and

[0127] S5: The refractory metal ions are extracted through the Bernas ion source ion beam extraction hole 14 and separated by the subsequent electromagnetic isotope separator 3 to obtain refractory metal isotopes.

[0128] While specific examples have been shown and described above, it will be apparent upon understanding this disclosure that various changes in form and detail may be made to these examples without departing from the spirit and scope of the claims and their equivalents. The examples described herein are to be understood in a descriptive sense only and not for limiting purposes. The description of features or aspects in each example should be considered applicable to similar features or aspects in other examples. Suitable results may still be achieved if the described techniques are performed in a different order, and / or if components in the described system, architecture, device, or circuit are combined in different ways and / or replaced or supplemented by other components or their equivalents. Therefore, the scope of this disclosure is not limited by the specific embodiments but by the claims and their equivalents, and all variations within the scope of the claims and their equivalents should be understood to be included in this disclosure.

[0129] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. An apparatus for the production of refractory metal isotopes, characterized in that: The system includes a high-temperature induction furnace and a Bernas ion source. The high-temperature induction furnace includes a tantalum crucible, a shielding layer, and an induction coil. A refractory metal solid is filled in the tantalum crucible. An alternating current is passed through the induction coil to heat the refractory metal solid in the tantalum crucible, generating refractory metal vapor. The Bernas ion source includes a Bernas ion source arc chamber. The refractory metal vapor enters the Bernas ion source arc chamber and undergoes an ionization reaction to generate refractory metal ions. A metal vapor inlet channel is provided between the high-temperature induction furnace and the Bernas ion source arc chamber. The metal vapor inlet channel includes, in sequence, an opening in the tantalum crucible furnace cover, an opening in the high-temperature induction furnace cover, and an inlet to the Bernas ion source arc chamber. The refractory metal vapor is introduced into the Bernas ion source arc chamber through the metal vapor inlet channel, and the refractory metal ions are extracted through the Bernas ion source ion beam extraction port. The shielding layer includes an inner shielding layer, an outer shielding layer, and a bottom shielding layer, wherein the bottom shielding layer includes a bottom shielding layer opening; The tantalum crucible furnace cover opening, the bottom shielding layer opening, the high-temperature induction furnace cover opening, and the Bernas ion source arc chamber inlet are arranged sequentially, with their radii increasing sequentially, together forming a funnel-shaped gas channel to improve gas intake efficiency. The opening of the tantalum crucible furnace cover is a semi-circular opening shape; The tantalum crucible is placed horizontally. When filling the tantalum crucible with refractory metal solid, the amount of material is less than half of the crucible's maximum capacity. The refractory metal solid is loaded into the tantalum crucible filling area in the lower half of the tantalum crucible, while the tantalum crucible empty area in the upper half of the tantalum crucible is left empty. The refractory metal solid is confined in the tantalum crucible filling area by the tantalum crucible lid. The refractory metal vapor evaporated upwards is injected into the Bernas ion source arc chamber through the opening of the tantalum crucible lid.

2. The apparatus for producing refractory metal isotopes according to claim 1, characterized in that, The high-temperature induction furnace adopts a multi-layer shielding structure, making it suitable for working environments with high temperatures and strong magnetic fields.

3. The apparatus for producing refractory metal isotopes according to claim 2, characterized in that, The multi-layer shielding structure includes a shielding layer made of ZrO2 ceramic material.

4. The apparatus for producing refractory metal isotopes according to claim 1, characterized in that, The end face of the high-temperature induction furnace is tightly connected to the side wall of the Bernas ion source, eliminating the need for an extra gas inlet pipe.

5. The apparatus for producing refractory metal isotopes according to claim 1, characterized in that, The induction coil is tightly wound between inner and outer shielding layers. The induction coil is a double-layered hollow structure, and water flows through the inside of the induction coil.

6. A method for producing refractory metal isotopes using the apparatus described in any one of claims 1 to 5, characterized in that, include: A refractory metal solid is loaded into a tantalum crucible; An alternating current is passed through the induction coil to heat the refractory metal solid inside the tantalum crucible, generating refractory metal vapor; The metal vapor is injected into the Bernas ion source arc chamber through a funnel-shaped metal vapor inlet channel consisting of an upper semi-circular opening in the tantalum crucible furnace lid, a bottom shielding layer opening, a high-temperature induction furnace lid opening, and a Bernas ion source arc chamber inlet. When refractory metal vapor enters the Bernas ion source arc chamber, it undergoes an ionization reaction to generate refractory metal ions. The refractory metal ions are extracted through the ion beam extraction port of the Bernas ion source and separated by a subsequent electromagnetic isotope separator to obtain refractory metal isotopes.

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