Preparation method of spectrum chip and spectrum chip

Abstract

The invention provides a preparation method of a spectrum chip and the spectrum chip. The preparation method of the spectrum chip comprises the steps that a substrate is obtained, the substrate is provided with a body layer, the body layer comprises a photosensitive layer and a circuit layer, and the photosensitive layer comprises photosensitive units; a protective layer is constructed on the side, away from the base, of the body layer; a light filtering layer is constructed on the side, away from the body layer, of the protection layer, the light filtering layer comprises light filtering units, and the light filtering units are in one-to-one correspondence with the light sensing units; and constructing a light gathering layer on one side, deviating from the protective layer, of the light filtering layer. According to the preparation method of the spectrum chip, the process step of constructing the light guide trap at the circuit layer is simplified, the preparation process of the spectrum chip is effectively simplified, and the interlayer adhesion degree of the spectrum chip is improved.

Description

Technical Field

[0001] The present application relates to the technical field of spectral chips, and in particular to a method for preparing a spectral chip and a spectral chip. Background Art

[0002] Spectral chips have the advantages of small size, light weight, low power consumption and fast analysis, so they are widely used in the field of spectral analysis. They can be used in spectral imaging, spectral sensing, chemical analysis, biomedical testing and other fields, providing a new solution for real-time monitoring and rapid analysis.

[0003] When preparing spectral chips, the related technology requires a relatively large number of processes to produce light-guiding trap structures, which results in a relatively complicated preparation process for spectral chips. Summary of the invention

[0004] The embodiments of the present application provide a method for preparing a spectral chip and a spectral chip.

[0005] In a first aspect, an embodiment of the present application provides a method for preparing a spectral chip, comprising:

[0006] Obtaining a substrate, wherein the substrate has a body layer, the body layer includes a photosensitive layer and a circuit layer, and the photosensitive layer includes a photosensitive unit;

[0007] Constructing a protective layer on a side of the main layer away from the substrate;

[0008] A filter layer is constructed on a side of the protective layer away from the main layer, wherein the filter layer includes filter units, and the filter units correspond to the photosensitive units one by one;

[0009] A light-gathering layer is constructed on the side of the filter layer away from the protective layer.

[0010] In one embodiment, the side of the protective layer away from the main layer has a construction area; before the step of constructing the filter layer on the side of the protective layer away from the main layer, the step further includes:

[0011] Locations outside the constructed area are masked.

[0012] In one embodiment, the step of masking the positions outside the constructed area comprises:

[0013] The locations outside the structured area are masked using ytterbium oxide material, diamond material or yttrium oxide material.

[0014] In one embodiment, the step of constructing a filter layer on a side of the protective layer away from the main layer comprises:

[0015] On a side of the protective layer facing away from the body layer, a filter layer is constructed by a dry process.

[0016] In one embodiment, the step of constructing the protective layer on a side of the body layer facing away from the photosensitive layer includes:

[0017] Construct the circuit layer on the photosensitive layer;

[0018] Construct the protective layer on a side of the circuit layer facing away from the photosensitive layer;

[0019] Or,

[0020] Construct the photosensitive layer on the circuit layer;

[0021] Construct the protective layer on a side of the photosensitive layer facing away from the circuit layer;

[0022] Or,

[0023] Construct the protective layer on a side of the photosensitive layer facing away from the substrate and on a side of the circuit layer facing away from the substrate, wherein the circuit layer and the photosensitive layer are arranged on the same layer.

[0024] In a second aspect, an embodiment of the present application provides a multispectral chip, including:

[0025] A body layer, the body layer includes a photosensitive layer and a circuit layer, and the photosensitive layer includes photosensitive units;

[0026] A protective layer, provided on one side of the body layer;

[0027] A filter layer, provided on a side of the protective layer facing away from the body layer, the filter layer includes filter units, and the filter units correspond to the plurality of photosensitive units one by one;

[0028] A condenser layer, provided on a side of the filter layer facing away from the protective layer.

[0029] In one embodiment, the circuit layer is located between the photosensitive layer and the protective layer.

[0030] In one embodiment, a side of the circuit layer facing the photosensitive layer is a continuous flat surface; and / or,

[0031] A side of the circuit layer facing away from the photosensitive layer has a connection surface, the connection surface is connected to the protective layer, and a projection of the connection surface on the photosensitive layer is located within a projection of the filter layer on the photosensitive layer, wherein the connection surface is a continuous flat surface; and / or,

[0032] The circuit layer has no through holes.

[0033] In one embodiment, the spectral chip further includes a protective film, and the protective film is disposed between the photosensitive layer and the circuit layer.

[0034] In one embodiment, the material of the protective film is yttrium oxide or diamond or ytterbium oxide.

[0035] In one embodiment, the area of the side of the protective film facing away from the photosensitive layer is equal to the area of the side of the circuit layer facing the protective film.

[0036] In one embodiment, the orthographic projection of the side of the circuit layer facing the protective film on the photosensitive layer coincides with the orthographic projection of the side of the protective film facing away from the photosensitive layer on the photosensitive layer.

[0037] Advantageous effects of the embodiments of the present application:

[0038] In the embodiments of the present application, first, a substrate with a body layer is obtained, and then a protective layer is directly constructed on the side of the body layer facing away from the substrate. That is, instead of constructing a light guiding trap structure at the circuit layer, a protective layer is directly constructed, and then a filter layer is constructed on the side of the protective layer facing away from the body layer, and the filter units and the photosensitive units are made to correspond one by one. Finally, a condensing layer is constructed on the side of the filter layer facing away from the protective layer to complete the preparation of the spectral chip. That is to say, after the construction of the body layer in the present application, a protective layer can be directly constructed on the body layer, simplifying the process steps of constructing a light guiding trap at the circuit layer, effectively simplifying the preparation process of the spectral chip, and being beneficial to improving the interlayer adhesion of the spectral chip. Description of the Drawings

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other drawings based on these drawings without creative efforts.

[0040] Figure 1 is a schematic structural diagram of a spectral chip in the related art;

[0041] Figure 2 is one of the schematic structural diagrams of the spectral chip provided by the embodiments of the present application;

[0042] Figure 3 is another schematic structural diagram of the spectral chip provided by the embodiments of the present application;

[0043] Figure 4 is a flowchart of the preparation method of the spectral chip provided by the embodiments of the present application.

[0044] Description of the reference numerals:

[0045] 1. Substrate; 2. Photosensitive layer; 3. Circuit layer; 4. Protective layer; 5. Filter layer; 6. Condensing layer; 7. Protective film; 31. Connection surface. Specific embodiments

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device.

[0047] The following will be combined with Figures 1 to 4 Describe the preparation method and the spectral chip of the spectral chip of the present application.

[0048] According to an embodiment of the first aspect of the present application, as Figure 2 and Figure 4 , the preparation method of the spectral chip includes:

[0049] Step 101: Obtain a substrate 1, on which there is a body layer, the body layer includes a photosensitive layer 2 and a circuit layer 3, and the photosensitive layer includes photosensitive units;

[0050] It can be understood that the number of photosensitive units can be one or at least two.

[0051] It can be understood that the number of circuit layers 3 can be one layer or at least two layers. When the number of circuit layers 3 is at least two layers, the at least two circuit layers 3 are stacked in sequence.

[0052] Step 102: Build a protective layer 4 on the side of the body layer facing away from the substrate 1;

[0053] It can be understood that the protective layer 4 can protect the body layer structures such as the circuit layer 3, so that other structures can be built on the body layer without causing damage to the body layer.

[0054] It should be noted that the protective layer can be constructed at all positions on the side of the body layer facing away from the substrate 1 to achieve comprehensive protection of the body layer. When the photosensitive layer 2 and the circuit layer 3 are arranged on the same layer instead of being stacked, since generally only the light entering the photosensitive layer 2 is filtered, that is, the light filtering layer 5 can generally be constructed on the side of the photosensitive layer 2 facing away from the substrate 1. Furthermore, the protective layer 4 can be constructed on the side of the photosensitive layer 2 facing away from the substrate 1, and the protective layer 4 is not constructed on the circuit layer 3.

[0055] Step 103: Construct a light filtering layer 5 on the side of the protective layer 4 facing away from the body layer. The light filtering layer 5 includes light filtering units, and the light filtering units correspond to the photosensitive units one by one.

[0056] It can be understood that the light filtering units are used to filter light so that light of a specific wavelength band is incident on the photosensitive units.

[0057] In some examples, the number of the light filtering units can be one or at least two.

[0058] In some examples, the number of the photosensitive units and the number of the light filtering units are both multiple, and the multiple photosensitive units and the multiple light filtering units correspond to each other one by one.

[0059] Step 104: Construct a light condensing layer 6 on the side of the light filtering layer 5 facing away from the protective layer 4.

[0060] It can be understood that the light condensing layer 6 can play a role in condensing light to improve the photosensitive effect of the photosensitive units.

[0061] According to the preparation method of the spectral chip of the embodiment of the present application, first obtain the substrate 1 with the body layer, and then directly construct the protective layer 4 on the side of the body layer facing away from the substrate, that is, instead of constructing the light guiding trap structure on the circuit layer 3, directly construct the protective layer 4, and then construct the light filtering layer 5 on the side of the protective layer 4 facing away from the body layer, and make the light filtering units and the photosensitive units correspond to each other one by one. Finally, construct the light condensing layer 6 on the side of the light filtering layer 5 facing away from the protective layer 4 to complete the preparation of the spectral chip. That is to say, after the construction of the body layer is completed in the present application, the protective layer 4 can be directly constructed on the body layer, simplifying the process steps of constructing the light guiding trap on the circuit layer 3, effectively simplifying the preparation process of the spectral chip, and being beneficial to improving the interlayer adhesion of the spectral chip.

[0062] It can be understood that in the related art, after the production of the circuit layer 3 is completed, it is necessary to manufacture the light guiding trap at the middle position of the circuit layer 3 through processes such as etching, coating, and filling, and then lay the protective layer 4, and the process is relatively complex. The present application removes the light guiding trap structure. Furthermore, after the construction of the circuit layer 3 is completed, the protective layer 4 can be directly laid on the body layer, omitting the preparation process steps of the light guiding trap, and effectively reducing the process complexity of the spectral chip.

[0063] In some examples, after the circuit layer 3 is constructed on the photosensitive layer 2, the side of the circuit layer 3 facing away from the photosensitive layer 2 is planarized to form a planarization layer on the side of the circuit layer 3 facing away from the photosensitive layer 2, so as to facilitate the construction of the protective layer 4.

[0064] In an embodiment of the present application, the side of the protective layer 4 facing away from the body layer has a construction area; before the step of constructing the light filtering layer 5 on the side of the protective layer 4 facing away from the body layer, it further includes:

[0065] Masking the positions outside the construction area.

[0066] It can be understood that by masking the positions outside the construction area where the light filtering layer 5 needs to be constructed first, the light filtering layer 5 can be accurately laid on the construction area, which is beneficial to strictly maintaining pixel-level alignment between the light filtering unit and the photosensitive unit.

[0067] It can be understood that by masking the non-construction area, it is possible to prevent the light filtering medium material from covering the area that needs wire bonding later, and eliminate the stress concentration phenomenon at the edge of the light filtering layer 5.

[0068] In an embodiment of the present application, the step of masking the positions outside the construction area includes:

[0069] Masking the positions outside the construction area with ytterbium oxide material or diamond material or yttrium oxide material.

[0070] It can be understood that by using ytterbium oxide material or diamond material or yttrium oxide material for masking, that is, the material of the mask is ytterbium oxide material or diamond material or yttrium oxide material, the structure of the mask is stable, the mask is more corrosion-resistant or can resist multiple ion beam bombardments, providing more choices for the manufacturing process, ensuring the protection effect on the non-construction area, and avoiding damage to the non-construction area during the process of constructing the light filtering layer 5.

[0071] Specifically, the step of constructing the light filtering layer 5 on the side of the protective layer 4 facing away from the body layer includes:

[0072] On the side of the protective layer 4 facing away from the body layer, the light filtering layer 5 is constructed by a dry process.

[0073] It can be understood that since the mask is made of ytterbium oxide material or diamond material or yttrium oxide material and has a stable structure, the light filtering layer 5 can be constructed by a dry process without causing damage to the non-construction area.

[0074] In some examples, the step of constructing the protective layer on the side of the body layer facing away from the photosensitive layer includes:

[0075] Constructing the circuit layer on the photosensitive layer;

[0076] Construct the protective layer on the side of the circuit layer facing away from the photosensitive layer.

[0077] In some examples, the step of constructing the protective layer on the side of the body layer facing away from the photosensitive layer includes:

[0078] Construct the photosensitive layer on the circuit layer;

[0079] Construct the protective layer on the side of the photosensitive layer facing away from the circuit layer.

[0080] In some examples, the step of constructing the protective layer on the side of the body layer facing away from the photosensitive layer includes:

[0081] Construct the protective layer on the side of the photosensitive layer facing away from the substrate and on the side of the circuit layer facing away from the substrate, wherein the circuit layer and the photosensitive layer are arranged on the same layer.

[0082] According to the embodiments of the second aspect of the present application, as Figure 2 , a spectral chip, comprising:

[0083] A body layer, the body layer includes a photosensitive layer 2 and a circuit layer 3, and the photosensitive layer 2 includes photosensitive units;

[0084] A protective layer 4, provided on one side of the body layer;

[0085] A filter layer 5, provided on the side of the protective layer 4 facing away from the body layer, the filter layer 5 includes filter units, and the filter units correspond to a plurality of photosensitive units one by one;

[0086] A condenser layer 6, provided on the side of the filter layer 5 facing away from the protective layer 4.

[0087] It can be understood that the body layer includes a circuit layer 3 and a photosensitive layer 2. The protective layer 4 is directly constructed on one side of the body layer, that is, the light guide trap structure is not constructed on the circuit layer 3, but the protective layer 4 is directly constructed, and then the filter layer 5 is constructed on the side of the protective layer 4 facing away from the body layer, and the filter units and the photosensitive units are made to correspond one by one. Finally, the condenser layer 6 is constructed on the side of the filter layer 5 facing away from the protective layer 4. That is to say, the spectral chip of the present application omits the light guide trap structure. Therefore, when preparing the spectral chip, the protective layer 4 can be directly constructed on the body layer, simplifying the process steps of constructing the light guide trap at the circuit layer 3, which is beneficial to simplifying the preparation process of the spectral chip and improving the interlayer adhesion of the spectral chip.

[0088] In some embodiments, as Figure 3 , the photosensitive layer 2 is located between the circuit layer 3 and the protective layer 4.

[0089] It can be understood that the photosensitive layer 2 is directly constructed on the circuit layer 3, that is, the light guide trap structure is not constructed at the circuit layer 3, and the structure of the light guide trap is omitted. Furthermore, when preparing the spectral chip, the photosensitive layer 2 can be directly constructed on the circuit layer 3, simplifying the process steps of constructing the light guide trap at the circuit layer 3, which is beneficial to simplifying the preparation process of the spectral chip and improving the interlayer adhesion of the spectral chip.

[0090] In some embodiments, the circuit layer 3 and the photosensitive layer 2 are arranged on the same layer, and the protective layer is provided on both the side of the circuit layer facing the filter layer and the side of the photosensitive layer facing the filter layer.

[0091] It can be understood that the protective layer 4 is directly constructed on the circuit layer 3, that is, the light guide trap structure is not constructed at the circuit layer 3, and the structure of the light guide trap is omitted. Furthermore, when preparing the spectral chip, the protective layer 4 can be directly constructed on the circuit layer 3, simplifying the process steps of constructing the light guide trap at the circuit layer 3, which is beneficial to simplifying the preparation process of the spectral chip and improving the interlayer adhesion of the spectral chip.

[0092] In some embodiments, the circuit layer 3 is located between the photosensitive layer 2 and the protective layer 4.

[0093] It can be understood that by constructing the circuit layer 3 on the photosensitive layer 2 and then directly constructing the protective layer 4 on the side of the circuit layer 3 facing away from the photosensitive layer 2, that is, the light guide trap structure is not constructed at the circuit layer 3, but the protective layer 4 is directly constructed, and then the filter layer 5 is constructed on the side of the protective layer 4 facing away from the circuit layer 3, and the filter units and the photosensitive units are made to correspond one by one, and finally the light condensing layer 6 is constructed on the side of the filter layer 5 facing away from the protective layer 4. That is to say, the light guide trap structure is omitted in the spectral chip of the present application. Furthermore, when preparing the spectral chip, the protective layer 4 can be directly constructed on the circuit layer 3, simplifying the process steps of constructing the light guide trap at the circuit layer 3, which is beneficial to simplifying the preparation process of the spectral chip and improving the interlayer adhesion of the spectral chip.

[0094] Specifically, the side of the circuit layer 3 facing the photosensitive layer 2 is a continuous flat surface.

[0095] It can be understood that if the side of the circuit layer 3 facing the photosensitive layer 2 is a continuous flat surface, it means that the circuit layer 3 has no through holes or similar through structures, that is, there is no light guide trap structure at the circuit layer 3. Furthermore, by omitting the light guide trap structure, the structure of the spectral chip is simplified, which is beneficial to simplifying the manufacturing process of the spectral chip.

[0096] It can be understood that in the related art, such as Figure 1, generally, a light guiding trap is arranged at the middle position of the circuit layer 3. To ensure that the light guiding trap can guide the light passing through the light filtering layer 5 to the photosensitive unit, the light guiding trap penetrates through the circuit layer 3, and thus the side of the circuit layer 3 facing the photosensitive layer 2 is a discontinuous surface. However, in this application, the side of the circuit layer 3 facing the photosensitive layer 2 is designed as a continuous and flat surface, thereby canceling the light guiding trap structure, simplifying the structure of the spectral chip, and facilitating the simplification of the manufacturing process of the spectral chip.

[0097] Specifically, as Figure 2 , the side of the circuit layer 3 facing away from the photosensitive layer 2 has a connection surface 31, the connection surface 31 is connected to the protective layer 4, and the orthographic projection of the connection surface 31 on the photosensitive layer 2 is located within the orthographic projection of the light filtering layer 5 on the photosensitive layer 2, where the connection surface 31 is a continuous and flat surface.

[0098] It can be understood that the side of the circuit layer 3 facing away from the photosensitive layer 2 has a connection surface 31, and this connection surface 31 is used to connect to the protective layer 4. At the same time, the orthographic projection of this connection surface 31 on the photosensitive layer 2 is located within the orthographic projection of the light filtering layer 5 on the photosensitive layer 2, that is, this connection surface 31 is directly below the light filtering layer 5.

[0099] Designing the connection surface 31 as a continuous and flat surface indicates that there are no grooves or through structures formed in the part of the circuit layer 3 directly below the light filtering layer 5, that is, the circuit layer 3 has no light guiding trap structure, simplifying the structure of the spectral chip and facilitating the simplification of the manufacturing process of the spectral chip.

[0100] It can be understood that in the related art, such as Figure 1 , generally, a light guiding trap is arranged at the middle position of the circuit layer 3, so that the light guiding trap can guide the light passing through the light filtering layer 5, and thus the connection surface 31 where the circuit layer 3 is connected to the protective layer 4 is a discontinuous surface. However, in this application, the connection surface 31 where the circuit layer 3 is connected to the protective layer 4 is designed as a continuous and flat surface, thereby canceling the light guiding trap structure, simplifying the structure of the spectral chip, and facilitating the simplification of the manufacturing process of the spectral chip.

[0101] Specifically, the circuit layer 3 has no through holes.

[0102] It can be understood that if there are no through holes in the circuit layer 3, it means that there is no light guiding trap structure in the circuit layer 3. Thus, by omitting the light guiding trap structure, the structure of the spectral chip is simplified, which is conducive to simplifying the manufacturing process of the spectral chip.

[0103] It can be understood that in the related art, such as Figure 1, generally, a light guiding trap is arranged at the middle position of the circuit layer 3. To ensure that the light guiding trap can guide the light passing through the light filtering layer 5 to the photosensitive unit, the light guiding trap penetrates through the circuit layer 3, and thus a through-hole will be formed at the circuit layer 3. However, in this application, the circuit layer 3 is designed without a through-hole, thereby canceling the light guiding trap structure, simplifying the structure of the spectral chip, and facilitating the simplification of the manufacturing process of the spectral chip.

[0104] Specifically, as Figure 2 , the spectral chip further includes a protective film 7, and the protective film 7 is arranged between the photosensitive layer 2 and the circuit layer 3.

[0105] It can be understood that the protective film 7 can protect the photosensitive layer 2 to avoid damage to the photosensitive layer 2 when constructing the circuit layer 3.

[0106] Specifically, the material of the protective film 7 is yttrium oxide or diamond or ytterbium oxide.

[0107] It can be understood that using ytterbium oxide material or diamond material or yttrium oxide material as the protective film 7, that is, the material of the protective film 7 is ytterbium oxide material or diamond material or yttrium oxide material, makes the structure of the protective film 7 stable, makes the protective film 7 more corrosion-resistant or can resist multiple ion beam bombardments, provides more choices for the manufacturing process, ensures the protection effect on the photosensitive layer 2, and can avoid damage to the photosensitive layer 2 during the construction of the circuit layer 3.

[0108] It should be noted that the material of the protective film 7 can also be silicon hydride.

[0109] Specifically, the area of the side of the protective film 7 facing away from the photosensitive layer 2 is equal to the area of the side of the circuit layer 3 facing the protective film 7.

[0110] It can be understood that the protective film 7 covers the photosensitive layer 2, and the side of the protective film 7 facing away from the photosensitive layer 2 is a continuous flat surface. If the area of the side of the protective film 7 facing away from the photosensitive layer 2 is equal to the area of the side of the circuit layer 3 facing the protective film 7, it means that the side of the circuit layer 3 facing the protective film 7 is also a continuous flat surface, indicating that the circuit layer 3 has no through-hole or similar through-structure, that is, there is no light guiding trap structure at the circuit layer 3. Thus, by omitting the light guiding trap structure, the structure of the spectral chip is simplified, which is beneficial to simplifying the manufacturing process of the spectral chip.

[0111] It can be understood that in the related art, such as Figure 1, generally, a light guide trap is arranged at the middle position of the circuit layer 3. To ensure that the light guide trap can guide the light passing through the light filtering layer 5 to the photosensitive unit, the light guide trap penetrates through the circuit layer 3, and thus the side of the circuit layer 3 facing the protective film 7 is a discontinuous surface. However, in this application, by designing the side of the circuit layer 3 facing the protective film 7 as a continuous and flat surface, the light guide trap structure is cancelled, the structure of the spectral chip is simplified, and it is beneficial to simplify the manufacturing process of the spectral chip.

[0112] Specifically, the orthographic projection of the side of the circuit layer 3 facing the protective film 7 on the photosensitive layer 2 coincides with the orthographic projection of the side of the protective film 7 facing away from the photosensitive layer 2 on the photosensitive layer 2.

[0113] It can be understood that the protective film 7 covers the photosensitive layer 2, and the side of the protective film 7 facing away from the photosensitive layer 2 is a continuous and flat surface. If the orthographic projection of the side of the circuit layer 3 facing the protective film 7 on the photosensitive layer 2 coincides with the orthographic projection of the side of the protective film 7 facing away from the photosensitive layer 2 on the photosensitive layer 2, it indicates that the side of the circuit layer 3 facing the protective film 7 is also a continuous and flat surface, indicating that there is no through hole or similar through structure in the circuit layer 3, that is, there is no light guide trap structure at the circuit layer 3. Therefore, by omitting the light guide trap structure, the structure of the spectral chip is simplified, and it is beneficial to simplify the manufacturing process of the spectral chip.

[0114] It can be understood that in the related art, such as Figure 1 , generally, a light guide trap is arranged at the middle position of the circuit layer 3. To ensure that the light guide trap can guide the light passing through the light filtering layer 5 to the photosensitive unit, the light guide trap penetrates through the circuit layer 3, and thus the side of the circuit layer 3 facing the protective film 7 is a discontinuous surface, and the orthographic projection of the side of the circuit layer 3 facing the protective film 7 on the photosensitive layer 2 can only partially coincide with the orthographic projection of the side of the protective film 7 facing away from the photosensitive layer 2 on the photosensitive layer 2. However, in this application, by designing the orthographic projection of the side of the circuit layer 3 facing the protective film 7 on the photosensitive layer 2 to coincide with the orthographic projection of the side of the protective film 7 facing away from the photosensitive layer 2 on the photosensitive layer 2, the side of the circuit layer 3 facing the protective film 7 is made into a continuous and flat surface, and thus the light guide trap structure is cancelled, the structure of the spectral chip is simplified, and it is beneficial to simplify the manufacturing process of the spectral chip.

[0115] In some embodiments, the material of the protective layer 4 is yttrium oxide or diamond or ytterbium oxide.

[0116] It can be understood that using ytterbium oxide material or diamond material or yttrium oxide material as the protective layer 4, that is, the material of the protective layer 4 is ytterbium oxide material or diamond material or yttrium oxide material, makes the structure of the protective layer 4 stable, makes the protective layer 4 more corrosion-resistant or can resist multiple ion beam bombardments, provides more choices for the manufacturing process, ensures the protection effect on the circuit layer 3, and can avoid damaging the circuit layer 3 during the process of constructing the light filtering layer 5.

[0117] In some embodiments, the spectral chip includes:

[0118] A photosensitive unit for obtaining light of different bands to obtain spectral information of each channel, wherein different channels correspond to spectral information of different bands;

[0119] A filter unit disposed on one side of the photosensitive unit, and the filter unit is located on the light-sensing path of the photosensitive unit. The filter unit filters the light entering the photosensitive unit and allows at least two lights of different bands to pass through.

[0120] According to the spectral chip of the embodiments of the present application, the photosensitive unit can obtain spectral information of different bands corresponding to different channels for spectral imaging. The photosensitive unit and the filter unit are in one-to-one correspondence. The filter unit can filter the light entering the photosensitive unit, so that light of more than two specific bands can pass through the filter unit and enter the photosensitive unit, enabling the photosensitive unit corresponding to one pixel to obtain spectral information of more than two different bands. That is to say, by setting the filter unit to be able to transmit light of at least two different bands, the present application enables a spectral chip to simultaneously obtain spectral information of at least two different bands, reduces the physical interval between the two bands, improves the resolution, and is not prone to losing spectral information, which is beneficial to improving the later imaging effect.

[0121] It can be understood that in the related art, the implementation structure of a traditional RGB sensor is that each PD photosensitive unit plus 1 corresponding filter unit forms 1 pixel. To obtain spectral information of three bands of red, yellow, and blue, at least 3 pixel units are required. Due to the sensitivity of the human eye to green, two green filter units are distributed among every 4 pixels. If more bands are to be obtained, such as 12 optical band information, at least 12 pixels are required. No matter how they are arranged, it will cause too large a physical interval between pixels of the same band or adjacent bands, resulting in too low a resolution and loss of spectral information.

[0122] For example, in a 12-band spectral arrangement, 12 different optical bands are arranged in a 4x3 format. Then, two adjacent identical channels (such as B12) are spaced 3 other band pixel units horizontally and 2 other band pixel units vertically. This easily causes excessive loss of spectral information of the same band and poor later imaging effect.

[0123] In this application, by setting the filter unit to be able to transmit light of at least two different bands, a pixel unit can simultaneously obtain spectral information of multiple bands. For example, the filter unit can transmit 12 bands, that is, a pixel unit can obtain 12-band spectral information. Furthermore, there are no pixel units spaced between two adjacent identical channels horizontally or vertically, effectively reducing the physical distance between two bands, improving the resolution, and not easily losing spectral information, which is beneficial to improving the later imaging effect.

[0124] It can be understood that in the related art, 12 channels need to correspond to 12 pixels. That is, to implement the minimum photosensitive unit for n bands, n pixel points are required. When the value of n is too large, it is easy to cause a decrease in spatial resolution. In this application, multiple channels (such as 12 channels) are integrated into one pixel. That is, when implementing the minimum photosensitive unit for multiple bands, only 1 pixel point may be required, which is beneficial to improving the spatial resolution.

[0125] In some embodiments, the filter unit includes at least one first filter film and at least one second filter film. The refractive index of the first filter film is greater than that of the second filter film, and the first filter film and the second filter film are alternately arranged.

[0126] It can be understood that by alternately stacking the first filter film and the second filter film with different refractive indexes to form a filter unit, the filter unit can transmit light of at least two different bands, realizing obtaining light of multiple different bands using the same filter unit. That is, the spectral splitting structures of multiple bands are the same. Furthermore, when preparing the filter unit of this application, there is no need to perform repeated etching, cleaning and other steps, the process is simple, and the cost is low.

[0127] In some examples, this application adopts the multi-layer film technology, which is composed of alternately stacking a high-refractive-index filter film (such as titanium oxide, specifically titanium oxide or titanium dioxide) and a low-refractive-index filter film (such as SiO2). By combining their different thicknesses, the light bands of at least 1 narrowband transmission peak pass through the filter unit, realizing that a single filter unit transmits the light bands of multiple independent narrowband transmission peaks, such as 2, 4, 7, etc. For example, 4 independent narrowband transmission peak bands with central wavelengths of 450 nm, 550 nm, 650 nm, and 750 nm are realized through 1 filter unit.

[0128] It should be noted that according to the functional requirements and index parameter requirements, by adjusting the materials used for the first filter film and the second filter film, the arrangement of the alternating stacking of high and low refractive index materials, and the thickness combination, the wavelength range of the transmitted narrowband transmission peak can be made to be the central wavelength ±(1nm - 100nm), and the full width at half maximum FWHM ≤(1nm - 100nm). For example, if the central wavelength of the transmitted light is 550nm, the actual wavelength range of the transmitted narrowband transmission peak is 550nm ±(1nm - 100nm); if the central wavelength is 450nm, the narrowband transmission peak wavelength range is 450nm ±(1nm - 100nm). The crosstalk suppression between multiple narrowband transmission peaks transmitted through the same filter unit is low enough, such as the adjacent band isolation ≥ 30dB, so that the optical channel data corresponding to the quantum response has sufficient independence.

[0129] In some examples, the materials of the first filter film and the second filter film can be any one of aluminum (Al), chromium (Cr), gold (Au), silver (Ag), silicon (Si), germanium (Ge), aluminum oxide (Al2O3), cerium oxide (CeO2), hafnium dioxide (HfO2), indium tin oxide (ITO), magnesium oxide (MgO), niobium pentoxide (Nb2O5), silicon monoxide (SiO), silicon dioxide (SiO2), titanium dioxide (TiO2), titanium trioxide (Ti3O5), tantalum pentoxide (Ta2O5), yttrium oxide (Y2O3), zinc oxide (ZnO), zirconium dioxide (ZrO2), aluminum fluoride (AlF3), magnesium fluoride (MgF2), calcium fluoride (CaF2), ytterbium fluoride (YbF3), yttrium fluoride (YF3), zinc sulfide (ZnS), and zinc selenide (ZnSe).

[0130] Specifically, the thicknesses of different first filter films are different.

[0131] It can be understood that when the number of the first filter films is at least two, by adjusting the thicknesses of different first filter films to make the thicknesses of different first filter films different, the number of light bands that can be transmitted by the filter unit composed of the first filter films can be changed, or the band range of the light rays that can be transmitted by the filter unit can be changed.

[0132] Specifically, the thicknesses of different second filter films are different.

[0133] It can be understood that when the number of the second filter films is at least two, by adjusting the thicknesses of different second filter films to make the thicknesses of different second filter films different, the number of light bands that can be transmitted by the filter unit composed of the second filter films can be changed, or the band range of the light rays that can be transmitted by the filter unit can be changed.

[0134] Specifically, the thicknesses of the first filter film and the second filter film are different.

[0135] It can be understood that by adjusting the thicknesses of the first filter film and the second filter film so that they are different, the number of light wavebands that can pass through the filter unit composed of the first filter film and the second filter film can be changed, or the waveband range of the light rays that can pass through the filter unit can be changed.

[0136] In some examples, the thicknesses of the first filter film and the second filter film can also be the same.

[0137] In some embodiments, the filter unit includes at least two filter regions, and different filter regions can allow light of different wavebands to pass through.

[0138] It can be understood that different filter regions can transmit light rays of different wavebands, so that the filter unit can transmit at least two different wavebands of light rays simultaneously.

[0139] Specifically, the thicknesses of different filter regions are different.

[0140] It can be understood that by making the thicknesses of the filter media in different filter regions different, different filter regions can transmit light rays of different wavebands.

[0141] Specifically, the materials of different filter regions are different.

[0142] It can be understood that by making the materials of the filter media in different filter regions different, different filter regions can transmit light rays of different wavebands.

[0143] According to the embodiments of the third aspect of the present application, the electronic device includes the above-mentioned spectral chip.

[0144] According to the electronic device of the embodiments of the present application, first, a substrate 1 with a body layer is obtained, and then a protective layer 4 is directly constructed on the side of the body layer facing away from the substrate, that is, instead of constructing a light guide trap structure at the circuit layer 3, the protective layer 4 is directly constructed, and then a filter layer 5 is constructed on the side of the protective layer 4 facing away from the body layer, and the filter unit and the photosensitive unit are made to correspond one by one, and finally a condensing layer 6 is constructed on the side of the filter layer 5 facing away from the protective layer 4 to complete the preparation of the spectral chip. That is to say, after the construction of the body layer is completed in the present application, the protective layer 4 can be directly constructed on the body layer, which simplifies the process steps of constructing the light guide trap at the circuit layer 3, effectively simplifies the preparation process of the spectral chip, and is beneficial to improving the interlayer adhesion of the spectral chip, and further is beneficial to simplifying the preparation process of the electronic device and reducing the cost of the electronic device.

[0145] In some embodiments, the electronic device further includes a light guide member, and the light guide member is disposed on the side of the condensing layer 6 facing away from the filter layer 5, and the light guide member is used to guide light to be incident on the condensing layer 6.

[0146] It is understandable that by providing a light guide, the light guide can guide the light, increase the amount of light incident on the light focusing layer 6, and further increase the light incident on the photosensitive layer 2 to improve the photosensitivity efficiency of the photosensitive layer 2.

[0147] It is understandable that the light guide can play the role of a light trap, and even without a light trap structure, the photosensitivity of the spectral chip can be effectively guaranteed. At the same time, the light guide is arranged on the side of the light collecting layer 6 away from the filter layer 5, that is, the light guide is independent of the spectral chip, and the light guide does not increase the manufacturing process of the spectral chip.

[0148] In some examples, the electronic device has a split structure, and the light guide is independent of the spectral chip, thereby avoiding the light guide from increasing the manufacturing process of the spectral chip, thereby ensuring the simplification of the manufacturing process of the spectral chip.

[0149] Specifically, the orthographic projection of the light guide on the circuit layer 3 is located within the orthographic projection of the photosensitive layer 2 on the circuit layer 3 .

[0150] It is understandable that the orthographic projection of the light guide on the circuit layer 3 is located within the orthographic projection of the photosensitive layer 2 on the circuit layer 3 , so that the light guide can effectively increase the light incident on the photosensitive layer 2 and ensure the photosensitivity effect of the photosensitive layer 2 .

[0151] Specifically, the orthographic projection of the photosensitive layer 2 on the circuit layer 3 is located within the orthographic projection of the filter layer 5 on the circuit layer 3 .

[0152] It can be understood that the orthographic projection of the photosensitive layer 2 on the circuit layer 3 is located within the orthographic projection of the filter layer 5 on the circuit layer 3, which ensures that the filter layer 5 can completely filter the light incident on the photosensitive layer 2 and prevent some light from directly incident on the photosensitive layer 2 through the filter layer 5.

[0153] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a spectral chip, characterized in that, Comprising: Obtaining a substrate, on which there is a body layer, the body layer includes a photosensitive layer and a circuit layer, and the photosensitive layer includes photosensitive units; Constructing a protective layer on a side of the body layer facing away from the substrate; Constructing a light filtering layer on a side of the protective layer facing away from the body layer, the light filtering layer includes light filtering units, and the light filtering units correspond to the photosensitive units one by one; Constructing a light condensing layer on a side of the light filtering layer facing away from the protective layer.

2. The method for preparing a spectral chip according to claim 1, characterized in that The side of the protective layer facing away from the body layer has a construction area; before the step of constructing the light filtering layer on the side of the protective layer facing away from the body layer, it further includes: Masking positions outside the construction area.

3. The preparation method of the spectral chip according to claim 2, characterized in that, The step of masking positions outside the construction area includes: Masking positions outside the construction area with ytterbium oxide material or diamond material or yttrium oxide material.

4. The method for preparing the spectral chip according to claim 3, characterized in that, The step of constructing the light filtering layer on the side of the protective layer facing away from the body layer includes: On the side of the protective layer facing away from the body layer, constructing the light filtering layer by a dry process.

5. The preparation method of the spectral chip according to any one of claims 1 to 4, characterized in that, The step of constructing the protective layer on a side of the body layer facing away from the photosensitive layer includes: Constructing the circuit layer on the photosensitive layer; Constructing the protective layer on a side of the circuit layer facing away from the photosensitive layer; Or, Constructing the photosensitive layer on the circuit layer; Constructing the protective layer on a side of the photosensitive layer facing away from the circuit layer; Or, Constructing the protective layer on a side of the photosensitive layer facing away from the substrate and on a side of the circuit layer facing away from the substrate, wherein the circuit layer and the photosensitive layer are arranged in the same layer.

6. A spectral chip, characterized in that, Comprising: A body layer, the body layer includes a photosensitive layer and a circuit layer, and the photosensitive layer includes photosensitive units; A protective layer, provided on one side of the body layer; A light filtering layer, provided on a side of the protective layer facing away from the body layer, the light filtering layer includes light filtering units, and the light filtering units correspond to a plurality of the photosensitive units one by one; A light condensing layer, provided on a side of the light filtering layer facing away from the protective layer.

7. The spectral chip according to claim 6, characterized in that, The circuit layer is located between the photosensitive layer and the protective layer.

8. The spectral chip according to claim 7, wherein The side of the circuit layer facing the photosensitive layer is a continuous flat surface; and / or, The side of the circuit layer facing away from the photosensitive layer has a connection surface, the connection surface is connected to the protective layer, and the orthographic projection of the connection surface on the photosensitive layer is located within the orthographic projection of the light filtering layer on the photosensitive layer, wherein the connection surface is a continuous flat surface; and / or, The circuit layer has no through holes.

9. The spectral chip according to claim 7 or 8, characterized in that, The spectral chip further includes a protective film, and the protective film is provided between the photosensitive layer and the circuit layer.

10. The spectral chip according to claim 7, wherein, The material of the protective film is yttrium oxide or diamond or ytterbium oxide; and / or, The area of the side of the protective film facing away from the photosensitive layer is equal to the area of the side of the circuit layer facing the protective film; And / or, The orthographic projection of the side of the circuit layer facing the protective film on the photosensitive layer coincides with the orthographic projection of the side of the protective film facing away from the photosensitive layer on the photosensitive layer.

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