Mask exposure parameter correction method and system

Abstract

The invention provides a mask exposure parameter correction method and system, and the method comprises the steps: controlling a photoetching machine to execute exposure according to a current exposure parameter, and generating a plurality of repeated exposure patterns corresponding to a plurality of repeated exposure units; measuring the distance between the edge structures of the adjacent exposure patterns in the multiple repeated exposure patterns; adjusting the exposure parameters of the photoetching machine according to the deviation between the measured spacing and the theoretical spacing, taking the adjusted exposure parameters as new current exposure parameters, and returning to expose the to-be-measured sample by using the photoetching machine based on the current exposure parameters to form a plurality of repeated exposure patterns, and the deviation between the measured distance and the theoretical distance meets a set condition. The exposure parameters obtained through final correction can reduce the distance deviation of the edge structures between the adjacent repeated exposure patterns, improve the accuracy of the pattern positions, reduce the defects in the subsequent process and improve the product yield.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly relates to a method and system for correcting exposure parameters of a reticle. Background Art

[0002] The lithography process is a core step in semiconductor manufacturing for transferring the reticle pattern to the surface of a sample, and its exposure accuracy directly affects chip performance and production cost.

[0003] In the traditional lithography process, a single reticle corresponds to an exposure mode for a single mask area. The single exposure pattern on the wafer is formed by successive exposures of the lithography machine. There is no problem with the exposure accuracy between adjacent mask areas, but the utilization rate of the reticle is low, the cost is high, and the reticle needs to be frequently replaced, reducing production efficiency.

[0004] To address the above problems, the multi-cell reticle, as a key means to improve the reticle utilization rate and reduce the reticle preparation cost, has been widely used in liquid crystal panel manufacturing and advanced semiconductor processes. The multi-cell reticle integrates multiple fixed and regularly arranged mask areas on a single reticle, corresponding to multiple repeated exposure units (Reticle Cells). It cooperates with the lithography machine for multiple partial exposures to form a high-density replication of multiple repeated exposure patterns on the wafer. Each repeated exposure pattern includes at least one graphic structure.

[0005] How to improve the exposure accuracy of the spliced reticle is a topic considered in the industry.

[0006] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of the present invention, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0007] Aiming at the problems in the prior art, the purpose of the present invention is to provide a method and system for correcting exposure parameters of a reticle, which overcomes the difficulties of the prior art and can effectively improve the exposure accuracy of the spliced reticle.

[0008] An embodiment of the present disclosure provides a method for correcting exposure parameters of a reticle. The reticle includes multiple repeated exposure units. The method for correcting exposure parameters of the reticle includes:

[0009] Determining mask area parameters based on the reticle design information, and setting the current exposure parameters of the lithography machine based on the mask area parameters;

[0010] Controlling the lithography machine to perform exposure according to the current exposure parameters, and generating multiple repeated exposure patterns corresponding to the multiple repeated exposure units;

[0011] Measure the pitch of the edge structures between adjacent exposure patterns among the multiple repeated exposure patterns;

[0012] Adjust the exposure parameters of the lithography machine according to the deviation between the measured pitch and the theoretical pitch, and use the adjusted exposure parameters as the new current exposure parameters. Then, based on the current exposure parameters, use the lithography machine to expose the sample to be measured to form multiple repeated exposure patterns until the deviation between the measured pitch and the theoretical pitch meets the set conditions.

[0013] Optionally, the mask design information includes the design coordinates of the repeated exposure unit, and the mask area parameter is determined by calculating the absolute value difference of the design coordinates in the horizontal and vertical directions.

[0014] Optionally, use a metrology device with nanometer-level measurement accuracy to measure the pitch of the edge structures between adjacent patterns among the multiple repeated exposure patterns.

[0015] Optionally, the metrology device is a overlay metrology device or a critical dimension scanning electron microscope.

[0016] Optionally, adjusting the exposure parameters of the lithography machine according to the deviation between the measured pitch and the theoretical pitch includes:

[0017] Calculate the adjustment amount according to the deviation and the scaling ratio from the mask to the sample to be measured;

[0018] Modify the mask area parameter based on the adjustment amount, and adjust the exposure parameters of the lithography machine based on the modified mask area parameter.

[0019] Optionally, the adjustment amount does not exceed 1 micron in both the horizontal and vertical directions.

[0020] Optionally, the set condition includes that the absolute value of the deviation between the measured pitch and the theoretical pitch does not exceed 3 nanometers.

[0021] Optionally, the set condition further includes that the critical dimension uniformity of the multiple repeated exposure patterns reaches a preset standard.

[0022] Optionally, the mask exposure parameter correction method is applied to process technologies of 28 nanometers and above.

[0023] The second aspect of the present disclosure provides a mask exposure parameter correction system. The mask includes multiple repeated exposure units. The mask exposure parameter correction system includes:

[0024] A setting module, which determines the mask area parameter based on the mask design information and sets the current exposure parameters of the lithography machine based on the mask area parameter;

[0025] An exposure module that controls the lithography machine to perform exposure according to the current exposure parameters, generating a plurality of repeated exposure patterns corresponding to the plurality of repeated exposure units;

[0026] A measurement module that measures the spacing between the edge structures of adjacent exposure patterns among the plurality of repeated exposure patterns;

[0027] An adjustment module that adjusts the exposure parameters of the lithography machine according to the deviation between the measured spacing and the theoretical spacing, and uses the adjusted exposure parameters as the new current exposure parameters, returning to perform exposure on the sample to be measured based on the current exposure parameters, forming a plurality of repeated exposure patterns until the deviation between the measured spacing and the theoretical spacing meets the set conditions.

[0028] The mask exposure parameter correction method and system proposed by the embodiments of the present disclosure have the following advantages:

[0029] In this embodiment, the exposure parameters are set based on the mask design information to ensure that the initial exposure is consistent with the design, providing a basis for subsequent spacing deviation correction. Each exposure forms a repeated exposure pattern, and its edge structure is convenient for measuring the spacing, providing direct evidence for subsequent spacing deviation. By measuring the spacing deviation between the actual spacing and the theoretical spacing, a quantitative basis is provided for adjusting the exposure parameters to ensure the pertinence of the correction. Then, the exposure parameters are adjusted according to the spacing deviation, directly affecting the position of the repeated exposure pattern in the next round of exposure and reducing the spacing deviation. Finally, through multiple iterations, the spacing deviation gradually converges, and each cycle optimizes the exposure parameters based on the feedback of the previous round, overcoming the influence of the light shielding band design and light diffraction.

[0030] Through the cyclic adjustment mechanism of the edge structure and exposure parameters, this embodiment realizes dynamic feedback, replaces the cumbersome periodic detection, and significantly improves the correction efficiency and effect. The finally corrected exposure parameters can reduce the spacing deviation of the edge structures between adjacent repeated exposure patterns, improve the accuracy of the pattern position, reduce defects in subsequent processes, and improve the product yield. The increase in yield means an increase in the number of effective chips, an improvement in the sample utilization rate, and a reduction in the scrapping of samples due to pattern defects.

[0031] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. Brief Description of the Drawings

[0032] By reading the detailed description of the non-limiting embodiments with reference to the following drawings, other features, objects, and advantages of the present invention will become more obvious.

[0033] Figure 1 and Figure 2 A schematic diagram of the local exposure problem of the related technology based on the multi-in-one mask;

[0034] Figure 3 Schematic plan view of a mask applicable to the mask exposure parameter correction method provided by the embodiments of the present disclosure;

[0035] Figure 4 Show Figure 3 An enlarged view of the mask region D in

[0036] Figure 5 Flowchart showing a mask exposure parameter correction method provided by the embodiments of the present disclosure;

[0037] Figure 6 Schematic diagram of the module structure of a mask exposure parameter correction system provided by the embodiments of the present disclosure. Detailed implementation manners

[0038] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be more complete and comprehensive, and will fully convey the concept of the example embodiments to those skilled in the art. The features, structures, or characteristics described may be combined in any suitable manner in one or more embodiments.

[0039] In addition, the accompanying drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repeated description will be omitted. Some of the block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities may be implemented in software form, or in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0040] In the related art, multi-in-one masks face challenges in practical applications. Each mask region forms an exposure pattern on the wafer through a single local exposure projection. To reduce the optical diffraction interference between adjacent mask regions, a light-shielding band is usually provided between the mask regions. Due to the different pattern layouts and light transmittance of the mask regions caused by chip design, the width and spacing of the light-shielding bands change accordingly, resulting in uneven diffraction of the projection light field and causing a pitch deviation between adjacent exposure patterns on the wafer, manifested as pattern overlap (such as Figure 1 the overlapping region between the circular exposure patterns P1 and P2 as shown) or an excessive gap (such as Figure 2 the gap S between the exposure patterns P3 and P4 as shown), thereby affecting critical dimension control and yield stability, especially in complex mask layouts or irregular pattern designs.

[0041] For example, the exposed patterns on the wafer are irregularly arranged due to the chip design. The lithography machine performs step-by-step exposure with fixed mask area parameters, making it difficult to dynamically adapt to the distribution characteristics of the irregularly arranged repeated exposure patterns in the multi-in-one mask, further exacerbating the pitch deviation between adjacent exposure patterns. The above-mentioned deviation may cause overlapping of exposure patterns, unbalanced exposure intensity, or faults, increasing the defect rate and reducing the yield. Existing methods attempt to partially improve the exposure amount balance by adjusting the light transmittance at the edge of the mask area, but cannot effectively solve the problems of pattern overlap or excessive pitch between adjacent exposure units.

[0042] The existing technology lacks dynamic optimization means based on the actual exposure effect of the sample and is difficult to correct the exposure parameters in real time. This limits the popularization and application of multi-in-one masks in advanced processes.

[0043] Therefore, there is an urgent need for an improved mask exposure parameter correction method and system to solve the deviation problems caused by the light shielding band design and light diffraction by measuring the actual pitch of the repeated exposure patterns on the sample to be measured and dynamically adjusting the exposure parameters of the lithography machine, improving the exposure accuracy, chip yield, and utilization efficiency of the sample to be measured.

[0044] Embodiments of the present disclosure provide a mask exposure parameter correction method. As Figure 3 shown, four mask areas A, B, C, and D are exemplarily shown on the mask, corresponding to four repeated exposure units. As Figure 4 shown in the enlarged view of area D, the repeated exposure unit includes a plurality of graphic structures D0, where each small square represents a pattern.

[0045] Therefore, the mask exposure parameter correction method of this embodiment is applied to a multi-in-one mask, which includes a plurality of repeated exposure units, such as the irregularly arranged A, B, C, and D above.

[0046] As Figure 5 shown, it includes but is not limited to the following steps:

[0047] Step 510: Determine the mask area parameters based on the mask design information, and set the current exposure parameters of the lithography machine based on the mask area parameters;

[0048] Step 520: Control the lithography machine to perform exposure according to the current exposure parameters, and generate a plurality of repeated exposure patterns corresponding to the plurality of repeated exposure units;

[0049] Step 530: Measure the pitch of the edge structures between adjacent exposure patterns in the plurality of repeated exposure patterns;

[0050] Step 540: Adjust the exposure parameters of the lithography machine according to the deviation between the measured pitch and the theoretical pitch, and use the adjusted exposure parameters as the new current exposure parameters, then return to Step 520 until the deviation between the measured pitch and the theoretical pitch meets the set conditions.

[0051] In this embodiment, the mask area parameter refers to the geometric range of a single exposure of the lithography machine, including the horizontal (X) and vertical (Y) dimensions (mask coordinate system). The exposure parameters are the operating parameters of the lithography machine, including exposure size, exposure dose (mJ / cm 2 ), focus position (micrometers), light source wavelength, step / scan mode, etc., which are not limited herein.

[0052] This embodiment sets the exposure parameters based on the mask design information to ensure that the initial exposure is consistent with the design, providing a basis for subsequent pitch deviation correction. Each exposure forms a repeated exposure pattern, and its edge structure is convenient for measuring the pitch, providing direct evidence of the subsequent pitch deviation. By measuring the pitch deviation between the actual pitch and the theoretical pitch, it provides a quantitative basis for adjusting the exposure parameters to ensure the pertinence of the correction. Then, adjust the exposure parameters according to the pitch deviation, which directly affects the position of the repeated exposure pattern in the next round of exposure and reduces the pitch deviation. Finally, through multiple iterations, the pitch deviation gradually converges, and the exposure parameters are optimized based on the feedback of the previous round in each cycle, overcoming the influence of the opaque band design and light diffraction.

[0053] Through the cyclic adjustment mechanism of the edge structure and exposure parameters, this embodiment realizes dynamic feedback, replaces the cumbersome periodic detection, and significantly improves the correction efficiency and effect. The finally corrected exposure parameters can reduce the pitch deviation of the edge structure between adjacent repeated exposure patterns, improve the accuracy of the pattern position, reduce defects in subsequent processes, and increase the product yield. An increase in yield means an increase in the number of effective chips, an improvement in sample utilization rate, and a reduction in sample scrapping due to pattern defects.

[0054] In the embodiment of the present disclosure, Step 510 is executed. Specifically, the mask design information includes the design coordinates of the repeated exposure unit, such as Figure 3 shown, the design coordinates of each mask area can be described using the coordinates of its four corners, that is, the relative position of each repeated exposure unit on the mask.

[0055] The mask area parameters are obtained by reading the mask design coordinate file (such as in GDSII or OASIS format), extracting the design coordinates of each repeated exposure unit in the horizontal (X-axis) and vertical (Y-axis) directions. The mask area parameters are determined by calculating the absolute value difference of the design coordinates in the horizontal and vertical directions, thereby determining the theoretical pitch (cellsize) of the subsequent repeated exposure patterns. This theoretical pitch is used as an initial input parameter to set the exposure parameters of the lithography machine, controlling the stepping distance and overlapping area of the stepper or scanner.

[0056] In the embodiment of the present disclosure, when performing step 520, the sample is exposed using the preliminarily set current exposure parameters to form multiple repeated exposure patterns. Each exposure pattern is usually a functional structure area or a device unit, and the edges between the repeated exposure patterns correspond to the splicing boundaries of adjacent exposure units on the mask.

[0057] Specifically, the above step 520 specifically includes the following sub-steps:

[0058] Prepare the lithography machine and the mask. Load the multi-in-one mask onto the lithography machine, align the mask to ensure that its coordinate system is consistent with the lithography machine design coordinate system, and calibrate the initial position of the mask (for example, the center coordinates of area A are (-1560m, 2260m)). Load the sample to be measured (such as a wafer), spin-coat the photoresist and perform pre-baking, and set the wafer height and clamping parameters;

[0059] Load the current exposure parameters (based on the mask area parameters) obtained from step 510 into the lithography machine control system, which includes: exposure size: corresponding to the geometric range of the mask area; exposure dose: set to a specific value (depending on the sensitivity of the photoresist); focus position: adjusted to the best focal plane on the wafer surface; light source wavelength: selected according to the process node; step / scan mode: set the stepping distance and scan speed;

[0060] The lithography machine is started, and each repeated exposure unit (A, B, C, D) is aligned one by one according to the step mode, and a single local exposure is performed. The projection optical system is used to project the repeated exposure units on the mask onto the wafer, and the magnification ratio determines the projection size. Each repeated exposure unit generates a repeated exposure pattern, which contains multiple graphic structures (such as Figure 4 the test pattern or functional pattern formed by the projection of the squares in the enlarged view of area D as shown). Control the exposure time to ensure that the photoresist is fully exposed and avoid under-exposure or over-exposure.

[0061] Based on the above steps, the exposure is completed and multiple repeated exposure patterns are generated.

[0062] In the embodiment of the present disclosure, step 530 is executed, and a measuring device with nanoscale measurement accuracy is used to measure the spacing of the edge structures between adjacent patterns in the multiple repeated exposure patterns. The patterns after sample exposure are captured and measured by a nanoscale high-precision measuring device (such as an overlay metrology system like ASML YieldStar, a critical dimension scanning electron microscope CD-SEM, etc.).

[0063] Specifically, the following method can be adopted to achieve it:

[0064] An alignment reference structure (such as an alignment mark, line width, serrated structure, crystal edge, etc.) is selected in each pair of adjacent repeated exposure patterns. The edge structures include grating marks (periodic lines) and functional pattern boundaries. The ASML YieldStar overlay metrology system or CD-SEM is used to measure the spacing between these edge structures. The measurement accuracy is high, and the measurement range covers the X and Y directions. The measured spacing is compared with the theoretical spacing to obtain the spacing deviation.

[0065] In the embodiment of the present disclosure, step 540 is executed. When there is a quantifiable deviation between the measured spacing and the theoretical spacing (such as exceeding 3 nm or other values), the exposure parameters are adjusted in the following manner:

[0066] According to the scaling ratio between the mask and the sample to be measured (i.e., the lithography machine scaling factor, such as 4:1 or 5:1 or other ratios), the deviation is mapped to the mask side. The adjustment amount ΔM on the mask side = ΔW × R, where ΔW is the spacing deviation on the wafer side and R is the lithography machine scaling factor;

[0067] The adjustment amounts (ΔX, ΔY) are calculated separately for the X direction and the Y direction.

[0068] If the spacing deviation is small (not exceeding 1 μm), the step distance in the exposure parameters is directly corrected. The new step distance Snew = Sold + M, and the new step distance parameter is loaded into the lithography machine control system to update the step parameters in the X and Y directions;

[0069] If the spacing deviation is large (for example, greater than 1 μm) or the deviation still does not meet the conditions after step adjustment, other exposure parameters may need to be further adjusted:

[0070] Exposure dose: If the spacing deviation causes the pattern edge to be blurred, the exposure dose can be increased to improve the exposure contrast of the photoresist.

[0071] Focus position: If the deviation is related to the focal plane offset, the focus position is finely adjusted (such as adjusted from 0 m to +0.05 m) to optimize the projection clarity.

[0072] Optical alignment model: Use the advanced alignment model of the lithography machine to compensate for the non-linearity between the mask and the wafer.

[0073] Therefore, adjust the exposure parameters of the lithography machine according to the deviation between the measured pitch and the theoretical pitch, including:

[0074] Calculate the adjustment amount according to the deviation and the scaling ratio from the mask to the sample to be measured;

[0075] Modify the mask region parameters based on the adjustment amount, and adjust the exposure parameters of the lithography machine based on the modified mask region parameters.

[0076] In the embodiments of the present disclosure, use the adjusted exposure parameters as the new current exposure parameters, re-expose the sample to be measured, and repeat the measurement and adjustment until the set conditions are met. This is a closed-loop iterative optimization step, and the set conditions include but are not limited to:

[0077] The absolute value of the deviation between the measured pitch and the theoretical pitch does not exceed 3 nanometers;

[0078] The overlap of the repeated exposure patterns does not exceed 20%;

[0079] The critical dimension uniformity of multiple repeated exposure patterns reaches a preset standard, for example, the standard deviation σ of the critical dimension CD uniformity of the repeated exposure patterns is ≤ 1.5 nm.

[0080] If any of the above conditions is met, it is considered that the current exposure parameters are optimal, stop the correction process, and enter the mass production stage.

[0081] The mask exposure parameter correction method of the embodiments of the present disclosure is applied to the method for correcting the pattern coincidence deviation or pitch error between the repeated exposure patterns of the mask in the lithography process, and is particularly suitable for the multi-in-one mask or the local exposure scenario. By introducing a high-precision measurement feedback mechanism, the exposure parameters of the lithography machine are dynamically optimized, and the pattern alignment accuracy and the chip manufacturing yield are improved.

[0082] This method is applicable to advanced process technologies of 28 nm and above, and is particularly effective in the following scenarios: multi-die reticle layout design; high-precision alignment requirements (such as 3D NAND stacking structure, EUV double exposure); protection and recovery control of pattern stability during lithography rework.

[0083] Compared with the related technologies, the method provided by the embodiments of the present disclosure has the following advantages:

[0084] 1) Yield improvement: By eliminating the problems of overlapping / missing of the repeated exposure pattern boundaries, the chip yield is effectively improved;

[0085] 2) Automatic calibration closed loop: Support full-automatic multi-round measurement and correction, replacing the manual experience judgment of engineers;

[0086] 3) High mask utilization rate: Allows any combination of patterns to be laid out, eliminating the need for manual and repetitive spectral units, and increasing the degree of freedom in mask design.

[0087] The embodiments of the present disclosure also provide a mask exposure parameter correction system, as Figure 6 shown, which includes the following modules:

[0088] A setting module 610 that determines mask area parameters based on mask design information and sets the current exposure parameters of the lithography machine based on the mask area parameters;

[0089] An exposure module 620 that controls the lithography machine to perform exposure according to the current exposure parameters, generating a plurality of repeated exposure patterns corresponding to the plurality of repeated exposure units;

[0090] A measurement module 630 that measures the spacing between the edge structures of adjacent exposure patterns among the plurality of repeated exposure patterns;

[0091] An adjustment module 640 that adjusts the exposure parameters of the lithography machine according to the deviation between the measured spacing and the theoretical spacing, and uses the adjusted exposure parameters as the new current exposure parameters, returning to perform exposure on the sample to be measured using the lithography machine based on the current exposure parameters to form a plurality of repeated exposure patterns until the deviation between the measured spacing and the theoretical spacing meets the set conditions.

[0092] This system can be deployed on the central control server of the wafer fab or an embedded lithography control terminal, and has good scalability and compatibility with the lithography machine.

[0093] After considering the specification and practicing the invention disclosed herein, those skilled in the art will readily conceive of other embodiments of the present disclosure. The present disclosure is intended to cover any variations, uses, or adaptations of the present disclosure, which follow the general principles of the present disclosure and include common general knowledge or conventional technical means in the technical field not disclosed in the present disclosure. The specification and examples are only illustrative, and the true scope and spirit of the present disclosure are pointed out by the appended claims.

Claims

1. A method for correcting mask exposure parameters, characterized in that The reticle includes multiple repeated exposure units, and the method for correcting the exposure parameters of the reticle includes: Determining mask area parameters based on the reticle design information, and setting the current exposure parameters of the lithography machine based on the mask area parameters; Controlling the lithography machine to perform exposure according to the current exposure parameters, and generating multiple repeated exposure patterns corresponding to the multiple repeated exposure units; Measuring the spacing of the edge structures between adjacent exposure patterns among the multiple repeated exposure patterns; Adjusting the exposure parameters of the lithography machine according to the deviation between the measured spacing and the theoretical spacing, and using the adjusted exposure parameters as the new current exposure parameters, and returning to perform exposure on the sample to be measured using the lithography machine based on the current exposure parameters to form multiple repeated exposure patterns until the deviation between the measured spacing and the theoretical spacing meets the set conditions.

2. The mask exposure parameter correction method according to claim 1, wherein The reticle design information includes the design coordinates of the repeated exposure units, and the mask area parameters are determined by calculating the absolute value differences of the design coordinates in the horizontal and vertical directions.

3. The mask exposure parameter correction method according to claim 1, characterized in that A measuring device with nanometer-level measurement accuracy is used to measure the spacing of the edge structures between adjacent patterns among the multiple repeated exposure patterns.

4. The mask exposure parameter correction method according to claim 3, wherein The measuring device is a overlay measurement device or a critical dimension scanning electron microscope.

5. The method for correcting mask exposure parameters according to claim 1, characterized in that, The adjusting the exposure parameters of the lithography machine according to the deviation between the measured spacing and the theoretical spacing includes: Calculating an adjustment amount according to the deviation and the scaling ratio from the reticle to the sample to be measured; Modifying the mask area parameters based on the adjustment amount, and adjusting the exposure parameters of the lithography machine based on the modified mask area parameters.

6. The mask exposure parameter correction method according to claim 5, wherein, The adjustment amount does not exceed 1 micrometer in both the horizontal and vertical directions.

7. The method for correcting mask exposure parameters according to claim 1, characterized in that, The set conditions include that the absolute value of the deviation between the measured spacing and the theoretical spacing does not exceed 3 nanometers.

8. The method for correcting mask exposure parameters according to claim 7, wherein The set conditions further include that the critical dimension uniformity of the multiple repeated exposure patterns reaches a preset standard.

9. The method for correcting mask exposure parameters according to claim 1, wherein The method for correcting the exposure parameters of the reticle is applied to a process technology of 28 nanometers and above.

10. A mask exposure parameter correction system, characterized in that, The reticle includes multiple repeated exposure units, and the system for correcting the exposure parameters of the reticle includes: A setting module, which determines mask area parameters based on the reticle design information, and sets the current exposure parameters of the lithography machine based on the mask area parameters; An exposure module, which controls the lithography machine to perform exposure according to the current exposure parameters, and generates multiple repeated exposure patterns corresponding to the multiple repeated exposure units; A measuring module, which measures the spacing of the edge structures between adjacent exposure patterns among the multiple repeated exposure patterns; An adjusting module, which adjusts the exposure parameters of the lithography machine according to the deviation between the measured spacing and the theoretical spacing, and uses the adjusted exposure parameters as the new current exposure parameters, and returns to perform exposure on the sample to be measured using the lithography machine based on the current exposure parameters to form multiple repeated exposure patterns until the deviation between the measured spacing and the theoretical spacing meets the set conditions.

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