A vacuum evaporation machine

CN120291024BActive Publication Date: 2026-08-21SUZHOU YOULUN VACUUM EQUIP TECH CO LTD
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Patent Information

Application Number
CN202510715087.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-05-30
Publication Date
2026-08-21
Estimated Expiration
2045-05-30

AI Technical Summary

Technical Problem

[0003]1)膜层均匀性受限于静态载具结构,难以实现三维立体镀膜;

Benefits of technology

[0010]In view of this, to solve the above problems, this invention proposes a vacuum evaporation deposition machine, including a vacuum system, a carrier rotation system, an integrated optical control system, a crystal oscillator system, a heating system, a water cooling system, and an evaporation deposition system. By embedding the integrated optical control system and the crystal oscillator system into the hollow cavity of the first rotation mechanism, the coordinated operation of rotational deposition and real-time detection is achieved, shortening the detection optical path by 20-30% and improving the signal-to-noise ratio; rotation axis detection ensures data representativeness; the combined effect of top radiative heating 400°C and sidewall conductive heating keeps the substrate surface temperature difference <±1.5°C, and the gradient temperature field formed by carrier rotation promotes the directional alignment of film molecules, resulting in a thicker film layer. The density is increased by 15-20%. The water cooling system adopts a ring manifold design, and the flow channel layout is optimized through computational fluid dynamics, which improves the cooling efficiency of the vapor deposition system by 40%. Combined with the molecular pump group of the vacuum system, the temperature rise of continuous evaporation deposition is less than 3°C for 8 hours. The modular architecture design enables high integration of the equipment, and the coaxial design of the carrier rotation system and the detection system saves 30% of space. The coordinated control of the rotation-heating-detection three systems ensures that the process repeatability error is less than 0.8%. The dynamic compensation algorithm automatically adjusts the vapor deposition rate and carrier rotation speed by comparing the light control data and crystal oscillator data in real time, achieving a film thickness control accuracy of ±2nm and a refractive index deviation of less than 0.5%.

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Abstract

The present application provides a novel vacuum evaporation machine, including vacuum system, carrier rotation system, light control integrated system, crystal oscillator system, heating system, water cooling system and evaporation system, through the light control integrated system and crystal oscillator system are built-in in the hollow cavity of first rotation mechanism, the cooperative work of rotation coating and real-time detection is realized, the detection light path is shortened, and the signal-to-noise ratio is improved; The rotation axis detection ensures the data representativeness; The synergistic effect of top radiation heating and side wall conduction heating makes the substrate surface temperature difference < ± 1.5 DEG C, the water cooling system makes the evaporation system cooling efficiency improve 40%, the modular architecture design makes the equipment highly integrated, the carrier rotation system and the detection system are coaxial design, and 30% space is saved; The three systems of rotation, heating and detection are cooperatively controlled, the dynamic compensation algorithm compares the light control data and the crystal oscillator data in real time, automatically adjusts the evaporation rate and the carrier rotation speed, realizes the film thickness control precision ± 2nm, and the refractive index deviation is less than 0.5%.
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Description

Technical Field

[0001] This invention relates to the field of vacuum evaporation equipment technology, and more specifically, to a vacuum evaporation equipment. Background Technology

[0002] With the rapid development of optoelectronic displays, semiconductor packaging, optical coating, and other fields, higher technical requirements have been placed on vacuum evaporation equipment. Traditional vacuum evaporation machines generally suffer from the following technical challenges:

[0003] 1) The uniformity of the film layer is limited by the static carrier structure, making it difficult to achieve three-dimensional coating;

[0004] 2) The coating process lacks real-time monitoring methods, and the film thickness and optical parameters can only be confirmed by subsequent testing;

[0005] 3) Uneven temperature field distribution on the substrate leads to differences in film adhesion density;

[0006] 4) Loose equipment structure layout makes it difficult to maintain vacuum;

[0007] 5) High-temperature radiation from the vapor deposition source affects equipment stability.

[0008] While existing technologies such as CN112626486B use rotating carriers to improve uniformity, the separation of the rotating mechanism from the detection system results in a large equipment size, and the vibration generated by the rotation affects the detection accuracy.

[0009] Therefore, there is an urgent need to develop a highly integrated vacuum evaporation equipment that combines dynamic coating, online detection, and precise temperature control. Summary of the Invention

[0010] In view of this, to solve the above problems, this invention proposes a vacuum evaporation deposition machine, including a vacuum system, a carrier rotation system, an integrated optical control system, a crystal oscillator system, a heating system, a water cooling system, and an evaporation deposition system. By embedding the integrated optical control system and the crystal oscillator system into the hollow cavity of the first rotation mechanism, the coordinated operation of rotational deposition and real-time detection is achieved, shortening the detection optical path by 20-30% and improving the signal-to-noise ratio; rotation axis detection ensures data representativeness; the combined effect of top radiative heating 400°C and sidewall conductive heating keeps the substrate surface temperature difference <±1.5°C, and the gradient temperature field formed by carrier rotation promotes the directional alignment of film molecules, resulting in a thicker film layer. The density is increased by 15-20%. The water cooling system adopts a ring manifold design, and the flow channel layout is optimized through computational fluid dynamics, which improves the cooling efficiency of the vapor deposition system by 40%. Combined with the molecular pump group of the vacuum system, the temperature rise of continuous evaporation deposition is less than 3°C for 8 hours. The modular architecture design enables high integration of the equipment, and the coaxial design of the carrier rotation system and the detection system saves 30% of space. The coordinated control of the rotation-heating-detection three systems ensures that the process repeatability error is less than 0.8%. The dynamic compensation algorithm automatically adjusts the vapor deposition rate and carrier rotation speed by comparing the light control data and crystal oscillator data in real time, achieving a film thickness control accuracy of ±2nm and a refractive index deviation of less than 0.5%.

[0011] A vacuum evaporation deposition machine, characterized in that it comprises a vacuum system, a carrier rotation system, a light control integrated system, a crystal oscillator system, a heating system, a water cooling system, and an evaporation deposition system. The carrier rotation system is located at the top of the evaporation deposition machine housing and includes a first rotation mechanism and a carrier device sleeved outside the first rotation mechanism. The first rotation mechanism drives the carrier device to rotate. The inner cavity of the first rotation mechanism is a hollow structure, and the light control integrated system and the crystal oscillator system are installed within the hollow structure. The light control integrated system is used to detect the refractive index and transmittance parameters of the deposition film, and the crystal oscillator system is used to detect the deposition film thickness. The heating system is located within the... The top and four side walls of the vapor deposition machine housing, near the carrier rotation system, are used to heat the substrate on the carrier device, making the coating material on its surface more uniform. A door frame is provided on the operating side of the vapor deposition machine housing, and a vacuum chamber extends outward from the opposite side of the door frame. The vacuum chamber is connected to a vacuum system to ensure that the working environment of the vapor deposition machine is in a vacuum state. The bottom of the vapor deposition machine housing is equipped with a vapor deposition system for heating and vapor deposition of the coating material onto the substrate on the carrier device. A water cooling system is provided on the four side walls of the vapor deposition machine housing near the vapor deposition system to cool and reduce the temperature of the vapor deposition system.

[0012] In some embodiments, the heating system includes multiple first heating wires and multiple second heating wires. The first heating wires are evenly distributed on the inner wall of the top of the vapor deposition machine housing, and the second heating wires are evenly distributed on the inner wall of the surrounding side walls near the carrier rotation system. Each first heating wire and second heating wire is a continuous S-shaped wire with one end as the positive electrode and the other end as the negative electrode. Heating the first heating wires and second heating wires to a certain temperature generates thermal radiation to heat the substrate, avoiding light pollution while making the heating more uniform and not affecting the detection of the substrate transmittance.

[0013] In some embodiments, the upper part of the first rotating mechanism passes through the housing of the vacuum evaporation machine and is connected to an external driver. The carrier device includes a support assembly and a carrier to be coated. The lower part of the first rotating mechanism is sleeved with the support assembly. The support assembly includes an upper support ring and a lower support ring. The upper support ring is connected to the lower support ring through a support connection assembly. The lower support ring is used to support the carrier to be coated.

[0014] In some embodiments, a second rotating component is fitted inside the internal cavity of the first rotating mechanism, and the internal cavity of the first rotating mechanism and the second rotating component do not interfere with each other. The rotating shaft of the second rotating component is connected to an intermediate rotating shaft. A fourth through hole is provided in the center of the carrier to be coated. A crystal oscillator system is connected to the bottom end of the intermediate rotating shaft. The crystal oscillator system is placed in the cavity formed by the fourth through hole and does not interfere with the fourth through hole. Multiple crystal oscillators are provided on the crystal oscillator system. A probe cap is provided at the bottom of the crystal oscillator system. A second through hole is provided at the probe cap. The crystal oscillator system is rotated by the first rotating component, causing the crystal oscillators to rotate, so that the position of one of the crystal oscillators is completely matched with the position of the second through hole. The coating thickness of the vacuum evaporation machine in the current state is detected by the coating amount at the crystal oscillator.

[0015] In some embodiments, the probe outer cylinder is sleeved on the intermediate rotating shaft. The probe outer cylinder has a hollow structure and does not interfere with the intermediate rotating shaft. The bottom of the probe outer cylinder is flush with the probe cap. The probe outer cylinder extends upward to connect with the third rotating mechanism. The lower part of the probe outer cylinder is connected to the optical control integrated system for detecting the refractive index or transmittance of the coating on the optical control integrated system. The third rotating mechanism is used to rotate the optical control integrated system.

[0016] In some embodiments, the vacuum system includes a preliminary vacuum device and a high vacuum device. The preliminary vacuum device is connected to one side of the vacuum chamber and is used to perform preliminary vacuuming of the working environment of the vapor deposition machine. The high vacuum device is connected to the bottom of the vacuum chamber and is used to perform high vacuuming of the working environment of the vapor deposition machine.

[0017] Furthermore, during the initial vacuuming, the high vacuum device is in a closed state connected to the bottom of the vacuuming chamber. A switch valve cover is provided connected to the bottom of the high vacuum device and the vacuuming chamber. A telescopic cylinder is connected to the top of the switch valve cover to control the opening and closing of the switch valve cover.

[0018] Furthermore, the switch valve cover has an upwardly convex structure, which allows the stroke of the telescopic cylinder to be shortened.

[0019] Furthermore, a cooling device is provided at the connection between the vacuum chamber and the vapor deposition machine housing. The cooling device is a coil structure, which is coiled layer by layer around the four walls of the connection between the vacuum chamber and the vapor deposition machine housing. It is used to cool the air entering the vacuum system from the vapor deposition machine housing to prevent it from being too hot and causing damage to the initial vacuum device and the high vacuum device.

[0020] In some embodiments, the vapor deposition system includes a crucible vapor deposition device and a thermal resistance heating vapor deposition device. The crucible vapor deposition device works with an electron beam to heat and vapor deposit the target material, while the thermal resistance device works with a tungsten wire to heat and vapor deposit the target material. Either one of the vapor deposition devices can be selected or used simultaneously.

[0021] In some embodiments, an ion source device is also provided near the vapor deposition system. The ion source device is located below the carrier rotation system and is used for cleaning the substrate.

[0022] Furthermore, the ion source device includes a first adjustment scale and a second adjustment scale. The first adjustment scale is used to record the vertical adjustment distance of the ion source device, and the second adjustment scale is used to record the adjustment angle of the ion source device, which facilitates subsequent adjustment.

[0023] The beneficial effects of this invention are as follows: This invention proposes a vacuum evaporation deposition machine, including a vacuum system, a carrier rotation system, an integrated optical control system, a crystal oscillator system, a heating system, a water cooling system, and an evaporation deposition system. By embedding the integrated optical control system and the crystal oscillator system within the hollow cavity of the first rotation mechanism, the collaborative operation of rotational deposition and real-time detection is achieved, shortening the detection optical path by 20-30% and improving the signal-to-noise ratio; rotation axis detection ensures data representativeness; the synergistic effect of top radiative heating (400°C) and sidewall conductive heating ensures a substrate surface temperature difference of <±1.5°C, which, combined with the carrier rotation, forms a gradient temperature field, promoting the directional alignment of film molecules and increasing the film density. The cooling system achieves a 15-20% improvement. Utilizing a ring-shaped manifold design, the water-cooling system optimizes the flow channel layout through computational fluid dynamics, increasing the cooling efficiency of the vapor deposition system by 40%. Combined with the molecular pump group of the vacuum system, it achieves a temperature rise of <3℃ during continuous 8-hour vapor deposition. The modular architecture design enables high equipment integration, and the coaxial design of the carrier rotation system and detection system saves 30% of space. The coordinated control of the rotation, heating, and detection systems ensures a process repeatability error of <0.8%. The dynamic compensation algorithm automatically adjusts the vapor deposition rate and carrier rotation speed by comparing optical control data and crystal oscillator data in real time, achieving a film thickness control accuracy of ±2nm and a refractive index deviation of <0.5%. Attached Figure Description

[0024] Figure 1 This is an assembly diagram of the vacuum evaporation deposition machine of the present invention.

[0025] Figure 2 This is an assembly diagram of the vacuum system of the vacuum evaporation machine of the present invention.

[0026] Figure 3 This is a side view of the heating system of the vacuum evaporation machine of the present invention.

[0027] Figure 4 This is a top assembly diagram of the heating system of the vacuum evaporation machine of the present invention.

[0028] Figure 5 This is an assembly diagram of the carrier rotation system of the vacuum evaporation machine of the present invention.

[0029] Figure 6 This is a cross-sectional view of the carrier rotation system of the vacuum evaporation deposition machine of the present invention. Figure 1 .

[0030] Figure 7 This is a cross-sectional view of the carrier rotation system of the vacuum evaporation deposition machine of the present invention. Figure 2 .

[0031] Figure 8 This is a structural diagram of the switch valve cover of the vacuum evaporation machine of the present invention.

[0032] Figure 9 This is a structural diagram of the cooling device for the vacuum evaporation machine of the present invention.

[0033] Figure 10 This is a structural diagram of the water cooling system of the vacuum evaporation coating machine of the present invention.

[0034] Figure 11 This is a structural diagram of the ion source device of the vacuum evaporation machine of the present invention.

[0035] Explanation of main component symbols

[0036] The system includes: a carrier rotation system 100, a first rotation mechanism 101, an upper support ring 107, a lower support ring 108, a carrier 109, a fourth through hole 110, a second rotating component 200, an intermediate rotating shaft 220, a crystal oscillator system 230, a crystal oscillator chip 235, a probe cap 236, a second through hole 237, a probe outer cylinder 250, a third rotation mechanism 260, a light control integrated system 261, a vacuum system 300, a switch valve cover 310, a cooling device 320, a first heating wire 410, a second heating wire 420, a water cooling system 500, a crucible vapor deposition device 610, a thermal resistance heating vapor deposition device 620, an ion source device 700, a first adjusting scale 710, a second adjusting scale 720, a vapor deposition machine housing 800, a door frame 810, and a vacuum chamber 820.

[0037] The following detailed description, in conjunction with the accompanying drawings, will further illustrate the present invention. Detailed Implementation

[0038] Example:

[0039] like Figure 1-2 and Figure 10As shown, a vacuum evaporation coating machine includes a vacuum system 300, a carrier rotation system 100, a light control integrated system 261, a crystal oscillator system 230, a heating system, a water cooling system 500, and an evaporation coating system. The carrier rotation system 100 is located on top of the evaporation coating machine housing 800 and includes a first rotation mechanism 101 and a carrier device sleeved outside the first rotation mechanism 101. The first rotation mechanism 101 drives the carrier device to rotate. The inner cavity of the first rotation mechanism 101 is a hollow structure. The light control integrated system 261 and the crystal oscillator system 230 are installed inside the hollow structure. The light control integrated system 261 is used to detect the refractive index and transmittance parameters of the coating, and the crystal oscillator system 230 is used to detect the coating thickness. The heating system is equipped with... The vapor deposition machine housing 800 is positioned at the top and around its side walls near the carrier rotation system 100 to heat the substrate on the carrier device, making the coating material on its surface more uniform. A door frame 810 is provided on the operating side of the vapor deposition machine housing 800, and a vacuum chamber 820 extends outward from the opposite side of the door frame 810. The vacuum chamber 820 is connected to the vacuum system 300 to ensure that the working environment of the vapor deposition machine is in a vacuum state. A vapor deposition system is provided at the bottom of the vapor deposition machine housing 800 to heat and vapor deposit the coating material onto the substrate on the carrier device. A water cooling system 500 is provided on the side walls of the vapor deposition machine housing 800 near the vapor deposition system to cool and reduce the temperature of the vapor deposition system.

[0040] The vapor deposition system includes a crucible vapor deposition device 610 and a thermal resistance heating vapor deposition device 620. The crucible vapor deposition device 610 works with an electron beam to heat and vapor deposit the target material, while the thermal resistance device works with a tungsten wire to heat and vapor deposit the target material. Either one of the vapor deposition devices can be selected or used simultaneously.

[0041] like Figure 3-4 As shown, the heating system includes multiple first heating wires 410 and multiple second heating wires 420. The first heating wires 410 are evenly distributed on the inner wall of the top of the vapor deposition machine housing 800, and the second heating wires 420 are evenly distributed on the inner wall of the surrounding side walls near the carrier rotation system 100. Each first heating wire 410 and second heating wire 420 is a continuous S-shaped wire with one end as the positive electrode and the other end as the negative electrode. Heating the first heating wires 410 and second heating wires 420 to a certain temperature generates thermal radiation to heat the substrate, avoiding light pollution while making the heating more uniform and not affecting the detection of the substrate transmittance.

[0042] like Figure 5-7As shown, the upper part of the first rotating mechanism 101 passes through the housing of the vacuum evaporation machine and connects to an external driver. The carrier device includes a support assembly and a carrier 109 to be coated. The lower part of the first rotating mechanism 101 is fitted with the support assembly. The support assembly includes an upper support ring 107 and a lower support ring 108. The upper support ring 107 is connected to the lower support ring 108 through a support connection assembly. The lower support ring 108 is used to support the carrier 109 to be coated. A second rotating component 200 is fitted inside the cavity of the first rotating mechanism 101. The cavity of the first rotating mechanism 101 and the second rotating component 200 do not interfere with each other. The rotation axis of the second rotating component 200 is connected to an intermediate rotating shaft 220. A fourth through hole 110 is provided in the center of the carrier 109 to be coated. A crystal oscillator system 230 is connected to the bottom end of the intermediate rotating shaft 220. The crystal oscillator system 230 is placed in the cavity formed by the fourth through hole 110 and does not interfere with the fourth through hole 110. The system 230 is equipped with multiple crystal oscillators 235. A probe cap 236 is located at the lower part of the crystal oscillator system 230. A second through-hole 237 is located at the probe cap 236. Rotating the crystal oscillator system 230 via a first rotating component causes the crystal oscillators 235 to rotate, ensuring that one of the crystal oscillators 235 is perfectly aligned with the second through-hole 237. The coating thickness of the vacuum evaporation machine in its current state is detected by measuring the coating amount at this crystal oscillator 235. The probe is sleeved on the intermediate rotating shaft 220. The probe outer cylinder 250 is hollow and does not interfere with the intermediate rotating shaft 220. The bottom of the probe outer cylinder 250 is flush with the probe cap 236. The probe outer cylinder 250 extends upward to connect with the third rotating mechanism 260. The lower part of the probe outer cylinder 250 is connected to the light control integrated system 261, which is used to detect the refractive index or transmittance of the coating on the light control integrated system 261. The third rotating mechanism 260 is used to rotate the light control integrated system 261.

[0043] like Figure 2 and Figure 8 As shown, the vacuum system 300 includes a preliminary vacuum device and a high vacuum device. The preliminary vacuum device is connected to one side of the vacuum chamber 820 and is used to perform preliminary vacuuming of the working environment of the vapor deposition machine. The high vacuum device is connected to the bottom of the vacuum chamber 820 and is used to perform high vacuuming of the working environment of the vapor deposition machine. When performing preliminary vacuuming, the connection between the high vacuum device and the bottom of the vacuum chamber 820 is closed. A switch valve cover 310 is provided on the connection between the high vacuum device and the bottom of the vacuum chamber 820. A telescopic cylinder is connected to the top of the switch valve cover 310 to control the opening and closing of the switch valve cover 310. The switch valve cover 310 has an upward convex structure, which can shorten the stroke of the telescopic cylinder.

[0044] like Figure 9 As shown, a cooling device 320 is provided at the connection between the vacuum chamber 820 and the vapor deposition machine housing 800. The cooling device 320 is a coil structure, which is coiled layer by layer around the four walls of the connection between the vacuum chamber 820 and the vapor deposition machine housing 800. It is used to cool the air entering the vacuum system 300 from the vapor deposition machine housing 800 to prevent it from being too hot and causing damage to the initial vacuum device and the high vacuum device.

[0045] like Figure 10 As shown, in some embodiments, an ion source device 700 is also provided near the vapor deposition system. The ion source device 700 is located at the lower part of the carrier rotation system 100 and is used for cleaning the substrate.

[0046] like Figure 11 As shown, the ion source device 700 includes a first adjustment scale 710 and a second adjustment scale 720. The first adjustment scale 710 is used to record the vertical adjustment distance of the ion source device 700, and the second adjustment scale 720 is used to record the angle of adjustment of the ion source device 700, which facilitates subsequent adjustment.

[0047] The beneficial effects of this invention: This invention proposes a vacuum evaporation deposition machine, including a vacuum system 300, a carrier rotation system 100, a light control integrated system 261, a crystal oscillator system 230, a heating system, a water cooling system 500, and an evaporation deposition system. By embedding the light control integrated system 261 and the crystal oscillator system 230 into the hollow cavity of the first rotation mechanism 101, the coordinated operation of rotational deposition and real-time detection is achieved, shortening the detection optical path by 20-30% and improving the signal-to-noise ratio; rotation axis detection ensures data representativeness; the top radiative heating 400 and the sidewall conductive heating work together to keep the substrate surface temperature difference < ±1.5℃, and the gradient temperature field formed by the carrier rotation promotes the orientation of film molecules. The system improves film density by 15-20%. The water-cooling system 500 adopts a ring manifold design, and the flow channel layout is optimized through computational fluid dynamics, which improves the cooling efficiency of the evaporation system by 40%. Combined with the molecular pump group of the vacuum system 300, the temperature rise of continuous evaporation for 8 hours is less than 3°C. The modular architecture design enables high integration of the equipment. The coaxial design of the carrier rotation system 100 and the detection system saves 30% of space. The coordinated control of the rotation-heating-detection three systems ensures that the process repeatability error is less than 0.8%. The dynamic compensation algorithm automatically adjusts the evaporation rate and carrier rotation speed by comparing the optical control data and crystal oscillator data in real time, achieving a film thickness control accuracy of ±2nm and a refractive index deviation of less than 0.5%.

[0048] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A vacuum evaporation deposition machine, characterized in that: The system includes a vacuum system (300), a carrier rotation system (100), an integrated optical control system (261), a crystal oscillator system (230), a heating system, a water cooling system (500), and a vapor deposition system. The carrier rotation system (100) is located on top of the vapor deposition machine housing (800) and includes a first rotation mechanism (101) and a carrier device sleeved outside the first rotation mechanism (101). The carrier device is rotated by the first rotation mechanism (101), and the inner cavity of the first rotation mechanism (101) is hollow. The hollow structure houses an integrated optical control system (261) and a crystal oscillator system (230). The integrated optical control system (261) is used to detect the refractive index and transmittance parameters of the coating, and the crystal oscillator system (230) is used to detect the coating thickness. The heating system is located on the top and surrounding side walls of the vapor deposition machine housing (800) near the carrier rotation system (100) for heating the substrate on the carrier device. A door frame (810) is provided on the operating side of the vapor deposition machine housing (800). A vacuum chamber (820) extends outward from the opposite side of the door frame (810). The vacuum chamber (820) is connected to a vacuum system (300) to ensure a vacuum environment for the vapor deposition machine. A vapor deposition system is located at the bottom of the vapor deposition machine housing (800) to heat and vapor-deposit the coating material onto a substrate on the carrier device. A water cooling system (500) is located on the surrounding side walls of the vapor deposition machine housing (800) near the vapor deposition system to cool the vapor deposition system. The heating system... The system includes multiple first heating wires (410) and multiple second heating wires (420). The first heating wires (410) are evenly distributed on the inner wall of the top of the vapor deposition machine housing (800), and the second heating wires (420) are evenly distributed on the inner wall of the surrounding side walls near the carrier rotation system (100). Each first heating wire (410) and second heating wire (420) is a continuous S-shaped wire with one end as the positive electrode and the other end as the negative electrode. The first heating wires (410) and second heating wires (420) are heated to a temperature that can generate thermal radiation, thereby heating the substrate.

2. The vacuum evaporation machine as described in claim 1, characterized in that: The upper part of the first rotating mechanism (101) passes through the housing of the vacuum evaporation machine and is connected to an external driver. The carrier device includes a support assembly and a carrier (109) to be coated. The lower part of the first rotating mechanism (101) is sleeved with the support assembly. The support assembly includes an upper support ring (107) and a lower support ring (108). The upper support ring (107) is connected to the lower support ring (108) through a support connection assembly. The lower support ring (108) is used to support the carrier (109) to be coated.

3. The vacuum evaporation machine as described in claim 2, characterized in that: The first rotating mechanism (101) has a second rotating component (200) fitted inside its internal cavity. The internal cavity of the first rotating mechanism (101) and the second rotating component (200) do not interfere with each other. The rotating shaft of the second rotating component (200) is connected to an intermediate rotating shaft (220). The carrier (109) to be coated has a fourth through hole (110) in the center. The bottom end of the intermediate rotating shaft (220) is connected to a crystal oscillator system (230). The crystal oscillator system (230) is placed in the cavity formed by the fourth through hole (110) and does not interfere with the fourth through hole (110). Interference is formed by the through hole (110). The crystal oscillator system (230) is provided with multiple crystal oscillators (235). The lower part of the crystal oscillator system (230) is provided with a probe cap (236). The probe cap (236) is provided with a second through hole (237). The crystal oscillator system (230) is rotated by the first rotating component, which drives the crystal oscillator (235) to rotate, so that the position of one of the crystal oscillators (235) is completely matched with the second through hole (237). The coating thickness of the vacuum evaporation machine in the current state is detected by the coating amount at the crystal oscillator (235).

4. The vacuum evaporation machine as described in claim 3, characterized in that: The intermediate rotating shaft (220) is fitted with a probe outer cylinder (250). The probe outer cylinder (250) is hollow and does not interfere with the intermediate rotating shaft (220). The bottom of the probe outer cylinder (250) is flush with the probe cap (236). The probe outer cylinder (250) extends upward to connect with the third rotating mechanism (260). The lower part of the probe outer cylinder (250) is connected to the light control integrated system (261) for detecting the refractive index or transmittance of the coating on the light control integrated system (261). The third rotating mechanism (260) is used to rotate the light control integrated system (261).

5. The vacuum evaporation machine as described in claim 1, characterized in that: The vacuum system (300) includes a preliminary vacuum device and a high vacuum device. The preliminary vacuum device is connected to one side of the vacuum chamber (820) and is used to perform preliminary vacuuming of the working environment of the vapor deposition machine. The high vacuum device is connected to the bottom of the vacuum chamber (820) and is used to perform high vacuuming of the working environment of the vapor deposition machine.

6. The vacuum evaporation machine as described in claim 5, characterized in that: When performing initial vacuuming, the high vacuum device is in a closed state connected to the bottom of the vacuum chamber (820). A switch valve cover (310) is provided connected to the bottom of the high vacuum device and the vacuum chamber (820). A telescopic cylinder is connected to the top of the switch valve cover (310) to control the opening and closing of the switch valve cover (310). The switch valve cover (310) has an upward convex structure, which can shorten the stroke of the telescopic cylinder.

7. The vacuum evaporation machine as described in claim 6, characterized in that: A cooling device (320) is provided at the connection between the vacuum chamber (820) and the vapor deposition machine housing (800). The cooling device (320) is a coil structure, which is coiled layer by layer around the four walls of the connection between the vacuum chamber (820) and the vapor deposition machine housing (800). It is used to cool the air entering the vacuum system (300) from the vapor deposition machine housing (800) to prevent it from being too hot and causing damage to the initial vacuum device and the high vacuum device.

8. The vacuum evaporation machine as described in claim 1, characterized in that: The vapor deposition system includes a crucible vapor deposition device (610) and a thermal resistance heating vapor deposition device (620). The crucible vapor deposition device (610) is used in conjunction with an electron beam to heat and vapor deposit the target material, while the thermal resistance device is used in conjunction with a tungsten wire to heat and vapor deposit the target material. One of the vapor deposition devices can be selected or both vapor deposition devices can be used simultaneously.

9. The vacuum evaporation machine as described in claim 1, characterized in that: An ion source device (700) is also provided near the vapor deposition system. The ion source device (700) is located at the lower part of the carrier rotation system (100) and is used for cleaning the substrate. The ion source device (700) includes a first adjustment scale (710) and a second adjustment scale (720). The first adjustment scale (710) is used to record the vertical adjustment distance of the ion source device (700), and the second adjustment scale (720) is used to record the angle of adjustment of the ion source device (700) for convenient subsequent adjustment.

Citation Information

Patent Citations

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    CN112626486B

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    CN119800292A

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