Resin film-forming material and resin film

Abstract

The present invention relates to a resin film-forming material containing: a compound A containing two or more first groups and having an ester bond; and a compound B which contains two or more second groups capable of forming bonds with the first group, and which is capable of forming a resin containing an ester bond and a basic functional group by reacting with the compound A.

Description

Technical Field

[0001] The present invention relates to a resin film forming material and a resin film. Background Art

[0002] Semiconductor devices are generally manufactured through the following processes. First, a semiconductor wafer is attached to a dicing tape, and in this state, the semiconductor wafer is singulated into semiconductor chips (dicing process). After that, processes such as a pick-up process of picking up the semiconductor chips and a semiconductor chip bonding process of thermocompression bonding and bonding the picked-up semiconductor chips to a support member or the like via an adhesive (die bonding film) are performed to manufacture a semiconductor device.

[0003] In the dicing process, fine cutting debris (chips) generated by cutting the semiconductor wafer adhere to the circuit formation surface of the semiconductor wafer, resulting in connection failures in subsequent processes. Therefore, research is being conducted on setting a resin film (protective film) on the semiconductor wafer before the dicing process and removing the resin film (protective film) after dicing (for example, Patent Documents 1 and 2).

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2014-172932

[0007] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2018-129365 Summary of the Invention

[0008] Technical Problem to be Solved by the Invention

[0009] An object of the present invention is to provide a resin film forming material suitable for forming a resin film for protecting a semiconductor wafer during cutting the semiconductor wafer with a dicing blade. Another object of the present invention is to provide a resin film formed from the above resin film forming material.

[0010] Means for Solving the Technical Problem

[0011] The present invention relates to the following [1] to [4].

[0012] [1] A resin film forming material containing: Compound A, containing two or more first groups and having an ester bond; and Compound B, containing two or more second groups capable of forming a bond with the first group and capable of forming a resin containing an ester bond and a basic functional group by reacting with Compound A.

[0013] [2] The resin film forming material according to [1], wherein the first group is a (meth)acryloyloxy group and the second group is an amino group.

[0014] [3] The resin film forming material according to [1] or [2], wherein the basic functional group is -NH-.

[0015] [4] A resin film that protects a semiconductor wafer during cutting of the semiconductor wafer using a cutting blade, the resin film including a resin having an ester bond and a basic functional group.

[0016] Advantages of the Invention

[0017] According to the present invention, it is possible to provide a resin film forming material suitable for forming a resin film that protects a semiconductor wafer during cutting of the semiconductor wafer using a cutting blade. According to the present invention, it is possible to provide a resin film formed from the above resin film forming material. Detailed Embodiments

[0018] Hereinafter, embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

[0019] In this specification, a numerical range indicated by "~" represents a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In a numerical range described stepwise in this specification, the upper limit value or the lower limit value of a certain stepwise numerical range can be replaced with the upper limit value or the lower limit value of another stepwise numerical range. In the numerical range described in this specification, the upper limit value or the lower limit value of the numerical range can be replaced with the value shown in the examples. The individually described upper limit value and lower limit value can be arbitrarily combined. In an expression such as "A~B" for a numerical range, the numerical values A and B at both ends are included in the numerical range as the lower limit value and the upper limit value, respectively. In this specification, for example, a description such as "10 or more" means "10" and "a value exceeding 10", and this is the standard even when the numerical values are different. Also, for example, a description such as "10 or less" means "10" and "a value less than 10", and this is the standard even when the numerical values are different.

[0020] In this specification, "(meth)acryloyl" means at least one of acryloyl and methacryloyl. In this specification, "(poly)oxyalkylene" means at least one of oxyalkylene and polyoxyalkylene. Polyoxyalkylene is a group in which two or more alkylene groups are linked by an ether bond. The same applies to other similar expressions such as "(poly)oxyethylene".

[0021] In this specification, "A or B" includes either A or B, and may also include both.

[0022] Regarding the materials exemplified below, unless otherwise specified, one kind can be used alone or two or more kinds can be used in combination. When there are multiple substances corresponding to each component and no special designation is made, it represents the total amount of these multiple substances.

[0023] <Resin film forming material>

[0024] The resin film forming material of this embodiment contains: Compound A, which contains two or more first groups and has an ester bond; and Compound B, which contains two or more second groups capable of forming a bond with the first group and can form a resin containing an ester bond and a basic functional group through reaction with Compound A. The resin film forming material can be contained in a state where Compound A and Compound B have not reacted. For example, it can also be contained in a state where Compound A and Compound B are not mixed. Compound A and Compound B can be liquids or solids respectively in the resin film forming material.

[0025] The resin film forming material can be suitably used, for example, for forming a resin film for protecting a semiconductor wafer during cutting the semiconductor wafer with a cutting blade.

[0026] [Compound A]

[0027] Compound A can contain an ester bond in the first group and can also contain an ester bond as a functional group different from the first group. As the first group in Compound A, for example, (meth)acryloyloxy group; isocyanate group; cyclic ether group (oxiranyl (epoxyethyl, epoxy group), oxetanyl (oxetyl), tetrahydrofuranyl, tetrahydropyranyl, etc.); ethylenically unsaturated group (C═C), etc. can be cited. The number of the first groups in one molecule of Compound A is two or more, and can be three or more, four or more, or can be ten or less, eight or less, six or less, or five or less.

[0028] Compound A can be a compound containing two or more first groups and a linking group connecting these first groups. The linking group can contain, for example, (poly)oxyalkylene group. As the (poly)oxyalkylene group, (poly)oxyethylene group can be cited. The linking group can contain at least one skeleton selected from the group consisting of a pentaerythritol skeleton, a trimethylolpropane skeleton, and an isocyanurate skeleton.

[0029] The molecular weight or number average molecular weight of Compound A can be 150 or more, 500 or more, or 1000 or more, and can also be 50000 or less, 10000 or less, or 2000 or less. In this specification, the "number average molecular weight" is a polystyrene conversion value using a calibration curve based on standard polystyrene in gel permeation chromatography (GPC).

[0030] Compound A may be a compound containing two first groups or a compound containing two (meth)acryloyloxy groups. In this case, there is a tendency for the solubility of the resin in water to become higher.

[0031] The compound A containing two (meth)acryloyloxy groups may contain a structure represented by the following formula (a1).

[0032]

[0033] In formula (a1), R represents a hydrogen atom or a methyl group. X 1 represents an alkylene group. The number of carbon atoms of the alkylene group may be, for example, 2 or more, 10 or less, 6 or less, 4 or less, or 3 or less. The alkylene group may be, for example, an ethylene group (-CH2-CH2-).

[0034] n represents an integer of 1 or more. n may be, for example, 1 or more, 5 or more, 10 or more, 15 or more, or 20 or more, and may also be 50 or less, 45 or less, 40 or less, 35 or less, 30 or less, or 25 or less.

[0035] As commercially available products of the compound A having two (meth)acryloyloxy groups, for example, NK Ester A-1000 (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #1000 diacrylate), A-600 (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #600 diacrylate), A-400 (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #400 diacrylate), A-200 (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #200 diacrylate), 2G (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: diethylene glycol dimethacrylate), 3G (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: triethylene glycol dimethacrylate), 4G (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #200 dimethacrylate), 9G (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #400 dimethacrylate), 14G (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #600 dimethacrylate), 23G (manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: polyethylene glycol #1000 dimethacrylate), light acrylate 3EG-A (manufactured by KYOEISHA CHEMICAL Co., LTD., chemical name: triethylene glycol dimethacrylate), light acrylate 4EG-A (manufactured by KYOEISHA CHEMICAL Co., LTD., chemical name: polyethylene glycol #200 diacrylate), light acrylate 9EG-A (manufactured by KYOEISHA CHEMICAL Co., LTD., chemical name: polyethylene glycol #400 diacrylate), light acrylate 14EG-A (manufactured by KYOEISHA CHEMICAL Co., LTD.Manufactured by: LIGHT ESTER EG (manufactured by KYOEISHA CHEMICAL Co., Ltd., chemical name: polyethylene glycol #600 diacrylate), LIGHT ESTER 2EG (manufactured by KYOEISHA CHEMICAL Co., Ltd., chemical name: ethylene glycol dimethacrylate), LIGHT ESTER 3EG (manufactured by KYOEISHA CHEMICAL Co., Ltd., chemical name: triethylene glycol dimethacrylate), LIGHT ESTER 4EG (manufactured by KYOEISHA CHEMICAL Co., Ltd., chemical name: polyethylene glycol #200 dimethacrylate), LIGHT ESTER 9EG (manufactured by KYOEISHA CHEMICAL Co., Ltd., chemical name: polyethylene glycol #400 dimethacrylate), LIGHT ESTER 14EG (manufactured by KYOEISHA CHEMICAL Co., Ltd., chemical name: polyethylene glycol #600 dimethacrylate), FANCRYL FA-222A (manufactured by Showa Denko Materials co., Ltd., chemical name: diethylene glycol diacrylate), FANCRYL FA-232A (manufactured by Showa Denko Materials co., Ltd., chemical name: diethylene glycol diacrylate), FANCRYL FA-220A, FA-230A, FA-240A, FA-260A, FA-2100A, FA-2200A (all manufactured by Showa Denko Materials co., Ltd., chemical name: polyethylene glycol diacrylate), FANCRYL FA-222M (manufactured by Showa Denko Materials co., Ltd., chemical name: diethylene glycol dimethacrylate), FANCRYL FA-232M (manufactured by Showa Denko Materials co., Ltd., chemical name: diethylene glycol dimethacrylate), FANCRYL FA-220M, FA-230M, FA-240M, FA-260M, FA-2100M, FA-2200M (all manufactured by Showa Denko Materials co., Ltd., chemical name: polyethylene glycol dimethacrylate).

[0036] Compound A can be a compound containing 3 or more of the first groups, or a compound containing 3 or more (meth)acryloyloxy groups.

[0037] The compound A containing 3 or more (meth)acryloyloxy groups may be, for example, a compound represented by the following formula (a2).

[0038]

[0039] In formula (a2), R 1 represents a hydrogen atom or a methyl group, and X 2 represents an alkylene group. a, b, c, and d each independently represent an integer of 0 or more. When there are multiple Rs, they may be the same or different. The number of carbon atoms in the alkylene group represented by X 2 may be 2 or more, or may be 10 or less, 6 or less, or 3 or less. The alkylene group represented by X 2 may be, for example, an ethylene group (-CH2-CH2-). When there are multiple Xs 2 , they may be the same or different. The sum a + b + c + d of a, b, c, and d may be, for example, 1 or more, 5 or more, 10 or more, 15 or more, 20 or more, 25 or more, or 30 or more, or may be 60 or less, 55 or less, 50 or less, 45 or less, or 40 or less.

[0040] Examples of commercially available products of compound A having three or more (meth)acryloyloxy groups include NK Ester ATM-35E (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated pentaerythritol tetraacrylate), NK Ester A-TMPT-9EO (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated trimethylolpropane triacrylate), NK Ester AT-20E (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated trimethylolpropane triacrylate), NK Ester A-GLY-3E (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated glycerol triacrylate), NK Ester A-GLY-9E (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated glycerol triacrylate), NK Ester A-GLY-20E (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated glycerol triacrylate), and A-DPH-12E (manufactured by Shin Nakamura Chemical Industry Co., Ltd., chemical name: ethoxylated dipentaerythritol polyacrylate).

[0041] Compound A may be a compound that is soluble in water. The solubility of compound A in 100 g of water at 25°C may be 1 g or more, 5 g or more, or 10 g or more. The upper limit of the solubility is not particularly limited.

[0042] With respect to 100 parts by mass of the total content of compound A and compound B, the content of compound A may be 80 parts by mass or more, 85 parts by mass or more, or 90 parts by mass or more, and may also be 99 parts by mass or less, 95 parts by mass or less, or 90 parts by mass or less.

[0043] [Compound B]

[0044] The second group in Compound B is appropriately selected according to the type of the first group. The combination of the first group and the second group can be, for example, at least one first group selected from the group consisting of (meth)acryloyloxy group, isocyanate group, cyclic ether group (oxiranyl (oxirylethyl, epoxy group), oxetanyl (oxetyl), tetrahydrofuranyl, tetrahydropyranyl, etc.) and ethylenically unsaturated group (C═C) and at least one second group selected from the group consisting of amino group, substituted amino group (for example, substituted amino group (-NH-)) and mercapto group (-SH), or can be the combination of (meth)acryloyloxy group and amino group.

[0045] The number of the second groups in one molecule of Compound B is 2 or more, and can be 10 or less, 8 or less, 6 or less, 4 or less or 3 or less, or can also be 2. The number of the second groups in one molecule of Compound B can be the same as or different from the number of the first groups in one molecule of Compound A, or can be less than the number of the first groups in one molecule of Compound A.

[0046] Compound B can contain functional groups other than the second group. Examples of the functional groups other than the second group include alkylene group and -NH- (imino group) etc.

[0047] Compound B can be a compound containing 2 or more second groups and alkylene group, or can be a compound containing 2 or more second groups, alkylene group and -NH-, or can be a compound containing 2 or more amino groups, alkylene group and -NH-.

[0048] Compound B can be, for example, a compound represented by the following formula (b).

[0049] H2N-Y-NH2 (b)

[0050] Y represents a divalent group containing alkylene group. The divalent group containing the alkylene group represented by Y can contain -NH-. Compound B can be, for example, a compound represented by the following formula (b1).

[0051]

[0052] In formula (b), Z represents alkylene group. The number of carbon atoms of the alkylene group can be 1 or more, 2 or more or 3 or more, and can also be 10 or less, 8 or less, 6 or less or 4 or less.

[0053] As Compound B, for example, bis(3-aminopropyl)amine, norbornanediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, polyetheramine, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodiphenylether, 1,3-bis(3-aminophenoxy)benzene, diphenylamine, aminobenzylamine, and polyoxypropylene diamine can be cited.

[0054] Compound B can be a compound that shows solubility in water. The solubility of Compound B in 100 g of water at 25°C can be 1 g or more, 5 g or more, or 10 g or more. The upper limit of the solubility is not particularly limited.

[0055] The ratio of the number of moles of Compound B to the number of moles of Compound A (number of moles of Compound B / number of moles of Compound A) can be 0.40 or more, 0.60 or more, 0.80 or more, 1.00 or more, 1.20 or more, 1.40 or more, 1.60 or more, or 1.80 or more. The ratio of the number of moles of Compound B to the number of moles of Compound A (number of moles of Compound B / number of moles of Compound A) can be, for example, 10.00 or less, 8.00 or less, 6.00 or less, 4.00 or less, 3.00 or less, 2.50 or less, or 2.20 or less.

[0056] With respect to 100 parts by mass of the total content of Compound A and Compound B, the content of Compound B can be 1 part by mass or more, 5 parts by mass or more, 8 parts by mass or more, or 10 parts by mass or more. With respect to 100 parts by mass of the total content of Compound A and Compound B, the content of Compound B can be 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, or 8 parts by mass or less.

[0057] A resin containing an ester bond (-COO-) and a basic functional group is formed by the reaction of Compound B and Compound A. This resin can be used to protect a semiconductor wafer during cutting of the semiconductor wafer with a cutting blade.

[0058] Examples of the basic functional group can include -NH- and -NH2.

[0059] The resin can contain a structure represented by the following formula (c) formed by the reaction (Michael addition) of (meth)acryloyloxy and an amino group.

[0060]

[0061] In formula (c), * represents the bonding position to a carbon atom.

[0062] The resin can be obtained by a method including the step of reacting Compound A and Compound B in a reaction mixture containing Compound A and Compound B. That is, the resin is a reaction product of Compound A and Compound B. The reaction mixture of Compound A and Compound B can be obtained by mixing or kneading these compounds. Mixing and kneading can be appropriately carried out by combining common dispersers such as a blender, a mortar, a three-roll mill, a ball mill, and a bead mill.

[0063] The reaction can be carried out while heating as needed. When reacting Compound A and Compound B, the reaction temperature can be, for example, 0 °C or higher, 10 °C or higher, or 20 °C or higher, and can also be 100 °C or lower, 85 °C or lower, or 70 °C or lower. The time for maintaining the above reaction temperature can be, for example, 1.0 minute or longer, and can also be 60 minutes or shorter, 30 minutes or shorter, 10 minutes or shorter, 5 minutes or shorter, or 3 minutes or shorter.

[0064] A resin film containing the above resin can be formed, for example, by a method including the step of forming a resin-containing coating film and the step of curing the coating film. The method of forming the coating film is not particularly limited, and a spin coating method, a slit coating method, etc. can be used.

[0065] The thickness of the resin film can be, for example, 1 to 1000 μm, 3 to 500 μm, or 5 to 200 μm.

[0066] The resin film and the resin film forming material can further contain components other than the resin (other components). As other components, for example, a plasticizer; a tackifier such as a thickener; an antioxidant; a colorless dye; a sensitizer; an adhesion improver such as a coupling agent; a polymerization inhibitor; a light stabilizer; an antifoaming agent; a filler; a chain transfer agent; a thixotropy imparting agent; a flame retardant; a release agent; a surfactant; a lubricant; an antistatic agent and other additives can be cited. These additives can use known additives. When containing other components, based on the total amount of the resin film or the total amount of the resin film forming material, the total content of other components can be 0 to 95% by mass, 0.01 to 50% by mass, or 0.1 to 10% by mass.

[0067] The resin film can function as a protective film for preventing fine cutting chips (fragments) generated by cutting a semiconductor wafer from adhering to the circuit formation surface of the semiconductor wafer.

[0068] The resin film contains a resin containing an ester bond and a basic functional group. The resin reacts with water, undergoes hydrolysis of the ester bond in the presence of the basic functional group, and is low-molecularized. The above resin is low-molecularized, thereby improving the solubility in water compared to the above resin before reacting with water. Therefore, after cutting the semiconductor wafer with a cutting blade, the resin film reacts with water, and thus can be easily removed using a water-containing solvent.

[0069] As a method of reacting a resin with water, a method of immersing a resin film in water is considered. The temperature of the water when reacting the resin with water can be, for example, 5°C or higher, 10°C or higher, 15°C or higher, 20°C or higher, 25°C or higher, 35°C or higher, 45°C or higher, or 55°C or higher, and can also be 80°C or lower or 70°C or lower. The higher the temperature of the water when reacting the resin with water, the easier it is for the resin to dissolve in a shorter time.

[0070] The time when reacting the resin with water can be, for example, 5 minutes or longer, 10 minutes or longer, 30 minutes or longer, 60 minutes or longer, 90 minutes or longer, or 120 minutes or longer, and can also be 150 minutes or shorter, 120 minutes or shorter, 90 minutes or shorter, 60 minutes or shorter, 45 minutes or shorter, or 30 minutes or shorter.

[0071] Regarding the resin film, for example, by adjusting the composition of the resin, the time to dissolve in water can be adjusted. For example, by adjusting the number of the first groups in compound A in the resin film forming material, the solubility in water can be adjusted. If the number of the first groups in compound A decreases (for example, the number of the first groups in compound A is set to 2), there is a tendency to dissolve in water in a shorter time.

[0072] Regarding the resin film, for example, by adjusting the temperature of the water when reacting the resin with water, etc., the time to dissolve in water can be adjusted. From the viewpoint of suppressing the temperature rise at the contact part between the semiconductor wafer or the resin film and the cutting blade, sometimes while applying cooling water (cutting water) to these contact parts, cutting is performed using the cutting blade. When the temperature of the water is low, the resin film has a tendency not to dissolve easily in water, so even for cutting using cooling water, it can fully function as a protective film on the semiconductor wafer.

[0073] Examples

[0074] Hereinafter, the present invention will be described more specifically by way of examples. However, the present invention is not limited to these examples.

[0075] <Materials Used>

[0076] Compound A:

[0077] ·NK Ester ATM-35E (product name, manufactured by Shin Nakamura Chemical Industry Co., LTD., chemical name: ethoxylated pentaerythritol tetraacrylate)

[0078] · NK Ester A-1000 (Product name, manufactured by Shin Nakamura Chemical Industry Co., LTD., Chemical name: Polyethylene glycol #1000 diacrylate)

[0079] Compound B:

[0080] · Bis(3-aminopropyl)amine (manufactured by FUJIFILM Wako Pure Chemical Corporation)

[0081] <Manufacture of Resin 1>

[0082] 9.35 parts by mass of NK Ester ATM-35E and 0.65 parts by mass of bis(3-aminopropyl)amine were compounded in a 30 mL plastic ointment jar. Then, using a planetary mixer (THINKY MIXER ARE-310, manufactured by THINKY CORPORATION.), the preparation was stirred at a rotation speed of 2000 rpm for 1.5 minutes to obtain Resin 1.

[0083] <Manufacture of Resin 2>

[0084] 8.78 parts by mass of NK Ester ATM-35E and 1.22 parts by mass of bis(3-aminopropyl)amine were formulated in a 30 mL plastic ointment jar. Then, using a planetary mixer (THINKY MIXER ARE-310, manufactured by THINKY CORPORATION.), the preparation was stirred at a rotation speed of 2000 rpm for 1.5 minutes to obtain Resin 2.

[0085] <Manufacture of Resin 3>

[0086] 8.98 parts by mass of NK Ester A-1000 preheated to 60 °C and 1.02 parts by mass of bis(3-aminopropyl)amine were compounded in a 30 mL plastic ointment jar. Then, using a planetary mixer (THINKY MIXER ARE-310, manufactured by THINKY CORPORATION.), the preparation was stirred at a rotation speed of 2000 rpm for 1.5 minutes to obtain Resin 3.

[0087] [Table 1]

[0088]

[0089] <Evaluate the solubility of the resin in water over time>

[0090] The bottom surface of a 35 mm Φ petri dish was coated with 0.2 parts by mass of the obtained resin, and it was cured for 1 day at room temperature (25 °C) in a desiccator. After curing, the resin was immersed in water by putting 2.0 parts by mass of pure water in the petri dish. After being immersed for the specified time, it was shaken for 10 seconds immediately, and the aqueous solution was pipetted to be homogenized. 0.1 part by mass of the supernatant was taken and 1 1H-NMR measurement was carried out in 0.6 mL of heavy water. In all samples, the ratio of the signal integral value of polyethylene glycol (PEG) around 3.71 ppm to the signal integral value of water around 4.79 ppm was calculated. The integral ratio of the signal of PEG to the signal of water for the samples when Resins 1-3 were all dissolved in water was set as 100% of the dissolution amount of the resin, and the dissolution rate within each immersion time was calculated.

[0091] In Resin 1, after being immersed in water at 25 °C for 2 hours, 4.0 parts by weight of pure water was further added. Resin 1 started to liquefy 12 hours after the start of water immersion at 25 °C.

[0092] When Resin 2 was immersed in water at 25 °C, the dissolution rate was 24.88% after 60 minutes and 100.00% after 120 minutes. When Resin 2 was immersed in water at 60 °C, the dissolution rate was 100.00% after 45 minutes.

[0093] When Resin 3 was immersed in water at 7 °C, the dissolution rate was 95.50% after 45 minutes and 100.00% after 12 minutes. When Resin 3 was immersed in water at 25 °C, the dissolution rate was 17.61% after 10 minutes, 48.03% after 15 minutes, and 100.00% after 30 minutes.

[0094] If the amount of Compound B relative to Compound A is increased, the time to dissolve in water becomes shorter. If the amount of Compound B relative to Compound A is decreased, the time to dissolve in water becomes longer (comparison between Resin 1 and Resin 2). If the number of acryloyl groups in each molecule of Compound A having an acryloyl group is decreased, the time to dissolve in water becomes shorter. If the number of acryloyl groups in each molecule of Compound A having an acryloyl group is increased, the time to dissolve in water becomes longer (comparison between Resin 1 and Resin 3). It was confirmed that by increasing the water temperature, it dissolves in water in a shorter time. The above shows that according to the amount of Compound B relative to Compound A, the number of acryloyl groups in one molecule of Compound A, the temperature of water during immersion, etc., the time to dissolve in water can be adjusted.

Claims

1. A resin film-forming material, comprising: Compound A, having two or more first groups and having an ester bond; and Compound B, having two or more second groups capable of forming a bond with the first group and capable of forming a resin containing an ester bond and a basic functional group by reacting with Compound A.

2. The resin film-forming material according to claim 1, wherein the first group is a (meth)acryloyloxy group, the second group is an amino group.

3. The resin film-forming material according to claim 1 or 2, wherein the basic functional group is -NH-.

4. A resin film for protecting a semiconductor wafer during cutting of the semiconductor wafer with a cutting blade, the resin film comprising a resin having an ester bond and a basic functional group.

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