Wafer automatic brushing method, device, electronic equipment and computer storage medium

Abstract

The application discloses a wafer automatic brushing method and device, electronic equipment and computer storage medium, comprising: obtaining the equipment parameters of a wafer brushing device and first control parameters for brushing the wafer; determining the number of times each region of the wafer is brushed in a corresponding repetition period when the wafer brushing device is controlled according to the first control parameters; if the number of times each region of the wafer is brushed in the corresponding repetition period meets the parameter update condition, the first control parameters are updated to obtain second control parameters, so that the number of times each region of the wafer is brushed in the corresponding repetition period when the wafer brushing device is controlled according to the second control parameters does not meet the parameter update condition. The application can ensure the brushing effect of the wafer.

Description

[0001] This application claims priority to application number "2024115382731" filed on 2024-10-31, entitled "Wafer Cleaning Method, Apparatus, Electronic Device and Computer Storage Medium", the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] This application relates to the field of semiconductor processing technology, and in particular to an automatic wafer cleaning method, apparatus, electronic device, and computer storage medium. Background Technology

[0003] In the vertical or horizontal brushing module of the post-cleaning unit of Chemical Mechanical Polishing (CMP) equipment, a brushing material is usually used to brush the wafer surface by coating the outer surface of the roller brush. The surface of the brushing material has periodically arranged brushing surfaces. During brushing, the wafer is brushed by contacting and rubbing the brushing surfaces.

[0004] However, due to the periodic arrangement of the brushing surfaces, when the roller brush speed and the wafer speed form certain specific ratios, some locations on the wafer will never be brushed by the brushing surfaces, or the distribution of the number of times different locations on the wafer are brushed by the brushing surfaces will be significantly uneven, resulting in contaminants on the wafer surface not being fully brushed away. Summary of the Invention

[0005] In view of this, this application provides an automatic wafer cleaning method, apparatus, electronic device, and computer storage medium to at least partially solve the above-mentioned technical problems.

[0006] This application provides a method for automatically cleaning a wafer, comprising: acquiring equipment parameters of a wafer cleaning apparatus and first control parameters for cleaning the wafer; determining, based on the equipment parameters and the first control parameters, the number of times each region of the wafer is cleaned within a corresponding repetition cycle when the wafer cleaning apparatus is controlled to clean the wafer according to the first control parameters, wherein the repetition cycle indicates the cycle in which the wafer cleaning apparatus cleans a corresponding region on the wafer; if the number of times each region of the wafer is cleaned within the corresponding repetition cycle meets a parameter update condition, then updating the first control parameters to obtain a second control parameter, so that when the wafer cleaning apparatus is controlled to clean the wafer according to the second control parameter, the number of times each region of the wafer is cleaned within the corresponding repetition cycle does not meet the parameter update condition.

[0007] Optionally, the equipment parameters include: the length of the brushing surface of the wafer brushing device and the length of the roller brush repeating unit, wherein the brushing surfaces on the wafer brushing device are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the brushing surface and the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer brushing device; the first control parameters include: the wafer rotation speed and the roller brush rotation speed of the wafer brushing device when brushing the wafer.

[0008] Optionally, the process of determining the number of times each position of the wafer is brushed within a repetition cycle when the wafer brushing device brushes the wafer according to the equipment parameters and the first control parameters may further include: determining, according to the equipment parameters, wafer repeating units on each circumference of the wafer that correspond to the roller brush repeating unit.

[0009] Based on the first control parameter, the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit is determined, and the number of times the brushed surface passes through each position is taken as the number of times the brushing surface passes through that position, thus obtaining the number of times each position of the wafer is brushed within the repeating cycle.

[0010] Optionally, the process of determining the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit according to the first control parameter, and taking the number of times the brushed surface passes through each position as the brushing count for that position, to obtain the number of times each position of the wafer is brushed within the repeating cycle, may further include: when the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit is not an integer, re-determining the position of the wafer repeating unit relative to the roller brush repeating unit based on the decimal part of the number of passes; obtaining the number of times the brushed surface passes through each position when the position of the roller brush repeating unit is aligned with the starting position of the roller brush repeating unit for the second time, taking the number of times the brushed surface passes through each position as the brushing count for that position, to obtain the number of times each position of the wafer is brushed within the repeating cycle.

[0011] Optionally, the parameter update condition includes: there is a position in the wafer during the repeat cycle where the number of washes is 0.

[0012] Optionally, the process of updating the first control parameter to obtain the second control parameter may further include: adjusting the wafer rotation speed according to the wafer rotation speed when the number of brushing cycles within the repeat cycle is not zero to obtain a third rotation speed; and / or, adjusting the roller brush rotation speed according to the rotation speed of the wafer brushing device when the number of brushing cycles within the repeat cycle is not zero to obtain a fourth rotation speed.

[0013] Optionally, the process of updating the first control parameter to obtain the second control parameter may further include: adjusting the wafer rotation speed and the roller brush rotation speed according to the proportional relationship between the wafer rotation speed and the rotation speed of the wafer brushing device when the number of brushing cycles is not zero in the repeat cycle, so as to at least ensure that the number of brushing cycles is not zero in the repeat cycle.

[0014] Optionally, the parameter update condition includes: the difference in the number of times the position on the wafer that is brushed the most times during the repeat cycle is greater than a preset quantity threshold.

[0015] Optionally, the process of updating the first control parameter to obtain the second control parameter may further include: determining multiple simulated control parameters based on the equipment parameters, the rotational speed range of the wafer brushing device, and the rotational speed range of the wafer, wherein each simulated control parameter includes at least one of the rotational speed of the wafer brushing device and the rotational speed of the wafer, and is different from other simulated control parameters among the multiple simulated control parameters; calculating the number of times each region of the wafer is brushed in the corresponding repetition cycle under the control of the multiple simulated control parameters, and obtaining multiple simulated brushing results; calculating the variance of the number of brushings of each region of the wafer in the corresponding repetition cycle corresponding to the multiple simulated brushing results; updating the first control parameter to obtain the second control parameter based on the simulated control parameter corresponding to the simulated brushing result with the smallest variance of the number of brushings and where the number of brushings of each region of the wafer in the corresponding repetition cycle is not 0.

[0016] Optionally, the process of determining multiple analog control parameters based on the equipment parameters, the rotational speed range of the wafer brushing device, and the rotational speed range of the wafer may further include: creating rotational noise based on the rotational speed range of the wafer brushing device and the rotational speed range of the wafer; and determining multiple analog control parameters based on the rotational noise, the equipment parameters, the rotational speed range of the wafer brushing device, and the rotational speed range of the wafer.

[0017] Optionally, the automatic wafer cleaning process may further include: when the surface of the wafer to be cleaned is perpendicular to the horizontal plane, if the second control parameter indicates that the speed at which the wafer cleaning device is rotated is less than the speed at which the outer edge of the wafer is rotated, or that the speed at which the wafer is rotated is greater than a first speed threshold, a speed reduction warning is issued; when the surface of the wafer to be cleaned is parallel to the horizontal plane, if the second control parameter indicates that the speed at which the wafer cleaning device is rotated is less than the speed at which the outer edge of the wafer is rotated, or that the speed at which the wafer is rotated is greater than a second speed threshold, a speed reduction warning is issued.

[0018] A second aspect of this application provides an automatic wafer cleaning device, comprising: an acquisition module for acquiring equipment parameters of the wafer cleaning device and first control parameters for cleaning the wafer; a determination module for determining, based on the equipment parameters and the first control parameters, the number of times each location of the wafer is cleaned within a repetition cycle when the wafer cleaning device cleans the wafer, wherein the repetition cycle indicates the minimum repetition cycle for cleaning the wafer; and an adjustment module for updating the first control parameters to obtain a second control parameter if the number of times each region of the wafer is cleaned within the corresponding repetition cycle meets the parameter update condition, so as to control the number of times each region of the wafer is cleaned within the corresponding repetition cycle to not meet the parameter update condition when the wafer cleaning device cleans the wafer according to the second control parameter.

[0019] A third aspect of this application provides an electronic device, including: a processor, a communication interface, a memory, and a communication bus, wherein the processor, the memory, and the communication interface communicate with each other via the communication bus; the memory is used to store at least one executable instruction, which causes the processor to perform the operation corresponding to the method described in the first aspect of the embodiment.

[0020] The fourth aspect of this application provides a computer storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described in the first aspect of the embodiments.

[0021] The fifth aspect of this application provides a computer program product including computer instructions that instruct a computing device to perform an operation corresponding to the method described in the first aspect of the embodiments.

[0022] In this application, by analyzing the wafer washing situation during the repetition cycle, it is determined whether the first control parameter used to wash the wafer can wash the wafer sufficiently and can obtain a relatively accurate result, thereby ensuring that the wafer can be washed sufficiently. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0024] Figure 1 This is a flowchart of the steps of an automatic wafer cleaning method according to an embodiment of this application;

[0025] Figure 2 This is a schematic diagram of a wafer washing scenario applicable to embodiments of this application;

[0026] Figure 3 This is a schematic diagram of a roller brush repeating unit according to an embodiment of this application;

[0027] Figure 4 This is a schematic diagram of a wafer being brushed according to an embodiment of this application;

[0028] Figure 5 This is a schematic diagram of a wafer brushing apparatus applicable to embodiments of this application;

[0029] Figure 6 This is a schematic diagram of a brushing repetition cycle included in an embodiment of this application;

[0030] Figure 7 This is a schematic diagram of the variance of the number of brushing cycles in each region of the wafer within the corresponding brushing cycle according to an embodiment of this application.

[0031] Figure 8 This is a schematic diagram of the simulated scrubbing results according to an embodiment of this application;

[0032] Figure 9 This is a flowchart of the steps of a wafer cleaning scheme generation method according to an embodiment of this application;

[0033] Figure 10 This is a flowchart of the steps of a wafer brushing solution generation method according to another embodiment of this application;

[0034] Figure 11 This application presents a drawing illustrating the brushing effect corresponding to the position of the brushing cycle.

[0035] Figure 12 This is a flowchart of the steps in a wafer cleaning scheme generation method according to another embodiment of this application;

[0036] Figure 13 This is a schematic diagram of an automatic wafer cleaning device according to an embodiment of this application;

[0037] Figure 14 This is a schematic diagram of an electronic device according to an embodiment of this application. Detailed Implementation

[0038] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art should fall within the protection scope of the embodiments of this application.

[0039] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0040] It should be understood that although the terms first, second, third, etc., may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."

[0041] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In the absence of conflict, the following embodiments and their technical features can be combined with each other.

[0042] Figure 1 A schematic diagram of an embodiment of the automatic wafer cleaning method of this application is shown. Figure 1 As shown, the automated wafer cleaning method includes the following steps:

[0043] Step 101: Obtain the equipment parameters of the wafer brushing device and the first control parameters for brushing the wafer.

[0044] Step 102: Based on the equipment parameters and the first control parameters, determine the number of times each area of ​​the wafer is brushed within the corresponding repetition cycle when the wafer brushing device is controlled to brush the wafer according to the first control parameters.

[0045] Step 103: If the number of times each region of the wafer is brushed in the corresponding repetition cycle meets the parameter update condition, then the first control parameter is updated to obtain the second control parameter.

[0046] Since semiconductor processing is primarily automated, the wafer rinsing process typically involves controlling the equipment using control parameters. To ensure thorough wafer rinsing, the equipment parameters of the wafer rinsing apparatus and the first control parameters for rinsing the wafer are first obtained. The equipment parameters include the apparatus's own physical parameters. Without parameter control, the rinsing process uses the first control parameters. It is necessary to verify whether the equipment can adequately rinsing the wafer under the control of these first control parameters. Therefore, based on the equipment parameters and the first control parameters, the number of times each area of ​​the wafer is rinsed within a corresponding repetition cycle when the wafer rinsing apparatus is controlled by the first control parameters is determined. The repetition cycle indicates the rinsing repetition cycle for rinsing corresponding areas of the wafer, the wafer rotation repetition cycle, and the roller brush rotation repetition cycle during wafer rinsing. If the number of times each region of the wafer is brushed within the corresponding repetition cycle meets the parameter update condition, then the first control parameter is updated to obtain the second control parameter. When the wafer brushing device is controlled to brush the wafer according to the second control parameter, if the number of times each region of the wafer is brushed within the corresponding repetition cycle does not meet the parameter update condition, the parameter update condition is used to characterize whether the brushing effect resulting from the number of times each region of the wafer is brushed within the corresponding repetition cycle is not as expected.

[0047] In this embodiment of the application, by analyzing the wafer being brushed during the repetition cycle, it is determined whether the first control parameter used to brush the wafer can sufficiently brush the wafer, thus providing a more accurate result and ensuring that the wafer can be sufficiently brushed.

[0048] Specifically, the parameter update conditions may include: there is a position in the wafer that has been brushed 0 times during the repeat cycle.

[0049] For example, such as Figure 2 and Figure 3 As shown, Figure 2Below, multiple repeating circumferences 21 are marked with colors. Taking a certain circumference 21 on wafer 2 as an example, the circumference 13 of the roller brush 1 of the wafer cleaning device is used to clean this circumference 21. During the cleaning process, wafer 2 rotates at a fixed speed included in the first control parameter, and the roller brush 1 of the wafer cleaning device also rotates at another fixed speed included in the first control parameter. Multiple cleaning surfaces 12 provided on the surface of the roller brush 1 of the wafer cleaning device will repeatedly clean the positions on wafer 2 in multiple repeating cycles. Therefore, based on the situation within one repeating cycle, the cleaning situation of wafer 2 with the first control parameter can be deduced. If there is a position that has been cleaned 0 times within the repeating cycle, the first control parameter is updated to obtain the second control parameter.

[0050] It should be noted that, Figure 2 The diagram shows the rotation cycle of the roller brush 1 in the three wafer washing devices.

[0051] In this embodiment, by analyzing the wafer washing process within a repetition cycle, it is determined whether the first control parameter used for washing the wafer can adequately wash the wafer, resulting in a relatively accurate assessment. Furthermore, when there are positions on the wafer that have been washed 0 times within a repetition cycle, the first control parameter is updated to obtain a second control parameter. When the wafer washing device is controlled to wash the wafer according to the second control parameter, there are no positions on the wafer that have been washed 0 times per unit time, ensuring the effectiveness of wafer washing.

[0052] It should be noted that if the difference in the number of times each position on the wafer is brushed within a repetition cycle is too large, the wafer brushing effect will also be unsatisfactory. Therefore, the parameter update condition can also include: the difference in the number of times the position on the wafer brushed the most times within a repetition cycle is greater than a preset quantity threshold. That is, if the difference in the number of times the position on the wafer brushed the most times within a repetition cycle is greater than the preset quantity threshold, the first control parameter is updated to obtain the third control parameter. When brushing the wafer according to the third control parameter, the difference in the number of times each position on the wafer is brushed within a repetition cycle is less than or equal to the quantity threshold, further ensuring the effectiveness of wafer brushing.

[0053] Specifically, the parameters of the wafer cleaning apparatus include: the length of the cleaning surface 12 of the roller brush 1 of the wafer cleaning apparatus and the length of the roller brush repeating unit 11, wherein the cleaning surfaces 12 on the roller brush 1 of the wafer cleaning apparatus are arranged periodically, and the length of the roller brush repeating unit 11 is the sum of the length of the cleaning surface 12 and the shortest distance between adjacent cleaning surfaces 12 in the rotation direction of the roller brush 1 of the wafer cleaning apparatus. The first control parameters include: the wafer rotation speed of the wafer 2 and the roller brush rotation speed of the wafer cleaning apparatus when cleaning the wafer 2.

[0054] The roller brush 1 of the wafer washing device can be like Figure 3 As shown, a plurality of brushing surfaces 12 are provided on its surface, and the plurality of brushing surfaces 12 are arranged periodically, with the same spacing between the brushing surfaces 12 on the same circumference.

[0055] Specifically, the process of determining the number of times each location on the wafer is brushed within a repetition cycle when the wafer brushing device brushes the wafer based on equipment parameters and the first control parameters may also include:

[0056] Based on the equipment parameters, for each circumference on the wafer, the wafer repeating unit corresponding to the roller brush repeating unit is determined. Based on the first control parameters, the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit is determined, and the number of times the brushed surface passes through each position is taken as the brushing count for that position, thus obtaining the number of times each position on the wafer is brushed within the repeating cycle.

[0057] like Figure 2 As shown, when the roller brush 1 of the wafer cleaning device contacts the wafer 2, the position of the roller brush repeating unit 11 on the wafer 2 is the wafer repeating unit 22. Based on the wafer rotation speed and roller brush speed included in the first control parameters, the number of times the cleaning surface 12 passes through the wafer repeating unit 22 in the first rotation cycle of the roller brush 1 of the wafer cleaning device can be determined. Then, based on the number of cycles, the wafer rotation speed, and the roller brush speed, the number of times the wafer repeating unit 22 is cleaned by the roller brush repeating unit 11 in the second rotation cycle of the wafer 2 can be determined. From this, the number of times each position of the wafer 2 is cleaned within the repeating cycle can be deduced. A schematic diagram of the wafer 2 being cleaned can be shown below. Figure 4 , Figure 5 As shown, each time the roller repeating unit 11 rotates once (Loop), the corresponding position on the wafer repeating unit 22 is brushed.

[0058] It should be noted that the calculated number of cycles may not be an integer. When the number of cycles is not an integer, after the roller brush 1 of the wafer brushing device rotates once, the position of the wafer repeating unit 22 relative to the roller brush repeating unit 11 needs to be re-determined based on the decimal part of the number of cycles. When the starting position of the wafer repeating unit 22 is aligned with the starting position of the roller brush repeating unit 11 for the second time, it is considered as a brushing repeating cycle.

[0059] Specifically, the process of updating the first control parameter to obtain the second control parameter may further include: adjusting the wafer rotation speed according to the wafer rotation speed when the number of brushing cycles is not zero within the repetition cycle to obtain a third rotation speed, and / or adjusting the roller brush rotation speed according to the rotation speed of the wafer brushing device when the number of brushing cycles is not zero within the repetition cycle to obtain a fourth rotation speed.

[0060] After analyzing the wafer brushing process of the wafer brushing device according to the first control parameter, if there is a position in the wafer where the number of brushings is 0 within the repetition cycle, the specific values ​​of the wafer rotation speed and the rotation speed of the wafer brushing device when the number of brushings in the repetition cycle is not 0 can be obtained through analysis. Then, the first control parameter is updated with the specific values, so that the updated second control parameter can brush the wafer more accurately.

[0061] In addition, the process of updating the first control parameter to obtain the second control parameter may also include: adjusting the wafer rotation speed and the roller brush speed according to the proportional relationship between the wafer rotation speed and the rotation speed of the wafer brushing device when the number of brushes in the cycle brushing is not 0, so as to at least ensure that the number of brushes in the cycle brushing is not 0.

[0062] After analyzing the wafer brushing process of the wafer brushing device based on the first control parameter, if there are positions on the wafer where the number of brushings is 0 within a repetition cycle, the proportional relationship between the wafer rotation speed and the rotation speed of the wafer brushing device can be obtained by analysis when the number of brushings within the repetition cycle is not 0. For example, if the ratio between the wafer rotation speed and the rotation speed of the wafer brushing device is 1:4.3, and the number of brushings within the repetition cycle is not 0, then the wafer rotation speed can be adjusted to 1 rpm and the roller brush speed can be adjusted to 2 rpm. Updating the first control parameter by using the proportional relationship between the wafer rotation speed and the rotation speed of the wafer brushing device provides greater flexibility.

[0063] Figure 6 This is a schematic diagram of the brush surface arrangement of a roller brush according to an embodiment of this application. Figure 6The diagram shows three brushing cycle positions: positions 3, 4, and 5. Position 3 is the center of the brushing surface, position 4 is the tangent position of the brushing surface in the rotation direction, and position 5 is the shortest distance position between the brushing surface and the brushing surface adjacent to it in the rotation direction of the wafer brushing device. The distance between the roller brush repeating units corresponding to positions 3 and 4 is the same, but the length of the brushing surface at position 4 is less than the length of the brushing surface at position 3, and the length of the roller brush repeating unit corresponding to position 5 is the shortest. It can be seen that during the rinsing process of wafer 2, when the circumference of wafer 2 passes through the rinsing surface 12 on the roller brush 1 of the wafer rinsing device, the circumference passing through the rinsing surface 12 with the fewest passes is the circumference between positions 3 and 4, and the circumference passing through the rinsing surface 12 with the most passes is the circumference between positions 4 and 5. Among them, position 4 is tangent to the rinsing surface 12 between the two adjacent rinsing surfaces it passes through. After passing through position 4, the number of circumferences passing through the rinsing surface 12 increases. Position 5 has the shortest length of the roller brush repeating unit when the rinsing surface 12 is passed through the most. Therefore, by analyzing positions 3, 4, and 5, the wafer rinsing situation is obtained as the threshold of all circumferences in the entire wafer 2.

[0064] In one possible implementation, the process of updating the first control parameter to obtain the second control parameter may further include:

[0065] Based on the equipment parameters, the rotational speed range of the wafer brushing device, and the rotational speed range of the wafer, multiple simulation control parameters are determined. Under the control of these multiple simulation control parameters, the number of times each region of the wafer is brushed in the corresponding repetition cycle is calculated, resulting in multiple simulation brushing results. The variance of the number of brushings for each region of the wafer in the corresponding repetition cycle corresponding to each of the multiple simulation brushing results is calculated. The simulation control parameters corresponding to the simulation brushing results with the smallest variance in the number of brushings and where the number of brushings for each region of the wafer in the corresponding repetition cycle is not zero are used to update the first control parameter, thus obtaining the second control parameter.

[0066] To determine the second control parameters for controlling the wafer brushing apparatus and wafer rotation speed, it is first necessary to define the equipment parameters of the wafer brushing apparatus, the rotation speed range of the wafer brushing apparatus, and the rotation speed range of the wafer. The equipment parameters of the wafer brushing apparatus include the number of protrusions that the surface of the wafer brushing apparatus passes through in one revolution along the brushing direction. Then, multiple rotation speeds of the wafer brushing apparatus and multiple rotation speeds of the wafer are selected within the rotation speed ranges of the wafer brushing apparatus and the wafer, thereby obtaining multiple simulated control parameters. After obtaining multiple simulated control parameters, the wafer is simulated to be brushed according to each simulated control parameter. Then, during the simulated brushing process, the number of times each region of the wafer is brushed in the corresponding repetition cycle is obtained to obtain multiple simulated brushing results. Specifically, the number of times each region of the wafer is brushed within its corresponding repetition cycle can be normalized. The highest number of brushes for each region within its corresponding repetition cycle is set as 1. The normalized result is obtained by dividing the number of brushes for each region within its corresponding repetition cycle by the highest number of brushes. This normalized result is then used as the simulated brushing result. The variance of the number of brushes for each region within its corresponding repetition cycle is then calculated for each of the multiple simulated brushing results. The variance of the number of brushes for each region within the repetition cycle includes the total number of brushing repetition cycles. Figure 7 As shown. Then, based on the simulated brushing results that minimize the variance of the brushing count and ensure that the number of brushing counts for each region of the wafer is not zero within the corresponding repetition cycle, the first control parameter is updated to obtain the second control parameter. The simulated brushing results can be shown as follows: Figure 8 As shown, through Figure 8 It can be seen that the uniformity of wafer cleaning is related to the rotation speed of the wafer cleaning device and the rotation speed of the wafer. The higher the gray value, the better the uniformity of cleaning. The uniformity of cleaning can also be taken into account when determining the rotation speed of the wafer cleaning device and the rotation speed of the wafer.

[0067] Specifically, when calculating multiple simulated scrubbing results based on multiple simulated control parameters, the same principle can be applied. Figure 6 By averaging the variances of the three brushing cycles over different brushing cycles, the results can be made more accurate.

[0068] It should be noted that each simulated control parameter includes at least one of the rotational speed of the wafer brushing device and the rotational speed of the wafer, which is different from other simulated control parameters among the multiple simulated control parameters, so as to avoid duplication among multiple simulated control parameters.

[0069] In this embodiment of the application, the results of wafer brushing are simulated by calculating multiple simulation control parameters. This allows for a direct understanding of how the wafer is brushed under different combinations of the rotation speed of the wafer brushing device and the wafer's rotation speed. Consequently, it is easier to select a more suitable rotation speed of the wafer brushing device and the wafer's rotation speed for brushing the wafer.

[0070] In one possible implementation, the process of determining multiple analog control parameters based on the equipment parameters of the wafer brushing apparatus, the rotational speed range of the wafer brushing apparatus, and the rotational speed range of the wafer may further include:

[0071] Rotational noise is created based on the rotational speed range of the wafer brushing device and the rotational speed range of the wafer. Then, multiple analog control parameters are determined based on the rotational noise, the equipment parameters of the wafer brushing device, the rotational speed range of the wafer brushing device, and the rotational speed range of the wafer.

[0072] Because the rotational speed of the wafer cleaning device and the wafer rotational speed may fluctuate during the actual cleaning process, rotational noise can be incorporated into the simulation. For example, the rotational noise can be determined based on the rotational speed range of the wafer cleaning device and the wafer rotational speed range, i.e., the upper and lower boundary rotational speeds of the wafer cleaning device and the wafer. Multiple simulation control parameters are then determined by combining the rotational noise with the equipment parameters of the wafer cleaning device and the rotational speed ranges of the wafer cleaning device and the wafer.

[0073] In this embodiment of the application, by adding rotational noise during the determination of multiple simulation control parameters, the accuracy of the simulation can be improved, thereby improving the accuracy of determining the rotational speed of the wafer brushing device and the rotational speed of the wafer.

[0074] In one possible implementation, the automated wafer washing process may also include:

[0075] When the surface of the wafer being cleaned is perpendicular to the horizontal plane, if the second control parameter indicates that the rotation speed of the wafer cleaning device is less than the rotation speed of the outer edge of the wafer, or the rotation speed of the wafer is greater than the first speed threshold, a speed reduction warning is issued. When the surface of the wafer being cleaned is parallel to the horizontal plane, if the second control parameter indicates that the rotation speed of the wafer cleaning device is less than the rotation speed of the outer edge of the wafer, or the rotation speed of the wafer is greater than the second speed threshold, a speed reduction warning is issued.

[0076] There are two scenarios for wafer cleaning: one where the wafer is placed perpendicular to the horizontal plane, and the other where the wafer is placed parallel to the horizontal plane. During the cleaning process, if the rotation speed is too high, it can easily cause a speed drop. Therefore, it is necessary to limit the wafer's rotation speed. In addition, if the rotation speed of the wafer cleaning device is less than the speed at which the outer edge of the wafer is controlled to rotate, there is also a risk of speed drop. Therefore, when the above situations occur, a speed drop warning needs to be issued to indicate that this second control parameter is at risk.

[0077] It should be noted that the first speed threshold is less than the second speed threshold.

[0078] In this embodiment of the application, the safety of wafer washing can be improved by providing different speed drop warning conditions in different washing scenarios.

[0079] See Figure 9 Another embodiment of this application provides a method for generating a wafer washing scheme, including the following steps:

[0080] Step 201: Receive the input first control parameter, which is used to control the roller brush of the wafer brushing device to brush the wafer.

[0081] In this embodiment, the wafer cleaning device can be a horizontal or vertical cleaning device, and includes a housing, a support assembly, a roller brush, and a spraying assembly. The housing has a receiving cavity into which the wafer can be placed for cleaning, and the housing also provides a stable mounting base for the internal structure. The wafer cleaning device also includes a support assembly. The support assembly is disposed within the housing, supporting and driving the wafer to rotate.

[0082] When the wafer cleaning device is horizontal, the support components are circumferentially distributed around the wafer, and these components abut against the outer edge of the wafer when it is placed inside the cleaning chamber. This allows the wafer to rotate synchronously when the support components rotate. When the wafer cleaning device is vertical, the support components can be located below the wafer, and these components abut against the outer edge of the wafer when it is placed inside the cleaning chamber. This also allows the wafer to rotate synchronously when the support components rotate.

[0083] The wafer cleaning device also includes a roller brush, which is horizontally positioned in the housing and can rotate around its axis to clean the wafer surface. The axis of rotation of the roller brush is substantially parallel to the wafer surface, so the roller brush can clean the wafer surface by rotating to remove contaminants.

[0084] Since semiconductor processing is primarily automated, the wafer washing process typically involves controlling the relevant equipment using control parameters. To accurately analyze the wafer washing process, we first need to obtain the equipment parameters of the wafer washing apparatus and the primary control parameters used for wafer washing.

[0085] The structure of the wafer brushing device can be referred to the above content and will not be repeated here.

[0086] The first control parameter is the control parameter used to control the wafer brushing device to perform the brushing action, such as the roller brush speed, wafer speed, cleaning fluid spray speed, brushing time, and contact frequency between the roller brush and the wafer.

[0087] Step 202: Based on the equipment parameters of the wafer brushing device and the first control parameters, perform fitting calculations on the process of brushing the wafer by the roller brush of the wafer brushing device to obtain and display the brushing effect of each position of the wafer under the control of the first control parameters.

[0088] The equipment parameters of the wafer brushing apparatus may include the cavity size, roller diameter, brush surface dimensions, spray bar length, and nozzle parameters. This step primarily utilizes the various parameters of the roller directly related to the brushing process.

[0089] The parameters used to fit and calculate the washing process mainly involve three aspects: wafer parameters, brush parameters, and the first control parameter. Since the wafer size is fixed, such as 8-inch or 12-inch, the wafer parameters are relatively fixed, and the equipment parameters of the wafer washing device are also relatively fixed. Therefore, the washing process can be fitted based on the input first control parameter, combined with the two relatively fixed wafer parameters and brush parameters. This allows us to obtain the number of times the washing device is controlled according to the first control parameter, at each position on the wafer. The number of times the washing device is controlled can be used as the washing effect, or the washing effect can be obtained by converting the number of times the washing device is controlled.

[0090] Specifically, generally speaking, more brushing results in better cleaning. However, for wafers, their nanoscale structures are easily damaged, so over-brushing needs to be prevented. Therefore, when determining the cleaning effect, it is necessary to judge whether the number of brushing cycles will lead to over-brushing. To this end, in one implementation, over-brushing can be determined when the number of brushing cycles at a certain location exceeds a threshold. In another implementation, the number of brushing cycles at each location can be input into a preset neural network model, which then combines the wafer surface structure characteristics to predict the cleaning effect based on the number of brushing cycles at each location.

[0091] Step 203: Receive the brushing scheme generation operation in response to the displayed brushing effect input, and determine and generate the wafer brushing scheme.

[0092] In this embodiment, a wafer cleaning scheme can be generated based on the first control parameters in accordance with the cleaning scheme generation operation, or the first control parameters can be adjusted before generating the wafer cleaning scheme, both of which are within the protection scope of this application.

[0093] By demonstrating the cleaning effect of each region of the wafer as determined by the first control parameter, the staff can clearly understand the cleaning effect of cleaning the wafer by the first control parameter. The staff can selectively adjust the first control parameter based on the difference between the understood effect and the actual desired effect.

[0094] In this embodiment, by analyzing the wafer washing process and displaying the washing effect that reflects the washing process, the staff can determine whether the first control parameters used to wash the wafer can fully wash the wafer, whether the expected effect can be achieved, and whether there are any problems such as missed brushing, based on the displayed content. In this way, it can be determined whether to generate a wafer washing plan based on the first control parameters, which greatly simplifies the setting process of control parameters and ensures and improves the wafer cleaning effect.

[0095] Furthermore, in order to achieve better effect prediction, the brushing effect can be calculated in combination with the specific structure of the wafer cleaning device.

[0096] Specifically, the roller brush has a significant impact on the washing effect. The roller brush surface has regularly arranged protrusions, and the washing surfaces on these protrusions contact the wafer and wash it. Multiple washing surfaces 12 are provided on the roller brush surface, arranged periodically, with equal spacing between the washing surfaces 12 on the same circumference. The washing surfaces 12 can be arranged in a matrix-like periodic arrangement, a rotational periodic arrangement, or a symmetrical periodic distribution from the center to both sides, all of which are within the scope of protection of this application.

[0097] For example, such as Figure 2 As shown, taking a certain circumference 21 on wafer 2 as an example, the circumference 13 in the roller brush 1 is used to clean the circumference 21. During the cleaning process, wafer 2 rotates at the wafer speed included in the first control parameter, and roller brush 1 also rotates at the roller brush speed included in the first control parameter. Multiple cleaning surfaces 12 set on the surface of roller brush 1 will repeatedly clean the circumference 21 on wafer 2. The cleaning effect can be calculated accordingly.

[0098] Specifically, when using a roller brush with multiple brushing surfaces to clean wafers, the equipment parameters of the wafer cleaning apparatus include the dimensions of the brushing surfaces and the length of the roller brush repeating unit. The brushing surfaces on the wafer cleaning apparatus are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the brushing surface and the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer cleaning apparatus. Based on this, see [link to relevant documentation]. Figure 10 The step 202, which calculates the washing effect, can specifically include steps 2021-2022.

[0099] Step 2021: Receive at least two specified brushing cycle positions, and determine the roller brush repeating unit corresponding to each brushing cycle position. The brushing cycle positions include at least the following two types: the center position of the brushing surface, the longest distance position between the brushing surface and the brushing surface adjacent to the brushing surface in the rotation direction of the wafer brushing device, and the tangent position of the brushing surface in the rotation direction.

[0100] Figure 6 This is a schematic diagram of the brush surface arrangement of a roller brush according to an embodiment of this application. Figure 6 The diagram shows three brushing cycle positions: positions 3, 4, and 5. Position 3 is the center of the brushing surface, position 4 is the tangent position of the brushing surface in the rotation direction, and position 5 is the shortest distance position between the brushing surface and the brushing surface adjacent to it in the rotation direction of the wafer brushing device. The distance between the roller brush repeating units corresponding to positions 3 and 4 is the same, but the length of the brushing surface at position 4 is less than the length of the brushing surface at position 3, and the length of the roller brush repeating unit corresponding to position 5 is the shortest. It can be seen that during the rinsing process of wafer 2, when the circumference of wafer 2 passes through the rinsing surface 12 on the roller brush 1 of the wafer rinsing device, the circumference passing through the rinsing surface 12 with the fewest passes is the circumference between positions 3 and 4, and the circumference passing through the rinsing surface 12 with the most passes is the circumference between positions 4 and 5. Among them, position 4 is tangent to the rinsing surface 12 between the two adjacent rinsing surfaces it passes through. After passing through position 4, the number of circumferences passing through the rinsing surface 12 increases. Position 5 has the shortest length of the roller brush repeating unit when the rinsing surface 12 is passed through the most. Therefore, by analyzing positions 3, 4, and 5, the wafer rinsing situation is obtained as the threshold of all circumferences in the entire wafer 2.

[0101] It should be noted that the three brushing cycle positions mentioned above can be determined based on the periodic distribution of the brushing surface of the matrix roller brush. For other periodic distribution schemes of the brushing surface, such as a rotating periodic arrangement or a symmetrical periodic distribution from the center to both sides, a similar method can be used to determine the brushing cycle positions, as long as it can characterize the repetition of the brushing surface, all of which are within the scope of protection of this application.

[0102] In addition, in step 2021 above, the washing effect can be analyzed and calculated for multiple washing cycle positions, or any two of them can be calculated, all of which are within the scope of protection of this application.

[0103] Step 2022: Based on the equipment parameters of the wafer brushing device and the first control parameters, perform fitting calculations on the regions on the wafer corresponding to each brushing cycle position to obtain and display the brushing effect.

[0104] In this embodiment, the region on the wafer corresponding to each brushing cycle position can specifically be a circumference. For each circumference, a wafer repeating unit corresponding to the roller brush repeating unit can be determined. The wafer repeating unit is the wafer area brushed by the roller brush repeating unit at a set roller brush speed and wafer speed. The number of times the brushing surface passes through the wafer repeating unit in the first rotation cycle of the wafer brushing device is determined according to the first control parameters. Based on the number of cycles, wafer speed, and roller brush speed, the number of brushing repetitions by the roller brush repeating unit in the second rotation cycle of the wafer is determined. Based on the number of brushing repetitions corresponding to each wafer repeating unit, the brushing effect of each region of the wafer in the repeating cycle is determined.

[0105] like Figure 2 As shown, when the roller brush 1 of the wafer cleaning device contacts the wafer 2, the position of the roller brush repeating unit 11 on the wafer 2 is the wafer repeating unit 22. Based on the wafer rotation speed and roller brush speed included in the first control parameters, the number of times the cleaning surface 12 passes through the wafer repeating unit 22 in the first rotation cycle of the roller brush 1 of the wafer cleaning device can be determined. Furthermore, based on the number of cycles, the wafer rotation speed, and the roller brush speed, the number of times the wafer repeating unit 22 is cleaned by the roller brush repeating unit 11 in the second rotation cycle of the wafer 2 can be determined. From this, the cleaning effect of each area of ​​the wafer 2 within the repeating cycle can be deduced.

[0106] It should be noted that the calculated number of cycles may not be an integer. When the number of cycles is not an integer, after each rotation of the roller brush 1 of the wafer brushing device, the position of the wafer repeating unit 22 relative to the roller brush repeating unit 11 needs to be re-determined based on the decimal part of the number of cycles. When the starting position of the wafer repeating unit 22 aligns with the starting position of the roller brush repeating unit 11 for the second time, it is considered as one repeating cycle. The subsequent brushing process is the same as the brushing process within the repeating cycle. To facilitate statistical calculation and reduce the computational load, the number of brushing cycles can be calculated for one wafer repeating unit 22.

[0107] For example, to simplify calculations, one decimal place can be retained each time; see [link to example]. Figure 4A wafer repeating unit 22 can be divided into 10 parts. Of course, 10 parts is only an example and is not intended to limit this application.

[0108] In this application, the position of the wafer repeating unit 22 relative to the brush repeating unit 11 in each brush rotation cycle loop can be redefined based on the fractional part. Figure 4 The horizontal axis in the diagram represents a wafer repeating unit, and the vertical axis represents multiple brush rotation cycles (loops). The filled block in each loop represents the brushing surface area in the brush repeating unit 11, and its position in the diagram indicates the location of the brush repeating unit on the wafer repeating unit, such as... Figure 4 As shown, with each rotation of the roller brush, the starting position of the brushing surface shifts 0.6 units relative to the position of the wafer repeating unit 22. This means the decimal place of the number of cycles decreases by 0.6 units each time, until after 5 roller brush rotation cycles, the decimal place is 0 again. These 5 cycles can be considered one repeating cycle. The roller brush continues to rotate, repeating this brushing cycle until the end. This can be done according to... Figure 4 The number of times the wafer repeating unit 22 is divided into sections is used to count the number of times it is brushed. The statistical results can be shown as brushed once, brushed twice, etc., as shown above. Since the brushing process is based on the continuous repetition of the repeating cycle, the statistical result of one repeating cycle can be used as the statistical result of the number of times the wafer repeating unit 22 is brushed in the whole brushing process.

[0109] For easier demonstration later, the number of brushing cycles can be further calculated. For example, the variance of the number of brushing cycles for the repeating units of the roller brush at different brushing cycle positions can be calculated separately, and then the average of multiple variances can be calculated to obtain the overall brushing uniformity corresponding to the wafer rotation speed and roller brush rotation speed. This can then be used to demonstrate the brushing effect later. The specific demonstration scheme will be explained later.

[0110] The solution provided in this embodiment sets the brushing cycle position for the periodically arranged brushing surfaces and calculates the brushing effect of the area on the wafer corresponding to each brushing cycle position within the corresponding repetition cycle. This allows the calculated brushing effect of each area on the wafer to cover the brushing situation of different positions on the wafer as much as possible, improving the closeness between the calculated result and the actual brushing result, and increasing the reference value of the displayed brushing effect for staff.

[0111] After calculating the washing effect, the washing effect can be demonstrated to obtain the wafer washing solution approved by the staff.

[0112] Optionally, in this embodiment, when displaying the brushing effect, the brushing effect of each region of the wafer determined according to the first control parameter is displayed, including at least one of the following: displaying the brushing effect on the wafer corresponding to each brushing cycle position; displaying the statistical results of the brushing effect on the wafer corresponding to each brushing cycle position; displaying a wafer brushing effect diagram predicted based on the brushing effect on the wafer corresponding to each brushing cycle position.

[0113] See Figure 11 This shows a diagram illustrating the brushing effect corresponding to the position of the brushing cycle. Figure 11 The diagram shows the number of brushing cycles at three different locations within a single cycle, representing the brushing effect. Specifically, the number of brushing cycles can be determined based on the actual brushing time, which in turn is determined by the wafer rotation cycle, brush rotation cycle, and the number of wafer and brush rotations included in the cycle. It can be seen that while locations 3 and 5 have no missed areas under this condition, the brushing effect is very unevenly distributed. Location 4 has missed areas. This condition also leads to insufficient wafer brushing, resulting in a reduced brushing process effect.

[0114] Additionally, it can directly display statistical results of the brushing effect for regions on the wafer corresponding to each brushing cycle position, such as the missed brushing rate and the variance of brushing times. Furthermore, it can display statistical results graphs of the brushing effect for regions on the wafer corresponding to each brushing cycle position within the corresponding repetition cycle. These statistical results graphs can be circles with the same shape as the wafer, and the color blocks in the graph represent the distribution of the brushing effect at that location.

[0115] Optionally, in another embodiment of this application, if the first control parameters, including the roller brush speed and the wafer speed, are range values, then during the display, the roller brush speed and wafer speed are used as coordinate axes, and the comprehensive score of the brushing effect of each region of the wafer is used as the coordinate value for display. The comprehensive score can specifically be the overall brushing uniformity data corresponding to each wafer speed and roller brush speed calculated above. See [link to relevant documentation]. Figure 8 The graph displays the brush rotation speed on the horizontal axis and the wafer rotation speed on the vertical axis. The grayscale values ​​of the color blocks in the graph represent the overall score of the brushing effect. Users can determine whether the brushing effect meets their expectations based on the displayed color blocks.

[0116] After observing the demonstrated washing effect, if the effect meets expectations, staff can directly input the washing plan generation operation to generate a washing plan based on the first control parameter; if the effect does not meet expectations, they can input the adjustment operation for the first control parameter. For adjustments required, please refer to... Figure 12 Step 203 may specifically include:

[0117] Step 2031: Receive an adjustment operation in response to the displayed scrubbing effect input, adjust the first control parameter according to the adjustment operation, and generate a second control parameter.

[0118] In this embodiment, the first control parameter includes the roller brush speed and the wafer speed. Receiving an adjustment operation in response to the displayed brushing effect, adjusting the first control parameter according to the adjustment operation, and generating a second control parameter includes: receiving the adjustment operation, determining the target value of the roller brush speed and / or the wafer speed input by the adjustment operation, and generating the second control parameter according to the target value of the roller brush speed and / or the wafer speed.

[0119] Staff can input adjustment parameters through an intuitive input box. This input box can be part of the equipment's control panel or connected to external control software. The input box provides a user-friendly interface, allowing staff to directly enter numbers or select parameters to adjust the equipment's operating status.

[0120] Secondly, in addition to directly inputting parameters, staff can also make adjustments using data such as the displayed washing effect. For the different display methods mentioned above, staff can make adjustments in different ways.

[0121] For example, adjusting the brush rotation speed and wafer rotation speed can specifically include inputting a target value, adjusting the size, or adjusting the range. The brush rotation speed and wafer rotation speed can be specific values ​​or numerical ranges.

[0122] For example, upon receiving the adjustment operation, the target values ​​of the roller brush speed and / or the wafer speed input in the adjustment operation are determined; the target values ​​can be specific numerical values, such as directly inputting a roller brush speed of 500 rpm and a wafer speed of 100 rpm; or they can be numerical ranges, such as setting the roller brush speed to 400-600 rpm and the wafer speed to 80-120 rpm, to adapt to different cleaning needs.

[0123] A second control parameter is generated based on the target values ​​of the brush rotation speed and / or the wafer rotation speed. Specifically, when a specific value is input, the controller will directly use that value as the new control parameter; when a range of values ​​is input, the controller will determine that the control parameters include multiple sets, and can perform fitting calculations for each set of control parameters to obtain the brushing effect.

[0124] In addition to the target value input operation, the adjustment operation may also include a size adjustment operation, such as adjusting the slider to increase or decrease the speed of the roller brush or the wafer by a certain value, for example, each adjustment increases the speed of the roller brush by 20 rpm and decreases the speed of the wafer by 10 rpm.

[0125] Step 2032: Determine and display the brushing effect at each position of the wafer under the control of the second control parameter.

[0126] The specific method for determining and demonstrating the scrubbing effect of the second control parameter is similar to that for determining and demonstrating the scrubbing effect corresponding to the first control parameter in the above embodiments, and will not be repeated here.

[0127] Step 2033: Receive a brushing scheme generation operation in response to the displayed brushing effect input, and generate a wafer brushing scheme according to the first control parameter or the second control parameter.

[0128] Specifically, staff can compare the washing effects corresponding to the first control parameter and the second control parameter respectively, and select one that meets expectations to generate a wafer washing scheme; if it still does not meet expectations, the current first control parameter and the second control parameter can be used as the new first control parameter, and the process can be returned to step 2031 for adjustment again until the washing effect meets expectations.

[0129] In one possible implementation, during the determination of the second control parameter, the second control parameter can also be pre-verified based on the brushing conditions. Specifically, this can include: determining multiple simulated control parameters based on the equipment parameters of the wafer brushing device, the rotational speed range of the second control device, and the rotational speed range of the wafer; calculating the brushing effect of each region of the wafer in the corresponding repetition cycle under the control of the multiple simulated control parameters; obtaining multiple simulated brushing results; calculating the variance of the brushing effect of each region of the wafer in the corresponding repetition cycle corresponding to the multiple simulated brushing results; and determining the second control parameter based on the simulated control parameter corresponding to the simulated brushing result with the smallest brushing effect variance and where the brushing effect of each region of the wafer in the corresponding repetition cycle is not zero.

[0130] To determine the second control parameters for controlling the wafer brushing apparatus and wafer rotation speed, it is first necessary to define the equipment parameters of the wafer brushing apparatus, the rotation speed range of the wafer brushing apparatus, and the rotation speed range of the wafer. The equipment parameters of the wafer brushing apparatus include the number of protrusions that the surface of the wafer brushing apparatus passes through in one revolution along the brushing direction. Then, multiple rotation speeds of the wafer brushing apparatus and multiple rotation speeds of the wafer are selected within the rotation speed ranges of the wafer brushing apparatus and the wafer, thereby obtaining multiple simulated control parameters. After obtaining multiple simulated control parameters, the wafer is simulated to brush according to each simulated control parameter. Then, during the simulated brushing process, the brushing effect of each area of ​​the wafer in the corresponding repetition cycle is obtained to obtain multiple simulated brushing results. Specifically, the brushing effect of each region of the wafer within the corresponding repetition cycle can be normalized. The highest number of brushing effects for each region of the wafer within the corresponding repetition cycle is taken as 1. The normalized result is obtained by dividing the number of brushing effects for each region of the wafer within the corresponding repetition cycle by the highest number of other brushing effects. This normalized result is used as the simulated brushing result. Then, the variance of the brushing effect for each region of the wafer within the corresponding repetition cycle corresponding to multiple simulated brushing results is calculated. The variance of the brushing effect for each region of the wafer within the corresponding repetition cycle can be calculated as follows: Figure 7 As shown. Then, based on the simulated control parameters corresponding to the simulated brushing results that minimize the variance of the brushing effect and ensure that the brushing effect in each region of the wafer is not zero within the corresponding repetition cycle, the first control parameter is updated to obtain the second control parameter. The simulated brushing results can be shown as follows: Figure 8 As shown, through Figure 8 It can be seen that the uniformity of wafer cleaning is related to the rotation speed of the wafer cleaning device and the rotation speed of the wafer. The higher the gray value, the better the uniformity of cleaning. The uniformity of cleaning can also be taken into account when determining the rotation speed of the wafer cleaning device and the rotation speed of the wafer.

[0131] Specifically, when calculating multiple simulated scrubbing results based on multiple simulated control parameters, the same principle can be applied. Figure 6 By averaging the variances of the three brushing cycles over different brushing cycles, the results can be made more accurate.

[0132] It should be noted that each simulated control parameter includes at least one of the rotational speed of the wafer brushing device and the rotational speed of the wafer, which is different from other simulated control parameters among the multiple simulated control parameters, so as to avoid duplication among multiple simulated control parameters.

[0133] In this embodiment of the application, the results of wafer brushing are calculated by calculating multiple simulated control parameters. This allows for a direct understanding of how the wafer is brushed under different combinations of the rotation speed of the wafer brushing device and the wafer's rotation speed. Consequently, it is easier to select a more suitable rotation speed of the wafer brushing device and the wafer's rotation speed for brushing the wafer.

[0134] Figure 13 This is a schematic diagram of an automatic wafer cleaning device according to an embodiment of this application, as shown below. Figure 13 As shown, the automatic wafer washing device 500 includes:

[0135] The acquisition module 501 is used to acquire the equipment parameters of the wafer brushing device and the first control parameters for brushing the wafer;

[0136] The determining module 502 is used to determine, based on the equipment parameters of the wafer brushing device and the first control parameters, the number of times each position of the wafer is brushed within a repetition cycle when the wafer brushing device brushes the wafer, wherein the repetition cycle is used to indicate the minimum repetition cycle for the wafer brushing device to brush the wafer when brushing the wafer.

[0137] The adjustment module 503 is used to update the first control parameter and obtain the second control parameter if the number of times each region of the wafer is brushed in the corresponding repetition cycle meets the parameter update condition. This is so that when the wafer brushing device is controlled to brush the wafer according to the second control parameter, the number of times each region of the wafer is brushed in the corresponding repetition cycle does not meet the parameter update condition.

[0138] Since semiconductor processing is primarily automated, the wafer rinsing process typically involves controlling the equipment using control parameters. To ensure thorough wafer rinsing, the equipment parameters of the wafer rinsing apparatus and the first control parameters for rinsing are first obtained. The equipment parameters include the apparatus's own physical parameters. Without parameter control, the rinsing process uses the first control parameters. It's necessary to verify whether the equipment can adequately rinse the wafer under the control of these parameters. Therefore, based on the equipment parameters and the first control parameters, the number of times each area of ​​the wafer is rinsed within a corresponding repetition cycle is determined when the wafer rinsing apparatus is controlled by the first control parameters. The repetition cycle indicates the number of times the wafer rinsing apparatus rinsing a corresponding area of ​​the wafer. Thus, based on the situation within one repetition cycle, the rinsing results using the first control parameters can be calculated. If the number of times each region of the wafer is brushed within the corresponding repetition cycle meets the parameter update condition, the first control parameter is updated to obtain the second control parameter. When the wafer brushing device is controlled to brush the wafer according to the second control parameter, the number of times each region of the wafer is brushed within the corresponding repetition cycle does not meet the parameter update condition.

[0139] In this embodiment, by analyzing the wafer washing process during the repetition cycle, it is determined whether the first control parameter used to wash the wafer can adequately wash the wafer, thus providing a more accurate result and ensuring that the wafer can be adequately washed.

[0140] In this embodiment, an electronic device 600 is provided, such as... Figure 14 As shown, the electronic device 600 may include: a processor 601, a communications interface 602, a memory 603, and a communication bus 604. Wherein:

[0141] The processor 601, communication interface 602, and memory 603 communicate with each other via communication bus 604.

[0142] Communication interface 602 is used for communication with other electronic devices or servers.

[0143] The processor 601 is used to execute program 605, which can specifically execute the relevant steps in the aforementioned automatic wafer cleaning method embodiment.

[0144] Specifically, program 605 may include program code that includes computer operation instructions.

[0145] Processor 601 may be a CPU, an Application Specific Integrated Circuit (ASIC), or configured as one or more integrated circuits. A smart device may include one or more processors, which can be of the same type, such as one or more CPUs; or they may be of different types, such as one or more CPUs and one or more ASICs.

[0146] Memory 603 is used to store program 605. Memory 603 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage device.

[0147] Specifically, program 605 can be used to cause processor 401 to execute the automatic wafer brushing method in the foregoing embodiments.

[0148] The electronic device 600 of this application embodiment analyzes the wafer being brushed during a repetitive cycle to determine whether the first control parameter used to brush the wafer can sufficiently brush the wafer, thus achieving a more accurate result and ensuring that the wafer can be sufficiently brushed.

[0149] In this embodiment, a computer-readable storage medium is provided, storing instructions for causing a machine to perform an automated wafer brushing method as described herein. Specifically, a system or apparatus equipped with a storage medium storing software program code that implements the functions of any of the embodiments described above, and enabling the computer (or CPU or MPU) of the system or apparatus to read and execute the program code stored in the storage medium.

[0150] In this case, the program code read from the storage medium can itself implement the functions described in the above method embodiments, so the program code and the storage medium storing the program code constitute a part of this application.

[0151] Examples of storage media used to provide program code include floppy disks, hard disks, magneto-optical disks, optical disks (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), magnetic tapes, non-volatile memory cards, and ROMs. Alternatively, program code can be downloaded from a server computer via a communication network.

[0152] In this embodiment, a computer program product is provided, including computer instructions that instruct a computing device to perform the operations corresponding to the above-described method embodiments.

[0153] It should be noted that, depending on the implementation needs, the various components / steps described in the embodiments of this application can be broken down into more components / steps, or two or more components / steps or parts of the operation of components / steps can be combined into new components / steps to achieve the purpose of the embodiments of this application.

[0154] The methods described in the embodiments of this application can be implemented in hardware, firmware, or as software or computer code that can be stored in a recording medium (such as a CD-ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code downloaded over a network that is originally stored in a remote recording medium or a non-transitory machine-readable medium and will be stored in a local recording medium. Thus, the methods described herein can be processed by software stored on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA). It is understood that the computer, processor, microprocessor controller, or programmable hardware includes storage components (e.g., RAM, ROM, flash memory, etc.) capable of storing or receiving software or computer code, which, when accessed and executed by the computer, processor, or hardware, implements the methods described herein. Furthermore, when a general-purpose computer accesses code used to implement the methods shown herein, the execution of the code transforms the general-purpose computer into a dedicated computer for executing the methods shown herein.

[0155] Although this application has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art based on a reading and understanding of this specification and drawings. This application includes all such modifications and variations and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the aforementioned components, the terminology used to describe such components is intended to correspond to any component (unless otherwise indicated) that performs the specified function of said component (e.g., is functionally equivalent to it), even if structurally not equivalent to the disclosed structure performing the functions in the exemplary implementations of this specification shown herein.

[0156] That is, the above description is only an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, such as the combination of technical features between different embodiments, or direct or indirect application in other related technical fields, are similarly included within the patent protection scope of this application.

[0157] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0158] The above description is provided to enable any person skilled in the art to implement and use this application. Various details are set forth in the above description for purposes of explanation. It should be understood that those skilled in the art will recognize that this application can be implemented without using these specific details. In other embodiments, well-known processes will not be described in detail to avoid obscuring the description of this application with unnecessary detail. Therefore, this application is not intended to be limited to the embodiments shown, but is consistent with the broadest scope of the principles and features disclosed herein.

[0159] It should be noted that, without conflict, the various embodiments and / or technical features described in this application can be arbitrarily combined with each other, and the resulting technical solutions should also fall within the protection scope of this application.

[0160] It should be understood that the specific examples in the embodiments of this application are only for the purpose of helping those skilled in the art to better understand the embodiments of this application, and are not intended to limit the scope of the embodiments of this application. Those skilled in the art can make various improvements and modifications based on the above embodiments, and all such improvements or modifications fall within the protection scope of this application.

[0161] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An automated wafer cleaning method, characterized in that, include: Obtain the equipment parameters of the wafer brushing device and the first control parameters for brushing the wafer; Based on the equipment parameters and the first control parameters, determine the number of times each position of the wafer is brushed within a repetition cycle when the wafer brushing device is controlled to brush the wafer according to the first control parameters; If the number of times each region of the wafer is brushed meets the parameter update condition, the first control parameter is updated to obtain the second control parameter, so as to control the wafer brushing device to brush the wafer according to the second control parameter. The parameter update condition is used to characterize the brushing effect caused by the number of times each region of the wafer is brushed in the corresponding repetition cycle not meeting the expectations. The equipment parameters include: the length of the brushing surface of the roller brush of the wafer brushing device and the length of the roller brush repeating unit, wherein the brushing surfaces on the wafer brushing device are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the brushing surface and the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer brushing device. The first control parameters include: the wafer rotation speed and the roller speed of the wafer washing device when the wafer is being brushed.

2. The method according to claim 1, characterized in that, The step of determining the number of times each location on the wafer is brushed within a repetition cycle when the wafer brushing device brushes the wafer according to the equipment parameters and the first control parameters includes: Based on the equipment parameters, for each circumference on the wafer, the wafer repeating unit corresponding to the roller brush repeating unit on the circumference of the wafer is determined respectively; Based on the first control parameter, the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit is determined, and the number of times the brushed surface passes through each position is taken as the number of times the brushing surface passes through that position, thus obtaining the number of times each position of the wafer is brushed within the repeating cycle.

3. The method according to claim 2, characterized in that, The step of determining the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit according to the first control parameter, and taking the number of times the brushed surface passes through each position as the brushing count for that position, to obtain the number of times each position of the wafer is brushed within the repeating cycle, includes: When the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit is not an integer, the position of the wafer repeating unit relative to the roller brush repeating unit is re-determined based on the decimal part of the number of passes. When the position of the roller brush repeating unit is aligned with the starting position of the roller brush repeating unit for the second time, the number of times the brushed surface passes through each position is taken as the number of brushing times for that position, thus obtaining the number of times each position of the wafer is brushed within the repeating cycle.

4. The method according to claim 1, characterized in that, The parameter update conditions include: there is a position in the wafer during the repeat cycle where the number of washes is 0.

5. The method according to any one of claims 1-4, characterized in that, The parameter update conditions include: the difference in the number of times the position on the wafer that is brushed the most times during the repeat cycle is greater than a preset quantity threshold.

6. The method according to claim 1, characterized in that, The step of updating the first control parameter to obtain the second control parameter includes: Based on the equipment parameters, the rotation speed range of the wafer brushing device, and the rotation speed range of the wafer, a plurality of simulated control parameters are determined, wherein each simulated control parameter includes at least one of the rotation speed of the wafer brushing device and the rotation speed of the wafer, and is different from other simulated control parameters among the plurality of simulated control parameters. The number of times each region of the wafer is brushed in the corresponding repetition cycle under the control of multiple simulation control parameters is calculated to obtain multiple simulation brushing results; Calculate the variance of the number of brushing times for each region of the wafer corresponding to the multiple simulated brushing results within the corresponding repetition cycle; Based on the simulated control parameters corresponding to the simulated washing results that minimize the variance of the number of washes and ensure that the number of washes in each region of the wafer is not zero within the corresponding repetition cycle, the first control parameters are updated to obtain the second control parameters.

7. The method according to claim 1, characterized in that, The method further includes: When the surface of the wafer being brushed is perpendicular to the horizontal plane, if the second control parameter indicates that the speed at which the wafer brushing device is rotated is less than the speed at which the outer edge of the wafer is rotated, or if the speed at which the wafer is rotated is greater than the first speed threshold, a speed reduction warning is issued. When the surface of the wafer being brushed is parallel to the horizontal plane, if the second control parameter indicates that the speed at which the wafer brushing device rotates is less than the speed at which the outer edge of the wafer rotates, or if the speed at which the wafer rotates is greater than the second speed threshold, a speed drop warning is issued.

8. A method for generating a wafer brushing scheme, characterized in that, include: The system receives a first control parameter, which is used to control the roller brush of the wafer washing device to wash the wafer. Based on the equipment parameters of the wafer brushing device and the first control parameters, the process of brushing the wafer by the roller brush of the wafer brushing device is fitted and calculated to obtain and display the brushing effect of each position of the wafer under the control of the first control parameters. Receive a brushing scheme generation operation in response to the input of the displayed brushing effect, determine and generate a wafer brushing scheme; The equipment parameters include: the length of the brushing surface of the roller brush of the wafer brushing device and the length of the roller brush repeating unit, wherein the brushing surfaces on the wafer brushing device are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the brushing surface and the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer brushing device. The first control parameters include: the wafer rotation speed and the roller speed of the wafer washing device when the wafer is being brushed.

9. An automatic wafer cleaning device, characterized in that, include: The acquisition module is used to acquire the equipment parameters of the wafer brushing device and the first control parameters for brushing the wafer; The determining module is used to determine, based on the device parameters and the first control parameters, the number of times each position of the wafer is brushed within a repetition cycle when the wafer brushing device brushes the wafer, wherein the repetition cycle is used to indicate the minimum repetition cycle for the wafer brushing device to brush the wafer when brushing the wafer. The adjustment module is used to update the first control parameter if the number of times each region of the wafer is brushed in the corresponding repetition cycle meets the parameter update condition, and obtain the second control parameter. When the wafer brushing device is controlled to brush the wafer according to the second control parameter, if the number of times each region of the wafer is brushed in the corresponding repetition cycle does not meet the parameter update condition, the parameter update condition is used to characterize that the brushing effect caused by the number of times each region of the wafer is brushed in the corresponding repetition cycle does not meet the expectations. The equipment parameters include: the length of the brushing surface of the roller brush of the wafer brushing device and the length of the roller brush repeating unit, wherein the brushing surfaces on the wafer brushing device are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the brushing surface and the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer brushing device. The first control parameters include: the wafer rotation speed and the roller speed of the wafer washing device when the wafer is being brushed.

10. An electronic device, characterized in that, include: The processor, communication interface, memory, and communication bus communicate with each other through the communication bus. The memory is used to store at least one executable instruction that causes the processor to perform the operation corresponding to the method described in any one of claims 1-8.

11. A computer storage medium, characterized in that, It stores a computer program that, when executed by a processor, implements the method as described in any one of claims 1-8.

12. A computer program product, characterized in that, Includes computer instructions that instruct a computing device to perform an operation corresponding to the method described in any one of claims 1-8.

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