Method for manufacturing a metal substrate for semiconductor packaging

Abstract

The application relates to a manufacturing method of a metal substrate for semiconductor packaging, which comprises the following steps: blanking a rectangular base material with a thickness of D; grinding the rectangular base material to a required thickness on a grinding machine; making the appearance of the rectangular base material reach the requirement through sand blasting and cleaning; cutting the rectangular base material into a plurality of E-shaped workpieces through wire cutting, clamping and fixing the E-shaped workpieces, smearing metal glue on the surface of the clamped and fixed E-shaped workpieces, and then grinding the transverse rectangular structure part of the E-shaped workpieces through a grinding device to obtain a plurality of vertical rectangular base materials; cleaning the vertical rectangular base materials obtained after grinding by using acetone; and electroplating the vertical rectangular base materials after cleaning; detecting the vertical rectangular base materials after electroplating, and removing defective products to obtain a metal substrate for packaging. The application can effectively solve the existing processing problems, and improve the production efficiency and product quality.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and in particular relates to a method for manufacturing a metal substrate for semiconductor packaging. Background Technology

[0002] Current metal substrate processing faces numerous challenges. Rough processing methods result in inconsistent precision and low efficiency. Traditional grinding methods easily cause substrate deformation and insufficient parallelism between corresponding surfaces. The small size of the metal substrate makes clamping and fixing ineffective, severely impacting subsequent processing accuracy. Cleaning and electroplating processes also fail to meet increasingly stringent product quality requirements. Furthermore, multiple clamping operations during processing, due to positioning errors, cumulative errors, and human error, lead to decreased dimensional and positional accuracy, particularly noticeable in smaller products, necessitating immediate improvement. Summary of the Invention

[0003] To address the problems existing in the background art, the present invention provides a method for manufacturing a metal substrate for semiconductor packaging, characterized in that it includes:

[0004] S1: Cutting rectangular substrate, wherein the rectangular substrate is selected with a thickness of D;

[0005] S2: Grind the rectangular substrate on a grinding machine to the thickness required by the drawing;

[0006] S3: The rectangular substrate is made to meet the appearance requirements through sandblasting and cleaning;

[0007] S4: Cut the rectangular substrate into several E-shaped workpieces, wherein each E-shaped workpiece includes a horizontal rectangular structure and multiple vertical rectangular structures, and the top of each vertical rectangular structure is integrally connected to the bottom of the horizontal rectangular structure.

[0008] S5: The wire-cut E-shaped workpiece is clamped and fixed. Metal glue is applied to the surface of the clamped E-shaped workpiece. Then, the grinding equipment grinds the horizontal rectangular structure of the E-shaped workpiece to obtain multiple vertical rectangular substrates.

[0009] S6: The vertical rectangular substrate obtained after cleaning and grinding with acetone is then electroplated.

[0010] S7: Inspect the vertical rectangular substrate after electroplating, remove defective products, and obtain the metal substrate for packaging.

[0011] The present invention has at least the following beneficial effects

[0012] This invention addresses the challenges of processing rectangular substrates by significantly improving metal substrate manufacturing through process optimization. Grinding is employed to precisely control thickness, avoiding substrate deformation issues caused by traditional grinding and ensuring processing accuracy. Sandblasting effectively improves appearance quality, laying a solid foundation for subsequent processes. Wire EDM directly processes the rectangular substrate into E-shaped workpieces. After clamping, metal adhesive is applied, followed by grinding to enhance fixation and improve surface finish. By grinding away the horizontal rectangular structure of the E-shaped workpiece, multiple vertical rectangular substrates (i.e., the metal substrate for packaging) are obtained, reducing positioning and cumulative errors from multiple clamping operations and improving shape and position accuracy. Acetone cleaning ensures surface cleanliness before electroplating, resulting in a more uniform and robust plating layer that meets stringent quality requirements. Finally, defective products are rejected through inspection. This comprehensive process optimization, from precision control and process improvement to quality assurance, effectively solves existing processing problems and improves production efficiency and product quality. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the method flow of the present invention;

[0014] Figure 2 This is a schematic diagram of cutting an E-shaped workpiece;

[0015] Figure 3 A schematic diagram of an E-shaped workpiece;

[0016] Figure 4 This is a schematic diagram of grinding an E-shaped workpiece. Detailed Implementation

[0017] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0018] The accompanying drawings are for illustrative purposes only and are schematic diagrams, not actual pictures. They should not be construed as limiting the invention. To better illustrate the embodiments of the invention, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the actual product dimensions. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0019] In the accompanying drawings of the embodiments of the present invention, the same or similar reference numerals correspond to the same or similar components. In the description of the present invention, it should be understood that if terms such as "upper," "lower," "left," "right," "front," and "rear" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the terms used to describe positional relationships in the drawings are only for illustrative purposes and should not be construed as limiting the present invention. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.

[0020] Please see Figure 1 The present invention provides a method for manufacturing a metal substrate for semiconductor packaging, comprising:

[0021] S1: Cutting rectangular substrate, wherein the rectangular substrate is selected with a thickness of D;

[0022] Preferably, the rectangular substrate cutting in step S1 includes:

[0023] S11: Import the design drawings into the cutting machine control system, set the blanking size and mark the position of the positioning groove;

[0024] S12: Place the substrate with thickness D on the cutting machine's worktable and start the cutting machine to cut the substrate's shape; during the cutting process, the cutting machine's vision positioning system scans the substrate surface in real time to identify any X-axis and Y-axis offsets between the actual and ideal positions of the substrate; and automatically adjusts the cutting path based on these offsets to ensure cutting accuracy;

[0025] S13: After completing the outer shape cutting, cut out the positioning groove according to the marked positioning groove position to complete the blanking of the rectangular base material.

[0026] In this embodiment, the above steps are illustrated using AIN as the substrate. The design drawing specifies an AIN substrate thickness of 1.2mm, but in this actual operation, an AIN substrate with a thickness D of 2.0mm is used (0.8mm thicker than the drawing requirement). The design drawing is imported into the cutting machine's control system. The specific dimensions for the material cutting are set through the control system, for example, a length of 50mm and a width of 30mm. Simultaneously, the position of the positioning groove is calibrated, assuming the positioning groove is located 10mm from the left edge and 10mm from the bottom edge of the substrate, and the dimensions of the positioning groove are 10mm long and 2mm wide.

[0027] A 2.0mm thick AIN substrate is placed on the cutting machine's worktable, and the machine is started to cut the substrate's outline. During the cutting process, the cutting machine's vision positioning system activates. For example, if the system detects that the substrate's actual position is offset 1mm to the right in the X-axis direction and 0.5mm upwards in the Y-axis direction, the machine automatically adjusts the cutting path based on the detected offset data. The path, which should have started from point (0,0), is adjusted to start from point (1,0.5), and subsequent cutting paths are adjusted accordingly to ensure the final cut dimensions are accurate, maintaining a length of 50mm and a width of 30mm. After the outline is cut, the machine cuts the positioning groove according to the previously marked location (10mm from the left edge, 10mm from the bottom edge, with dimensions of 10mm in length and 2mm in width). After cutting, a rectangular substrate that meets the requirements is obtained, which can be used for further processing and fabrication of electronic component bases. The above complete examples illustrate the entire process from selecting the substrate to finally cutting the rectangular substrate, and how to utilize the functions of the cutting machine to ensure cutting accuracy during the cutting process.

[0028] S2: Grind the rectangular substrate on a grinding machine to the thickness required by the drawing;

[0029] Preferably, step S2 includes:

[0030] S21: Fix the rectangular substrate after it has been cut and preliminarily positioned on the grinding machine. Roughly grind the rectangular substrate with a coarse grinding wheel. During the grinding process, the surface temperature of the substrate is kept at a low temperature throughout the grinding process by the cooling system. The Brinell hardness of the rectangular substrate is detected by a hardness testing device, and the grinding pressure and feed speed of the grinding machine are adjusted based on the Brinell hardness of the rectangular substrate.

[0031] S22: After rough grinding, the rectangular substrate is finely ground using a fine grinding wheel. During the grinding process, the thickness deviation on the substrate surface is monitored in real time using a laser interferometer. The grinding path and feed speed of the grinding machine are intelligently adjusted according to the detected thickness deviation until the thickness required by the drawing is achieved.

[0032] In this embodiment, a 2.0mm thick rectangular AIN substrate, after being cut and initially positioned, is fixed on a grinding machine using a suitable fixture to ensure that the substrate does not move during grinding. The grinding machine is started, and an 80-180 mesh silicon carbide coarse grinding wheel is used to grind the rectangular substrate. During grinding, the cooling system starts working, spraying coolant, such as water-based coolant, onto the grinding area to control the substrate surface temperature to remain at a low temperature throughout the grinding process, assuming the temperature is controlled below 30℃ (to avoid affecting the substrate performance due to excessive temperature). The hardness testing device detects the Brinell hardness of the rectangular substrate in real time. Assuming the initially detected Brinell hardness of the AIN substrate is 200HB (Brinnell hardness unit), the grinding machine system automatically adjusts the grinding pressure to 50N (Newtons) and the feed rate to 5mm / min (millimeters per minute) based on this hardness value to adapt to changes in substrate hardness and ensure grinding effect. After a period of coarse grinding, the substrate thickness is roughly ground to a thickness close to the drawing requirements, such as 1.4mm. After rough grinding, a 400-1000 grit diamond grinding wheel is used for fine grinding of the rectangular substrate. At this point, a laser interferometer begins real-time monitoring of thickness deviations on the substrate surface. Assuming the laser interferometer detects a thickness of 1.42 mm in a certain area of ​​the substrate surface, while the thickness of an adjacent area is 1.38 mm, there is a thickness deviation of 0.04 mm. Based on this detection result, the grinding system intelligently adjusts the grinding path, increasing the grinding time for the 1.42 mm thick area and reducing the feed rate to 2 mm / min for that area, while appropriately reducing the grinding time for the 1.38 mm thick area and maintaining the feed rate at 4 mm / min. As grinding continues, the laser interferometer continuously detects the thickness deviation and feeds it back to the grinding system, which continuously adjusts the grinding path and feed rate. After multiple adjustments and grinding cycles, the substrate thickness finally reaches the 1.2 mm required by the drawing, and the thickness deviation of the entire substrate surface is controlled within an extremely small allowable range, such as ±0.01 mm.

[0033] S3: The rectangular substrate is made to meet the appearance requirements through sandblasting and cleaning;

[0034] Preferably, step S3 includes:

[0035] S31: Load the mixed abrasive into the sandblasting can, fix the polished rectangular substrate on the worktable of the sandblasting equipment, and start the sandblasting equipment to sandblast the rectangular substrate.

[0036] S32: After sandblasting, use an ultrasonic cleaner to ultrasonically clean the rectangular substrate in an alkaline cleaning solution.

[0037] S33: After step S32, use a mega-sonic cleaning device to ultrasonically clean the rectangular substrate in a neutral cleaning agent to make the rectangular substrate meet the appearance requirements.

[0038] In this embodiment, alumina abrasive with a particle size of 50μm and silicon carbide abrasive with a particle size of 30μm are mixed in a 3:2 ratio and loaded into a sandblasting can. Alumina has high hardness and can effectively remove microburrs and imperfections on the substrate surface; silicon carbide particles are finer and can help improve the uniformity of the surface after sandblasting. The AIN rectangular substrate, which has been polished to a thickness of 1.2mm as required by the drawing, is fixed on the worktable of the sandblasting equipment using a special fixture to ensure that the substrate will not shake or shift during the sandblasting process. The air pressure of the sandblasting equipment is set to 0.5MPa and the sandblasting time is 3 minutes. After the sandblasting equipment is started, the mixed abrasive is sprayed at high speed onto the surface of the AIN substrate under the action of high-pressure airflow. Through the impact and cutting action of the abrasive, the residual polishing marks and impurities on the substrate surface are removed, and a uniform rough texture is formed on the surface to meet the surface adhesion requirements of the subsequent packaging process. After sandblasting, the substrate surface exhibits a uniform matte effect with a roughness of approximately Ra0.8μm. Add a 5% sodium hydroxide alkaline cleaning solution to the cleaning tank of the ultrasonic cleaner. Sodium hydroxide effectively removes residual grease, organic contaminants, etc. from the substrate surface. Place the sandblasted AIN rectangular substrate into the cleaning tank of the ultrasonic cleaner, set the cleaning temperature to 50℃, the ultrasonic frequency to 40kHz, and the cleaning time to 10 minutes. Under the high-frequency vibration of the ultrasound, countless tiny cavitation bubbles are generated. When these bubbles burst, they generate a powerful impact force, peeling off the dirt from the substrate surface and dispersing it into the cleaning solution, achieving a deep cleaning effect. Dilute a neutral surfactant cleaning agent (fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether) in deionized water at a ratio of 1:100 and pour it into the cleaning tank of the megasonic cleaning equipment. The neutral cleaning agent can further remove residual alkaline cleaning agent and fine particulate impurities without damaging the substrate surface. Transfer the alkaline-cleaned AIN substrate to the megasonic cleaning equipment, set the cleaning temperature to 40℃, the megasonic frequency to 800kHz, and the cleaning time to 8 minutes. Megasonic waves, with their higher frequency, produce a more subtle and uniform cavitation effect, allowing them to penetrate deep into the tiny pores and depressions on the substrate surface to remove extremely fine particles and chemical residues. After megasonic cleaning, the substrate surface becomes clean and bright, free of any visible stains or impurities, meeting the stringent requirements for electronic packaging and ready for subsequent processing steps.

[0039] Please see Figure 2 and Figure 3 S4: Cut the rectangular substrate into several E-shaped workpieces, wherein each E-shaped workpiece includes a horizontal rectangular structure and multiple vertical rectangular structures, and the top of each vertical rectangular structure is integrally connected to the bottom of the horizontal rectangular structure.

[0040] Preferably, step S4 includes:

[0041] S41: The rectangular substrate is fixedly installed on the CNC wire cutting machine tool according to the positioning groove on the rectangular substrate, and the positioning groove cooperates with the positioning pin on the CNC wire cutting machine tool;

[0042] S42: A combination of tungsten wire and molybdenum wire is selected as the electrode wire, and the discharge gap is set according to the diameter of the electrode wire and the material properties of the rectangular substrate.

[0043] S43: Mix the surfactant and deionized water evenly according to the preset ratio and inject it into the machine tool working fluid tank;

[0044] S44: Start the CNC wire EDM machine to cut the rectangular substrate. During the cutting process, the electrode wire, under the flushing of the working fluid, cuts the workpiece layer by layer through high-frequency pulse discharge. The vibration of the machine tool table is monitored in real time by a dynamic vibration damping device. When the vibration amplitude exceeds the set threshold, the dynamic vibration damping device immediately generates a reverse force to counteract the vibration. The change in electrode wire diameter is measured in real time by a laser rangefinder. When the electrode wire diameter decreases, the system automatically adjusts the cutting path to compensate for the dimensional deviation caused by electrode wire wear and ensure the cutting dimensional accuracy. At the same time, when cutting the corner of the E-shaped workpiece, the machine tool control system automatically reduces the cutting speed to reduce the discharge gap error at the corner and ensure the cutting accuracy at the corner.

[0045] In this embodiment, an AIN rectangular substrate, after sandblasting and cleaning, has a smooth and clean surface. The locating pins on the CNC wire EDM machine are pre-installed and adjusted. The locating groove on the rectangular substrate is aligned with the machine's locating pins, gently lowered, and secured, ensuring a tight fit between the locating groove and the locating pins to maintain stability during cutting. A combination electrode wire of 0.18mm diameter tungsten wire and 0.15mm diameter molybdenum wire is selected. Due to the high hardness and moderate conductivity of AIN material, the discharge gap is set to 0.02mm on each side, based on its characteristics. A surfactant (e.g.,) is mixed with deionized water at a ratio of 1:20. A measured amount of deionized water is first poured into the machine's working fluid tank, followed by the slow addition of the surfactant, while simultaneously stirring thoroughly until a uniform mixture is achieved. The resulting working fluid provides excellent lubrication, cooling, and chip removal properties, ensuring a smooth cutting process. The CNC wire EDM machine is started, and the electrode wire begins to discharge under the action of a high-frequency pulse power supply, with the working fluid continuously flushing the cutting area. During the cutting process: The dynamic vibration damping device monitors the vibration of the machine tool table in real time. If abnormal vibration occurs during cutting due to machine operation, and the vibration amplitude reaches a set threshold (e.g., 0.05mm), the dynamic vibration damping device responds quickly, generating a counterforce, much like providing stable support for a wobbly table, thus counteracting the vibration and ensuring smooth cutting. The laser rangefinder continuously measures the change in electrode wire diameter. As cutting progresses, the electrode wire gradually wears down. When the electrode wire diameter is detected to decrease from the initial 0.18mm to 0.17mm, the system automatically calculates the electrode wire wear and adjusts the cutting path to compensate for the dimensional deviation caused by the thinning of the electrode wire, ensuring that the cutting dimensions of the E-shaped workpiece always meet the accuracy requirements. When cutting to the corner of the E-shaped workpiece, the machine tool control system automatically reduces the cutting speed from 5mm / min to 2mm / min. By reducing the speed, the discharge gap error at the corner is reduced, ensuring the cutting accuracy at the corner. The resulting E-shaped workpiece has clear, regular corners that meet design standards.

[0046] Please see Figure 4 S5: The wire-cut E-shaped workpiece is clamped and fixed, metal glue is applied to the surface of the clamped E-shaped workpiece, and then the grinding equipment grinds the horizontal rectangular structure part of the E-shaped workpiece to obtain multiple vertical rectangular substrates.

[0047] In this embodiment, the E-shaped workpiece is first initially clamped and fixed using a fixture. The fixture surface has protrusions that match the slots of the vertical rectangular structure of the E-shaped workpiece. The vertical rectangular structure is inserted into the fixture slots and initially fixed using mechanical latches on the fixture. The main fixing part is the vertical rectangular structure of the E-shaped workpiece. Using a high-precision dispensing machine, a layer of special high-temperature metal adhesive is evenly applied along the edge where the vertical rectangular structure of the E-shaped workpiece contacts the fixture. This metal adhesive is suitable for AlN material, is semi-fluid at room temperature, and has good wetting properties. After application, it can quickly fill the tiny gaps between the workpiece and the fixture. After curing, it can form a high-strength adhesive force, further fixing the vertical rectangular structure of the E-shaped workpiece to the fixture. Then, the workpiece is passed through a grinding machine. The grinding head of the grinding machine grinds the horizontal rectangular structure of the E-shaped workpiece. During the grinding process, the grinding head gradually removes the material with a horizontal rectangular structure according to the set grinding parameters (such as rotation speed, pressure, grinding path, etc.), for example, setting the grinding head rotation speed to 2000 rpm and the grinding pressure to 0.3 MPa, processing it into multiple independent vertical rectangular substrates. Simultaneously, the grinding equipment's real-time monitoring system monitors the grinding process to ensure that the grinding accuracy and surface quality meet the requirements. Furthermore, by gradually removing the horizontal rectangular structure material and processing it into multiple independent vertical rectangular substrates, the number of clamping operations required in traditional substrate processing is reduced, improving production efficiency and product quality.

[0048] S6: The vertical rectangular substrate obtained after cleaning and grinding with acetone is then electroplated.

[0049] Preferably, the vertical rectangular substrate obtained after cleaning and grinding with acetone comprises:

[0050] S61: Place the vertical rectangular substrate obtained after grinding into an ultrasonic cleaning tank containing acetone solution, and start the microwave-ultrasonic combined cleaning equipment to clean the vertical rectangular substrate.

[0051] S62: Place the vertical rectangular substrate that has been cleaned in step S61 into an ultrasonic cleaning tank filled with clean water, and start the microwave-ultrasonic combined cleaning equipment to clean the vertical rectangular substrate again to obtain the cleaned vertical rectangular substrate.

[0052] In this embodiment, the vertically rectangular substrate obtained after grinding is placed in an ultrasonic cleaning tank containing acetone solution. The microwave-ultrasonic combined cleaning equipment is activated. This equipment utilizes the cavitation effect of ultrasound and the assistance of microwaves to accelerate the dissolution and removal of dirt from the substrate surface by acetone. Ultrasonic waves generate tiny bubbles in the liquid; when these bubbles burst instantaneously, they generate a powerful impact force that can penetrate deep into the tiny pores and crevices on the substrate surface, shaking off the dirt. Microwaves further improve cleaning efficiency, allowing acetone molecules to interact more actively with the dirt. The vertically rectangular substrate, after being cleaned with acetone, is removed from the acetone cleaning tank and placed in another ultrasonic cleaning tank containing clean water. The clean water removes residual acetone and any dirt particles that may have remained on the substrate surface during the acetone cleaning process. The microwave-ultrasonic combined cleaning equipment is activated again for a second cleaning of the vertically rectangular substrate. This step also utilizes the cavitation effect of ultrasound and the assistance of microwaves to ensure that acetone and other impurities on the substrate surface are thoroughly cleaned.

[0053] S7: Inspect the vertical rectangular substrate after electroplating, remove defective products, and obtain the metal substrate for packaging.

[0054] Preferably, step S7 includes:

[0055] S71: Use a machine vision system to photograph the surface of a vertical rectangular substrate and use image recognition algorithms to detect whether there are appearance defects on the surface;

[0056] S72: Uses a laser displacement sensor to scan a vertical rectangular substrate from multiple angles and measure its dimensional data;

[0057] S73: Use a spectrometer to analyze the surface of the coating to determine the composition and thickness of the coating;

[0058] S74: The test data is compared with the preset standard. For vertical rectangular substrates that do not meet the standard, they are automatically marked and removed by a robotic arm.

[0059] In this embodiment, the cleaned and electroplated AIN vertical rectangular substrate is placed on the inspection table, and the machine vision system begins operation. This system is equipped with a high-resolution industrial camera, capable of quickly taking multi-angle photos of the substrate surface. For example, it captures images vertically from above and from multiple directions such as a 45-degree angle, ensuring comprehensive capture of image information of the substrate surface. Advanced image recognition algorithms are used to analyze the captured images. These algorithms, trained on a large number of samples, can accurately identify various appearance defects, such as surface scratches, dents, and cracks. For example, the algorithm can clearly mark scratches wider than 0.05mm. If a scratch with a length of 0.5mm and a width of 0.08mm is detected on the substrate surface, the machine vision system immediately records the defect information. A high-precision laser displacement sensor scans the vertical rectangular substrate from multiple angles. The sensor rotates around the substrate, emitting laser beams from different directions to accurately measure the dimensions of various parts of the substrate. For example, scanning is performed from multiple directions such as front-back, left-right, and top-bottom to ensure comprehensive dimensional data is obtained. A laser displacement sensor calculates the distances between points on the substrate surface by measuring the time and angle of laser reflection, thus obtaining detailed dimensional information. Assuming a preset standard for the length of a vertical rectangular substrate is 10mm, the width is 5mm, and the height is 2mm, during scanning, the sensor measures the length of a substrate to be 10.02mm, the width to be 4.98mm, and the height to be 2.01mm; these data are recorded in real time. A spectrometer is used to analyze the coating surface. This instrument emits light of a specific wavelength, which interacts with the material on the coating surface to generate a spectral signal. By analyzing the spectral signal, the composition and thickness of the coating can be determined. For example, for a nickel-plated AlN substrate, the spectrometer can accurately detect the nickel content and thickness of the coating. Assuming a preset standard for nickel plating thickness is 0.1mm, analysis reveals that the nickel plating thickness of a certain substrate is 0.09mm, and the analyzer records this data. The spectrometer can also detect the presence of other impurity elements in the coating. If trace amounts of iron are detected in the coating, which may affect the performance of the substrate, the system will record this information. The system then compares the detected appearance defects, dimensional data, coating composition, and thickness with preset standards. For example, the preset standards for appearance defects are: scratches wider than 0.05 mm are not allowed; dimensional deviations must be within ±0.03 mm; and nickel plating thickness deviations must be within ±0.01 mm. Through comparison, a substrate was found to have a scratch 0.08 mm wide, a length deviation of +0.02 mm, a width deviation of -0.02 mm, a height deviation of +0.01 mm, and a nickel plating thickness deviation of -0.01 mm. Because this substrate has appearance defects that do not meet the standards, the system will mark it as a non-conforming product.For vertically rectangular substrates marked as non-conforming, the robotic arm will automatically remove them from the inspection table according to system instructions and place them in a special non-conforming product collection box. Substrate that meets the standards will be sent to the subsequent packaging process, ready for shipment. This embodiment illustrates the use of AIN substrates as an example. With a thorough understanding of this solution, those skilled in the art can also adapt some of the conditions above or conduct limited experiments to obtain the corresponding substrate production method for producing other substrates.

[0060] In summary, this invention addresses the challenges of processing rectangular substrates by significantly improving metal substrate manufacturing through process optimization. Grinding with a grinding machine precisely controls thickness, avoiding substrate deformation issues caused by traditional grinding and ensuring processing accuracy. Sandblasting effectively improves appearance quality, laying a solid foundation for subsequent processes. Wire EDM directly processes the rectangular substrate into E-shaped workpieces; after clamping, metal adhesive is applied followed by grinding to enhance fixation, improve surface processing accuracy, reduce positioning and cumulative errors from multiple clamping operations, and improve shape and position accuracy. Acetone cleaning ensures surface cleanliness before electroplating, resulting in a more uniform and robust electroplated layer that meets stringent quality requirements. Finally, defective products are rejected through inspection. This comprehensive process optimization, from precision control and process improvement to quality assurance, effectively solves existing processing problems and improves production efficiency and product quality.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A method for manufacturing a metal substrate for semiconductor packaging, characterized in that, include: S1: Cutting rectangular substrate, wherein the rectangular substrate is selected with a thickness of D; S2: Grind the rectangular substrate on a grinding machine to the thickness required by the drawing; S3: The rectangular substrate is made to meet the appearance requirements through sandblasting and cleaning; S4: Cut the rectangular substrate into several E-shaped workpieces, wherein each E-shaped workpiece includes a horizontal rectangular structure and multiple vertical rectangular structures, and the top of each vertical rectangular structure is integrally connected to the bottom of the horizontal rectangular structure. S5: Clamp and fix the wire-cut E-shaped workpiece, apply metal glue to the surface of the clamped E-shaped workpiece, and then grind the horizontal rectangular structure part of the E-shaped workpiece with the grinding equipment. By gradually removing the material of the horizontal rectangular structure, it is processed into multiple independent vertical rectangular substrates. S6: The vertical rectangular substrate obtained after cleaning and grinding with acetone is then electroplated. S7: Inspect the vertical rectangular substrate after electroplating, remove defective products, and obtain the metal substrate for packaging.

2. The method for manufacturing a metal substrate for semiconductor packaging according to claim 1, characterized in that, Step S1 includes: S11: Import the design drawings into the cutting machine control system, set the blanking size and mark the position of the positioning groove; S12: Place the substrate with thickness D on the cutting machine's worktable and start the cutting machine to cut the substrate's shape; during the cutting process, the cutting machine's vision positioning system scans the substrate surface in real time to identify any X-axis and Y-axis offsets between the actual and ideal positions of the substrate; and automatically adjusts the cutting path based on these offsets to ensure cutting accuracy; S13: After completing the outer shape cutting, cut out the positioning groove according to the marked positioning groove position to complete the blanking of the rectangular base material.

3. The method for manufacturing a metal substrate for semiconductor packaging according to claim 1, characterized in that, Step S2 includes: S21: Fix the rectangular substrate after it has been cut and preliminarily positioned on the grinding machine. Roughly grind the rectangular substrate with a coarse grinding wheel. During the grinding process, the surface temperature of the substrate is kept at a low temperature throughout the grinding process by the cooling system. The Brinell hardness of the rectangular substrate is detected by a hardness testing device, and the grinding pressure and feed speed of the grinding machine are adjusted based on the Brinell hardness of the rectangular substrate. S22: After rough grinding, the rectangular substrate is finely ground using a fine grinding wheel. During the grinding process, the thickness deviation on the substrate surface is monitored in real time using a laser interferometer. The grinding path and feed speed of the grinding machine are intelligently adjusted according to the detected thickness deviation until the thickness required by the drawing is achieved.

4. The method for manufacturing a metal substrate for semiconductor packaging according to claim 1, characterized in that, Step S3 includes: S31: Load the mixed abrasive into the sandblasting can, fix the polished rectangular substrate on the worktable of the sandblasting equipment, and start the sandblasting equipment to sandblast the rectangular substrate. S32: After sandblasting, use an ultrasonic cleaner to ultrasonically clean the rectangular substrate in an alkaline cleaning solution. S33: After step S32, use a mega-sonic cleaning device to ultrasonically clean the rectangular substrate in a neutral cleaning agent to make the rectangular substrate meet the appearance requirements.

5. The method for manufacturing a metal substrate for semiconductor packaging according to claim 1, characterized in that, Step S4 includes: S41: The rectangular substrate is fixedly installed on the CNC wire cutting machine tool according to the positioning groove on the rectangular substrate, and the positioning groove cooperates with the positioning pin on the CNC wire cutting machine tool; S42: A combination of tungsten wire and molybdenum wire is selected as the electrode wire, and the discharge gap is set according to the diameter of the electrode wire and the material properties of the rectangular substrate. S43: Mix the surfactant and deionized water evenly according to the preset ratio and inject it into the machine tool working fluid tank; S44: Start the CNC wire EDM machine to cut the rectangular substrate. During the cutting process, the electrode wire, under the flushing of the working fluid, cuts the workpiece layer by layer through high-frequency pulse discharge. The vibration of the machine tool table is monitored in real time by a dynamic vibration damping device. When the vibration amplitude exceeds the set threshold, the dynamic vibration damping device immediately generates a reverse force to counteract the vibration. The change in electrode wire diameter is measured in real time by a laser rangefinder. When the electrode wire diameter decreases, the system automatically adjusts the cutting path to compensate for the dimensional deviation caused by electrode wire wear and ensure the cutting dimensional accuracy. At the same time, when cutting the corner of the E-shaped workpiece, the machine tool control system automatically reduces the cutting speed to reduce the discharge gap error at the corner and ensure the cutting accuracy at the corner.

6. The method for manufacturing a metal substrate for semiconductor packaging according to claim 1, characterized in that, The vertical rectangular substrate obtained after cleaning and grinding with acetone includes: S61: Place the vertical rectangular substrate obtained after grinding into an ultrasonic cleaning tank containing acetone solution, and start the microwave-ultrasonic combined cleaning equipment to clean the vertical rectangular substrate. S62: Place the vertical rectangular substrate that has been cleaned in step S61 into an ultrasonic cleaning tank filled with clean water, and start the microwave-ultrasonic combined cleaning equipment to clean the vertical rectangular substrate again to obtain the cleaned vertical rectangular substrate.

7. The method for manufacturing a metal substrate for semiconductor packaging according to claim 1, characterized in that, Step S7 includes: S71: Use a machine vision system to photograph the surface of a vertical rectangular substrate and use image recognition algorithms to detect whether there are appearance defects on the surface; S72: Uses a laser displacement sensor to scan a vertical rectangular substrate from multiple angles and measure its dimensional data; S73: Use a spectrometer to analyze the surface of the coating to determine the composition and thickness of the coating; S74: The test data is compared with the preset standard. For vertical rectangular substrates that do not meet the standard, they are automatically marked and removed by a robotic arm.

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