Method and structure for laser segmentation
CN120347392APending Publication Date: 2025-07-22II VI ADVANCED MATERIALS LLC
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Patent Information
- Application Number
- CN202410681573.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-01-22
- Filing Date
- 2024-05-29
- Publication Date
- 2025-07-22
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Figure CN120347392A_ABST
Abstract
The present invention relates to a laser splittable structure (e.g., a semiconductor wafer), a method for manufacturing a laser splittable structure, a system for laser splitting a structure, and a method for laser splitting a structure. As a non-limiting example, various aspects of the present disclosure provide a laser-divisible semiconductor wafer, a laser-divisible structure (e.g., a semiconductor wafer), a method for manufacturing a laser-divisible structure, a system for laser-dividing a structure, and a method for laser-dividing a structure, wherein the laser divisible structure includes a first layer characterized by a first laser ablation threshold and a second layer characterized by a second laser ablation threshold less than the first laser ablation threshold.
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