Method and structure for laser segmentation

CN120347392APending Publication Date: 2025-07-22II VI ADVANCED MATERIALS LLC
0 Cites -1 Cited by

Patent Information

Application Number
CN202410681573.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-01-22
Filing Date
2024-05-29
Publication Date
2025-07-22

Smart Images

  • Figure CN120347392A_ABST
    Figure CN120347392A_ABST
Patent Text Reader

Abstract

The present invention relates to a laser splittable structure (e.g., a semiconductor wafer), a method for manufacturing a laser splittable structure, a system for laser splitting a structure, and a method for laser splitting a structure. As a non-limiting example, various aspects of the present disclosure provide a laser-divisible semiconductor wafer, a laser-divisible structure (e.g., a semiconductor wafer), a method for manufacturing a laser-divisible structure, a system for laser-dividing a structure, and a method for laser-dividing a structure, wherein the laser divisible structure includes a first layer characterized by a first laser ablation threshold and a second layer characterized by a second laser ablation threshold less than the first laser ablation threshold.
Need to check novelty before this filing date? Find Prior Art