Coil, coil set and semiconductor process equipment

Abstract

The application discloses a coil, a coil group and a semiconductor process equipment, and belongs to the technical field of semiconductor processing. The disclosed coil is used for a semiconductor process equipment, and the coil comprises a connecting section and at least two concentrically arranged circular arc sections. The coil is a three-dimensional coil, the highest point of the three-dimensional coil is located on a first plane, the lowest point of the three-dimensional coil is located on a second plane, the first plane is not coplanar with the second plane, the connecting section is arranged between adjacent two circular arc sections, and the center of the circle passing through each circular arc section is coincident with the center of the three-dimensional coil. The above scheme can solve the problem that the coil in the related art is easy to affect the processing effect of a wafer.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically relating to a coil, a coil assembly, and semiconductor process equipment. Background Technology

[0002] Coils in semiconductor process equipment can excite process gases introduced into the process chamber into a plasma state, thereby processing wafers. The top of the process chamber has an opening, which is usually sealed by a dielectric window of the semiconductor process equipment.

[0003] The coils involved in the related technologies are usually planar coils, meaning that the distance between all parts of the coil and the dielectric window is equal and relatively close. This makes the high-voltage end of the coil close to the dielectric window, which can easily lead to a strong capacitive coupling effect between the coil and ground, resulting in the dielectric window being sputtered, which in turn can easily affect the wafer processing effect.

[0004] Therefore, the coils involved in the related technologies have the problem of easily affecting the processing effect on the wafer. Summary of the Invention

[0005] This application discloses a coil, a coil assembly, and semiconductor process equipment to solve the problem that coils in related technologies can easily affect the processing effect on wafers.

[0006] To solve the above-mentioned technical problems, this application adopts the following technical solution: A coil for use in semiconductor process equipment, the coil comprising a connecting section and at least two concentrically arranged arc segments. The coil is a three-dimensional coil, and the plane where the highest point of the three-dimensional coil is located is the first plane, and the plane where the lowest point of the three-dimensional coil is located is the second plane. The first plane and the second plane are not coplanar, and two adjacent arc segments are connected by the connecting segment. The center of the circumference of each arc segment coincides with the center of the three-dimensional coil.

[0007] A coil assembly includes at least two coils, at least one of which is the coil described above, the at least two coils are connected in parallel and staggered, and the at least two coils are arranged in a circular array around the center point of the coil.

[0008] A coil assembly, comprising: A first coil, the first coil comprising at least one coil as described above; A second coil, comprising at least one of the coils described above, surrounds the first coil.

[0009] A semiconductor process apparatus includes a dielectric window, a process chamber, and the coil assembly described above, wherein the dielectric window seals the top opening of the process chamber, and the coil assembly is disposed on the dielectric window.

[0010] The technical solution adopted in this application can achieve the following beneficial effects: In this application, since the coil is a three-dimensional coil, meaning it has a highest point and a lowest point, and the first plane where the highest point is located is not coplanar with the second plane where the lowest point is located, the highest point of the three-dimensional coil can be used for inputting radio frequency power, and the lowest point can be used for grounding. This makes the area of ​​the three-dimensional coil near the dielectric window a low-voltage area, while the area far from the dielectric window is a high-voltage area. This keeps the high-voltage area of ​​the three-dimensional coil far from the dielectric window, reducing capacitive coupling effects and preventing sputtering of the dielectric window, thus avoiding affecting the wafer processing effect. Simultaneously, since the coil includes at least two concentric arc segments, meaning the diameters of the circumferences of each arc segment are different, and adjacent arc segments can be connected by connecting segments, the magnetic field range generated by the three-dimensional coil is larger. Furthermore, since the centers of the circumferences of each arc segment coincide with the center of the three-dimensional coil, the orthographic projection shape of the three-dimensional coil is close to a circle, ensuring the angular uniformity of the magnetic field distribution within the process chamber, thereby further ensuring the wafer processing effect. Therefore, the coil disclosed in this application can solve the problem that the coils involved in the related technology can easily affect the processing effect on the wafer. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the coil assembly disclosed in an embodiment of this application; Figure 2 This is a top view of the coil assembly disclosed in an embodiment of this application; Figures 3 to 5 These are schematic diagrams illustrating the structures of different first coils disclosed in embodiments of this application; Figure 6 This is a top view of the first coil disclosed in an embodiment of this application; Figures 7 to 9 These are schematic diagrams illustrating the structures of different second coils disclosed in the embodiments of this application; Figure 10 This is a top view of the second coil disclosed in an embodiment of this application; Figures 11 to 13 This is a schematic diagram of the structure of different connecting segments connecting two adjacent arc segments disclosed in the embodiments of this application; Figure 14 This is a spatial distribution diagram of the magnetic field in a certain horizontal cross section within the plasma region below the dielectric window disclosed in the embodiments of this application; Figure 15This is a schematic diagram comparing the magnetic field distribution in the circumferential direction of the coil disclosed in the embodiments of this application with that of an involute coil in conventional technology.

[0012] Explanation of reference numerals in the attached figures: 110 - First coil, 111 - First arc segment, 112 - Second arc segment, 113 - Third arc segment, 120 - Second coil, 121 - Fourth arc segment, 122 - Fifth arc segment, 123 - Sixth arc segment, 130 - Arc segment, 140 - First sub-coil, 150 - Second sub-coil; 310-Connecting section; 410 - First mounting hole, 420 - Second mounting hole. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0014] The coil disclosed in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0015] Please refer to Figures 1-15 This application discloses a coil, which includes a connecting segment 310 and at least two concentrically arranged arc segments 130.

[0016] The coil disclosed in this application is used in semiconductor processing equipment. Current can be passed through the coil to generate an induced magnetic field around it, thereby facilitating wafer processing by the semiconductor equipment. The coil disclosed in this application can be a three-dimensional coil, meaning it has a highest point and a lowest point. The plane containing the highest point of the three-dimensional coil can be a first plane, and the plane containing the lowest point can be a second plane. The first plane and the second plane are parallel, meaning they are not coplanar. Optionally, both the first and second planes can be parallel to the dielectric window of the semiconductor processing equipment, and the distance between the first plane and the dielectric window can be greater than the distance between the second plane and the dielectric window, meaning the second plane is closer to the dielectric window. It should be noted that the highest and lowest points of the coil are determined by the height of points on the line when the coil is simplified to a line, without considering the cross-sectional dimensions of the coil itself.

[0017] The above-mentioned at least two concentric arc segments 130 are the main structure of the coil, and both the connecting segment 310 and the arc segment 130 are conductive. Two adjacent arc segments 130 can be connected by the connecting segment 310 to form a conductive coil. That is, the coil disclosed in this application is formed by splicing together multiple concentric arc segments 130.

[0018] Because each arc segment 130 is concentrically arranged, meaning that the diameter of the circumference of each arc segment 130 is different, and consequently the diameter of the circumference of two adjacent arc segments 130 is different, and the center of the circumference of each arc segment 130 coincides with the center of the three-dimensional coil, the entire coil is roughly circular, that is, the shape of the orthographic projection of the entire coil is close to a perfect circle. This makes the distribution of the induced magnetic field generated by the concentric circular coil more uniform, and thus the angular uniformity of the magnetic field distribution in the process chamber of the semiconductor process equipment is better.

[0019] Please refer to the details. Figure 14 and Figure 15 , Figure 14 This is a spatial distribution diagram of the magnetic field generated by the coil within a certain horizontal cross-section. Figure 15 yes Figure 14 The diagram shows the spatial distribution of the magnetic field along the circumference, where... Figure 15 The dotted lines in the text represent the concentric circle coils disclosed in this application. Figure 15 The straight lines in the diagram represent conventional involute coils, and Figure 15 The horizontal axis in the diagram represents the angle. Figure 15 The vertical axis in the graph represents the normalized magnetic field strength value, according to... Figure 15 It is understood that the maximum and minimum values ​​of the above-mentioned values ​​generated by the concentric circular coil in the circumferential direction disclosed in this application differ by about 2.6%, while the maximum and minimum values ​​of the above-mentioned values ​​generated by the involute coil in the circumferential direction differ by about 4.0%. Therefore, the difference between the maximum and minimum values ​​of the above-mentioned values ​​generated by the concentric circular coil in the circumferential direction disclosed in this application is smaller, that is, the magnetic field distribution generated by the concentric circular coil disclosed in this application is more uniform, which can ultimately improve the uniformity of wafer processing by semiconductor process equipment.

[0020] In this application, since the coil is a three-dimensional coil, that is, a three-dimensional coil has a highest point and a lowest point, and the first plane where the highest point is located is not coplanar with the second plane where the lowest point is located, this application can use the highest point of the three-dimensional coil for inputting radio frequency power and the lowest point of the three-dimensional coil for grounding, so that the area of ​​the three-dimensional coil near the dielectric window is a low-voltage area and the area far away from the dielectric window is a high-voltage area. This makes the high-voltage area of ​​the three-dimensional coil far away from the dielectric window, which can reduce capacitive coupling effect, thereby avoiding sputtering of the dielectric window and thus avoiding affecting the wafer processing effect.

[0021] Meanwhile, since the coil includes at least two concentric arc segments 130, meaning that the diameters of the circumferences of each arc segment 130 are different, and adjacent arc segments 130 can be connected by connecting segments 310, the magnetic field range generated by this three-dimensional coil is relatively large. Furthermore, since the centers of the circumferences of each arc segment 130 coincide with the center of the three-dimensional coil, the orthographic projection of the three-dimensional coil is nearly circular, ensuring the angular uniformity of the magnetic field distribution within the process chamber, thereby further ensuring the wafer processing effect. Therefore, the coil disclosed in this application can solve the problem that coils in related technologies easily affect the wafer processing effect.

[0022] Alternatively, please refer to Figure 3 and Figure 4 The first end of the coil is used to input radio frequency power. Specifically, the first end of the coil can be connected to the radio frequency power supply of the semiconductor process equipment so that the radio frequency power supply can supply power to the coil. That is, the first end of the coil can be the radio frequency input terminal so that the voltage of the first end of the coil is higher. The second end of the coil is used to ground. That is, the second end of the coil can be the ground terminal so that the voltage of the second end of the coil is lower.

[0023] In the direction extending from the first end of the coil to the second end, the distance between the coil and the second plane can gradually decrease. That is, the second end of the coil is closer to the second plane than the first end. Since the second plane is closer to the dielectric window than the first plane, this moves the first end of the coil away from the dielectric window, and the second end closer to the dielectric window. In other words, the high-voltage end of the coil is away from the dielectric window, and the low-voltage end is close to the dielectric window. This effectively reduces capacitive coupling effects while ensuring the coupling efficiency of the coil's RF power, thus ensuring the wafer processing effect. Furthermore, since the distance between the coil and the second plane can gradually decrease, the size of the coil gradually changes, resulting in a simpler structure and easier processing. Of course, in other embodiments, in the direction extending from the first end of the coil to the second end, the distance between the coil and the second plane can first decrease, then increase, and finally decrease again.

[0024] Optionally, the first end of the coil can be located on the innermost arc segment 130 of the coil, and the second end of the coil can be located on the outermost arc segment 130 of the coil. Please refer to [reference needed] for details. Figure 3In the direction extending from the first end of the coil to the second end of the coil, the coil may include a first arc segment 111, a second arc segment 112, and a third arc segment 113 connected in sequence. That is, the voltage at the first arc segment 111 is greater than the voltage at the second arc segment 112, the voltage at the second arc segment 112 is greater than the voltage at the third arc segment 113, and the distance between the first arc segment 111 and the second plane is greater than the distance between the second arc segment 112 and the second plane, and the distance between the second arc segment 112 and the second plane is greater than the distance between the third arc segment 113 and the second plane.

[0025] In this embodiment, since the voltage at the first arc segment 111 is greater than the voltage at the second arc segment 112, and the voltage at the second arc segment 112 is greater than the voltage at the third arc segment 113, and the heights of the first arc segment 111, the second arc segment 112, and the third arc segment 113 gradually decrease, so that the coil as a whole is conical, that is, the distance between the first arc segment 111 and the plasma in the process chamber, the distance between the second arc segment 112 and the plasma in the process chamber, and the distance between the third arc segment 113 and the plasma in the process chamber gradually decrease, the capacitive coupling effect generated by the first arc segment 111, the second arc segment 112, and the third arc segment 113 gradually weakens. In other words, this arrangement can effectively reduce the capacitive coupling effect.

[0026] Furthermore, since the third arc segment 113 is closest to the dielectric window and has the largest diameter of the circle containing it (i.e., the length of the third arc segment 113 is relatively long), the magnetic field generated by the third arc segment 113 is stronger. This means the third arc segment 113 can generate a sufficiently large induced magnetic field within the process chamber to maintain the plasma and ensure the coupling efficiency of the radio frequency energy. Of course, in other embodiments, in the direction extending from the first end of the coil to the second end, the coil may only include the first arc segment 111 and the second arc segment 112 connected in sequence, or more arc segments 130.

[0027] In another optional embodiment, the first end of the coil can be located on the outermost arc segment 130 of the coil, and correspondingly, the second end of the coil can be located on the innermost arc segment 130 of the coil. Please refer to [the relevant documentation] for details. Figure 4In the direction extending from the second end of the coil to the first end of the coil, the coil may include a first arc segment 111, a second arc segment 112, and a third arc segment 113 connected in sequence. That is, the voltage at the first arc segment 111 is less than the voltage at the second arc segment 112, the voltage at the second arc segment 112 is less than the voltage at the third arc segment 113, and the distance between the first arc segment 111 and the second plane is less than the distance between the second arc segment 112 and the second plane, and the distance between the second arc segment 112 and the second plane is less than the distance between the third arc segment 113 and the second plane.

[0028] In this embodiment, since the voltage at the first arc segment 111 is less than the voltage at the second arc segment 112, the voltage at the second arc segment 112 is less than the voltage at the third arc segment 113, and the heights of the first arc segment 111, the second arc segment 112, and the third arc segment 113 gradually increase, the coil as a whole is inverted conical in shape. That is, the distances between the third arc segment 113 and the plasma in the process chamber, the distances between the second arc segment 112 and the plasma in the process chamber, and the distances between the first arc segment 111 and the plasma in the process chamber gradually decrease. This makes the capacitive coupling effect generated by the third arc segment 113, the second arc segment 112, and the first arc segment 111 gradually weaken. In other words, this arrangement can effectively reduce the capacitive coupling effect.

[0029] Furthermore, since the third arc segment 113 is furthest from the dielectric window, it is convenient to connect the third arc segment 113 to the aforementioned RF power supply. The first arc segment 111, being closest to the dielectric window, generates a stronger magnetic field. This means the first arc segment 111 can generate a larger induced magnetic field intensity within the process chamber to maintain the plasma and ensure efficient coupling of RF energy. Of course, in other embodiments, in the direction extending from the second end of the coil to the first end, the coil may only include the first arc segment 111 and the second arc segment 112 connected in sequence, or more arc segments 130.

[0030] Alternatively, please refer to Figure 7 The first end of the coil is used to input radio frequency power, that is, the first end of the coil can be the radio frequency input terminal and is connected to the aforementioned radio frequency power supply so that the voltage at the first end of the coil is relatively high. The second end of the coil is used to ground through a capacitor connected in series, that is, the second end of the coil can be the ground terminal and is connected in series with the capacitor. By adjusting the capacitance value of the capacitor, the voltage at the second end of the coil is also relatively high, and the voltage at the second end of the coil is approximately equal to the voltage at the first end. It can be seen that both the first end and the second end of the coil are high voltage terminals, and the minimum voltage is located at the middle position along the length of the coil.

[0031] In this embodiment, the distance between the coil and the second plane first decreases and then increases in the direction extending from the first end to the second end of the coil. That is, both the first and second ends of the coil are relatively far from the second plane, and consequently, both ends are far from the dielectric window. This means all high-voltage terminals of the coil are far from the dielectric window, which facilitates a more effective reduction of capacitive coupling effects. Simultaneously, since both the first and second ends of the coil are far from the dielectric window, the portion between them is relatively closer to the dielectric window, meaning the voltage in this portion is relatively low. This effectively reduces capacitive coupling effects while ensuring the coupling efficiency of the coil's RF power, thus ensuring the wafer processing effect. Of course, in other embodiments, the distance between the coil and the second plane in the direction extending from the first end to the second end of the coil can gradually increase or gradually decrease.

[0032] Alternatively, please refer to Figure 7 In the direction extending from the first end of the coil to the second end, the coil may include a fourth arc segment 121, a fifth arc segment 122, and a sixth arc segment 123 connected in sequence. The distance between the fourth arc segment 121 and the second plane is equal to the distance between the sixth arc segment 123 and the second plane, and the distance between the fourth arc segment 121 and the second plane is greater than the distance between the fifth arc segment 122 and the second plane. In this embodiment, the height of the fourth arc segment 121 and the sixth arc segment 123 are the same, and both are greater than the height of the fifth arc segment 122. At this time, the fifth arc segment 122 is closer to the second plane, and thus closer to the dielectric window. Furthermore, the length of the fifth arc segment 122 is relatively long, which allows the fifth arc segment 122 to generate a larger induced magnetic field strength within the process chamber to maintain the plasma, thereby ensuring the coupling efficiency of radio frequency energy. This configuration, to a certain extent, can ensure the processing effect on the wafer. Of course, in other embodiments, the coil may only include the connected fourth arc segment 121 and the sixth arc segment 123, and the height of the area where the fourth arc segment 121 and the sixth arc segment 123 are connected is lower than the height of the other areas of the fourth arc segment 121 and the sixth arc segment 123, or more arc segments 130.

[0033] Alternatively, please refer to Figure 5The first end of the coil can be used to input radio frequency power, and the second end of the coil can be used to ground through a series-connected capacitor. In the direction extending from the first end of the coil to the second end of the coil, the distance between the coil and the second plane first decreases and then increases. Specifically, the coil may include a first arc segment 111, a second arc segment 112 and a third arc segment 113 connected in sequence. The diameters of the circumferences of the first arc segment 111, the second arc segment 112 and the third arc segment 113 can all be smaller than the diameters of the circumferences of the fourth arc segment 121, the fifth arc segment 122 and the sixth arc segment 123, so that coils of different sizes can be adapted to different semiconductor process equipment.

[0034] In this embodiment, the distance between the first arc segment 111 and the second plane can be equal to the distance between the third arc segment 113 and the second plane, and the distance between the first arc segment 111 and the second plane can be greater than the distance between the second arc segment 112 and the second plane. That is, in this embodiment, the height of the first arc segment 111 and the height of the third arc segment 113 are the same, and both are greater than the height of the second arc segment 112. At this time, the second arc segment 112 is closer to the second plane, and thus closer to the dielectric window, and the length of the second arc segment 112 is relatively long, which makes the magnetic field generated by the second arc segment 112 stronger. This can, to a certain extent, ensure the processing effect on the wafer. Of course, in other embodiments, the coil may include only the connected first arc segment 111 and the third arc segment 113, and the height of the area where the first arc segment 111 and the third arc segment 113 are connected is lower than the height of the other areas of the first arc segment 111 and the third arc segment 113.

[0035] Optionally, the first end of the coil is used for inputting radio frequency power, and the second end of the coil is used for grounding. The first end of the coil can be located on the innermost arc segment 130 of the coil, and the second end of the coil can be located on the outermost arc segment 130 of the coil. Please refer to [reference needed] for details. Figure 8 In the direction extending from the first end of the coil to the second end of the coil, the coil may include a fourth arc segment 121, a fifth arc segment 122 and a sixth arc segment 123 connected in sequence, and the distance between the coil and the second plane gradually decreases, that is, the fourth arc segment 121 is farther away from the second plane and thus farther away from the dielectric window, which can effectively reduce the capacitive coupling effect, while the sixth arc segment 123 is closer to the second plane and thus closer to the dielectric window, which can ensure the coupling efficiency of radio frequency energy.

[0036] Alternatively, please refer to Figure 9The first end of the coil is used to input radio frequency power, and the second end of the coil is used to ground. The first end of the coil can be located on the outermost arc segment 130 of the coil, and correspondingly, the second end of the coil can be located on the innermost arc segment 130 of the coil. In the direction extending from the second end of the coil to the first end of the coil, the coil can include a fourth arc segment 121, a fifth arc segment 122, and a sixth arc segment 123 connected in sequence. The distance between the coil and the second plane gradually increases, that is, the sixth arc segment 123 is farther away from the second plane and thus farther away from the dielectric window. This can effectively reduce the capacitive coupling effect, while the fourth arc segment 121 is closer to the second plane and thus closer to the dielectric window. This can ensure the coupling efficiency of radio frequency energy.

[0037] Alternatively, please refer to Figure 1 The diameters of the circumferences of the fourth arc segment 121, the fifth arc segment 122, and the sixth arc segment 123 can all be larger than the diameters of the circumferences of the first arc segment 111, the second arc segment 112, and the third arc segment 113, respectively, to accommodate coils of different sizes in different semiconductor process equipment. Furthermore, the heights of the first arc segment 111, the fourth arc segment 121, and the sixth arc segment 123 can be the same and all greater than the height of the second arc segment 112. The heights of the fifth arc segment 122 and the third arc segment 113 can be the same and all less than the height of the second arc segment 112. Of course, this embodiment does not impose specific limitations on these aspects.

[0038] Optionally, the connecting segment 310 can be a straight connecting segment extending along the axial direction of the three-dimensional coil; please refer to [reference needed]. Figure 11 The two adjacent arc segments 130 can be located on opposite sides of the straight connecting segment, so that while the straight connecting segment connects the two adjacent arc segments 130, the distance between the two adjacent arc segments 130 and the second plane is different, thus making the coil disclosed in this application a three-dimensional coil.

[0039] Alternatively, please refer to Figure 12 The connecting segment 310 may include at least two connected arc-shaped connecting segments with opposite bending directions, so that two adjacent arc segments 130 can smoothly transition through the connecting segment 310 while achieving the effect of connection.

[0040] Alternatively, please refer to Figure 13The connecting segment 310 can be an inclined connecting segment that extends at an angle relative to the axial direction of the three-dimensional coil. This inclined connecting segment is relatively simple to manufacture and can make the distance between the ends of two adjacent arc segments 130 larger. Therefore, while keeping the total length of the coil unchanged, the length of each arc segment 130 can be designed to be smaller, which can reduce costs.

[0041] Furthermore, the three types of connecting segments 310 described above ensure that two adjacent arc segments 130 do not overlap in the axial direction of the three-dimensional coil. This can increase the total length of the coil to a certain extent, thereby expanding the magnetic field range generated by the coil disclosed in this application. Of course, in other embodiments, the ends of two adjacent arc segments 130 can be stacked in the axial direction of the three-dimensional coil and connected by connecting segments 310.

[0042] Optionally, the distances between all points of the same arc segment 130 and the second plane are equal, meaning that all points of the same arc segment 130 are within the same plane. This ensures that the magnetic field generated at all points of the same arc segment 130 is more uniform within the same horizontal cross-section, thereby enabling uniform wafer processing. Of course, in other embodiments, the distances between all points of the same arc segment 130 and the second plane may not be equal.

[0043] Optionally, two adjacent arc segments 130 may be located on different planes to make the coil disclosed in this application a three-dimensional coil. This arrangement makes the overall structure of the three-dimensional coil simpler, more regular, and has a better appearance. Of course, in other embodiments, only some of the two adjacent arc segments 130 are located on different planes, while the remaining adjacent arc segments 130 may be located on the same plane.

[0044] Alternatively, please refer to Figure 6 and Figure 10 In the direction extending from the innermost to the outermost ring of the three-dimensional coil, the distance between the connecting segment 310 and the center of the three-dimensional coil gradually increases, thereby achieving a transition connection between each arc segment 130. Furthermore, the center of the circumference of each arc segment 130 coincides with the center of the three-dimensional coil. This arrangement further makes the orthographic projection shape of the coil disclosed in this application approximately circular, ensuring the angular uniformity of the magnetic field distribution within the process chamber, thereby further ensuring the processing effect on the wafer. Of course, in other embodiments, the connecting segment 310 can extend radially along each arc segment 130, meaning the connecting segment 310 only serves to connect each arc segment 130 and does not serve to transition between them.

[0045] Optionally, the central angle of each arc segment 130 can be less than 180°, that is, the number of turns occupied by the circumferential dimension of each arc segment 130 can be less than 0.5 turns, in order to avoid the problem of interference in space between at least two parallel and staggered coils as described later. Of course, in other embodiments, the central angle of each arc segment 130 can be equal to or greater than 180°.

[0046] Optionally, the number of turns occupied by the circumferential dimension of each arc segment 130 can be equal to facilitate the processing of each arc segment 130. Of course, the number of turns occupied by the circumferential dimension of each arc segment 130 can also be unequal, and the embodiments of this application do not impose specific limitations on this.

[0047] Furthermore, considering the requirements for coil machining, reliability, and maintaining radio frequency energy coupling efficiency, this application can divide the coil into three segments, such as the first arc segment 111, the second arc segment 112, and the third arc segment 113 mentioned above, or the fourth arc segment 121, the fifth arc segment 122, and the sixth arc segment 123 mentioned above. The length of each arc segment 130 is less than 1 / 3 of the total number of turns of the coil. For example, if the total number of turns of the coil is 1.5, it is preferable that the length of each arc segment 130 is less than 0.5 turns. If the total number of turns of the coil is 2, it is preferable that the length of each arc segment 130 is less than 2 / 3 turns.

[0048] Optionally, this application also discloses a coil assembly comprising at least two coils, at least one of which is the coil described above. The at least two coils are connected in parallel and staggered. Please refer to [reference needed] for details. Figure 6 and Figure 10 The at least two coils are arranged in a circular array around the center point of the coil. By using multiple coils that are connected in parallel and staggered, this application can increase the strength of the magnetic field generated by the entire coil group, thereby improving the wafer processing efficiency and improving the wafer processing effect.

[0049] Optionally, the coil group may include two coils, specifically a first sub-coil 140 and a second sub-coil 150. The first sub-coil 140 and the second sub-coil 150 are symmetrical about the center of the coil, that is, they are rotationally symmetrically distributed along the axial direction of the coil at 180°. The line connecting the innermost end of the first sub-coil 140 and the innermost end of the second sub-coil 150 passes through the center of the coil. In the axial direction of the coil, the orthographic projections of the corresponding arc segments 130 of the first sub-coil 140 and the second sub-coil 150 are located on both sides of the connecting line. This makes the coil group closer to a perfect circle as a whole, and at the same time makes the magnetic field generated on both sides of the coil group more uniform. That is, in the circumferential direction of the coil group, the magnetic field generated at all points is relatively uniform, which can ensure the uniformity of wafer processing. In other embodiments, the coil group may include more sub-coils, for example, n sub-coils, and the sub-coils are rotationally symmetrically distributed along the axial direction of the coil at 360° / n.

[0050] Optionally, this application also discloses a coil assembly, including: a first coil 110, for details please refer to Figure 6 The first coil 110 may include at least one coil as described above; the second coil 120, please refer to [reference needed]. Figure 10 The second coil 120 may also include at least one of the coils described above, and the second coil 120 may wrap around the first coil 110, as detailed in the following reference. Figure 1 and Figure 2 .

[0051] In this embodiment, because the second coil 120 surrounds the first coil 110, the overall space occupied by the coil group is larger, resulting in a wider range of magnetic fields. This is beneficial for the uniform processing of wafers by semiconductor process equipment. Of course, in other embodiments, the second coil 120 may not surround the first coil 110, or the coil group may not include the second coil 120.

[0052] In this embodiment, the first end of the first coil 110 is used to input radio frequency power, that is, the first end of the first coil 110 can be an radio frequency input terminal, so that the first end of the first coil 110 is a high voltage terminal. The second end of the first coil 110 is used for grounding, that is, the second end of the first coil 110 can be a ground terminal, so that the second end of the first coil 110 is a low voltage terminal. In this application, the second end of the first coil 110 can be positioned closer to the dielectric window than the first end of the first coil 110, that is, the high voltage terminal of the first coil 110 is positioned further away from the dielectric window, so as to effectively reduce capacitive coupling effect; the first end of the second coil 120 is used to input radio frequency power, that is, the second coil 120... The first end can be an RF input terminal, so that the first end of the second coil 120 is a high-voltage terminal. The second end of the second coil 120 is used to ground through a capacitor connected in series, that is, the second end of the second coil 120 can be a ground terminal, and the second end of the second coil 120 is used to be connected in series with the capacitor. By adjusting the capacitance value of the capacitor, the voltage of the second end of the second coil 120 is also higher. That is, at this time, the two ends of the second coil 120 are uniformly high-voltage terminals, and the voltages of the two ends of the second coil 120 are approximately equal. In this application, the first end and the second end of the second coil 120 can be set away from the dielectric window, so as to effectively reduce the capacitive coupling effect.

[0053] Alternatively, the first end of the first coil 110 can be used as an input radio frequency (RF) power terminal, making it a high-voltage terminal. The second end of the first coil 110 can be grounded via a series-connected capacitor, making it a ground terminal. The second end of the first coil 110 can also be connected in series with the capacitor, and by adjusting the capacitance value, the second end of the first coil 110 can also be a high-voltage terminal. In this case, both ends of the first coil 110 are uniformly high-voltage terminals, and the voltages across the two ends of the first coil 110 are approximately equal. This application allows the first end of the first coil 110 and the second end of the first coil 110 to be grounded. The second ends of the first coil 110 are all located away from the dielectric window to effectively reduce capacitive coupling effects. The first end of the second coil 120 is used for inputting radio frequency power, that is, the first end of the second coil 120 can be the radio frequency input terminal, so that the first end of the second coil 120 is the high voltage terminal. The second end of the second coil 120 is used for grounding, that is, the second end of the second coil 120 can be the ground terminal, so that the second end of the second coil 120 is the low voltage terminal. In this application, the second end of the second coil 120 can be located closer to the dielectric window than the first end of the second coil 120, that is, the high voltage terminal of the second coil 120 is located away from the dielectric window, which can effectively reduce capacitive coupling effects.

[0054] Optionally, this application also discloses a semiconductor process apparatus, including a dielectric window, a process chamber, and the coil assembly described above. The dielectric window seals the top opening of the process chamber, that is, the dielectric window can serve as a top cover of the process chamber, and the coil assembly can be disposed on the dielectric window.

[0055] Optionally, the semiconductor process equipment may further include a coil support bracket, which is disposed on the dielectric window and is used to support the coil assembly. That is, there is a certain installation space between the coil support bracket and the dielectric window, and the coil assembly can be located in the installation space. In the specific installation of the coil assembly, that is, in the specific installation of the above-mentioned at least two coils or the first coil 110 and the second coil 120, taking the installation of the above-mentioned at least two coils as an example, the above-mentioned at least two coils can be installed on the coil support bracket using different connectors.

[0056] Taking the installation of the first coil 110 and the second coil 120 as an example, the coil support bracket may be provided with a plurality of first connecting holes and second connecting holes spaced apart. The first coil 110 may be provided with a plurality of first mounting holes 410 spaced apart, and the second coil 120 may be provided with a plurality of second mounting holes 420 spaced apart. In this application, a first connector may be used to connect the coil support bracket and the first coil 110. Specifically, one end of the first connector passes through the first connecting hole and is connected to the first mounting hole 410. In this application, a second connector may be used to connect the coil support bracket and the second coil 120. Specifically, one end of the second connector passes through the second connecting hole and is connected to the second mounting hole 420. Thus, the purpose of installing both the first coil 110 and the second coil 120 on the coil support bracket can be achieved, thereby achieving the purpose of setting the coil group on the dielectric window so that the semiconductor process equipment can perform wafer processing operations.

[0057] Optionally, the distance between the highest position of the first coil 110 and the upper surface of the dielectric window can be between 25mm and 60mm, the distance between the highest position of the second coil 120 and the upper surface of the dielectric window can also be between 25mm and 60mm, the distance between the lowest position of the first coil 110 and the upper surface of the dielectric window can be between 5mm and 30mm, and the distance between the lowest position of the second coil 120 and the upper surface of the dielectric window can also be between 5mm and 30mm. That is, the highest position of the first coil 110 and the highest position of the second coil 120 are the same, and the lowest position of the first coil 110 and the lowest position of the second coil 120 are also the same, so that the space occupied by the first coil 110 and the second coil 120 is the same in the axial direction. Of course, in other embodiments, the highest position of the first coil 110 and the highest position of the second coil 120 can also be different, and the lowest position of the first coil 110 and the lowest position of the second coil 120 can also be different.

[0058] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0059] The above description is merely an embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of this application should be included within the scope of the claims of this application.

Claims

1. A coil for use in semiconductor process equipment, characterized in that, The coil includes a connecting section (310) and at least two concentric arc segments (130). The coil is a three-dimensional coil, and the plane where the highest point of the three-dimensional coil is located is the first plane, and the plane where the lowest point of the three-dimensional coil is located is the second plane. The first plane and the second plane are not coplanar, and two adjacent arc segments (130) are connected by the connecting segment (310). The center of the circumference of each arc segment (130) coincides with the center of the three-dimensional coil. The highest point is used to input radio frequency power, and the lowest point is used for grounding. In the direction extending from the innermost to the outermost coil of the three-dimensional coil, the distance between the connecting segment (310) and the center of the three-dimensional coil gradually increases so that two adjacent arc segments (130) are transitionally connected.

2. The coil according to claim 1, characterized in that, The first end of the coil is used to input radio frequency power, the second end of the coil is used to ground, and the distance between the coil and the second plane gradually decreases in the direction extending from the first end of the coil to the second end of the coil.

3. The coil according to claim 2, characterized in that, The first end of the coil is located on the innermost arc segment (130) of the coil, and the second end of the coil is located on the outermost arc segment (130) of the coil. Extending from the first end to the second end of the coil, the coil includes a first arc segment (111), a second arc segment (112), and a third arc segment (113) connected sequentially. The distance between the first arc segment (111) and the second plane is greater than the distance between the second arc segment (112) and the second plane, and the distance between the second arc segment (112) and the second plane is greater than the distance between the third arc segment (113) and the second plane; or... The first end of the coil is located on the outermost arc segment (130) of the coil, and the second end of the coil is located on the innermost arc segment (130) of the coil. In the direction extending from the second end of the coil to the first end of the coil, the coil includes a first arc segment (111), a second arc segment (112), and a third arc segment (113) connected in sequence. The distance between the first arc segment (111) and the second plane is less than the distance between the second arc segment (112) and the second plane, and the distance between the second arc segment (112) and the second plane is less than the distance between the third arc segment (113) and the second plane.

4. The coil according to claim 1, characterized in that, The first end of the coil is used to input radio frequency power, and the second end of the coil is used to ground through a series-connected capacitor. In the direction extending from the first end of the coil to the second end of the coil, the distance between the coil and the second plane first decreases and then increases.

5. The coil according to claim 4, characterized in that, In the direction extending from the first end of the coil to the second end of the coil, the coil includes a fourth arc segment (121), a fifth arc segment (122), and a sixth arc segment (123) connected in sequence. The distance between the fourth arc segment (121) and the second plane is equal to the distance between the sixth arc segment (123) and the second plane. The distance between the fourth arc segment (121) and the second plane is greater than the distance between the fifth arc segment (122) and the second plane.

6. The coil according to claim 1, characterized in that, The connecting segment (310) is a straight connecting segment extending along the axial direction of the three-dimensional coil; or, The connecting segment (310) includes at least two connected arc-shaped connecting segments, wherein the bending directions of the at least two arc-shaped connecting segments are opposite; or, The connecting segment (310) is an inclined connecting segment that extends obliquely relative to the axial direction of the three-dimensional coil.

7. The coil according to claim 1, characterized in that, The distances between all points of the same arc segment (130) and the second plane are equal; and / or, The two adjacent arc segments (130) are in different planes.

8. The coil according to claim 1, characterized in that, The central angle of the arc segment (130) is less than 180°.

9. A coil assembly, characterized in that, It includes at least two coils, at least one of which is a coil according to any one of claims 1-8, the at least two coils are connected in parallel and staggered, and the at least two coils are arranged in a circular array around the center point of the coil.

10. The coil assembly according to claim 9, characterized in that, The coil group includes two coils, each coil including a first sub-coil (140) and a second sub-coil (150). The first sub-coil (140) and the second sub-coil (150) are symmetrical about the center of the coil. The line connecting the innermost end of the first sub-coil (140) and the innermost end of the second sub-coil (150) passes through the center of the coil. In the axial direction of the coil, the orthographic projections of the corresponding arc segments (130) of the first sub-coil (140) and the second sub-coil (150) are located on both sides of the connecting line.

11. A coil assembly, characterized in that, include: A first coil (110) comprising at least one coil according to any one of claims 1-8; The second coil (120) includes at least one coil according to any one of claims 1-8, the second coil (120) surrounding the first coil (110).

12. The coil assembly according to claim 11, characterized in that, The first end of the first coil (110) is used to input radio frequency power, and the second end of the first coil (110) is used to ground; the first end of the second coil (120) is used to input radio frequency power, and the second end of the second coil (120) is used to ground through a capacitor connected in series; or, The first end of the first coil (110) is used to input radio frequency power, and the second end of the first coil (110) is used to ground through a capacitor connected in series. The first end of the second coil (120) is used to input radio frequency power, and the second end of the second coil (120) is used to ground.

13. A semiconductor process apparatus, characterized in that, The device includes a dielectric window, a process chamber, and a coil assembly as described in any one of claims 9-12, wherein the dielectric window seals the top opening of the process chamber, and the coil assembly is disposed on the dielectric window.

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