Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. According to an embodiment, a semiconductor device may include: a channel portion including a core layer having a first doping type and a shell layer having a second doping type opposite to the first doping type stacked on each other; the source / drain parts are arranged on the two opposite sides of the channel part, and the source / drain parts have the first doping type; and a gate stack on the channel portion, in which the channel portion has a shape protruding toward the gate stack.

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