Semiconductor device and manufacturing method thereof
CN120390435APending Publication Date: 2025-07-29SOI MICRO CO LTD
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Patent Information
- Application Number
- CN202510386198.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2025-07-29
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Figure CN120390435A_ABST
Abstract
The invention discloses a semiconductor device and a manufacturing method thereof. According to an embodiment, a semiconductor device may include: a substrate; a gate stack on the substrate; the source / drain layers are arranged on the two opposite sides of the gate stack on the substrate, and at least one of the gate stack and the source / drain layers has the following morphology that an acute angle is formed between the bottom surface and the side wall.
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