Electronic device cover plate of glass fiber substrate and preparation process thereof

Abstract

The application discloses a glass fiber substrate electronic device cover plate and a processing technology thereof, and relates to the technical field of electronic cover plates. Step 1: cutting an epoxy glass fiber plate to obtain a glass fiber substrate; step 2: spraying silica glue water on a texture mold; by means of a roller, the texture is transferred on the surface of the glass fiber substrate, and then solidification and demolding are performed; a texture layer is formed; step 3: sequentially coating a monocrystalline silicon layer, a niobium oxide layer, a silicon dioxide layer and a silicon oxynitride layer on the surface of the texture layer; heat treatment is performed at 150-160 DEG C for 10-30 minutes; a hardening liquid is sprayed on the surface of the texture layer, and then solidification is performed; and an electronic device cover plate is obtained. The texture layer is transferred by means of the silica glue water, the interface of the subsequent coating layers is guaranteed, the niobium oxide layer, the silicon dioxide layer and the silicon oxynitride layer are sequentially coated on the surface of the texture layer, a multilayer composite structure is formed, the surface wear resistance, the optical property and the aesthetic property are improved, and finally the surface is further treated by means of the hardening liquid, and the surface hardness is effectively guaranteed.

Description

Technical Field

[0001] This invention relates to the field of electronic device cover technology, specifically to a glass fiber substrate electronic device cover and its manufacturing process. Background Technology

[0002] As a key functional material for protecting displays and internal components, electronic device covers must possess excellent surface hardness, abrasion resistance, optical transparency, and aesthetics to meet the high demands of modern electronic devices for durability and user experience. Currently, traditional cover materials are mainly divided into two categories: glass-based and polymer-based. While glass covers (such as soda-lime glass and aluminosilicate glass) have high hardness and excellent scratch resistance, their inherent brittleness and low fracture toughness make them prone to breakage when dropped, limiting their application in flexible electronic devices.

[0003] In contrast, composite materials, represented by epoxy fiberglass boards, are gradually becoming the preferred materials for electronic device covers due to their lightweight, high specific strength, excellent dimensional stability, and processability. However, the surface hardness (typically ≤3H) and abrasion resistance of epoxy fiberglass substrates are significantly lower than those of glass, making them prone to surface damage from friction or scratches over long-term use, affecting optical performance and aesthetics. To address this issue, existing technologies typically employ surface texturing or functional coatings to enhance performance. However, these methods still face the following technical bottlenecks: First, insufficient interlayer adhesion: poor chemical compatibility or stress mismatch between the textured layer and the coating can easily lead to interfacial delamination; second, a single coating cannot simultaneously meet the comprehensive requirements of high hardness, flexibility, and aesthetics; furthermore, there are issues such as uneven coating or internal cracks or bubbles caused by coating stress.

[0004] In summary, solving the above problems and preparing a glass fiber substrate cover for electronic devices is of great significance. Summary of the Invention

[0005] The purpose of this invention is to provide a glass fiber substrate cover plate for electronic devices and its manufacturing process, so as to solve the problems mentioned in the background art.

[0006] To solve the above-mentioned technical problems, the present invention provides the following technical solution:

[0007] A processing method for a glass fiber substrate cover plate for electronic devices includes the following steps:

[0008] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0009] Step 2: Spray silicone-containing liquid onto the texture mold; press the texture onto the surface of the fiberglass substrate using a roller, and cure; forming a texture layer;

[0010] Step 3: Sequentially deposit a single-crystal silicon layer, a niobium oxide layer, a silicon dioxide layer, and a silicon oxynitride layer on the surface of the textured layer; heat-treat at 150-160℃ for 10-30 minutes; spray a hardening liquid onto the surface and cure; obtain the cover plate for electronic devices.

[0011] More preferably, the silica-containing water comprises the following components: by weight, 12-17 parts polyurethane acrylate, 5-7 parts epoxy acrylate, 13-16 parts acrylic monomer, 10-12 parts mercaptosilicone polymer, and 2-3 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:(0.6-0.8):(1.2-2).

[0012] In a more optimized manner, the deposition process of the single crystal silicon layer is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 50-80°C, and the sputtering thickness is 2-3 nm.

[0013] The niobium oxide layer is deposited using the following process: high-purity Nb is used as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100-120℃, the power is set to 100-150W, the gas pressure is 0.5-2Pa, and the sputtering thickness is 50-100nm.

[0014] In a more optimized manner, the deposition process of the silicon dioxide layer is as follows: low-temperature chemical vapor deposition is performed using SiH4 as a precursor, with a temperature of 80-150°C, a power of 50-100W, a gas pressure of 50-150Pa, and a gas ratio of SiH4:N2O = 1:10; the deposition thickness is 50-100nm.

[0015] In a more optimized manner, the deposition process of the silicon oxynitride layer is as follows: low-temperature chemical vapor deposition is performed using SiH4 as a precursor at a temperature of 100-150°C, a power of 100-150W, a gas pressure of 100-200Pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness is 50-100nm.

[0016] A more optimized method for preparing the mercaptosilicone polymer is as follows: adding diethoxydimethylsilane, 3-mercaptopropyltrimethoxysilane, N-(3-trimethoxysilylpropyl)pyrrole, and hexamethyldisiloxane sequentially to deionized water, and adding acetic acid; mixing thoroughly, stirring and reacting at 70-75°C for 4-5 hours, washing, and drying to obtain the mercaptosilicone polymer.

[0017] More preferably, the mercaptosilicone polymer comprises the following components by weight: 23-25 ​​parts diethoxydimethylsilane, 18-20 parts 3-mercaptopropyltrimethoxysilane, 10-12 parts N-(3-trimethoxysilylpropyl)pyrrole, 16-18 parts hexamethyldisiloxane, 8-10 parts deionized water, and 1-3 parts acetic acid.

[0018] More optimized, the preparation method of the curing liquid is as follows: (1) 3-aminopropyltriethoxysilane is added to an ethanol aqueous solution and mixed evenly, stirred at 60-65°C for 4-4.5 hours, and the solvent is removed by rotary evaporation to obtain branched polysiloxane; (2) acetic acid is added to an ethanol aqueous solution and mixed evenly, and hexamethyldisiloxane, 3-glycidyl etheroxypropyltriethoxysilane and tetraethyl orthosilicate are added in sequence at a mass ratio of (1-1.5):(9.5-10):(5-5.5); stirred at 70-75°C for 5-6 hours to obtain silicone resin; (3) branched polysilane and silicone resin are mixed evenly at a mass ratio of 0.5:(1.5-1.8) to obtain curing liquid.

[0019] In a more optimized manner, in step 2, the curing of the silica gel-containing water is performed by irradiating it under an 8000-10000W ultraviolet lamp for 5-10 seconds; in step 3, the curing of the hardening liquid is performed by curing it at 100-110℃ for 1-2 hours.

[0020] An electronic device cover plate prepared by a processing technology of a glass fiber substrate.

[0021] Compared with the prior art, the beneficial effects achieved by the present invention are as follows: the present application uses a silicone-containing water-printed texture layer to ensure the interfacial properties of the subsequent coating; and a single crystal silicon layer, a niobium oxide layer, a silicon dioxide layer and a silicon oxynitride layer are sequentially coated on its surface to form a multi-layer composite structure, which improves the overall strength, surface wear resistance, optical properties and aesthetics; finally, a hardening liquid is used to further treat its surface to effectively ensure surface hardness.

[0022] (1) The solution uses silica-containing water as the texture layer, which includes polyurethane acrylate, epoxy acrylate, acrylic monomers, and mercaptosilicone polymer. It can form a double cross-linked network under ultraviolet light curing, effectively ensuring high toughness and weather resistance. Among them, mercaptosilicone polymer contains N-(3-trimethoxysilylpropyl)pyrrole, and the siloxane it contains can effectively improve the interfacial interaction with niobium metal, effectively improving the adhesion of the sputtered layer; at the same time, due to the toughness of the cross-linked network, it effectively buffers the sputtering stress and inhibits the generation of cracks. In addition, mercaptosilicone polymer effectively enhances the heat resistance of the texture layer, ensuring the normal operation of subsequent coatings and heat treatment, and suppressing internal defects.

[0023] (2) In the multilayer coating process of this scheme, the single-crystal silicon layer, niobium oxide layer, silicon dioxide layer, and silicon oxynitride layer are tightly bonded together through magnetron sputtering and low-temperature chemical vapor deposition, effectively suppressing interlayer interface defects and ensuring a strong bond between the functional layers; this enhances both aesthetics and overall strength. Simultaneously, the final heat treatment effectively improves crystallinity, alleviates stress, and improves interlayer performance. The multilayer coating structure combines high hardness and good optical transparency, making it suitable for the needs of high-end electronic device cover plates.

[0024] (3) Finally, a specific ratio of branched polysiloxane and silicone resin is used to form a hardening liquid; this can effectively cover the relevant coating surface and effectively improve the overall strength and surface performance of the electronic device cover. It should be noted that the proportion of relevant raw materials in the silicone resin, as well as the subsequent ratio of silicone resin to branched polysiloxane, also need to be limited. Otherwise, there will be an overly dense or overly loose cross-linking network. If it is too dense, it will restrict the movement of molecular chains, which will form internal stress during drying or heat treatment, leading to cracks in the coating; while if it is too loose, the hardness will decrease. Therefore, comprehensive control is required to ensure high surface hardness and increase the overall strength of the electronic device cover without internal defects. Detailed Implementation

[0025] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] It should be noted that the following quantities are by weight. There are no special restrictions on the manufacturers of the raw materials involved in this invention. Exemplary examples include: the epoxy fiberglass board is of type Zongsheng FR-4; the CAS number of diethoxydimethylsilane is 78-62-6; the CAS number of 3-mercaptopropyltrimethoxysilane is 4420-74-0; the CAS number of N-(3-trimethoxysilylpropyl)pyrrole is 80906-67-8; the CAS number of hexamethyldisiloxane is 107-46-0; and the CAS number of 3-aminopropyltriethoxysilane is... The CAS number for silane is 919-30-2; the CAS number for 3-glycidyl etheroxypropyltriethoxysilane is 2602-34-8; the CAS number for tetraethyl orthosilicate is 78-10-4; the grade for polyurethane acrylate is Jinhai-JS311; the grade for epoxy acrylate is Hubei Xinyuhong-N / A; the CAS number for photoinitiator TPO is 84434-11-7; and the CAS number for photoinitiator BP is 119-61-9. Acrylic monomers include 0.6:1.4 of hydroxyethyl acrylate and polyethylene glycol diacrylate. All of the above and other raw materials are commercially available.

[0027] Example 1: A processing technology for a glass fiber substrate cover plate for electronic devices, comprising the following steps:

[0028] Pre-preparation: Preparation of mercaptosilicone polymer: 24 parts of diethoxydimethylsilane, 19.5 parts of 3-mercaptopropyltrimethoxysilane, 11 parts of N-(3-trimethoxysilylpropyl)pyrrole, and 16.5 parts of hexamethyldisiloxane were sequentially added to 8 parts of deionized water, and 1.5 parts of acetic acid were added; the mixture was stirred at 70°C for 4 hours, washed, and dried to obtain mercaptosilicone polymer;

[0029] Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0030] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0031] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0032] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under an 8000W UV lamp for 6 seconds to form a texture layer;

[0033] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 2nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using SiH4 as the precursor, low-temperature chemical vapor deposition is performed at a temperature of 120℃, with a power of... The power was 80W, the gas pressure was 100Pa, and the gas ratio was SiH4:N2O = 1:10; the deposition thickness was 50nm; then a silicon oxynitride layer was deposited, and the deposition process was as follows: low-temperature chemical vapor deposition was performed using SiH4 as a precursor at a temperature of 120℃, a power of 150W, a gas pressure of 150Pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm; heat treatment was carried out at 150℃ for 30 minutes; a hardening liquid was sprayed on its surface, and it was cured at 100℃ for 2 hours; thus, an electronic device cover plate was obtained.

[0034] In the solution, the silica-containing water comprises the following components: by weight, 15 parts polyurethane acrylate, 6 parts epoxy acrylate, 14 parts acrylic monomer, 10 parts mercaptosilicone polymer, and 2.5 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.7:1.6; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 0.5:1.6.

[0035] Example 2: A processing technology for a glass fiber substrate cover plate for electronic devices, comprising the following steps:

[0036] Pre-preparation: Preparation of mercaptosilicone polymer: 24 parts of diethoxydimethylsilane, 19.5 parts of 3-mercaptopropyltrimethoxysilane, 11 parts of N-(3-trimethoxysilylpropyl)pyrrole, and 16.5 parts of hexamethyldisiloxane were sequentially added to 8 parts of deionized water, and 1.5 parts of acetic acid were added; the mixture was stirred at 70°C for 4 hours, washed, and dried to obtain mercaptosilicone polymer;

[0037] Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0038] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0039] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0040] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under a 10000W ultraviolet lamp for 5 seconds to form a texture layer;

[0041] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 3nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using SiH4 as the precursor, low-temperature chemical vapor deposition is performed at a temperature of 120℃, with a power of... The power was 80W, the gas pressure was 100Pa, and the gas ratio was SiH4:N2O = 1:10; the deposition thickness was 50nm; then a silicon oxynitride layer was deposited, and the deposition process was as follows: low-temperature chemical vapor deposition was performed using SiH4 as a precursor at a temperature of 120℃, a power of 150W, a gas pressure of 150Pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm; heat treatment was carried out at 150℃ for 30 minutes; a hardening liquid was sprayed on its surface, and it was cured at 100℃ for 2 hours; thus, an electronic device cover plate was obtained.

[0042] In the solution, the silica-containing water comprises the following components: by weight, 12 parts polyurethane acrylate, 7 parts epoxy acrylate, 16 parts acrylic monomer, 10 parts mercaptosilicone polymer, and 2 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.6:1.2; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 0.5:1.5.

[0043] Example 3: A processing technology for a glass fiber substrate cover plate for electronic devices, comprising the following steps:

[0044] Pre-preparation: Preparation of mercaptosilicone polymer: 24 parts of diethoxydimethylsilane, 19.5 parts of 3-mercaptopropyltrimethoxysilane, 11 parts of N-(3-trimethoxysilylpropyl)pyrrole, and 16.5 parts of hexamethyldisiloxane were sequentially added to 8 parts of deionized water, and 1.5 parts of acetic acid were added; the mixture was stirred at 70°C for 4 hours, washed, and dried to obtain mercaptosilicone polymer;

[0045] Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0046] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0047] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0048] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under an 8000W ultraviolet lamp for 10 seconds to form a texture layer;

[0049] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 2.5nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using SiH4 as the precursor, low-temperature chemical vapor deposition is performed at a temperature of 120℃, with a power of 100W, and a sputtering thickness of 100nm. The power was 80W, the gas pressure was 100Pa, and the gas ratio was SiH4:N2O = 1:10; the deposition thickness was 50nm; then a silicon oxynitride layer was deposited, the deposition process was as follows: low temperature chemical vapor deposition was performed using SiH4 as a precursor, the temperature was 120℃, the power was 150W, the gas pressure was 150Pa, and the gas ratio was SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm; heat treatment was carried out at 150℃ for 30 minutes; a hardening liquid was sprayed on its surface, and it was cured at 100℃ for 2 hours; thus, an electronic device cover plate was obtained.

[0050] In the solution, the silica-containing water comprises the following components: by weight, 17 parts polyurethane acrylate, 5 parts epoxy acrylate, 13 parts acrylic monomer, 12 parts mercaptosilicone polymer, and 3 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.8:2; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 0.5:1.8.

[0051] Comparative Example 1: The mercaptosilicone polymer in the silica gel water was adjusted to a dual-terminated vinyl polydimethylsiloxane (purchased from Zhejiang Rongli); the rest was the same as in Example 1.

[0052] Pre-preparation: Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0053] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0054] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0055] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under an 8000W UV lamp for 6 seconds to form a texture layer;

[0056] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 2nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using SiH4 as the precursor, low-temperature chemical vapor deposition is performed at a temperature of 120℃, with a power of... The power was 80W, the gas pressure was 100Pa, and the gas ratio was SiH4:N2O = 1:10; the deposition thickness was 50nm; then a silicon oxynitride layer was deposited, and the deposition process was as follows: low-temperature chemical vapor deposition was performed using SiH4 as a precursor at a temperature of 120℃, a power of 150W, a gas pressure of 150Pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm; heat treatment was carried out at 150℃ for 30 minutes; a hardening liquid was sprayed on its surface, and it was cured at 100℃ for 2 hours; thus, an electronic device cover plate was obtained.

[0057] In the solution, the silica-containing water comprises the following components by weight: 15 parts polyurethane acrylate, 6 parts epoxy acrylate, 14 parts acrylic monomer, 10 parts divinyl-terminated polydimethylsiloxane, and 2.5 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.7:1.6; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 0.5:1.6.

[0058] Comparative Example 2: The silicon dioxide layer was fabricated using a magnetron sputtering process; the rest was the same as in Example 1.

[0059] Pre-preparation: Preparation of mercaptosilicone polymer: 24 parts of diethoxydimethylsilane, 19.5 parts of 3-mercaptopropyltrimethoxysilane, 11 parts of N-(3-trimethoxysilylpropyl)pyrrole, and 16.5 parts of hexamethyldisiloxane were sequentially added to 8 parts of deionized water, and 1.5 parts of acetic acid were added; the mixture was stirred at 70°C for 4 hours, washed, and dried to obtain mercaptosilicone polymer;

[0060] Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0061] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0062] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0063] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under an 8000W UV lamp for 6 seconds to form a texture layer;

[0064] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 2nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using silicon dioxide as the sputtering target, the gas atmosphere is argon-5% oxygen, and the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. The base temperature was set at 50℃, the sputtering power was set at 150W, the gas pressure at 1Pa, and the sputtering thickness was 50nm. Next, a silicon oxynitride layer was deposited using the following process: low-temperature chemical vapor deposition was performed using SiH4 as a precursor at 120℃, power at 150W, gas pressure at 150pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm; heat treatment was performed at 150℃ for 30 minutes; a hardening solution was sprayed onto the surface, and curing was carried out at 100℃ for 2 hours; thus, an electronic device cover plate was obtained.

[0065] In the solution, the silica-containing water comprises the following components: by weight, 15 parts polyurethane acrylate, 6 parts epoxy acrylate, 14 parts acrylic monomer, 10 parts mercaptosilicone polymer, and 2.5 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.7:1.6; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 0.5:1.6.

[0066] Comparative Example 3: No heat treatment was performed after coating; the rest was the same as in Example 1.

[0067] Pre-preparation: Preparation of mercaptosilicone polymer: 24 parts of diethoxydimethylsilane, 19.5 parts of 3-mercaptopropyltrimethoxysilane, 11 parts of N-(3-trimethoxysilylpropyl)pyrrole, and 16.5 parts of hexamethyldisiloxane were sequentially added to 8 parts of deionized water, and 1.5 parts of acetic acid were added; the mixture was stirred at 70°C for 4 hours, washed, and dried to obtain mercaptosilicone polymer;

[0068] Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0069] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0070] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0071] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under an 8000W UV lamp for 6 seconds to form a texture layer;

[0072] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 2nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using SiH4 as the precursor, low-temperature chemical vapor deposition is performed at a temperature of... At 120℃, with a power of 80W and a gas pressure of 100pa, the gas ratio was SiH4:N2O = 1:10; the deposition thickness was 50nm. Next, a silicon oxynitride layer was deposited using SiH4 as a precursor at 120℃, with a power of 150W and a gas pressure of 150pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm. A hardening solution was then sprayed onto the surface, and the mixture was cured at 100℃ for 2 hours to obtain the electronic device cover plate.

[0073] In the solution, the silica-containing water comprises the following components: by weight, 15 parts polyurethane acrylate, 6 parts epoxy acrylate, 14 parts acrylic monomer, 10 parts mercaptosilicone polymer, and 2.5 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.7:1.6; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 0.5:1.6.

[0074] Comparative Example 4: The ratio of branched polysilane and silicone resin in the hardening solution was adjusted; the rest was the same as in Example 1.

[0075] Pre-preparation: Preparation of mercaptosilicone polymer: 24 parts of diethoxydimethylsilane, 19.5 parts of 3-mercaptopropyltrimethoxysilane, 11 parts of N-(3-trimethoxysilylpropyl)pyrrole, and 16.5 parts of hexamethyldisiloxane were sequentially added to 8 parts of deionized water, and 1.5 parts of acetic acid were added; the mixture was stirred at 70°C for 4 hours, washed, and dried to obtain mercaptosilicone polymer;

[0076] Preparation of branched polysiloxane: 10 parts of 3-aminopropyltriethoxysilane were added to 2 parts of 5% aqueous ethanol solution and mixed evenly. The mixture was stirred at 60°C for 4 hours and the solvent was removed by rotary evaporation to obtain branched polysiloxane.

[0077] Preparation of silicone resin: 2 parts of acetic acid were added to 10 parts of 5 wt% ethanol aqueous solution and mixed evenly. Then, 1.2 parts of hexamethyldisiloxane, 9.8 parts of 3-glycidyl etheroxypropyltriethoxysilane, and 5 parts of tetraethyl orthosilicate were added sequentially. The mixture was stirred at 70°C for 5 hours to obtain silicone resin.

[0078] Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate;

[0079] Step 2: Spray silicone-containing water onto the texture mold; roll the texture onto the surface of the fiberglass substrate using a roller, and irradiate it under an 8000W UV lamp for 6 seconds to form a texture layer;

[0080] Step 3: First, deposit a single-crystal silicon layer on the textured layer surface. The deposition process is as follows: using silicon as the sputtering target, vacuum magnetron sputtering is performed at a process temperature of 60℃, with a sputtering thickness of 2nm. Next, deposit a niobium oxide layer. The deposition process is as follows: using high-purity Nb as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100℃, the power is set to 100W, the gas pressure is 1Pa, and the sputtering thickness is 100nm. Then, deposit a silicon dioxide layer. The deposition process is as follows: using SiH4 as the precursor, low-temperature chemical vapor deposition is performed at a temperature of 120℃, with a power of... The power was 80W, the gas pressure was 100Pa, and the gas ratio was SiH4:N2O = 1:10; the deposition thickness was 50nm; then a silicon oxynitride layer was deposited, and the deposition process was as follows: low-temperature chemical vapor deposition was performed using SiH4 as a precursor at a temperature of 120℃, a power of 150W, a gas pressure of 150Pa, and a gas ratio of SiH4:NH3:N2O = 1:2:5; the deposition thickness was 100nm; heat treatment was carried out at 150℃ for 30 minutes; a hardening liquid was sprayed on its surface, and it was cured at 100℃ for 2 hours; thus, an electronic device cover plate was obtained.

[0081] In the solution, the silica-containing water comprises the following components by weight: 15 parts polyurethane acrylate, 6 parts epoxy acrylate, 14 parts acrylic monomer, 10 parts mercaptosilicone polymer, and 2.5 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:0.7:1.6; the curing liquid comprises branched polysilane and silicone resin in a mass ratio of 1:1.

[0082] Performance testing: The electronic device cover plates prepared in the examples and comparative examples were subjected to relevant performance tests: (1) The tensile strength of the samples was tested using a universal electronic testing machine at a speed of 2 mm / min; (2) The samples were placed in a water bath and boiled at 100°C for 6 hours; after drying and standing at room temperature for 2 hours, the adhesion was tested; (3) The pencil hardness was tested according to ASTM D3363. The obtained data are shown in the table below:

[0083] Example 1 439 4B 6H Comparative Example 1 382 3B 6H Comparative Example 2 399 3B 6H Comparative Example 3 418 3B 6H Comparative Example 4 402 2B 5H

[0084] Conclusion: The data in the table above shows that this application effectively improves the interfacial properties of the coating by using a silicone-containing water-based textured layer. Furthermore, the final sealing treatment with a curing solution effectively improves the tensile strength, interfacial properties, and wear resistance of the coating, thus enhancing the aesthetics and durability of the electronic device cover. In Comparative Example 1, the use of dual-terminated vinyl polydimethylsiloxane, compared to the use of mercaptosilicone polymers, resulted in decreased crosslinking density and interfacial interaction with the metal, leading to reduced strength and adhesion. In Comparative Example 2, the use of magnetron sputtering for the silica layer caused excessive internal stress and internal cracks, resulting in decreased performance. In Comparative Example 3, the lack of post-coating heat treatment resulted in internal stress, which, combined with the curing stress of the curing solution, led to decreased performance. In Comparative Example 4, the adjustment of the proportions of substances in the curing solution resulted in decreased coating performance.

[0085] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A processing technology for a glass fiber substrate cover plate for electronic devices, characterized in that: Includes the following steps: Step 1: Cut the epoxy fiberglass board to obtain the fiberglass substrate; Step 2: Spray silicone-containing liquid onto the texture mold; press the texture onto the surface of the fiberglass substrate using a roller, and cure; forming a texture layer; Step 3: Sequentially deposit a single-crystal silicon layer, a niobium oxide layer, a silicon dioxide layer, and a silicon oxynitride layer on the surface of the textured layer; heat-treat at 150~160℃ for 10~30 minutes; spray a hardening liquid onto the surface and cure; obtain the electronic device cover plate; The silica-containing water comprises the following components: by weight, 12-17 parts polyurethane acrylate, 5-7 parts epoxy acrylate, 13-16 parts acrylic monomer, 10-12 parts mercaptosilicone polymer, and 2-3 parts photoinitiator; the photoinitiator comprises 4-methoxyphenol, photoinitiator BP, and photoinitiator TPO in a mass ratio of 0.2:(0.6-0.8):(1.2-2). The preparation method of the mercaptosilicone polymer is as follows: Diethoxydimethylsilane, 3-mercaptopropyltrimethoxysilane, N-(3-trimethoxysilylpropyl)pyrrole, and hexamethyldisiloxane are added sequentially to deionized water, and acetic acid is added; the mixture is stirred evenly and reacted at 70~75℃ for 4~5 hours, and then washed and dried to obtain the mercaptosilicone polymer; The preparation method of the curing liquid is as follows: (1) 3-aminopropyltriethoxysilane is added to an ethanol aqueous solution and mixed evenly. The mixture is stirred at 60~65℃ for 4~4.5 hours and the solvent is removed by rotary evaporation to obtain branched polysiloxane; (2) Acetic acid is added to an ethanol aqueous solution and mixed evenly. Hexamethyldisiloxane, 3-glycidyl etheroxypropyltriethoxysilane and tetraethyl orthosilicate are added in sequence at a mass ratio of (1~1.5):(9.5~10):(5~5.5); the mixture is stirred at 70~75℃ for 5~6 hours to obtain silicone resin; (3) Branched polysilane and silicone resin are mixed evenly at a mass ratio of 0.5:(1.5~1.8) to obtain curing liquid.

2. The processing technology of a glass fiber substrate cover plate for electronic devices according to claim 1, characterized in that: The deposition process of the single crystal silicon layer is as follows: using silicon as the sputtering target, vacuum magnetron sputtering, the process temperature is 50~80℃, and the sputtering thickness is 2~3nm. The niobium oxide layer is deposited using the following process: high-purity Nb is used as the magnetron sputtering target, the gas atmosphere is argon-10% oxygen, the substrate temperature is 100~120℃, the power is set to 100~150W, the gas pressure is 0.5~2Pa, and the sputtering thickness is 50~100nm.

3. The processing technology of a glass fiber substrate cover plate for electronic devices according to claim 1, characterized in that: The deposition process of the silicon dioxide layer is as follows: low-temperature chemical vapor deposition is performed using SiH4 as a precursor at a temperature of 80~150℃, a power of 50~100W, a gas pressure of 50~150pa, and a gas ratio of SiH4:N2O=1:10; the deposition thickness is 50~100nm.

4. The processing technology of a glass fiber substrate cover plate for electronic devices according to claim 1, characterized in that: The deposition process of the silicon oxynitride layer is as follows: low-temperature chemical vapor deposition is performed using SiH4 as a precursor at a temperature of 100~150℃, a power of 100~150W, a gas pressure of 100~200pa, and a gas ratio of SiH4:NH3:N2O=1:2:5; the deposition thickness is 50~100nm.

5. The processing technology of a glass fiber substrate cover plate for electronic devices according to claim 1, characterized in that: The mercaptosilicone polymer comprises the following components by weight: 23-25 ​​parts diethoxydimethylsilane, 18-20 parts 3-mercaptopropyltrimethoxysilane, 10-12 parts N-(3-trimethoxysilylpropyl)pyrrole, 16-18 parts hexamethyldisiloxane, 8-10 parts deionized water, and 1-3 parts acetic acid.

6. The processing technology of a glass fiber substrate cover plate for electronic devices according to claim 1, characterized in that: In step 2, the curing of the silica gel solution is: irradiation under an 8000~10000W UV lamp for 5~10 seconds; in step 3, the curing of the hardening liquid is: curing at 100~110℃ for 1~2 hours.

7. The electronic device cover plate prepared by the processing technology of the glass fiber substrate electronic device cover plate according to claim 1.