一种基于自旋转移矩磁性随机存储器的无参考单端读电路
By designing a referenceless single-ended read circuit and using bit line voltage division to generate current signals for data reading, the problems of complexity and high power consumption of traditional STT-MRAM read circuits are solved, achieving low-power, high-speed and high-integration data reading.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SOUTHEAST UNIV
- Filing Date
- 2025-04-30
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional STT-MRAM dual-ended read circuits require reference signals or complex circuit structures, which increases circuit complexity and power consumption, making it difficult to meet the requirements of high integration and high-speed read/write.
Design a referenceless single-ended read circuit based on a spin-torque magnetic random access memory, including a bit line voltage divider generation circuit, a voltage-current sensing circuit, and a current-voltage latch circuit. Data is read by generating a current signal through bit line voltage divider, reducing the dependence on reference cells.
It achieves low-power, high-speed, and highly integrated data reading, reduces circuit complexity, and improves reading speed and data stability.
Smart Images
Figure CN120431978B_ABST