Thermally conductive and insulating structures and preparation methods, electronic devices

Abstract

This application provides a thermally conductive and insulating structure and its fabrication method, as well as an electronic device, relating to the field of electronic device technology. The electronic device includes a housing, a heating element, and a thermally conductive and insulating structure. The housing includes a back cover and a middle frame, with the heating element disposed within the middle frame. The thermally conductive and insulating structure includes an insulating substrate, comprising a first layer and a second layer, stacked on top of each other, with the second layer doped with a thermally conductive material. Furthermore, the thermally conductive and insulating structure is disposed on the inner surface of the back cover, and the first layer is adhered to the back cover. The thermally conductive and insulating structure overlaps at least partially with the vertical projection of the heating element onto the back cover. This application addresses the problem of the heating element transferring heat to the back cover of the electronic device, resulting in localized hot spots in the area opposite the heating element, affecting user experience and the performance of the electronic device.

Description

Technical Field

[0001] This application relates to the field of electronic device technology, and in particular to a thermally conductive and insulating structure and its preparation method, and electronic devices. Background Technology

[0002] With the development and popularization of electronic devices, the use of mobile phones, tablets, and other terminal devices is becoming increasingly widespread. During the use of these devices, the temperature rise of heat-generating components is unavoidable. However, this heat transfers to the back cover of the electronic device, causing localized hot spots in the area where the back cover and the heat-generating component are located, affecting the user experience and the performance of the electronic device. Summary of the Invention

[0003] In view of this, this application provides a thermally conductive and heat-insulating structure and preparation method, as well as an electronic device. This thermally conductive and heat-insulating structure and preparation method, as well as the electronic device, are used to solve the problem that the heat generated by the heat-generating device is transferred to the back cover of the electronic device, resulting in local hot spots in the area of ​​the back cover of the electronic device opposite to the heat-generating device, which affects the user experience and the performance of the electronic device.

[0004] To achieve the above objectives, this application adopts the following technical solution:

[0005] In a first aspect, this application provides a thermally conductive and heat-insulating structure, including a heat-insulating substrate, the heat-insulating substrate including a first stack and a second stack, the first stack and the second stack being stacked, and the second stack being doped with a thermally conductive material.

[0006] In this way, since no thermally conductive material is incorporated into the first layer, meaning the first layer only provides thermal insulation, the heat generated by the heating device is conducted through the second layer while preventing heat transfer to the back cover via the first layer. This helps reduce heat in the back cover, thus mitigating the problem of localized hot spots and improving the user experience.

[0007] In some possible implementations of the first aspect of this application, the heat-insulating substrate includes siloxane, solvent, and catalyst.

[0008] In this way, in order for the siloxane to react in the solvent and catalyst during the formation of the insulating substrate and to obtain silicon dioxide, the solvent and catalyst work together to delay the time for the siloxane to form silicon dioxide, so that the siloxane can react completely into silicon dioxide.

[0009] In some possible implementations of the first aspect of this application, the siloxane is at least one of tetraethyl orthosilicate, methyl orthosilicate, methyltrimethoxysilane, and trimethoxysilane.

[0010] In this way, the composition of the heat insulation substrate can contain one type of siloxane or multiple types of siloxanes. As the variety of siloxanes in the composition of the heat insulation substrate 71 increases, the amount of solvent and catalyst added also needs to be increased proportionally to ensure the stability of the content of siloxanes, solvents, and catalysts in the heat insulation substrate, thereby ensuring the structural strength of the heat insulation substrate.

[0011] In some possible implementations of the first aspect of this application, the solvent is water and ethanol, and / or water and ethylene glycol.

[0012] In this way, water can be used to react with siloxanes to produce silicon dioxide. Ethanol or ethylene glycol can dilute the siloxanes during the formation of the insulating substrate.

[0013] In some possible implementations of the first aspect of this application, the catalyst is acetic acid and hydrochloric acid. This allows the catalyst to provide an acidic environment for the reaction of the siloxane with water during the formation of the insulating substrate.

[0014] In some possible implementations of the first aspect of this application, the thermally conductive material is at least one of thermally conductive carbon fiber, thermally conductive graphene fiber, silicon nitride fiber, alumina powder, and graphite powder.

[0015] In this way, based on the thermal conductivity of the thermally conductive material, doping the second stack with a thermally conductive material is beneficial to improving the thermal conductivity of the second stack, thereby ensuring the thermal conductivity performance of the second stack.

[0016] In some possible implementations of the first aspect of this application, the thermal conductivity of the second stack is greater than 0.005 W / (mK).

[0017] In this way, since thermal conductivity is positively correlated with thermal conductivity performance, the higher the thermal conductivity, the better the thermal conductivity performance, the thermal conductivity of the second layer is greater than 0.005 W / (mK), which ensures that the thermal conductivity of the second layer is greater than that of the thermal insulation substrate, thus which is conducive to giving full play to the thermal conductivity performance of the second layer.

[0018] In some possible implementations of the first aspect of this application, the density of the thermally conductive material is less than or equal to 1 g / cm³. 3 .

[0019] In this way, based on the density formula (mass = density x volume), with the volume remaining constant, density and mass are positively correlated. The lower the density of the thermally conductive material, the lighter its mass, which helps to reduce the overall mass of the thermally conductive and insulating structure, thus contributing to the lightweighting of electronic devices.

[0020] Secondly, this application provides an electronic device including a housing, a heating element, and a thermally conductive and insulating structure. The housing includes a back cover and a middle frame, the heating element is disposed within the middle frame, the thermally conductive and insulating structure is disposed on the inner surface of the back cover, and a first layer is attached to the back cover, with the thermally conductive and insulating structure at least partially overlapping the vertical projection of the heating element on the back cover.

[0021] In this way, because the thermally conductive material has thermal conductivity, the second layer also becomes thermally conductive. Furthermore, since the vertical projection of the thermally conductive insulation structure onto the back cover at least partially overlaps with the vertical projection of the heating element onto the back cover, heat from the heating element can be transferred to the area of ​​the second layer of the thermally conductive insulation structure opposite the heating element. The second layer can then transfer heat to other areas, thereby reducing the amount of heat accumulated on the heating element and mitigating the risk of performance degradation or even damage due to excessively high temperatures.

[0022] In some possible implementations of the second aspect of this application, the second stack is bonded to the heating device.

[0023] In this way, by bonding the second layer with the heat-generating device, the heat exchange efficiency between the heat-generating device and the second layer can be improved, which helps to reduce the risk of performance degradation or even damage to the heat-generating device due to heat generation.

[0024] In some possible implementations of the second aspect of this application, multiple heating devices are provided, multiple thermally conductive and heat-insulating structures are provided, and the second layer of the thermally conductive and heat-insulating structure is attached to at least one heating device.

[0025] This ensures that each heat-generating component can be covered by the thermally conductive and insulating structure, thus increasing the coverage area of ​​the thermally conductive and insulating structure for the heat-generating components.

[0026] In some possible implementations of the second aspect of this application, the number of heating devices and thermally conductive and insulating structures are equal, and they are in one-to-one contact.

[0027] This ensures that the thermally conductive and insulating structure specifically covers each heat-generating component, allowing each component to be thermally conducted by a dedicated thermally conductive and insulating structure, thus improving the thermal conductivity of the structure within the electronic device. Furthermore, the more thermally conductive and insulating structures on the inner surface of the back cover, the faster the heat dissipates from the heat-generating components within the electronic device, thereby improving its performance.

[0028] In some possible implementations of the second aspect of this application, the vertical projection of the thermally conductive and insulating structure on the back cover covers the vertical projection of the heating element on the back cover.

[0029] This ensures that the thermally conductive and insulating structure completely covers the heating element, allowing different positions on the surface of the heating element facing the back cover to contact the second layer. This increases the contact area between the heating element and the second layer, which is beneficial for further improving heat exchange between the two.

[0030] In some possible implementations of the second aspect of this application, the heat-generating device includes a motherboard bracket, a shielding cover, and a board-to-board connector bracket. In this way, the thermally conductive and insulating structure can specifically conduct heat to the heat-generating device.

[0031] Thirdly, this application provides a method for preparing a thermally conductive and insulating structure, which includes the following steps: mixing hydrochloric acid, acetic acid, and water to form a first solution; mixing siloxane and ethanol to form a second solution; mixing the first and second solutions to form a sol; adding a thermally conductive material to the sol to form a sol with a layered structure; performing a gel reaction on the sol with the layered structure to form a soft thermally conductive and insulating structure; and drying the soft thermally conductive and insulating structure to form a thermally conductive and insulating structure.

[0032] In this way, by using the method of preparing the thermally conductive and heat-insulating structure, a first layer of thermally conductive and heat-insulating structure and a second layer of thermally conductive material are formed. This ensures the heat insulation effect of the first layer on the back cover, while also ensuring the heat conduction performance of the second layer for the heat-generating device, effectively solving the problem of local hot spots generated on the back cover of electronic devices.

[0033] In some possible implementations of the third aspect of this application, after adding a thermally conductive material to the sol, the preparation method includes: placing the sol with the added thermally conductive material into a centrifuge tube, centrifuging and stirring it, and then allowing it to stand. The sol with the added thermally conductive material is repeatedly subjected to centrifugation and standing operations multiple times to form a sol with a layered structure.

[0034] In this way, by repeatedly centrifuging and allowing the sol containing the thermally conductive material to stand, it is possible to ensure that the thermally conductive material is evenly distributed in the lower region of the sol, thereby achieving the purpose of stratifying the sol. The centrifugation and standing method saves time for the sol to form stratification.

[0035] Layering refers to the fact that the upper region of the sol contains thermally conductive material, while the lower region does not, thus dividing the sol into two regions.

[0036] In some possible implementations of the third aspect of this application, the centrifugal stirring rate is 800 r / min to 1200 r / min, and the settling time is 10 min to 30 min.

[0037] Then, centrifuge at a rate of 800 r / min to 1200 r / min and let stand for 10 min to 30 min. Centrifugation is used to make the thermally conductive material more evenly distributed in the lower region of the sol. However, during centrifugation, some thermally conductive material will be stirred to the upper region of the sol. Therefore, letting stand allows the evenly stirred thermally conductive material to completely settle in the lower region of the sol.

[0038] In some possible implementations of the third aspect of this application, after adding a thermally conductive material to the sol, the preparation method includes: placing the sol with the added thermally conductive material into a container and letting it stand at room temperature for 1 to 12 hours to form a sol with a layered structure.

[0039] In this way, by allowing the sol containing thermally conductive material to stand, the thermally conductive material is evenly distributed in the lower region of the sol, thereby achieving the purpose of stratifying the sol. The standing method simplifies the operation process of sol stratification.

[0040] In some possible implementations of the third aspect of this application, the mixing ratio of hydrochloric acid, acetic acid, and water is 0.001:0.019:1.

[0041] In this way, by mixing hydrochloric acid, acetic acid, and water in a ratio of 0.001:0.019:1, an acidic environment is provided for the preparation of the thermally conductive and insulating structure.

[0042] In some possible implementations of the third aspect of this application, the mixing and stirring rate of hydrochloric acid, acetic acid and water is 100 r / min to 500 r / min.

[0043] In this way, by stirring at a constant speed of 100r / min to 500r / min, hydrochloric acid, acetic acid and water can be fully mixed, making the density of the first solution more uniform, thereby ensuring the consistency of the acidic environment within the first solution.

[0044] In some possible implementations of the third aspect of this application, the mixing ratio of siloxane to ethanol is 1:10.

[0045] In this way, ethanol can dilute the siloxane. By mixing the two in a 1:10 ratio, the ethanol can fully dilute the siloxane.

[0046] In some possible implementations of the third aspect of this application, the mixing and stirring rate of siloxane and ethanol is 100 r / min to 500 r / min.

[0047] In this way, stirring at 100r / min to 500r / min can ensure that the siloxane and ethanol are fully mixed, making the density of the second solution more uniform.

[0048] In some possible implementations of the third aspect of this application, the mixing and stirring rate of the first solution and the second solution is 400 r / min to 800 r / min.

[0049] In this way, stirring at a rate of 400–800 r / min can promote full contact between the first and second solutions, improve the efficiency of the hydrolysis-condensation reaction, make the hydrolysis-condensation reaction of the first and second solutions more complete, and thus make the pore structure distribution in the sol more uniform.

[0050] In some possible implementations of the third aspect of this application, the ambient temperature for the gelation reaction is 50°C to 70°C.

[0051] In this way, an environment of 50℃~70℃ can accelerate the gelation reaction and solidify the sol with a layered structure.

[0052] In some possible implementations of the third aspect of this application, after the sol with a layered structure undergoes a gelation reaction, the preparation method includes: aging the sol with the layered structure to form a soft, thermally conductive, and insulating structure; and adding ethanol into the soft, thermally conductive, and insulating structure to carry out a displacement reaction.

[0053] In this way, aging is performed to make the gelation reaction of the layered gel more complete. The displacement reaction is performed to displace ethanol from impurities such as solvents (e.g., water) and catalysts (e.g., acetic acid or hydrochloric acid) remaining in the porous structure.

[0054] In some possible implementations of the third aspect of this application, the aging time is 8h to 12h. The soft thermally conductive insulation structure undergoes multiple replacement reactions, with each replacement lasting 8h to 12h.

[0055] In this way, aging for 8 to 12 hours allows the gelation reaction of the layered gel to be more complete, enabling the siloxane to completely react into silicon dioxide, thus making the pore structure distribution within the soft thermally conductive and insulating structure more uniform. The displacement reaction takes 8 to 12 hours to ensure that ethanol can completely displace any remaining solvents (e.g., water) and catalysts (e.g., acetic acid or hydrochloric acid) and other impurities within the pore structure.

[0056] In some possible implementations of the third aspect of this application, the method for drying the flexible thermally conductive insulation structure includes: adding the flexible thermally conductive insulation structure into a drying device; adding a drying medium into the drying device and pressurizing it to obtain the thermally conductive insulation structure.

[0057] In this way, the drying process replaces the ethanol in the pore structure of the soft thermally conductive insulation structure with a drying medium (such as carbon dioxide), and then removes the drying medium from the pore structure, thereby maintaining the integrity of the overall framework and pore structure of the thermally conductive insulation structure.

[0058] In some possible implementations of the third aspect of this application, the critical pressure applied by the drying device is 8.5 MPa to 9.5 MPa.

[0059] In this way, the critical pressure range within the drying device is controlled between 8.5 MPa and 9.5 MPa. This is to ensure that the critical point of ethanol replacement during the drying process is matched, so that the drying medium and ethanol can be completely replaced. Attached Figure Description

[0060] Figure 1 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application;

[0061] Figure 2 An exploded view of the electronic device provided in the embodiments of this application;

[0062] Figure 3 This is a schematic diagram of the temperature test of the back cover of the first electronic device;

[0063] Figure 4 This is a schematic diagram of the temperature test for the back cover of the second type of electronic device;

[0064] Figure 5 A schematic diagram of the thermal insulation structure provided in the embodiments of this application;

[0065] Figure 6 for Figure 5 A schematic cross-sectional view of the thermal insulation structure installed inside an electronic device;

[0066] Figure 7 This is a schematic diagram of the thermally conductive and insulating structure provided in the embodiments of this application;

[0067] Figure 8 To be Figure 7 The diagram shows a thermally conductive and insulating structure installed inside an electronic device.

[0068] Figure 9 According to Figure 3 The diagram shown illustrates the thermally conductive and insulating structure installed on the rear cover.

[0069] Figure 10 According to Figure 4 The diagram shown illustrates the thermally conductive and insulating structure installed on the rear cover.

[0070] Figure 11 A phase diagram showing the addition of thermally conductive materials to a sol;

[0071] Figure 12 This is a schematic diagram showing the state of the thermally conductive material after precipitation.

[0072] Figure 13This is a schematic diagram of the state of the thermally conductive material after it has been suspended.

[0073] Figure label:

[0074] 100 - Electronic devices;

[0075] 1-Display module; 11-Light-transmitting cover; 12-Display screen;

[0076] 2-Shell; 21-Back cover; 22-Middle frame; 221-Side frame; 222-Middle plate;

[0077] 3-Circuit board;

[0078] 4-Camera module;

[0079] 5-BTB connector;

[0080] 6-Insulation structure;

[0081] 7- Thermally conductive and insulating structure; 71- Insulating substrate; 711- First layer; 712- Second layer; 72- Thermally conductive material;

[0082] 8-Heat-generating components; 81-BTB connector bracket; 82-Main board bracket; 83-Shielding cover;

[0083] Q-sol. Detailed Implementation

[0084] In the embodiments of this application, the terms "exemplarily" or "for example" are used to indicate examples, illustrations, or explanations. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplarily" or "for example" is intended to present the relevant concepts in a specific manner.

[0085] In the description of the embodiments of this application, the term "and / or" refers to and covers any and all possible combinations of one or more of the associated listed items. The term "and / or" describes an association relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this application generally indicates that the preceding and following related objects have an "or" relationship.

[0086] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the terms "installation", "connection" and "linking" should be interpreted broadly. For example, "linking" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0087] In the description of embodiments of this application, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0088] This application provides an electronic device. Specifically, the electronic device can be a portable electronic device or other types of electronic devices. For example, the electronic device can be a mobile phone, tablet personal computer, laptop computer, personal digital assistant (PDA), monitor, camera, personal computer, laptop computer, wearable device, etc. For ease of explanation, the following description uses a mobile phone as an example.

[0089] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of the electronic device 100 provided in the embodiments of this application. Figure 2 This is an exploded view of the electronic device 100 provided in an embodiment of this application. As can be seen from the above, in the embodiments of this application, the electronic device 100 is a mobile phone, and the electronic device 100 can have an approximately rectangular plate-like structure. The electronic device 100 may include a display module 1, a housing 2, a circuit board 3, and electronic components.

[0090] For ease of description in the following embodiments, a coordinate system is established for the electronic device 100. Specifically, the thickness direction of the electronic device 100 (i.e., the stacking direction of the display screen 12 and the light-transmitting cover 11) is defined as the Z-axis direction (i.e., the second direction), and the directions perpendicular to the Z-axis are the Y-axis direction (i.e., the first direction) and the X-axis direction (i.e., the third direction), respectively, with the Y-axis direction and the X-axis direction being perpendicular. Specifically, in this embodiment, the electronic device 100 has an approximately rectangular plate-like structure, wherein the length direction of the electronic device 100 is the Y-axis direction, and the width direction of the electronic device 100 is the X-axis direction. It is understood that the coordinate system setting of the electronic device 100 can be flexibly set according to actual needs, and is not specifically limited here.

[0091] The aforementioned display module 1 is used to display images, videos, etc. The display module 1 may include a light-transmitting cover 11 and a display screen 12 (also known as a display panel), with the light-transmitting cover 11 and the display screen 12 stacked together. The material of the light-transmitting cover 11 includes, but is not limited to, glass. For example, the light-transmitting cover 11 can be a common light-transmitting cover 11, used to protect the display screen 12 from damage caused by external forces and to provide dust protection. Alternatively, the light-transmitting cover 11 can also be a touch-enabled light-transmitting cover 11, enabling the electronic device 100 to have touch functionality, thus making it more convenient for users. Therefore, this application does not specifically limit the material of the light-transmitting cover 11.

[0092] Furthermore, the aforementioned display screen 12 can be a flexible display screen or a rigid display screen. For example, the display screen 12 can be an organic light-emitting diode (OLED) display screen, an active-matrix organic light-emitting diode (AMOLED) display screen, a mini light-emitting diode display screen, a micro light-emitting diode display screen, a micro organic light-emitting diode display screen, a quantum dot light-emitting diode (QLED) display screen, or a liquid crystal display (LCD).

[0093] The aforementioned housing 2 is used to protect the electronic components inside the electronic device 100. The housing 2 may include a rear cover 21 and a mid-frame 22. The rear cover 21 is flat and is located on the side of the display screen 12 away from the light-transmitting cover 11, and is stacked with the light-transmitting cover 11 and the display screen 12. The shape of the rear cover 21 is adapted to the shape of the light-transmitting cover 11. For example, the shape of the rear cover 21 includes, but is not limited to, a rectangular flat plate, an oblong flat plate, a circular flat plate, or an elliptical flat plate. Furthermore, the material of the rear cover 21 includes, but is not limited to, glass, plastic, metal, and ceramic.

[0094] The middle frame 22 includes a bezel 221 and a middle plate 222. The bezel 221 has a ring-shaped frame structure and is arranged around the light-transmitting cover plate 11. The connection between the bezel 221 and the display module 1 includes, but is not limited to, adhesive bonding or snap-fitting. The middle plate 222 is flat and its shape is adapted to the shape of the light-transmitting cover plate 11. The middle plate 222 is located on the side of the display screen 12 away from the light-transmitting cover plate 11.

[0095] The middle plate 222 is disposed within the frame 221. Exemplarily, the middle plate 222 and the frame 221 can be a single integral structure. This improves the structural strength of the housing 2, simplifies the manufacturing process of the housing 2, and reduces its production cost. Of course, this application is not limited to this; in other examples, the frame 221 and the middle plate 222 can also be assembled, and the connection methods between the frame 221 and the middle plate 222 include, but are not limited to, adhesive bonding, snap-fitting, screw connection, and welding, etc.

[0096] The circuit board 3 is used to install different electronic components of the electronic device 100 to achieve different functions of the electronic device 100. The circuit board 3 is fixed to the side of the middle plate 222 facing the rear cover 21, and the circuit board 3 is disposed opposite to the rear cover 21. For example, the circuit board 3 can be fixed to the surface of the middle plate 222 facing the rear cover 21 by means of threaded connection, snap-fit, adhesive or welding.

[0097] The electronic components set on the circuit board 3 may include a camera module 4, a flash module, a control chip (e.g., a system-on-chip, SOC), a graphics processing unit (GPU), universal flash storage (UFS), and capacitors, resistors, inductors, etc.

[0098] Furthermore, some of the electronic devices disposed on the circuit board 3 generate heat during operation (hereinafter referred to as heat-generating device 8). Since the heat-generating device 8 is close to the back cover 21, the heat generated by the heat-generating device 8 is transferred to the back cover 21, resulting in a higher local temperature on the back cover 21, thereby generating local hot spots on the back cover 21.

[0099] For example, please see Figure 3 and Figure 4 , Figure 3 This is a schematic diagram of the temperature test of the back cover 21 of the first electronic device 100. Figure 4 This is a schematic diagram of the temperature test of the back cover 21 of the second electronic device 100. Since the normal human body temperature is 35℃~37℃, objects exceeding 37℃ can be clearly perceived by the human body. In other words, when the temperature of the back cover 21 of the electronic device 100 is below 37℃, the user will have a good user experience when touching the back cover 21 of the electronic device; that is, the user will not feel the electronic device getting noticeably hot.

[0100] However, from Figure 3 and Figure 4It was found that the temperature on the back cover 21 could reach 37℃, 38℃, 38.5℃, 39℃, 39.5℃, 40℃, 40.5℃, 41℃ or 42℃, etc. Therefore, when users touch these areas, they will feel obvious heat, which will affect the user experience.

[0101] Furthermore, excessively high temperatures in the heat-generating device 8 can also reduce the performance of electronic devices, such as causing the electronic device 100 to run slowly, lag, or even crash.

[0102] Therefore, please refer to Figure 5 and Figure 6 , Figure 5 A schematic diagram of the heat insulation structure 6 provided in an embodiment of this application; Figure 6 for Figure 5 The diagram shows a cross-sectional view of the heat insulation structure 6 installed within the electronic device 100. The electronic device may also include the heat insulation structure 6.

[0103] The heat insulation structure 6 is connected to the inner surface of the rear cover 21 on one side in the Z-axis direction. The inner surface of the rear cover 21 refers to the surface of the rear cover 21 facing the middle plate 222. The other side of the heat insulation structure 6 is attached to the heating device 8. The heat insulation structure 6 has the characteristic of blocking heat. By placing the heat insulation structure 6 between the rear cover 21 and the heating device 8, it is beneficial for the heat insulation structure 6 to block the heat generated by the heating device 8 from being transferred to the rear cover 21, thereby reducing the risk of local hot spots appearing on the rear cover 21.

[0104] Although the aforementioned heat insulation structure 6 is located between the heating element 8 and the back cover 21 and can serve as a heat insulation function, it also causes heat generated by the heating element 8 to accumulate. The continuous accumulation of heat in the heating element 8 may lead to a decrease in the performance of electronic devices or even damage.

[0105] To address the aforementioned problems, embodiments of this application provide a thermally conductive and insulating structure 7. Please refer to [link / reference]. Figure 7 and Figure 8 , Figure 7 This is a schematic diagram of the thermally conductive and insulating structure 7 provided in an embodiment of this application. Figure 8 To be Figure 7 The diagram shows a thermally conductive and insulating structure 7 installed inside an electronic device 100. The thermally conductive and insulating structure 7 is disposed on the inner surface of the back cover 21, and the thermally conductive and insulating structure 7 overlaps at least partially with the vertical projection of the heat-generating device 8 on the back cover 21.

[0106] The thermally conductive and insulating structure 7 includes an insulating substrate 71, which comprises a first layer 711 and a second layer 712. The second layer 712 is doped with a thermally conductive material 72. The first layer 711 and the second layer 712 are stacked, with the first layer 711 adhering to the inner surface of the rear cover 21, and the second layer 712 facing the middle plate 222. Figure 7 The dashed line in the middle indicates the boundary between the first stack 711 and the second stack 712.

[0107] In this way, because the thermally conductive material 72 has thermal conductivity, the second stack 712 also has thermal conductivity. Furthermore, since the vertical projection of the thermally conductive and insulating structure 7 and the insulating structure 6 onto the back cover 21 at least partially overlaps with the vertical projection of the heating device 8 onto the back cover 21, heat from the heating device 8 can be transferred to the area on the second stack 712 of the thermally conductive and insulating structure 7 opposite to the heating device 8. Through the second stack 712, heat can be transferred to other areas, thereby reducing the heat accumulation on the heating device 8 and lowering the risk of performance degradation or even damage to the heating device 8 due to excessive temperature.

[0108] Furthermore, since the first stack 711 does not contain thermally conductive material 72, it only has thermal insulation properties. Therefore, while the heat generated by the heating device 8 is conducted through the second stack 712, the heat cannot be conducted to the rear cover 21 through the first stack 711. This helps to reduce the heat in the rear cover 21, thus optimizing the problem of local hot spots on the rear cover 21 and improving the user experience.

[0109] For example, the aforementioned heat-generating device 8 may be a BTB connector bracket 81, a motherboard bracket 82, and a shielding cover 83, etc.

[0110] For example, please continue reading Figure 7 and Figure 8 , Figure 2 The camera module 4 shown can be electrically connected to the circuit board 3 via a BTB connector 5. To prevent the BTB connector 5 from becoming loose within the electronic device 100, a BTB connector bracket 81 is provided on the side of the BTB connector 5 facing the rear cover 21. The BTB connector bracket 81 is fixedly connected to the side of the BTB connector 5 facing the rear cover 21 in the Z-axis direction. One sidewall of the BTB connector bracket 81 is fixedly connected to the frame 221, thereby limiting the position of the BTB connector 5. The fixing methods between the BTB connector bracket 81 and the frame 221 include, but are not limited to, adhesive bonding, snap-fitting, threaded connection, or bolt connection. Furthermore, the connection methods between the BTB connector bracket 81 and the BTB connector 5 include, but are not limited to, adhesive bonding, snap-fitting, threaded connection, or bolt connection.

[0111] During the operation of the camera module 4, the temperature of the BTB connector 5 will rise, and the heat will be transferred to the BTB connector bracket 81, which will cause the BTB connector bracket 81 to heat up.

[0112] During the installation and maintenance of circuit board 3, to prevent some electronic components on circuit board 3 from being damaged by external forces, a motherboard bracket 82 is provided on the side of circuit board 3 facing the rear cover 21. The motherboard bracket 82 is fixedly mounted on circuit board 3, and the electronic components are covered inside the motherboard bracket 82, thereby achieving the purpose of protecting the electronic components.

[0113] Since the motherboard bracket 82 is mounted on the circuit board 3, and some heat-generating components 8 are mounted inside the motherboard bracket 82, the temperature of the heat-generating components 8 rises during the use of the electronic device 100, and the heat is transferred to the motherboard bracket 82, which in turn causes the motherboard bracket 82 to heat up.

[0114] Alternatively, given the increasingly widespread application of electromagnetic waves in daily life and technology, but the fact that electromagnetically sensitive electronic devices on circuit board 3 (such as radio frequency chips, Bluetooth chips, Wi-Fi chips, etc.) are easily interfered with by electromagnetic waves in the surrounding environment during signal transmission, affecting the normal operation of the electronic devices, a shielding cover 83 is also provided on circuit board 3. The shielding cover 83 is located on the side of circuit board 3 facing the rear cover 21 and is fixedly mounted on the electromagnetically sensitive electronic devices. The shielding cover 83 can effectively isolate interference signals, thereby further improving the performance of the entire circuit system in electronic device 100 and ensuring the performance of electronic device 100.

[0115] During the use of electronic device 100, the temperature of some electronic components sensitive to electromagnetic waves rises, and the heat is transferred to the shielding cover 83, which in turn causes the shielding cover 83 to heat up.

[0116] It is understandable that the heating device 8 is not limited to the above examples, and can also be a resistor, capacitor, and controller, etc.

[0117] In some embodiments, the second stack 712 may be bonded to the heating device 8. In this way, the bonding between the second stack 712 and the heating device 8 can improve the heat exchange efficiency between the heating device 8 and the second stack 712, which helps to reduce the risk of performance degradation or even damage to the heating device 8 due to heat generation.

[0118] Furthermore, the vertical projection of the thermally conductive and insulating structure 7 onto the rear cover 21 can cover the vertical projection of the heating element 8 onto the rear cover 21. In this way, the thermally conductive and insulating structure 7 can completely cover the heating element 8, so that different positions of the heating element 8 on the surface facing the rear cover 21 can contact the second stack 712, thereby increasing the contact area between the heating element 8 and the second stack 712, which is beneficial to further improve the heat exchange between the two.

[0119] Furthermore, in certain areas within the aforementioned housing 2, due to the greater distance from the heating element 8, the temperature in these areas is relatively low; these areas can be referred to as cold zones. Figure 8 The R region indicates the area where the heating element 8 is located, and the L region indicates the cold zone. The area not covered by the aforementioned thermally conductive and insulating structure 7 can extend to this cold zone, thereby conducting the heat generated by the heating element 8 to the cold zone, which helps to improve the temperature uniformity inside the housing 2.

[0120] It should be noted that, since the human body's perception of temperatures below 37°C is not very strong, the aforementioned cold temperature zone can be defined by a temperature that the human body cannot perceive. For example, the temperature in the cold temperature zone can be below 37°C. However, the boundary of the cold temperature zone is not limited to 37°C; any temperature between 36°C and 38°C can also be used as the boundary.

[0121] In some examples, please refer to Figure 9 and Figure 10 , Figure 9 According to Figure 3 The diagram shows a heat-conducting and heat-insulating structure 7 installed on the rear cover 21. Figure 10 According to Figure 4 The diagram shows a heat-conducting and heat-insulating structure 7 installed on the rear cover 21. Among them, Figure 9 and Figure 10 The dashed box in the image indicates the heating element area 8 (area R) and the cold temperature area (area L).

[0122] Multiple heating elements 8 can be provided, and multiple thermally conductive and insulating structures 7 can be provided. The second layer 712 of the thermally conductive and insulating structure 7 is attached to at least one heating element 8. In this way, it can be ensured that each heating element 8 can be covered by the thermally conductive and insulating structure 7, thereby increasing the coverage area of ​​the thermally conductive and insulating structure 7 over the heating elements 8.

[0123] In other examples, the number of heat-generating devices 8 and thermally conductive insulation structures 7 are equal, and they are in one-to-one contact. This ensures that the thermally conductive insulation structure 7 specifically covers each heat-generating device 8, allowing each heat-generating device 8 to be heat-conducted by a separate thermally conductive insulation structure 7, thus improving the thermal conductivity of the thermally conductive insulation structure 7 within the electronic device 100. Furthermore, the more thermally conductive insulation structures 7 on the inner surface of the back cover 21, the faster the heat from the heat-generating devices 8 dissipates within the electronic device 100, improving the performance of the electronic device 100.

[0124] In other examples, the number of thermally conductive and insulating structures 7 may be less than the number of heating devices 8, that is, multiple heating devices 8 may be bonded together through a second stack 712 of a thermally conductive and insulating structure 7. Therefore, this application does not impose any special limitation on the number of the aforementioned thermally conductive and insulating structures 7 and heating devices 8.

[0125] Based on the above, the thermal insulation substrate 71 possesses characteristics such as ultra-low density and ultra-low thermal conductivity. Furthermore, the thermal insulation substrate 71 has a density of 0.003 g / cm³, a thermal conductivity of 0.005 W / (mK), and a specific surface area of ​​5 x 10⁻⁶. 6 cm² / g~1.2x10 7 The thermal conductivity is 80%–99.8% cm² / g, the porosity is 1.0–2.0, and the refractive index is 1.05. Since the thermal conductivity of the insulating substrate 71 is positively correlated with its thermal conductivity performance (higher thermal conductivity means better thermal conductivity), by doping the second stack 712 of the insulating substrate 71 with thermally conductive material 72, the thermal conductivity of the second stack 712 is effectively improved. Therefore, the thermal conductivity of the second stack 712 after doping with thermally conductive material 72 is greater than that of the first stack 711, that is, the thermal conductivity of the second stack 712 is greater than 0.005 W / (mK).

[0126] In some embodiments, the components of the heat-insulating substrate 71 may include siloxanes, solvents, and catalysts. The siloxane may be at least one of tetraethyl orthosilicate, methyl orthosilicate, methyltrimethoxysilane, and trimethoxysilane. That is, the heat-insulating substrate 71 may contain one or more siloxanes. As the number of siloxane types in the heat-insulating substrate 71 increases, the amounts of solvent and catalyst added also need to be increased proportionally to ensure the stability of the content of siloxanes, solvents, and catalysts in the heat-insulating substrate 71, thereby ensuring the structural strength of the heat-insulating substrate 71.

[0127] The solvent can be water and ethanol, or water and ethylene glycol. Water can be used to react with the siloxane during the formation of the insulating substrate 71 to generate silicon dioxide. Ethanol or ethylene glycol serves to dilute the siloxane during the formation of the insulating substrate 71.

[0128] The catalyst can be acetic acid or hydrochloric acid, and the catalyst can be used to provide an acidic environment for the reaction of siloxane and solvent during the formation of the heat-insulating substrate 71.

[0129] In this way, during the formation of the insulating substrate 71, the siloxane reacts in the solvent and catalyst to generate silicon dioxide. The solvent and catalyst work together to delay the time for the siloxane to generate silicon dioxide, so that the siloxane can completely react into silicon dioxide.

[0130] The thermally conductive material 72 can be at least one of thermally conductive carbon fiber, thermally conductive graphene fiber, silicon nitride fiber, alumina powder, and graphite powder. That is, one thermally conductive material 72 or multiple thermally conductive materials 72 can be doped into the second stack 712.

[0131] In this way, based on the thermal conductivity of the thermally conductive material 72, doping the thermally conductive material 72 into the second stack 712 is beneficial to improving the thermal conductivity of the second stack 712, thereby ensuring the thermal conductivity performance of the second stack 712.

[0132] Based on the lightweight design concept of electronic device 100, the density of thermally conductive material 72 can be less than or equal to 1 g / cm³. 3 In this way, according to the density formula (mass = density x volume), when the volume remains constant, density and mass are positively correlated. The lower the density of the thermally conductive material 72, the lighter the mass of the thermally conductive material 72. The thermally conductive material 72 is beneficial to reducing the overall mass of the thermally conductive insulation structure 7 and the insulation structure 6, thereby contributing to the lightweighting of the electronic device 100.

[0133] Based on this, the preparation method of the above-mentioned thermally conductive and insulating structure 7 will be described in detail below. This preparation method may include the following steps S1-S5.

[0134] Step S1: Hydrochloric acid, acetic acid, and water are mixed in a ratio of 0.001:0.019:1 and stirred at a constant speed of 100 r / min to 500 r / min to form a first solution. The first solution is used to provide an acidic environment for the preparation of the heat-insulating substrate 71. Stirring at a speed of 100 r / min to 500 r / min ensures that the hydrochloric acid, acetic acid, and water are thoroughly mixed, making the density of the first solution more uniform and thus ensuring the consistency of the acidic environment within the first solution.

[0135] For example, the stirring rates of hydrochloric acid, acetic acid, and water can be 100 r / min, 200 r / min, 300 r / min, 400 r / min, or 500 r / min.

[0136] Furthermore, siloxane and ethanol are mixed at a ratio of 1:10 and stirred at a rate of 100 r / min to 500 r / min to form a second solution. Ethanol acts as a diluent for the siloxane; the 1:10 ratio ensures sufficient dilution. Stirring at 100 r / min to 500 r / min ensures thorough mixing of the siloxane and ethanol, resulting in a more uniform density in the second solution.

[0137] For example, the stirring rate of siloxane and ethanol can be 100 r / min, 200 r / min, 300 r / min, 400 r / min or 500 r / min.

[0138] Step S2: Pour the first solution and the second solution into the same beaker and mix them. Stir at a constant speed of 400-800 r / min for four hours to allow the water in the first solution and the siloxane in the second solution to undergo a hydrolysis-condensation reaction. The siloxane generates silicon dioxide in the hydrolysis-condensation reaction, thereby forming a sol Q after the first solution and the second solution are mixed (sol Q refers to the uncured state of the heat insulation substrate 71). Multiple small pores can be formed in the microstructure of sol Q, which will be referred to as pore structure below.

[0139] Stirring at a constant speed of 400-800 r / min for four hours can promote full contact between the components of the first solution and the components of the second solution, improve the efficiency of the hydrolysis-condensation reaction, make the hydrolysis-condensation reaction of the first solution and the second solution more complete, and thus make the pore structure distribution in sol Q more uniform.

[0140] For example, the mixing and stirring rate of the first solution and the second solution can be 400 r / min, 500 r / min, 600 r / min, 700 r / min or 800 r / min.

[0141] Step S3: Pour the above sol Q into a container, and add the thermally conductive material 72 to the container. Please refer to [link / reference needed]. Figure 11 , Figure 11 This is a state diagram of the addition of thermally conductive material 72 to sol Q.

[0142] In some examples, the density of the thermally conductive material 72 can be greater than the density of the sol Q. For example, the thermally conductive material 72 can be silicon nitride fiber. Since the gravity of the thermally conductive material 72 is positively correlated with its density, and the density of the sol Q is positively correlated with its buoyancy, the gravity of the thermally conductive material 72 is greater than the buoyancy of the sol Q. When the thermally conductive material 72 is added to a container containing the sol Q (in this example, the container could be a centrifuge tube), the thermally conductive material 72 will settle to the lower region of the sol Q under the influence of gravity. Please refer to [link to relevant documentation]. Figure 12 , Figure 12 This is a schematic diagram of the state of thermally conductive material 72 after precipitation.

[0143] Centrifuge at 800 rpm to 1200 rpm for 10 min, then let stand for 10 min to 30 min. Centrifugation is used to make the thermally conductive material 72 more evenly distributed in the lower region of sol Q. However, during centrifugation, some of the thermally conductive material 72 will be stirred to the upper region of sol Q. Therefore, letting stand allows the evenly stirred thermally conductive material 72 to completely settle in the lower region of sol Q.

[0144] Repeated centrifugation and settling operations are performed multiple times (e.g., 2 to 5 times) to ensure that the thermally conductive material 72 is evenly dispersed in the lower region of the sol Q, thereby forming a layered structure in the sol Q. Layering means that the lower region of the sol Q contains the thermally conductive material 72, while the upper region does not, thus dividing the sol Q into two regions.

[0145] In this way, by repeatedly centrifuging and allowing the sol Q containing the thermally conductive material 72 to stand, it is possible to ensure that the thermally conductive material 72 is evenly distributed in the lower region of the sol Q, thereby achieving the purpose of stratifying the sol Q. The centrifugation and standing method saves the time required for the sol Q to form stratification.

[0146] In other examples, the density of the thermally conductive material 72 can be less than the density of the sol Q. For example, the thermally conductive material 72 can be graphene fiber. Since the gravity of the thermally conductive material 72 is positively correlated with its density, and the density of the sol Q is positively correlated with its buoyancy, the gravity of the thermally conductive material 72 is less than the buoyancy of the sol Q. When the thermally conductive material 72 is added to the sol Q, it will be suspended in the upper region of the sol Q under the influence of the buoyancy of the sol Q. Please refer to [link to relevant documentation]. Figure 13 , Figure 13 This is a schematic diagram of the state of the thermally conductive material 72 after it is suspended.

[0147] Allow the sol to stand at room temperature for a period of time (e.g., 1 hour to 12 hours) to allow the thermally conductive material 72 to be uniformly suspended in the upper region of the sol Q, thus forming a layered structure. The specific standing time depends on the uniform suspension of the thermally conductive material 72 in the upper region of the sol Q. Layering means that the upper region of the sol Q contains the thermally conductive material 72, while the lower region does not, thereby dividing the sol Q into two regions.

[0148] In this way, by allowing the sol Q containing thermally conductive material 72 to stand, the thermally conductive material 72 is evenly distributed in the lower region of the sol Q, thereby achieving the purpose of stratifying the sol Q. The standing method simplifies the operation process of forming stratified sol Q.

[0149] In this example, the density of the second thermally conductive material 72 can also be greater than the density of the sol Q. During the period of standing at room temperature for a period of time (e.g., 1h to 12h), based on the positive correlation between the gravity and density of the thermally conductive material 72 and the positive correlation between the density and buoyancy of the sol Q, the gravity of the thermally conductive material 72 is greater than the buoyancy of the sol Q. After the thermally conductive material 72 is added to the sol Q and left to stand, the thermally conductive material 72 will settle to the lower region of the sol Q under the action of gravity.

[0150] Step S4: Seal the container opening and perform a gel reaction on the above-mentioned sol Q with a layered structure at an environment of 50℃~70℃ for 8h~12h, followed by aging for 8h~12h, thereby obtaining a soft thermally conductive and insulating structure 7.

[0151] For example, the ambient temperature for the gelation reaction can be 50℃, 55℃, 60℃, 65℃, 70℃, etc., and the gelation reaction time can be 8h, 9h, 10h, 11h, or 12h, etc. Furthermore, the aging time can be 8h, 9h, 10h, 11h, or 12h, etc.

[0152] The 50℃~70℃ temperature accelerates the gelation reaction, solidifying the sol Q with its layered structure. Aging for 8h~12h further ensures a more complete gelation reaction, allowing the siloxane in S1 to fully react into silicon dioxide, resulting in a more uniform pore structure distribution within the soft thermally conductive and insulating structure 7.

[0153] It should be explained that the porous structure of the flexible thermally conductive insulation structure 7 contains impurities such as solvents (e.g., water) and catalysts (e.g., acetic acid or hydrochloric acid) remaining after the hydrolysis-polymerization reaction. To obtain a pure flexible thermally conductive insulation structure 7, ethanol can be poured into a container and used to soak the flexible thermally conductive insulation structure 7 to displace the remaining impurities in the porous structure. To ensure that the flexible thermally conductive insulation structure 7 is completely immersed in ethanol, the volume of ethanol can be 2 to 5 times the volume of the flexible thermally conductive insulation structure 7, and the soaking time is 8 to 12 hours.

[0154] For example, the soaking time can be 8h, 9h, 10h, 11h or 12h, etc.

[0155] To completely replace the impurities within the pores of the flexible thermally conductive insulation structure 7 with ethanol, the ethanol can be replaced every 8 to 12 hours. By increasing the frequency of impurity replacement, the impurities within the pores of the flexible thermally conductive insulation structure 7 can be completely replaced with ethanol, thus obtaining a pure flexible thermally conductive insulation structure 7. After multiple impurity replacements with ethanol, the pores of the flexible thermally conductive insulation structure 7 are eventually filled with ethanol.

[0156] For example, the ethanol replacement time can be 8h, 9h, 10h, 11h or 12h, etc.

[0157] Step S5: Remove the soft thermally conductive insulation structure 7 from the container, place it into the drying device, and fill the drying device with a drying medium (e.g., carbon dioxide). Set the temperature and pressure inside the drying device to the critical pressure and critical temperature of the drying medium. The critical temperature can be set to 60℃~65℃, and the critical pressure can be set to 8.5Mpa~9.5Mpa. Then, perform supercritical drying on the soft thermally conductive insulation structure 7. After drying, a thermally conductive insulation structure is obtained.

[0158] For example, the critical temperature can be 60℃, 61℃, 62℃, 63℃, 64℃, or 65℃, etc., and the critical pressure can be 8.5Mpa, 8.6Mpa, 8.7Mpa, 8.8Mpa, 8.9Mpa, 9Mpa, 9.1Mpa, 9.2Mpa, 9.3Mpa, 9.4Mpa, or 9.5Mpa, etc.

[0159] The purpose of supercritical drying is to replace the ethanol within the porous structure of the soft thermally conductive and insulating structure 7 with a drying medium (e.g., carbon dioxide), and then remove the drying medium (e.g., carbon dioxide) from the porous structure, thereby maintaining the integrity of the overall framework and porous structure of the thermally conductive and insulating structure 7. Furthermore, the supercritical pressure within the drying device is controlled within the range of 8.5 MPa to 9.5 MPa to match the critical point of ethanol replacement with the drying medium, ensuring complete replacement of the ethanol.

[0160] In summary, through the above-described method for preparing the thermally conductive and insulating structure 7, the thermally conductive and insulating structure 7 forms a first stack 711 and a doped thermally conductive material 72. By concentrating the thermally conductive material 72, the thermal insulation effect of the first stack 711 on the back cover 21 is ensured, as well as the thermal conductivity performance for the heat-generating device 8, effectively solving the problem of local hot spots generated on the back cover 21 of the electronic device 100.

[0161] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0162] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A thermally conductive and insulating structure, characterized in that, include: The heat insulation substrate includes a first layer and a second layer, the first layer and the second layer are stacked, and the first layer and the second layer are integrally formed, and the second layer is doped with a thermally conductive material. The thermal insulation substrate comprises siloxane, solvent, and catalyst; the thermally conductive material is at least one selected from thermally conductive carbon fiber, thermally conductive graphene fiber, silicon nitride fiber, alumina powder, and graphite powder, and the density of the thermally conductive material is less than or equal to 1 g / cm³. 3 .

2. The thermally conductive and insulating structure according to claim 1, characterized in that, The siloxane is tetraethyl orthosilicate, orthosilicone Methyl ester, methyltrimethoxysilane, and at least one of trimethoxysilane.

3. The thermally conductive and insulating structure according to claim 1, characterized in that, The solvent is water and ethanol; And / or, water and ethylene glycol.

4. The thermally conductive and insulating structure according to claim 1, characterized in that, The catalyst is acetic acid and hydrochloric acid.

5. The thermally conductive and insulating structure according to any one of claims 1-4, characterized in that, The thermal conductivity of the second stack is greater than 0.005 W / (mK).

6. An electronic device, characterized in that, include: The housing includes the back cover and the mid-frame; The heating element is disposed within the middle frame; The thermally conductive and heat-insulating structure is the thermally conductive and heat-insulating structure according to any one of claims 1-5, wherein the thermally conductive and heat-insulating structure is disposed on the inner surface of the back cover, and the first stack is attached to the back cover, and the thermally conductive and heat-insulating structure overlaps at least partially with the vertical projection of the heating device on the back cover.

7. The electronic device according to claim 6, characterized in that, The second layer is bonded to the heating device.

8. The electronic device according to claim 6 or 7, characterized in that, The heating element is provided in multiple ways, and the thermally conductive and insulating structure is provided in multiple ways. The second layer of the thermally conductive and insulating structure is attached to at least one of the heating elements.

9. The electronic device according to claim 8, characterized in that, The number of heating elements is equal to the number of the thermally conductive and insulating structures, and they are in contact with each other in a one-to-one correspondence.

10. The electronic device according to any one of claims 6-9, characterized in that, The vertical projection of the thermally conductive and insulating structure on the back cover covers the vertical projection of the heating element on the back cover.

11. The electronic device according to any one of claims 6-10, characterized in that, The heat-generating device includes a motherboard bracket, a shielding cover, and a board-to-board connector bracket.

12. A method for preparing a thermally conductive and insulating structure according to any one of claims 1-5, characterized in that, The process includes the following steps: mixing and stirring the hydrochloric acid, the acetic acid, and the water to form a first solution; mixing and stirring the siloxane and the ethanol to form a second solution; and mixing and stirring the first solution and the second solution to form a sol. The thermally conductive material is added to the sol, and the sol with the thermally conductive material is placed in a centrifuge tube. The sol with the thermally conductive material is repeatedly centrifuged, stirred and allowed to stand to form a sol with a layered structure. The layered structure includes two regions, one region containing the thermally conductive material and the other region not containing the thermally conductive material. The sol with the layered structure is subjected to a gel reaction to form a soft thermally conductive and insulating structure; the soft thermally conductive and insulating structure is then dried to form the thermally conductive and insulating structure, wherein the two regions of the layered structure form the first and second layers of the thermally conductive and insulating structure.

13. The preparation method according to claim 12, characterized in that, The centrifugal stirring rate is 800 r / min to 1200 r / min, and the settling time is 10 min to 30 min.

14. The preparation method according to claim 12, characterized in that, After adding the thermally conductive material to the sol, the preparation method includes: The sol with the added thermally conductive material is placed in a container and left to stand at room temperature for 1 to 12 hours to form the sol with a layered structure.

15. The preparation method according to any one of claims 12-14, characterized in that, The mixing ratio of the hydrochloric acid, the acetic acid, and the water is 0.001:0.019:

1.

16. The preparation method according to claim 15, characterized in that, The mixing and stirring rate of the hydrochloric acid, the acetic acid, and the water is 100 r / min to 500 r / min.

17. The preparation method according to any one of claims 12-16, characterized in that, The mixing ratio of the siloxane to the ethanol is 1:

10.

18. The preparation method according to claim 17, characterized in that, The mixing and stirring rate of the siloxane and the ethanol is 100 r / min to 500 r / min.

19. The preparation method according to any one of claims 12-18, characterized in that, The mixing and stirring rate of the first solution and the second solution is 400 r / min to 800 r / min.

20. The preparation method according to any one of claims 12-19, characterized in that, The ambient temperature for the gelation reaction is 50℃~70℃.

21. The preparation method according to claim 20, characterized in that, The preparation method after performing a gelation reaction on the sol with the layered structure includes: The sol with the layered structure is aged to form the soft thermally conductive and insulating structure; Ethanol is added to the soft, thermally conductive, and insulating structure to carry out a displacement reaction.

22. The preparation method according to claim 21, characterized in that, The aging time is 8h~12h; the soft thermally conductive insulation structure is subjected to multiple replacement reactions, and each replacement reaction lasts for 8h~12h.

23. The preparation method according to any one of claims 12-22, characterized in that, The method for drying the soft thermally conductive and insulating structure includes: The soft thermally conductive and insulating structure is added to the drying device; A drying medium is added to the drying device and pressurized to obtain the thermally conductive and insulating structure.

24. The preparation method according to claim 23, characterized in that, The critical pressure applied by the drying device is 8.5 MPa to 9.5 MPa.

Images