基于能源模块调控μ-LED的光遗传学神经探针及其制备方法

CN120436577BActive Publication Date: 2026-07-17NANJING UNIV OF POSTS & TELECOMM
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING UNIV OF POSTS & TELECOMM
Filing Date
2025-05-07
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing wirelessly powered optogenetic systems suffer from difficulties in assembly, low integration, slow response speed, and poor control precision. Furthermore, traditional power supply methods restrict the free behavior and ecological validity of experimental animals.

Method used

A μ-LED optogenetic neural probe based on energy module regulation is used. The μ-LED excitation source and energy module array are connected by a flexible substrate and metal wires. The probe is powered by photoelectric conversion through external light energy. Photonic devices are integrated to perform regional collimation and light stimulation at specific depths. A GaN-based multi-quantum-well structure and a flexible substrate are used to achieve wireless power supply and high spatial resolution stimulation.

Benefits of technology

It enables high spatial resolution multiple access stimulation powered wirelessly, eliminating the need for animal restraint, thus increasing experimental freedom and the diversity of data acquisition, reducing the suffering of experimental subjects, and supporting long-term, fully wireless neuromodulation.

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Abstract

本发明公开基于能源模块调控μ‑LED的光遗传学神经探针及其制备方法,属于光遗传学神经探针技术领域;基于能源模块调控μ‑LED的光遗传学神经探针包括:包括柔性衬底,柔性衬底上端的前后两端分别设置有由μ‑LED激励源组成的阵列和由能源模块组成的阵列,μ‑LED激励源和能源模块之间通过金属线实现电性连接;外部光能通过能源模块进行光‑电转换,给μ‑LED激励源供能,且将外部入射光中的信号加载到μ‑LED,并在μ‑LED激励源表面集成不同的光子器件,来实现对检测对象的区域准直照射和特定深度点位的聚焦刺激。
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Citation Information

Patent Citations

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  • High-speed photonic integrated chip based on surface plasmon enhancement and preparation method

    CN113363345A