Scattering parameter measurement method and device for wire-bonding device, storage medium and electronic equipment
By constructing a symmetrical measurement model and a single-lead model, and using a de-embedding algorithm to eliminate the influence of bonding wires, the error problem in the measurement of scattering parameters of wire bonding devices was solved, achieving higher measurement accuracy and efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU SUNA PHOTOELECTRIC
- Filing Date
- 2025-05-07
- Publication Date
- 2026-07-21
AI Technical Summary
In the existing technology, the scattering parameter measurement method of wire bonding device has a large error. The main reason is that the inductance of the bonding wire introduces phase error and the nonlinear coupling effect between the clamp and the lead bond is difficult to separate accurately, especially in the millimeter wave band, which leads to group delay deviation.
By constructing a symmetrical measurement model and a single-lead model, the first and second scattering parameters are obtained. The bonding wire effect is eliminated by using a de-embedding algorithm, and the scattering parameters of the target device are calculated, including the separation of clamping effect and lead effect using the automatic clamp removal module of a vector network analyzer.
It significantly improves the accuracy and efficiency of scattering parameter measurement, eliminates the influence of bond lines, and makes the measurement results closer to the real situation.
Smart Images
Figure CN120446600B_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of radio frequency testing technology, specifically relating to a method, apparatus, storage medium, and electronic device for measuring the scattering parameters of a wire bonding device. Background Technology
[0002] In the fields of radio frequency, microwave, and high-frequency integrated circuits, measuring the scattering parameters of wire-bonded devices such as chips and RF modules is a crucial step in evaluating their high-frequency performance. Current technologies commonly employ vector network analyzers to measure the scattering parameters of these devices. However, traditional measurement methods exhibit significant errors when applied to the scattering parameter measurement of wire-bonded devices. The main reasons are as follows:
[0003] 1. Since the standard calibration of vector network analyzers often relies on calibration plates, it is impossible to eliminate the influence of bonding wires introduced by wire bonding devices. For example, the inductance of bonding wires is usually 300-400 pH, which will introduce phase error and may cause significant group delay deviation in the millimeter wave band.
[0004] 2. When measuring scattering parameters, it is usually necessary to set up a fixture between the vector network analyzer and the test piece, and use a de-embedding algorithm to remove the influence of the fixture on the parameters. However, traditional linear de-embedding algorithms are difficult to accurately separate the nonlinear coupling effect between the fixture and the lead bond. Especially when the lead and the test piece form an asymmetric structure, the electromagnetic field distribution becomes complicated, leading to model mismatch. Summary of the Invention
[0005] The purpose of this application is to provide a method, apparatus, storage medium, and electronic device for measuring the scattering parameters of a wire bonding device, so as to solve the technical problem that the existing scattering parameter measurement methods have large errors when applied to the measurement of scattering parameters of wire bonding devices.
[0006] To achieve the above objectives, the first aspect of this application provides a method for measuring the scattering parameters of a wire bonding device, comprising:
[0007] Obtain the first scattering parameter, which is the scattering parameter of the first lead whose two ends are respectively bonded to the first pad and the second pad;
[0008] Obtain a second scattering parameter, which is the total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices. The pair of target devices are respectively disposed on the first pad and the second pad, and the pair of target devices are axially symmetrically spaced apart. The second lead has the same length as the first lead.
[0009] The third scattering parameter is calculated based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm. The third scattering parameter is the scattering parameter of the pair of target devices that are directly connected in series.
[0010] Based on the third scattering parameter, the scattering parameters of the target device are calculated.
[0011] In one or more embodiments, the step of calculating the third scattering parameter based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm specifically involves:
[0012] The automatic fixture removal module of the vector network analyzer is invoked to solve for the third scattering parameter in reverse based on the first scattering parameter and the second scattering parameter.
[0013] In one or more embodiments, the step of calculating the scattering parameters of the target device based on the third scattering parameter includes:
[0014] The third scattering parameter is converted into an impedance parameter based on the reference impedance to obtain the first impedance parameter;
[0015] Based on the first impedance parameter, a second impedance parameter is calculated, and the second impedance parameter is the impedance parameter of the target device;
[0016] The second impedance parameter is converted into a scattering parameter based on the reference impedance to obtain the scattering parameter of the target device.
[0017] In one or more embodiments, the step of calculating the second impedance parameter based on the first impedance parameter specifically includes:
[0018] Calculate half the value of the first impedance parameter to obtain the second impedance parameter.
[0019] In one or more embodiments, the pair of target devices are arranged symmetrically at the center.
[0020] In one or more embodiments, the first lead and the second lead have the same shape and material.
[0021] In one or more embodiments, the target device is a capacitor.
[0022] In one or more embodiments, the first lead and the second lead are bonding alloy wires.
[0023] To achieve the above objectives, a second aspect of this application provides a device for measuring the scattering parameters of a wire bonding device, comprising:
[0024] The first acquisition module is used to acquire the first scattering parameter, which is the scattering parameter of the first lead whose two ends are respectively bonded to the first pad and the second pad;
[0025] The second acquisition module is used to acquire the second scattering parameter, which is the total scattering parameter of a pair of target devices and the second lead connecting the pair of target devices. The pair of target devices are respectively disposed on the first pad and the second pad, and the pair of target devices are axially symmetrically spaced apart. The second lead has the same length as the first lead.
[0026] The de-embedding module is used to calculate a third scattering parameter based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm. The third scattering parameter is the scattering parameter of the pair of target devices that are directly connected in series.
[0027] The output module is used to calculate the scattering parameters of the target device based on the third scattering parameter.
[0028] To achieve the above objectives, a third aspect of this application provides an electronic device, comprising:
[0029] At least one processor; and
[0030] A memory that stores instructions that, when executed by the at least one processor, cause the at least one processor to perform the scattering parameter measurement method as described in any of the above embodiments.
[0031] To achieve the above objectives, a fourth aspect of this application provides a machine-readable storage medium storing executable instructions that, when executed, cause the machine to perform the scattering parameter measurement method as described in any of the above embodiments.
[0032] The advantages of this application, which differ from existing technologies, are:
[0033] This application constructs a symmetrical measurement model and a single-lead model, enabling the measurement of scattering parameters of both the symmetrical model and the single-lead model. Through a de-embedding algorithm, the scattering parameters of a pair of target devices directly connected in series under ideal conditions can be obtained, and the scattering parameters of the target devices can then be calculated. This eliminates the influence of the bonding wire introduced by the wire bonding device in the measurement results, significantly improving measurement accuracy. Furthermore, the scattering parameter measurement method of this application is simpler and faster than traditional measurement methods, improving measurement efficiency. Attached Figure Description
[0034] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0035] Figure 1 This is a flowchart illustrating one embodiment of the scattering parameter measurement method for the wire bonding device of this application;
[0036] Figure 2 This is a schematic diagram of the structure of the first lead of this application;
[0037] Figure 3 This is a schematic diagram of the structure of the target device and the second lead in this application;
[0038] Figure 4 yes Figure 1 A flowchart illustrating one embodiment corresponding to S400;
[0039] Figure 5 This is a graph showing the scattering parameter measurement results of Embodiment 1 of this application;
[0040] Figure 6 This is a graph showing the scattering parameter measurement results of Comparative Example 1 of this application;
[0041] Figure 7 This is a schematic diagram of one embodiment of the scattering parameter measuring device for the wire bonding device of this application;
[0042] Figure 8 This is a schematic diagram of one embodiment of the electronic device of this application. Detailed Implementation
[0043] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of this application.
[0044] Vector network analyzers (VNAs) are the primary tools for measuring scattering parameters (S-parameters). VNAs achieve ratio measurements by transmitting a known signal and simultaneously detecting the amplitude and phase of the reflected and transmitted waves, combined with a reference channel, thus eliminating the influence of absolute power fluctuations.
[0045] When performing measurements with a VNA, a fixture is usually placed between the VNA and the device under test (DUT). In order to eliminate the influence of the fixture on the DUT parameters, the VNA is equipped with an automatic fixture removal (AFR) module. The AFR module can separate the coupling effect between the fixture and the DUT and reverse the contribution of the fixture from the measurement results to restore the true response of the DUT.
[0046] However, the AFR module of VNA can only be applied to the de-embedding process of symmetrical clamping effects and cannot eliminate the influence of bond lines on measurement results.
[0047] To address the issue of significant errors in S-parameter measurements of wire bonding devices due to the influence of leads, the applicant has developed a novel method for measuring the scattering parameters of wire bonding devices. This method, through a symmetrical test model, can eliminate the influence of leads in the test results of the device under test, thereby significantly improving the accuracy of S-parameter measurements.
[0048] Specifically, please refer to Figure 1 , Figure 1 This is a flowchart illustrating one embodiment of the scattering parameter measurement method for the wire bonding device of this application.
[0049] like Figure 1 As shown, the measurement method includes:
[0050] S100, Obtain the first scattering parameters.
[0051] The first scattering parameter is the scattering parameter of the first lead whose two ends are bonded to the first pad and the second pad, respectively.
[0052] To ensure the symmetry of the overall structure, the first and second pads can be arranged symmetrically at intervals.
[0053] Specifically, please refer to Figure 2 , Figure 2 This is a schematic diagram of the structure of the first lead in this application. (See diagram below.) Figure 2 As shown, the two ends of the first lead 300 are directly bonded to the first pad 100 and the second pad 200. At this time, the scattering parameters of the first lead 300, i.e. the first scattering parameters, can be obtained by VNA measurement.
[0054] During measurement, the VNA can first undergo SOLT calibration, which involves sequentially performing short-circuit, open-circuit, load, and through-circuit calibration procedures using standard components. Afterward, the two ends of the VNA are connected to the two ends of the first lead 300 to measure the first scattering parameter.
[0055] S200, Obtain the second scattering parameter.
[0056] The second scattering parameter is the total scattering parameter of a pair of target devices and the second lead connecting the pair of target devices; the pair of target devices are respectively located on the first pad and the second pad.
[0057] The second lead has the same length as the first lead, so the scattering parameters of the first lead can be used to simulate the scattering parameters of the second lead, which helps to de-embed the second lead from the second scattering parameters.
[0058] In one embodiment, in order to further reduce the difference in scattering parameters between the first lead and the second lead and improve the accuracy of subsequent calculations, the shape and material of the first lead and the second lead can be the same, so that the first lead and the second lead are completely identical lead structures.
[0059] Specifically, please refer to Figure 3 , Figure 3 This is a schematic diagram of the structure of the target device and the second lead in this application. Figure 3 As shown, a pair of target devices 400 are respectively arranged on the first pad 100 and the second pad 200. Specifically, the target devices can be mounted on the pads using solder paste or conductive silver paste.
[0060] To ensure the symmetry of the overall structure, the pair of target devices 400 are arranged symmetrically with the same symmetrical structure as the first pad 100 and the second pad 200.
[0061] More preferably, in order to further improve the symmetry of the overall structure, the pair of target devices 400 can also be arranged in a centrally symmetrical manner.
[0062] In one embodiment, the target device 400 can be a capacitor, such as a silicon-based capacitor, and the first lead 300 and the second lead 500 can be bonding wires; in other embodiments, the target device 400 can also be other components, such as chips, radio frequency modules, etc., and the first lead 300 and the second lead 500 can also be other components that can achieve electrical connection, all of which can achieve the effect of this embodiment.
[0063] Similar to the measurement of the first scattering parameter, after the VNA is SOLT calibrated, both ends of the VNA can be connected to a pair of target devices 400 respectively, and the total scattering parameter of the pair of target devices 400 and the second lead 500, i.e., the second scattering parameter, can be measured.
[0064] S300. Based on the de-embedding algorithm, the first scattering parameter is de-embedded in the second scattering parameter to obtain the third scattering parameter.
[0065] The first scattering parameter includes the scattering parameter of the first lead. The first lead and the second lead have the same shape, material and size. Therefore, the first scattering parameter can be used as the scattering parameter of the second lead. Then, the first scattering parameter is embedded in the second scattering parameter to obtain the scattering parameter of a pair of target devices that are directly connected in series without any intermediate connection in an ideal state, which is the third scattering parameter.
[0066] In one implementation, since the pair of target devices are symmetrically arranged, the influence of the embedded second lead can be eliminated by calling the AFR module of the vector network analyzer.
[0067] In this field, the AFR module is used to separate the effects of symmetrical fixtures and the effects of the device under test (DUT), and then extract the scattering parameters of the DUT from the test results. Since a pair of target devices are symmetrically arranged in this embodiment, the effects of the symmetrical target devices and the effects of the second lead can be separated by the AFR module, and then the scattering parameters of the pair of target devices connected in series can be extracted from the test results.
[0068] Specifically, the third scattering parameter of a pair of target devices directly connected in series and the first scattering parameter of the second lead can be used to obtain the total scattering parameter, i.e., the second scattering parameter, through a cascade formula; the AFR module can remove the first scattering parameter from the second scattering parameter to obtain the third scattering parameter. The specific de-embedding algorithm of the AFR module is well known to those skilled in the art and will not be described in detail here.
[0069] S400. Based on the third scattering parameter, the scattering parameters of the target device are calculated.
[0070] After obtaining the third scattering parameter of a pair of target devices directly connected in series, the scattering parameter of a single target device can be calculated. The influence of embedded leads has been removed from the scattering parameter, which significantly improves the accuracy.
[0071] Specifically, please refer to Figure 4 , Figure 4 yes Figure 1 A flowchart of one embodiment corresponding to S400.
[0072] like Figure 4 As shown, the methods for calculating the scattering parameters of the target device include:
[0073] S401. Based on the reference impedance, the third scattering parameter is converted into an impedance parameter to obtain the first impedance parameter. Specifically, the conversion formula for the first impedance parameter can be as follows:
[0074] Z _total =s2z(S,Z0);
[0075] In the formula, s2z is the conversion function from scattering parameter to impedance parameter, Z0 is the reference impedance, S is the third scattering parameter, and Z... _total This is the first impedance parameter.
[0076] For example, in one implementation, the above-mentioned s2z function can be specifically defined as:
[0077]
[0078] In the formula, S 11 S is the reflection coefficient of port 1. 12 S is the reverse transmission coefficient. 21 S is the forward transmission coefficient. 22The reflection coefficient of port 2;
[0079] Z 11 Z is the input impedance of port 1. 12 For reverse transfer impedance, Z 21 For the positive transfer impedance, Z 22 The output impedance of port 2 is given.
[0080] The reference impedance Z0 is the base impedance value for port matching during S-parameter measurement, which is usually consistent with the system characteristic impedance. In one embodiment, the reference impedance can be 50Ω, and in other embodiments, the reference impedance can be 75Ω, or it can be other values.
[0081] S402. Based on the first impedance parameter, the second impedance parameter is calculated.
[0082] The second impedance parameter is the impedance parameter of the target device.
[0083] Understandably, the first impedance parameter includes the sum of the impedance parameters of two target devices that are directly connected in series. Therefore, the impedance parameter of a single target device is half of the first impedance parameter.
[0084] Specifically, the formula for calculating the second impedance parameter can be as follows:
[0085] Z _single =Z _total / 2;
[0086] In the formula, Z _total Z is the first impedance parameter. _single This is the second impedance parameter.
[0087] S403. Based on the reference impedance, the second impedance parameter is converted into a scattering parameter to obtain the scattering parameter of the target device.
[0088] After obtaining the impedance parameters of a single target device, they can be converted into scattering parameters, and thus the scattering parameters of the target device can be obtained.
[0089] In one embodiment, the conversion formula for the scattering parameters of the target device can be as follows:
[0090] S _single =z2s(Z _single ,Z0);
[0091] In the formula, z2s is the conversion function from impedance parameter to scattering parameter, Z0 is the reference impedance, and Z _single S is the second impedance parameter. _single These are the scattering parameters of the target device.
[0092] For example, in one implementation, the above z2s function can be specifically defined as:
[0093]
[0094] In the formula, ΔZ is the difference between the impedance parameter and the reference impedance Z0.
[0095] Based on the measurement methods of the above embodiments, by constructing a symmetrical measurement model and a single-lead model, the scattering parameters of the symmetrical model and the scattering parameters of the single lead are measured. By using the de-embedding algorithm, the scattering parameters of a pair of target devices directly connected in series under ideal conditions can be obtained, and then the scattering parameters of the target devices can be calculated. These scattering parameters have eliminated the influence of the bonding wire introduced by the wire bonding device, which significantly improves the accuracy.
[0096] The beneficial effects of the technical solution of this application will be further explained in detail below with reference to specific embodiments.
[0097] Example 1:
[0098] A first gold wire is used to bond two centrally symmetrical pads on the PCB board. The vector network analyzer is then SOLT calibrated, and the scattering parameters of the gold wire, i.e., the first scattering parameters, are measured.
[0099] Remove the gold wires, attach the same capacitors under test to the two pads with solder paste, and bond the two capacitors under test with a second gold wire. The second gold wire has the same shape and size as the first gold wire. Perform SOLT calibration on the vector network analyzer, and then measure the scattering parameter between the two capacitors under test, i.e., the second scattering parameter.
[0100] based on Figure 1 The method shown calculates the scattering parameters S of a single capacitor under test based on the first and second scattering parameters. 21 ,get Figure 5 , Figure 5 This is a graph showing the scattering parameter measurement results of Embodiment 1 of this application.
[0101] Comparative Example 1:
[0102] The capacitor under test (UST) was mounted on a PCB pad identical to that in Example 1. The UST and another pad were directly bonded together using gold wire bonding. The vector network analyzer was then subjected to SOLT calibration, and the scattering parameters S of the UST were measured. 21 ,get Figure 6 , Figure 6 This is a graph showing the scattering parameter measurement results of Comparative Example 1 of this application.
[0103] Example of results:
[0104] Comparison Figure 5 and Figure 6The scattering parameters for Example 1 are: S21 = -0.17dB@20GHz, S21 = -0.27dB@40GHz, S21 = -0.368dB@67GHz; the scattering parameters for Comparative Example 1 are: S21 = -0.448dB@20GHz, S21 = -1.426dB@40GHz, S21 = -3.078dB@67GHz.
[0105] As can be seen from the above data, the S21 measured in Example 1 is closer to 0dB than that in Comparative Example 1. The measurement results of Example 1 are more consistent with the actual situation. Therefore, the measurement accuracy of Example 1 is significantly better than that of the traditional scheme in Comparative Example 1.
[0106] This application also provides a device for measuring the scattering parameters of a wire bonding device; please refer to [link to relevant documentation]. Figure 7 , Figure 7 This is a schematic diagram of one embodiment of the scattering parameter measuring device for the wire bonding device of this application.
[0107] like Figure 7 As shown, the device includes a first acquisition module 21, a second acquisition module 22, an embedding module 23, and an output module 24.
[0108] The first acquisition module 21 is used to acquire the first scattering parameter, which is the scattering parameter of the first lead whose two ends are respectively bonded to the first pad and the second pad;
[0109] The second acquisition module 22 is used to acquire the second scattering parameter, which is the total scattering parameter of a pair of target devices and the second lead connecting the pair of target devices. The pair of target devices are respectively disposed on the first pad and the second pad, and the pair of target devices are axially symmetrically spaced apart. The length of the second lead is the same as that of the first lead.
[0110] The de-embedding module 23 is used to calculate the third scattering parameter based on the first scattering parameter, the second scattering parameter and the de-embedding algorithm. The third scattering parameter is the scattering parameter of a pair of target devices that are directly connected in series.
[0111] The output module 24 is used to calculate the scattering parameters of the target device based on the third scattering parameter.
[0112] As referred above Figures 1 to 6 The method for measuring scattering parameters according to embodiments of this specification has been described. The details mentioned in the above description of the method embodiments also apply to the scattering parameter measuring apparatus of the embodiments of this specification. The above-described scattering parameter measuring apparatus can be implemented in hardware, software, or a combination of hardware and software.
[0113] This application also provides an electronic device, please refer to... Figure 8 , Figure 8 This is a schematic diagram of one embodiment of the electronic device of this application. For example... Figure 8 As shown, the electronic device 30 may include at least one processor 31, a memory 32 (e.g., non-volatile memory), a RAM 33, and a communication interface 34, and the at least one processor 31, memory 32, RAM 33, and communication interface 34 are connected together via a bus 35. The at least one processor 31 executes at least one computer-readable instruction stored or encoded in the memory 32.
[0114] It should be understood that the computer-executable instructions stored in memory 32, when executed, cause at least one processor 31 to perform the above-described combinations in the various embodiments of this specification. Figures 1-5 The description includes various operations and functions.
[0115] In the embodiments of this specification, electronic device 30 may include, but is not limited to: personal computer, server computer, workstation, desktop computer, laptop computer, notebook computer, mobile electronic device, smartphone, tablet computer, cellular phone, personal digital assistant (PDA), handheld device, messaging device, wearable electronic device, consumer electronic device, etc.
[0116] According to one embodiment, a program product, such as a machine-readable medium, is provided. The machine-readable medium may have instructions (i.e., the elements implemented in software as described above), which, when executed by a machine, cause the machine to perform the above-described combinations of the various embodiments of this specification. Figures 1-7 The various operations and functions described. Specifically, a system or apparatus equipped with a readable storage medium storing software program code that implements the functions of any of the embodiments described above, and enabling the computer or processor of the system or apparatus to read and execute the instructions stored in the readable storage medium.
[0117] In this case, the program code read from the readable medium itself can perform the functions of any of the above embodiments, and therefore the machine-readable code and the readable storage medium storing the machine-readable code constitute a part of this specification.
[0118] Examples of readable storage media include floppy disks, hard disks, magneto-optical disks, optical disks (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD-RW), magnetic tapes, non-volatile memory cards, and ROMs. Alternatively, program code can be downloaded from a server computer or the cloud via a communication network.
[0119] Those skilled in the art will understand that the various embodiments disclosed above can be modified and varied without departing from the spirit of the invention. Therefore, the scope of protection of this specification should be defined by the appended claims.
[0120] It should be noted that not all steps and units in the above process and system structure diagrams are mandatory; some steps or units can be omitted according to actual needs. The execution order of each step is not fixed and can be determined as needed. The device structure described in the above embodiments can be a physical structure or a logical structure. That is, some units may be implemented by the same physical client, or some units may be implemented by multiple physical clients, or they may be jointly implemented by certain components in multiple independent devices.
[0121] In the above embodiments, the hardware units or modules can be implemented mechanically or electrically. For example, a hardware unit, module, or processor may include permanent dedicated circuitry or logic (such as a dedicated processor, FPGA, or ASIC) to perform the corresponding operation. The hardware unit or processor may also include programmable logic or circuitry (such as a general-purpose processor or other programmable processor), which can be temporarily configured by software to perform the corresponding operation. The specific implementation method (mechanical, dedicated permanent circuitry, or temporarily configured circuitry) can be determined based on cost and time considerations.
[0122] The specific embodiments described above with reference to the accompanying drawings are exemplary embodiments, but do not represent all embodiments that can be implemented or fall within the scope of the claims. The term "exemplary" as used throughout this specification means "serving as an example, instance, or illustration" and does not imply that it is "preferred" or "advantageous" compared to other embodiments. Specific details are included to provide an understanding of the described techniques. However, these techniques can be practiced without these specific details. In some instances, well-known structures and apparatuses are shown in block diagram form to avoid obscuring the concepts of the described embodiments.
[0123] The foregoing description of this disclosure is provided to enable any person skilled in the art to implement or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles applicable herein can be applied to other variations without departing from the scope of this disclosure. Therefore, this disclosure is not limited to the examples and designs described herein, but is consistent with the widest scope of the principles and novel features disclosed herein.
Claims
1. A method for measuring the scattering parameters of a wire bonding device, characterized in that, include: Obtain the first scattering parameter, which is the scattering parameter of the first lead whose two ends are respectively bonded to the first pad and the second pad; Obtain a second scattering parameter, which is the total scattering parameter of a pair of target devices and a second lead connecting the pair of target devices. The pair of target devices are respectively disposed on the first pad and the second pad, and the pair of target devices are axially symmetrically spaced apart. The second lead has the same length as the first lead. The third scattering parameter is calculated based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm. The third scattering parameter is the scattering parameter of the pair of target devices that are directly connected in series. Based on the third scattering parameter, the scattering parameters of the target device are calculated.
2. The scattering parameter measurement method according to claim 1, characterized in that, The specific steps for calculating the third scattering parameter based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm are as follows: The automatic fixture removal module of the vector network analyzer is invoked to solve for the third scattering parameter in reverse based on the first scattering parameter and the second scattering parameter.
3. The scattering parameter measurement method according to claim 1, characterized in that, The steps for calculating the scattering parameters of the target device based on the third scattering parameter include: The third scattering parameter is converted into an impedance parameter based on the reference impedance to obtain the first impedance parameter; Based on the first impedance parameter, a second impedance parameter is calculated, and the second impedance parameter is the impedance parameter of the target device; The second impedance parameter is converted into a scattering parameter based on the reference impedance to obtain the scattering parameter of the target device.
4. The scattering parameter measurement method according to claim 3, characterized in that, The specific steps for calculating the second impedance parameter based on the first impedance parameter are as follows: Calculate half the value of the first impedance parameter to obtain the second impedance parameter.
5. The scattering parameter measurement method according to claim 1, characterized in that, The pair of target devices are arranged symmetrically at the center.
6. The scattering parameter measurement method according to claim 1, characterized in that, The first lead and the second lead have the same shape and material.
7. The scattering parameter measurement method according to claim 1, characterized in that, The target device is a capacitor; and / or, The first lead and the second lead are bonding alloy wires.
8. A device for measuring the scattering parameters of a wire bonding device, characterized in that, include: The first acquisition module is used to acquire the first scattering parameter, which is the scattering parameter of the first lead whose two ends are respectively bonded to the first pad and the second pad; The second acquisition module is used to acquire the second scattering parameter, which is the total scattering parameter of a pair of target devices and the second lead connecting the pair of target devices. The pair of target devices are respectively disposed on the first pad and the second pad, and the pair of target devices are axially symmetrically spaced apart. The second lead has the same length as the first lead. The de-embedding module is used to calculate a third scattering parameter based on the first scattering parameter, the second scattering parameter, and the de-embedding algorithm. The third scattering parameter is the scattering parameter of the pair of target devices that are directly connected in series. The output module is used to calculate the scattering parameters of the target device based on the third scattering parameter.
9. An electronic device, comprising: At least one processor; as well as A memory storing instructions that, when executed by the at least one processor, cause the at least one processor to perform the scattering parameter measurement method as described in any one of claims 1 to 7.
10. A machine-readable storage medium storing executable instructions that, when executed, cause the machine to perform the scattering parameter measurement method as described in any one of claims 1 to 7.