一种正性光刻胶组合物及其应用
By developing a positive photoresist composition containing polysulfide polymers, the problems of negative photolithography properties of metal oxide cluster photoresists and low sensitivity of polymer photoresists have been solved, achieving high-sensitivity and high-resolution photolithography effects suitable for EUV lithography processes in integrated circuits.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANKAI UNIV
- Filing Date
- 2025-06-06
- Publication Date
- 2026-07-17
AI Technical Summary
Metal oxide cluster photoresists exhibit negative photolithography properties during the photolithography process, making it difficult to meet the requirements of EUV photolithography for integrated circuits. Furthermore, polymer photoresists have low sensitivity in the extreme ultraviolet region.
A positive photoresist composition was developed, comprising a polysulfide polymer compound and a photoresist solvent, which forms a cross-linked network structure through a thiol olefin click reaction, and utilizes the high light absorption and post-exposure fracture characteristics of antimony to achieve positive photolithography.
It achieves high sensitivity and high resolution lithography effects, and is suitable for electron beam, 248nm lithography, 193nm lithography and extreme ultraviolet lithography, meeting the lithography process requirements of integrated circuits.
Smart Images
Figure CN120447304B_ABST