Semiconductor component heater cleaning method

Abstract

The application provides a semiconductor component heater cleaning method, and relates to the technical field of semiconductor production equipment maintenance, and the method comprises the following steps: cleaning the heater by using a cleaning solution; washing the heater by using a high-pressure water gun; repeating the above steps for 8-15 times; physically cleaning the heater; wherein the deep cleaning is performed by using high-pressure air mist cleaning; wherein the surface roughness of the cleaned heater is less than 1 mu m, the aperture increase rate before and after cleaning is 5-8.5%, and compared with the heater without adhering pollutants, the aperture change rate of the cleaned heater is 0.07-0.3%. The application can simultaneously remove inorganic deposits, organic residue and small particle pollutants on the surface of the heater by using chemical cleaning combined with improved physical cleaning, and effectively prolongs the service life of the component.

Description

Technical Field

[0001] This invention provides a method for cleaning heaters of semiconductor components, relating to the field of semiconductor manufacturing equipment maintenance technology. Background Technology

[0002] In the semiconductor manufacturing field, chemical vapor deposition (CVD) is a crucial process widely used to prepare various high-performance thin film materials. However, as the production process continues, equipment components in the CVD reaction chamber, such as the heaters made from brand-new aluminum substrate, gradually reach the end of their service life and face the issue of scrapping. To extend equipment life, reduce costs, and maintain production efficiency, surface treatment and cleaning of the heaters to restore their original roughness has become a significant technical challenge.

[0003] The etching products formed on the heater surface during CVD processes are complex in composition, mainly including the following: Inorganic deposits: such as metal oxides and silicides. These inorganic substances are usually produced by the decomposition of reactant gases at high temperatures and deposited on the heater surface. Organic residues: During CVD processes, the gases used may contain organic components, which may not be completely decomposed during the reaction and remain on the heater surface. Carbon deposition: In some CVD processes, such as the preparation of diamond films, a large amount of carbon deposits are generated. These carbon deposits are not only difficult to remove but also cause serious damage to the heater surface. Byproducts and unreacted gases: Byproducts and unreacted gases generated during CVD processes may also deposit on the heater surface, forming one or more complex compounds. In addition, the accumulation of deposits can cover the original microstructure of the heater surface, making it uneven and increasing its roughness. The scouring of airflow and reaction products can cause physical wear on the heater surface, damaging its surface structure and leading to increased roughness. The heater undergoes thermal expansion and contraction during prolonged high-temperature operation; this change leads to alterations in the surface microstructure, thus affecting roughness.

[0004] To restore the surface roughness of the heater and extend its service life, effective cleaning methods are required. Currently, commonly used cleaning methods mainly include the following:

[0005] Physical Cleaning: Ultrasonic Cleaning: Uses ultrasonic vibrations to separate dirt from the heater surface using water or a cleaning solution. This method is suitable for removing loose deposits and organic residues from the surface. Spray Cleaning: Uses high-pressure airflow or liquid to rinse away dirt. This method is suitable for removing inorganic and carbon deposits from the surface. Ion Beam Cleaning: Uses an ion beam to bombard the heater surface to remove residual organic or inorganic matter. This method is highly efficient and leaves no residue, but the equipment cost is high. Chemical Cleaning: Acid Washing: Uses acidic solutions (such as nitric acid, hydrochloric acid, etc.) to dissolve inorganic deposits such as metal oxides. This method is suitable for removing inorganic and carbon deposits from the heater surface. Alkaline Washing: Uses alkaline solutions (such as sodium hydroxide, ammonium hydroxide, etc.) to remove organic matter or organic residues. This method is suitable for removing organic residues from the heater surface. Solvent Cleaning: Uses organic solvents (such as acetone, ether, etc.) to dissolve specific types of contaminants. This method is suitable for removing specific types of organic residues from the heater surface. Dry Cleaning: Plasma Cleaning: Uses plasma to bombard the heater surface to remove surface contaminants. This method is highly efficient and leaves no residue, but the equipment cost is high. Laser cleaning: This method uses a laser beam to irradiate the heater surface, causing surface contaminants to vaporize or peel off instantly. This method is suitable for removing stubborn deposits and organic residues from the heater surface. Although the above cleaning methods are effective in restoring the surface roughness of the heater, they still have some drawbacks and limitations: Ultrasonic cleaning may be limited in its effectiveness for deposits and contaminants that are tightly adhered to the heater surface. High-pressure airflow or liquid may not completely remove contaminants deposited in the tiny crevices of the heater surface. Ion beam cleaning equipment is expensive and has high requirements for the operating environment, making it unsuitable for large-scale applications. Chemical cleaning cannot remove all deposits and affects its service life. Plasma cleaning equipment is expensive and has high requirements for the operating environment, making it unsuitable for large-scale applications. Laser cleaning equipment is expensive and requires high operating skills, making it unsuitable for cleaning all types of heaters.

[0006] Existing cleaning methods still have some shortcomings and limitations. In the future, with the continuous development of semiconductor manufacturing technology, it is necessary to develop more efficient, environmentally friendly, and economical cleaning methods to address the challenges posed by surface contamination and roughness changes in heaters. Summary of the Invention

[0007] To solve the above problems, the present invention is characterized by the following specific solution:

[0008] A method for cleaning a heater for semiconductor components includes the following steps:

[0009] S1. Clean the heater with a cleaning solution;

[0010] S2. Use a high-pressure water gun to flush the heater;

[0011] S3. Repeat S1-S2, 8-15 times;

[0012] S4. Perform physical cleaning on the heater;

[0013] The surface roughness of the heater after cleaning is no greater than 1 μm, preferably 0.3 to 0.5 μm, and the pore size of the heater before and after cleaning increases by 5 to 8.5%. Compared with the heater without contaminants, the pore size of the heater after cleaning changes by 0.07 to 0.3%.

[0014] In one embodiment of the present invention, S1, cleaning the heater with a cleaning solution, includes S1-1, cleaning the heater with a composite cleaning solution I, and S1-2, performing deep cleaning of the heater with a composite cleaning solution II; wherein, the deep cleaning is performed using high-pressure aerosol cleaning; the composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol.

[0015] In one embodiment of the present invention, the composite cleaning solution II includes deionized water, sodium dodecyl sulfate, aminosulfonic acid, sodium silicate, and propylene glycol.

[0016] In one embodiment of the present invention, the composite cleaning solution I comprises 2-3 wt% hydrogen peroxide, 1-2 wt% EDTA, 0.5-1 wt% sodium potassium tartrate, and 0.2-0.5 wt% polyethylene glycol.

[0017] In one embodiment of the present invention, the composite cleaning solution II comprises 1.5-2.5 wt% sodium dodecyl sulfate, 0.5-0.8 wt% aminosulfonic acid, 0.3-0.5 wt% sodium silicate, and 0.5-0.8 wt% propylene glycol.

[0018] In one embodiment of the present invention, step S1-1 specifically includes: immersing the heater in a composite cleaning solution I at 35-45°C for 20-30 minutes, during which the cleaning solution is stirred. The method of stirring the cleaning solution is to use a stirrer or magnetic stirring.

[0019] In one embodiment of the present invention, step S1-2 specifically includes: immersing the heater in a composite cleaning solution II at 55-65°C for 40-50 minutes, during which ultrasonic assistance is performed at a frequency of 40-50 kHz for 10-40 minutes.

[0020] In one embodiment of the present invention, step S4 specifically includes: preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0021] In one embodiment of the present invention, preliminary polishing includes: uniformly polishing the working surface of the heater with 400# sandpaper to remove rough deposits and etching marks; and initially polishing the non-working surface of the heater with an 800# scouring pad to remove surface dirt. Even pressure should be maintained during polishing to avoid excessive wear in certain areas.

[0022] In one embodiment of the present invention, fine polishing includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of alcohol or acetone to further wipe the surface to remove fine dust generated during polishing; and using a brush or fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0023] In one embodiment of the present invention, rinsing and wiping include: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0024] In one embodiment of the invention, high-pressure water gun rinsing includes: thoroughly rinsing the heater with a high-pressure water gun to ensure that all surfaces and crevices are cleaned. The high-pressure water gun pressure is 1500-2500 PSI, and the time is 2-3 minutes.

[0025] In one embodiment of the present invention, the pure water soaking and lifting includes: placing the heater in a pure water tank and lifting it up and down 3 times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0026] In one embodiment of the present invention, the continuous overflow includes: keeping the heater in the pure water tank, continuously introducing pure water to cause the pure water in the pure water tank to overflow, and maintaining the overflow state for 1-3 hours to thoroughly remove residual cleaning agent and contaminants.

[0027] In one embodiment of the present invention, ultrasonic cleaning includes cleaning the heater using an ultrasonic cleaner for 2-3 minutes at a frequency of 40-50 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0028] In one embodiment of the present invention, the drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 45-55°C for 8-10 hours.

[0029] The beneficial effects of this invention are:

[0030] (1) This invention uses a multi-step composite cleaning solution for chemical cleaning, combined with improved physical cleaning, which can simultaneously remove inorganic deposits, organic residues, and microparticle contaminants from the heater surface. The surface roughness after cleaning is ≤0.5μm, meeting the original factory standard and effectively improving the service life of the components.

[0031] (2) By chemically cleaning the heater using composite cleaning solution I and composite cleaning solution II respectively, the synergistic effect of composite cleaning solution I not only achieves preliminary cleaning of the heater surface, but more importantly, through the complexation of EDTA and potassium sodium tartrate, and the oxidation of hydrogen peroxide, a protective cleaning environment for the metal is jointly constructed. Based on this, combining it with the deep cleaning of composite cleaning solution II can further improve cleaning stability, enhance the protective effect on the metal, and increase cleaning efficiency.

[0032] (3) The synergistic effect among the components of the cleaning solution formulation in this invention, as well as the protective mechanism of the composite cleaning solution I on the metal, jointly ensure the high efficiency, safety, and effective protection of the metal during the cleaning process. This synergistic effect not only improves the cleaning effect but also extends the service life of the heater, providing a strong guarantee for the quality and reliability of semiconductor products.

[0033] (4) The method of the present invention can not only effectively clean the dirt on the surface of the heater, but also effectively clean the contaminants in the holes of the heater. After cleaning, the pore size is significantly increased to 2.1 to 2.8 nm, and the average pore size can reach more than 2.2 nm. The pore size change rate of the heater before and after cleaning is 40 to 62%. Compared with the heater without contaminants, the pore size change rate of the heater after cleaning is 0.07 to 0.3%, and the roughness is ≤1 μm.

[0034] (5) The present invention first uses chemical cleaning to pre-clean the heater. Chemical cleaning can effectively etch the contaminants on the surface of the heater. Combined with physical cleaning, it can more effectively remove residual dirt or particles, thereby improving the cleaning effect and making the surface clean and bright. Attached Figure Description

[0035] Figure 1 The images show photos of the heater before (a) and after (b) cleaning (front view) and before (c) and after (d) cleaning (back view) of Example 1.

[0036] Figure 2 The images show the heater before (a) and after (b) cleaning (front view) and before (c) and after (d) cleaning (back view) of Example 3.

[0037] Figure 3The images show the heater before (a) and after (b) cleaning (front view) and before (c) and after (d) cleaning (back view) of Example 5.

[0038] Figure 4 The heater's appearance (partial magnification) is shown in Example 1 before cleaning (a), before physical cleaning (b), and after physical cleaning (c).

[0039] Figure 5 The heater's appearance (partial magnification) is shown in Example 3 before cleaning (a), before physical cleaning (b), and after physical cleaning (c).

[0040] Figure 6 The appearance of the heater in Example 5 is shown in magnified form (partial magnification) before cleaning (a), before physical cleaning (b), and after physical cleaning (c).

[0041] Figure 7 Microscopic images of the heater in Example 1 before (a) and after (b) physical cleaning;

[0042] Figure 8 Microscopic images of the heater in Example 3 before (a) and after (b) physical cleaning;

[0043] Figure 9 Microscopic images of the heater in Example 5 before (a) and after (b) physical cleaning;

[0044] Figure 10 Photograph of the heater after cleaning (reverse side) for Comparative Example 2;

[0045] Figure 11 Photograph of the heater after cleaning (reverse side) for Comparative Example 1;

[0046] Figure 12 Photograph of the heater after cleaning (reverse side) for Comparative Example 18;

[0047] Figure 13 Photograph of the heater after cleaning (reverse side) for Comparative Example 10;

[0048] Figure 14 Photograph of the heater after cleaning (reverse side) for Comparative Example 11;

[0049] Figure 15 Photograph of the heater after cleaning (reverse side) for Comparative Example 19;

[0050] Figure 16 These are micrographs of the pores before (a) and after (b) cleaning in Example 1;

[0051] Figure 17 Micrographs of the pores before (a) and after (b) cleaning, for Comparative Example 10;

[0052] Figure 18 Micrographs of the pores before (a) and after (b) cleaning, for Comparative Example 11;

[0053] Figure 19 Micrograph of the pores after cleaning, for Comparative Example 2;

[0054] Figure 20 The diagram shows the pore size distribution before and after cleaning in Example 1. (a) Before cleaning; (b) After cleaning.

[0055] Figure 21 The image shows the surface characterization of the heater before cleaning in Example 1, where magnifications from left to right are 40x, 80x, 120x, and 160x.

[0056] Figure 22 The image shows the surface characterization of the heater after cleaning in Example 1, with magnification values ​​from left to right as 40x, 80x, 120x, and 160x. Detailed Implementation

[0057] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0059] Unless otherwise specified, the experimental methods used in the following examples are conventional methods, and the experimental materials used in the following examples are all purchased from commercial channels.

[0060] Example 1

[0061] A method for cleaning a heater for semiconductor components includes the following steps:

[0062] S1-1, Pre-cleaning: The heater is pre-cleaned using composite cleaning solution I. The heater is immersed in composite cleaning solution I at 35°C for 20 minutes, during which the cleaning solution is stirred using magnetic stirring.

[0063] S1-2, Deep Cleaning: The heater is deeply cleaned using composite cleaning fluid II. The deep cleaning is performed using high-pressure air mist cleaning. The pressure of high-pressure air mist cleaning is 1MPa, the temperature is 50℃, the time is 10s per cleaning, and the gas is nitrogen.

[0064] S2. Use a high-pressure water gun to flush the heater;

[0065] S3. Repeat S1-S2 10 times;

[0066] S4. Physical cleaning of the heater: The physical cleaning steps include: preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0067] The composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol; the composite cleaning solution I contains 2wt% hydrogen peroxide, 1wt% EDTA, 0.5wt% potassium sodium tartrate, and 0.2wt% polyethylene glycol.

[0068] Composite Cleaning Solution II comprises deionized water, sodium lauryl sulfate, sulfamic acid, sodium silicate, and propylene glycol. Specifically, it contains 1.5 wt% sodium lauryl sulfate, 0.5 wt% sulfamic acid, 0.3 wt% sodium silicate, and 0.5 wt% propylene glycol.

[0069] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0070] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0071] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0072] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0073] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0074] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0075] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0076] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0077] Example 2

[0078] A method for cleaning a heater for semiconductor components includes the following steps:

[0079] S1-1, Pre-cleaning: The heater is pre-cleaned using composite cleaning solution I. The heater is immersed in composite cleaning solution I at 35°C for 20 minutes, during which the cleaning solution is stirred using magnetic stirring.

[0080] S1-2, Deep Cleaning: The heater is deeply cleaned using composite cleaning fluid II. The deep cleaning is performed using high-pressure air mist cleaning. The pressure of high-pressure air mist cleaning is 3MPa, the temperature is 60℃, the time is 20s per cleaning, and the gas is nitrogen.

[0081] S2. Use a high-pressure water gun to flush the heater;

[0082] S3. Repeat S1-S2 10 times;

[0083] S4. Physical cleaning of the heater: The physical cleaning steps include preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0084] The composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol; the composite cleaning solution I contains 3wt% hydrogen peroxide, 2wt% EDTA, 1wt% potassium sodium tartrate, and 0.5wt% polyethylene glycol.

[0085] Composite Cleaning Solution II includes deionized water, sodium dodecyl sulfate, aminosulfonic acid, sodium silicate, and propylene glycol; Composite Cleaning Solution II includes 1.5 wt% sodium dodecyl sulfate, 0.5 wt% aminosulfonic acid, 0.3 wt% sodium silicate, and 0.5 wt% propylene glycol.

[0086] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0087] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0088] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0089] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0090] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0091] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0092] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0093] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0094] Example 3

[0095] A method for cleaning a heater for semiconductor components includes the following steps:

[0096] S1-1, Pre-cleaning: The heater is pre-cleaned using composite cleaning solution I. The heater is immersed in composite cleaning solution I at 35°C for 20 minutes, during which the cleaning solution is stirred using magnetic stirring.

[0097] S1-2, Deep Cleaning: The heater is deeply cleaned using composite cleaning fluid II. The deep cleaning is performed using high-pressure air mist cleaning. The pressure of high-pressure air mist cleaning is 2MPa, the temperature is 60℃, the time is 20s per cleaning, and the gas is nitrogen.

[0098] S2. Use a high-pressure water gun to flush the heater;

[0099] S3. Repeat S1-S2 10 times;

[0100] S4. Physical cleaning of the heater: The physical cleaning steps include preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0101] The composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol; the composite cleaning solution I contains 2wt% hydrogen peroxide, 1wt% EDTA, 0.5wt% potassium sodium tartrate, and 0.2wt% polyethylene glycol.

[0102] Composite Cleaning Solution II includes deionized water, sodium dodecyl sulfate, aminosulfonic acid, sodium silicate, and propylene glycol; Composite Cleaning Solution II includes 2.5 wt% sodium dodecyl sulfate, 0.8 wt% aminosulfonic acid, 0.5 wt% sodium silicate, and 0.8 wt% propylene glycol.

[0103] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0104] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0105] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0106] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0107] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0108] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0109] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0110] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0111] Example 4

[0112] A method for cleaning a heater for semiconductor components includes the following steps:

[0113] S1-1, Pre-cleaning: The heater is pre-cleaned using composite cleaning solution I. The heater is immersed in composite cleaning solution I at 35°C for 20 minutes, during which the cleaning solution is stirred using magnetic stirring.

[0114] S1-2, Deep Cleaning: The heater is deeply cleaned using composite cleaning fluid II. The deep cleaning is performed using high-pressure air mist cleaning. The pressure of high-pressure air mist cleaning is 2MPa, the temperature is 60℃, the time is 20s per cleaning, and the gas is nitrogen.

[0115] S2. Use a high-pressure water gun to flush the heater;

[0116] S3. Repeat S1-S2 10 times;

[0117] S4. Physical cleaning of the heater: The physical cleaning steps include preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0118] The composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol; the composite cleaning solution I contains 3wt% hydrogen peroxide, 2wt% EDTA, 1wt% potassium sodium tartrate, and 0.5wt% polyethylene glycol.

[0119] Composite Cleaning Solution II includes deionized water, sodium dodecyl sulfate, aminosulfonic acid, sodium silicate, and propylene glycol; Composite Cleaning Solution II includes 2.5 wt% sodium dodecyl sulfate, 0.8 wt% aminosulfonic acid, 0.5 wt% sodium silicate, and 0.8 wt% propylene glycol.

[0120] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0121] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0122] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0123] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0124] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0125] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0126] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0127] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0128] Example 5

[0129] A method for cleaning a heater for semiconductor components includes the following steps:

[0130] S1-1, Pre-cleaning: The heater is pre-cleaned using composite cleaning solution I. The heater is immersed in composite cleaning solution I at 45°C for 30 minutes, during which the cleaning solution is stirred using magnetic stirring.

[0131] S1-2, Deep Cleaning: The heater is deeply cleaned using composite cleaning fluid II. The deep cleaning is performed using high-pressure air mist cleaning. The pressure of high-pressure air mist cleaning is 2MPa, the temperature is 60℃, the time is 20s per cleaning, and the gas is nitrogen.

[0132] S2. Use a high-pressure water gun to flush the heater;

[0133] S3. Repeat S1-S2 10 times;

[0134] S4. Physical cleaning of the heater: The physical cleaning steps include preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0135] The composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol; the composite cleaning solution I contains 3wt% hydrogen peroxide, 2wt% EDTA, 1wt% potassium sodium tartrate, and 0.5wt% polyethylene glycol.

[0136] Composite Cleaning Solution II includes deionized water, sodium dodecyl sulfate, aminosulfonic acid, sodium silicate, and propylene glycol; Composite Cleaning Solution II includes 2.5 wt% sodium dodecyl sulfate, 0.8 wt% aminosulfonic acid, 0.5 wt% sodium silicate, and 0.8 wt% propylene glycol.

[0137] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0138] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0139] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0140] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0141] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0142] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0143] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0144] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0145] Example 6

[0146] A method for cleaning a heater for semiconductor components includes the following steps:

[0147] S1-1, Pre-cleaning: The heater is pre-cleaned using composite cleaning solution I. The heater is immersed in composite cleaning solution I at 45°C for 30 minutes, during which the cleaning solution is stirred using magnetic stirring.

[0148] S1-2, Deep Cleaning: The heater is deep cleaned using composite cleaning fluid II. The deep cleaning is performed using high-pressure air mist cleaning. The pressure of high-pressure air mist cleaning is 3MPa, the temperature is 70℃, the time is 15s per cleaning, and the gas is nitrogen.

[0149] S2. Use a high-pressure water gun to flush the heater;

[0150] S3. Repeat S1-S2 10 times;

[0151] S4. Physical cleaning of the heater: The physical cleaning steps include preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0152] The composite cleaning solution I includes deionized water, hydrogen peroxide, EDTA, potassium sodium tartrate, and polyethylene glycol; the composite cleaning solution I contains 3wt% hydrogen peroxide, 2wt% EDTA, 1wt% potassium sodium tartrate, and 0.5wt% polyethylene glycol.

[0153] Composite Cleaning Solution II includes deionized water, sodium dodecyl sulfate, aminosulfonic acid, sodium silicate, and propylene glycol; Composite Cleaning Solution II includes 2.5 wt% sodium dodecyl sulfate, 0.8 wt% aminosulfonic acid, 0.5 wt% sodium silicate, and 0.8 wt% propylene glycol.

[0154] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0155] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0156] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0157] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0158] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0159] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0160] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0161] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0162] Comparative Example 1: Chemical cleaning using conventional methods

[0163] A method for cleaning a heater for semiconductor components includes the following steps:

[0164] S1. Chemical cleaning of the heater: Immerse the heater in a cleaning solution at room temperature for 50 seconds, and stir the cleaning solution with magnetic stirring during the immersion. The chemical cleaning uses a mixed solution of 30wt% hydrofluoric acid and 30wt% nitric acid.

[0165] S2. Use a high-pressure water gun to flush the heater;

[0166] S3. Repeat S1-S2 10 times;

[0167] S4. Physical cleaning of the heater: The physical cleaning process includes preliminary polishing, fine polishing, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying.

[0168] The initial polishing process includes: using 400# sandpaper to evenly polish the surface of the heater to remove rough deposits and etching marks; and using an 800# scouring pad to initially polish the non-use surfaces of the heater to remove surface dirt. Maintain even pressure during polishing to avoid excessive wear in certain areas.

[0169] The fine polishing process includes: using a 600# scouring pad to evenly polish the surface of the heater until it is smooth and free of obvious scratches; using a lint-free cloth dampened with a small amount of anhydrous ethanol to further wipe the surface and remove the fine dust generated during polishing; and using a brush and fine sanding stick to treat the non-use surfaces and gaps of the heater, and to finely polish the gaps and corners to ensure that nothing is missed.

[0170] The rinsing and wiping process includes: rinsing the heater surface with pure water to remove debris and dirt generated during polishing, and wiping the entire heater surface with a clean sponge dipped in pure water to ensure no residue remains.

[0171] The high-pressure water jet rinsing process includes thoroughly rinsing the heater with a high-pressure water jet to ensure all surfaces and crevices are cleaned. The high-pressure water jet pressure is 1500 PSI, and the rinsing time is 2 minutes.

[0172] The pure water soaking and lifting process includes: placing the heater in a pure water tank and lifting it up and down three times to remove contaminants from the hole and hard-to-reach areas; while lifting in the pure water tank, gently shaking the heater to promote the discharge of contaminants from the hole.

[0173] The continuous overflow includes: keeping the heater in the pure water tank and continuously supplying pure water to cause the pure water in the tank to overflow, maintaining the overflow state for 2 hours to thoroughly remove residual cleaning agents and contaminants.

[0174] The ultrasonic cleaning process includes cleaning the heater using an ultrasonic cleaner for 3 minutes at a frequency of 40 kHz. This step is performed in a Class 100 cleanroom to ensure the cleanliness of the cleaning environment.

[0175] The drying process includes: using high-purity nitrogen to dry the heater to ensure that there are no water droplets remaining on the surface; and placing the heater in a vacuum oven for heating and drying at a temperature of 55°C for 10 hours.

[0176] Comparative Example 2

[0177] The difference between Comparative Example 2 and Example 1 is that the composite cleaning solution I does not contain hydrogen peroxide, EDTA, or polyethylene glycol.

[0178] Comparative Example 3

[0179] The difference between Comparative Example 3 and Example 1 is that the composite cleaning solution I does not contain hydrogen peroxide.

[0180] Comparative Example 4

[0181] The difference between Comparative Example 4 and Example 1 is that the composite cleaning solution I does not contain EDTA.

[0182] Comparative Example 5

[0183] The difference between Comparative Example 5 and Example 1 is that the composite cleaning solution I does not contain polyethylene glycol.

[0184] Comparative Example 6

[0185] The difference between Comparative Example 6 and Example 1 is that the composite cleaning solution I does not contain potassium sodium tartrate.

[0186] Comparative Example 7

[0187] The difference between Comparative Example 7 and Example 1 is that the composite cleaning solution I does not contain hydrogen peroxide or EDTA.

[0188] Comparative Example 8

[0189] The difference between Comparative Example 8 and Example 1 is that the composite cleaning solution I does not contain hydrogen peroxide or polyethylene glycol.

[0190] Comparative Example 9

[0191] The difference between Comparative Example 9 and Example 1 is that the composite cleaning solution I does not contain EDTA or polyethylene glycol.

[0192] Comparative Example 10

[0193] The difference between Comparative Example 10 and Example 1 is that the composite cleaning solution I was replaced with a mixed solution of 30 wt% hydrofluoric acid and 30 wt% nitric acid.

[0194] Comparative Example 11

[0195] The difference between Comparative Example 11 and Example 1 is that step S1-1 is not performed.

[0196] Comparative Example 12

[0197] The difference between Comparative Example 12 and Example 1 is that Composite Cleaning Solution II does not contain sodium dodecyl sulfate.

[0198] Comparative Example 13

[0199] The difference between Comparative Example 13 and Example 1 is that Composite Cleaning Solution II does not contain aminosulfonic acid.

[0200] Comparative Example 14

[0201] The difference between Comparative Example 14 and Example 1 is that Composite Cleaning Solution II does not contain sodium silicate.

[0202] Comparative Example 15

[0203] The difference between Comparative Example 15 and Example 1 is that Composite Cleaning Solution II does not contain sodium dodecyl sulfate or aminosulfonic acid.

[0204] Comparative Example 16

[0205] The difference between Comparative Example 16 and Example 1 is that Composite Cleaning Solution II does not contain sodium dodecyl sulfate or sodium silicate.

[0206] Comparative Example 17

[0207] The difference between Comparative Example 17 and Example 1 is that Composite Cleaning Solution II does not contain sulfamic acid or sodium silicate.

[0208] Comparative Example 18

[0209] Comparative Example 18 does not perform steps S1-2.

[0210] Comparative Example 19

[0211] The difference between Comparative Example 19 and Example 1 is that the order of steps S1-1 and S1-2 is reversed.

[0212] The heaters obtained in the above embodiments and comparative examples were tested: weight before and after cleaning, pore size measurement, and roughness measurement. The results are as follows:

[0213] Table 1. Changes in pore size before and after cleaning in Examples 1-6 and Comparative Examples 1-19.

[0214]

[0215] Table 2 Sample weight test results

[0216] Example 1 1045960-22-35-019186 14.775 14.761 0.014 Comparative Example 2 1045960-22-38-020843 14.718 14.709 0.009 Comparative Example 1 1045960-22-41-021460 14.733 14.726 0.007 Comparative Example 18 1045960-22-38-020823 14.753 14.748 0.005 Comparative Example 10 1045960-22-36-015427 14.726 14.712 0.014 Comparative Example 6 1045960-22-37-020518 14.742 14.737 0.005 Comparative Example 11 1045960-22-35-016820 14.735 14.731 0.004 Comparative Example 19 1045960-22-35-020530 14.751 14.745 0.006

[0217] Table 3. Results of sample surface roughness test

[0218]

[0219] In Composite Cleaning Solution I, deionized water serves as the base solvent, providing a favorable dissolution environment for the other components and resulting in a more homogeneous and stable cleaning solution system. Hydrogen peroxide, EDTA, and sodium potassium tartrate work synergistically. Hydrogen peroxide acts as an oxidant to decompose organic matter, while EDTA and sodium potassium tartrate, by complexing metal ions, prevent the metal from being oxidized or forming harmful precipitates during cleaning, thus achieving effective protection of the metal. Polyethylene glycol, as a surfactant, not only enhances the wettability and penetrability of the cleaning solution, allowing it to penetrate more effectively into the tiny gaps on the heater surface, but also works synergistically with other components to improve the stability and overall performance of the cleaning solution. In Composite Cleaning Solution II, deionized water again serves as the base solvent, providing a suitable dissolution environment for the other components. Sodium dodecyl sulfate, as a surfactant, works synergistically with sulfamic acid; the former improves the foaming properties and detergency of the cleaning solution, while the latter focuses on removing oxides and rust from the metal surface. Sodium silicate, as a corrosion inhibitor, forms a protective film on the metal surface and works synergistically with propylene glycol, not only enhancing the stability of the cleaning solution but also further improving the protective effect on the metal. The moisturizing properties of propylene glycol also help prevent the cleaning solution from evaporating too quickly, thereby extending the cleaning time and improving cleaning efficiency. In step 1, the synergistic effect of composite cleaning solution I not only achieves preliminary cleaning of the heater surface, but more importantly, through the complexation of EDTA and sodium potassium tartrate, and the oxidation of hydrogen peroxide, it jointly constructs a cleaning environment that protects the metal. This protective effect is mainly reflected in the following aspects: Preventing metal oxidation: The oxidation of hydrogen peroxide can remove organic matter and grease from the metal surface, reducing the risk of metal oxidation. Complexing metal ions: EDTA and sodium potassium tartrate, by complexing metal ions, prevent metal ions from forming precipitates or reacting with other substances during the cleaning process, thereby avoiding corrosion and damage to the metal surface. Enhancing the stability of the cleaning solution: The presence of surfactants such as polyethylene glycol makes the cleaning solution more stable, reducing the risk of potential damage to the metal due to the instability of the cleaning solution. In summary, the synergistic effect between the components in the cleaning solution formulation and the metal protection mechanism of the cleaning solution in step 1 jointly ensure the high efficiency, safety, and effective protection of the metal in the cleaning process. This synergistic effect not only improves the cleaning effect but also extends the service life of the heater, providing a strong guarantee for the quality and reliability of semiconductor products.

[0220] Combining Table 1 and Figures 1-3Experimental data show that before cleaning, contaminants deposited in the pores of the heater, significantly reducing the pore size to between 0.97 and 1.0 mm. After cleaning using the method of this invention, the pore size increased by 0.05 to 0.08 mm, with an average pore size difference of 0.06 to 0.07 mm. Compared to before contaminant deposition, the pore size changed by 0.002 to 0.01 mm, a change rate of 0.07% to 0.3%. This indicates that the method of this invention can effectively remove dirt from the heater surface and contaminants in the heater's pores without damaging the heater substrate. Furthermore, removing certain components of the cleaning agent based on this invention significantly worsened the cleaning effect, with the average pore size difference before and after cleaning less than 0.05 mm. This demonstrates that only when the cleaning process of this invention is combined with a special cleaning agent can a better cleaning effect be obtained.

[0221] Tables 2 and 3 show the changes in the mass and surface roughness of the heater before and after cleaning in Example 1 and the comparative example, respectively. The data in the tables show that the method of the present invention can effectively clean the contaminants on the surface of the heater. The large change in mass before and after cleaning indicates that more contaminants have been removed. The surface roughness after cleaning reflects the cleanliness of the heater surface. Low roughness indicates that the surface is cleaned relatively well. The data in the tables also show that the heater in the examples was cleaned relatively well.

[0222] As can be seen from the data shown in Tables 1-3, the cleaning effect of the heater in Comparative Example 10 is similar to that of the embodiment of the present invention. However, the cleaning solution in Comparative Example 10 contains strong acids such as hydrofluoric acid and nitric acid. Although strong acids can more effectively clean the dirt on the surface of the heater, on the one hand, hydrofluoric acid is highly corrosive and poses a risk of corroding the heater, and also requires high skill from the operators. On the other hand, the use of hydrofluoric acid is not conducive to subsequent wastewater treatment.

[0223] Figures 4-9 The embodiments provide images showing the appearance and microscopic effects of the heater surface before and after physical cleaning. As can be seen from the images, chemical cleaning can effectively etch away contaminants on the heater surface. However, without physical cleaning, chemical treatment alone cannot completely remove surface dirt, leaving a lot of dirt or particles behind, resulting in a hazy appearance on the heater surface. Combining physical cleaning can more effectively remove residual dirt or particles, thereby improving the cleaning effect and making the surface clean and bright.

[0224] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

[0225] The present invention and its embodiments have been described above. This description is not restrictive, and the accompanying drawings are only one embodiment of the present invention. The actual application is not limited to this. In conclusion, if those skilled in the art are inspired by this description and design similar methods and embodiments without departing from the spirit of the present invention, they should all fall within the protection scope of the present invention.

Claims

1. A method for cleaning a heater for semiconductor components, characterized in that, The etching products formed on the heater surface during the CVD process include metal oxides, silicides, and carbon deposits, and include the following steps: S1. Clean the heater with a cleaning solution; S2. Use a high-pressure water gun to flush the heater; S3. Repeat S1-S2, 8-15 times; S4. Perform preliminary grinding, fine grinding, rinsing and wiping, high-pressure water gun rinsing, pure water immersion and lifting, continuous overflow, ultrasonic cleaning, and drying on the heater in sequence. The surface roughness of the heater after cleaning is no greater than 1 μm. The pore size increase rate before and after cleaning is 5-8.5%, and compared to a heater without contaminants, the pore size change rate after cleaning is 0.07-0.3%. Specifically, S1 involves cleaning the heater with a cleaning solution, including S1-1, immersing the heater in a composite cleaning solution I at 35-45℃ for 20-30 minutes, and S1-2, performing deep cleaning of the heater using composite cleaning solution II, which employs high-pressure aerosol cleaning. The first cleaning solution contains 2-3 wt% hydrogen peroxide, 1-2 wt% EDTA, 0.5-1 wt% sodium potassium tartrate, and 0.2-0.5 wt% polyethylene glycol. The second cleaning solution contains 1.5-2.5 wt% sodium dodecyl sulfate, 0.5-0.8 wt% sulfamic acid, 0.3-0.5 wt% sodium silicate, and 0.5-0.8 wt% propylene glycol. Through the complexation of EDTA and sodium potassium tartrate, and the oxidation of hydrogen peroxide, a cleaning environment that protects the metal is constructed.

2. The semiconductor component heater cleaning method according to claim 1, characterized in that, The high-pressure aerosol cleaning process involves a pressure of 1-5 MPa, a temperature of 50-80°C, a cleaning time of 10-60 seconds per cleaning cycle, and uses nitrogen gas.

3. The semiconductor component heater cleaning method according to claim 1, characterized in that, The high-pressure water gun rinsing includes: using a high-pressure water gun to thoroughly rinse the heater, with a pressure of 1500-2500 PSI and a time of 2-3 minutes.

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