Method of cutting a silicon rod and cutting system

Abstract

The embodiment of the application relates to the field of silicon rod cutting, and provides a cutting method and a cutting system for a silicon rod. The method comprises the following steps: after cutting a silicon rod into silicon wafers and before lifting the wafers, controlling a cutting line to move at a first preset speed, and controlling a spraying mechanism to be turned on to spray lubricating liquid to the cutting line; controlling the spraying mechanism to be turned off and starting to perform a lifting operation, controlling the cutting line to move at a second preset speed during the lifting process, the second preset speed being greater than the first preset speed; acquiring an actual lifting torque and a maximum line bow value during the lifting process, the actual lifting torque being a torque that moves the silicon wafers away from the cutting line during the lifting process, and the maximum line bow value being a maximum deformation of the cutting line in the moving direction of the silicon wafers; and controlling a working state of the spraying mechanism during the lifting process according to the maximum line bow value and the actual lifting torque. The application is at least beneficial to improving the problem of cutting line sticking of the silicon rod.

Description

Technical Field

[0001] This application relates to the field of silicon rod cutting, and in particular to a method and system for cutting silicon rods. Background Technology

[0002] Silicon rod cutting is a crucial step in solar energy production. During the rod lifting process, after the silicon rod is cut through, one or more cutting wires often become entangled in the wire mesh, getting caught on the plastic sheet, adhesive layer, or silicon wafer. This entanglement can easily damage the silicon wafer and break the cutting wires, resulting in wire loss. Furthermore, operators must re-lay the wire mesh, wasting time and reducing production capacity. Summary of the Invention

[0003] This application provides a method and system for cutting silicon rods, which at least helps to improve the problem of wire entanglement during silicon rod cutting.

[0004] According to some embodiments of this application, one aspect of this application provides a method for cutting a silicon rod, comprising: after cutting the silicon rod into silicon wafers and before material lifting, controlling the cutting wire to travel at a first preset speed and controlling a spraying mechanism to open to spray lubricant onto the cutting wire; controlling the spraying mechanism to close and starting a material lifting operation, during the material lifting process, controlling the cutting wire to travel at a second preset speed, the second preset speed being greater than the first preset speed; acquiring the actual material lifting torque and the maximum arc value during the material lifting process, the actual material lifting torque being the torsional torque that causes the silicon wafer to move away from the cutting wire during the material lifting process, and the maximum arc value being the maximum deformation of the cutting wire in the direction of movement of the silicon wafer; and controlling the working state of the spraying mechanism during the material lifting process based on the maximum arc value and the actual material lifting torque.

[0005] In some embodiments, controlling the working state of the spraying mechanism during the material lifting process based on the maximum arc value and the actual lifting torque includes: determining the friction coefficient of the cutting wire based on the maximum arc value and the actual lifting torque; controlling the spraying mechanism to open to spray the lubricant onto the cutting wire when the friction coefficient is greater than a first threshold and less than or equal to a second threshold; at least stopping the material lifting operation and controlling the spraying mechanism to open to spray the lubricant onto the cutting wire when the friction coefficient is greater than the second threshold; and controlling the spraying mechanism to close when the friction coefficient is less than or equal to a third threshold, wherein the third threshold is less than or equal to the first threshold.

[0006] In some embodiments, when the coefficient of friction is greater than the second threshold, at least the material lifting operation is stopped and the spraying mechanism is turned on to spray the lubricant onto the cutting line, including: when the coefficient of friction is greater than the second threshold, stopping the material lifting operation, controlling the cutting line to travel at a third preset speed and turning on the spraying mechanism so that the spraying mechanism sprays the lubricant onto the inlet of the cutting line, the third preset speed being less than the second preset speed; when the opening time of the spraying mechanism reaches a first time, controlling the spraying mechanism to close, continuing the material lifting operation and controlling the cutting line to travel at the second preset speed.

[0007] In some embodiments, controlling the spraying mechanism to close and start the material lifting operation includes: when the cutting line travels at the first preset speed for a second duration, controlling the spraying mechanism to close and start the material lifting operation, where the second duration is greater than or equal to the first duration, controlling the cutting line to travel at the first preset speed, and controlling the spraying mechanism to open to spray lubricant onto the cutting line, which includes: controlling the cutting line to travel at the first preset speed and opening the spraying mechanism to control the spraying mechanism to spray the lubricant onto the junction of the cutting line and the carrier plate, wherein the silicon rod is bonded to the carrier plate by an adhesive layer.

[0008] In some embodiments, determining the friction coefficient based on the maximum arc length and the actual lifting torque includes one of the following: determining the friction coefficient as the quotient of the maximum arc length and the actual lifting torque multiplied by a preset factor; inputting the maximum arc length and the actual lifting torque into a preset model so that the preset model outputs the friction coefficient, wherein the preset model is trained using multiple sets of data through machine learning, and each set of data includes: historical maximum arc length, historical lifting torque, and historical friction coefficient; determining the friction coefficient based on the maximum arc length, the actual lifting torque, and a preset relationship, wherein the preset relationship characterizes the correspondence between the maximum arc length, the actual lifting torque, and the friction coefficient.

[0009] In some embodiments, obtaining the actual lifting torque and maximum bow value during the lifting process includes: acquiring image information of the cutting line; determining multiple deformations of the cutting line in the moving direction of the silicon wafer based on the image information; determining the maximum value among the multiple deformations as the maximum bow value; and reading the torque value of the torque sensor on the lifting drive shaft to obtain the actual lifting torque.

[0010] In some embodiments, the silicon rod cutting method further includes: obtaining the maximum arc value during the cutting process of the silicon rod; and if the maximum arc value is greater than a fourth threshold, performing at least one of the following: controlling the slurry mechanism to open to spray cutting fluid onto the cutting line and reducing the cutting torque.

[0011] In some embodiments, the first preset speed is 2 to 3 m / s.

[0012] In some embodiments, the first duration is greater than or equal to 1 minute, and the second duration is greater than or equal to 2 minutes.

[0013] According to some embodiments of this application, another aspect of this application provides a silicon rod cutting system, including: a silicon rod; the silicon rod cutting device includes a cutting wire, a spray mechanism, one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for performing any of the silicon rod cutting methods described above.

[0014] The technical solution provided in this application has at least the following advantages: Before lifting the silicon rod after it has been cut through, the cutting wire is first controlled to travel at a relatively small first preset angle, while the spraying mechanism is controlled to spray lubricant onto the cutting wire; then, the spraying of lubricant onto the cutting wire is stopped, and the lifting operation begins, during which the cutting wire is controlled to travel at a relatively large second preset speed; finally, the actual lifting torque and maximum wire bow value of the cutting wire during the lifting process are obtained, and the working state of the spraying mechanism during the lifting process is controlled based on these two values. This application sprays lubricant onto the cutting wire before lifting and controls the cutting wire to move slowly, which can carry the lubricant into the carrier plate through the cutting wire, reducing the friction between the cutting wire and the carrier plate and improving the wire snagging problem; during the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting wire, the spraying mechanism is controlled to adjust the friction between the cutting wire and the carrier plate, adhesive layer, or wafer during the lifting process, which can further reduce the risk of the cutting wire getting snagged during the lifting process. In addition, controlling the rapid movement of the cutting line during the material handling process can reduce adhesion between the cutting line and the substrate, adhesive layer, or wafer, which is beneficial for separating the cutting line from the silicon wafer and ensuring the smooth execution of the material handling operation. Attached Figure Description

[0015] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the drawings in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this application or in the conventional art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A hardware structure block diagram of a mobile terminal for performing a silicon rod cutting method according to an embodiment of this application is shown;

[0017] Figure 2 A schematic flowchart of a method for cutting a silicon rod according to an embodiment of this application is shown;

[0018] Figure 3 A schematic diagram of a spray mechanism according to an embodiment of this application is shown;

[0019] Figure 4 A front view schematic diagram of the connection structure between a spraying mechanism and a mortar mechanism provided according to an embodiment of this application is shown;

[0020] Figure 5 A rear view of the connection structure of a spraying mechanism and a mortar mechanism provided according to an embodiment of this application is shown.

[0021] The accompanying drawings include the following reference numerals:

[0022] 102. Processor; 104. Memory; 106. Transmission device; 108. Input / output device; 10. Spray pipe; 11. Liquid inlet pipe; 12. Fixing component; 13. Limiting component; 14. Nozzle; 15. Mortar mechanism; 16. Mortar pipe. Detailed Implementation

[0023] As is known from the background art, after silicon ingots are cut into silicon wafers, a lifting process is required, which involves separating the silicon wafers from the wire mesh. During the lifting process, the wire mesh can easily get caught on the carrier substrate, adhesive layer, or wafer, causing wire snagging, which can lead to problems such as silicon wafer damage or wire mesh breakage. To solve the problem of silicon wafer damage or wire mesh breakage caused by wire snagging, embodiments of this application provide a silicon ingot cutting method and cutting system.

[0024] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0025] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0026] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. In addition, the character " / " in this document generally indicates that the related objects before and after it have an "or" relationship.

[0027] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0028] In the description of the embodiments of this application, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0029] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the terms in the embodiments of this application can be understood according to the specific circumstances.

[0030] In the accompanying drawings corresponding to the embodiments of this application, the thickness and area of ​​the layers are enlarged for better understanding and ease of description. When describing a component (such as a layer, film, region, or substrate) on or on the surface of another component, the component may be "directly" located on the surface of the other component, or there may be a third component between the two components. Conversely, when describing a component on the surface of another component, or when another component is formed or disposed on the surface of a component, it indicates that there is no third component between the two components. Furthermore, when describing a component as being "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.

[0031] In the description of the embodiments of this application, when a component "includes" another component, other components are not excluded unless otherwise stated, and other components may be further included. Furthermore, when a component such as a layer, film, region, or plate is referred to as being "on / located" on another component, it can be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or there may be another component present between them. Moreover, when a component such as a layer, film, region, or plate is "directly located" on another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it indicates that no other components are located between them.

[0032] The terminology used in the description of the various embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used in the description of the various embodiments and the appended claims, the term "part" is also intended to include the plural form unless the context clearly indicates otherwise. Components include layers, films, regions, or plates, etc.

[0033] The embodiments of this application will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this application to facilitate a better understanding of the application. However, the technical solutions claimed in this application can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0034] The methods and embodiments provided in this application can be executed on a mobile terminal, computer terminal, or similar computing device. Taking running on a mobile terminal as an example, Figure 1 This is a hardware structure block diagram of a mobile terminal for a silicon rod cutting method according to an embodiment of the present invention. As shown in Figure 1, the mobile terminal may include one or more ( Figure 1Only one is shown in the diagram. A processor 102 (which may include, but is not limited to, a microprocessor MCU or a programmable logic device FPGA, etc.) and a memory 104 for storing data are also shown. The mobile terminal may further include a transmission device 106 for communication functions and an input / output device 108. Those skilled in the art will understand that... Figure 1 The structure shown is for illustrative purposes only and does not limit the structure of the mobile terminal. For example, the mobile terminal may also include components that are larger than... Figure 1 The more or fewer components shown, or having the same Figure 1 The different configurations shown.

[0035] The memory 104 can be used to store computer programs, such as application software programs and modules, like the computer program corresponding to the silicon rod cutting method in this embodiment of the invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, i.e., implementing the method described. The memory 104 may include high-speed random access memory and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some instances, the memory 104 may further include memory remotely located relative to the processor 102, and these remote memories can be connected to the mobile terminal via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof. The transmission device 106 is used to receive or send data via a network. Specific examples of such networks may include wireless networks provided by the mobile terminal's communication provider. In one example, the transmission device 106 includes a Network Interface Controller (NIC), which can be connected to other network devices via a base station to communicate with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0036] This embodiment provides a method for cutting a silicon rod that runs on a mobile terminal, computer terminal, or similar computing device. It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. Also, although a logical order is shown in the flowchart, in some cases, the steps shown or described may be executed in a different order than that shown here.

[0037] Figure 2 This is a flowchart of a silicon rod cutting method according to an embodiment of this application. Figure 2 As shown, the method includes the following steps:

[0038] Step S201: After the silicon rod is cut into silicon wafers and before the material is lifted, the cutting line is controlled to run at a first preset speed, and the spraying mechanism is controlled to open to spray lubricant onto the cutting line.

[0039] For example, during the silicon ingot dicing process, the upper surface of the silicon ingot is bonded to the lower surface of the carrier plate with an adhesive layer. The dicing wire cuts the silicon ingot from bottom to top until it penetrates the carrier plate, cutting through the silicon ingot and forming multiple silicon wafers. Material lifting involves lifting the carrier plate, causing it to carry the silicon wafers and detach them from the wire mesh. While the dicing wire travels at a first preset speed, lubricant is sprayed onto the dicing wire, causing it to carry the lubricant into the carrier plate. The dicing wire, traveling at the first preset speed, reciprocates in a predetermined direction perpendicular to the direction of movement of the silicon wafers. For example, when the direction of movement of the silicon wafers is from bottom to top, the predetermined direction is horizontal.

[0040] Step S202: Control the spraying mechanism to close and start the material lifting operation. During the material lifting process, control the cutting line to move at a second preset speed, where the second preset speed is greater than the first preset speed.

[0041] For example, the cutting line traveling at a second preset speed reciprocates along the predetermined direction.

[0042] Step S203: Obtain the actual lifting torque and the maximum arc value during the lifting process. The actual lifting torque is the torsional torque that causes the silicon wafer to move away from the cutting line during the lifting process. The maximum arc value is the maximum deformation of the cutting line in the direction of movement of the silicon wafer.

[0043] Specifically, the torque generated by the lifting mechanism in overcoming various resistances during the process of lifting the cut silicon wafer is the actual lifting torque. During the lifting process, the friction between the cutting wire and the carrier plate, adhesive layer, and silicon wafer causes the cutting wire to deform. The maximum deformation in the direction of silicon wafer movement is the maximum wire bow value.

[0044] Step S204: Control the working state of the spraying mechanism during the material lifting process based on the maximum bow value and the actual lifting torque.

[0045] Specifically, the spraying mechanism operates in two states: open and closed. When the spraying mechanism is open, it sprays lubricating fluid onto the cutting line during the material handling process, allowing the lubricating fluid to be carried into the carrier plate, adhesive layer, and silicon wafer through the cutting line. When the spraying mechanism is closed, no lubricating fluid is sprayed out.

[0046] In the aforementioned embodiment, before lifting the silicon rod after it has been cut through, the cutting wire is first controlled to travel at a relatively small first preset angle, while a spraying mechanism is simultaneously controlled to spray lubricant onto the cutting wire. Then, the spraying of lubricant onto the cutting wire is stopped, and the lifting operation begins. During the lifting process, the cutting wire is controlled to travel at a relatively large second preset speed. Finally, the actual lifting torque and maximum wire bow value of the cutting wire during the lifting process are obtained, and the working state of the spraying mechanism is controlled based on these two values. This application sprays lubricant onto the cutting wire before lifting and controls its slow movement, allowing the lubricant to be carried into the carrier plate by the cutting wire, reducing friction between the cutting wire and the carrier plate and improving the wire snagging problem. During the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting wire, the spraying mechanism is controlled to regulate the friction between the cutting wire and the carrier plate, adhesive layer, or wafer during the lifting process, further reducing the risk of the cutting wire getting snagged during lifting. In addition, controlling the rapid movement of the cutting line during the material handling process can reduce adhesion between the cutting line and the substrate, adhesive layer, or wafer, which is beneficial for separating the cutting line from the silicon wafer and ensuring the smooth execution of the material handling operation.

[0047] In some embodiments, the first preset speed is 2 to 3 m / s. For example, the first preset speed can be 2 m / s, 2.3 m / s, 2.5 m / s, 2.7 m / s, or 3 m / s, etc. This speed range is determined based on the characteristics of the cutting wire and the performance of the lubricant. When the cutting wire travels at this first preset speed, the lubricant carrying capacity of the cutting wire (such as diamond wire) is good, and 70% to 80% of the lubricant on the cutting wire can enter the carrier plate along with the movement of the cutting wire. In some embodiments, the lubricant can be a cutting fluid or other liquids that can provide lubrication.

[0048] For example, controlling the spraying mechanism to turn on to spray lubricant onto the cutting line may include: controlling the spraying mechanism to turn on and spraying the lubricant onto the cutting line at a spray flow rate of 200-300 mL / min.

[0049] According to some embodiments of this application, the actual lifting torque can be obtained by testing a torque sensor installed between the drive motor and the transmission components of the lifting mechanism; alternatively, the actual lifting torque can be estimated based on parameters such as the current or voltage of the drive motor, combined with the motor's characteristic curve and mechanical formulas. For example, since the output torque of the motor is proportional to the current, the actual lifting torque can be calculated using the motor's actual current, rated torque, and rated current. The maximum wire bow value can be obtained by measuring the displacement change of the cutting wire during the wire routing process using a non-contact measuring device.

[0050] In some embodiments, step S204: controlling the working state of the spraying mechanism during the material lifting process based on the maximum bow value and the actual lifting torque includes:

[0051] Step S2041: Determine the friction coefficient of the cutting wire based on the maximum bow value and the actual lifting torque;

[0052] Specifically, the coefficient of friction is a parameter that characterizes the magnitude of the friction between the cutting line and the carrier plate, adhesive layer, or silicon wafer during the material feeding process.

[0053] Step S2042: When the friction coefficient is greater than the first threshold and less than or equal to the second threshold, control the spraying mechanism to open to spray the lubricant onto the cutting line;

[0054] Specifically, if the friction coefficient of the cutting line is greater than the first threshold and not greater than the second threshold during the material feeding process, it indicates that the friction between the cutting line and the carrier plate, adhesive layer or silicon wafer is large and there is a risk of the line getting stuck. At this time, the spraying mechanism is controlled to spray lubricant onto the cutting line, and the lubricant is carried into the carrier plate, adhesive layer or silicon wafer through the path of the cutting line.

[0055] Step S2043: When the friction coefficient is greater than the second threshold, at least stop the material lifting operation and control the spraying mechanism to open to spray the lubricant onto the cutting line;

[0056] Specifically, when the friction coefficient of the cutting line is greater than the second threshold during the material lifting process, it indicates that the friction between the cutting line and the carrier plate, adhesive layer or silicon wafer is greater than in step S2042, and the risk of wire snagging is greater. At this time, the material lifting operation should be stopped, that is, the lifting operation of the carrier plate should be stopped so that the silicon wafer no longer moves.

[0057] Step S2044: When the friction coefficient is less than or equal to the third threshold, control the spray mechanism to close, wherein the third threshold is less than or equal to the first threshold.

[0058] Specifically, when the friction coefficient of the cutting line is determined to be no greater than the third threshold during the material feeding process, it indicates that the friction between the cutting line and the carrier plate, adhesive layer or silicon wafer is small and the risk of wire snagging is small. At this time, lubricant is no longer sprayed onto the cutting line.

[0059] In the aforementioned embodiment, the friction coefficient is calculated based on the maximum wire bow value and the actual lifting torque. This parameter reflects the stress and deformation of the cutting wire during the lifting process. When the friction coefficient is within a specific range, the spray mechanism is activated in a timely manner to increase the supply of lubricant, effectively reducing direct contact between the cutting wire and the carrier, adhesive layer, or silicon wafer, lowering friction, further improving the wire entanglement problem, and further protecting the silicon wafer from damage during the lifting process. If the friction coefficient is abnormally high, lifting is immediately stopped, and at least the lubricant spray is increased until the friction coefficient returns to normal before resuming lifting, further avoiding the risk of cutting wire breakage due to excessive friction. Conversely, if the friction coefficient is low, indicating a low risk of wire entanglement, the spray mechanism is turned off, saving lubricant and reducing the cost of the cutting process. This intelligent control strategy in this embodiment can more accurately control the friction state between the cutting wire and the carrier, adhesive layer, or silicon wafer, thereby further optimizing the cutting process and significantly improving cutting quality and production efficiency.

[0060] In some embodiments, the first threshold may be greater than or equal to 0.12. The second threshold may be greater than or equal to 0.15. The third threshold may be less than or equal to 0.1.

[0061] In other embodiments, when the friction coefficient is greater than the second threshold, at least the material lifting operation is stopped and the spraying mechanism is activated to spray the lubricant onto the cutting wire. This includes: stopping the material lifting operation when the friction coefficient is greater than the second threshold, controlling the cutting wire to travel at a third preset speed and activating the spraying mechanism so that the spraying mechanism sprays the lubricant onto the entry point of the cutting wire, the third preset speed being less than the second preset speed; and controlling the spraying mechanism to close when the activation time reaches a first duration, continuing the material lifting operation and controlling the cutting wire to travel at the second preset speed. In this embodiment, when an abnormal increase in the friction coefficient is detected, exceeding the set second threshold, the material lifting is stopped and the running speed of the cutting wire is reduced to a third preset speed (usually slower), while the spraying of lubricant is increased, focusing on the entry point area of ​​the cutting wire, which is the part with the most concentrated friction and the highest probability of wire snagging during the cutting process. In this way, the friction coefficient can be quickly reduced in a short time, avoiding wire snagging or even breakage caused by continued material lifting operation, and restoring normal working conditions between the cutting wire and the silicon wafer. The set spray duration ensures sufficient lubrication time before resuming the normal speed of material feeding and cutting lines. This entire process further guarantees cutting quality, avoids unnecessary downtime, and improves the continuity and stability of the production line.

[0062] In some embodiments, the third preset speed may be equal to the first preset speed, or it may be any speed value that is not equal to the first preset speed but less than the second preset speed.

[0063] According to some optional solutions of this application, controlling the spraying mechanism to close and start the material lifting operation includes: when the cutting line travels at the first preset speed for a second duration, controlling the spraying mechanism to close and start the material lifting operation, where the second duration is greater than or equal to the first duration, controlling the cutting line to travel at the first preset speed, and controlling the spraying mechanism to open to spray lubricant onto the cutting line, which includes: controlling the cutting line to travel at the first preset speed and opening the spraying mechanism to control the spraying mechanism to spray the lubricant onto the junction of the cutting line and the carrier plate, wherein the silicon rod is bonded to the carrier plate by an adhesive layer. In this embodiment, after the cutting wire runs at a lower first preset speed for a period of time (i.e., the second duration), the spraying mechanism is turned off and the material lifting begins. This strategy ensures sufficient lubrication of the cutting wire surface, which can reduce the initial friction when the cutting wire comes into contact with the carrier, adhesive layer, or silicon wafer during the subsequent material lifting process. Furthermore, since the probability of wire snagging is high at the junction of the cutting wire and the carrier, accurately spraying lubricant at the junction of the cutting wire and the carrier can effectively reduce friction in this area. In addition, spraying lubricant at the junction of the cutting wire and the carrier facilitates the introduction of lubricant into the carrier during the cutting wire's routing process, further ensuring a better lubrication effect. This further ensures the smooth progress of the subsequent material lifting operation, further avoids silicon wafer damage and the risk of cutting wire breakage caused by instantaneous high friction, and further improves the cutting yield and production efficiency.

[0064] In some exemplary solutions, the friction coefficient is determined based on the maximum arc length and the actual lifting torque, including one of the following: determining the friction coefficient as the quotient of the maximum arc length and the actual lifting torque multiplied by a preset factor; inputting the maximum arc length and the actual lifting torque into a preset model so that the preset model outputs the friction coefficient, wherein the preset model is trained using multiple sets of data through machine learning, and each set of data includes: historical maximum arc length, historical lifting torque, and historical friction coefficient; determining the friction coefficient based on the maximum arc length, the actual lifting torque, and a preset relationship, wherein the preset relationship characterizes the correspondence between the maximum arc length, the actual lifting torque, and the friction coefficient. This technical solution calculates the friction coefficient through multiple methods such as direct calculation, machine learning model prediction, and preset relationship mapping, providing a flexible and accurate means of assessing friction conditions. Specifically, the direct calculation method considers the combined effects of the maximum arc value, actual material lifting torque, and empirical factors, enabling rapid determination of the friction coefficient. The machine learning model, trained on extensive historical data, accurately predicts the changing trend of the friction coefficient, demonstrating excellent performance, especially in complex operating conditions. The pre-defined relational mapping establishes intuitive rules for estimating the friction coefficient, facilitating rapid decision-making. All these methods ensure real-time monitoring and intelligent control of the friction state between the cutting wire and the silicon wafer, effectively preventing production failures caused by abnormal friction, improving cutting accuracy and product quality, and providing data support for subsequent process optimization.

[0065] In some embodiments, obtaining the actual lifting torque and maximum bow value during the lifting process includes: acquiring image information of the cutting line; determining multiple deformations of the cutting line in the moving direction of the silicon wafer based on the image information; determining the maximum value among the multiple deformations as the maximum bow value; and reading the torque value of the torque sensor on the lifting drive shaft to obtain the actual lifting torque. By acquiring and analyzing image information, minute deformations of the cutting line in the moving direction of the silicon wafer can be accurately captured, and the actual lifting torque of the drive shaft can be accurately measured using a torque sensor, facilitating the subsequent acquisition of a more accurate coefficient of friction.

[0066] For example, the image information can be obtained by a radar camera, collected by a laser scanning device, or detected by an infrared thermal imaging device. The radar camera, laser scanning device, or infrared thermal imaging device can be mounted on the spray mechanism.

[0067] In other embodiments, the silicon rod cutting method further includes: obtaining the maximum arc value during the cutting process; and, if the maximum arc value is greater than a fourth threshold, performing at least one of the following: controlling the slurry mechanism to open to spray cutting fluid onto the cutting line, or reducing the cutting torque. In addition to arc control during the material handling stage, this embodiment also focuses on arc deformation throughout the entire cutting process. When the monitored maximum arc value exceeds a set fourth threshold, the cutting parameters are automatically adjusted, such as increasing the spraying of cutting fluid and / or reducing the cutting torque, to address and avoid arc problems during the cutting process.

[0068] In some embodiments, the mortar mechanism can be reused as a spraying mechanism, and the cutting fluid can be reused as a lubricant. In other embodiments, the mortar mechanism can also be set separately from the spraying mechanism, that is, the cutting equipment of this application is provided with both a mortar mechanism for spraying cutting fluid onto the cutting line during the cutting process and a spraying mechanism for spraying lubricant onto the cutting line after the cutting process.

[0069] According to some embodiments of this application, the first duration is greater than or equal to 1 minute, for example, the first duration can be 1 minute, 2 minutes, 3 minutes, or 5 minutes, etc. The second duration is greater than or equal to 2 minutes, for example, the second duration can be 2 minutes, 3 minutes, 4 minutes, 5 minutes, or 6 minutes.

[0070] In practical applications, the specific values ​​of the first preset speed, the second preset speed routing, the third preset speed, the preset factor, the first threshold, the second threshold, the third threshold, the first duration, and the second duration mentioned in this application can be obtained through a limited number of experimental verifications, or they can be determined based on empirical values.

[0071] The method for cutting silicon rods described in this application will be specifically described below with reference to specific embodiments and comparative examples.

[0072] Example 1

[0073] This embodiment provides a method for cutting a silicon rod, including:

[0074] After the silicon rod is cut into silicon wafers and before the material is fed, the cutting line is controlled to run at a first preset speed, and the spraying mechanism is controlled to open to spray lubricant onto the cutting line.

[0075] The spraying mechanism is controlled to close and the material lifting operation is started. During the material lifting process, the cutting line is controlled to move at a second preset speed, which is greater than the first preset speed.

[0076] The actual lifting torque and the maximum arc value are obtained during the lifting process. The actual lifting torque is the torsional torque that causes the silicon wafer to move away from the cutting line during the lifting process. The maximum arc value is the maximum deformation of the cutting line in the direction of movement of the silicon wafer.

[0077] Based on the maximum coil value and the actual lifting torque, the working state of the spraying mechanism is controlled during the lifting process until the lifting operation is completed.

[0078] Comparative Example 1

[0079] This comparative example provides a method for cutting a silicon rod, including:

[0080] The silicon rod is cut into silicon wafers, and then a lifting operation is performed. During the lifting operation, the cutting line is not rinsed until the lifting operation is completed.

[0081] Comparative Example 2

[0082] This comparative example provides a method for cutting a silicon rod, including:

[0083] The silicon rod is cut into silicon wafers, and then a lifting operation is performed. During the lifting operation, a high-pressure water gun is used to spray water to wash the cutting line until the lifting operation is completed.

[0084] Comparative Example 3

[0085] This comparative example provides a method for cutting a silicon rod, including:

[0086] The silicon rod is cut into silicon wafers, and then a lifting operation is performed. During the lifting operation, water is sprayed from a spray pipe to wash the cutting line until the lifting operation is completed.

[0087] 1000 silicon rods were cut using the methods described in Example 1 and Comparative Examples 1 to 3, and the wire hanging situation of these silicon rods during the material lifting process was tested. The test results are shown in Table 1.

[0088] Table 1

[0089] Example 0.91％ 1.81％ 3.67％ Comparative Example 1 14.81％ 18.52％ 29.63％ Comparative Example 2 7.14％ 5.36％ 16.07％ Comparative Example 3 7.27％ 3.64％ 14.55％

[0090] The experimental data show that the wire hanging rate of the carrier, the wire hanging rate of the adhesive layer, and the wire hanging rate of the silicon wafer in Example 1 are significantly lower than those in Comparative Examples 1 to 3. This indicates that the present application can effectively reduce the probability of wire hanging during the silicon rod cutting and feeding process, which is beneficial to increasing production capacity and reducing cutting wire loss and silicon wafer loss.

[0091] This application also provides a silicon rod cutting system, including:

[0092] Silicon rods;

[0093] The silicon rod cutting device includes a cutting line, a spray mechanism, one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for performing any of the silicon rod cutting methods described above.

[0094] In the embodiments described, the cutting system includes a silicon rod and a cutting device. The cutting device is used to operate any of the methods described to control the cutting wire to cut the silicon rod and to control the separation of the cutting wire from the silicon rod after cutting. During this process, by spraying lubricating fluid onto the cutting wire before lifting the material after cutting and controlling the cutting wire to move slowly, the lubricating fluid can be carried into the carrier plate through the cutting wire, reducing the friction between the cutting wire and the carrier plate and improving the wire snagging problem. During the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting wire, the on / off switch of the spraying mechanism is controlled based on these two factors to regulate the friction between the cutting wire and the carrier plate, adhesive layer, or wafer during the lifting process, which can further reduce the risk of the cutting wire getting snagged during the lifting process. In addition, controlling the rapid movement of the cutting wire during the lifting process can reduce adhesion between it and the carrier plate, adhesive layer, or wafer, which is beneficial for separating the cutting wire from the silicon wafer and ensuring the smooth execution of the lifting operation.

[0095] In one exemplary embodiment of this application, the cutting device further includes a mortar mechanism. Figure 3 An exemplary schematic diagram of a spraying mechanism in this application is shown. Figure 4 as well as Figure 5 An exemplary schematic diagram of the connection structure between the spraying mechanism and the mortar mechanism is shown, wherein, Figure 4 This is a front view of the connection structure. Figure 4 In the middle, the mortar system is located at the front, and the spraying system is located at the back; Figure 5 This is a front view of the connection structure. Figure 5 In the middle, the spraying mechanism is located at the front, and the mortar mechanism is located at the back. For example... Figure 3 , Figure 4 and Figure 5As shown, the spraying mechanism of this application includes a spray pipe 10, a liquid inlet pipe 11, a fixing component 12, and a limiting component 13. Specifically, the spray pipe 10 is provided with a plurality of nozzles 14, which can be arranged in a straight line on the spray pipe 10. The nozzles 14 are directly facing the entry point of the cutting line, so that the sprayed lubricating fluid can be evenly sprayed on the entry point of the cutting line and the carrier plate, adhesive layer, or silicon wafer. One end of the liquid inlet pipe 11 is connected to the water pump outlet hose (not shown in the figure), and the other end is connected to the spray pipe 10. One end of the fixing component 12 is connected to the limiting component 13, and the other end is connected to the back of the mortar mechanism 15. The mortar mechanism 15 includes a mortar pipe 16 for spraying cutting fluid.

[0096] The spraying mechanism may also include a water pump and a liquid storage structure connected to the water pump. The liquid storage structure is used to store lubricating fluid. The inlet pipe is connected to the liquid storage structure through the water pump outlet hose and the water pump. By controlling the start of the water pump, the spray flow rate and spray time of the lubricating fluid can be controlled.

[0097] For example, the mortar mechanism and the spraying mechanism can share a water pump and a liquid storage structure connected to the water pump. The liquid storage structure stores cutting fluid, which can also be used as a lubricant. The other end of the water pump outlet hose can be connected to the middle of the spray pipe, and three nozzles are respectively provided on the left and right sides of the middle of the spray pipe.

[0098] As can be seen from the above description, the embodiments described in this application achieve the following technical effects:

[0099] In the silicon rod cutting method of this application, before lifting the silicon rod after it has been cut through, the cutting wire is first controlled to travel at a relatively small first preset angle, while the spraying mechanism sprays lubricating fluid onto the cutting wire. Then, the spraying of lubricating fluid onto the cutting wire is stopped, and the lifting operation begins. During the lifting process, the cutting wire is controlled to travel at a relatively large second preset speed. Finally, the actual lifting torque and maximum wire bow value of the cutting wire during the lifting process are obtained, and the working state of the spraying mechanism is controlled based on these two values. This application sprays lubricating fluid onto the cutting wire before lifting it after cutting and controls the cutting wire to move slowly. This allows the lubricating fluid to be carried into the carrier plate through the cutting wire, reducing the friction between the cutting wire and the carrier plate and improving the wire snagging problem. During the lifting process, by monitoring the maximum wire bow value and the actual lifting torque of the cutting wire, the spraying mechanism is controlled to regulate the friction between the cutting wire and the carrier plate, adhesive layer, or wafer during the lifting process, which can further reduce the risk of the cutting wire getting snagged during the lifting process. In addition, controlling the rapid movement of the cutting line during the material handling process can reduce adhesion between the cutting line and the substrate, adhesive layer, or wafer, which is beneficial for separating the cutting line from the silicon wafer and ensuring the smooth execution of the material handling operation.

[0100] Those skilled in the art will understand that the various embodiments described are specific examples of implementing this application, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this application. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this application; therefore, the scope of protection of this application should be determined by the scope defined in the claims.

Claims

1. A method for cutting a silicon rod, characterized in that, include: After the silicon rod is cut into silicon wafers and before the material is fed, the cutting line is controlled to run at a first preset speed, and the spraying mechanism is controlled to open to spray lubricant onto the cutting line. The spraying mechanism is controlled to close and the material lifting operation is started. During the material lifting process, the cutting line is controlled to move at a second preset speed, which is greater than the first preset speed. The actual lifting torque and the maximum arc value are obtained during the lifting process. The actual lifting torque is the torsional torque that causes the silicon wafer to move away from the cutting line during the lifting process. The maximum arc value is the maximum deformation of the cutting line in the direction of movement of the silicon wafer. The working state of the spraying mechanism during the material lifting process is controlled based on the maximum coil value and the actual lifting torque. Based on the maximum arc length and the actual lifting torque, the working state of the spraying mechanism during the lifting process is controlled, including: determining the friction coefficient of the cutting wire based on the maximum arc length and the actual lifting torque; when the friction coefficient is greater than a first threshold and less than or equal to a second threshold, controlling the spraying mechanism to open to spray the lubricant onto the cutting wire; when the friction coefficient is greater than the second threshold, at least stopping the lifting operation and controlling the spraying mechanism to open to spray the lubricant onto the cutting wire; when the friction coefficient is less than or equal to a third threshold, the spraying mechanism is controlled to close, wherein the third threshold is less than or equal to the first threshold. The friction coefficient is determined based on the maximum arc length and the actual lifting torque, including one of the following: The friction coefficient is determined as the quotient of the maximum arc length and the actual lifting torque multiplied by a preset factor; the maximum arc length and the actual lifting torque are input into a preset model so that the preset model outputs the friction coefficient, wherein the preset model is trained using multiple sets of data through machine learning, and each set of data includes: historical maximum arc length, historical lifting torque, and historical friction coefficient; the friction coefficient is determined based on the maximum arc length, the actual lifting torque, and a preset relationship, wherein the preset relationship characterizes the correspondence between the maximum arc length, the actual lifting torque, and the friction coefficient.

2. The method for cutting silicon rods according to claim 1, characterized in that, When the coefficient of friction is greater than the second threshold, at least the material lifting operation is stopped and the spraying mechanism is activated to spray the lubricant onto the cutting line, including: When the friction coefficient is greater than the second threshold, the material lifting operation is stopped, the cutting line is controlled to run at a third preset speed and the spraying mechanism is turned on so that the spraying mechanism sprays the lubricant onto the inlet of the cutting line. The third preset speed is less than the second preset speed. When the spraying mechanism has been in operation for a first duration, the spraying mechanism is controlled to close, the material lifting operation continues, and the cutting line is controlled to travel at the second preset speed.

3. The method for cutting silicon rods according to claim 2, characterized in that, Controlling the spray mechanism to close and begin the material lifting operation includes: when the cutting line travels at the first preset speed for a second duration, controlling the spray mechanism to close and begin the material lifting operation, wherein the second duration is greater than or equal to the first duration. Controlling the cutting line to travel at a first preset speed and controlling the spraying mechanism to activate to spray lubricant onto the cutting line includes: controlling the cutting line to travel at the first preset speed and activating the spraying mechanism to control the spraying mechanism to spray the lubricant onto the junction of the cutting line and the carrier plate, wherein the silicon rod is bonded to the carrier plate by an adhesive layer.

4. The method for cutting silicon rods according to claim 1, characterized in that, Obtaining the actual lifting torque and maximum bow value during the lifting process includes: Acquire image information of the cutting line, and determine multiple deformation amounts of the cutting line in the moving direction of the silicon wafer based on the image information; The maximum value among the multiple deformation values ​​is determined as the maximum bow value; The actual lifting torque is obtained by reading the torque value from the torque sensor on the lifting drive shaft.

5. The method for cutting silicon rods according to claim 1, characterized in that, The method for cutting the silicon rod also includes: Obtain the maximum arc value during the cutting process of the silicon rod; If the maximum arc value is greater than the fourth threshold, the control mortar mechanism is activated to spray cutting fluid onto the cutting line, and / or, the cutting torque is reduced.

6. The method for cutting a silicon rod according to any one of claims 1 to 5, characterized in that, The first preset speed is 2~3 m / s.

7. The method for cutting silicon rods according to claim 3, characterized in that, The first duration is greater than or equal to 1 minute, and the second duration is greater than or equal to 2 minutes.

8. A silicon rod cutting system, characterized in that, include: Silicon rods; The silicon rod cutting apparatus includes a cutting wire, a spray mechanism, one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for performing the silicon rod cutting method according to any one of claims 1 to 7.

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