Two-dimensional anti-radiation low-noise current reading circuit based on trans-impedance amplifier
CN120474495APending Publication Date: 2025-08-12JINGPENG TWO-DIMENSIONAL SEMICONDUCTOR TECHNOLOGY (SHAOXING) CO LTD
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Patent Information
- Application Number
- CN202510551708.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-29
- Publication Date
- 2025-08-12
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Figure CN120474495A_ABST
Abstract
The invention belongs to the technical field of integrated circuits, and particularly relates to a two-dimensional anti-radiation low-noise current reading circuit based on a trans-impedance amplifier. The invention designs a low-noise current reading circuit which takes a trans-impedance amplifier as a basic prototype and has excellent radiation resistance based on an advanced two-dimensional process. Through meticulous design, the anti-radiation low-noise readout circuit based on the trans-impedance amplifier can remarkably improve the signal-to-noise ratio of the circuit and ensure reliable capture of weak signals, and due to the excellent anti-radiation characteristic of the two-dimensional transistor, the whole circuit can still work normally in the radiation environment. The two-dimensional anti-radiation low-noise reading circuit based on the trans-impedance amplifier can be widely applied to satellite-borne electronic equipment such as a satellite communication system and a satellite sensing detection system, and a nuclear power station electronic system.
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