显示装置
By setting a hybrid structure of polysilicon and oxide semiconductor in an organic EL display device, the electrode and gate design of the TFT are optimized, the problem of inappropriate functional requirements of different TFTs is solved, the characteristics of oxide semiconductor TFTs are appropriately optimized, and the display performance is improved.
CN120476438BActive Publication Date: 2026-07-17SHARP DISPLAY TECHNOLOGY CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHARP DISPLAY TECHNOLOGY CORP
- Filing Date
- 2023-01-18
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In organic EL display devices, it is difficult to simultaneously meet the functional requirements of different TFTs using a hybrid structure of polycrystalline silicon and oxide semiconductors, resulting in inappropriate characteristics.
Method used
A first thin-film transistor, a second thin-film transistor, and a third thin-film transistor are provided in the display device. Semiconductor layers formed using polycrystalline silicon and oxide semiconductors are used respectively, and the characteristics of each TFT are optimized through specific electrode and gate structures.
Benefits of technology
The characteristics of oxide semiconductor TFTs were optimized, thus improving the performance of display devices.
✦ Generated by Eureka AI based on patent content.
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Figure CN120476438B_ABST
Abstract
在每个子像素中设有具有由多晶硅形成的第一半导体层（12a）的第一TFT（9A）、具有由氧化物半导体形成的第二半导体层（16a）的第二TFT（9B）和由氧化物半导体形成的第三半导体层（19a）的第三TFT（9C），第二TFT（9B）具有顶部接触结构，在第二半导体层（16a）的上侧与第三端子电极（23c）和第四端子电极（23d）电连接，第三TFT（9C）具有底部接触结构，在第三半导体层（19a）的下侧与第五端子电极（23e）和第六端子电极（23f）电连接。
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