Substrate holding device and film forming apparatus

Abstract

Provided is a technique capable of improving alignment accuracy of a substrate in a film forming apparatus. A substrate holding device, which is used in a film forming device that forms a film on a substrate, is characterized by being provided with: an electrostatic chuck that adsorbs the substrate; a member in contact with the electrostatic chuck, the member having a thermal conductivity higher than that of the electrostatic chuck; and a temperature control part that controls the temperature of the member.

Description

Technical Field

[0001] The present invention relates to a substrate holding device for a film forming device. Background Art

[0002] In recent years, flat-panel displays such as organic EL displays have been used as display screens for monitors, televisions, and smartphones. The panel of an organic EL display has a structure in which a luminescent organic layer is formed between two opposing electrodes (a cathode electrode and an anode electrode). When forming an organic EL display panel using a film-forming apparatus, a substrate holder disposed in a chamber of the film-forming apparatus holds the periphery of the substrate. An evaporation source located in the lower portion of the chamber is heated to release a metal or organic evaporation material, which is then deposited onto the lower surface of the substrate through a mask.

[0003] Here, the center portion of the substrate, which holds the peripheral portion, may deflect due to its own weight. As substrates become larger, this deflection in the center becomes greater, significantly impacting deposition accuracy. Patent Document 1 proposes a technique for mitigating this substrate deflection by using an electrostatic chuck (ESC) to hold the substrate.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-099910 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] The evaporation source temperature within the film deposition chamber is very high, creating a significant temperature difference between the evaporation source and other components within the chamber. This makes it difficult to control the temperature of the electrostatic chuck, substrate, and mask, which can sometimes deform and change dimensions due to thermal expansion. This dimensional change can lead to reduced alignment accuracy and reduced film quality.

[0009] An object of the present invention is to provide a technology capable of performing temperature control with high precision in a film forming apparatus.

[0010] Means for solving problems

[0011] In order to solve the above-mentioned problems, the substrate holding device of the present invention is used in a film forming device for forming a film on a substrate, and is characterized in that the substrate holding device includes:

[0012] an electrostatic chuck for absorbing the substrate;

[0013] a member in contact with the electrostatic chuck, the member having a thermal conductivity higher than that of the electrostatic chuck; and

[0014] A temperature control component controls the temperature of the component.

[0015] In order to solve the above-mentioned problems, the film forming apparatus of the present invention comprises:

[0016] chamber;

[0017] an evaporation source, the evaporation source being disposed in the chamber;

[0018] an electrostatic chuck disposed in the chamber and configured to adsorb the substrate; and

[0019] a mask bonded to the film-forming surface of the substrate adsorbed on the electrostatic chuck,

[0020] It is characterized in that the film forming device comprises:

[0021] a member in contact with the electrostatic chuck, the member having a thermal conductivity higher than that of the electrostatic chuck; and

[0022] A temperature control component controls the temperature of the component.

[0023] Effects of the Invention

[0024] According to the present invention, it is possible to perform temperature control with high precision in a film forming apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic plan view showing the structure of a film forming apparatus.

[0026] Figure 2 It is a cross-sectional view showing the internal structure of the film forming chamber.

[0027] Figure 3 This is a schematic diagram showing an example of a production line for organic EL display devices.

[0028] Figure 4 It is a schematic cross-sectional view illustrating the structure of the temperature adjustment mechanism according to the first embodiment of the present invention.

[0029] Figure 5 This is a schematic diagram showing an example of temperature adjustment control in an organic EL production line.

[0030] Figure 6 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a second embodiment of the present invention.

[0031] Figure 7It is a schematic plan view showing the arrangement structure and control structure of multiple temperature adjustment components.

[0032] Figure 8 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a third embodiment of the present invention.

[0033] Figure 9 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a fourth embodiment of the present invention.

[0034] Figure 10 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a fifth embodiment of the present invention.

[0035] Figure 11 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a sixth embodiment of the present invention.

[0036] Figure 12 A diagram illustrating a method for manufacturing an electronic device. DETAILED DESCRIPTION

[0037] The following describes embodiments of the present invention in detail. However, the following embodiments merely illustrate preferred configurations of the present invention and do not limit the scope of the present invention to these configurations. Furthermore, unless otherwise specified, the hardware and software configurations, processing procedures, manufacturing conditions, dimensions, materials, shapes, and relative configurations of the devices described below are not intended to limit the scope of the present invention to these configurations.

[0038] The present invention is applicable to a film forming device that forms a thin film of a film forming material on the surface of a film forming object such as a substrate by evaporation or sputtering. The present invention can be understood as a temperature control mechanism, a substrate holding device, a film forming device, and a temperature control method or control method using these devices. In addition, the present invention can also be understood as an electronic device manufacturing device and its control method, and an electronic device manufacturing method. In addition, the present invention can also be understood as a program that causes a computer to execute a temperature control method or control method, and a storage medium storing the program. The storage medium can also be a non-temporary storage medium that can be read by a computer.

[0039] As the material of the substrate in the present invention, any material such as glass, resin, metal, silicon, etc. can be used. As the film-forming material, any material such as organic material, inorganic material (metal, metal oxide), etc. can be used. The "substrate" in the following description includes a substrate on which a film has been formed more than once on the surface of the substrate material. The technology of the present invention can be typically applied to manufacturing devices for electronic devices and optical components. In particular, it is suitable for organic electronic devices such as organic EL displays having organic EL elements and organic EL display devices using the organic EL displays. In addition, the present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0040] <Implementation Method>

[0041] (Device Structure)

[0042] Figure 1 This is a top view schematically showing the structure of film-forming apparatus 1. Here, the production line for organic EL displays is described. When manufacturing organic EL displays, substrates of a specified size are brought into the production line. After the organic EL and metal layers are formed, post-processing steps such as substrate cutting are performed.

[0043] The film forming apparatus 1 includes a centrally located conveying chamber 130, a plurality of film forming chambers 110 (110a to 110d) arranged around the conveying chamber 130, and a mask storage chamber 120 (120a, 120b). The film forming chamber 110 includes a chamber for performing film forming on the substrate 10. The mask storage chamber 120 stores masks before and after use. A conveying robot 140 disposed within the conveying chamber 130 moves substrates S and masks M into and out of the conveying chamber 130. The conveying robot 140 is, for example, a robot having a multi-jointed arm equipped with a manipulator for holding the substrate S and mask M.

[0044] The path chamber 150 transports substrates S, which are fed from upstream in the substrate transport direction, to the transport chamber 130. The buffer chamber 160 transports substrates S in the transport chamber 130 that have completed film formation to other film formation groups downstream. The transport robot 140 receives substrates S from the path chamber 150 and transports them to one of the multiple film formation chambers 110. The transport robot 140 also receives substrates S that have completed film formation from the film formation chamber 110 and transports them to the buffer chamber 160.

[0045] Figure 1 The film-forming apparatus 1 shown here forms a film-forming group, capable of connecting to other film-forming groups upstream and downstream. A swirl chamber 170 is located upstream of the path chamber 150 and downstream of the buffer chamber 160 to redirect the substrate 10. Each chamber, including the film-forming chamber 110, mask storage chamber 120, transport chamber 130, buffer chamber 160, and swirl chamber 170, is maintained at a high vacuum during the manufacturing process.

[0046] The film-forming materials in the multiple film-forming chambers 110a to 110d of the film-forming device 1 may be the same or different. For example, different film-forming material sources may be arranged in the film-forming chambers 110a to 110d, respectively, so that the substrate S forms a stacked structure while moving in the film-forming chambers 110a to 110d in sequence. In addition, by arranging film-forming sources of the same film-forming material in the film-forming chambers 110a to 110d, film formation may be performed on multiple substrates S in parallel. In addition, a first film-forming material may be arranged in the film-forming chambers 110a and 110c, and a second film-forming material may be arranged in the film-forming chambers 110b and 110d, and the control may be such that after the first layer is formed in the film-forming chamber 110a or 110c, the second layer is formed in the film-forming chamber 110b or 110d.

[0047] Depending on the type of electrostatic chuck, the substrate's suction force can be enhanced when a conductor is attached to the substrate. In this case, effective suction can be achieved when a thin film of a metal material, which will serve as an electrode layer, has already been formed in the region of the substrate where the organic EL element is formed (typically the center of the substrate). For example, when an organic layer is sequentially formed in film formation chambers 110b-110d on a substrate where an electrode layer has already been formed in film formation chamber 110a, it is effective to configure electrostatic chucks in film formation chambers 110b-110d.

[0048] (Film Forming Room)

[0049] Figure 2 is a cross-sectional view showing the internal structure of the film forming chamber 110. In the film forming chamber 110, a series of film forming processes are performed, including receiving a substrate S and a mask M from a transport robot 140, handing the substrate S and mask M to the transport robot 140, alignment to adjust the relative position of the substrate S and mask M, securing the substrate S to the mask M, and film formation. In the following description, an XYZ orthogonal coordinate system is used, with the vertical direction being the Z direction, and rotation about the Z axis is represented by θ.

[0050] The film forming chamber 110 includes a chamber 200. During film formation, the interior of the chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. Inside the chamber 200, there are installed an electrostatic chuck C, a magnet plate MP, a temperature control member TM, a cooling plate CP, a substrate support 210, a mask stage 221, an evaporation source 240 (film forming source), and the like.

[0051] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. For example, a metal mask with a patterned metal foil supported by a frame can be used as the mask M. The mask M is placed on the mask stage 221. In the structure of this embodiment, film formation is performed after the substrate S is positioned and placed on the mask M.

[0052] The substrate support 210 includes a plurality of claw-shaped supports 210a for receiving the substrate S transported into the film forming chamber. The electrostatic chuck C, a substrate holding member within the film forming chamber, utilizes electrostatic force to hold the substrate S supported by the substrate support 210. The electrostatic chuck C abuts against the surface of the substrate S opposite to the surface in contact with the mask M (the surface on which the film is to be formed).

[0053] Furthermore, the substrate support 210 may include a pressing member corresponding to the support member 210a. By clamping the end of the substrate S between the support member 210a and the pressing member, the substrate support 210 can also hold the substrate S in addition to the electrostatic chuck C, thereby making the substrate S more stable.

[0054] The magnet plate MP is provided to attract the mask M and bring it into close contact with and adsorb it to the film-forming surface of the substrate S. With the substrate S, which has been adsorbed and aligned relative to the electrostatic chuck C, placed on the upper surface of the mask M (joining the film-forming surface of the substrate S and the mask M), the magnet plate MP is lowered from above the electrostatic chuck C and brought into contact with the upper surface of the electrostatic chuck C (via the highly thermally conductive sheet HT in Example 1 and other embodiments). The magnet plate MP exerts a magnetic force on the mask M through the electrostatic chuck C and the substrate S (causing a magnetic attraction force to act, attracting it upward (toward the substrate S)), thereby bringing the mask M into close contact with the substrate S.

[0055] The film forming apparatus of this embodiment includes a temperature control unit T as a temperature control mechanism (temperature control component). This temperature control unit T is used to suppress the temperature rise of the substrate S during film formation and prevent the deterioration and degradation of the organic material. As an example, the temperature control unit T is composed of a temperature control member TM, a cooling plate CP, etc., but the specific structure will be described later.

[0056] The evaporation source 240 is a film forming unit including a container such as a crucible for storing the evaporation material, a heater, a baffle, a drive mechanism, an evaporation rate monitor, etc. The film forming source is not limited to an evaporation source, and a sputtering device may also be used.

[0057] An alignment stage 280, an electrostatic chuck lifting mechanism 291, and a magnet plate lifting mechanism 292 are installed on the upper outer portion of the chamber 200. The alignment stage 280 is used to move the electrostatic chuck C and the magnet plate MP in the horizontal direction (XYθ directions). The electrostatic chuck lifting mechanism 291 is used to lift the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 is used to lift the magnet plate MP in the Z-axis direction. This allows for position adjustment (relative distance adjustment) of the electrostatic chuck C relative to the substrate S and for adjustment of the magnet plate MP relative to the mask M in a direction intersecting the plane along the film deposition surface of the substrate S.

[0058] The alignment stage 280 is configured to move relative to the chamber 200 in the horizontal direction (XYθ direction) by receiving driving force from a motor 281 for driving the alignment stage, such as a UVW actuator. On the outer upper surface of the chamber 200, three linear motion actuators, consisting of a guide rail (not shown) fixed to the upper surface of the chamber 200 and a linear block movably mounted on the guide rail, are arranged so that two of the linear motion actuators are parallel to each other and one of the linear motion actuators is orthogonal. The base plate 282 is supported by the three linear blocks. The base plate 282 is moved in the horizontal direction (XYθ direction) by the driving force of the motor 281 mounted on the outer upper surface of the chamber 200, which moves the three linear blocks in predetermined directions. By combining the movement directions of the three linear blocks, the base plate 282 can be moved to any position in the horizontal direction and can be changed in any direction. The movement of the base plate 282 allows the entire alignment stage 280 to move relative to the chamber 200 in the horizontal direction (XYθ direction).

[0059] The alignment stage 280 moves the electrostatic chuck C by driving a motor 281 in accordance with a control signal sent from a control unit 270, described later, thereby moving the substrate S held by the electrostatic chuck C in the X and Y directions and rotating it in the θ direction. The drive mechanism of the alignment stage 280 is not limited to the aforementioned UVW actuator, and other known structures may also be used.

[0060] The electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on the alignment stage 280. Therefore, by moving the alignment stage 280 horizontally (in the X, Y, and θ directions) relative to the chamber 200, the electrostatic chuck C and the magnet plate MP are also moved horizontally (in the X, Y, and θ directions) relative to the chamber 200.

[0061] The electrostatic chuck lifting mechanism 291 is a mechanism for raising and lowering the electrostatic chuck C in the Z-axis direction and is mounted on the alignment stage base plate 282. The electrostatic chuck C in the chamber 200 is connected to the electrostatic chuck lifting mechanism 291 outside the chamber 200 via a shaft that airtightly passes through the ceiling of the chamber 200. The electrostatic chuck lifting mechanism 291 includes a motor (not shown) for driving the electrostatic chuck to raise and lower the chuck, an actuator (not shown) for driving the electrostatic chuck to raise and lower the chuck, and the like. The actuator is configured to receive the driving force of the motor and raise and lower the shaft supporting the electrostatic chuck C. Specific examples of the actuator include linear guides and ball screws.

[0062] The magnet plate lifting mechanism 292 is a mechanism for lifting the magnet plate MP in the Z-axis direction and is mounted on the alignment stage base plate 282. The magnet plate MP in the chamber 200 is connected to the magnet plate lifting mechanism 292 outside the chamber 200 via a shaft that passes through the top plate of the chamber 200 in an airtight manner. The magnet plate lifting mechanism 292 includes a motor (not shown) for driving the magnet plate to lift and lower the magnet plate, an actuator (not shown) for driving the magnet plate to lift and lower the magnet plate, and the like. The actuator is configured to receive the driving force of the motor and raise and lower the shaft supporting the magnet plate MP. Specific examples of the actuator include linear guides and ball screws.

[0063] Thus, the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on the bottom plate 282 of the alignment stage 280. Therefore, by moving the alignment stage 280 in the horizontal direction (XYθ direction), the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 (and therefore, the electrostatic chuck C and the magnet plate MP) also move in the horizontal direction (XYθ direction). As a result, even if, for example, there is a positional misalignment between the substrate S and the electrostatic chuck C, the relative position between them can be adjusted. Similarly, even if there is a positional misalignment between the mask M and the magnet plate MP, the relative position between them can be adjusted.

[0064] Furthermore, in this embodiment, the substrate support 210 and mask stage 221 are fixed in the horizontal direction (X, Y, and θ directions) relative to the chamber 200, but are configured to be movable in the vertical direction (Z-axis direction). The lifting mechanism for vertically lifting the substrate support 210 and mask stage 221 is provided on the outer upper surface of the chamber 200, separate and independent from the alignment stage.

[0065] The lifting mechanism (not shown) for the substrate support 210 and the mask stage 221 is mounted on a base plate (not shown) fixed to the outer upper surface of the chamber 200 and separate from the base plate 282. This mechanism is independent and separate from the alignment stage 280. Therefore, even if the alignment stage 280 moves in the horizontal (XYθ) direction, the substrate support 210 and the mask stage 221 do not move in the horizontal (XYθ) direction.

[0066] In addition, in this embodiment, a structure for adjusting the position of the substrate S (by adjusting the position of the electrostatic suction cup C) is adopted, but as long as the substrate S and the mask M can be relatively aligned, a structure for adjusting the position of the mask M or a structure for adjusting both the substrate S and the mask M may also be adopted.

[0067] When the electrostatic chuck C holds the substrate S supported by the substrate support portion 210, the electrostatic chuck elevating mechanism 291 first lowers the electrostatic chuck C so that the electrostatic chuck C contacts or is sufficiently close to the substrate S. The control unit 270 then controls the power supply 290 to apply a predetermined attraction voltage to the electrode embedded in the electrostatic chuck C. Thus, the electrostatic chuck C holds the substrate S.

[0068] Next, during alignment, the electrostatic chuck elevating mechanism 291 further lowers the electrostatic chuck C to bring the substrate S closer to the mask M. Then, alignment is performed on the alignment stage 280 .

[0069] Here, the electrostatic chuck C in this embodiment constitutes an element of the substrate holding device of the present invention. Elements of the substrate holding device of the present invention may include a power supply 290, a control unit 270, an electrostatic chuck lifting mechanism 291, and the like. The various types of temperature control units T described below, or the components of the temperature control unit T, are included as temperature control components, etc., in the elements constituting the substrate holding device and film forming apparatus of the present invention.

[0070] Next, during film formation, the evaporation source 240 releases the film-forming material. When film formation is complete, the magnet plate lifting mechanism 292 raises the magnet plate MP, and the electrostatic chuck lifting mechanism 291 raises the electrostatic chuck C, transferring the film-formed substrate S to the transfer robot. The voltage applied to the electrostatic chuck C is then set to a predetermined peeling voltage (e.g., 0V), releasing the substrate S from its grip.

[0071] A camera 262 is provided on the upper outer portion of the chamber 200 to perform optical imaging and generate image data. The camera 262 performs imaging through a vacuum-sealed window provided in the chamber 200. In this embodiment, a plurality of cameras 262 are provided corresponding to the four corners of the substrate S. Each camera 262 is arranged so that its imaging range includes substrate alignment marks provided at the corners of the substrate S and mask alignment marks provided at the corners of the mask M.

[0072] During alignment, camera 262 captures images of substrate S and mask M and outputs the image data to control unit 270. Control unit 270 analyzes the captured image data and obtains positional information of substrate and mask alignment marks through methods such as pattern matching. Based on the positional offset between the substrate and mask alignment marks, the XY directions, movement distance, and rotation angle θ of substrate S are calculated. The calculated movement amounts are then converted into drive levels for the stepping motors, servo motors, and other actuators of alignment stage 280, generating control signals. Alternatively, a two-stage alignment process can be performed using a coarse alignment camera with a lower resolution but a wider field of view and a fine alignment camera with a narrower field of view but a higher resolution.

[0073] The control unit 270 is an information processing device that communicates with the various components of the film forming device 1 via control lines not shown in the figure or wireless communications, receives data from each component, or sends signals to each component to control the action. The control unit 270 can be composed of a computer having a processor, memory, storage device, I / O, etc. In this case, the functions of the control unit 270 are realized by executing a program stored in the memory or storage device by the processor. As a computer, a general-purpose personal computer, an embedded computer or a PLC (programmable logic controller) can be used. Alternatively, part or all of the functions of the control unit 270 can be composed of circuits such as ASIC and FPGA. In addition, a control unit 270 can be provided for each film forming chamber, or a plurality of film forming chambers can be controlled by one control unit 270.

[0074] Power supply 290 is a high-voltage power supply device capable of supplying voltage to the various components of film-forming apparatus 1 via conductive lines (not shown). Power supply 290 controls the polarity and magnitude of the applied voltage according to instructions from control unit 270. Power supply 290 can be considered a voltage supply component. By controlling the polarity and magnitude of the applied voltage (adsorption voltage) applied to the electrodes of electrostatic chuck C, the adsorption force on substrate S can be controlled. Furthermore, power supply 290 and control unit 270 can be considered to constitute the power supply of the film-forming apparatus together.

[0075] Furthermore, the application of the present invention is not limited to the aforementioned cluster-type film forming apparatus. The present invention can also be applied to an in-line film forming apparatus in which a plurality of chambers are connected in a vacuum-connected manner, and a substrate held on a substrate carrier is moved between the chambers while film formation is performed.

[0076] (Electrostatic Chuck)

[0077] The electrostatic chuck C has a structure in which circuits, such as metal electrodes, are embedded in a plate-shaped substrate made of ceramic or other materials. Generally, electrostatic chucks are classified into three types, depending on the principle of substrate adsorption: gradient force type, Coulomb force type, and Johnson-Rabbich force type. In all cases, the higher the applied adsorption voltage, the greater the adsorption force.

[0078] The gradient force type electrostatic chuck uses the attraction generated toward the area with the potential gradient (gradient) generated by the potential difference between the electrodes to adsorb the adsorption object. Since the gradient force has the characteristic that it can be generated even if the adsorption object is an insulator, even a glass substrate with plain glass or a conductive material without a film can be held. When the gradient force is generated, the potential of the adsorption object is used as a reference, and the adsorption voltage is applied in such a way that the potential of the first electrode is higher than the reference and the potential of the second electrode is lower than the reference. In order to increase the gradient force and make the potential gradient as steep as possible, it is necessary to reduce the space between the electrodes and densely arrange the electrodes. Therefore, as an electrode for the gradient force type electrostatic chuck, it is preferred to have two comb-tooth electrodes with a structure in which protruding comb teeth mesh with each other.

[0079] The Coulomb force type electrostatic chuck is a chuck that uses the electrostatic attraction generated by applying positive and negative potential voltages to two electrodes to adsorb the adsorption object. It is effective when the adsorption object is a conductor. Therefore, if it is a substrate with a metal electrode layer formed, it can be effectively adsorbed. When the adsorption object is in an ungrounded floating state, by making both the positive electrode and the negative electrode face the adsorption object, polarization can be generated in the adsorption object and adsorption can be performed. In addition, when the adsorption object is grounded, adsorption can be performed by at least one of the positive electrode and the negative electrode. Generally speaking, the Coulomb force is stronger than the gradient force. In addition, the larger the area of the electrode facing the adsorption object, the stronger the adsorption force. Therefore, in order to increase the adsorption force, it is necessary to increase the ratio of the electrode area to the electrostatic chuck area as much as possible.

[0080] A Johnson-Rabbec electrostatic chuck attracts a conductive object by directing a leakage current through a positive electrode, the object, and then the negative electrode. This requires a dielectric with a volume resistance within a specified range between the electrodes and the object. Generally speaking, the Johnson-Rabbec force is stronger than the Coulomb force. Furthermore, in a Johnson-Rabbec electrostatic chuck, increasing the contact area with the object increases the attraction.

[0081] (Production line for organic EL display devices)

[0082] Figure 3 An example of a production line for organic EL display devices is shown. Figure 3 The production line shown is a five Figure 1 The production line shown includes a film forming group (film forming apparatus) 1 (film forming groups 1-1 to 1-5) having four film forming chambers 11 and a film forming group 1b (film forming group 1-6) having two film forming chambers 11 connected in series.

[0083] Of the five film-forming groups 1-1 to 1-5, the four film-forming groups 1-1 to 1-4 upstream of the production line constitute the first organic vapor deposition section 102 in the production line, forming a total of eight organic layers. Each film-forming group forms two organic layers on the substrate S. The film-forming group 1-5 downstream of the first organic vapor deposition section 102 constitutes the metal vapor deposition section 103 in the production line, forming two metal layers on the substrate S. The film-forming group 1b downstream of the first organic vapor deposition section 102 constitutes the second organic vapor deposition section 104 in the production line, forming a single organic layer on the substrate S.

[0084] In the production line of organic EL display devices, the substrate S is first put into the pre-processing unit 101, and after the required pre-processing steps are carried out, it is transported to the post-processing step via the first organic vapor deposition unit 102, the metal vapor deposition unit 103, and the second organic vapor deposition unit 104. Figure 3 In the production line shown, the substrate S is sent to the subsequent process via, for example, a path A or a path B indicated by arrows in the figure.

[0085] The substrate S is heated in each of the deposition units 102 to 104. That is, the substrate S is repeatedly heated as it passes through the production line. Generally, to evaporate the deposition source, the deposition source is heated to approximately 450°C for organic film formation and to approximately 1300°C for metal film formation.

[0086] Assuming that in the above production line, the temperature of substrate S rises by 0.1°C in the organic vapor deposition chamber and by 0.3°C in the metal vapor deposition chamber, since heat dissipation is almost nonexistent in a vacuum environment, the substrate S, which was placed in the pre-processing unit 101 at 23°C, will rise to 24.5°C after 11 vapor deposition cycles. If the thermal expansion coefficient of a typical glass substrate is 3.8×10-6 / m / °C, it will expand by 3.8×10-6×24.5°C=93.1μm per meter. Furthermore, when moving from one organic vapor deposition chamber to the next, it will also expand by 3.8×0.1=0.38μm / m. A G8H-sized glass substrate, classified as large, has a long side of 2.5m and expands by 0.38×2.5=0.95μm with a temperature change of 0.1°C.

[0087] If dimensional changes such as those described above occur, even if the substrate S and mask M are aligned within ±2.0 μm, elongation of the substrate S may cause misalignment, resulting in reduced alignment accuracy. Furthermore, reduced alignment accuracy can degrade film quality, potentially preventing optimal deposition results. Furthermore, dimensional changes caused by the high temperatures during deposition can also occur in the electrostatic chuck C, potentially adding to these changes and further reducing alignment accuracy.

[0088] (Temperature adjustment mechanism)

[0089] In order to suppress the influence of the elongation of the substrate S on the above-mentioned organic EL production line, the film forming device in this embodiment has a temperature regulating mechanism (temperature regulating component) for controlling the temperature of the electrostatic chuck C to which the substrate S is attached as a component for controlling the temperature of the substrate S. By regulating the temperature of the electrostatic chuck C, the heat given to the substrate S due to evaporation is absorbed by the electrostatic chuck C, and the temperature rise of the substrate S is suppressed. Moreover, the temperature of the substrate S before being put into the next process is controlled to be reduced to an appropriate input temperature in the next process, and then the substrate S is sent to the next process. In addition, an example of a temperature rise of the substrate is shown here, but the temperature of the substrate sometimes decreases during the transportation process. In this case, the substrate S is controlled to be sent to the next process after the temperature is increased to an appropriate input temperature in the next process. It is not limited to keeping the temperature of the substrate constant, and different target substrate temperatures can also be controlled in each chamber. Depending on the purpose, the temperature regulating component can appropriately adopt a method of both heating and cooling, a method of only heating, and a method of only cooling.

[0090] Hereinafter, temperature adjustment units T1 to T7 of Examples 1 to 7 are shown as specific configuration examples of the temperature adjustment mechanism.

[0091] <Example 1>

[0092] Figure 4 It is a schematic cross-sectional view illustrating the structure of the temperature adjustment mechanism according to the first embodiment of the present invention.

[0093] like Figure 4 As shown, the temperature control component in the film forming apparatus of this embodiment includes a temperature control unit T1. The temperature control unit T1 includes a temperature control member TM, a high thermal conductivity sheet HT, a cooling plate CP, etc. As elements constituting the temperature control component, in addition to the temperature control unit T1, there are also a temperature sensor TS1, a temperature sensor TS2 (see Figure 2 ), a magnet plate MP as a first heat transfer member, an electrostatic chuck C as a second heat transfer member, etc.

[0094] (Temperature Control Components™)

[0095] The temperature control member TM of this embodiment is a plate-shaped member incorporating a Peltier element. The temperature control member TM is integrally mounted with the magnet plate MP and rises and falls along with it. Specifically, it is arranged in contact with the upper surface of the base plate BP of the magnet plate MP (the surface opposite the surface facing the electrostatic chuck C).

[0096] In this embodiment, the temperature control member TM is divided into multiple parts. That is, multiple temperature control members TM are evenly spaced on the upper surface of the bottom plate BP of the magnet plate MP. Alternatively, the temperature control member TM may be formed of a single member so that the temperature control member TM contacts substantially the entire area of the upper surface of the bottom plate BP. In other words, the structure of the temperature control member TM is not limited to Figure 4 The structure shown.

[0097] Furthermore, a cooling plate CP is disposed in contact with the upper surface of the temperature control member TM (the surface opposite to the surface in contact with the magnet plate MP). Specifically, the temperature control member TM is disposed so as to be sandwiched between the magnet plate MP and the cooling plate CP in the Z-axis direction, and is configured to directly exchange heat between the magnet plate MP and the cooling plate CP.

[0098] Here, a Peltier element is a plate-shaped element made of alternating P-type and N-type semiconductors. When a direct current flows through a Peltier element, heat moves between its two surfaces, causing one surface to generate heat, causing the temperature to rise, while the opposite surface absorbs heat, causing the temperature to drop. Heating and cooling can be achieved by switching the direction of the current input to the Peltier element. Generally speaking, Peltier elements have a fast response among temperature control elements and can be switched at high speed, thus enabling high-precision temperature control.

[0099] (High Thermal Conductivity Sheet HT)

[0100] The high thermal conductivity sheet HT (high thermal conductivity member) is a sheet-like member made of a material with a higher thermal conductivity than the electrostatic chuck C and the magnet plate MP. The high thermal conductivity sheet HT is arranged in contact with the upper surface 261 of the electrostatic chuck C (the surface opposite to the adsorption surface 260 that adsorbs the substrate S). When the magnet plate MP is lowered toward the electrostatic chuck C to attract (adsorb) the mask M to the substrate S, the magnets MG of the magnet plate MP come into contact with the upper surface of the high thermal conductivity sheet HT (the surface opposite to the surface in contact with the electrostatic chuck C). In other words, when the magnet plate MP is lowered (during the attraction of the mask M), the high thermal conductivity sheet HT is sandwiched between the electrostatic chuck C and the magnet plate MP in the Z-axis direction. In this state, the high thermal conductivity sheet HT is configured to perform heat exchange between the electrostatic chuck C and the magnet plate MP.

[0101] By bringing a highly thermally conductive sheet HT having a higher thermal conductivity than the electrostatic chuck C into contact with the electrostatic chuck C, the electrostatic chuck C can be efficiently cooled. This cooling effect is achieved regardless of the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C, but the larger the contact area, the greater the cooling effect.

[0102] In this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is larger than the Z-axis projection area of the multiple magnets MG of the magnet plate MP (the total contact area between the multiple magnets MG and the highly thermally conductive sheet HT). This improves the cooling effect compared to a case where the multiple magnets MG of the magnet plate MP are in direct contact with the electrostatic chuck C.

[0103] Furthermore, in this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is larger than the Z-axis projection area of the temperature control member TM (the total contact area between the multiple temperature control members TM and the magnet MG (base plate BP)). This improves the cooling effect compared to a case where the multiple temperature control members TM are in direct contact with the electrostatic chuck C.

[0104] Furthermore, in this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is ensured to be as large as possible, and the highly thermally conductive sheet HT is uniformly in contact with the entire upper surface 261 of the electrostatic chuck C. For example, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is preferably at least 50% of the area of the electrostatic chuck C projected in the Z-axis direction. This allows the temperature of the electrostatic chuck C to be uniformly lowered throughout.

[0105] (Cooling Plate CP)

[0106] The cooling plate CP is a plate-shaped cooling member made of stainless steel. It contains a water channel WP, a cooling pipe that circulates a refrigerant. The water channel WP is configured to circulate cooling water, the refrigerant, between the chamber 200 and the exterior. The cooling water absorbs heat applied to the cooling plate CP and discharges it to the exterior. The cooling plate CP is an optional feature designed to further enhance cooling efficiency and can be omitted from the temperature control unit T1.

[0107] (Temperature sensor TS1)

[0108] Temperature sensor TS1 (first temperature detection member) detects the temperature of electrostatic chuck C and is mounted on base 250 of electrostatic chuck C. It is configured to transmit the detected temperature to control unit 270. For example, a thermistor, a diode, or the like can be used as temperature sensor TS1.

[0109] In this embodiment, the temperature of the electrostatic chuck C to which the substrate S is attached is constantly monitored by a temperature sensor TS1. The substrate S receives thermal energy from vapor deposition, causing its temperature to rise, and this thermal energy is transferred to the electrostatic chuck C. The temperature of the electrostatic chuck C at this time is detected by the temperature sensor TS1 and fed back into the cooling operation by the temperature control unit T1 (particularly, the temperature control member TM).

[0110] (Temperature sensor TS2)

[0111] The temperature sensor TS2 (second temperature detecting member) is a temperature sensor that detects the temperature of the mask M. Figure 2 As shown, it is provided on the side wall of the chamber 200 and is configured to transmit the detected temperature to the control unit 270. As the temperature sensor TS2, for example, a radiation thermometer that measures the temperature of the mask M based on electromagnetic waves (light) emitted from the mask M can be used.

[0112] (Temperature Control Unit)

[0113] The control unit 270 includes a current supply unit (see FIG. 2 ) for supplying current to the Peltier element of the temperature adjustment member TM based on the power supplied from the power source 290. Figure 7 Controller 270, as the control unit in the temperature control component, controls the temperature (heat exchange state) of temperature control member TM by controlling the current flowing from the current supply unit to the Peltier element of temperature control member TM. Controller 270, along with power supply 290, can be considered to be included in the structure of the temperature control component (temperature control unit) of the present invention.

[0114] The control unit 270 controls the temperature control member TM based on the temperatures detected by the temperature sensor TS1 and the temperature detected by the temperature sensor TS2. Specifically, for example, when a substrate S is subjected to film formation across multiple film forming chambers, control is performed so that the temperature of the electrostatic chuck C in the current film forming chamber (the first film forming chamber) approaches the temperature of the mask M in the next film forming chamber (the second film forming chamber). In this case, the temperature of the mask M in the next film forming chamber (the second film forming chamber) is detected using the temperature sensor TS2 in the chamber 200 of the next film forming chamber.

[0115] Specifically, the temperature of the electrostatic chuck C (first electrostatic chuck) in the current film-forming chamber (first film-forming chamber) is monitored by temperature sensor TS1 (first temperature sensor) included in the electrostatic chuck C (first electrostatic chuck). Furthermore, the temperature of the mask M (second mask) in the next film-forming chamber (second film-forming chamber) is detected by temperature sensor TS2 (second temperature sensor) included in the next film-forming chamber (second film-forming chamber). Then, the current applied to the temperature control member TM (first temperature control member) in the current film-forming chamber (first film-forming chamber) is controlled so that the temperature detected by temperature sensor TS1 (first temperature sensor) approaches the temperature detected by temperature sensor TS2 (second temperature sensor).

[0116] Figure 5 Schematic diagram showing an example of temperature control in an organic EL production line. In an organic EL production line, it is sometimes required to make the temperature of the substrate S consistent with the temperature in the chamber 200 in each process or the temperature of the mask M in each process. Figure 5 As shown, in each film forming group 1-1 to 1-5, 1b, the temperature of the mask M may be different due to the difference in film forming conditions. Figure 3 As can be seen from the comparison of the temperature rise of the substrate S in the case of the temperature adjustment control of the present embodiment, the temperature difference between the substrate S and the mask M becomes more significant, particularly in the latter half of the production line.

[0117] According to this embodiment, the temperature of the electrostatic chuck C, that is, the temperature of the substrate S, can be made consistent with the temperature in each chamber 200 and the temperature of the mask M. That is, according to this embodiment, the temperature of the substrate S can be controlled to be consistent with the temperature in each chamber 200 and the temperature of the mask M. Figure 5 The temperatures of the masks M of the film formation groups 1 - 1 to 1 - 5 and 1 b shown are the same.

[0118] (Other heat transfer components)

[0119] The magnet plate MP is a member in contact with the electrostatic chuck C. Depending on the specific configuration of the temperature control unit T, it can be understood as a heat transfer member that, together with the electrostatic chuck C, transfers heat between the substrate S and the temperature control member TM. In other words, it can be considered to be included in the structure of the temperature control component of the present invention.

[0120] The magnet plate MP is a magnetic force generating component composed of a base plate BP and multiple magnets MG. The multiple magnets MG are attached to the lower surface of the base plate BP (the surface of the base plate BP facing the electrostatic chuck C) at equal intervals. Each magnet MG is configured as a protrusion protruding from the lower surface of the base plate BP in the Z-axis direction toward the side where the electrostatic chuck C is located, with its front end in contact with the upper surface of the highly thermally conductive sheet HT.

[0121] The plurality of magnets MG attract the mask M toward the substrate S (in the Z-axis direction) by their magnetic force. Their arrangement is not particularly limited, and for example, they may be arranged to correspond to the frame shape of the mask M. In other words, they may not be evenly distributed over the entire area of the upper surface 261 of the electrostatic chuck C, but may be arranged in a biased manner.

[0122] The electrostatic chuck C is a member that contacts the substrate S, the temperature of which is to be controlled. From the perspective of controlling the temperature of the substrate S, it can be understood as a heat transfer member that transfers heat between the substrate S and the temperature control member TM. The electrostatic chuck C is constructed by embedding a positive electrode 251 and a negative electrode 252 in a base material 250 made of, for example, ceramic. The positive electrode 251 and the negative electrode 252 are connected to a power supply 290. A desired voltage is applied to the positive electrode 251 and the negative electrode 252 under the control of the control unit 270, generating a suction force corresponding to the voltage, thereby attracting the substrate S.

[0123] (Structural Features of Temperature Adjustment Unit T1)

[0124] The temperature control unit T1 of this embodiment is configured to control the temperature of the electrostatic chuck C while monitoring the temperature of the electrostatic chuck C and the temperature of the mask M using a temperature control member such as a Peltier element. Furthermore, a highly thermally conductive sheet HT is in contact with the electrostatic chuck C, and the temperature of the electrostatic chuck C is controlled via the highly thermally conductive member (by controlling the temperature of the highly thermally conductive member).

[0125] Furthermore, the temperature control unit T1 is configured such that, in the Z-axis direction (a direction intersecting the attraction surface 260 of the electrostatic chuck C), the mask M, the electrostatic chuck C, the magnet plate MP, and the temperature control components (temperature control member TM, cooling plate CP, etc.) are arranged in this order when viewed from the mask M. This configuration reduces the effect of the magnetic component on the magnet plate MP's attraction to the mask M, even when the temperature control component includes a magnetic component.

[0126] The temperature control unit (cooling unit) used in the film forming apparatus can be configured in a variety of ways. For example, a configuration is also conceivable in which a further cooling member is disposed between the magnet plate MP and the mask M, separate from the temperature control unit described in this embodiment. Even in such a configuration, by adopting the structure of the temperature adjustment unit T1 of this embodiment, at least a portion of the cooling member can be disposed in a position where the effect on the mask adsorption to the magnet plate MP is minimized, thereby achieving the same effects as described above. Of course, by concentrating the temperature control structure in the temperature adjustment unit T1 of this embodiment, the effect of reducing the effect on the mask adsorption to the magnet plate MP can be further enhanced.

[0127] (Temperature adjustment control)

[0128] In temperature control of the electrostatic chuck C using the temperature control unit T1 of this embodiment, the greatest effect is achieved when the magnet plate MP is lowered from a position away from the electrostatic chuck C (a first position) and brought into contact (via the highly thermally conductive sheet HT) with the electrostatic chuck C (a second position). The magnet plate MP is brought into contact (lowered) with the electrostatic chuck C, typically after the aligned substrate S is placed on the mask M during the film formation process, i.e., when the mask M is brought into close contact with the substrate S by the magnetic force of the magnet plate MP.

[0129] In the temperature control unit T1, the timing or period for controlling the temperature control member TM (Peltier element) is typically when the evaporation source 240 releases the film-forming material, that is, when the substrate S is exposed to the highest temperature. Furthermore, after film formation is completed, the magnet plate MP and the electrostatic chuck C may be maintained in contact, that is, the substrate S may be kept in close contact with the mask M. For example, if the film formation apparatus includes a shutter, the shutter may be closed while temperature control is continued. Alternatively, temperature control may not be performed during film formation, and temperature control may be initiated only after film formation is completed, with the magnet plate MP and the electrostatic chuck C maintained in contact.

[0130] Alternatively, temperature adjustment by the temperature control member TM (Peltier element) may be performed at a different timing than during film formation. For example, the magnet plate MP may be brought into contact with the electrostatic chuck C during transport of the substrate S before and after film formation to control the temperature of the electrostatic chuck C. In other words, the magnet plate MP may be brought into contact (lowered) with the electrostatic chuck C without the mask M being attracted to the substrate S, and temperature adjustment by the temperature control member TM (Peltier element) may be performed.

[0131] Furthermore, as in Example 2 described later, in a configuration in which a temperature adjustment member TM composed of a Peltier element is directly attached to the electrostatic chuck C, the temperature of the electrostatic chuck C can be adjusted at any timing regardless of the operating status of the film forming apparatus.

[0132] In addition, the temperature adjustment control by the temperature adjustment unit T1 is typically to cool the substrate S. However, for example, Figure 5 In the film forming line shown, when the temperature of the substrate S is lower than the temperature of the mask M, the electrostatic chuck C may be heated by the operation of the Peltier element of the temperature control member TM. Therefore, the temperature control member TM is not limited to the Peltier element, and a heater composed of a heating wire or the like may also be used.

[0133] In addition, as mentioned above, one of the purposes of the temperature adjustment control by the temperature adjustment unit T1 is to Figure 5 In the process of a series of film forming lines (multiple film forming operations across multiple film forming chambers), the temperature of the substrate S is adjusted according to the temperature of the mask M used in the next film forming. However, the purpose of temperature control by the temperature adjustment unit T1 is not limited to the above purpose.

[0134] For example, depending on the characteristics of the film deposited on the substrate S, there may be a need to minimize the temperature of the substrate S or to maximize the temperature of the substrate S. In such cases, in a single film forming chamber, the temperature of the electrostatic chuck C (i.e., the substrate S) can be controlled by the temperature control unit T1 based on the detected temperature of the electrostatic chuck C.

[0135] Furthermore, the cooling or heating of the Peltier element causes the temperature of the component in contact with the temperature control member TM to change, and this, in turn, causes the temperature of other components in contact with the component to change in a chain reaction through heat conduction. Specifically, by cooling the magnet plate MP with the temperature control member TM, the high thermal conductivity sheet HT in contact with the magnet plate MP, the electrostatic chuck C in contact with the high thermal conductivity sheet HT, and the substrate S in contact with the electrostatic chuck C are sequentially cooled. Furthermore, the mask M in contact with the substrate S is naturally also cooled (the temperature control member TM is a temperature control unit that controls the temperature of each of these components).

[0136] The heat source in the film formation chamber is radiant heat from the vaporized film-forming material and the evaporation source, which primarily heats the mask M and substrate S. While the temperatures of the substrate S and mask M ultimately fluctuate due to the difference between the amount of heating energy and the cooling capacity of the electrostatic chuck C, and a temperature gradient may occur with the temperature higher toward the evaporation source, the temperature rise of the mask M is suppressed along with the substrate S compared to a case where the temperature control unit T1 of this embodiment is not used. In other words, while temperature control (cooling) of the substrate S is the primary goal of the temperature control unit T1 of this embodiment, it can also be said that temperature rise of the mask M is indirectly suppressed.

[0137] So, for example with Figure 5 Unlike the film forming lines shown, when it is desired to control the temperatures of the masks M in the respective film forming chambers to the same temperature, the temperature adjustment control by the temperature adjustment unit T1 of this embodiment may be utilized.

[0138] <Example 2>

[0139] Reference Figure 6 、 Figure 7 , the temperature adjustment unit T2 of Example 2 of the present invention is described. Figure 6 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a second embodiment of the present invention. Figure 7 is with Figure 6 AA arrow view of FIG, and is a schematic top view showing another example of the arrangement structure and control structure of multiple temperature adjustment components.

[0140] Here, in the configuration of Example 2, only the differences from the configuration of Example 1 will be described. In the configuration of Example 2, the same components as those of Example 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0141] In the temperature control unit T1 of the first embodiment, the temperature control member TM is not in direct contact with the electrostatic chuck C, but controls the temperature of the electrostatic chuck C via the magnet plate MP and the high thermal conductivity sheet HT. Figure 6 As shown, the temperature adjustment member TM is arranged to be in direct contact with the upper surface 261 of the electrostatic chuck C.

[0142] Specifically, in the temperature control unit T2 of Example 2, the temperature control member TM, comprised of a Peltier element, directly recovers the heat energy transferred to the electrostatic chuck C, cooling the electrostatic chuck C. Meanwhile, the heat energy is radiated to the magnet plate MP. The heat energy transferred to the magnet plate MP is recovered by the water channel WP provided in the cooling plate CP. This allows the substrate S to be transported to the next step while minimizing temperature increases.

[0143] like Figure 7 As shown, the temperature control unit T2 of Example 2 is constructed by dividing the upper surface 261 of the electrostatic chuck C into a plurality of regions 261-1 to 261-4, and disposing independent temperature control components TM1 to TM4 in each of the divided regions 261-1 to 261-4. Furthermore, the temperature control components TM1 to TM4 are configured to be independently controllable. In other words, a plurality of power supply circuits TC1 to TC4 are provided, corresponding to the plurality of temperature control components TM1 to TM4. Each power supply circuit TC1 to TC4 has a structure in which two power supplies and two switches are connected in parallel, and is configured to switch the direction of the current input to the Peltier element, thereby independently switching the Peltier element between a heating state and a cooling state.

[0144] Furthermore, the temperature control unit T2 of Example 2 is configured to include a plurality of temperature sensors TS1-1 to TS1-4, serving as temperature detection means for the electrostatic chuck C, corresponding to the plurality of divided regions 261-1 to 261-4 and the plurality of temperature control members TM1 to TM4. Specifically, the electrostatic chuck C is divided into a plurality of regions, and a temperature sensor is provided in each region to monitor the temperature of each region. Current is passed through the Peltier element to control the temperature of the electrostatic chuck C so that each region reaches a desired temperature. This allows temperature control to be performed in accordance with the temperature difference between the divided regions 261-1 to 261-4, for example, to minimize the temperature difference.

[0145] Furthermore, as an additional structure, in order to improve heat transfer between the temperature regulating member TM and the magnet plate MP, for example, a highly thermally conductive member may be disposed in the space between the plurality of magnets MG, and the temperature regulating member TM may be connected to the bottom plate BP via the highly thermally conductive member.

[0146] In addition, the upper surface 261 of the electrostatic suction cup C is divided into four divided areas 261-1 to 261-4, two in the vertical and two in the horizontal, and four temperature adjustment components TM1 to TM4, four power circuit parts TC1 to TC4, and four temperature sensors TS1-1 to TS1-4 are provided respectively, but the number of divisions and the division method are not limited to this.

[0147] <Example 3>

[0148] Reference Figure 8 , the temperature adjustment unit T3 of Example 3 of the present invention is described. Figure 8 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a third embodiment of the present invention.

[0149] Here, in the configuration of Example 3, only the differences from the configurations of Examples 1 and 2 will be described. In the configuration of Example 3, the same components as those of Examples 1 and 2 are denoted by the same reference numerals, and description thereof will be omitted.

[0150] The temperature control unit T3 of Example 3 is constructed by attaching a non-magnetic metal member MM, which has a higher thermal conductivity than both the electrostatic chuck C and the magnet plate MP, to the bottom plate BP of the magnet plate MP. Instead of providing the non-magnetic metal member MM, the temperature control unit T3 of Example 3 omits the high thermal conductivity sheet HT of the temperature control unit T1 of Example 1.

[0151] As described above, the multiple magnets MG included in the magnet plate MP may not be evenly distributed across the entire area of the upper surface 261 of the electrostatic chuck C, but may be skewed. Furthermore, from the perspective of temperature transfer, this arrangement may fail to ensure a sufficient contact area. Specifically, within the magnet plate MP, at least the magnets MG are primarily positioned to ensure magnetic attraction of the mask M. Therefore, it is preferable to arrange a separate member from the magnets MG, primarily focused on ensuring heat transfer.

[0152] With this in mind, the temperature control unit T3 of Example 3 arranges multiple non-magnetic metal members MM in the space between the multiple magnets MG on the surface of the magnet plate MP facing the electrostatic chuck C. Each non-magnetic metal member MM protrudes from the surface of the magnet MG toward the electrostatic chuck C. Therefore, when the magnet plate MP descends, the front end surfaces of the non-magnetic metal members MM come into contact with the upper surface 261 of the electrostatic chuck C. Although a gap is formed between the magnets MG and the upper surface 261 of the electrostatic chuck C, the height of the magnets MG is configured to ensure sufficient magnetic attraction to the mask M.

[0153] In addition, in the temperature control unit T3 of embodiment 3, the high thermal conductivity sheet HT of the temperature control unit T1 of embodiment 1 can also be configured to be arranged on the upper surface 261 of the electrostatic chuck C, and the non-magnetic metal component MM can be connected to the electrostatic chuck C via the high thermal conductivity sheet HT.

[0154] <Example 4>

[0155] Reference Figure 9 , the temperature adjustment unit T4 of Example 4 of the present invention is described. Figure 9 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a fourth embodiment of the present invention.

[0156] Here, in the structure of Example 4, only the differences from the structures of Examples 1 to 3 will be described. In the structure of Example 4, the same components as those of Examples 1 to 3 are denoted by the same reference numerals, and the description thereof will be omitted.

[0157] As described above, the cooling plate CP is an optional structure in the temperature adjustment unit T. Therefore, in the temperature adjustment unit T4 of the embodiment 4, different from the embodiments 1 to 3, as shown in FIG. Figure 9 As shown, a structure is adopted in which the cooling plate CP is omitted. If the temperature regulation of the substrate S can be sufficiently provided by the temperature regulation capability of the temperature regulation member TM, a cost advantage can be obtained by omitting the cooling plate CP.

[0158] Furthermore, as an additional structure, in order to improve heat transfer between the temperature regulating member TM and the magnet plate MP, for example, a highly thermally conductive member may be disposed in the space between the plurality of magnets MG, and the temperature regulating member TM may be connected to the bottom plate BP via the highly thermally conductive member.

[0159] <Example 5>

[0160] Reference Figure 10 , the temperature adjustment unit T5 of Example 5 of the present invention is described. Figure 10 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a fifth embodiment of the present invention.

[0161] Here, in the structure of Example 5, only the differences from the structures of Examples 1 to 4 will be described. In the structure of Example 5, the same components as those of Examples 1 to 4 are denoted by the same reference numerals, and the description thereof will be omitted.

[0162] The temperature control unit T5 of Example 5 is configured as a cooling element, replacing the temperature control member TM using a Peltier element in the temperature control units T1 to T4 of Examples 1 to 4. A water channel WP, serving as a cooling pipe through which a refrigerant flows, is provided on the bottom plate BP of the magnet plate MP. In the temperature control unit T5 of Example 5, cooling water, serving as a refrigerant, circulates through the water channel WP as a temperature control element embedded in the magnet plate MP. This cools the bottom plate BP and exchanges heat with the electrostatic chuck C via the highly thermally conductive sheet HT and magnets MG.

[0163] For a water-cooled temperature control structure, in a film forming environment or film forming device structure that does not require high responsiveness or fine-tuning, cost advantages can be obtained by omitting the temperature control component TM (and the power supply circuit part that controls the temperature control component TM).

[0164] Furthermore, as an additional structure, in order to improve heat transfer between the temperature regulating member TM and the magnet plate MP, for example, a highly thermally conductive member may be disposed in the space between the plurality of magnets MG, and the temperature regulating member TM may be connected to the bottom plate BP via the highly thermally conductive member.

[0165] <Example 6>

[0166] Reference Figure 11 , the temperature adjustment unit T6 of Example 6 of the present invention is described. Figure 11 It is a schematic cross-sectional view illustrating the structure of a temperature adjustment mechanism according to a sixth embodiment of the present invention.

[0167] Here, in the structure of Example 6, only the differences from the structures of Examples 1 to 5 will be described. In the structure of Example 6, the same components as those of Examples 1 to 5 are denoted by the same reference numerals, and the description thereof will be omitted.

[0168] The temperature control unit T6 of the sixth embodiment is configured to include a heat sink HS as a cooling element, replacing the temperature control member TM using a Peltier element and the cooling plate CP in the temperature control unit T of the other embodiments. The heat sink HS is provided on the upper surface of the bottom plate BP of the magnet plate MP (the surface opposite the surface facing the electrostatic chuck C).

[0169] The heat sink HS has a plurality of protrusions on the surface opposite to the contact surface with the base plate BP. The surface area of the concave-convex shape on the side with the protrusions is larger than the area of the contact surface (heat sink structure). Specifically, the heat sink HS is configured so that heat transferred to the surface of the electrostatic chuck C in contact with the base plate BP is dissipated through the concave-convex surface opposite to the contact surface, thereby promoting cooling of the electrostatic chuck C.

[0170] The specific structure of the heat dissipation portion of the heat sink HS is not particularly limited. The protrusions of the heat dissipation portion may be, for example, plate-shaped, columnar, or other shapes. Furthermore, a combination of multiple protrusions of different shapes is also possible.

[0171] The temperature control unit T6 of this embodiment is particularly suitable for film formation apparatuses in which the amount of heat stored by vapor deposition is equal to or less than the amount of heat dissipated from the magnet plate MP. Specifically, the temperature control unit T6 of this embodiment, which simply adds a heat sink HS to the magnet plate MP, can achieve effective cooling depending on the film formation conditions.

[0172] Furthermore, as an additional structure, in order to improve heat transfer between the temperature regulating member TM and the magnet plate MP, for example, a highly thermally conductive member may be disposed in the space between the plurality of magnets MG, and the temperature regulating member TM may be connected to the bottom plate BP via the highly thermally conductive member.

[0173] The various structures of Examples 1 to 6 described above can be combined arbitrarily. Furthermore, the cooling components of each embodiment can be replaced with heating components or temperature control components that perform both heating and cooling. For example, a heating wire heater can be used, or by applying current in opposite directions to a Peltier element, the cooling and heating of the temperature control object can be switched.

[0174] <Method for manufacturing electronic devices>

[0175] Next, an example of a method for manufacturing an electronic device using the film-forming apparatus of this embodiment will be described. Hereinafter, the structure of an organic EL display device will be described as an example of an electronic device, and a method for manufacturing the organic EL display device will be described as an example.

[0176] First, the organic EL display device to be manufactured will be described. Figure 12 (a) is an overall view of the organic EL display device 700. Figure 12 (b) shows the cross-sectional structure of one pixel.

[0177] like Figure 12As shown in (a), in the display area 701 of the organic EL display device 700, a plurality of pixels 702 each having a plurality of light-emitting elements are arranged in a matrix. Each light-emitting element has a structure having an organic layer sandwiched by a pair of electrodes, and the details will be described later. In addition, the pixel referred to here refers to the minimum unit that can display the desired color in the display area 701. In the case of the organic EL display device of this embodiment, the pixel 702 is composed of a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit light that is different from each other. The pixel 702 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, as long as it is at least one color, and is not particularly limited.

[0178] Figure 12 (b) Yes Figure 12 (a) Schematic diagram of a partial cross section at line BB. The pixel 702 is composed of a plurality of light-emitting elements, each of which has a first electrode (anode) 704, a hole transport layer 705, any one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among them, the hole transport layer 705, the light-emitting layers 706R, 706G, 706B, and the electron transport layer 707 are equivalent to organic layers. In addition, in this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed into patterns corresponding to the light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0179] The first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, electron transport layer 707, and second electrode 708 can be formed commonly across the multiple light-emitting elements 702R, 702G, and 702B, or individually for each light-emitting element. Furthermore, an insulating layer 709 is provided between the first electrode 704 and the second electrode 708 to prevent short circuits caused by foreign matter. Furthermore, since organic EL layers are degraded by moisture and oxygen, a protective layer 710 is provided to protect the organic EL elements from moisture and oxygen.

[0180] exist Figure 12In (b), the hole transport layer 705 and the electron transport layer 707 are shown as a single layer. However, depending on the structure of the organic EL display element, they can also be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer can be formed between the first electrode 704 and the hole transport layer 705. The hole injection layer has an energy band structure that allows for smooth injection of holes from the first electrode 704 into the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

[0181] Next, an example of a method for manufacturing an organic EL display device will be described in detail.

[0182] First, a substrate (mother glass) 703 on which a circuit (not shown) for driving the organic EL display device and a first electrode 704 are formed is prepared.

[0183] Acrylic resin is formed by spin coating on the substrate 703 having the first electrode 704 formed thereon, and then patterned by photolithography to form an opening in the portion where the first electrode 704 is formed, thereby forming an insulating layer 709. This opening corresponds to the light emitting region where the light emitting element actually emits light.

[0184] The substrate 703, on which the insulating layer 709 has been patterned, is placed on a substrate carrier equipped with an adhesive member. The adhesive member holds the substrate 703 in place. The substrate is then loaded into the first organic material film-forming apparatus and, after being turned over, a hole transport layer 705 is formed as a common layer on the first electrode 704 in the display area. The hole transport layer 705 is formed by vacuum evaporation. In practice, since the hole transport layer 705 is formed larger than the display area 701, a high-definition mask is not required.

[0185] Next, the substrate 703, on which the hole transport layer 705 has been formed, is loaded into the second organic material film-forming apparatus. The substrate and the mask are aligned, the substrate is placed on the mask, and a red light-emitting layer 706R is formed on the portion of the substrate 703 where the red light-emitting element is located.

[0186] Similar to the film formation of the light-emitting layer 706R, the third organic material film-forming apparatus forms the light-emitting layer 706G, which emits green light, and the fourth organic material film-forming apparatus forms the light-emitting layer 706B, which emits blue light. After the film formation of the light-emitting layers 706R, 706G, and 706B is completed, the fifth film-forming apparatus forms the electron transport layer 707 over the entire display area 701. The electron transport layer 707 is formed as a common layer for the three color light-emitting layers 706R, 706G, and 706B.

[0187] The substrate on which the electron transport layer 707 has been formed is moved in a metallic vapor deposition material film forming apparatus to form a second electrode 708 .

[0188] The device is then moved to a plasma CVD apparatus to deposit a protective layer 710, completing the film deposition process on substrate 703. After flipping, the adhesive member is peeled off from substrate 703, separating substrate 703 from the substrate carrier. Afterwards, the device is cut to complete the organic EL display device 700.

[0189] From the time the substrate 703, on which the insulating layer 709 has been patterned, is loaded into the film forming apparatus until the protective layer 710 is formed, exposure to an atmosphere containing moisture and oxygen may cause degradation of the light-emitting layer composed of the organic EL material. Therefore, in this embodiment, the loading and unloading of substrates between film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

[0190] Description of Reference Numerals

[0191] 1...film forming apparatus, S...substrate, M...mask, C...electrostatic chuck, TM...temperature adjustment member, MP...magnet plate, CP...cooling plate.

Claims

1. A substrate holding device used in a film forming device for forming a film on a substrate, characterized in that: The substrate holding device comprises: an electrostatic chuck for absorbing the substrate; a member in contact with the electrostatic chuck, the member having a thermal conductivity higher than a thermal conductivity of the electrostatic chuck; as well as A temperature control component controls the temperature of the component.

2. The substrate holding device according to claim 1, wherein The substrate holding device further includes a magnetic force generating member that generates a magnetic force to attract a mask toward the substrate attracted to the electrostatic chuck. The temperature control member controls the temperature of the member via the magnetic force generating member in contact with the member.

3. The substrate holding device according to claim 2, wherein: The temperature control member is arranged in contact with the magnetic force generating member or is embedded in the magnetic force generating member.

4. The substrate holding device according to claim 2, wherein: The member has a higher thermal conductivity than the magnetic force generating component.

5. The substrate holding device according to claim 1, wherein: The electrostatic chuck comprises a substrate and an electrode embedded in the substrate. The thermal conductivity of the member is higher than the thermal conductivity of the base material.

6. The substrate holding device according to any one of claims 1 to 5, wherein: The temperature control component includes: a temperature regulating member including a Peltier element; a current supply unit configured to cause current to flow through the Peltier element; and a control unit that controls the current flowing through the Peltier element by the current supply unit, The control unit switches between a state in which the member heats the electrostatic chuck and a state in which the member cools the electrostatic chuck by controlling the current supply unit to change a direction of the current flowing through the Peltier element.

7. The substrate holding device according to any one of claims 1 to 5, wherein: The temperature control component is a cooling pipe through which refrigerant flows.

8. The substrate holding device according to any one of claims 1 to 5, wherein: The temperature control component is a member having a heat dissipation shape.

9. The substrate holding device according to any one of claims 1 to 5, wherein: The temperature control component is a heater.

10. The substrate holding device according to any one of claims 1 to 5, wherein: An area of a portion of the member that contacts the electrostatic chuck is larger than an area of the temperature control component projected in a direction intersecting a suction surface of the electrostatic chuck for the substrate.

11. The substrate holding device according to any one of claims 2 to 4, wherein: An area of a portion of the member that contacts the electrostatic chuck is larger than an area of the magnetic force generating member projected in a direction intersecting a suction surface of the electrostatic chuck for the substrate.

12. The substrate holding device according to any one of claims 1 to 5, wherein: An area of a portion of the member in contact with the electrostatic chuck is equal to or greater than 50% of an area of the electrostatic chuck projected in a direction intersecting a suction surface of the electrostatic chuck holding the substrate.

13. A film forming apparatus comprising: chamber; an evaporation source, the evaporation source being disposed in the chamber; an electrostatic chuck disposed in the chamber and configured to adsorb the substrate; and a mask bonded to the film-forming surface of the substrate adsorbed on the electrostatic chuck, It is characterized by: The film forming device comprises: a member in contact with the electrostatic chuck, the member having a thermal conductivity higher than a thermal conductivity of the electrostatic chuck; as well as A temperature control component controls the temperature of the component.

14. The film forming apparatus according to claim 13, wherein: The film forming apparatus further includes a magnetic force generating member that generates a magnetic force that attracts the mask toward the film forming surface. The temperature control member controls the temperature of the member via the magnetic force generating member in contact with the member.

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