A topcon solar cell and a preparation method thereof
CN120512947BActive Publication Date: 2026-06-30HUAIAN JIETAI NEW ENERGY TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAIAN JIETAI NEW ENERGY TECHNOLOGY CO LTD
- Filing Date
- 2025-05-23
- Publication Date
- 2026-06-30
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Figure CN120512947B_ABST
Abstract
The application relates to the technical field of solar cells, in particular to a TOPCon solar cell and a preparation method thereof. The preparation method comprises the following steps: front texturing, boron diffusion, BSG removal + alkali etching, back surface insulating layer deposition, local slotting on the insulating layer, sequentially depositing a tunneling oxide layer and a polysilicon layer in the local slotting area, phosphorus diffusion, PSG removal + RCA, depositing a passivation layer and an anti-reflection film layer, and screen printing. According to the method, the insulating layer is deposited on the back surface of a silicon wafer, local slotting is performed, the tunneling oxide layer / polysilicon layer is deposited in the slotting area, and an electrode is printed, the contactless passivation is reserved, the carrier transmission path is optimized, the recombination loss is reduced, the passivation performance of the cell prepared by the method can be further optimized, and the conversion efficiency of the cell is improved.
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