一种基于阶梯式金刚线切割的12吋半导体硅片加工方法
By using a stepped diamond wire cutting method, which employs staged cutting of different thicknesses of diamond wire and a chamfering process, the problem of vibration instability during diamond wire cutting is solved, improving the cutting accuracy and surface quality of 12-inch semiconductor silicon wafers and reducing warpage and surface defects.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MCL ELECTRONICS MATERIALS
- Filing Date
- 2025-05-30
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional diamond wire cutting methods suffer from vibration instability during the feed stage, leading to problems such as cut deviation and silicon wafer warping, making it difficult to meet the high-quality requirements of large-size semiconductor silicon wafers.
The stepped diamond wire cutting method is adopted. First, a thicker diamond wire with higher tension is used to cut the initial groove. Then, a thinner diamond wire with lower tension is used for cutting. The corresponding part of the initial groove is removed by a chamfering process to ensure cutting stability and silicon wafer quality.
It significantly reduces silicon wafer warpage, improves cutting accuracy and surface quality, reduces surface defects, and increases silicon wafer yield.
Smart Images
Figure CN120516859B_ABST