Wafer plasma processing apparatus

Abstract

The application provides a wafer plasma processing device, which relates to the technical field of semiconductor equipment and comprises a process cavity, the inner wall of which extends radially with n first supporting bases, n >= 1; a lower electrode support seat located in the interior of the process cavity, the outer wall of which extends radially with n second supporting bases corresponding to the first supporting bases one by one, and each second supporting base is oppositely arranged with the corresponding first supporting base; a cantilever assembly comprising 1 supporting arm and n auxiliary arms which are uniformly and spacedly distributed around the lower electrode support seat; wherein the lower electrode support seat is connected with the process cavity through the supporting arm, and each pair of oppositely arranged first supporting base and second supporting base cooperatively bears an auxiliary arm. Through the design of symmetric cantilever, solid arm and symmetric conductive path, the application improves the flow field uniformity, the air exchange efficiency and the electric field uniformity.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor equipment, and in particular to a wafer plasma processing apparatus. Background Technology

[0002] Dry etching equipment, such as ICP / CCP, imposes requirements on etching morphology characteristics, marking size, etching rate, and on-wafer uniformity. The realization of these requirements is all related to the process chamber structure and device configuration.

[0003] Taking an ICP etching apparatus as an example, the top of the process chamber is equipped with a dielectric window, an inlet structure, and an upper electrode assembly. The dielectric window is located on top of the process chamber, the inlet structure is used to supply process gas into the process chamber, and the upper electrode assembly is located above the dielectric window to feed radio frequency (RF) into the process chamber. This RF excitation generates plasma from the process gas, which then etches the wafer within the process chamber. In semiconductor processes, the symmetry and uniformity of the flow field and electric field within the process chamber affect the etching uniformity of the wafer.

[0004] However, in a typical ICP etching apparatus, the process chamber is equipped with a single support arm connected to the side wall of the lower electrode support. This single support arm causes asymmetry and non-uniformity in the flow field and electric field within the process chamber, which affects the etching uniformity and consequently the product yield. Summary of the Invention

[0005] The purpose of this invention is to provide a wafer plasma processing apparatus to solve at least one technical problem existing in the prior art.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] A wafer plasma processing apparatus, comprising:

[0008] The process cavity has n first support platforms extending radially along its inner wall, where n≥1;

[0009] The lower electrode support is located inside the process cavity. Its outer wall has n second supports that correspond one-to-one with each first support. Each second support is arranged opposite to the corresponding first support.

[0010] A cantilever assembly comprising one support arm and n auxiliary arms evenly spaced around the lower electrode support base in a circumferential direction;

[0011] The lower electrode support is connected to the process cavity via a support arm, and each pair of oppositely arranged first and second supports cooperate to support an auxiliary arm.

[0012] In some embodiments, each auxiliary arm is a solid arm;

[0013] The support arm consists of a solid part and a channel part, with the solid part surrounding the channel part, which is the wiring channel.

[0014] In some embodiments, a conductive path is formed between the lower electrode support and the process cavity, the conductive path including, in sequence:

[0015] The second support platform, the second induction coil disposed between the auxiliary arm and the second support platform, the auxiliary arm, the first induction coil disposed between the auxiliary arm and the first support platform, and the first support platform.

[0016] In some embodiments, the auxiliary arm is fixedly connected to the first platform by at least one first fastener; the auxiliary arm is fixedly connected to the second platform by at least one second fastener.

[0017] In some embodiments, a second fastener is threaded through the auxiliary arm and onto the second support in the height direction. The second fastener is configured to adjust the level of the lower electrode support by adjusting the depth to which it is screwed into the second support.

[0018] In some embodiments, the process cavity includes a chamber body and a door assembly, wherein:

[0019] The chamber body has an opening.

[0020] The door assembly is used to cover the opening, and the lower electrode support is connected to the door assembly via a support arm.

[0021] In some embodiments, the door assembly includes a door panel and a chamber fitting block, the chamber fitting block being mounted on the side of the door panel facing the lower electrode support, and the chamber fitting block being able to be embedded in the opening of the chamber body;

[0022] The inner surface of the cavity matching block and the inner wall surface of the cavity body are concentric arc surfaces with the same diameter. When the cavity matching block is embedded into the cavity body, the inner surface of the cavity matching block and the inner wall surface of the cavity body form a complementary continuous transition surface.

[0023] In some embodiments, a third induction coil is provided between the chamber conforming block and the door panel.

[0024] In some embodiments, a first channel is provided in the middle of the chamber shaping block, and the support arm passes through the first channel to connect with the door panel.

[0025] In some embodiments, a fourth induction coil is provided between the support arm and the door panel, and at least one first sealing ring is provided at the joint surface between the support arm and the door panel.

[0026] In some embodiments, the door assembly includes two guide rods, and the chamber body has guide holes corresponding to each guide rod, with each guide rod slidably fitted into the corresponding guide hole.

[0027] In some embodiments, the wafer plasma processing apparatus further includes an adjustment base;

[0028] The adjusting base is installed at the top of the process cavity, and a second sealing ring is provided between the bottom surface of the adjusting base and the top surface of the process cavity.

[0029] In some embodiments, the wafer plasma processing apparatus further includes an annular liner installed in the process chamber;

[0030] The top wall of the process chamber has an annular recess that extends radially on the inner side.

[0031] The top of the annular liner is provided with a radially extending liner flange, which is embedded in the annular recess.

[0032] A plasma shielding ring is provided between the top surface of the inner flange and the bottom surface of the adjusting base.

[0033] In some embodiments, the wafer plasma processing apparatus further includes a dielectric window mounted on an adjustment base, wherein a third sealing ring is provided at the contact point between the dielectric window and the adjustment base;

[0034] The adjustment base has a frustum-shaped inner cavity, and the cross-sectional area of ​​the frustum-shaped inner cavity gradually increases from top to bottom.

[0035] In some embodiments, an inner ring grounding ring is provided between the annular inner liner and the lower electrode support, and the annular inner liner is grounded to the lower electrode support through the inner ring grounding ring.

[0036] In some embodiments, the support arm and n auxiliary arms are at the same height, and both the support arm and n auxiliary arms are located below the annular liner.

[0037] In some embodiments, the wafer plasma processing apparatus further includes an insulating ring and an electrostatic chuck;

[0038] An insulating ring is mounted on the top of the lower electrode support, and an electrostatic chuck is mounted on the insulating ring.

[0039] Compared with the prior art, the present invention has the following advantages:

[0040] 1. The present invention features a highly symmetrical cantilever assembly, which includes one support arm and n auxiliary arms, evenly distributed between the process cavity and the lower electrode support, effectively avoiding the flow field and electric field asymmetry problems caused by the traditional single-arm structure; this symmetrical layout improves the uniformity of plasma, enhances the etching uniformity of the wafer, and improves the product yield.

[0041] 2. In this invention, both the support arm and the auxiliary arm are solid arm designs. Compared with the hollow arm in the prior art, the solid arm can occupy more internal space of the process cavity, reduce the excess space, improve the ventilation efficiency, and shorten the process cycle.

[0042] 3. The present invention adjusts the level of the lower electrode support by screwing the second fastener into the second support platform. Compared with the traditional single-arm structure, this design can adjust the level of the lower electrode support more conveniently.

[0043] 4. By cooperating with the first and second induction coils, the present invention forms n+1 uniformly distributed conductive paths between the lower electrode support and the process cavity, thereby improving the uniformity of the plasma electric field in the circumferential direction of the lower electrode support.

[0044] 5. In this invention, the door assembly forms a drawer-type mating structure with the chamber body through the guide rod. The lower electrode support base, support arm, and door assembly can be moved out of or into the chamber body as a whole, which facilitates the maintenance of the lower electrode support base.

[0045] 6. In this invention, the inner surface of the chamber fitting block and the inner wall surface of the process cavity form a closed and complementary continuous transition surface when the chamber fitting block is embedded in the chamber body, which ensures the uniformity of the flow field in the process cavity.

[0046] 7. In this invention, only one sealing ring needs to be set between the adjustment base and the process cavity. The inner flange of the annular liner does not need to participate in the sealing, which simplifies the sealing structure, reduces the original two leakage points to one, reduces the risk of leakage, and improves the sealing reliability of the equipment. Attached Figure Description

[0047] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0048] Figure 1 This is a cross-sectional view of the wafer plasma processing apparatus in an embodiment of this application;

[0049] Figure 2 This is a top view of the wafer plasma processing apparatus in this embodiment of the application without the installation of the adjustment base, dielectric window, and annular liner.

[0050] Figure 3 This is a three-dimensional structural diagram of the wafer plasma processing apparatus in this application embodiment without the installation of the adjustment base, dielectric window and annular liner;

[0051] Figure 4 This is a schematic diagram showing the installation of the auxiliary arm and the first / second support platform in the wafer plasma processing apparatus according to an embodiment of this application.

[0052] Figure 5 This is a schematic diagram of the structure of the auxiliary arm in the wafer plasma processing apparatus in the embodiments of this application;

[0053] Figure 6 This is a three-dimensional structural diagram of the wafer plasma processing apparatus in this application embodiment without the installation of the adjustment base and dielectric window;

[0054] Figure 7 This is a top view of the wafer plasma processing apparatus in this embodiment of the application without the adjustment base and dielectric window installed;

[0055] Figure 8 This is a schematic diagram of the lower electrode support being moved out of the chamber body in an embodiment of this application;

[0056] Figure 9 This is a schematic diagram of the structure of the door plate and the chamber matching block in the wafer plasma processing device in the embodiments of this application;

[0057] Figure 10 This is a schematic diagram of the installation of the support arm and door assembly in the wafer plasma processing apparatus of this application embodiment;

[0058] Figure 11 This is a three-dimensional structural diagram of the gate assembly in the wafer plasma processing apparatus according to an embodiment of this application;

[0059] Figure 12 This is a partial cross-sectional schematic diagram of the wafer plasma processing apparatus in an embodiment of this application;

[0060] Figures 1 to 12 Includes:

[0061] Process cavity 1: First support platform 101, first positioning pin 1011, annular recessed platform 102, cavity body 11, opening 111, guide hole 112, door assembly 12, door panel 121, third positioning pin 1211, cavity matching block 122, first channel 1221, guide rod 123.

[0062] Lower electrode support 2: second support 201, second positioning pin 2011;

[0063] Cantilever assembly 3: support arm 31, auxiliary arm 32, first positioning groove 321, second positioning groove 322, first mounting hole 323, second mounting hole 324, first positioning hole 325, second positioning hole 326;

[0064] First induction coil 4; Second induction coil 5; First fastener 6; Second fastener 7; Third induction coil 8; Fourth induction coil 9; First sealing ring 10; Adjustment base 11; Second sealing ring 12;

[0065] Annular liner 13: liner flange 131, gas equalization ring 132, gas passage 1321;

[0066] 14. Plasma shielding ring; 15. Medium window; 16. Third sealing ring; 17. Inner liner grounding ring; 18. Insulating ring; 19. Electrostatic chuck. Detailed Implementation

[0067] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0068] like Figure 1-3 As shown, a wafer plasma processing apparatus includes:

[0069] The process cavity 1 has n first support platforms 101 extending radially along its inner wall, where n ≥ 1;

[0070] The lower electrode support 2 is located inside the process cavity 1. Its outer wall has n second supports 201 that correspond one-to-one with each first support 101. Each second support 201 is arranged opposite to the corresponding first support 101.

[0071] The cantilever assembly 3 includes one support arm 31 and n auxiliary arms 32 that are evenly spaced around the lower electrode support 2 in a circumferential direction.

[0072] The lower electrode support 2 is connected to the process cavity 1 via a support arm 31, and each pair of oppositely arranged first and second supports 101 cooperate to support an auxiliary arm 32.

[0073] By uniformly arranging n auxiliary arms 32 and 1 support arm 31 between the inner wall of the process cavity 1 and the outer wall of the lower electrode support 2, the cantilever assembly 3 of the present invention forms a highly symmetrical structure. Compared with the traditional single support arm design, this symmetrical layout has the following significant advantages:

[0074] The highly symmetrical cantilever assembly 3 effectively avoids the flow field and electric field asymmetry problems caused by traditional single-arm structures, ensuring a more uniform distribution of airflow in the cavity; the symmetrical flow field distribution improves the uniformity of plasma, thereby significantly improving the etching uniformity of the wafer, reducing etching depth deviation, and improving product yield.

[0075] In addition, the first support platform 101 and the second support platform 201 serve as the supporting structure of the cantilever assembly 3. Each pair of oppositely arranged first support platforms 101 and second support platforms 201 cooperate to support one auxiliary arm 32, making the positioning and installation of the auxiliary arm 32 more convenient. This ensures that the position of each auxiliary arm 32 is accurate and that it is stably supported, thereby improving the overall structural stability of the cantilever assembly 3.

[0076] Optional, such as Figure 2 As shown, there are three auxiliary arms 32 and one support arm 31. The three auxiliary arms 32 and one support arm 31 form a centrally symmetrical cantilever assembly 3.

[0077] Optionally, the shape of the portion of the support arm 31 located in the inner cavity of the process chamber 1 is the same as or similar to the shape of each auxiliary arm 32.

[0078] Optionally, each auxiliary arm 32 is a solid structure (solid arm);

[0079] The support arm 31 includes a solid part and a channel part, with the solid part surrounding the channel part, which is a wiring channel.

[0080] Both the support arm 31 and the auxiliary arm 32 of this application are solid structures, which have at least the following two beneficial effects:

[0081] 1. Compared with the hollow arms made of thin-walled materials in the prior art, the support arm 31 and auxiliary arm 32 of this application are both solid structures, which can better guide the airflow, reduce airflow disturbance, and ensure more uniform plasma distribution, thereby improving the precision and consistency of the etching process.

[0082] II. When using the Bosch ICP process for deep silicon etching, the core lies in forming a deep silicon structure with a high aspect ratio and vertical sidewalls through repeated and alternating etching and passivation cycles. The specific process involves: in the etching stage, etching gas is introduced and plasma is excited to etch the silicon; in the passivation stage, passivation gas is introduced to deposit a protective layer on the surface of the etching tank to suppress lateral etching of the sidewalls of the etching tank. Therefore, rapid switching between etching gas and passivation gas is very important in this process. In this application, the support arm 31 and auxiliary arm 32 of the solid arm are both solid structures, which can occupy more internal space in the process cavity 1 compared to hollow arms. This can reduce the volume of process gas in the process cavity 1, thereby improving the switching efficiency of etching gas and passivation gas and shortening the process cycle.

[0083] Optional, please refer to Figure 4 A conductive path is formed between the lower electrode support 2 and the process cavity 1, and the conductive path includes, in sequence:

[0084] Second base 201, second induction coil 5 disposed between auxiliary arm 32 and second base 201, auxiliary arm 32, first induction coil 4 disposed between auxiliary arm 32 and first base 101, first base 101.

[0085] The second induction coil 5 makes the auxiliary arm 32 make conductive contact with the second platform 201 of the lower electrode support 2; the first induction coil 4 makes the auxiliary arm 32 make conductive contact with the first platform 101 of the process cavity 1; the cooperation of the first induction coil 4 and the second induction coil 5 realizes the conductive connection between the lower electrode support 2 and the process cavity 1, thereby forming n+1 uniformly distributed conductive paths between the lower electrode support 2 and the process cavity 1 as a whole, which helps to improve the uniformity of the plasma electric field in the circumferential direction of the lower electrode support 2.

[0086] Optionally, the bottom surface of the auxiliary arm 32 is provided with a first positioning groove 321 and a second positioning groove 322 at radial intervals.

[0087] The first positioning groove 321 faces the first bearing 101, and the second positioning groove 322 faces the second bearing 201;

[0088] A first induction coil 4 is provided in the first positioning groove 321, and the shape of the first induction coil 4 is adapted to the first positioning groove 321;

[0089] A second induction coil 5 is provided in the second positioning groove 322, and the shape of the second induction coil 5 is adapted to the shape of the second positioning groove 322.

[0090] Optionally, the first induction coil 4 is arc-shaped, and the distance between each position of the arc-shaped first induction coil 4 in the circumferential direction and the outer peripheral wall of the lower electrode support 2 is equal, and the center of curvature of the first induction coil 4 coincides with the center of curvature of the outer peripheral wall of the lower electrode support 2.

[0091] The second induction coil 5 is arc-shaped. The distance between each position of the arc-shaped second induction coil 5 and the outer peripheral wall of the lower electrode support 2 is equal. The center of curvature of the second induction coil 5 coincides with the center of curvature of the outer peripheral wall of the lower electrode support 2.

[0092] By setting the first induction coil 4 and the second induction coil 5 with the same curvature and setting them parallel and spaced apart, the uniformity of the conductive path is ensured, and the uniformity of the plasma electric field in the circumferential direction of the lower electrode support 2 is improved.

[0093] Optional, please continue reading Figure 4 The auxiliary arm 32 is fixedly connected to the first support 101 by at least one first fastener 6; the auxiliary arm 32 is fixedly connected to the second support 201 by at least one second fastener 7.

[0094] In this application, the fastening connection between the auxiliary arm 32 and the first support 101 / second support 201 is achieved by the first fastener 6 and the second fastener 7. The first fastener 6 and the second fastener 7 can be selected by those skilled in the art according to production needs. For example, fasteners such as screws and bolts can be selected.

[0095] The auxiliary arm 32 is fixed to the first support 101 by the first fastener 6, and at the same time, the auxiliary arm 32 is fixed to the second support 201 by the second fastener 7, forming a two-way anchoring structure, which enhances the stability of the cantilever assembly 3.

[0096] Furthermore, the first fastener 6 and the second fastener 7 can provide stable pressing force for the first induction coil 4 and the second induction coil 5, ensuring conductive contact between the auxiliary arm 32 and the second support 201 of the lower electrode support seat 2, and between the auxiliary arm 32 and the first support 101 of the process cavity 1.

[0097] Optional, please continue reading Figure 4 The second fastener 7 passes through the auxiliary arm 32 along the height direction and is threaded to the second support 201. The second fastener 7 is configured to adjust the level of the lower electrode support 2 by adjusting the depth of its screwing into the second support 201.

[0098] Existing technologies make it difficult to effectively adjust the levelness of the lower electrode support 2;

[0099] Unlike existing technologies, this application achieves convenient level adjustment through the cooperation of the second fastener 7 and the second support 201: by adjusting the screwing depth of the second fastener 7 into the second support 201, the level of the lower electrode support 2 can be adjusted.

[0100] Optionally, the auxiliary arm 32 is provided with at least one first mounting hole 323 and at least one second mounting hole 324 through it along the height direction. The auxiliary arm 32 is fixed to the first support 101 by a first fastener 6 passing through the first mounting hole 323, and the auxiliary arm 32 is fixed to the second support 201 by a second fastener 7 passing through the second mounting hole 324.

[0101] Optionally, a first pin hole positioning structure is provided between the first support 101 and the auxiliary arm 32;

[0102] The first pin hole positioning structure includes a first positioning pin 1011 and a first positioning hole 325;

[0103] In one embodiment, such as Figure 4-5 As shown, a first positioning pin 1011 is provided on the top of the first support 101, and a first positioning hole 325 adapted to the first positioning pin 1011 is provided on the bottom of the auxiliary arm 32.

[0104] In another embodiment, a first positioning hole 325 is provided on the top of the first support 101, and a first positioning pin 1011 (not shown) adapted to the first positioning hole 325 is provided on the bottom of the auxiliary arm 32.

[0105] Optionally, a second pin hole positioning structure is provided between the second support 201 and the auxiliary arm 32;

[0106] The second pin hole positioning structure includes a second positioning pin 2011 and a second positioning hole 326;

[0107] In one embodiment, such as Figure 4-5 As shown, a second positioning pin 2011 is provided on the top of the second support 201, and a second positioning hole 326 adapted to the first positioning pin 1011 is provided on the bottom of the auxiliary arm 32.

[0108] In another embodiment, a second positioning hole 326 is provided at the top of the second support 201, and a second positioning pin 2011 (not shown) adapted to the second positioning hole 326 is provided at the bottom of the auxiliary arm 32.

[0109] The first pin hole positioning structure can improve the assembly accuracy of the auxiliary arm 32 and the first support 101. The second pin hole positioning structure can improve the assembly accuracy of the auxiliary arm 32 and the second support 201. The cooperation of the first pin hole positioning structure and the second pin hole positioning structure can ensure that the lower electrode support 2 and the central axis of the process cavity 1 are collinear.

[0110] Optionally, the lower electrode support 2 also includes a sealing cover plate disposed at its bottom.

[0111] After the sealing cover at the bottom of the lower electrode support 2 is removed, the internal components of the lower electrode support 2 can be maintained from below, such as the wafer lifting mechanism, helium pipeline, coolant pipeline, temperature measurement component, heating component, RF introduction component, DC introduction component, etc.

[0112] Optional, such as Figure 6 and Figure 8 As shown, the process chamber 1 includes a chamber body 11 and a door assembly 12, wherein: the chamber body 11 has an opening 111, and the door assembly 12 is used to cover the opening 111;

[0113] like Figure 1 As shown, the lower electrode support 2 is connected to the door assembly 12 via the support arm 31.

[0114] Since the chamber body 11 has an opening 111, and the lower electrode support 2 is connected to the door assembly 12 through the support arm 31, the lower electrode support 2, the support arm 31, and the door assembly 12 can be moved out of or into the chamber body 11 as a whole, so that maintenance work can be carried out on the lower electrode support 2.

[0115] Furthermore, after the lower electrode support 2 is pulled out of the chamber body 11, the space above and below the lower electrode support 2 is unobstructed, which facilitates the inspection and maintenance of the interior of the lower electrode support 2.

[0116] Optional, such as Figure 9 As shown, the door assembly 12 includes a door panel 121 and a chamber fitting block 122. The chamber fitting block 122 is installed on the side of the door panel 121 facing the lower electrode support 2. The chamber fitting block 122 can be embedded into the opening 111 of the chamber body 11.

[0117] The inner surface of the cavity fitting block 122 and the inner wall surface of the cavity body 11 are concentric arc surfaces with the same diameter. When the cavity fitting block 122 is embedded in the cavity body 11, the inner surface of the cavity fitting block 122 and the inner wall surface of the cavity body 11 form a complementary continuous transition surface.

[0118] By forming a complementary and continuous transition surface between the inner surface of the chamber fitting block 122 and the inner wall surface of the chamber body 11 when the chamber fitting block 122 is embedded in the chamber body 11, the uniformity of the flow field in the process cavity 1 can be ensured, thereby improving the uniformity of plasma distribution and the stability of the etching process.

[0119] Optional, please continue reading Figure 2 The auxiliary arm 32 has three arms, and the support arm 31 has one arm.

[0120] One of the auxiliary arms 32 and the support arm 31 both extend along the first direction, and the first direction is perpendicular to the door panel 121;

[0121] The other two auxiliary arms 32 extend along the second direction, which is perpendicular to the first direction.

[0122] Optional, please continue reading Figure 9 A third induction coil 8 is provided between the chamber shaping block 122 and the door panel 121, and the chamber shaping block 122 makes conductive contact with the door panel 121 through the third induction coil 8.

[0123] Optionally, a third pin hole positioning structure is provided between the door panel 121 and the cavity matching block 122;

[0124] The third pin hole positioning structure includes a third positioning pin 1211 and a third positioning hole;

[0125] In one embodiment, such as Figure 9 As shown, a third positioning pin 1211 is provided on the side wall of the door panel 121, and a third positioning hole adapted to the third positioning pin 1211 is provided on the side wall of the cavity matching block 122.

[0126] In another embodiment, a third positioning hole is provided on the side wall of the door panel 121, and a third positioning pin 1211 (not shown) is provided on the side wall of the cavity matching block 122 to adapt to the third positioning hole.

[0127] By setting a third pin hole positioning structure between the door panel 121 and the cavity matching block 122, the minimum fitting gap between the cavity body 11 and the cavity matching block 122 can be achieved, thereby improving the conformity accuracy and integrity of the cavity surface.

[0128] Optional, such as Figure 9-10 As shown, a first channel 1221 is provided in the middle of the cavity matching block 122, and the support arm 31 passes through the first channel 1221 and is connected to the door panel 121.

[0129] Optional, such as Figure 9 As shown, an outer sealing ring is provided between the outer edge of the wall surface opposite to the door panel 121 of the cavity matching block 122 and the door panel 121, and an inner sealing ring is provided between the inner edge of the wall surface opposite to the door panel 121 (the inner edge of the cavity matching block 122 is close to the first channel 1221) and the door panel 121.

[0130] Optional, please continue reading Figure 10 A fourth induction coil 9 is provided between the support arm 31 and the door panel 121, and at least one first sealing ring 10 is provided at the joint surface between the support arm 31 and the door panel 121.

[0131] By setting a fourth induction coil 9 between the support arm 31 and the door panel 121, the door panel 121 can be electrically connected to the lower electrode support seat 2 through the support arm 31.

[0132] Optionally, a fourth pin hole positioning structure is provided between the door panel 121 and the support arm 31;

[0133] The fourth pin hole positioning structure includes a fourth positioning pin and a fourth positioning hole;

[0134] In one embodiment, a fourth positioning pin is provided on the side wall of the door panel 121, and a fourth positioning hole adapted to the fourth positioning pin is provided at the end of the support arm 31.

[0135] In another embodiment, a fourth positioning hole is provided on the side wall of the door panel 121, and a fourth positioning pin is provided at the end of the support arm 31 that is adapted to the fourth positioning hole.

[0136] Optional, such as Figure 8 and Figure 11 As shown, the door assembly 12 includes two guide rods 123, and the chamber body 11 has guide holes 112 corresponding to each guide rod 123. Each guide rod 123 is slidably fitted into the corresponding guide hole 112.

[0137] The sliding engagement design of the guide rod 123 and the guide hole 112 enables the door assembly 12 to form a drawer-type engagement structure with the chamber body 11 through the guide rod 123, ensuring the stability of the movement trajectory of the door assembly 12 during opening and closing, avoiding the door assembly 12 from deviating or shaking during movement, and improving the operating accuracy and reliability of the equipment.

[0138] Optionally, two guide rods 123 are spaced apart on the door panel 121, and the two guide rods 123 are parallel to each other.

[0139] Optional, such as Figure 12 As shown, the wafer plasma processing apparatus also includes an adjustment base 11;

[0140] The adjusting base 11 is installed at the top of the process cavity 1, and a second sealing ring 12 is provided between the bottom surface of the adjusting base 11 and the top surface of the process cavity 1.

[0141] Optional, please continue reading Figure 12 The wafer plasma processing apparatus also includes an annular liner 13 installed in the process chamber 1, and the annular liner 13 is grounded and connected to the adjustment base 11.

[0142] An annular recess 102 extending radially is provided on the inner side of the top cavity wall of the process cavity 1.

[0143] The top of the annular inner liner 13 is provided with an inner liner flange 131 extending radially, and the inner liner flange 131 is embedded in the annular recess 102.

[0144] A plasma shielding ring 14 is provided between the top surface of the inner flange 131 and the bottom surface of the adjusting base 11.

[0145] In the prior art, the bottom surface of the adjusting base 11 abuts against the top surface of the inner lining flange 131, and the top surface of the process cavity 1 abuts against the bottom surface of the inner lining flange 131, resulting in two leakage points. Therefore, it is necessary to install sealing rings between the adjusting base 11 and the inner lining flange 131, and between the process cavity 1 and the inner lining flange 131.

[0146] In this application, an annular recess 102 extending radially is provided on the inner side of the top cavity wall of the process cavity 1. The radial extension depth of the annular recess 102 is less than the radial width of the bottom surface of the adjustment base 11, so that the inner side of the bottom surface of the adjustment base 11 covers the annular recess 102, and the outer side of the bottom surface of the adjustment base 11 abuts against the process cavity 1. At this time, only a second sealing ring 12 needs to be set between the adjustment base 11 and the process cavity 1. The inner flange 131 of the annular liner 13 does not need to participate in the sealing, but only participates in the radio frequency grounding. There is no need to set a sealing ring between the inner flange 131 of the annular liner 13 and the process cavity 1, thereby simplifying the sealing structure, reducing the original two leakage points to one, reducing the leakage risk, and improving the sealing reliability of the equipment.

[0147] Optional, please continue reading Figure 12 An inner ring grounding ring 17 is provided between the annular inner liner 13 and the lower electrode support 2, and the annular inner liner 13 is grounded to the lower electrode support 2 through the inner ring grounding ring 17.

[0148] Optional, please continue reading Figure 2-3 and Figure 12 The support arm 31 and n auxiliary arms 32 are at the same height, and both the support arm 31 and n auxiliary arms 32 are located below the annular inner liner 13.

[0149] Below the annular inner liner 13 are evenly distributed support arms 31 and auxiliary arms 32, which compensate for the asymmetrical structure caused by a single support arm 31; a gap is reserved between the top of the support arm 31 and the auxiliary arm 32 and the annular inner liner 13, which can reduce the impact of the support arm 31 and the auxiliary arm 32 on the uniformity of airflow.

[0150] Optional, please continue reading Figure 12 An insulating ring 18 is installed at the top of the lower electrode support 2, and an electrostatic chuck 19 is installed on the insulating ring 18.

[0151] Optional, please continue reading Figure 12A first step mating structure is provided between the insulating ring 18 and the lower electrode support 2;

[0152] The first step mating structure includes an annular groove on the inner side of the top of the lower electrode support 2 and an annular protrusion on the bottom of the insulating ring 18; the annular groove and the annular protrusion are matched in shape.

[0153] A second-step mating structure is provided between the electrostatic chuck 19 and the insulating ring 18;

[0154] The second step mating structure includes a support step, which is arranged along the inner peripheral wall of the insulating ring 18. The support step is annular, and the bottom edge of the electrostatic chuck 19 is supported on the support step.

[0155] The center of the electrostatic chuck 19 is located on the extension line of the central axis of the lower electrode support 2.

[0156] Optionally, the annular liner 13 has a centrally symmetrical radial structure with grid-like gas channels 1321 evenly distributed along the circumference.

[0157] Optional, please continue reading Figure 6-7 and Figure 12 The annular liner 13 includes a uniform air ring 132.

[0158] The gas distribution ring 132 is located between the inner peripheral wall of the process cavity 1 and the outer peripheral wall of the insulating ring 18.

[0159] The gas distribution ring 132 has multiple radially extending gas channels 1321 evenly distributed along its circumference.

[0160] In this application, the gas equalization ring 132 has radially distributed gas channels 1321, through which gas flows into the space below the gas equalization ring 132 in the process cavity 11. The densely distributed gas channels 1321 on the annular liner 13 can impede the airflow, buffer and equalize the pressure difference at various points, and improve the uniformity of airflow in the circumference of the process cavity 11.

[0161] Optional, please continue reading Figure 12 A medium window 15 is installed on the adjusting base 11, and a third sealing ring 16 is provided at the contact point between the medium window 15 and the adjusting base 11.

[0162] The adjustment base 11 has a frustum-shaped inner cavity with a cross-sectional area that gradually increases from top to bottom. The frustum-shaped inner cavity has a buffering and amplification effect, which can guide the airflow smoothly into the process cavity 11, avoid the generation of eddies in dead corners, and enhance the smoothness of gas flow.

[0163] Optionally, the bottom of the process chamber 1 is designed as a tapered conical structure, with its inner bottom wall gradually converging towards the central axis from top to bottom to form a conical transition surface. The cone angle of this conical transition surface can be optimized according to process requirements to ensure uniform airflow distribution in the bottom region; furthermore, the arc-shaped conical surface at the bottom of the process chamber 1 cooperates with the sealing cover plate at the bottom of the lower electrode support 2 to form a homogenized air passage, optimizing the gas flow within the process chamber 1.

[0164] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, the term "connection" in this document indicates a direct connection between A and B, or an indirect connection between A and B, such as an indirect connection between A and B via C, or even via C and D, or more components. The connection between A and B can be integral or separate, detachable or fixed. The term "optional" in this document indicates that the technical feature can be combined with or not combined with any feature in the document.

[0165] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A wafer plasma processing apparatus, characterized in that, include: The process cavity has n first support platforms extending radially along its inner wall, where n≥1; The lower electrode support is located inside the process cavity. Its outer wall has n second supports that correspond one-to-one with each of the first supports. Each second support is arranged opposite to the corresponding first support. The cantilever assembly includes one support arm and n auxiliary arms that are evenly spaced around the lower electrode support. The lower electrode support is connected to the process cavity via the support arm, and each pair of oppositely arranged first and second supports cooperate to support an auxiliary arm. All of the aforementioned auxiliary arms are solid arms; The support arm includes a solid part and a channel part, the solid part being arranged around the channel part, and the channel part being a wiring channel.

2. The wafer plasma processing apparatus as described in claim 1, characterized in that, A conductive path is formed between the lower electrode support and the process cavity, and the conductive path sequentially includes: The second support platform, the second induction coil disposed between the auxiliary arm and the second support platform, the auxiliary arm, the first induction coil disposed between the auxiliary arm and the first support platform, and the first support platform.

3. The wafer plasma processing apparatus as described in claim 1, characterized in that, The auxiliary arm is fixedly connected to the first support platform by at least one first fastener; The auxiliary arm is fixedly connected to the second support platform by at least one second fastener.

4. The wafer plasma processing apparatus as described in claim 3, characterized in that, The second fastener passes through the auxiliary arm along the height direction and is threaded to the second support. The second fastener is configured to adjust the levelness of the lower electrode support by adjusting the depth to which it is screwed into the second bearing.

5. The wafer plasma processing apparatus as described in claim 1, characterized in that, The process cavity includes a chamber body and a door assembly, wherein: The chamber body has an opening. The door assembly is used to cover the opening, and the lower electrode support is connected to the door assembly via the support arm.

6. The wafer plasma processing apparatus as described in claim 5, characterized in that, The door assembly includes a door panel and a chamber fitting block. The chamber fitting block is installed on the side of the door panel facing the lower electrode support seat, and the chamber fitting block can be embedded into the opening of the chamber body. The inner surface of the cavity fitting block and the inner wall surface of the cavity body are concentric arc surfaces with the same diameter. The inner surface of the cavity fitting block and the inner wall surface of the cavity body form a complementary continuous transition surface when the cavity fitting block is embedded in the cavity body.

7. The wafer plasma processing apparatus as described in claim 6, characterized in that, A third induction coil is provided between the chamber matching block and the door panel.

8. The wafer plasma processing apparatus as described in claim 6, characterized in that, The cavity forming block has a first channel in the middle, and the support arm passes through the first channel and connects to the door panel.

9. The wafer plasma processing apparatus as described in claim 6, characterized in that, A fourth induction coil is provided between the support arm and the door panel, and at least one first sealing ring is provided at the joint surface between the support arm and the door panel.

10. The wafer plasma processing apparatus as described in claim 5, characterized in that, The door assembly includes two guide rods, and the chamber body has guide holes that correspond one-to-one with each of the guide rods. Each guide rod is slidably fitted into the corresponding guide hole.

11. The wafer plasma processing apparatus as described in claim 1, characterized in that, The wafer plasma processing device also includes an adjustment base; The adjustment base is installed at the top of the process cavity, and a second sealing ring is provided between the bottom surface of the adjustment base and the top surface of the process cavity.

12. The wafer plasma processing apparatus as described in claim 11, characterized in that, The wafer plasma processing apparatus also includes an annular liner installed in the process chamber; The top wall of the process cavity has an annular recess extending radially on the inner side. The top of the annular liner is provided with a radially extending liner flange, which is embedded in the annular recess. A plasma shielding ring is provided between the top surface of the inner flange and the bottom surface of the adjusting base.

13. The wafer plasma processing apparatus as described in claim 12, characterized in that, The wafer plasma processing apparatus also includes a dielectric window mounted on the adjustment base; A third sealing ring is provided at the contact point between the medium window and the adjustment base; The adjustment base has a frustum-shaped inner cavity, the cross-sectional area of ​​which gradually increases from top to bottom.

14. The wafer plasma processing apparatus as described in claim 12, characterized in that, An inner ring grounding ring is provided between the annular inner liner and the lower electrode support, and the annular inner liner is grounded to the lower electrode support through the inner ring grounding ring.

15. The wafer plasma processing apparatus as described in claim 12, characterized in that, The support arm and the n auxiliary arms are at the same height, and both the support arm and the n auxiliary arms are located below the annular inner liner.

16. The wafer plasma processing apparatus as claimed in claim 1, characterized in that, The wafer plasma processing apparatus also includes an insulating ring and an electrostatic chuck; The insulating ring is mounted on the top of the lower electrode support, and the electrostatic chuck is mounted on the insulating ring.

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