Metal high flatness vertical transition structure

Abstract

The application discloses a metal high-flatness vertical transition structure, relates to the technical field of lightweight antennas, and comprises a PCB structure, a top metal structure, a silicon-based process structure and a bottom metal structure which are sequentially fixed from top to bottom; the lower surface of the PCB structure is fixedly connected with the upper surface of the top metal structure; the lower surface of the top metal structure is fixedly connected with the upper surface of the silicon-based process structure; and the lower surface of the silicon-based process structure is fixedly connected with the upper surface of the bottom metal structure. The application inserts a high-flatness metal structure between the silicon-based process structure and the PCB structure, realizes effective connection among the silicon-based process structure with micron-level flatness, the metal structure with sub-millimeter-level flatness and the PCB process structure with millimeter-level flatness, and solves the problems of high cost, complex assembly process, low availability and easy damage of gold wire bonding and micro-assembly process.

Description

Technical Field

[0001] This application relates to the field of lightweight antenna technology, specifically to a metal high-flatness vertical transition structure. Background Technology

[0002] The rapid development of satellite communication and 5G technology has spurred technological innovations in compact, miniaturized, and high-performance terminal antennas. To meet the demands for compactness, miniaturization, and high performance, low-surface-weight, broadband transceiver integrated, and highly integrated lightweight antennas have become the industry's technical challenges and the main direction for future development.

[0003] Existing technologies, through the rational arrangement of silicon-based and other high-flatness, high-process-level substrates with traditional PCB substrates, and the use of micro-assembly processes such as gold wire bonding, can achieve a low-cost, high-precision structure combining active and passive components, thereby effectively improving system performance. This process has been widely used in highly integrated, lightweight antennas or RF systems, demonstrating significant cost and technological advantages.

[0004] When combining high-flatness, high-process-level silicon-based substrates with traditional PCB substrates, techniques such as gold wire bonding, micro-assembly, highly integrated silicon-based process structures, miniaturized ridge waveguide or dual-ridge waveguide network technology, and extended conductor lamination structures are employed. However, the application of these technologies leads to the following defects in the structure combining active and passive components:

[0005] 1. Gold wire bonding and micro-assembly technologies result in high costs, complex assembly processes, low availability, and susceptibility to damage.

[0006] 2. High-integration silicon-based process structures have disadvantages such as high cost, easy damage, and concentrated heat.

[0007] 3. In actual production, miniaturized ridge waveguide or double ridge waveguide network technology can be easily miniaturized if it is cut and assembled at the point of maximum current. However, it requires extremely high processing technology. Poor surface flatness of the metal cavity or insufficient uniformity of screw force can easily lead to leakage. If it is cut and assembled at the point of minimum current, the requirements for production and assembly technology are not high, but the structural size requirements are large, making it difficult to achieve miniaturization.

[0008] 4. The extended conductor lamination structure involves filling the gaps with extended conductors and then using external force to connect the upper and lower structures. However, in actual assembly, a large extended structure is not conducive to achieving electromagnetic shielding or connection, while a small extended structure is prone to aggregation and stacking during assembly, resulting in poor density uniformity. In particular, short circuits or open circuits caused by the ionization of the extended structure can have a fatal impact on the system. Summary of the Invention

[0009] Therefore, this application provides a metal high-flatness vertical transition structure to solve the problems of complex assembly process, high cost, low availability and easy damage of lightweight antennas in the prior art.

[0010] To achieve the above objectives, this application provides the following technical solution:

[0011] A high-flatness vertical transition structure for metal includes a PCB structure, a top metal structure, a silicon-based process structure, and a bottom metal structure, which are fixedly arranged from top to bottom.

[0012] The PCB structure includes a PCB antenna, a PCB, a PCB microstrip line, and a PCB ground pad. The PCB antenna is fixedly disposed on the upper surface of the PCB, and the PCB microstrip line and the PCB ground pad are fixedly disposed on the lower surface of the PCB. The PCB microstrip line and the PCB ground pad are fixedly connected to the upper surface of the top metal structure.

[0013] The top-layer metal structure includes a top-layer metal floor, a left support column, a first bottom-layer metal floor, a right support column, and a ridge waveguide-coaxial structure. The top-layer metal floor, the left support column, the first bottom-layer metal floor, and the right support column form a quadrilateral. The ridge waveguide-coaxial structure is fixedly disposed inside the quadrilateral. A first opening is provided between the top-layer metal floor and the left support column. A second opening is provided between the first bottom-layer metal floor and the ridge waveguide-coaxial structure. The ridge waveguide-coaxial structure is fixedly connected to the PCB microstrip line through the first opening. The top of the left support column and the top-layer metal floor are fixedly connected to the PCB ground pad. The ridge waveguide-coaxial structure is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening.

[0014] The upper surface of the silicon-based process structure is directly and fixedly connected to the lower surface of the first bottom metal floor; the lower surface of the silicon-based process structure is fixedly connected to the bottom metal structure.

[0015] The underlying metal structure includes an underlying metal waveguide cavity, a second underlying metal ground plane, and a ridge waveguide rotating ridge structure. The bottom of the underlying metal waveguide cavity and the ridge waveguide rotating ridge structure are respectively fixedly disposed on the upper surface of the second underlying metal ground plane. The top of the underlying metal waveguide cavity is fixedly connected to the lower surface of the silicon-based process structure, and the top of the ridge waveguide rotating ridge structure is fixedly connected to the second microstrip line on the lower surface of the silicon-based process structure.

[0016] Preferably, the lower surface of the PCB has multiple non-solder resist patterns at the positions where it is soldered to the PCB microstrip line and the PCB ground pad. The PCB microstrip line is soldered to the ridge waveguide coaxial structure through solder balls and the non-solder resist patterns. The PCB ground pad is soldered to the top of the left support column and the top metal ground plane through solder balls and the non-solder resist patterns.

[0017] Preferably, the non-solder resist pattern includes a stencil window and a PCB window, wherein the stencil window is a circular window and the PCB window is located around the circumference of the stencil window.

[0018] Preferably, the system also includes a left fixing post and a right fixing post. The bottom of the left fixing post and the right fixing post are fixedly disposed on the upper surface of the first bottom metal floor. The left fixing post is located to the left of the left support post, and the right fixing post is located to the right of the right support post. The top of the left fixing post and the top of the right fixing post are fixedly connected to both ends of the PCB by screws.

[0019] Preferably, the ridge waveguide-to-coaxial structure includes a first ridge waveguide, a ridge waveguide transition structure, and a second ridge waveguide. The first ridge waveguide and the second ridge waveguide are connected through the ridge waveguide transition structure. A coaxial inner conductor is fixedly disposed inside the first ridge waveguide, with the top of the coaxial inner conductor extending out of the first ridge waveguide. The bottom of the first ridge waveguide is fixedly connected to the first bottom metal ground plane, and the top of the coaxial inner conductor is fixedly connected to the PCB microstrip line through the first opening. A coaxial outer conductor is fixedly disposed inside the second ridge waveguide, with the bottom of the coaxial outer conductor extending out of the second ridge waveguide. The top of the second ridge waveguide is fixedly connected to the top metal ground plane, and the bottom of the coaxial outer conductor is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening.

[0020] Preferably, the silicon-based process structure includes an upper glass substrate and a lower glass substrate, with a liquid crystal layer filling the space between the upper and lower glass substrates. A phase shifter is disposed within the liquid crystal layer. A phase shifter transmission line is fixedly disposed on the lower surface of the upper glass substrate and connected to the phase shifter. A first metallized via is formed on the upper glass substrate at the position of the phase shifter transmission line. The first metallized via is fixedly connected to the bottom of the coaxial outer conductor through the first microstrip line. A second metallized via is formed on the lower glass substrate and is fixedly connected to the ridge waveguide-to-ridge structure through the second microstrip line.

[0021] Preferably, the upper glass substrate has a plurality of third metallized through holes, and the first bottom metal floor has a plurality of grooves near the upper glass substrate. The grooves correspond to the positions of the third metallized through holes, and an extended metal structure is placed in the grooves.

[0022] Preferably, a metal layer is fixedly disposed between the liquid crystal layer and the lower glass substrate.

[0023] Preferably, the ridge waveguide-to-ridge structure includes a third ridge waveguide, a ridge transition structure, and a ridge. The third ridge waveguide is fixedly connected to the ridge through the ridge transition structure. A coaxial conductor is fixedly disposed inside the third ridge waveguide. The top of the coaxial conductor extends out of the third ridge waveguide. The bottom of the third ridge waveguide is fixedly connected to the upper surface of the second bottom metal ground plane. The top of the coaxial conductor is fixedly connected to the second microstrip line on the lower surface of the silicon-based process structure. The bottom of the ridge is fixedly connected to the upper surface of the second bottom metal ground plane.

[0024] Preferably, a ridge waveguide feed network is provided inside the second bottom metal floor, and the waveguide cavity of the ridge waveguide feed network is sealed with a continuous convex structure.

[0025] Compared with the prior art, this application has at least the following beneficial effects:

[0026] 1. This application provides a high-flatness vertical transition structure for metal, comprising a PCB structure, a top-layer metal structure, a silicon-based process structure, and a bottom-layer metal structure fixedly arranged from top to bottom. By inserting a high-flatness metal structure between the silicon-based process structure and the PCB structure, this application achieves an effective connection between the micron-level flatness silicon-based process structure, the sub-millimeter-level flatness metal structure, and the millimeter-level flatness PCB process structure, solving problems such as high cost, complex assembly processes, low availability, and susceptibility to damage associated with gold wire bonding and micro-assembly processes.

[0027] 2. By creating non-solder resist patterns on the PCB that meet design requirements, the shape and size of the stencil openings can be reasonably controlled. After reflow heating, the three-dimensional shape and flow rate of the extended metal can be effectively controlled, avoiding the phenomenon of metal extension structure ionization. At the same time, the amount of extension structure added can be effectively controlled, achieving technical requirements such as effective connection and shielding.

[0028] 3. Directly connecting the high-heat areas in the silicon-based process structure to a metal structure with functions such as signal transmission and shielding can achieve the purposes of heat conduction and heat dissipation on the one hand, and the functions of the metal structure can be reused on the other hand, thus achieving high integration.

[0029] 4. Establishing a continuous "convex" structure can achieve tight bonding of waveguide assembly gaps without affecting the signal transmission inside the waveguide, avoiding the leakage phenomenon that is very easy to occur during the wide-side cutting and reassembly of the waveguide, and effectively improving the assembly yield of waveguide devices. Attached Figure Description

[0030] To more intuitively illustrate the prior art and this application, exemplary drawings are provided below. It should be understood that the specific shapes and structures shown in the drawings should not generally be regarded as limiting conditions for implementing this application; for example, based on the technical concept disclosed in this application and the exemplary drawings, those skilled in the art are able to easily make conventional adjustments or further optimizations to the addition / reduction / classification, specific shapes, positional relationships, connection methods, size ratios, etc. of certain units (components).

[0031] Figure 1 A schematic diagram of a high-flatness vertical transition structure of metal provided in this application;

[0032] Figure 2 This is a schematic diagram of a non-solder resist pattern structure for connection to a PCB microstrip line provided in this application.

[0033] Figure 3 This is a schematic diagram of a non-solder resist graphic structure connected to the PCB grounding pad provided in this application;

[0034] Figure 4 A schematic diagram of the external connection structure between the PCB structure and the top metal structure provided in this application;

[0035] Figure 5 This is a schematic diagram of the third metallized through-hole structure provided in this application;

[0036] Figure 6 A schematic diagram of the second bottom metal floor structure for the ridge waveguide feed network provided in this application;

[0037] Figure 7 This is a schematic diagram of an existing waveguide assembly structure;

[0038] Figure 8 A schematic diagram of the "convex" waveguide assembly structure provided in this application.

[0039] Explanation of reference numerals in the attached figures:

[0040] 1. PCB Structure; 101. PCB Antenna; 102. PCB; 103. PCB Microstrip Line; 1031. Microstrip Line End Metal Disk; 104. PCB Ground Pad; 105. Solder Ball; 106. Non-Solder Resistance Pattern; 1061. Stencil Window; 1062. PCB Window; 2. Top Layer Metal Structure; 201. Top Layer Metal Ground Plate; 202. Left Support Column; 203. First Bottom Layer Metal Ground Plate; 2031. Groove; 204. Right Support Column; 205. Ridge Waveguide to Coaxial Structure; 2051. First Ridge Waveguide; 20511. Coaxial Inner Conductor; 2052. Ridge Waveguide Transition Structure; 2053. Second Ridge Waveguide; 20531. Coaxial Outer Conductor; 20 6. Left fixing post; 207. Right fixing post; 208. Screw; 3. Silicon-based process structure; 301. First microstrip line; 302. First metallized via; 303. Upper glass substrate; 304. Liquid crystal layer; 305. Metal layer; 306. Lower glass substrate; 307. Phase shifter transmission line; 308. Second metallized via; 309. Second microstrip line; 310. Third metallized via; 4. Bottom metal structure; 401. Bottom metal waveguide cavity; 402. Second bottom metal ground plane; 4021. Ridge waveguide feed network; 403. Ridge waveguide to ridge structure; 4031. Third ridge waveguide; 40311. Coaxial conductor; 4032. Ridge transition structure; 4033. Ridge. Detailed Implementation

[0041] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0042] In the description of this application: unless otherwise stated, "a plurality of" means two or more. The terms "first," "second," "third," etc., in this application are intended to distinguish the objects referred to and do not have any special meaning in terms of technical connotation (e.g., they should not be construed as an emphasis on importance or order). Expressions such as "comprising," "including," and "having" also mean "not limited to" (certain units, components, materials, steps, etc.).

[0043] The terms used in this application, such as "upper," "lower," "left," "right," and "middle," are generally used to indicate the general relative positional relationship for the purpose of intuitive understanding by referring to the accompanying drawings, and are not absolute limitations on the positional relationship in the actual product.

[0044] Please see Figure 1 This application provides a high flatness vertical transition structure for metal, including a PCB structure 1, a top metal structure 2, a silicon-based process structure 3, and a bottom metal structure 4, which are fixedly arranged from top to bottom.

[0045] The PCB structure 1 includes a PCB antenna 101, a PCB 102, a PCB microstrip line 103, and a PCB ground pad 104. The PCB antenna 101 is fixedly disposed on the upper surface of the PCB 102, the PCB microstrip line 103 and the PCB ground pad 104 are fixedly disposed on the lower surface of the PCB 102, and the PCB microstrip line 103 and the PCB ground pad 104 are fixedly connected to the upper surface of the top metal structure 2.

[0046] The top metal structure 2 includes a top metal floor 201, a left support column 202, a first bottom metal floor 203, a right support column 204, and a ridge waveguide-coaxial structure 205. The top metal floor 201, the left support column 202, the first bottom metal floor 203, and the right support column 204 form a quadrilateral. The ridge waveguide-coaxial structure 205 is fixedly installed inside the quadrilateral. A first opening is provided between the top metal floor 201 and the left support column 202, and a second opening is provided between the first bottom metal floor 203. The ridge waveguide-coaxial structure 205 is fixedly connected to the PCB microstrip line 103 through the first opening. The top of the left support column 202 and the top metal floor 201 are fixedly connected to the PCB ground pad 104. The ridge waveguide-coaxial structure 205 is fixedly connected to the first microstrip line 301 on the upper surface of the silicon-based process structure 3 through the second opening.

[0047] The upper surface of the silicon-based process structure 3 is directly and fixedly connected to the lower surface of the first bottom metal floor 203; the lower surface of the silicon-based process structure 3 is fixedly connected to the bottom metal structure 4.

[0048] The bottom metal structure 4 includes a bottom metal waveguide cavity 401, a second bottom metal ground plane 402, and a ridge waveguide-to-ridge structure 403. The bottom of the bottom metal waveguide cavity 401 and the ridge waveguide-to-ridge structure 403 are respectively fixedly disposed on the upper surface of the second bottom metal ground plane 402. The top of the bottom metal waveguide cavity 401 is fixedly connected to the lower surface of the silicon-based process structure 3, and the top of the ridge waveguide-to-ridge structure 403 is fixedly connected to the second microstrip line 309 on the lower surface of the silicon-based process structure 3.

[0049] This application provides a high-flatness vertical transition structure for metal, which addresses the problems of high cost, complex assembly process, low availability, and easy damage in gold wire bonding and micro-assembly processes. Through reasonable layout, a high-flatness metal structure (top metal structure 2) is inserted between the silicon-based process structure 3 and the PCB structure 1, achieving an effective connection between the micron-level flatness silicon-based process structure 3, the sub-millimeter-level flatness metal structure, and the millimeter-level flatness PCB process structure.

[0050] For details, please refer to Figure 2In the high flatness vertical transition structure of metal provided in this application, the lower surface of PCB102 has a plurality of non-solder resist patterns 106 at the position where it is soldered to PCB microstrip line 103 and PCB ground pad 104. PCB microstrip line 103 is soldered to ridge waveguide coaxial structure 205 through solder balls 105 and non-solder resist patterns 106. PCB ground pad 104 is soldered to the top of left support column 202 and top metal floor 201 through solder balls 105 and non-solder resist patterns 106.

[0051] For more details, please see Figure 2 and Figure 3 In the high flatness vertical transition structure of metal provided in this application, the non-solder resist pattern 106 includes a stencil window 1061 and a PCB window 1062. The stencil window 1061 is a circular window, and the PCB window 1062 is opened on the outer periphery of the stencil window 1061.

[0052] This application provides a high-flatness vertical transition structure for metal, which has a non-solder resist pattern 106 cut out on a PCB to meet design requirements. By reasonably controlling the shape and size of the stencil window 1061, and after reflow heating, the three-dimensional shape (e.g., solder ball 105) and flow of the extended metal can be effectively controlled. After the extended metal structure is soldered and cured to the PCB, it is connected to the metal structure, which can effectively prevent the extended structure from becoming loose. At the same time, the three-dimensional shape and flow of the extended metal structure at different positions can be effectively controlled, and the system performance can be stabilized after assembly.

[0053] Please see Figure 4 This application provides a high-flatness vertical transition structure for metal, which further includes a left fixing post 206 and a right fixing post 207. The bottoms of the left fixing post 206 and the right fixing post 207 are fixedly disposed on the upper surface of the first bottom metal floor 203. The left fixing post 206 is located to the left of the left support post 202, and the right fixing post 207 is located to the right of the right support post 204. The tops of the left fixing post 206 and the right fixing post 207 are fixedly connected to both ends of the PCB 102 by screws 208. By placing the metal screws 208 on the periphery of the PCB 102 and the PCB antenna 101, this application can better realize the connection between the PCB microstrip line 103 and the coaxial inner conductor 20511, and ensure the connection between the coaxial outer conductor 20531 and the PCB ground pad 104.

[0054] In the high-flatness vertical transition structure of metal provided in this application, a small gap of appropriate height is left between the PCB structure 1 and the top metal structure 2 at the screw 208. When the screw 208 is tightened, the PCB 102 will be subjected to downward pressure. To ensure the tightness of the structure and connection, this application adjusts the flow rate of solder paste by controlling the size of the PCB opening 1062 and the stencil opening 1061 at the metal disk 1031 at the end of the microstrip line. Specifically, in this application, the size of the stencil opening 1061 at the metal disk 1031 at the end of the microstrip line is larger than the size of the PCB opening 1062, which allows more solder paste to flow into this area. After being heated in the reflow oven, the height and radius of the extended structure made of tin formed will be larger. Similarly, this application can also control the size of the PCB opening 1062 and the stencil opening 1061 at the PCB ground pad 104. In the application, the size of the stencil opening 1061 at the PCB ground pad 104 is smaller than the size of the PCB opening 1062. This results in less solder paste flowing into this area, leading to a relatively smaller height and radius of the resulting extended structure after heating. Through this design, the stress gradually decreases from the screw 208 towards the PCB ground pad 104, and then to the metal disk 1031 at the end of the microstrip line, while the size of the extended metal structure gradually increases. This design ensures a tight connection of the structure in different stress areas, thereby guaranteeing the stability and reliability of the entire system.

[0055] Similarly, the size and shape of the PCB window 1062 and the stencil window 1061 can be controlled according to specific circumstances, thereby achieving effective control of the three-dimensional shape and flow of the extended metal.

[0056] Continue reading Figure 1 In the high-flatness vertical transition structure of metal provided in this application, the ridge waveguide to coaxial structure 205 includes a first ridge waveguide 2051, a ridge waveguide transition structure 2052, and a second ridge waveguide 2053. The first ridge waveguide 2051 and the second ridge waveguide 2053 are connected through the ridge waveguide transition structure 2052. A coaxial inner conductor 20511 is fixedly disposed inside the first ridge waveguide 2051. The top of the coaxial inner conductor 20511 extends out of the first ridge waveguide 2051, and the bottom of the first ridge waveguide 2051 is connected to the first ridge waveguide 2053. The bottom metal ground plane 203 is fixedly connected, and the top of the coaxial inner conductor 20511 is fixedly connected to the PCB microstrip line 103 through the first opening; the second ridge waveguide 2053 has a coaxial outer conductor 20531 fixedly installed inside, the bottom of the coaxial outer conductor 20531 extends out of the second ridge waveguide 2053, the top of the second ridge waveguide 2053 is fixedly connected to the top metal ground plane 201, and the bottom of the coaxial outer conductor 20531 is fixedly connected to the first microstrip line 301 on the upper surface of the silicon-based process structure 3 through the second opening.

[0057] Continue reading Figure 1 In the high-flatness vertical transition structure of metal provided in this application, the silicon-based process structure 3 includes an upper glass substrate 303 and a lower glass substrate 306. A liquid crystal layer 304 is filled between the upper glass substrate 303 and the lower glass substrate 306. A phase shifter is disposed in the liquid crystal layer 304. A phase shifter transmission line 307 is fixedly disposed on the lower surface of the upper glass substrate 303. The phase shifter transmission line 307 is connected to the phase shifter. A first metallized through-hole 302 is opened in the upper glass substrate 303 at the position of the phase shifter transmission line 307. The first metallized through-hole 302 is fixedly connected to the bottom of the coaxial outer conductor 20531 through a first microstrip line 301. A second metallized through-hole 308 is opened on the lower glass substrate 306. The second metallized through-hole 308 is fixedly connected to the ridge waveguide-to-ridge structure 403 through a second microstrip line 309.

[0058] Please see Figure 5 In the high flatness vertical transition structure of metal provided in this application, the upper glass substrate 303 is provided with a plurality of third metallized through holes 310, and the first bottom metal floor 203 is provided with a plurality of grooves 2031 near the upper glass substrate 303. The multiple grooves 2031 correspond to the positions of the third metallized through holes 310. An extended metal structure is placed in the groove 2031, and the extended metal structure is a solder ball 105.

[0059] In the high-flatness vertical transition structure of metal provided in this application, to address the phenomenon of active heat concentration in the highly integrated silicon-based process structure 3, a reasonable design is used to directly connect the high-heat region of the silicon-based process structure 3 to a metal structure with functions such as signal transmission and shielding. This achieves both heat conduction and heat dissipation, and also enables the reuse of the metal structure's functions, thus achieving high integration. In the heat concentration region, more third metallized through-holes 310 are formed, and an extended structure is placed on top of them. After reflow, the extended metal structure becomes hemispherical. On the first bottom metal floor 203 corresponding to these hemispheres, semi-elliptical grooves 2031 are formed, allowing for good contact between the two while achieving precise positioning and connection.

[0060] Continue reading Figure 1 In the high flatness vertical transition structure of metal provided in this application, a metal layer 305 is fixedly disposed between the liquid crystal layer 304 and the lower glass substrate 306.

[0061] Continue reading Figure 1In the high flatness vertical transition structure of metal provided in this application, the ridge waveguide to ridge structure 403 includes a third ridge waveguide 4031, a ridge transition structure 4032 and a ridge 4033. The third ridge waveguide 4031 is fixedly connected to the ridge 4033 through the ridge transition structure 4032. A coaxial conductor 40311 is fixedly disposed inside the third ridge waveguide 4031. The top of the coaxial conductor 40311 extends out of the third ridge waveguide 4031. The bottom of the third ridge waveguide 4031 is fixedly connected to the upper surface of the second bottom metal ground plane 402. The top of the coaxial conductor 40311 is fixedly connected to the second microstrip line 309 on the lower surface of the silicon-based process structure 3. The bottom of the ridge 4033 is fixedly connected to the upper surface of the second bottom metal ground plane 402.

[0062] Please see Figure 6 In the high-flatness vertical transition structure of metal provided in this application, a ridge waveguide feed network 4021 is disposed inside the second bottom metal floor 402. In this high-flatness vertical transition structure of metal provided in this application, by placing the ridge waveguide feed network 4021 in the second bottom metal floor 402, a system structure integrating a feed network, a silicon-based transmission structure, a coaxial-microstrip transition structure, and antenna radiation can be realized. The miniaturized ridge waveguide design allows for a more compact and lower-loss feed network, thereby improving system performance.

[0063] Please see Figure 7 and Figure 8 To address the leakage phenomenon that is prone to occur during the wide-side cutting and reassembly of waveguides, this application optimizes simulation and design to establish a continuous "convex" structure. Without affecting the signal transmission inside the waveguide, it can achieve tight bonding of waveguide assembly gaps and effectively improve the assembly yield of waveguide devices.

[0064] Specifically, traditional ridge waveguides such as Figure 7 As shown, screws are loaded onto the outer frame of the waveguide to connect the waveguide cover plate to the bottom waveguide structure, forming a sealed waveguide cavity. However, in actual assembly, the center of the screw must be a certain physical distance from the inside of the waveguide cavity. Therefore, the stress points of the upper and lower cover plates of the waveguide cavity are not at the inner boundary of the waveguide cavity. This situation can lead to waveguide leakage, impedance discontinuity, and other phenomena, which are detrimental to signal transmission.

[0065] Please see Figure 8 This application provides a continuous "convex" structure. Without affecting the signal transmission inside the waveguide, a fixing screw is added inside the cavity, so that the force points of the upper and lower cover plates are at the inner boundary of the waveguide cavity. This makes it easier to achieve good contact between the two, reduce signal leakage, and ensure the continuity of impedance.

[0066] The high-flatness vertical transition structure of metal provided in this application has the following advantages:

[0067] (1) By inserting a high-flatness metal structure between the silicon-based process structure and the traditional PCB process, the effective connection between the micron-level flatness silicon-based process structure, the sub-millimeter-level flatness metal structure and the millimeter-level flatness PCB process structure is achieved.

[0068] (2) Directly connecting the high-heat region in the silicon-based process structure with a metal structure that has functions such as signal transmission and shielding can achieve the purpose of heat conduction and heat dissipation on the one hand, and the function reuse of the metal structure on the other hand, so as to achieve the purpose of high integration.

[0069] (3) A continuous “convex” structure was established, which achieved tight bonding of waveguide assembly gaps without affecting the signal transmission inside the waveguide, effectively improving the assembly yield of waveguide devices.

[0070] (4) After the extended metal is soldered and cured to the PCB, it is then connected to the metal structure, which can effectively prevent the extended structure from becoming loose, and at the same time achieve effective control of the three-dimensional shape and flow of the metal extended structure at different positions.

[0071] In summary, the high-flatness vertical transition structure of metal provided in this application has the following significant advantages over the patent with publication number CN114521072B:

[0072] (1) It can effectively fix the extended structure and avoid the occurrence of free movement;

[0073] (2) The shape and flow of the metal extension structure can be controlled as needed to achieve a three-dimensional layout, and the system performance is more stable after assembly.

[0074] The high-flatness vertical transition structure of metal provided in this application has the following significant advantages over the patent document with publication number CN114521072A:

[0075] (1) No weldable metallization electroplating is required;

[0076] (2) Direct assembly without high-temperature welding can effectively avoid problems such as deformation during high-temperature welding.

[0077] The high-flatness vertical transition structure of metal provided in this application has the following significant advantages over the patent with publication number CN108364878B:

[0078] (1) It has an automatic positioning function;

[0079] (2) It does not require gold wire bonding process, has high repeatability, is not easily damaged, and is easier to control impedance.

[0080] The technical features of the above embodiments can be combined in any way (as long as there is no contradiction in the combination of these technical features). For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described; these embodiments not explicitly written should also be considered to be within the scope of this specification.

Claims

1. A high-flatness vertical transition structure for metal, characterized in that, It includes, from top to bottom, a PCB structure, a top metal structure, a silicon-based process structure, and a bottom metal structure, which are fixedly arranged in sequence. The PCB structure includes a PCB antenna, a PCB, a PCB microstrip line, and a PCB ground pad. The PCB antenna is fixedly disposed on the upper surface of the PCB, and the PCB microstrip line and the PCB ground pad are fixedly disposed on the lower surface of the PCB. The PCB microstrip line and the PCB ground pad are fixedly connected to the upper surface of the top metal structure. The top-layer metal structure includes a top-layer metal floor, a left support column, a first bottom-layer metal floor, a right support column, and a ridge waveguide-coaxial structure. The top-layer metal floor, the left support column, the first bottom-layer metal floor, and the right support column form a quadrilateral. The ridge waveguide-coaxial structure is fixedly disposed inside the quadrilateral. A first opening is provided between the top-layer metal floor and the left support column. A second opening is provided between the first bottom-layer metal floor and the ridge waveguide-coaxial structure. The ridge waveguide-coaxial structure is fixedly connected to the PCB microstrip line through the first opening. The top of the left support column and the top-layer metal floor are fixedly connected to the PCB ground pad. The ridge waveguide-coaxial structure is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening. The upper surface of the silicon-based process structure is directly and fixedly connected to the lower surface of the first bottom metal floor; the lower surface of the silicon-based process structure is fixedly connected to the bottom metal structure. The underlying metal structure includes an underlying metal waveguide cavity, a second underlying metal ground plane, and a ridge waveguide rotating ridge structure. The bottom of the underlying metal waveguide cavity and the ridge waveguide rotating ridge structure are respectively fixedly disposed on the upper surface of the second underlying metal ground plane. The top of the underlying metal waveguide cavity is fixedly connected to the lower surface of the silicon-based process structure, and the top of the ridge waveguide rotating ridge structure is fixedly connected to the second microstrip line on the lower surface of the silicon-based process structure.

2. The high-flatness vertical transition structure of metal according to claim 1, characterized in that, The lower surface of the PCB has multiple non-solder resist patterns at the positions where it is soldered to the PCB microstrip line and the PCB ground pad. The PCB microstrip line is soldered to the ridge waveguide coaxial structure through solder balls and the non-solder resist patterns. The PCB ground pad is soldered to the top of the left support column and the top metal ground plate through solder balls and the non-solder resist patterns.

3. The high-flatness vertical transition structure of metal according to claim 2, characterized in that, The non-solder resist pattern includes a stencil window and a PCB window. The stencil window is a circular window, and the PCB window is located around the circumference of the stencil window.

4. The high-flatness vertical transition structure of metal according to claim 1, characterized in that, It also includes a left fixing post and a right fixing post. The bottom of the left fixing post and the right fixing post are fixedly installed on the upper surface of the first bottom metal floor. The left fixing post is located to the left of the left support post, and the right fixing post is located to the right of the right support post. The top of the left fixing post and the top of the right fixing post are fixedly connected to both ends of the PCB by screws.

5. The high-flatness vertical transition structure of metal according to claim 1, characterized in that, The ridge waveguide-to-coaxial structure includes a first ridge waveguide, a ridge waveguide transition structure, and a second ridge waveguide. The first ridge waveguide and the second ridge waveguide are connected through the ridge waveguide transition structure. A coaxial inner conductor is fixedly disposed inside the first ridge waveguide, with the top of the coaxial inner conductor extending out of the first ridge waveguide. The bottom of the first ridge waveguide is fixedly connected to the first bottom metal ground plane, and the top of the coaxial inner conductor is fixedly connected to the PCB microstrip line through the first opening. A coaxial outer conductor is fixedly disposed inside the second ridge waveguide, with the bottom of the coaxial outer conductor extending out of the second ridge waveguide. The top of the second ridge waveguide is fixedly connected to the top metal ground plane, and the bottom of the coaxial outer conductor is fixedly connected to the first microstrip line on the upper surface of the silicon-based process structure through the second opening.

6. The high-flatness vertical transition structure of metal according to claim 5, characterized in that, The silicon-based process structure includes an upper glass substrate and a lower glass substrate, with a liquid crystal layer filling the space between the upper and lower glass substrates. A phase shifter is disposed within the liquid crystal layer. A phase shifter transmission line is fixedly disposed on the lower surface of the upper glass substrate and connected to the phase shifter. A first metallized via is formed on the upper glass substrate at the position of the phase shifter transmission line. The first metallized via is fixedly connected to the bottom of the coaxial outer conductor through a first microstrip line. A second metallized via is formed on the lower glass substrate and is fixedly connected to the ridge waveguide-to-ridge structure through a second microstrip line.

7. The high-flatness vertical transition structure of metal according to claim 6, characterized in that, The upper glass substrate has multiple third metallized through holes, and the first bottom metal floor has multiple grooves near the upper glass substrate. The multiple grooves correspond to the positions of the third metallized through holes, and an extended metal structure is placed in the grooves.

8. The high-flatness vertical transition structure of metal according to claim 6, characterized in that, A metal layer is fixedly disposed between the liquid crystal layer and the lower glass substrate.

9. The high-flatness vertical transition structure of metal according to claim 6, characterized in that, The ridge waveguide-to-ridge structure includes a third ridge waveguide, a ridge transition structure, and a ridge. The third ridge waveguide is fixedly connected to the ridge through the ridge transition structure. A coaxial conductor is fixedly disposed inside the third ridge waveguide. The top of the coaxial conductor extends out of the third ridge waveguide. The bottom of the third ridge waveguide is fixedly connected to the upper surface of the second bottom metal ground plane. The top of the coaxial conductor is fixedly connected to the second microstrip line on the lower surface of the silicon-based process structure. The bottom of the ridge is fixedly connected to the upper surface of the second bottom metal ground plane.

10. The high-flatness vertical transition structure of metal according to claim 1, characterized in that, The second bottom layer metal floor is internally provided with a ridge waveguide feed network, and a waveguide cavity of the ridge waveguide feed network adopts a continuous convex structure seal 。

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