Memory and preparation method thereof

Abstract

The invention relates to a memory and a preparation method thereof. The preparation method comprises the following steps: growing a thin film stacking structure; a deep hole is etched downwards in the direction perpendicular to the film layer, and a first hole channel and a second hole channel which are communicated are formed; performing transverse etching at the hole channel position to form a transverse hole; depositing a gate dielectric layer and a semiconductor material layer; depositing an isolation material layer, and filling the holes; etching the isolation material layer and the semiconductor material layer, and reserving the isolation material layer and the semiconductor material layer in the hole; transversely etching the isolation material layer, and reserving part of the isolation material layer in the hole; depositing a conductive material, and filling the first pore channel and the hole; etching the conductive material, and reserving the conductive material in the first hole channel and the hole; depositing a gate dielectric layer; depositing a conductive material, and filling the second hole channel; grinding to be flat; and isolating the deep groove and filling an isolation material. By means of the 3D stacking technology, integration of high-density storage units is achieved, the capacity of the storage is effectively improved, and the requirement for high-density storage application is met.

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