Plasma-enhanced atomic layer deposition apparatus and method

Abstract

The application discloses a kind of plasma enhanced atomic layer deposition equipment and method, equipment includes process chamber, spray tray, gasket ring, radio frequency power supply and lifting drive mechanism, wafer is supported in process chamber, spray tray and gasket ring are arranged inside process chamber, gasket ring is located above wafer and keeps distance with wafer, spray tray is located above gasket ring, spray tray is electrically isolated with process chamber, spray tray is used to spray process gas to wafer surface, radio frequency power supply is electrically connected with spray tray, radio frequency power supply is used to apply radio frequency voltage so that process gas in process chamber is ionized to generate plasma, lifting drive mechanism is used to drive spray tray to make lifting movement to make spray tray and gasket ring seal and fit or separate, when precursor is introduced into process chamber, spray tray and gasket ring seal and fit;When spray tray sprays process gas, spray tray and gasket ring are separated, avoid positive and negative electrode conduction when radio frequency voltage is applied.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to a plasma-enhanced atomic layer deposition apparatus and method. Background Technology

[0002] Plasma-enhanced atomic layer deposition (PEALD) is an energy-enhanced atomic layer deposition technique. Its deposition principle is very similar to that of traditional atomic layer deposition (ALD), the difference being the use of highly reactive plasma to react with the precursor. Plasma is typically generated by applying a radio frequency voltage to two electrodes using a radio frequency power supply, ionizing the gas introduced between the electrodes and generating various active substances, including ions, electrons, and free radicals. Therefore, the plasma is capacitively coupled. These active substances react with the precursor adsorbed on the substrate surface to form a film.

[0003] Current plasma-enhanced atomic layer deposition methods have the following problems: When the precursor is introduced, since the precursor is in a gaseous state, it will diffuse and adsorb to various parts of the inner wall of the reaction chamber. Similarly, the plasma will also diffuse and adhere to various parts of the inner wall of the reaction chamber, reacting with the precursor to form a film. When the film is conductive, the conductive film on some wall surfaces will cause the reaction chamber to be connected to the gas spray structure, that is, the positive and negative electrodes will be connected to form a short circuit, which will prevent the generation of plasma and thus prevent the formation of the film. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention innovatively provides a plasma-enhanced atomic layer deposition (PEALD) device and method. By controlling the lifting and lowering of the spray plate through a lifting drive mechanism, the sealing and bonding states of the spray plate and the sealing gasket ring in different steps are controlled, avoiding positive and negative electrode conduction. This ensures the long-term effectiveness of the capacitively coupled plasma function, guarantees the formation of a film layer, and ensures that the film layer can reach the target thickness.

[0005] To achieve the aforementioned technical objectives, the first aspect of this invention discloses a plasma-enhanced atomic layer deposition apparatus, comprising a process chamber, a spray plate, a sealing gasket ring, a radio frequency power supply, and a lifting drive mechanism. The process chamber has a first air inlet and an air outlet. A wafer is supported inside the process chamber. The first air inlet is used to introduce a precursor into the process chamber. The spray plate and the sealing ring are disposed inside the process chamber. The sealing ring is located above the wafer, the first air inlet, and the air outlet, and maintains a distance from the wafer. The spray plate is located above the sealing ring and is electrically isolated from the process chamber. The spray plate is used to spray process gas onto the wafer surface. The radio frequency power supply is electrically connected to the spray plate, with the spray plate serving as the positive electrode and the process chamber as the negative electrode. The radio frequency power supply is used to apply a radio frequency voltage to ionize the process gas within the process chamber, generating plasma. The lifting drive mechanism is used to drive the spray plate to move up and down so that the spray plate and the sealing gasket ring are sealed together or separated. When the precursor is introduced into the process chamber, the spray plate and the sealing gasket ring are sealed together. When the spray plate sprays the process gas, the spray plate and the sealing gasket ring are separated.

[0006] Furthermore, it also includes a screen, which is fixed inside the process chamber and located between the sealing gasket ring and the wafer, and the screen maintains a distance from the wafer.

[0007] Furthermore, the process chamber includes a top plate, a bottom base, and one or more gaskets between the top plate and the bottom base. The one or more gaskets are detachably connected to the top plate and the bottom base, respectively. When there are multiple gaskets, the multiple gaskets are detachably connected to each other. The height of the process chamber is adjusted by adjusting the number of gaskets and / or the thickness of the gaskets between the top plate and the bottom base.

[0008] Furthermore, the first air inlet and the air outlet are disposed on the bottom base, and the first air inlet and the air outlet are disposed opposite to each other.

[0009] Furthermore, it also includes an insulating isolation plate disposed between the spray plate and the inner top wall of the process chamber.

[0010] Furthermore, it also includes an air intake plate, which is disposed outside the process chamber. The air intake plate has a first air intake channel, which is connected to the spray plate and is used to introduce process gas into the spray plate. The air intake plate is electrically isolated from the spray plate.

[0011] Furthermore, the air intake plate is disposed above the process chamber, the lifting drive mechanism is connected to the air intake plate, the air intake plate is connected to the spray plate, and the lifting drive mechanism drives the air intake plate and the spray plate to move up and down relative to the process chamber.

[0012] Furthermore, the first air intake channel of the air intake plate is connected to the spray plate via a vent pipe, and an opening is provided at the top of the process chamber, through which the vent pipe passes. A telescopic tube is provided between the air intake plate and the process chamber. The two ends of the telescopic tube are respectively sealed to the air intake plate and the process chamber and surround the opening, the air outlet of the first air intake channel and the vent pipe.

[0013] Furthermore, the air intake plate is also provided with a second air intake channel, the outlet of which is located inside the telescopic tube, and the second air intake channel is used to introduce inert gas.

[0014] To achieve the aforementioned technical objectives, a second aspect of the present invention discloses a plasma-enhanced atomic layer deposition method using the plasma-enhanced atomic layer deposition apparatus described in the first aspect, comprising the following steps: S1. The spray plate and the sealing gasket ring are sealed and fitted together. The first air inlet of the process chamber is used to introduce the precursor, and the air outlet of the process chamber is used to extract air. The precursor undergoes chemical adsorption on the wafer surface. At the same time, the spray plate sprays inert gas to inhibit the diffusion of the precursor into the spray plate. S2. Inert gas is introduced into the process chamber, and the spray plate sprays inert gas to purge the process chamber. S3. The lifting drive mechanism drives the spray plate to rise, causing the spray plate to separate from the sealing gasket ring; S4. The spray plate sprays the process gas, and the radio frequency power supply outputs radio frequency voltage to ionize the process gas to form plasma. The plasma reacts with the precursor to generate a film layer. S5. Inert gas is introduced into the process chamber, and the spray plate sprays inert gas to purge the process chamber. S6. Repeat steps S1 to S5 until the thickness of the film deposited on the wafer reaches the target thickness. Furthermore, step S4 also includes introducing inert gas into the telescopic tube from the second air intake channel of the air intake plate.

[0015] The beneficial effects of this invention are as follows: The plasma-enhanced atomic layer deposition apparatus and method of the present invention control the lifting and lowering of the spray plate by a lifting drive mechanism to control the sealing and bonding state of the spray plate and the sealing gasket ring in different steps, avoiding positive and negative electrode conduction, thereby ensuring the long-term effectiveness of the capacitively coupled plasma function, ensuring the generation of film and that the film can reach the target thickness. Attached Figure Description

[0016] Figure 1This is a longitudinal sectional view of the plasma-enhanced atomic layer deposition apparatus according to the first embodiment of the present invention (the spray plate and the sealing gasket are sealed and fitted together).

[0017] Figure 2 This is a longitudinal sectional view of the plasma-enhanced atomic layer deposition apparatus according to the second embodiment of the present invention (the spray plate and the sealing gasket are sealed and fitted together).

[0018] Figure 3 This is a longitudinal sectional view of the plasma-enhanced atomic layer deposition apparatus according to the third embodiment of the present invention (the spray plate and the sealing gasket are sealed and fitted together).

[0019] Figure 4 This is a longitudinal cross-sectional view of a plasma-enhanced atomic layer deposition apparatus in which the spray plate and the sealing gasket ring are separated according to an embodiment of the present invention.

[0020] Figure 5 This is a three-dimensional schematic diagram of a plasma-enhanced atomic layer deposition apparatus according to an embodiment of the present invention.

[0021] Figure 6 This is a flowchart of the plasma-enhanced atomic layer deposition method according to an embodiment of the present invention.

[0022] In the picture, 1. Process chamber; 101. First air inlet; 102. Exhaust port; 103. Opening; 11. Top plate; 12. Gasket ring; 13. Bottom base; 131. Support base; 132. Reaction base; 133. Tray; 2. Spray tray; 21. Second air inlet; 22. Spray hole; 3. Sealing gasket ring; 4. Radio frequency power supply; 5. Lifting drive mechanism; 51. Frame; 52. Electromagnet; 53. Stroke rod; 54. Spring; 6. Screen 7. Wafer; 8. Inlet plate; 81. First inlet channel; 82. Second inlet channel; 83. First inlet pipe; 84. Second inlet pipe; 9. Vent pipe; 10. Telescopic pipe; 20. Conductive rod; 30. Conductive connecting post; 301. Insulating sleeve; 40. Feed flange; 50. Insulating ring; 60. Connecting plate; 70. L-shaped bracket; 80. Insulating plate; 801. First insulating plate; 802. Second insulating plate. Detailed Implementation

[0023] The plasma-enhanced atomic layer deposition apparatus and method provided by the present invention will be explained and described in detail below with reference to the accompanying drawings.

[0024] This embodiment specifically discloses a plasma-enhanced atomic layer deposition apparatus, such as... Figure 1-4As shown, the system includes a process chamber 1, a spray plate 2, a sealing gasket ring 3, an RF power supply 4, and a lifting drive mechanism 5. The process chamber 1 has a first air inlet 101 and an exhaust port 102. The process chamber 1 has an internal cavity, and both the first air inlet 101 and the exhaust port 102 communicate with the internal cavity of the process chamber 1. In this embodiment, the interior of the process chamber 1 refers to the cavity within the process chamber 1. A wafer 7 is supported inside the process chamber 1; preferably, the wafer 7 is placed on the inner bottom wall of the process chamber 1. The first air inlet 101 is used to introduce the precursor into the process chamber 1. Preferably, the first air inlet 101 and the exhaust port 102 are arranged opposite to each other. The first air inlet 101 and the exhaust port 102 are located at the bottom of the process chamber 1 or at a position near the bottom on the side of the process chamber 1. The first air inlet 101 and the exhaust port 102 are close to the wafer 7, so that the precursor gas introduced through the first air inlet 101 can be better chemically adsorbed on the surface of the wafer 7.

[0025] In this embodiment, the cross-sectional shape of the process chamber 1 is circular, rectangular, elliptical, or rhomboid; no specific limitation is made in this application. The precursor is in a gaseous state.

[0026] like Figure 1-4 As shown, the spray plate 2 and the sealing ring 3 are disposed inside the process chamber 1. The sealing ring 3 is located above the wafer 7, the first air inlet 101, and the exhaust port 102, and is kept at a distance from the wafer 7. The spray plate 2 is located above the sealing ring 3. The distance between the sealing ring 3 and the wafer 7 is set as needed. The spray plate 2 is electrically isolated from the process chamber 1. The spray plate is used to spray process gas onto the surface of the wafer 7. Multiple spray holes 22 are opened at the bottom of the spray plate 2 to spray process gas onto the wafer 7. The inner diameter of the sealing ring 3 is also set as needed. The inner diameter of the sealing ring 3 is smaller than the outer diameter of the spray plate 2, and the gas flow rate must be ensured.

[0027] In this embodiment, the spray plate 2 has an internal cavity, a second air inlet 21 is provided at the top of the spray plate 2, and a plurality of spray holes 22 are provided at the bottom of the spray plate 2. Preferably, the spray holes 22 are evenly distributed on the spray plate 2. The second air inlet 21 and the spray holes 22 are both connected to the internal cavity of the spray plate 2. The second air inlet 21 is used to introduce process gas into the spray plate 2. After the process gas introduced from the second air inlet 21 enters the internal cavity of the spray plate 2, it is sprayed out through the spray holes 22 at the bottom of the spray plate 2. Preferably, the axis of the spray holes 22 is perpendicular to the wafer 7, so that the process gas can be sprayed directly at the wafer 7.

[0028] The spray plate 2 can be formed by detachably connecting two plate parts, upper and lower.

[0029] The RF power supply 4 is electrically connected to the spray plate 2. The spray plate 2 is the positive electrode, and the process chamber 1 is the negative electrode. The process chamber 1 can be grounded as the negative electrode. The RF power supply 4 is used to apply RF voltage to ionize the process gas in the process chamber 1 to generate plasma. The plasma can react with the precursor in the process chamber 1 to generate a film.

[0030] The lifting drive mechanism 5 is used to drive the spray plate 2 to move up and down so that the spray plate 2 and the sealing gasket 3 are sealed together or separated. When the precursor is introduced into the process chamber 1, the spray plate 2 and the sealing gasket 3 are sealed together (e.g. Figure 1-3 (as shown in the diagram) to prevent the precursor from entering the space enclosed by the sealing ring 3, the portion of the spray disc 2 above the sealing ring 3, and the portion of the process chamber 1 above the sealing ring 3, especially to prevent the precursor from adhering to the side of the spray disc 2; when the spray disc 2 sprays process gas (i.e., when process gas is introduced from the second air inlet 21 of the spray disc 2), the spray disc separates from the sealing ring 3 (e.g., ...). Figure 4 (as shown in the diagram), which separates the conductive film layer generated on the lower surface of the spray disk 2 and the inner side of the sealing ring 3 by the precursor and plasma, so as to avoid the positive and negative electrodes from conducting.

[0031] The inner diameter of the sealing ring 3 is designed according to the following principle: when the spray plate 2 and the sealing ring 3 are sealed together, the sealing ring 3 will not close the spray holes 22 on the spray plate 2, or only close the spray holes 22 on the edge, so as to avoid affecting the spraying effect of the process gas.

[0032] Because the spray plate 2 moves up and down within the cavity of the process chamber 1, there is a gap between the side of the spray plate 2 and the inner wall of the process chamber 1. Therefore, when the precursor is introduced, the precursor will adhere to the inner wall of the process chamber 1 and the side wall of the spray plate 2. When the process gas is introduced, the process gas will adhere to the inner wall of the process chamber 1, the outer wall of the spray plate 2, and the walls of other components in the process chamber 1. The plasma generated by the ionization of the process gas reacts with the previously adhered precursor to form a film. If the film is conductive, once the film reaches a certain thickness, it will cause the positive and negative electrodes formed by the spray plate 2 and the process chamber 1 to become conductive, resulting in the failure of the capacitively coupled plasma function, preventing the generation of plasma and the formation of the film. In this embodiment, a sealing ring 3 is provided below the spray plate 2. When the precursor is introduced, the spray plate 2 and the sealing ring 3 are sealed together, so that the part of the spray plate 2 above the sealing ring 3, the sealing ring 3 and the part of the spray plate 2 above the sealing ring 3 form a closed space. The precursor will not enter the closed space, especially will not adhere to the side of the spray plate 2. When the process gas is introduced, the spray plate 2 and the sealing ring 3 are separated. Even if the plasma generated by the ionization of the process gas adheres to the wall surface of the closed space, no film layer will be generated. Although the inner surface of the sealing ring 3 and the bottom surface of the spray disk 2 located directly above the inner ring of the sealing ring 3 can generate a film layer, when process gas is introduced and radio frequency voltage is applied, the spray disk 2 and the sealing ring 3 separate. The film layer generated on the bottom surface of the spray disk 2 and the film layer generated on the inner wall of the sealing ring 3 are in a separated state and will not contact each other, thus preventing conduction. This prevents the positive electrode-spray disk 2 and the negative electrode-process chamber 1 from conducting, ensuring the long-term effectiveness of the capacitively coupled plasma function. In subsequent cycle steps, plasma can be successfully ionized to continuously generate a film layer on the surface of the wafer 7.

[0033] When the precursor is introduced, the spray disc 2 moves down and seals against the sealing ring 3, which limits the size of the reaction space, avoids disordered diffusion of the precursor, helps to ensure the diffusion rate and uniformity of the precursor, and reduces the amount of source used.

[0034] In some alternative embodiments, such as Figure 1-4 As shown, the plasma-enhanced atomic layer deposition apparatus of this application further includes an insulating isolation disk 80. The insulating isolation disk 80 is disposed inside the process chamber and between the spray disk 2 and the inner top wall of the process chamber 1, for electrically isolating the spray disk 2 and the process chamber 1. The boundary of the insulating isolation disk 80 coincides with the boundary of the spray disk 2, or the area of ​​the insulating isolation disk 80 is larger than the surface area of ​​the spray disk 2, or the insulating isolation disk 80 extends beyond the spray disk 2 in the length and / or width directions, thereby achieving insulation between the spray disk 2 and the process chamber 1.

[0035] Optional, such as Figure 1As shown, the insulating isolation plate 80 is fixed on the inner top wall of the process chamber 1. When the spray plate 2 moves upward and separates from the sealing gasket 3, the spray plate 2 can rise to contact the insulating isolation plate 80, or it can rise to a certain distance from the insulating isolation plate 80, as long as the spray plate and the sealing gasket 3 can be separated.

[0036] Optional, such as Figure 2 As shown, the insulating isolation plate 80 is fixed on the top of the spray plate 2 and moves up and down with the spray plate 2. When the spray plate 2 moves upward and separates from the sealing gasket 3, the spray plate 2 can rise until the insulating isolation plate 80 contacts the inner top wall of the process chamber 1, or it can rise until there is a certain distance between the insulating isolation plate 80 and the inner top wall of the process chamber 1. As long as the spray plate can be separated from the sealing gasket 3, it is acceptable.

[0037] Optional, such as Figure 3 and 4 As shown, the insulating isolation disk 80 includes a first insulating isolation disk 801 and a second insulating isolation disk 802 arranged vertically. The first insulating isolation disk 801 is fixedly connected to the process chamber 1 and is fixed on the inner top wall of the process chamber 1. The second insulating isolation disk 802 is fixedly connected to the spray disk 2 and is fixed on the outer top surface of the spray disk 2. The second insulating isolation disk 802 can move with the spray disk 2. When the spray disk 2 moves upward and separates from the sealing gasket 3, the spray disk 2 can rise until the second insulating isolation disk 802 contacts the first insulating isolation disk 801, or it can rise until there is a certain distance between the second insulating isolation disk 802 and the first insulating isolation disk 801, as long as the separation of the spray disk 2 and the sealing gasket 3 can be achieved.

[0038] The insulating isolation plate 80 is made of a flexible material, such as Teflon, to act as a buffer. When the spray plate 2 rises to its highest point, it prevents the metal spray plate 2 from colliding with the metal process chamber 1, thus avoiding particle contamination. The insulating isolation plate 80 is also made of a high-temperature resistant material to meet the heating requirements of the plasma-enhanced atomic layer deposition process.

[0039] In some embodiments, such as Figure 1-4As shown, the plasma-enhanced atomic layer deposition (PEALD) apparatus of this application embodiment further includes a screen 6. The screen 6 is fixed inside the process chamber 1 and located between the sealing gasket ring 3 and the wafer 7. The screen 6 maintains a distance from the wafer 7, and the sealing gasket ring 3 can contact the screen 6. The area between the screen 6 and the spray plate 2 serves as the plasma generation area, and the area between the screen 6 and the wafer 7 serves as the reaction area. Preferably, the mesh openings on the screen 6 are uniformly distributed. The screen 6, on the one hand, avoids direct bombardment of the surface of the wafer 7 or the film layer on the surface of the wafer 7 by the plasma, reducing damage to the wafer 7 and the film layer on the surface of the wafer 7. On the other hand, the screen 6 can separate the flow field, to a certain extent avoiding the disordered diffusion of the precursor, and can effectively suppress the diffusion of the precursor to the plasma generation area, making it more uniformly adsorbed onto the surface of the wafer 7. The screen 6 is made of metal and serves as the negative electrode of the plasma discharge. The mesh size and number of the screen 6 are set according to the actual process requirements, as long as it can ensure that the plasma passes through smoothly and is adsorbed onto the surface of the wafer 7.

[0040] In some embodiments, such as Figure 1-5 As shown, the plasma-enhanced atomic layer deposition (PEALD) apparatus of this application also includes an inlet plate 8, which is disposed outside the process chamber 1. Preferably, the inlet plate 8 is disposed above the process chamber 1 to reduce the overall space occupied by the PALD apparatus. The inlet plate 8 has a first inlet channel 81, which is connected to the spray plate 2 for introducing process gas into the spray plate 2. The inlet plate 8 is electrically isolated from the spray plate 2 and also serves as the negative electrode. The inlet plate 8 is positioned to facilitate connection with a gas supply device to supply process gas into the spray plate 2. To facilitate connection with the gas supply device, the inlet of the first inlet channel 81 is connected to a first inlet pipe 83; to facilitate connection with the spray plate 2, the outlet of the first inlet channel 81 faces the process chamber 1. The first inlet channel 81 is used to introduce process gas, and the first inlet pipe 83 is connected to the process gas supply device.

[0041] In one embodiment, the air intake plate 8 remains stationary, while the spray plate 2 moves relative to the air intake plate 8 and the process chamber 1. The first air intake channel 81 of the air intake plate 8 is connected to the spray plate 2 via a vent pipe 9. The vent pipe 9 is connected to the second air intake port 21 of the spray plate 2. Specifically, the vent pipe 9 passes through the top wall of the process chamber 1 and connects to the spray plate 2 or to an insulating isolation plate on the spray plate 2. An opening 103 is provided at the top of the process chamber 1, and the vent pipe 9 passes through the opening 103, forming a sealed connection with the opening 103 of the process chamber 1. The vent pipe 9 is a telescopic pipe; it is stretched as the spray plate 2 descends and compressed as the spray plate 2 rises. The portion of the vent pipe 9 passing through the process chamber 1 can be a straight pipe, the portion at the top of the process chamber can be a corrugated pipe, and the portion connected to the air intake plate is also a straight pipe. The vent pipe is made of insulating material, which also achieves electrical isolation between the air intake plate 8 and the spray plate.

[0042] In another embodiment, the air intake plate 8 can move up and down together with the spray plate 2. The air intake plate 8 is located above the process chamber 1, and the lifting drive mechanism 5 is connected to the air intake plate 8. The air intake plate 8 is also connected to the spray plate 2. The lifting drive mechanism 5 drives the air intake plate 8 and the spray plate 2 to move up and down relative to the process chamber 1. The lifting drive mechanism 5 is usually located outside the process chamber 1, and the driving force of the lifting drive mechanism 5 is transmitted to the spray plate 2 through the air intake plate 8, thereby driving the spray plate 2 to move up and down.

[0043] Furthermore, the first air intake channel 81 of the air intake plate 8 is connected to the spray plate 2 through the vent pipe 9, and the vent pipe 9 is connected to the second air intake port 21 of the spray plate 2. An opening 103 is provided at the top of the process chamber 1, and the vent pipe 9 passes through the opening 103.

[0044] When the insulating isolation plate 80 is fixed on the inner top wall of the process chamber 1, the vent pipe 9 passes through the opening 103 at the top of the process chamber 1 and the insulating isolation plate 80 and is fixedly connected to the spray plate 2. At this time, the vent pipe 9 can be made of insulating material to achieve electrical isolation between the air inlet plate 8 and the spray plate 2.

[0045] When the insulating isolation plate 80 is fixed on the top of the spray plate 2, the insulating isolation plate 80 has an air inlet that communicates with the second air inlet 21 on the spray plate 2. The vent pipe 9 passes through the opening 103 at the top of the process chamber 1 and is fixedly connected to the insulating isolation plate 80 and communicates with the air inlet on the insulating isolation plate 80. At this time, the vent pipe 9 can be made of metal and can be grounded as the negative electrode. The insulating isolation plate 80 also realizes the electrical isolation between the air inlet plate 8 and the spray plate 2.

[0046] When the insulating isolation plate 80 includes a first insulating isolation plate 801 and a second insulating isolation plate 802, the second insulating isolation plate 802 is provided with an air inlet hole. The vent pipe 9 passes through the opening at the top of the process chamber 1 and the first insulating isolation plate 801 and is fixedly connected to the second insulating isolation plate 802. The vent pipe 9 communicates with the air inlet hole on the second insulating isolation plate 802 and can move up and down relative to the first insulating isolation plate 801.

[0047] The vent pipe 9 moves up and down relative to the process chamber 1 along with the air intake plate 8. In some optional embodiments, the vent pipe 9 is sealed and movably connected to the opening 103 of the process chamber 1. In other optional embodiments, such as... Figure 1-5 As shown, a telescopic tube 10 is provided between the air intake plate 8 and the process chamber 1. Both ends of the telescopic tube 10 are sealed to the air intake plate 8 and the process chamber 1, respectively, and surround the opening 103, the outlet of the first air intake channel 81, and the vent pipe 9. When the air intake plate 8, the vent pipe 9, and the spray plate 2 move downwards, the telescopic tube 10 is compressed; when the air intake plate 8, the vent pipe 9, and the spray plate 2 move upwards, the telescopic tube 10 is stretched. The telescopic tube 10 improves the sealing and isolation effect inside and outside the process chamber 1. Preferably, the telescopic tube 10 is a corrugated pipe.

[0048] Furthermore, such as Figure 1-5 As shown, the air intake plate 8 also has a second air intake channel 82. The outlet of the second air intake channel 82 is located inside the telescopic tube 10, and the second air intake channel 82 is used to introduce inert gas. To facilitate connection with the gas supply equipment, the inlet of the second air intake channel 82 is connected to a second air intake pipe 84, and the outlet of the second air intake channel 82 faces the process chamber 1. Preferably, the first air intake channel 81 and the second air intake channel 82 are arranged opposite to each other. Both the first air intake channel 81 and the second air intake channel 82 include a horizontal section and a vertical section. The end of the horizontal section near the central axis of the air intake plate 8 is connected to the top of the vertical section, and the end of the horizontal section on the side of the air intake plate 8 is connected to the air intake pipe. The bottom port of the vertical section serves as the outlet. The second air intake channel 82 is used to introduce inert gas, and the second air intake pipe 84 is connected to the inert gas supply equipment.

[0049] In some embodiments, such as Figure 1-5 As shown, the radio frequency power supply 4 is electrically connected to the spray plate 2 via a conductive rod 20. The conductive rod 20 is positioned above the air intake plate 8 for easy connection to the radio frequency power supply 4. The conductive rod 20 passes through the air intake plate 8 and is connected to the spray plate 2 via a conductive connecting post 30. Both the conductive rod 20 and the conductive connecting post 30 are electrically isolated from the air intake plate 8. Optionally, an insulating isolation sleeve 301 is provided over the conductive connecting post 30, and the portion of the conductive rod 20 inside the air intake plate 8 is fitted inside the conductive connecting post 30. Figure 1 In the embodiment shown, the bottom of the insulating sleeve 301 is fixedly connected to the spray plate 2; Figure 2In the embodiment shown, the insulating sleeve 301 is fixedly connected to the insulating insulating disk 80 fixed to the top of the spray disk 2; Figure 3 and 4 In the illustrated embodiment, the insulating sleeve 301 is fixedly connected to the second insulating disk 802 at the top of the spray disk 2, and the insulating sleeve 301 can move up and down relative to the first insulating disk 801. A connection port is provided at the center of the top of the spray disk 2, and the bottom end of the conductive connecting post 30 extends into the connection port and is fixedly connected to the spray disk 2. The top of the insulating sleeve 301 is fixedly connected to the air inlet disk 8 to achieve electrical isolation between the air inlet disk 8 and the conductive rod 20, the conductive connecting post 30, and the spray disk 2. The conductive rod 20, the conductive connecting post 30, and the spray disk 2 all serve as positive electrodes. The conductive rod 20 and the conductive connecting post 30 move up and down together with the spray disk 2. Preferably, the conductive connecting post 30 is located at the center of the spray disk 2 and also at the center of the telescopic tube 10, and the vent pipe 9 is located on the side of the conductive connecting post 30 and the insulating sleeve 301.

[0050] Optionally, the intake disc 8 has a stepped hole in the center, and the insulating sleeve 301 is stepped to match the stepped hole of the intake disc 8. After the insulating sleeve 301 is installed into the stepped hole of the intake disc 8, the top of the insulating sleeve 301 is not lower than the top of the intake disc 8. Preferably, the top of the insulating sleeve 301 is flush with the top of the intake disc 8.

[0051] Optionally, the insulating sleeve 301 may be made of non-metallic insulating materials such as quartz or ceramic.

[0052] The lifting drive mechanism 5 is located at the top of the process chamber 1. Multiple lifting drive mechanisms 5 are arranged evenly around the central axis of the process chamber 1, providing uniform and balanced driving force to drive the conductive rod 20, conductive connecting column 30, air inlet plate 8, insulating sleeve 301, and spray plate 2 to move up and down. The lifting drive mechanism 5 can be a hydraulic cylinder, pneumatic cylinder, electric cylinder, screw lifting mechanism, or push-pull electromagnet. The movable end of the lifting drive mechanism 5 is fixedly connected to the air inlet plate 8, and the fixed end is fixedly connected to the process chamber 1. The specific form of the lifting drive mechanism 5 is set according to actual needs.

[0053] To facilitate the installation of the lifting drive mechanism 5 and its connection with other structures, a power supply flange 40 is fixed to the top of the air intake plate 8. The power supply flange 40 is sleeved on the conductive rod 20, and an insulating ring 50 is provided between the power supply flange 40 and the conductive rod 20 for insulation isolation. That is, the insulating ring 50 is sleeved on the conductive rod 20, and the power supply flange 40 is sleeved on the insulating ring 50. The power supply flange 40 is fixedly connected to the top of the air intake plate 8. The power supply flange 40 serves as the negative electrode. Multiple connecting plates 60 are evenly arranged along its central axis on the top of the power supply flange 40. The number of connecting plates 60 is the same as the number of lifting drive mechanisms 5. The movable end of the lifting drive mechanism 5 is connected to the connecting plate 60 one by one. One end of the connecting plate 60 is fixed to the air intake plate 8, and the other end of the connecting plate 60 extends to the outside of the air intake plate 8 and connects to the lifting drive mechanism 5. The power supply flange 40, the insulating ring 50, and the conductive rod 20 can directly use existing standard power supply connectors, which is convenient to obtain materials and simplifies the manufacturing process.

[0054] Optionally, the insulating ring 50 may be made of Teflon.

[0055] The following explanation uses a push-pull electromagnet as an example to illustrate the connection method between the lifting drive mechanism 5 and the connecting plate 60. For example... Figure 5 As shown, the lifting drive mechanism 5 includes a frame 51, an electromagnet 52 inside the frame 51, a stroke rod 53 fixed above the electromagnet 52, and a spring 54 sleeved on the stroke rod 53. The top of the frame 51 has a through hole for the stroke rod 53 to pass through. The diameter of the through hole is smaller than the diameter of the electromagnet 52, which serves as a limit. The stroke rod 53 passes through the through hole, and the top end of the stroke rod 53 is fixedly connected to the connecting plate 60. The spring 54 is sleeved on the outside of the stroke rod 53. The top end of the spring 54 abuts against the connecting plate 60, and the bottom end of the spring 54 abuts against the top of the frame 51. The stroke rod 53 can move up and down relative to the frame 51 by the magnetic force of the electromagnet 52. The frame 51 is fixedly connected to the process chamber 1 by an L-shaped bracket 70. The frame 51 is fixed to the side of the vertical part of the L-shaped bracket 70, and the horizontal part of the L-shaped bracket 70 is fixedly connected to the top surface of the process chamber 1. When the electromagnet 52 is not energized, i.e., in the initial state, the spring 54 is in its natural state, and the spray plate 2 and the sealing gasket 3 are separated. After the electromagnet 52 is energized, the magnetic force drives the stroke rod 53 to move downward. At the same time, the connecting plate 60 moves downward with the stroke rod 53, compressing the spring 54. The downward movement of the connecting plate 60 causes the power supply flange 40, the insulating ring 50, the conductive rod 20, the air inlet plate 8, the conductive connecting column 30, the insulating isolation sleeve 301, and the spray plate 2 to move downward, so that the spray plate 2 and the sealing gasket 3 are sealed and fitted. When the electromagnet 52 is de-energized, the magnetic force disappears. Under the restoring force of the spring 54, the stroke rod 53 and the connecting plate 60 move upward, and at the same time, the power supply flange 40, the insulating ring 50, the conductive rod 20, the air inlet plate 8, the conductive connecting column 30, the insulating isolation sleeve 301, and the spray plate 2 move upward, so that the spray plate 2 and the sealing gasket 3 are separated.

[0056] The electromagnet 52 may specifically include a coil, a stationary iron core, and a moving iron core. The coil is wound on the stationary iron core frame to form a stable electromagnetic field generating unit. The moving iron core and the stationary iron core maintain a uniform magnetic gap. The moving iron core is connected to the stroke rod 53 by threaded connection, welding, or tapered pressing.

[0057] In some embodiments, such as Figure 1-5 As shown, the process chamber 1 includes a top plate 11, a bottom base 13, and one or more gaskets 12 between the top plate 11 and the bottom base 13. The one or more gaskets 12 are detachably connected to the top plate 11 and the bottom base 13 respectively. When there are multiple gaskets 12, they are detachably connected to each other. The height of the process chamber 1 can be adjusted by adjusting the number and / or thickness of the gaskets 12 between the top plate 11 and the bottom base 13. The outer edge of the bottom surface of the top plate 11 is fixedly connected to one or more gaskets 12. A sealing gasket 3 can be fixed between the gasket 12 and the bottom base 13, or, when multiple gaskets 12 are provided, fixed to the lower gasket 12. The specific fixing position of the sealing gasket 3 only needs to ensure that the sealing gasket 3 can separate from the spray plate 2 when the spray plate 2 moves upward.

[0058] Optionally, the bottom base 13 includes a support base 131, a reaction base 132, and a tray 133. The reaction base 132 is annular, and the tray 133 is sealed and fitted to the inner ring of the reaction base 132. The outer edge of the upper end face of the tray 133 is sealed and fitted to the reaction base 132. The tray 133 is used to support the wafer 7. The support base 131 is disposed above the reaction base 132. The support base 131 has an annular step inside, and one or more gaskets 12 are fixed on the annular step of the support base 131. The sealing gasket 3 can also be fixed on the annular step of the support base 131. When a screen 6 is provided, the screen 6 can be fixed on the annular step of the support base 131, and the screen 6 is located below the sealing gasket 3.

[0059] The first air inlet 101 and the air outlet 102 are disposed on the bottom base 13, and the first air inlet 101 and the air outlet 102 are disposed opposite to each other. Preferably, the first air inlet 101 and the air outlet 102 are formed on the reaction base 132.

[0060] In this embodiment, the conductive rod 20, the conductive connecting post 30, and the spray plate 2 serve as the positive electrode, while the insulating ring 50, the insulating isolation sleeve 301, and the insulating isolation plate 80 are made of insulating material and are used to isolate the positive and negative electrodes. Other structures are grounded and serve as the negative electrode.

[0061] This application also discloses a plasma-enhanced atomic layer deposition (PEALD) method using the plasma-enhanced atomic layer deposition (PEALD) equipment described in the above embodiments. First, the wafer is placed in the process chamber 1, preferably on the inner bottom wall of the process chamber 1. The process chamber is heated to reach the required temperature, and then the inner cavity of the process chamber 1 is evacuated to the required vacuum level through the evacuation port 102. Figure 6 As shown, the method includes the following steps: S1. The spray plate 2 and the sealing gasket ring 3 are sealed together. For example, when the push-pull electromagnet is energized, it drives the spray plate 2 to move downward until it is sealed together with the sealing gasket ring 3. The first air inlet 101 of the process chamber 1 introduces the precursor. At the same time, the air outlet 102 of the process chamber 1 draws air. Under the action of the suction force of the air outlet 102, the precursor undergoes chemical adsorption on the surface of the wafer 7. Simultaneously, the spray plate 2 sprays inert gas to suppress the diffusion of the precursor into the spray plate 2. Specifically, inert gas can be introduced from the first air inlet pipe 83. The inert gas enters the inner cavity of the spray plate 2 through the first air inlet channel 81, the air pipe 9 and the second air inlet 21 of the air inlet plate 8, and then is evenly sprayed downward through the spray holes 22 at the bottom of the spray plate 2, filling the plasma generation area above the screen 6. This can effectively suppress the diffusion of the precursor into the plasma generation area and into the interior of the spray plate 2, which is beneficial to the uniformity of the precursor flow field. Since the precursor is in a gaseous state, although the introduced inert gas and the screen 6 have a certain inhibitory effect, it is unavoidable that a small amount of precursor will still pass through the screen 6 and flow upward, and undergo chemical adsorption on the walls of the plasma generation area. In this application, the spray plate 2 and the sealing ring 3 are sealed together, and the sealing ring 3, the part of the spray plate 2 above the sealing ring 3 and the part of the process chamber 1 above the sealing ring 3 form a closed space, so the precursor will not enter the closed space.

[0062] S2. Inert gas is introduced into process chamber 1, and inert gas is sprayed onto spray plate 2 to purge process chamber 1. Specifically, inert gas is introduced into the first air inlet 101 of process chamber 1 and the second air inlet 21 of spray plate 2 at the same time to purge byproducts and excess precursors.

[0063] S3. The lifting drive mechanism 5 drives the spray plate 2 to rise, causing the spray plate 2 to separate from the sealing gasket ring 3. For example, when the push-pull electromagnet is de-energized, under the restoring force of the spring 54, the stroke rod 53 drives the spray plate 2 to move upward. The upward stroke of the spray plate 2 can be set as needed, for example, until it moves to cooperate with the process chamber 1 to clamp the insulating isolation plate 80, which is also the initial state of the spray plate 2.

[0064] S4. The process gas is sprayed from the spray plate 2. The process gas is introduced through the first air inlet pipe 83 and enters the cavity inside the spray plate 2 through the first air inlet channel 81 and the air pipe 9 of the air inlet plate 8. Then, the process gas is sprayed out from the spray hole 22 at the bottom of the spray plate 2. The radio frequency power supply 4 outputs radio frequency voltage, which generates a high frequency electric field between the spray plate 2 and the screen 6 through the positive electrode, ionizing the process gas to form plasma. The plasma reacts with the precursor to generate a film layer. Specifically, the plasma passes through the screen 6 and reacts with the precursor that has been adsorbed on the surface of the wafer 7 to generate a film layer. The plasma will also react with the precursor adsorbed on the upper walls of the screen 6 (such as the inner side of the sealing ring 3 and the bottom surface of the spray plate 2) to generate a film layer. In some embodiments, step S4 further includes introducing inert gas into the telescopic tube 10 from the second air intake channel 82 of the air intake plate 8 and blowing it downwards to prevent the plasma from spreading disorderly into the telescopic tube 10. Specifically, inert gas is introduced from the second air intake pipe 84, and the inert gas enters the telescopic tube 10 through the second air intake channel 82, filling the telescopic tube 10.

[0065] S5. Inert gas is introduced into process chamber 1, and inert gas is sprayed by spray plate 2 to purge process chamber 1. Specifically, inert gas is introduced into the first air inlet 101 of process chamber 1 and the second air inlet 21 of spray plate 2 at the same time to purge byproducts and excess precursors, thus forming a film layer at one time, i.e. a circulating film layer.

[0066] S6. Repeat steps S1 to S5 until the thickness of the film deposited on wafer 7 reaches the target thickness. In step S1 of this embodiment, the spray disk 2 and the sealing ring 3 are sealed together, preventing the precursor from entering the sealed space formed by the sealing ring 3, the portion of the process chamber 1 above the sealing ring 3, and the portion of the spray disk 2 above the sealing ring 3. As the precursor diffuses, it will be adsorbed onto other inner wall surfaces. In step S3, the spray disk 2 separates from the sealing ring 3. In step S4, plasma is generated between the spray disk 2 and the screen 6, and a conductive film is generated on the wall surface where the precursor is adsorbed. However, before each plasma generation, there is a step where the spray disk 2 moves upward and separates from the sealing ring 3. This causes the conductive film formed on the bottom surface of the spray disk 2 and the inner surface of the sealing ring 3 to separate and not contact each other, thus preventing the positive and negative electrodes from conducting. The alternating electric field can then be formed normally to ionize the process gas and form plasma.

[0067] Compared to the existing technology that uses inert gas to purge the side of the insulating isolation disk to prevent the formation of a conductive film and thus avoid the conduction between the positive and negative electrodes, the embodiments of this application have the following advantages: 1. By using mechanical movement, the spray plate 3 and the sealing ring 3 are brought into contact, sealed, and separated, preventing the formation of a conductive film on the top surface of the sealing ring 3, the inner wall of the process chamber 1 above the sealing ring 3, and the side surface of the spray plate 2. This also prevents the conductive film on the bottom surface of the spray plate 2 and the inner surface of the sealing ring 2 from contacting, making it more effective. Existing technologies, through gas purging, cannot completely prevent the precursor from diffusing into the positive and negative electrode connection region and forming a conductive film with the plasma. This only prolongs the conduction time and cannot fundamentally prevent it, while this application can fundamentally prevent it.

[0068] 2. No additional large amount of inert gas is introduced for purging, which will not affect the diffusion of the precursor, and is conducive to the uniformity of precursor adsorption, thus ensuring the quality of the film.

[0069] 3. The structure is relatively simple. It only requires simple up and down movement to ensure the contact or separation of the spray plate 2 and the sealing gasket ring 3. There is no need to consider designing a special structure to purge inert gas to avoid the formation of a conductive film. At the same time, there is no need to consider the precise control of inert gas purging and gas flow rate.

[0070] In summary, the plasma-enhanced atomic layer deposition equipment of this application has a simple structure and is easy to operate. It can effectively avoid the conduction of positive and negative electrodes, ensure the effective generation of plasma and the quality of the reaction-generated film, and provide a novel deposition method. Moreover, the deposition method is simple and does not require precise control of the inert gas used for purging and the gas flow rate.

[0071] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0072] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0073] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0074] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0075] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and simple improvements made on the substantive content of the present invention should be included within the protection scope of the present invention.

Claims

1. A plasma-enhanced atomic layer deposition apparatus, characterized in that, It includes a process chamber (1), a spray plate (2), a sealing gasket ring (3), an RF power supply (4), and a lifting drive mechanism (5). The process chamber (1) is provided with a first air inlet (101) and an air outlet (102). A wafer (7) is supported inside the process chamber (1). The first air inlet (101) is used to introduce a precursor into the process chamber (1). The spray plate (2) and the sealing ring (3) are disposed inside the process chamber (1). The sealing ring (3) is located above the wafer (7), the first air inlet (101), and the air extraction port (102) and maintains a distance from the wafer (7). The spray plate (2) is located above the sealing ring (3). The spray plate (2) is electrically isolated from the process chamber (1). The spray plate (2) is used to spray process gas onto the surface of the wafer (7). The radio frequency power supply (4) is electrically connected to the spray plate (2), with the spray plate (2) serving as the positive electrode and the process chamber (1) serving as the negative electrode. The radio frequency power supply (4) is used to apply a radio frequency voltage to ionize the process gas in the process chamber (1) to generate plasma. The lifting drive mechanism (5) is used to drive the spray plate (2) to move up and down so that the spray plate (2) and the sealing gasket (3) are sealed together or separated. When the precursor is introduced into the process chamber (1), the spray plate (2) and the sealing gasket (3) are sealed together. When the spray plate (2) sprays the process gas, the spray plate (2) and the sealing gasket (3) are separated. The inner diameter of the sealing ring (3) satisfies the following: when the spray plate (2) and the sealing ring (3) are sealed together, the sealing ring (3) will not close the spray holes (22) on the spray plate (2), or only close the spray holes (22) on the edge, so as to avoid affecting the spraying effect of the process gas.

2. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, It also includes a screen (6), which is fixed inside the process chamber (1) and located between the sealing gasket ring (3) and the wafer (7), and the screen (6) and the wafer (7) are kept at a distance.

3. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, The process chamber (1) includes a top plate (11), a bottom base (13), and one or more gaskets (12) between the top plate (11) and the bottom base (13). The one or more gaskets (12) are detachably connected to the top plate (11) and the bottom base (13), respectively. When there are multiple gaskets (12), the multiple gaskets (12) are detachably connected to each other. The height of the process chamber (1) can be adjusted by adjusting the number of gaskets (12) between the top plate (11) and the bottom base (13) and / or the thickness of the gaskets (12).

4. The plasma-enhanced atomic layer deposition apparatus according to claim 3, characterized in that, The first air inlet (101) and the air outlet (102) are disposed on the bottom base (13), and the first air inlet (101) and the air outlet (102) are disposed opposite to each other.

5. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, It also includes an insulating isolation plate (80), which is disposed between the spray plate (2) and the inner top wall of the process chamber (1).

6. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, It also includes an air intake plate (8), which is located outside the process chamber (1). The air intake plate (8) has a first air intake channel (81) which is connected to the spray plate (2) and is used to introduce process gas into the spray plate (2). The air intake plate (8) is electrically isolated from the spray plate (2).

7. The plasma-enhanced atomic layer deposition apparatus according to claim 6, characterized in that, The air intake plate (8) is located above the process chamber (1). The lifting drive mechanism (5) is connected to the air intake plate (8). The air intake plate (8) is connected to the spray plate (2). The lifting drive mechanism (5) drives the air intake plate (8) and the spray plate (2) to move up and down relative to the process chamber (1).

8. The plasma-enhanced atomic layer deposition apparatus according to claim 7, characterized in that, The first air intake channel (81) of the air intake plate (8) is connected to the spray plate (2) through the vent pipe (9). The top of the process chamber (1) has an opening (103), and the vent pipe (9) passes through the opening (103). A telescopic tube (10) is provided between the air intake plate (8) and the process chamber (1). The two ends of the telescopic tube (10) are respectively sealed to the air intake plate (8) and the process chamber (1) and surround the opening (103), the air outlet of the first air intake channel (81) and the ventilation pipe (9).

9. The plasma-enhanced atomic layer deposition apparatus according to claim 8, characterized in that, The air intake plate (8) is also provided with a second air intake channel (82), the outlet of the second air intake channel (82) is located inside the telescopic tube (10), and the second air intake channel (82) is used to introduce inert gas.

10. A plasma-enhanced atomic layer deposition method using the plasma-enhanced atomic layer deposition apparatus according to any one of claims 1-9, characterized in that, Includes the following steps: S1. The spray plate (2) and the sealing gasket (3) are sealed and fitted together. The first air inlet (101) of the process chamber (1) is used to introduce the precursor. The air extraction port (102) of the process chamber (1) is used to extract the air. The precursor is chemically adsorbed on the surface of the wafer (7). At the same time, the spray plate (2) sprays inert gas to suppress the diffusion of the precursor into the spray plate (2). S2. Inert gas is introduced into the process chamber (1), and the spray plate (2) sprays inert gas to purge the process chamber (1); S3, The lifting drive mechanism (5) drives the spray plate (2) to rise, so that the spray plate (2) separates from the sealing gasket ring (3); S4. The spray plate (2) sprays process gas, and the radio frequency power supply (4) outputs radio frequency voltage to ionize the process gas to form plasma. The plasma reacts with the precursor to generate a film layer. S5. Inert gas is introduced into the process chamber (1), and the spray plate (2) sprays inert gas to purge the process chamber (1). S6. Repeat steps S1 to S5 until the thickness of the film deposited on the wafer (7) reaches the target thickness.

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