Resistance trimming control methods, control mechanisms, laser trimming machines, and storage media

Abstract

This application relates to the field of resistance adjustment technology, and discloses a resistance trimming control method, control mechanism, laser trimming machine, and storage medium. The method includes: acquiring the initial resistance value and target resistance value of the target resistive element; determining a trimming strategy based on the initial and target resistance values, the trimming strategy including a roughing stage and a fine processing stage, wherein the resistance range in the roughing stage is smaller than the resistance range in the fine processing stage, and the initial trimming parameters in the roughing stage are partially or entirely higher than those in the fine processing stage; trimming the target resistive element according to the trimming strategy and acquiring the real-time resistance value of the target resistive element; adjusting the initial trimming parameters of the current processing stage based on the real-time resistance value, and outputting a corresponding processing control signal. This application achieves precise control of the resistance change during the trimming process of the target resistive element by gradually adjusting the trimming parameters in stages and dynamically adjusting the trimming parameters of the current processing stage based on the real-time resistance value, thereby improving the trimming accuracy.

Description

Technical Field

[0001] This application relates to the field of resistance adjustment technology, and in particular to a resistance adjustment control method, control mechanism, laser resistance adjustment machine, and storage medium. Background Technology

[0002] In modern electronic devices, high-precision resistors are crucial components. The accuracy of a resistor's value directly affects the performance and stability of the circuit. For example, if the resistance value of a resistor deviates too much, the entire circuit may malfunction. To achieve the production of high-precision resistors, a common method is to use pulsed lasers to trim the resistor's resistance (i.e., fine-tune its value). This pulsed laser trimming is a process that uses laser technology to ablate the material to adjust the resistance value. Simply put, a pulsed laser beam is used to gradually remove excess material from the surface of the resistor material, thereby adjusting the resistance value to the target value.

[0003] However, existing laser trimming technology typically uses a set compensation value for laser trimming, which is difficult to control at the end of the trimming process and cannot dynamically adjust the trimming process at the end. This seriously leads to a large error in the final trimming accuracy of the resistor, thereby reducing the yield of resistor products. Summary of the Invention

[0004] In view of this, in order to improve the accuracy of resistors after trimming and increase the yield of resistor products, this application provides a resistor trimming control method, a control mechanism, a laser trimming machine, and a storage medium.

[0005] In a first aspect, this application provides a resistor trimming control method, comprising: Obtain the initial resistance and target resistance of the target resistive element; A resistance correction strategy is determined based on the initial resistance value and the target resistance value. The resistance correction strategy includes a roughing stage and a fine machining stage. The resistance range of the roughing stage is smaller than the resistance range of the fine machining stage. Some or all of the initial resistance correction parameters in the roughing stage are higher than the initial resistance correction parameters in the fine machining stage. The target resistor is subjected to resistance correction according to the aforementioned resistance correction strategy, and the real-time resistance value of the target resistor is obtained. The initial resistance adjustment parameters for the current processing stage are adjusted based on the real-time resistance value, and the corresponding processing control signal is output.

[0006] In an optional implementation, the step of adjusting the initial resistance parameter of the current processing stage based on the real-time resistance value includes: The resistance change, laser output power, galvanometer moving speed, galvanometer moving step distance, and the difference between the target resistive body and the target resistance value are obtained during each laser resistance repair process at different processing stages of the target resistive body. Based on the real-time resistance value, the processing stage of the target resistive body during laser resistance repair is determined, and one or more of the laser output power, the galvanometer moving speed, and the galvanometer moving step distance within the current processing stage are adjusted.

[0007] In an optional implementation, the roughing stage includes a rapid processing zone and a transition processing zone, the range of which is greater than the range of which is the rapid processing zone; the step of adjusting the initial resistance parameter of the current processing stage based on the real-time resistance value includes: When the real-time resistance value is detected to be within the rapid processing range, the target resistive element is rapidly repaired using the initial repair parameters within the rough processing stage. When the real-time resistance value is detected to be within the transition processing range, the initial laser output power and the initial galvanometer moving speed in the roughing stage are adjusted to obtain the transition laser output power and the transition galvanometer moving speed in the transition processing range. The transition laser output power is less than the initial laser output power in the roughing stage, and the transition galvanometer moving speed is less than the initial galvanometer moving speed in the roughing stage.

[0008] In an optional implementation, the step of adjusting the initial resistance parameter of the current processing stage based on the real-time resistance value includes: When the real-time resistance value is detected to be within the fine processing stage, it is determined whether the product of the resistance change of the most recent laser marking and the preset number of laser markings in the fine processing stage is greater than or equal to the difference between the target resistive element and the target resistance value. If so, then it is determined that the process has entered the final processing zone, and the laser output power and galvanometer movement step distance in the final processing zone are adjusted. If not, then it is determined to enter the holding processing range, and the initial resistance parameters of the holding processing range or the resistance parameters of the most recent laser dotting are used for resistance correction.

[0009] In an optional implementation, the step of adjusting the laser output power and galvanometer movement step distance within the final processing interval includes: Reduce laser output power; The galvanometer movement step distance is dynamically adjusted according to the number of laser dotting reservations to ensure that there are two adjacent galvanometer movement step distances with the same distance during the laser dotting process. The number of laser dotting reservations decreases successively after laser dotting is performed in the final processing interval.

[0010] In an optional implementation, the step of dynamically adjusting the galvanometer movement step distance according to the predetermined number of laser dotting attempts to ensure that there are two adjacent galvanometer movement step distances with the same distance during the laser dotting process includes: Based on the difference between the target resistive element and the target resistance value, and the predetermined number of laser marking attempts, the theoretical resistance change value of the laser marking is determined as follows: Where Rcr is the theoretical resistance change value of laser marking, Roff is the difference between the target resistive body and the target resistance value, and LTRnum is the number of laser marking attempts reserved. Based on the galvanometer movement step distance and resistance change of the most recent laser marking, the galvanometer movement step distance for this laser marking is determined as follows: Where S0 is the galvanometer movement step during the most recent laser dotting, and R0 is the resistance change during the most recent laser dotting. Recalculate the difference between the target resistive element and the target resistance value, and repeat the above steps.

[0011] In an optional implementation, the laser output power in each processing zone is a constant value.

[0012] Secondly, this application provides a control mechanism for resistor repair, comprising: The memory is used to store the laser parameters, galvanometer parameters, initial resistance value, target resistance value, and real-time resistance value of the target resistive body during the resistance repair process. The processor is used to receive the initial resistance value, target resistance value, and real-time resistance value of the target resistor, determine the resistance repair strategy, and adjust the initial resistance repair parameters of the current processing stage according to the real-time resistance value. The controller is used to receive the resistance adjustment parameters after being adjusted by the processor and output the corresponding processing control signal.

[0013] Thirdly, this application provides a laser trimming machine, comprising: A measuring mechanism is used to obtain the initial resistance value of the target resistive element, the real-time resistance value of the target resistive element during resistance repair, and the amount of resistance change of the target resistive element during resistance repair. The control mechanism is used to acquire the stored target resistance value, determine the resistance repair strategy based on the initial resistance value and the target resistance value, adjust the initial resistance repair parameters of the current processing stage based on the real-time resistance value, and output the corresponding processing control signal. A laser processing mechanism is used to correct the resistance of a target resistive body according to processing control signals.

[0014] Fourthly, this application provides a computer storage medium storing a computer program, which, when executed, implements the aforementioned resistance correction control method.

[0015] This application provides a resistor repair control method. By dividing the entire repair process into multiple repair stages, the repair parameters are gradually adjusted in stages. Combined with the real-time resistance value of the target resistor being monitored in real time, the repair parameters of the current processing stage are dynamically adjusted to ensure that the real-time resistance value gradually approaches the target resistance value. This achieves precise control over the resistance change during the repair process of the target resistor, thereby significantly improving the accuracy and yield of the resistor after repair. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and therefore should not be considered as a limitation on the scope of protection of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This paper shows a schematic diagram of a resistor adjustment mechanism according to an embodiment of the present application. Figure 2 A schematic flowchart of a resistor trimming control method in an embodiment of this application is shown; Figure 3 This illustration shows a schematic diagram of the laser spot during the resistor repair process in an embodiment of this application. Figure 4 This illustration shows a schematic diagram of the relationship between the resistance change and the number of galvanometer movement steps within the final processing interval in an embodiment of this application. Figure 5 A schematic diagram of a control mechanism for resistor repair is shown in an embodiment of this application. Detailed Implementation

[0018] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0019] The components of the embodiments of this application described and illustrated in the accompanying drawings can be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of this application provided in the drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0020] In the following, the terms “comprising,” “having,” and their cognates, which may be used in various embodiments of this application, are intended only to indicate a particular feature, number, step, operation, element, component, or combination thereof, and should not be construed as excluding, firstly, the presence of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, or adding the possibility of one or more features, numbers, steps, operations, elements, components, or combinations thereof.

[0021] Furthermore, the terms "first," "second," and "third" are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0022] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this application pertain. Terms (such as those defined in commonly used dictionaries) shall be interpreted as having the same meaning as in their contextual meaning in the relevant technical field and shall not be construed as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this application.

[0023] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0024] This application provides a laser trimming machine. Through the cooperation of various components in the laser trimming machine, and by monitoring the resistance value of the target resistor in real time during the multiple trimming stages, the operating status of each component is dynamically adjusted stage by stage, and the laser trimming parameters are dynamically adjusted according to the real-time resistance changes. This allows for reliable control of the resistance value change of the target resistor, ensuring the reliability and stability of the trimming process, thereby significantly improving the accuracy and yield of the target resistor after trimming.

[0025] Exemplary, such as Figure 1 As shown, the laser trimming machine includes a measuring mechanism 110, a control mechanism 120, and a laser processing mechanism 130.

[0026] The measuring mechanism 110 is used to acquire the initial resistance value of the target resistive body, the real-time resistance value of the target resistive body during resistance repair, and the resistance change of the target resistive body during resistance repair; the control mechanism 120 acquires the stored target resistance value, determines the resistance repair strategy based on the initial resistance value and the target resistance value, adjusts the initial resistance repair parameters of the current processing stage based on the real-time resistance value, and outputs the corresponding processing control signal; the laser processing mechanism 130 is used to repair the resistance of the target resistive body according to the processing control signal.

[0027] It is understood that the control mechanism 120 first determines the resistance repair strategy based on the initial resistance value obtained by the measuring mechanism 110 and the stored target resistance value. The resistance repair strategy includes multiple different resistance repair parameters, including laser parameters and galvanometer parameters. The laser processing mechanism 130 is driven by the processing control signal to repair the target resistive body according to the different resistance repair parameters.

[0028] Then, during the resistance repair process, the control mechanism 120 adjusts the current resistance repair parameters based on the real-time resistance value and resistance change obtained by the measuring mechanism 110, and drives the laser processing mechanism 130 to repair the target resistive body according to the adjusted resistance repair parameters by adjusting the corresponding processing control signal.

[0029] In one embodiment, the laser processing mechanism 130 further includes a galvanometer assembly and a laser emission assembly. The laser emission assembly provides a high-energy-density laser beam, which, through the galvanometer assembly, illuminates different positions of the target resistive body on the repair platform, causing vaporization of the resistive body surface and achieving the repair effect. The laser emission assembly includes several lasers, including but not limited to infrared lasers, green lasers, and ultraviolet lasers. The type and number of lasers can be set according to requirements, such as pulsed lasers; this embodiment does not limit the specific type.

[0030] The galvanometer assembly is used to rapidly rotate or swing the galvanometer (i.e., adjust the galvanometer's moving speed or step distance) driven by a high-speed motor, thereby changing the orientation of the emitted laser beam (i.e., the direction and position of the laser emission), and achieving precise irradiation of a specific area on the resistive surface by the laser beam. In other words, the galvanometer assembly is used to achieve precise positioning of the laser beam, so that the laser emission assembly emits a laser beam towards the target resistive body according to the positioning result of the galvanometer assembly, so as to accurately act on a specific position of the target resistive body, thereby achieving resistance adjustment. The galvanometer assembly contains multiple sets of galvanometers, and the type of galvanometer includes, but is not limited to, two-dimensional galvanometers.

[0031] In one embodiment, the laser processing mechanism 130 further includes a motion module, a cooling component, a safety protection component, and a dust extraction component; wherein, the cooling component is used to pump coolant to each component in the laser processing mechanism 130 to ensure stable operation of each component; the motion module is used to dynamically adjust the position of the target resistive element fixedly placed on the resistance repair platform during the resistance repair process; the safety protection component is used to provide safety protection measures to ensure operational safety; and the dust extraction component is used to collect dust and waste generated during the resistance repair process to ensure environmental cleanliness.

[0032] Obviously, during the repair process, the control mechanism 120 can synchronously control the movement state of each component in the laser processing mechanism 130 to ensure the safety and reliability of the repair.

[0033] It is worth noting that before performing resistance repair, the control mechanism 120 can pre-set the resistance repair path. Then, during the actual resistance repair process, the control mechanism 120 drives the galvanometer of the galvanometer assembly in the laser processing mechanism 130 to move to the corresponding position according to the resistance repair path, so that the laser emitted by the laser emitting assembly acts on the corresponding position on the target resistive body via the galvanometer. In other words, the galvanometer assembly controls the movement of the galvanometer to make the laser emitted by the laser emitting assembly scan and cut the target resistive body along the resistance repair path, and regulates the resistance repair process according to the resistance repair strategy until the resistance repair is completed.

[0034] This method employs a pulsed laser. For each pulse emitted, the galvanometer moves one step according to the pre-defined repair path, ensuring that one pulse completes one repair cycle. During the repair process, the emitted laser beam forms a pattern on the target resistive body, such as... Figure 2 The laser spot is shown. Different galvanometer movement steps result in different laser spot overlap rates, thus affecting the laser's effect on the resistive material.

[0035] In this embodiment, the control mechanism 120 drives the galvanometer assembly and the laser emission assembly to perform resistance repair on the target resistive body in stages. Based on the real-time resistance value measured by the measuring mechanism 110, the control mechanism 120 dynamically adjusts the resistance repair parameters of the galvanometer assembly and the laser emission assembly, and then performs resistance repair on the target resistive body according to the corresponding resistance repair parameters. This accurately controls the amount of resistance change of the target resistive body. By monitoring the real-time resistance change, the entire resistance repair process is dynamically regulated to avoid excessively delayed feedback during resistance repair, improve the reliability of resistance repair, and thus greatly improve the yield of resistor products.

[0036] Furthermore, this embodiment can employ a high-precision measuring mechanism 110 to monitor and provide feedback on the real-time resistance value during the repair process, enabling the control mechanism 120 to dynamically adjust the repair parameters based on the real-time resistance value. This can significantly reduce measurement errors during the repair process and improve the repair accuracy.

[0037] For reference, such as Figure 3 As shown, based on the structure of the laser trimming machine described above, the laser trimming machine performs a resistance trimming control method when trimming the resistance. This method specifically includes the following steps: S310, obtain the initial resistance value and target resistance value of the target resistor.

[0038] S320 determines the resistance repair strategy based on the initial resistance value and the target resistance value.

[0039] S330 performs resistance correction on the target resistor according to the resistance correction strategy and obtains the real-time resistance value of the target resistor.

[0040] S340 adjusts the initial resistance parameters of the current processing stage based on the real-time resistance value and outputs the corresponding processing control signal.

[0041] For reference, the control mechanism 120 determines the resistance repair strategy based on the difference between the initial resistance value and the target resistance value. This resistance repair strategy includes multiple processing stages to adjust the resistance repair parameters in stages and output corresponding processing control signals for more precise resistance repair control, thereby improving resistance repair accuracy.

[0042] For example, the resistance repair strategy includes a roughing stage and a fine processing stage; wherein the resistance range of the roughing stage is smaller than that of the fine processing stage, and the initial resistance repair parameters in the roughing stage are partially or entirely higher than those in the fine processing stage.

[0043] In other words, this embodiment divides the complete resistance repair process into a roughing stage and a fine processing stage based on the difference between the initial resistance value and the target resistance value. Each stage corresponds to a resistance value range, and the current processing stage is determined based on the real-time resistance value of the target resistive element. Furthermore, each stage is set with initial resistance repair parameters. The roughing stage is suitable for larger resistance value adjustments, while the fine processing stage is suitable for fine adjustments. That is, the adjustment range of the resistance repair parameters in the roughing stage is greater than that in the fine processing stage.

[0044] As a feasible implementation method, under the condition that the real-time resistance value of the target resistor is within a preset resistance range, the system controls the transition from the current processing stage to the next processing stage. The upper and lower limits of the resistance range for each stage can be set according to actual needs, and this embodiment does not limit this. It can be understood that this embodiment can determine whether to end the current resistance repair stage and proceed to the next processing stage by monitoring the real-time resistance value after each resistance repair, thus achieving dynamic switching between multiple processing stages and multi-stage control of the resistance repair process to ensure stability and reliability.

[0045] Furthermore, the resistance correction parameters include, but are not limited to, laser output power, galvanometer moving speed, and galvanometer moving step distance. These resistance correction parameters can be set and adjusted according to actual needs, and this embodiment does not limit them.

[0046] Exemplary, the control mechanism 120 acquires the resistance change, laser output power, galvanometer moving speed, galvanometer moving step distance, and the difference between the target resistive body and the target resistance value during each laser resistance repair process in different processing stages through the measuring mechanism 110; then, based on the real-time resistance value, it determines the processing stage of the target resistive body during laser resistance repair, and adjusts one or more of the laser output power, galvanometer moving speed, and galvanometer moving step distance in the current processing stage.

[0047] In the process of resistance repair according to the resistance repair strategy, the control mechanism 120 first drives the laser processing mechanism 130 to perform a roughing stage of resistance repair on the target resistive body according to the initial resistance repair parameters. This roughing stage includes a rapid processing zone and a transition processing zone. Then, at the start of resistance repair, the control mechanism 120 first drives the laser processing mechanism 130 into the rapid processing zone, and then gradually transitions to the transition processing zone. In one example, the range of the transition processing zone is larger than the range of the rapid processing zone.

[0048] In one embodiment, when the control mechanism 120 detects that the real-time resistance value is currently in the rapid processing range, it drives the laser processing mechanism 130 to rapidly repair the target resistive body using the initial repair parameters within the roughing stage. When the real-time resistance value is in the transition processing range, the current repair parameters are adjusted to gradually reduce the resistance change rate (or reduce the resistance change amount), so that the repair process can smoothly transition from the roughing stage to the fine processing stage.

[0049] It is important to note that the rate or magnitude of resistance change during the resistance trimming process is related to various trimming parameters, such as galvanometer movement speed, laser output power, laser emission frequency, spot density, and spot size. Spot density is particularly related to the galvanometer movement step distance; a smaller step distance results in higher spot overlap and a larger spot density. Generally, in practical scenarios, initial trimming parameters are set before trimming, ensuring a relatively high laser emission frequency, laser output power, and spot density. This allows the laser to cleanly cut the resistive material along the path, achieving a better trimming effect. When adjusting the trimming parameters, different parameters can be adjusted according to actual needs, allowing the combined effect of various parameters to meet the corresponding trimming requirements. This embodiment uses laser output power and galvanometer movement speed as examples to illustrate the adjustment of trimming parameters.

[0050] In some examples, when the control mechanism 120 detects that the real-time resistance value is within the transition processing range, it adjusts the initial laser output power and the initial galvanometer movement speed during the roughing stage to obtain the transition laser output power and transition galvanometer movement speed within the transition processing range. This, in turn, drives the laser processing mechanism 130 to repair the target resistive body according to the transition laser output power and transition galvanometer movement speed, thereby slowing down the laser repair process. Specifically, the transition laser output power is lower than the initial laser output power during the roughing stage, and the transition galvanometer movement speed is lower than the initial galvanometer movement speed during the roughing stage.

[0051] In this embodiment, the control mechanism 120 continuously monitors the real-time resistance value of the target resistive element in each processing interval through the measuring mechanism 110 during the resistance correction process, and dynamically adjusts the resistance correction parameters of the current processing stage based on the real-time resistance value. Specifically, in the roughing stage, the resistance correction parameters (such as the galvanometer moving speed and laser output power) are reduced after processing in the high-speed processing interval for a period of time to enter the transition processing interval. When the transition processing interval is nearing its end (i.e., the roughing stage is nearing its end), the resistance correction parameters are reduced again to smoothly transition to the fine processing stage. Then, in the fine processing stage, the resistance correction parameters are further refined and adjusted to ensure that the target resistance value is finally achieved.

[0052] It is worth noting that the transitional processing range in the roughing stage serves as a bridge between the roughing and fineing stages, preventing abrupt resistance changes that could occur when transitioning directly from roughing to fineing. This prevents the rapid resistance change during roughing from weakening or even failing the resistance control function in the fineing stage, ensuring stable real-time resistance changes during the repair process and gradually approaching the target resistance value. Therefore, if a significant resistance repair is involved (i.e., a large difference between the initial and target resistance values), it is preferable to divide the entire repair process into three or more processing stages or ranges. This improves repair efficiency while ensuring accuracy and stability.

[0053] In one example, the fine machining stage includes a holding machining interval and a final machining interval. When transitioning from the rough machining stage to the fine machining stage, the control mechanism 120 first reduces the resistance parameter and drives the laser processing mechanism 130 to perform resistance repair according to the initial resistance parameter corresponding to the fine machining stage (the initial resistance parameter of the fine machining stage is less than the resistance parameter of the transition machining interval). This ensures a smooth transition from the rough machining stage to the holding machining interval in the fine machining stage. Then, near the end of the holding machining interval, the resistance parameter is reduced to enter the final machining interval until the resistance repair is completed. The range of the final machining interval is greater than the range of the holding machining interval.

[0054] In short, the rate of change of the resistance of the target resistive element in the roughing stage is greater than that in the fineing stage; the rate of change or the amount of change of resistance decreases sequentially in the rapid processing range, the transition processing range, and the fine processing stage.

[0055] It is worth noting that, in order to further refine the control of the resistance adjustment parameters and accuracy during the fine processing stage, this embodiment can adjust the resistance adjustment parameters multiple times based on the resistance change of the target resistive body during the fine processing stage; that is, the resistance adjustment strategy also includes dynamically adjusting the resistance adjustment parameters during the fine processing stage so that the real-time resistance value of the target resistive body gradually approaches the target resistance value at a small rate of change.

[0056] Exemplarily, this fine-machining stage can be divided into a holding processing interval and a final processing interval. The holding and final processing intervals are dynamically switched via a logical judgment. Once the final processing interval is determined, the target resistive material is kept within it. If the target resistive material enters the holding processing interval, there is no need to adjust the resistance-repairing parameters for the next laser-pointing operation; if the target resistive material enters the final processing interval, then the resistance-repairing parameters for the next laser-pointing operation need to be adjusted. Laser-pointing is a single process where a pulsed laser emits a spot and irradiates the surface of the resistive material for laser resistance repair.

[0057] The fine-machining stage has a pre-set number of laser atomizations, such as 10, 20, or 30. If the target resistive element is detected to be in the fine-machining stage, the required range to enter and whether the resistance correction parameters for the next laser atomization need to be adjusted are determined based on the resistance change from the most recent laser atomization and the pre-set number of laser atomizations for the fine-machining stage. The resistance correction parameter to be adjusted is the galvanometer movement step distance.

[0058] Furthermore, it is determined whether the product of the most recent laser marking resistance change and the number of laser marking reservations is greater than or equal to the difference between the target resistive body and the target resistance value; if so, it is determined that the target resistive body has now entered the final processing interval, and the laser output power and galvanometer movement step distance in the final processing interval are adjusted.

[0059] Conversely, if not, the target resistive body is determined to have entered the holding processing range, and the resistance adjustment parameters are not adjusted, so as to maintain the initial resistance adjustment parameters of the processing range or maintain the resistance adjustment parameters at the time of the most recent laser dotting.

[0060] It should be noted that if the target resistor is determined to have entered the holding processing range, after each laser dotting and resistance repair, based on the above logic, it is necessary to determine again whether the target resistor remains in the holding processing range or switches to the final processing range; however, if the target resistor is determined to have entered the final processing range, it is not necessary to execute the above logic again, so that the target resistor remains in the final processing range.

[0061] Furthermore, during this logical judgment process, the value of the laser dot reservation number remains unchanged. Only after the target resistive element enters the final processing zone does the laser dot reservation number decrease with each laser dot. It can be understood that this laser dot reservation number is the number of laser dot operations required for the target resistive element within the final processing zone.

[0062] As a further example, the process of adjusting the laser output power and galvanometer movement step distance in the final processing zone can be as follows: reduce the laser output power; dynamically adjust the galvanometer movement step distance according to the number of laser dotting reservations, wherein the number of laser dotting reservations decreases successively after laser dotting in the final processing zone.

[0063] In some examples, the process of controlling the laser output power and galvanometer movement step distance in the final processing section can also be as follows: reduce the laser output power; dynamically adjust the galvanometer movement step distance according to the number of laser dotting attempts, so as to ensure that there are two adjacent galvanometer movement step distances that are the same during the laser dotting process, and ensure that the resistance change during each resistance repair is precise and controllable.

[0064] In some examples, this can be a further improvement on any of the above embodiments. In the step of dynamically adjusting the galvanometer movement step distance based on the number of laser marking intervals, the specific implementation process is as follows: based on the difference between the target resistive element and the target resistance value, and the number of laser marking intervals, the theoretical resistance change value of the laser marking is determined as follows: Where Rcr is the theoretical resistance change value of laser marking, Roff is the difference between the target resistive body and the target resistance value, and LTRnum is the number of laser marking attempts reserved; based on the galvanometer movement step distance and resistance change of the most recent laser marking, the galvanometer movement step distance for this laser marking is determined as: Where S0 is the galvanometer movement step during the most recent laser marking, and R0 is the resistance change during the most recent laser marking; then recalculate the difference Roff between the target resistive body and the target resistance, and repeat the above steps.

[0065] The laser dot reservation count is the number of laser dots remaining after subtracting the number of laser dots that have been completed from the preset total laser dot reservation count. This total laser dot reservation count is the preset total number of laser dots to be performed in the final processing interval. For example, if the total laser dot reservation count set in the final processing interval is 10, and one laser dot has been completed, then the laser dot reservation count LTRnum is (10-1=9) times.

[0066] For example, let R0 be the resistance change after each laser point within the current processing range, Roff be the difference between the real-time resistance of the target resistor and the target resistance, and LTRnum be the number of laser point reservations. Assume the real-time resistance of the target resistor is 97, and it has entered the fine processing stage. The target resistance is 100. After the most recent laser point, the resistance change of the target resistor is R0 = R1 = 0.1, and LTRnum be the number of laser point reservations is 10. Then the difference is Roff = 3, and the logical judgment condition is R0 * LTRnum = 0.1 * 10 = 1 < Roff = 3. That is, in the fine processing stage, the product of the resistance change R0 after the most recent laser point and LTRnum be the number of laser point reservations is less than Roff, the difference between the target resistor and the target resistance. Then it is determined that the target resistor has entered the holding processing range. There is no need to adjust the galvanometer movement step for the next resistance repair. The resistance repair continues with the resistance repair parameters from the previous laser point or the initial resistance repair parameters preset in the holding processing range are used for the repair. This embodiment does not limit the resistance parameter within the holding processing range. Optionally, the initial resistance parameter set within the holding processing range may be partially or entirely smaller than the resistance parameter within the transition processing range.

[0067] If the resistance is adjusted using the resistance adjustment parameters from the previous laser dotting when entering the holding processing zone, since the target resistive body was in the transition processing zone during the previous laser dotting, the transition processing zone is effectively extended when the resistance adjustment parameters from the last transition processing zone are used in the holding processing zone. The holding processing zone can be regarded together with the transition processing zone as the transition zone from the rapid processing zone to the final processing zone.

[0068] If R0*LTRnum≥Roff, then the process enters the final processing range, where more precise resistance repair is achieved by controlling the step distance.

[0069] In the final processing section, the value of LTRnum is decremented by 1 after each resistance correction. The theoretical resistance change Rcr = Roff / LTRnum for each correction is used to calculate the galvanometer movement step for the next correction, thus controlling the resistance change for each correction until the real-time resistance after correction reaches the target resistance. In other words, when adjusting the galvanometer movement step for the next correction in the final correction stage, this step is related to the real-time resistance, target resistance, and theoretical resistance change of the target resistive element. Reducing the galvanometer movement step slows down the galvanometer's movement speed, effectively reducing the correction speed and ensuring the accuracy and stability of the correction process.

[0070] For example, assuming a target resistance of 100 ohms, the resistance range during the fine machining stage is 97-100 ohms. Within the transition machining range, after the last laser marking, the real-time resistance is 97.05 ohms, the difference is 2.95 ohms, and the resistance change is R1 = 0.1 ohms. Therefore, up to the present, the resistance change from the most recent laser marking is R0 = R1 = 0.1 ohms. Setting the laser marking reserve number LTRnum to 10, R0 * LTRnum = 0.1 * 10 = 1 < Roff = 2.95. Therefore, it can be determined that the target resistive element is in the holding machining range. At this point, if the initial resistance correction parameters for the holding machining range are used for holding resistance correction, and since these initial correction parameters are less than the correction parameters in the transition machining range, then after the next laser marking, the resistance change R2 will be less than R1.

[0071] If the resistance change R2 = 0.05 after the next laser dot, then the resistance change R0 = R2 = 0.05 after the most recent laser dot.

[0072] Assuming that the initial resistance adjustment parameters within the maintenance processing range are maintained, and since the resistance adjustment parameters remain unchanged, it can be assumed that the resistance change at each laser point remains constant. Then, when the real-time resistance of the target resistive element reaches 99.5, the difference between the real-time resistance and the target resistance is 0.5. At this point, the resistance change R0 = 0.05; R0 * LTRnum = 0.05 * 10 = 0.5 = Roff. Therefore, it can be determined that the target resistive element has switched from the maintenance processing range to the final processing range.

[0073] Since the laser dotting reserve is 10 times, meaning only 10 laser dotting operations are reserved in the final processing interval, and only 10 laser pulses are emitted within the final processing interval, the theoretical change in resistance during laser dotting is Rcr = Roff / LTRnum = 0.5 / 10 = 0.05.

[0074] Furthermore, after entering the final processing area, the step distance of the first laser dot is equal to (the most recent step distance / the most recent resistance change) * the theoretical value. According to this formula, the most recent resistance change is 0.05, and the theoretical value is also 0.05. Therefore, the step distance of the first laser dot is the same as the most recent laser dot.

[0075] However, upon entering the final processing zone, the laser power decreases. Even if the initial galvanometer movement step distance remains unchanged, the resistance change R0 after the first laser point in the final processing zone will decrease. Continuing with the above example, the resistance change R0 is no longer equal to R2 = 0.05, but smaller than 0.05; let's assume this resistance change R0 is 0.03. At this point, the real-time resistance changes to 99.5 + 0.03 = 99.53, the difference Roff is 0.47, and the theoretical resistance change Rcr for the laser point is Roff / LTRnum = 0.47 / 9 ≈ 0.0522222. Therefore, calculating the step distance for the second laser point = (most recent step distance / most recent resistance change) * theoretical value, we can see that the most recent resistance change is 0.03, and the theoretical resistance change Rcr for the laser point is 0.0522222. The step distance for the second laser point is larger than that for the first laser point.

[0076] However, the step size of the second marking is larger, and there is more laser-eliminated resistive material, which leads to a larger change in resistance R0 in the second marking. This further causes the real-time resistance to suddenly increase in the next marking, and the difference between the laser and the target Roff to suddenly decrease. Therefore, the theoretical change in resistance Rcr of the laser marking will suddenly decrease.

[0077] The step size for the third laser marking is calculated as (most recent step size / most recent resistance change) * theoretical value. Based on this formula, it can be deduced that a larger most recent resistance change R0 leads to a smaller theoretical resistance change Rcr for subsequent laser markings, resulting in a smaller overall result, i.e., a smaller step size in the third step. This causes the effect of the third laser marking to be the opposite of that of the second laser marking.

[0078] Furthermore, the small step size of the third laser marking causes the third resistance change R0 to decrease, resulting in a sudden decrease in the real-time resistance and a sudden increase in the difference Roff. Therefore, the theoretical resistance change Rcr of the laser marking increases.

[0079] This process continues, with the step size decreasing in the third laser marking, leading to a larger step size calculation in the fourth laser marking, forming a cycle until the step size stabilizes.

[0080] Among them, the relationship between the resistance change and the galvanometer movement step distance in the final processing interval is as follows: Figure 4 As shown. It can be understood that if the number of laser dotting attempts set within the final processing interval is sufficient, the step size value during each laser dotting will become increasingly stable. Consequently, the more stable the step size value, the better the resistance change can be controlled, thus ensuring the stability of the resistance repair.

[0081] It's worth noting that, within the maintenance processing range, regardless of whether the initial resistance adjustment parameters or those used in the transition processing range are applied, the changes in resistance adjustment within the final processing range are similar after switching to it. Furthermore, when the number of laser marking points in the final processing range is sufficiently large, at least two adjacent galvanometer movement steps will be identical during subsequent resistance adjustment, indicating that the various resistance adjustment parameters have stabilized and no longer change. Moreover, due to the introduction of the laser marking point reservation, when the resistance adjustment parameters remain stable, the remaining laser marking point reservations have evenly distributed the difference between the target resistive element and the target resistance value. Therefore, after performing laser marking according to all remaining laser marking point reservations, the real-time resistance value will equal the target resistance value, achieving precise laser resistance adjustment.

[0082] Furthermore, this embodiment gradually subdivides the galvanometer movement step distance during each resistance repair within the final processing interval, so that the real-time resistance value after resistance repair can gradually approach the set target resistance value, thus ensuring the stability and reliability of resistance repair.

[0083] In this embodiment, by dynamically adjusting the galvanometer movement step size while appropriately reducing the laser output power, it can be ensured that minor changes can be effectively detected and adjusted. The specific value of the reduction in laser output power can be set according to actual needs, and this embodiment is not limited in this regard.

[0084] In some examples, it can be a further improvement on any of the above embodiments. During the fine processing stage, when adjusting the laser output power and the galvanometer movement step, only the galvanometer movement step can be adjusted without adjusting the laser output power.

[0085] As an optional implementation, this can be a further improvement on any of the above embodiments, where the laser output power in each processing zone is a constant value. In other words, the laser output power is not adjusted in each processing zone; instead, other resistance parameters are adjusted.

[0086] As an optional implementation, it can be a further improvement on any of the above embodiments, where the resistance adjustment parameters that need to be adjusted in each processing zone can be only the galvanometer moving speed or the galvanometer moving step.

[0087] As a feasible implementation method, in multiple processing stages, the initial value of the resistance parameter in the current processing stage is less than the value of the resistance parameter at the end of the previous processing stage or processing interval. That is, the value of the resistance parameter at the end of each processing stage or processing interval is not used as the initial value of the next processing stage or processing interval, and the resistance parameter decreases sequentially in the roughing and fine processing stages.

[0088] In one embodiment, this can be a further improvement on any of the above embodiments, where the laser output power in each processing stage is a constant value, and the laser output power value decreases sequentially in each processing stage. In other words, in this embodiment, the laser output power of each processing stage can be preset, and then the laser processing mechanism 130 emits laser with a fixed laser output power in each processing stage. The specific value of the laser output power corresponding to each resistance-correcting stage can be set according to actual needs, and this embodiment does not limit this.

[0089] In one embodiment, it can be a further improvement based on any of the above embodiments, where the galvanometer movement step distance in the roughing stage is a constant value. In other words, in the roughing stage, the galvanometer moves to the corresponding position along the resistance repair path with a fixed movement step distance; in the fine processing stage, the control mechanism 120 dynamically adjusts the galvanometer movement step distance for the next resistance repair based on the received real-time resistance value.

[0090] As a feasible implementation method, this can be a further improvement on any of the above embodiments. In this embodiment, after confirming that the resistance repair is completed, a laser trimming machine can be used to further perform comprehensive testing and calibration on the target resistive body after resistance repair to verify whether the resistor meets the preset specifications. The rules for comprehensive testing and calibration, as well as the preset specifications, can be set according to actual needs, and this embodiment is not limited in this regard.

[0091] In this embodiment, by dividing the process into multiple processing stages and gradually adjusting the resistance repair parameters in stages, and by dynamically adjusting one or more resistance repair parameters in the current processing stage in conjunction with the real-time resistance value of the target resistor being monitored in real time, it is possible to achieve precise control over the resistance change during the resistance repair process of the target resistor, which significantly improves the accuracy and yield of the resistor after resistance repair.

[0092] Please refer to Figure 5 This application embodiment also provides a control mechanism 120 for resistor repair, which, exemplary, includes a processor 121, a controller 122, and a memory 123.

[0093] The memory 123 is used to store the laser parameters, galvanometer parameters, initial resistance value, target resistance value, and real-time resistance value of the target resistive body during the resistance repair process.

[0094] The processor 121 is used to receive the initial resistance value, target resistance value and real-time resistance value of the target resistor, determine the resistance repair strategy, and adjust the initial resistance repair parameters of the current processing stage according to the real-time resistance value; the controller 122 is used to receive the resistance repair parameters adjusted by the processor 121 and output the corresponding processing control signal.

[0095] The processor 121 can be an integrated circuit chip with signal processing capabilities. The processor 121 can be a general-purpose processor, including at least one of a Central Processing Unit (CPU), Graphics Processing Unit (GPU), Network Processor (NP), Digital Signal Processor (DSP), Application-Specific Integrated Circuit (ASIC), Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. The general-purpose processor can be a microprocessor or any conventional processor, capable of implementing or executing the methods, steps, and logic block diagrams disclosed in the embodiments of this application.

[0096] For reference, the control mechanism 120 also includes a memory 123 storing a computer program, which the processor 121 executes to cause the resistance repair control system to perform the resistance repair method described above.

[0097] Furthermore, the memory 123 may be, but is not limited to, random access memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), etc. The memory 123 is used to store computer programs, and the processor 121 can execute the computer programs accordingly after receiving execution instructions.

[0098] It can be understood that the control mechanism 120 in this embodiment corresponds to the control mechanism 120 of the laser trimming machine in the above embodiment. The options in the above embodiment are also applicable to this embodiment, so they will not be described again here.

[0099] This application also provides a computer storage medium for storing the computer program used in the control mechanism 120 described above. The computer storage medium can be a readable storage medium, a non-volatile storage medium, or a volatile storage medium. For example, the computer storage medium may include, but is not limited to, various media capable of storing program code, such as a USB flash drive, a portable hard drive, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0100] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings show the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that, in alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagram and / or flowchart, and combinations of blocks in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0101] In addition, the functional modules or units in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0102] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a smartphone, personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application.

[0103] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

Claims

1. A method for controlling resistance trimming, characterized in that, include: Obtain the initial resistance and target resistance of the target resistive element; A resistance correction strategy is determined based on the initial resistance value and the target resistance value. The resistance correction strategy includes a roughing stage and a fine machining stage. The resistance range of the roughing stage is smaller than the resistance range of the fine machining stage. Some or all of the initial resistance correction parameters in the roughing stage are higher than the initial resistance correction parameters in the fine machining stage. The target resistor is subjected to resistance correction according to the aforementioned resistance correction strategy, and the real-time resistance value of the target resistor is obtained. The initial resistance adjustment parameters for the current processing stage are adjusted based on the real-time resistance value, and the corresponding processing control signal is output. The step of adjusting the initial resistance parameters of the current processing stage based on the real-time resistance value includes: When the real-time resistance value is detected to be within the fine processing stage, it is determined whether the product of the resistance change of the most recent laser marking and the preset number of laser markings in the fine processing stage is greater than or equal to the difference between the target resistive element and the target resistance value. If so, then it is determined that the process has entered the final processing zone, and the laser output power and galvanometer movement step distance in the final processing zone are adjusted. If not, then it is determined to enter the holding processing zone, and the initial resistance parameters of the holding processing zone or the resistance parameters of the most recent laser dotting are used for resistance repair. The step of adjusting the laser output power and galvanometer movement step distance within the final processing zone includes: Reduce laser output power; The galvanometer movement step distance is dynamically adjusted according to the number of laser dotting reservations to ensure that there are two adjacent galvanometer movement step distances with the same distance during the laser dotting process. The number of laser dotting reservations decreases successively after laser dotting is performed in the final processing interval.

2. The resistance trimming control method according to claim 1, characterized in that, The step of adjusting the initial resistance parameters of the current processing stage based on the real-time resistance value includes: The resistance change, laser output power, galvanometer moving speed, galvanometer moving step distance, and the difference between the target resistive body and the target resistance value are obtained during each laser resistance repair process at different processing stages of the target resistive body. Based on the real-time resistance value, the processing stage of the target resistive body during laser resistance repair is determined, and one or more of the laser output power, the galvanometer moving speed, and the galvanometer moving step distance within the current processing stage are adjusted.

3. The resistance trimming control method according to claim 2, characterized in that, The roughing stage includes a rapid processing zone and a transition processing zone, with the range of the transition processing zone being larger than that of the rapid processing zone. The step of adjusting the initial resistance parameters of the current processing stage based on the real-time resistance value includes: When the real-time resistance value is detected to be within the rapid processing range, the target resistive element is rapidly repaired using the initial repair parameters within the rough processing stage. When the real-time resistance value is detected to be within the transition processing range, the initial laser output power and the initial galvanometer moving speed in the roughing stage are adjusted to obtain the transition laser output power and the transition galvanometer moving speed in the transition processing range. The transition laser output power is less than the initial laser output power in the roughing stage, and the transition galvanometer moving speed is less than the initial galvanometer moving speed in the roughing stage.

4. The resistance trimming control method according to claim 1, characterized in that, The step of dynamically adjusting the galvanometer movement step distance according to the predetermined number of laser dotting attempts to ensure that there are two adjacent galvanometer movement step distances with the same distance during the laser dotting process includes: Based on the difference between the target resistive element and the target resistance value, and the predetermined number of laser marking attempts, the theoretical resistance change value of the laser marking is determined as follows: Where Rcr is the theoretical resistance change value of laser marking, Roff is the difference between the target resistive body and the target resistance value, and LTRnum is the number of laser marking attempts reserved. Based on the galvanometer movement step distance and resistance change of the most recent laser marking, the galvanometer movement step distance for this laser marking is determined as follows: Where S0 is the galvanometer movement step during the most recent laser dotting, and R0 is the resistance change during the most recent laser dotting. Recalculate the difference between the target resistive element and the target resistance value, and repeat the above steps.

5. The resistance trimming control method according to claim 1 or 3, characterized in that, The laser output power in each processing zone is a constant value.

6. A control mechanism for resistor adjustment, characterized in that, The control mechanism is used to implement the resistor repair control method according to any one of claims 1-5, including: The memory is used to store the laser parameters, galvanometer parameters, initial resistance value, target resistance value, and real-time resistance value of the target resistive body during the resistance repair process. The processor is used to receive the initial resistance value, target resistance value, and real-time resistance value of the target resistor, determine the resistance repair strategy, and adjust the initial resistance repair parameters of the current processing stage according to the real-time resistance value. The controller is used to receive the resistance adjustment parameters after being adjusted by the processor and output the corresponding processing control signal.

7. A laser trimming machine, characterized in that, The laser trimming machine is used to implement the resistance trimming control method according to any one of claims 1-5, including: A measuring mechanism is used to obtain the initial resistance value of the target resistive element, the real-time resistance value of the target resistive element during resistance repair, and the amount of resistance change of the target resistive element during resistance repair. The control mechanism is used to acquire the stored target resistance value, determine the resistance repair strategy based on the initial resistance value and the target resistance value, adjust the initial resistance repair parameters of the current processing stage based on the real-time resistance value, and output the corresponding processing control signal. A laser processing mechanism is used to correct the resistance of a target resistive body according to processing control signals.

8. A computer storage medium, characterized in that, It stores a computer program, which, when executed, implements the resistance correction control method according to any one of claims 1-5.

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