Transistor structure and manufacturing method thereof

Abstract

The invention provides a transistor structure and a manufacturing method thereof, and the transistor structure comprises a substrate, a heterojunction film layer, and an electrode layer. The electrode layer comprises a grid electrode part, a source electrode part and a drain electrode part; the transistor structure further comprises a first dielectric layer and a second dielectric layer, the first dielectric layer is coupled with the second dielectric layer, and the first dielectric layer and the second dielectric layer are both located on the side, opposite to the substrate, of the heterojunction film layer. The orthographic projection of the second dielectric layer is located between the orthographic projections of the adjacent gate part and drain part, and / or the orthographic projection of the second dielectric layer is located between the orthographic projections of the adjacent gate part and source part; at least part of the orthographic projection of the first dielectric layer is located between the adjacent grid part and the orthographic projection of the second dielectric layer; the lattice constants of the first dielectric layer and the second dielectric layer are different. According to the invention, two physical properties of turn-off current and sheet resistance are decoupled, and a user can independently regulate and control the turn-off current and sheet resistance of the transistor structure.

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