High-precision temperature measurement calibration method and system

Through bipolar transistor structure and Δ∑-ADC technology, combined with digital correction algorithm, the reference voltage temperature drift and process deviation are eliminated, and high-precision temperature measurement of the fuse chip temperature sensor in a wide temperature range is achieved, reaching a measurement accuracy of ±0.1℃ and 24-bit resolution.

CN120609464APending Publication Date: 2025-09-09BEIJING VIAGRA TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510699452.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-28
Publication Date
2025-09-09

AI Technical Summary

Technical Problem

The measurement accuracy of traditional temperature sensors is difficult to exceed ±0.5°C over a wide temperature range. The temperature drift and process deviation of the external reference source lead to systematic errors. The Vbe voltage and temperature have an approximately logarithmic relationship, resulting in residual errors. The ADC circuit is susceptible to switching noise interference in low-power mode. Existing improvement solutions have failed to effectively solve the coupling problem between the Vbe/ΔVbe ratio signal and process deviation.

Method used

A temperature measurement system based on the Vbe/ΔVbe ratio architecture is constructed by generating a temperature-related voltage signal through a bipolar transistor structure, adopting Δ∑-ADC and dynamic component matching correction technology, combined with a digital correction algorithm to eliminate process deviations and noise interference, and using a polynomial fitting algorithm to calculate the temperature value.

Benefits of technology

The system achieves a measurement accuracy of ±0.1°C within the range of -40°C to 125°C. The DEM digital dynamic correction effectively suppresses component mismatch errors, and the ADC integral nonlinearity is reduced to ±0.0015%. Combined with a third-order single-loop feedforward structure and a 128x oversampling rate, it significantly improves the anti-interference capability under extreme temperatures.

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Abstract

The invention relates to the technical field of fuze chip temperature measurement, and discloses a high-precision temperature measurement calibration method and system. The calibration method is applied to a fuze chip temperature sensor and specifically comprises the following steps that S101, a Vbe voltage signal in direct proportion to the absolute temperature and a delta Vbe voltage signal irrelevant to the temperature are generated through a bipolar transistor structure, and the bipolar transistor structure is a topological structure and comprises at least two sets of NPN or PNP type bipolar transistors; s102, the bipolar transistor works in a sub-threshold region, the collector current Ic is controlled to be 10 nA to 100 nA, and the base-emitter voltage Vbe is in an approximate linear relation along with the temperature change. According to the invention, the precision, the stability and the environmental adaptability of temperature measurement are obviously improved, a voltage signal related to the temperature is directly generated through current density ratio adjustment and a sub-threshold region working mode, dependence on an external high-precision reference source is not needed, and the influence of reference voltage temperature drift and process deviation on a system is eliminated from the source.
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Citation Information

Cited By

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